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Hybrid Interfacial ETL Engineering using PCBM-SnS2 for High-
Performance p-i-n Structured Planar Perovskite Solar Cells
Pramila Patila, Dilpreet Singh Manna, Umesh T. Nakateb, Yoon-Bong Hahnb,
Sung-Nam Kwona, and Seok-In Naa,
aProfessional Graduate School of Flexible and Printable Electronics, LANL - JBNU
Engineering Institute - Korea, Jeonbuk National University, 664-14, Baekje-daero, Deokjin-
gu, Jeonju-si, Jeollabuk-do, 561-756, Republic of Korea
bSchool of Semiconductor and Chemical Engineering, Solar Energy Research Center,
Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju-si, 54896, Jeollabuk-do,
Republic of Korea
Corresponding author. Tel.: +82 63 270 4465; fax: +82 63 270 2341
E-mail address: [email protected] (S.-I. Na)
Figure S1: Schematics for SnS2 synthesis and exfoliation process.
Figure S2: Full XPS survey for synthesized SnS2
Table S3: XRD analysis of synthesized SnS2
UPS data analysis
Parameter Standard values/Formula
(hkl)/2θ
Estimatedvalues
Crystallite size (D) (nm) Scherrer’sformula
D= K .λβ . cosθ
(001),(010),(011)(110),(111),(020)
3.8, 4.5, 5.2,8.7, 5.9, 6.1 Average = ~ 5.7
d – spacing (Å)JCPDS – Card no. 23-0677
5.85,3.135, 2.763,1.81, 1.729, 1.567
(001),(010),(011)(110),(111),(020)
5.95, 3.137, 2.765,1.82, 1.748, 1.564
Diffraction peak2θ (degree)
15.133, 28.447, 32.373, 50.375, 52.9, 58.868
(001),(010),(011)(110),(111),(020)
14.86, 28.42, 32.35,50, 52.24, 58.99
Dislocation density (lines/m2) X 1016
δ = 1/D2 (001),(010),(011)(110),(111),(020)
6.93,4.94,3.7,1.32, 2.87,2.69
Texture coefficient TC
TC hkl=
Ihkl
I 0
1N ∑ I hkl
I0
(001),(010),(011)(110),(111),(020)
0.31, 1.73, 0.15,0.7, 0.58, 1.68
The Fermi level of PCBM and PCBM-SnS2 can be calculated using the equation as shown
below (1)
EF = Ecut-off - 21.21 eV (1)
Where, EF is the Fermi level, Ecut-off is cut-off binding energy, and 21.21 eV is emission
energy of Helium irradiation. The Ecut-off values for PCBM and PCBM- SnS2 are 16.71 eV and
16.85 eV, respectively. The Fermi level of PCBM and PCBM-SnS2 are determined to be -4.5
eV and -4.36 eV, respectively. The valence band (EVB) is determined by equation
EVB = EF - Eedge (2)
Where, Eedge is Fermi edge. The Eedge of PCBM and PCBM-SnS2 are 1.38 eV and 1.58 eV,
respectively. Hence, the EVB of PCBM and PCBM-SnS2 are -5.88 eV and -5.99 eV,
respectively.
Figure: UPS spectra of perovskite layer
Figure S4: (a) EDS for PCBM-SnS2 deposited on perovskite layer and (b) EDS for pure PCBM. FESEM analysis of (c) Perovskite (d) PCBM and (e) PCBM-SnS2
Figure S5: J-V characteristics for PCBM and PCBM-SnS2 measured at forward and reverse scan directions.
Figure S6: The water contact angle of PCBM and PCBM-SnS2 deposited on perovskite layer
Figure S7: TEM image of (a) PCBM and (b) PCBM-SnS2 layer
Table S8: Summary on inorganic interfacial layer based PSCs with different structures
Structure Device configuration PCE (%) Reference
Planar/inverted ITO/NiO/Perovskite/PCBM-SnS2/ZnO/Ag 19.95 Present work
Planar/inverted ITO/PTAA/ Perovskite /PCBM/CMB-vTA/AZO/Ag
17.15 [1]
Planar/inverted FTO/NiO/GO/ Perovskite /GO-Li:TiOx/Al 11.2 [2]
Planar/inverted ITO/NiOx/ Perovskite /PCBM-F8Bt/Ag 15 [3]
Planar/inverted ITO/PEDOT:PSS/Perovskite/PCBM/BCP/Ag 17.26 [4]
Planar/inverted FTO/Cu-NiOx/Perovskite/PCBM/CeOx/Ag 16.70 [5]
References
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perovskite solar cells under ambient conditions with graphene-based inorganic charge
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Modification of Electron Transport Layer. 2019. 11(1) 147.
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improves the efficiency of pin planar perovskite solar cells. 2018. 10(24), 11342-
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