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© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 1
Rochester Institute of Technology
Microelectronic Engineering
ROCHESTER INSTITUTE OF TECHNOLOGYMICROELECTRONIC ENGINEERING
Surface MEMS Design Project
Dr. Lynn Fuller, Adam WardasWebpage: http://people.rit.edu/lffeee
Microelectronic EngineeringRochester Institute of Technology
82 Lomb Memorial DriveRochester, NY 14623-5604
Tel (585) 475-2035Email: Lynn.Fuller@rit.edu
Department webpage: http://www.microe.rit.edu
10-16-2016 SurfaceMEMsDesign.ppt
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 2
Rochester Institute of Technology
Microelectronic Engineering
OUTLINE
IntroductionList of Possible MEMS DevicesKey EquationsDevice Cross SectionMEMS Switch ExampleMEMS Mirror ExampleDesign RulesPackagingMentor Graphics InstructionsMaskmakingStepper JobsFabrication DetailsSignal Processing Testing
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 3
Rochester Institute of Technology
Microelectronic Engineering
INTRODUCTION
This document provides detailed information on RIT’s surface micromachine process. This process is capable of making many different types of MEMS devices. This MEMS fabrication process is CMOS compatible (with some modifications) back end module that can be added to realize compact microsystems (CMOS plus MEMS).
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 4
Rochester Institute of Technology
Microelectronic Engineering
LIST OF MEMS DEVICES MADE WITH THIS PROCESS
Resistors – Micro BolometerHeaters – Chemical SensorsMicro Mirror - Two Axis MirrorThermally Actuated Two Arm CantileverChevron ActuatorsElectrostatic Comb DriveMEMS SwitchAccelerometerGas Flow Sensor, Anemometer, ThermionicLight ModulatorBio ProbesSpeakerHumidity SensorsPressure Sensors - MicrophoneTemperature Sensors – Thermopile, ResistorInductors, Capacitors – Humidity SensorHall Effect Sensors – other Magnetic Field Sensors
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 5
Rochester Institute of Technology
Microelectronic Engineering
POSSIBLE NEW DEVICE – PROCESS MODIFICATIONS
Etch grooves in wafer to eliminate wafer sawing.
Nickel Metal for magnetic devices, instead of Aluminum?
Solder Bumps
Coils for Inductors
Tubes
Closed diaphragms for static pressure sensors
Spin Coat Polyimide to fill holes
Deposit or grow oxide to fill holes
Bimetallic actuators
Latching Chevron Actuators
Gears, Wheels, Rotary Structures
Folding Mirrors and Structures
Different Drop Cast Materials
Valves and Pumps
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 6
Rochester Institute of Technology
Microelectronic Engineering
POSSIBLE NEW DEVICE – PROCESS MODIFICATIONS
Two Axis Accelerometer
Three Axis Accelerometer
Gyroscope
Diffraction Grating
Optical Modulator
Microbolometer Array
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 7
Rochester Institute of Technology
Microelectronic Engineering
DEVICE CROSS SECTION
Starting Wafer
Field
Oxide
Bottom Poly
Mechanical Poly Layer Metal
Bottom Poly 1 (Red) Layer 1Sacrificial Oxide (Blue Outline) Layer 2Anchor (Green) Layer 3Mechanical Poly 2 (Purple) Layer 4Contact Cut (White) Layer 6Metal (Blue) Layer 7Outline (Yellow Outline) Layer 9No Implant Yellow Layer 15Holes Layer 16 (combined with Poly 2)Release
Sacrificial Oxide
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 8
Rochester Institute of Technology
Microelectronic Engineering
KEY EQUATIONS
Cantilever Deflection - YmaxF = force at end of cantileverE = Youngs Modulusb = beam widthL = beam Lengthh = beam thickness
Stress for Cantilevers = stress at anchor
Electrostatic Force - Feo = 8.85e-14 V/cmer = relative permitivittyd = distance between platesV = voltsA = area of plates
Capacitance - C
Ymax 3 E bh3
F =12L3
12 F Lsx=0 =
2b h2
2d2
o r AV2F =
d
o r AC =
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 9
Rochester Institute of Technology
Microelectronic Engineering
KEY EQUATIONS
Force due to Accelerationm = massa = accelerationd = densityV = volume
Resistance - RRhos = Sheet ResistanceL = LengthW = Widthq = 1.6E-19u = mobility
m a = d V aF =
Rhos L/W
Rhos=1/(qu Dose)
R =
For single crystal silicon
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 10
Rochester Institute of Technology
Microelectronic Engineering
CALCULATIONS
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 11
Rochester Institute of Technology
Microelectronic Engineering
MENTOR GRAPHICS LAYOUT OF CANTILEVER
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 12
Rochester Institute of Technology
Microelectronic Engineering
SWITCH CALCULATIONS PLUS DIMENSIONS
Each project has 5mm x 5mm layout space
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 13
Rochester Institute of Technology
Microelectronic Engineering
SWITCH LAYOUT
Bottom Poly
Sacrificial Oxide
Anchor Cuts
Mechanical Poly
CC
Metal
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 14
Rochester Institute of Technology
Microelectronic Engineering
MEMS MULTICHIP PROJECT TEMPLATE
5mm by 5mmdesign spacefor each project
Total 15 mm by 15 mm plus 500 um for sawing into 9 chips for overall 16.5mm by 16.5mm size.
