ankur sharma mukul guptaeda.ee.ucla.edu/ee201c/uploads/winter2012/...power measurement • energy...
TRANSCRIPT
Ankur Sharma
Mukul Gupta
Tsi = fin thickness 2h = width Lg = gate length Tox = gate oxide thickness
http://www.tibercad.org/files/u6/finfet_schematic.png
SOI FINFET Bulk MOSFET
Excellent control of short channel effects (eg DIBL)
Poor control of short channel effects
smaller sub-threshold swing higher sub-threshold swing
Design challenges due to discreet widths
Widths can be changed in a continuous manner
Less variation due to lightly doped fin
Higher variation since bulk is doped heavily to reduce Vt
DG FINFET modeled as back to back SOI devices
Body thickness of each SOI device is essentially half of fin thickness
Parameter Min (nm) Typical (nm) Max (nm) Step (nm)
Length 30 45 90 2
Width 40 60 120 2
Oxide Thickness
1 1.5 3 0.1
Fin Thickness
7 8.4 17 0.4
Supply Voltage
0.5 1.0 1.4 0.1
All the parameters were individually varied for three different slew rates 20ps, 100ps and 200ps.
Delay
• a=4 • Delay is measured for G3 • Measured for both input rise and input fall
Power measurement
• Energy supplied by Vdd is measured when the output is transitioning from 0->1 • Cload = 100fF • Dynamic power is the power consumed due to short-circuit current Ipeak and the power consumed by S/D parasitic capacitances • Sub-threshold and gate leakage are measured for both input=0 and input=1 • P(dynamic) = P(Vdd) – rise*CV^2 • P(sub-threshold) = P(ground)*rise + P(vdd)*(1-rise) • P(gate) = (1-rise)*(P(vdd) – P(ground)) + (rise)*P(gate) • Rise=0 implies input is transitioning from 0->1 • Rise=1 implies input is transitioning from 1->0
0.00E+00
1.00E-11
2.00E-11
3.00E-11
4.00E-11
5.00E-11
6.00E-11
0.00E+00 1.00E-08 2.00E-08 3.00E-08 4.00E-08 5.00E-08 6.00E-08 7.00E-08 8.00E-08 9.00E-08 1.00E-07
Dela
y
Length
fall delay
rise delay
Linear (fall delay)
Linear (rise delay)
0.00E+00
5.00E-12
1.00E-11
1.50E-11
2.00E-11
2.50E-11
0.00E+00 2.00E-08 4.00E-08 6.00E-08 8.00E-08 1.00E-07 1.20E-07 1.40E-07
FO4 delay vs width
Delay vs Width
No change in delay for change in width
1.93E-11
1.93E-11
1.94E-11
1.94E-11
1.95E-11
1.95E-11
1.96E-11
1.96E-11
1.97E-11
1.97E-11
1.98E-11
1.98E-11
0.00E+00 2.00E-09 4.00E-09 6.00E-09 8.00E-09 1.00E-08 1.20E-08 1.40E-08 1.60E-08 1.80E-08
FO4 delay vs fin width
FO4 delay vs fin width
No change in delay with fin thickness
1.90E-11
1.95E-11
2.00E-11
2.05E-11
2.10E-11
2.15E-11
2.20E-11
2.25E-11
2.30E-11
2.35E-11
0.00E+00 5.00E-10 1.00E-09 1.50E-09 2.00E-09 2.50E-09 3.00E-09 3.50E-09
Dela
y
Oxide thickness
FO4 delay vs oxide thickness
rise delay
fall delay
0.00E+00
1.00E-11
2.00E-11
3.00E-11
4.00E-11
5.00E-11
6.00E-11
7.00E-11
8.00E-11
