to-220-3l plastic-encapsulate transistorstip120,tip121,tip122 cob v cb=10v, i e=0,f=0.1mhz 300 200...
TRANSCRIPT
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
TIP120,121,122 Darlington TRANSISTOR (NPN)
TIP125,126,127 Darlington TRANSISTOR (PNP)
FEATURES
Medium Power Complementary Silicon Transistors
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter TIP120
TIP125
TIP121
TIP126
TIP122
TIP127
Unit
VCBO Collector-Base Voltage 60 80 100 V
VCEO Collector-Emitter Voltage 60 80 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 5 A
PC Collector Power Dissipation 2 W
RθJA Thermal Resistance Junction to Ambient 62.5 ℃/W
RθJc Thermal Resistance Junction to Case 1.92 ℃/W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55to+150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage TIP120,TIP125
TIP121,TIP126 TIP122,TIP127
V(BR)CBO IC= 1mA,IE=0 60 80
100 V
Collector-emitter breakdown voltage TIP120,TIP125 TIP121,TIP126 TIP122,TIP127
VCEO(SUS) IC= 30mA,IB=0 60 80
100 V
Collector cut-off current TIP120,TIP125 TIP121,TIP126 TIP122,TIP127
ICBO VCB= 60 V, IE=0 VCB= 80 V, IE=0 VCB= 100V, IE=0
0.2 mA
Collector cut-off current TIP120,TIP125 TIP121,TIP126 TIP122,TIP127
ICEO VCE=30 V, IB=0 VCE=40 V, IB=0 VCE=50 V, IB=0
0.5 mA
Emitter cut-off current IEBO VEB=5 V, IC=0 2 mA
hFE(1) VCE= 3V, IC=0.5A 1000 DC current gain
hFE(2) VCE= 3V, IC=3 A 1000
Collector-emitter saturation voltage VCE(sat) IC=3A,IB=12mA IC=5 A,IB=20mA
2 4
V
Base-emitter voltage VBE VCE=3V, IC=3 A 2.5 V Output Capacitance TIP125,TIP126,TIP127
TIP120,TIP121,TIP122 Cob VCB=10V, IE=0,f=0.1MHz 300 200
pF
TO-220-3L 1.BASE 2.COLLECTOR 3.EMITTER
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0.1 1 100
50
100
150
200
250
0 200 400 600 800 1000 1200 1400 1600 1800 20000.1
1
10
100
1000
0 25 50 75 100 125 1500
500
1000
1500
2000
2500
100 10000
200
400
600
800
1000
1200
1400
1600
1800
2000
100 100010
100
1000
1 10 100 10001
10
100
1000
10000
100000
0 1 2 3 4 5 60
1
2
3
4
5
6
CAPA
CITA
NCE
C
(p
F)
REVERSE VOLTAGE V (V)
Cob
Cib
f=1MHzIE=0/IC=0Ta=25℃
VCB/ VEBCob/ Cib ——
30
T a=1
00℃
T a=2
5℃
COLL
CETO
R CU
RREN
T
I C (m
A)
BASE-EMMITER VOLTAGE VBE (mV)
IC VBE
COMMON EMITTERVCE=3V
COLL
ECTO
R PO
WER
DIS
SIPA
TIO
N
P
C (m
W)
AMBIENT TEMPERATURE Ta ( )℃
PC —— Ta
50
4000
3000
50005000
8000
——
BASE
-EM
ITTE
R SA
TURA
TIO
NVO
LTAG
E
V BEsa
t (m
V)
COLLECTOR CURRENT IC (mA)
β=250
Ta=100℃
Ta=25℃
ICVBEsat ——
50
COLL
ECTO
R-EM
ITTE
R SA
TURA
TIO
NVO
LTAG
E
V CEsa
t (m
V)
COLLECTOR CURRENT IC (mA)
ICVCEsat ——
Ta=100℃
Ta=25℃
β=250
DC C
URRE
NT G
AIN
h FE
COLLECTOR CURRENT IC (mA)
COMMON EMITTERVCE=3V
Ta=25℃
Ta=100℃
IChFE ——
Typical Characterisitics TIP122
1mA 0.9mA 0.8mA 0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
IB=0.2mACOLL
ECTO
R CU
RREN
T
I C (A
)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COMMONEMITTERTa=25℃
Static Characteristic
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Typical Characteristics
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TO-220-3L Package Outline Dimensions
Min Max Min MaxA 4.470 4.670 0.176 0.184
A1 2.520 2.820 0.099 0.111b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054c 0.310 0.530 0.012 0.021c1 1.170 1.370 0.046 0.054D 10.010 10.310 0.394 0.406E 8.500 8.900 0.335 0.350
E1 12.060 12.460 0.475 0.491e
e1 4.980 5.180 0.196 0.204F 2.590 2.890 0.102 0.114h 0.000 0.300 0.000 0.012L 13.400 13.800 0.528 0.543
L1 3.560 3.960 0.140 0.156Φ 3.735 3.935 0.147 0.155
Symbol Dimensions In Millimeters Dimensions In Inches
0.100 TYP2.540 TYP