Wafer sawing is easier if all chips are the same size
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 15
Rochester Institute of Technology
Microelectronic Engineering
TEST STRUCTURES
One of the cells will have test structures along the bottom edge for resolution/overlay, etc.
Lithographic overlay and resolution test structure
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 16
Rochester Institute of Technology
Microelectronic Engineering
TEST STRUCTURES
Test structures:
Maximum Poly2 simple cantilever width over SacOx that releases with no etch holes.
Minimum etch hole size that works. 1x1um 2x2um 3x3um 4x4umCrossover using SacOxCrossover no SacOxResistance of No_Implant Poly2 Resistor L=2WResistance of Poly2 Resistor L=2W no holesResistance of Poly2 Resistor with holes L=2WResistance of Poly1 Resistor L=2WContacts to Poly2Contacts to Poly1Contact between Poly1 and Poly2Substrate connection metal/anchor/cut to Substrate
More
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 17
Rochester Institute of Technology
Microelectronic Engineering
LAYOUT RULES
Perfect Overlay Slight Overlay
Not Fatal
Misalignment
Fatal
Layout rules prevent slight misalignment from being fatal. Also, rules help make device performance consistent (minimum width for resistor will make values more consistent)
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 18
Rochester Institute of Technology
Microelectronic Engineering
DESIGN RULES (GUIDELINES)
1. Outline is used to define the 5mm x 5mm work space.
2. Minimum metal pad size for probing and wirebond connections is 150 µm by 150 µm, bigger may be better except for capacitor sensor connections. Pads should be placed around the perimeter of the 5mm x 5mm workspace if possible.
3. Use Poly1 Layer for PG Text lettering.
4. If mechanical Poly2 has sacrifical oxide under it and you plan to remove the sacrifical oxide then 4um by 4um etch holes on a 10um grid (offset) need to be included. Draw the holes on separate layer. We will combine with mechanical Poly2 at maskmaking.
5. Smallest gap in Poly2 is 1 or 2um (2um gap works, 1um works sometimes)
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 19
Rochester Institute of Technology
Microelectronic Engineering
DESIGN RULES (GUIDELINES)
6. Electrical connections to Poly1 could be Metal over Cut over Poly2 over Anchor over Poly 1. (Poly 2 must be bigger than Anchor)
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 20
Rochester Institute of Technology
Microelectronic Engineering
DESIGN RULES (GUIDELINES)
7. Electrical connections to Poly2 could be Metal over Cut over Poly 2.
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
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Rochester Institute of Technology
Microelectronic Engineering
8. Poly2 should be anchored to Poly1 through Anchor which also electrically connects Poly2 to Poly1. Poly 1 should extend beyond Anchor by 10um or more. Poly 2 should extend beyond anchor by 10um.
DESIGN RULES (GUIDELINES)
9. Electrical contacts to Poly2 could be metal over Cut over Anchor to Poly1 which is indirectly connected to Poly2 through another anchor. Although this way to connect has more resistance it is okay for low (zero) current use. It does allow for cross overs.
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 22
Rochester Institute of Technology
Microelectronic Engineering
10. Poly2 can cross over Poly1 with no electrical connection with SacOx between the two poly conductors.Should also work with no SacOx.
DESIGN RULES (GUIDELINES)
12. Electrical contacts to Poly2 should be metal through Cut. Metal should extend beyond Cut by 10um or more, Poly2 should extend beyond metal by 10 um if there is no SacOx or 20um if there is Sac Ox.