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Dela
y (s)
Supply Voltage
delay vs vdd
delay vs vdd
Dynamic power is multiplied by 10^-16
0.00E+00
5.00E+00
1.00E+01
1.50E+01
0.00E+00 2.00E-08 4.00E-08 6.00E-08 8.00E-08 1.00E-07 1.20E-07 1.40E-07
Dynamic power vs width for fall delay
200ps
Poly. (200ps)
76
78
80
82
84
0.00E+00 2.00E-08 4.00E-08 6.00E-08 8.00E-08 1.00E-07 1.20E-07 1.40E-07
Po
wer
* 1
0^
-1
6
Width in m
Dynamic Power vs Width for rise delay
200ps
Linear (200ps)
0
0.5
1
0.00E+00 2.00E-08 4.00E-08 6.00E-08 8.00E-08 1.00E-07
dynamic power for falling output
dynamic power for falling output
5
6
7
8
9
0.00E+00 2.00E-08 4.00E-08 6.00E-08 8.00E-08 1.00E-07
dynamic power for rising output
dynamic power for rising output
0.00E+00
1.00E+00
2.00E+00
3.00E+00
4.00E+00
5.00E+00
6.00E+00
7.00E+00
8.00E+00
9.00E+00
0.00E+00 2.00E-09 4.00E-09 6.00E-09 8.00E-09 1.00E-08 1.20E-08 1.40E-08 1.60E-08 1.80E-08
dynamic power for rising output
dynamic power for falling output
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00E+00 5.00E-10 1.00E-09 1.50E-09 2.00E-09 2.50E-09 3.00E-09 3.50E-09
dynamic power for falling output
dynamic power for falling output
7.5
7.6
7.7
7.8
7.9
8
8.1
0.00E+00 1.00E-09 2.00E-09 3.00E-09 4.00E-09
dyn
am
ic p
ow
er
oxide thickness
dynamic power for rising
output
Linear (dynamic power for
rising output)
0
2
4
6
8
10
12
0 0.5 1 1.5
Dyn
am
ic P
ow
er
(pW
)
Supply Voltage, Vdd
Dynamic power Vs Vdd
Dynamic power Vs Vdd
0.00E+00
5.00E-09
1.00E-08
1.50E-08
2.00E-08
2.50E-08
3.00E-08
3.50E-08
4.00E-08
0.00E+00 2.00E-08 4.00E-08 6.00E-08 8.00E-08 1.00E-07 1.20E-07 1.40E-07
sub-thresold leakage input=1
sub-threshold leakage input=0
0.00E+00
5.00E-08
1.00E-07
1.50E-07
2.00E-07
2.50E-07
0.00E+00 2.00E-08 4.00E-08 6.00E-08 8.00E-08 1.00E-07
sub-threshold leakage input=0
subthreshold leakage input=1
0.00E+00
5.00E-09
1.00E-08
1.50E-08
2.00E-08
2.50E-08
0.00E+00 5.00E-09 1.00E-08 1.50E-08 2.00E-08
sub-threshold leakage input=1
sub-threshold leakage input=0
0.00E+00
5.00E-09
1.00E-08
1.50E-08
2.00E-08
2.50E-08
3.00E-08
3.50E-08
0.00E+00 5.00E-10 1.00E-09 1.50E-09 2.00E-09 2.50E-09 3.00E-09 3.50E-09
sub-threshold leakage input=0
sub-threshold leakage input=1
0.00E+00
5.00E-09
1.00E-08
1.50E-08
2.00E-08
2.50E-08
3.00E-08
3.50E-08
0 0.5 1 1.5
Su
b-th
reshold
leakage p
ow
er
(W)
Supply voltage, Vdd
Sub-threshold Leakage Vs Vdd
Threshold Leakage Vs Vdd
Fin Thickness Length Width Supply Width
Delay* 0.10 2.73 1.00 -1.71 -4.81
Dyn. Power‡ 0.19 0.61 -0.58 9.20 0.24
Leak. Power⋕ -0.14 -22.24 4.09 16.89 4.99
Percent rise in the various metrics with 5% rise in parameter values.
* Averaged over rise and fall values ‡ Calculated for rising output ⋕ Calculated for falling output