11. Minimum Poly2 that is not released is 2um. Minimum Poly 2 that is released is 10um.
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 23
Rochester Institute of Technology
Microelectronic Engineering
DESIGN RULES (GUIDELINES)
13. Best not to make electrical contacts to Poly2 where Poly2 is over SacOx and Poly2 has holes. (might be necessary for some devices)
15. Metal can not survive the release etch (until we move to gold) so metal should not extend on Poly2 where holes exist for SacOx etch Inside of a Release box.
Release box
14. Release box extends beyond Poly2 (where etch holes exist) by 10u.
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 24
Rochester Institute of Technology
Microelectronic Engineering
SOME EXAMPLES OF DEVICES
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
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Rochester Institute of Technology
Microelectronic Engineering
2014 MEMS MULTICHIP PROJECT DESIGN
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 26
Rochester Institute of Technology
Microelectronic Engineering
2015 MEMS MULTICHIP PROJECT DESIGN
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 27
Rochester Institute of Technology
Microelectronic Engineering
MEMS 2016 LAYOUT
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 28
Rochester Institute of Technology
Microelectronic Engineering
VLSI DESIGN LAB
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 29
Rochester Institute of Technology
Microelectronic Engineering
USING THE VLSI LAB WORKSTATIONS AND MENTOR GRAPHICS CAD TOOLS
Usually the workstation screen will be blank, press any key to view a login window. Login or switch user and then login.
Login: username (RIT computer account) Password: ********
The screen background will change and your desktop will appear. On the top of the screen click on Applications then System Tools then Terminal. A window will appear that has a Unix prompt inside.
Type module load mentor <ENTER>
Type ic <ENTER>, it will take a few seconds, then the Pyxis Layout user interface will appear. Maximize the Pyxis Layout window.
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 30
Rochester Institute of Technology
Microelectronic Engineering
PYXIS WORKSPACE
It is convenient to show the Layer Palette and Session banners on the right side of the workspace. If they are not visible go to Setup > Windows> and check Layer Palette and Session. You should also check Command Shell, Message Area and Status Line.
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 31
Rochester Institute of Technology
Microelectronic Engineering
USING THE HP WORKSTATIONS AND MENTOR GRAPHICS CAD TOOLS - PROCESS AND GRID
In the session menu palette on the right hand side of the screen, under Layout, select New, using the left mouse button. (also under file on top banner) For cell name type name-device. Set the process by typing /tools/ritpub/process/mems-2014 in the process field (or browse to mems-2014). Leave the Rules field blank. Click OK
At the top left of the window check that the process is mems-2014 not Default. If not correct go to top banner click on Context>Process>Set Process
The Layer Palette should now show the layers you expect to used for your device layout.
On top banner select Setup>Preferences>Display>Rulers/Grid Set Snap to 10 and 10 as shown. (or other values as necessary)
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 32
Rochester Institute of Technology
Microelectronic Engineering
USING THE HP WORKSTATIONS AND MENTOR GRAPHICS CAD TOOLS – WORKSPACE, LOCATION
The plus mark + is
(0,0) the small dots
are the 10 um grid the
large dots are the
100um grid. The
mouse curser is
shown by the
diamond and is at
(100um,100um) as
indicated by the
cursor position at the
top of the workspace.
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 33
Rochester Institute of Technology
Microelectronic Engineering
USING THE HP WORKSTATIONS AND MENTOR GRAPHICS CAD TOOLS – SELECTING OBJECTS
Select easy edit, Select Shape. Draw boxes by click and drag of mouse. Unselect by pressing
F2 function key. The highlighted layer in the layer palette is selected prior to drawing.
Unselect by pressing F2. Exit drawing by pressing ESC.
Selecting multiple objects is defined in
Setup>Selection
Unclick Surrounding the select
rectangle to not select the cell outline
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 34
Rochester Institute of Technology
Microelectronic Engineering
DRAWING BOXES AND OTHER SHAPES
Select easy edit, right click and select Show Scroll Bars, scroll through the various edit
commands.
DRAW BOXES by click and drag of mouse. Unselect by pressing F2 function key. The
following command will draw a 3000 µm by 3000 µm box with layer 4 color/shading. Put
the curser in the workspace and start typing. A text line window will pop up. If the
command has a typo just start typing again and use the up arrow to recall previous text.
$add_shape([[0,0],[3000,3000]],4)
The Notch command is useful to change the size of a selected box or alter rectangular
shapes into more complex shapes.
Location of lower
left corner
Location of upper
right cornerBox Color
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 35
Rochester Institute of Technology
Microelectronic Engineering
DRAWING CIRCLES
DRAW CIRCLES by typing $set_location_mode(@arc) return. The following command will draw a 100µm radius circle centered at (0,0) using 300 straight line segments.$add_shape($get_circle([0,0],[100,0],300),3)
To reset to rectangles type $set_location_mode(@line) return.
MOVE, COPY, DELETE, NOTCH, etc: Selected objects will appear to have a bright outline. Selected objects can be moved (Move), copied (Copy), deleted (Del), notched (Notc). When done unselect objects, press F2.
Change an Object to another layer: Selected object(s) click on Edit on the top banner, select Change Attributes, change layer name to the name you want. When done press F2to unselect
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 36
Rochester Institute of Technology
Microelectronic Engineering
USING THE HP WORKSTATIONS AND MENTOR GRAPHICS CAD TOOLS - OTHER
ZOOM IN OUT: pressing the + or - sign on right key pad will zoom in or out. Also pressing shift + F8 will zoom so that all objects are in the view area. Select View then Area and click and drag a rectangle will zoom so that the objects in the rectangle are in the view area.
MOVING VIEW CENTER: pressing the middle mouse button will center the view around the pointer.
ADDING TEXT: Add > Polygon Text click on layout where you want it located. Select the text box and Edit > Change > Attributes, change pgtext, change scale to 3.0
SCREEN PRINT: Click on MGC and select Capture Screen. Enter file name and location such as Lynn.png and Desktop. After saving you can use a flash drive and transfer the file.
EXIT: Close all tabs save changes. MGC Exit.
SESSION LOCKED: If you do not save and exit correctly your design will be locked so you do not loose changes. To recover close ic pyxis and other Mentor tools. In a terminal type cd to list directory of files. Lock files end with .lck they can be removed with commandrm *.lck If you have a hierarchical design you need to remove all .lck files from the various directories find . –r *.lck
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 37
Rochester Institute of Technology
Microelectronic Engineering
EXPORT CELL DESIGN AS GDS II FILE
Export as filename.gds
Email to Dr. Fuller
lffeee@rit.edu
Cell layout name
Save to your desktop
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 38
Rochester Institute of Technology
Microelectronic Engineering
GDS II LAYER NUMBERS
The design layer names and colors are lost when converting to GDS II. Only the layer number is kept.
Individual Student Designs are converted to GDS-II files and emailed to course instructor.
Layer
Number
1
2
3
4
7
9
6
15
16
10
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 39
Rochester Institute of Technology
Microelectronic Engineering
MEMS 2016 LAYOUT
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 40
Rochester Institute of Technology
Microelectronic Engineering
MEMS 2016 LAYOUT
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 41
Rochester Institute of Technology
Microelectronic Engineering
MASK ORDER FORM
x
770MEMS2016.gds 27MB816.5mm x 16.5mmMEMS_Template_2016
Dr FullerRIT
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
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Rochester Institute of Technology
Microelectronic Engineering
MASK ORDER FORM DETAILS
Reticle
Number
Reticle
Name
Design
Layer #’s
Boolean Function Dark/
Clear
Comment
1 Poly1 1 None Clear
2 Anchor 3 3 Inverted Dark
3 SacOx 2 None Clear
4 Poly2 4,16 4 AND (16 Inverted) Clear
5 No Implant 15 None Clear
6 Cut 6 6 Inverted Dark
7 Metal 7 None Clear
8 Release 10 Inverted Dark
Design Layer 9 Out (outline) is not used. It is only for placement of projects on the multi-project reticle template.
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
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Rochester Institute of Technology
Microelectronic Engineering
RETICLE 1 – DESIGN LAYER 1 - POLY 1
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
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Rochester Institute of Technology
Microelectronic Engineering
RETICLE 2 - LAYER 3 (INVERTED) - ANCHOR
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 45
Rochester Institute of Technology
Microelectronic Engineering
RETICLE 3 – DESIGN LAYER 2 – SAC OX
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 46
Rochester Institute of Technology
Microelectronic Engineering
RETICLE 4 – LAYER 4 + LAYER 16 (INV) - POLY2 + HOLES
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 47
Rochester Institute of Technology
Microelectronic Engineering
LAYER 16 - HOLES (COMBINED WITH POLY2)
INVERT HOLES (LAYER 16) THEN
AND WITH POLY2 (LAYER 4) TO
MAKE HOLES IN POLY2
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 48
Rochester Institute of Technology
Microelectronic Engineering
RETICLE 5 – DESIGN LAYER 15 – NO IMPLANT
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
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Rochester Institute of Technology
Microelectronic Engineering
RETICLE 6 - LAYER 6 (INVERTED) - CUT
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
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Rochester Institute of Technology
Microelectronic Engineering
RETICLE 7 – DESIGN LAYER 7 - METAL
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
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Rochester Institute of Technology
Microelectronic Engineering
RETICLE 8 – LAYER 10 (INVERTED) - RELEASE
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
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Rochester Institute of Technology
Microelectronic Engineering
ALL LEVELS AND LAYERS
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
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Rochester Institute of Technology
Microelectronic Engineering
MASK PROCESS FLOW
GDSII CATS
Computer Aided
Transcription Software
MEBES
FileMEBES
Job
Coat
PlateExposeInspectEtch Cr
Inspect
Develop
Clean
IC Graph by Mentor
Graphics
CAD
Data Prep
Ship out
Maskmaking
This process can take weeks and cost between $1000 and
$20,000 for each mask depending on the design complexity.
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 54
Rochester Institute of Technology
Microelectronic Engineering
MEBES - Manufacturing Electron Beam Exposure System
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 55
Rochester Institute of Technology
Microelectronic Engineering
CLEAR FIELD RETICLE FOR ASML
Poly One Non-Chrome Side Metal Chrome Side
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
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Rochester Institute of Technology
Microelectronic Engineering
ASML 5500/200
NA = 0.48 to 0.60 variables= 0.35 to 0.85 variable
With Variable Kohler, orVariable Annular illuminationResolution = K1 l/NA
= ~ 0.35µm for NA=0.6, s =0.85
Depth of Focus = k2 l/(NA)2
= > 1.0 µm for NA = 0.6i-Line Stepper l = 365 nm
22 x 27 mm Field Size
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 57
Rochester Institute of Technology
Microelectronic Engineering
STEPPER JOB
Mask Barcode:
Stepper Jobname: MCEE770-MEMSLevel 0 (combi reticle)Level Clearout (combi reticle)
Level SacOx Level Poly 1Level AnchorLevel Poly 2Level CCLevel MetalLevel No ImplantLevel Release
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
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Rochester Institute of Technology
Microelectronic Engineering
RECIPES FOR RESIST COAT AND DEVELOP
Level Level
Name
Resist Coat Recipe Develop
Recipe
Resist
Thicknes
s
0 Zero OIR-620 Coat Develop 1.0um
1 Poly 1 OIR-620 Coat Develop 1.0um
2 Sac Ox OIR-620 Coat Develop 1.0um
3 Anchor S1827 MEMS-COAT MEMS-DEV 4.5um
4 Poly 2 S1827 MEMS-COAT MEMS-DEV 4.5um
5 CC S1827 MEMS-COAT MEMS-DEV 4.5um
6 Metal 1 S1827 MEMS-COAT MEMS-DEV 4.5um
7 Release S1827 MEMS-COAT MEMS-REL 4.5um
MEMS-COAT.rcp 2500rpm, 1min Hand Dispense
Exposure for S1827, 375mj/cm2, NA=0.46, s=0.45
MEMS-DEV.rcp has 200 second develop time, no hardbake
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 59
Rochester Institute of Technology
Microelectronic Engineering
SURFACE MEMS 2015 PROCESS
1. Starting wafer2. PH03 – level 0, Marks3. ET29 – Zero Etch4. ID01-Scribe Wafer ID, D1…5. ET07 – Resist Strip, Recipe FF6. CL01 – RCA clean7. OX04 – 6500Å Oxide Tube 18. CV01 – LPCVD Poly 5000Å9. IM01 – Implant P31, 2E16, 60KeV10. PH03 – level 1 Poly-111. ET08 – Poly Etch12. ET07 – Resist Strip, Recipe FF13. CL01- RCA Clean 14. CV03 – OX05 700Å Dry Oxide15. CV02- LPCVD Nitride 4000Å16. PH03 – level 2 Anchor17. ET29 – Etch Nitride18. ET07 - Resist Strip, Recipe FF19. CL01 – RCA Clean20. CV03-TEOS SacOx Dep 1.75um
21. PH03 – level 3 SacOx Define22. ET06 - wet etch SacOx Define Etch23. ET07- Resist Strip, Recipe FF24. CL01 – RCA Clean25. CV01-LPCVD Poly 2um, 140 min26. PH03 - level 4 No Implant27. IM01-P31 2E16 100KeV28. ET07 Resist Strip, Recipe FF29. OX04-Anneal Recipe 11930. DE01 Four Point Probe31. PH03 - level 5 Poly232. ET68 - STS Etch33. ET07 - Resist Strip, Recipe FF34. CV02 – LPCVD Nitride 4000Å35. PH03 – level 6 Contact Cut36. ET29 – Etch Contact Cut37. ET06 – Etch Oxide38. ET07 – Resist Strip, Recipe FF39. CL01 – RCA Clean40. ME01 – Metal Deposition - Al
41. PH03 – level 7 Metal42. ET55 – Metal Etch - wet43. ET07 – Resist Strip44. PH03 – level 8 – Final SacOx45. ET66 – Final SacOx Etch46. ET07 - Resist Strip, Recipe FF47. SEM1 – Pictures48. TE01 - Testing
9-1-15
Etch rates
LPCVD Si3N4 in 5:1 BHF 120Å/min
N+Poly in BHF 50Å/min
PECVD SiO2 in 5:1 BHF 2000Å/min
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
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Rochester Institute of Technology
Microelectronic Engineering
SURFACE MEMS 2015 PROCESS
21. PH03 – level 3 SacOx Define22. ET06 - wet etch SacOx Define Etch23. ET07- Resist Strip, Recipe FF24. CL01 – RCA Clean25. CV01-LPCVD Poly 2um, 140 min26. PH03 - level 4 No Implant27. IM01-P31 2E16 100KeV28. ET07 Resist Strip, Recipe FF29. CL01 – RCA Clean30. OX05- 500Å pad oxide31. CV02 – 2000Å nitride32. PH03 - level 5 Poly233. ET29 – Plasma Etch Nitride34. ET06 – Wet Etch pad oxide35. ET68 - STS Etch Poly236. ET07 - Resist Strip, Recipe FF37. PH03 – level 6 Contact Cut38. ET29 – Etch Nitride Contact Cut39. ET06 – Etch Oxide Contact Cut40. ET07 – Resist Strip, Recipe FF
41. 39. CL01 – RCA Clean two HF 42. ME01 – Metal Deposition - Al43. PH03 – level 7 Metal44. ET55 – Metal Etch - wet45. ET07 – Resist Strip46. PH03 – level 8 – Release47. SA01 – Saw wafers ½ Thru48. Special Soap Clean49. ET66 – Final SacOx Etch50. ET07 - Resist Strip with Acetone51. Rinse and Dry w Isopropyl Pull52. TE01 – wafer level testing53. SEM1 – Pictures54. Packaging and Testing
2-22-16
1. Starting wafer2. PH03 – level 0, Marks3. ET29 – Zero Etch4. ID01-Scribe Wafer ID, D1…5. ET07 – Resist Strip, Recipe FF6. CL01 – RCA clean7. OX04 – 6500Å Oxide Tube 18. CV01 – LPCVD Poly 5000Å9. IM01 – Implant P31, 2E16, 60KeV10. PH03 – level 1 Poly-111. ET08 – Poly Etch12. ET07 – Resist Strip, Recipe FF13. CL01- RCA Clean 14. OX05 – 700Å Dry Oxide15. CV02- LPCVD Nitride 4000Å16. PH03 – level 2 Anchor17. ET29 – Etch Nitride18. ET07 - Resist Strip, Recipe FF19. CL01 – RCA Clean20. CV03-TEOS SacOx Dep 1.75um
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 61
Rochester Institute of Technology
Microelectronic Engineering
FABRICATION PROCESS
Starting Wafer with Electronics
5000Å Poly n-Type
Sac Oxide from TEOS 1.7µm
6500Å Field OxideLPCVD Nitride and Pad Ox
Wet Etch Stop for Sac Ox
Poly One Photo
Etched Poly Bottom Electrode
1.
2.
4.
3.
5.
6.
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
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Rochester Institute of Technology
Microelectronic Engineering
FABRICATION PROCESS
1.7µm Mechanical No Implant
Masking, then implant n+ PolyPhoto for SacOx Define
Wet Etch TEOS Sacrificial Oxide
Photo Anchor Holes
Plasma Etch Anchor Holes
7. 9.
8. 10.
Etch Poly STS Etcher
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 63
Rochester Institute of Technology
Microelectronic Engineering
FABRICATION PROCESS
CC Photo
Etch Contact CutsPhoto Release
Etch SacOx
LPCVD Nitride Deposit Metal
Photo and Etch Metal
11. 13.
12.
14.
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
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Rochester Institute of Technology
Microelectronic Engineering
FABRICATION PROCESS
Final Cross Section
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 65
Rochester Institute of Technology
Microelectronic Engineering
CANTILEVER, MIRROR OR ACCELEROMETER
Electrostatic ActuationCapacitor SensorResistor SensorAccelerometer or Mirror
R
CYmaxm
V+
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 66
Rochester Institute of Technology
Microelectronic Engineering
MENTOR GRAPHICS LAYOUT OF CANTILEVER
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 67
Rochester Institute of Technology
Microelectronic Engineering
THERMALLY ACTUATED SPEAKER
Starting Wafer
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 68
Rochester Institute of Technology
Microelectronic Engineering
THERMALLY ACTUATED SPEAKER
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 69
Rochester Institute of Technology
Microelectronic Engineering
THERMALLY ACTUATED SPEAKER
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 70
Rochester Institute of Technology
Microelectronic Engineering
MICROPHONE
Fixed bottom plate
with holes
Top plate diaphragmOutput
Capacitance
Sound Pressure
Starting Wafer
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 71
Rochester Institute of Technology
Microelectronic Engineering
MICROPHONE
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 72
Rochester Institute of Technology
Microelectronic Engineering
CHEMICAL SENSOR OR HUMIDITY SENSOR
Interdigitated fingers form electrodes
for either resistive or capacitive
sensors. For capacitive sensors the
fingers are closely spaced. The
chemically sensitive coating is
resistive and the resistance changes in
the presence of some chemical to be
sensed or the coating is not conductive
but the dielectric constant changes in
the presence of some chemical to be
sensed.DC or DR
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 73
Rochester Institute of Technology
Microelectronic Engineering
CHEMICAL SENSOR OR HUMIDITY SENSOR
1µm gap490µm length82 fingers500µm Heater L460µm Heater W
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 74
Rochester Institute of Technology
Microelectronic Engineering
MIRROR
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 75
Rochester Institute of Technology
Microelectronic Engineering
MIRROR
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 76
Rochester Institute of Technology
Microelectronic Engineering
MIRRORS
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 77
Rochester Institute of Technology
Microelectronic Engineering
RESISTOR - BOLOMETER
Resistor is suspended in air.
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 78
Rochester Institute of Technology
Microelectronic Engineering
THERMAL FLOW SENSORS
SacOx
Silicon Substrate
Si3N4
PolysiliconAluminum
Spring 2003
EMCR 890 Class Project
Dr. Lynn Fuller
Flow
Downstream
Temp Sensor
Heater
Upstream
Temp Sensor
gas
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 79
Rochester Institute of Technology
Microelectronic Engineering
GAS FLOW SENSOR
Overall Size 5000um x 1400um
Heater 700um x 200um
Sensors 700um x 50um
gas
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 80
Rochester Institute of Technology
Microelectronic Engineering
HEATERS AND TEMPERATURE SENSORS
SacOx
Oxide
PolysiliconAluminum
Resistor HeaterThermocouple SensorResistor Sensor
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 81
Rochester Institute of Technology
Microelectronic Engineering
SEEBECK EFFECT
When two dissimilar conductors are connected together a voltage may be generated if the junction is at a temperature different from the temperature at the other end of the conductors (cold junction) This is the principal behind the thermocouple and is called the Seebeck effect.
DV
Material 2Material 1
Hot
Cold
Nadim Maluf, Kirt Williams, An Introduction to
Microelectromechanical Systems Engineering, 2nd Ed. 2004
DV = a1(Tcold-Thot) + a2 (Thot-Tcold)=(a1-a2)(Thot-Tcold)
Where a1 and a2 are the Seebeck coefficients for materials 1 and 2
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 82
Rochester Institute of Technology
Microelectronic Engineering
HEATER AND TEMPERATURE SENSORS
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 83
Rochester Institute of Technology
Microelectronic Engineering
MEMS SWITCH
Electrostatic actuation (V) pulls down contactor to make connection along the signal line.
V
Signal LineSignal Line
Signal Line Signal Line
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 84
Rochester Institute of Technology
Microelectronic Engineering
SWITCH CALCULATIONS PLUS DIMENSIONS
Each project has 5mm x 5mm layout space
Artur
Nigmatulin
2011
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 85
Rochester Institute of Technology
Microelectronic Engineering
AC MEMS SWITCH
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 86
Rochester Institute of Technology
Microelectronic Engineering
AC MEMS SWITCH
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 87
Rochester Institute of Technology
Microelectronic Engineering
CHEVRON ACTUATOR
1000um10° Angle
Thermal Expansion for Si is 2.33E-6/°C
Current flow causes heating and movement
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 88
Rochester Institute of Technology
Microelectronic Engineering
CHEVRON ACTUATOR
1000um10° Angle
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 89
Rochester Institute of Technology
Microelectronic Engineering
POLYSILICON THERMAL ACTUATORS
No current flow Current flow
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 90
Rochester Institute of Technology
Microelectronic Engineering
TWO ARM THERMAL ACTUATOR
Dots on 100µm
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 91
Rochester Institute of Technology
Microelectronic Engineering
MICRO GRIPPER
2000µm
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 92
Rochester Institute of Technology
Microelectronic Engineering
MICRO GRIPPER
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 93
Rochester Institute of Technology
Microelectronic Engineering
MEMS CLASS PROJECT FALL 2015
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 94
Rochester Institute of Technology
Microelectronic Engineering
SINGLE RESISTOR SENSOR AMPLIFIER DESIGN
-V
-
+
+V
-V
R1
R4
Vout
-
+
+V
-V
+V
267
0.00004%/°C with gain of 1000 and 100C
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 95
Rochester Institute of Technology
Microelectronic Engineering
SINGLE SUPPLY OSCILLATOR (MULTIVIBRATOR)
-
+Vo
C
+V
R2R1
R
VT
+VR3
Vo
t
t1
+V
0
Let R1 = 100K, R2=R3=100K
and +V = 3.3
Then VT = 2.2 when Vo = 3.3
VT = 1.1 when Vo = 0
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 96
Rochester Institute of Technology
Microelectronic Engineering
UNIVERSAL PUMP & FLOW SENSOR ASSEMBLY
1” by 3” PCB 0.0125” thick with 0.005”copper
Pin strip header
Hose nipples
Plastic cover
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 97
Rochester Institute of Technology
Microelectronic Engineering
CROSSECTION
Pin strip header
Hose nipples
ThermosettingGlue on Plastic cover
1” by 3” PCB 0.0125” thick with 0.005”copper
MEMS chip mounted flush with PCB surface, wire bonds from MEMS chip to copper traces
Photoresist (film) channel wallsThickness 50µm to 150µm
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 98
Rochester Institute of Technology
Microelectronic Engineering
AFTER WIRE BONDS, HEADER AND NIPPLES
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 99
Rochester Institute of Technology
Microelectronic Engineering
SUMMARY
This project allows students to see the entire process for design, fabrication, packaging and testing of a MEMS based Microsystem.
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 100
Rochester Institute of Technology
Microelectronic Engineering
REFERENCES
1. Dr. Lynn Fuller’s webpage2. more
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 101
Rochester Institute of Technology
Microelectronic Engineering
HOMEWORK – PROJECT OVERVIEW
1. Where do design rules come from? What are they for?
2. Why do all individual student designs have to use the same
layout layer number for multichip project designs.
3. What are reticles, what are they used for, and how are they
made?
4. What does clear field and dark field mask mean? What
determines if the reticle should be clear field or dark field?
5. How much does a reticle cost?
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 102
Rochester Institute of Technology
Microelectronic Engineering
HOMEWORK – DESIGN AND LAYOUT
1. Design And Layout a simple cantilever as shown on the following pages.
2. Use the process /tools/ritpub/process/mems-20143. Start by drawing an5000um x
5000um outline with lower left corner at (0,0)
4. Setup>Preferences>Selection only check boxes inside the selection rectangle and Intersecting the selection rectangle.
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 103
Rochester Institute of Technology
Microelectronic Engineering
HOMEWORK – DESIGN AND LAYOUT
5. Draw the simple cantilever similar to that shown in the
pictures below.
6. Calculate the force needed to bend the cantilever down by 2um
7. Calculate the electrostatic force created by 10 volts
8. Describe how the resistor sensor works
9. Describe how the capacitor sensor works
10. Print out your final layout.
11. Export the GDS-II file and email to your instructor. Name
your files with yourname_cantilever.gds if you send screen
captures name it yourname_assignment.png (or .jpg, etc.)
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 104
Rochester Institute of Technology
Microelectronic Engineering
MENTOR GRAPHICS LAYOUT OF CANTILEVER
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 105
Rochester Institute of Technology
Microelectronic Engineering
MENTOR GRAPHICS LAYOUT OF CANTILEVER
10
00
µm
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 106
Rochester Institute of Technology
Microelectronic Engineering
MENTOR GRAPHICS LAYOUT OF CANTILEVER
© October 16, 2016 Dr. Lynn Fuller
Surface MEMS Design
Page 107
Rochester Institute of Technology
Microelectronic Engineering
MENTOR GRAPHICS LAYOUT OF CANTILEVER
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