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ASPICs for High Energy Physics Applications Deepak Gajanana, Martin van Beuzekom Nikhef (National Institute for Subatomic Physics), Amsterdam Xaveer Leijtens Eindhoven University of Technology, Eindhoven 4-06-20141TIPP 2014 DGB et al.

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Contents TIPP 2014 DGB et al.24-06-2014 1. Introduction 2. Generic Integration Technology (InP) Example photonic ICs Application in HEP experiments An Application Specific Photonic Integrated Circuit integrates multiple optical components like sources, detectors, modulators etc. to save area, cost, power and add more functionality.

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Optical Waveguide TIPP 2014 DGB et al.34-06-2014 Simulated mode distribution 2 m 0.6 m Scanning Electron Microscope (SEM) photograph InGaAsP (1.3) InP Materials could be Si, Binary, Ternary and Quaternary semiconductors. Indium Phosphide (InP) in combination with InGaAsP has advantages of making light sources, detectors and other circuits at 1550 nm (3 rd generation telecom wavelength).

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Waveguide fabrication process TIPP 2014 DGB et al.44-06-2014 InP-substrate InGaAsP InP

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Optical Waveguide TIPP 2014 DGB et al.54-06-2014 75 m human hair

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Arrayed Waveguide Grating (AWG) COBRA 1988 TIPP 2014 DGB et al.64-06-2014 Smit, El. Lett, 1988

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MMI (Multi Mode Interference) Couplers TIPP 2014 DGB et al.74-06-2014 Simulated pattern Experimentally imaged pattern Geometry of MMI-couplers Acts as power splitter/combiner. Various power ratios possible.

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Mach Zehnder Switch TIPP 2014 DGB et al.84-06-2014 Electric field changes the refractive index and hence the phase change of the optical wave

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Photonic Integration with basic building blocks TIPP 2014 DGB et al.94-06-2014

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Moores law for InP based PICs TIPP 2014 DGB et al.104-06-2014 AWG-based devices

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Moores law for InP based PICs TIPP 2014 DGB et al.114-06-2014 Steenbergen 8x20 GHz WDM receiver PTL, 1996

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Moores law for InP based PICs TIPP 2014 DGB et al.124-06-2014 Infinira 10x10 Gb/s WDM TRX 2005, 51 components

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Moores law for InP based PICs TIPP 2014 DGB et al.134-06-2014 Nicholes, MOTOR chip, OFC 2009, UCSB, 145 components

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What Next? TIPP 2014 DGB et al.144-06-2014 Commercial Advantages : Integrating more functionality, reducing size and reducing cost

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Photonic IC Generic Integration platform TIPP 2014 DGB et al.154-06-2014 optical amplifier phase modulator PhaseAmplitude polarization converter Polarization waveguide Passive New design Powerful layout tools Powerful circuit simulation tools Designs from designers using the same platform Application Photonics Design Manual A designer Multi-project wafer Device back to users Wafer fab

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History repeats itself TIPP 2014 DGB et al.164-06-2014 MPC79, Lynn Conway Silicon electronic ICs 1979 Indium phosphide photonic ICs 2012

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Examples of ASPICs and applications TIPP 2014 DGB et al.174-06-2014

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External modulation technique TIPP 2014 DGB et al.184-06-2014 Modulators form the heart of the external modulation technique. InP Metal Data arm Databar arm Laser input Light output Mach Zehnder (MZ) Modulator Optical modulator Continuous wave injection laser Photo diode Amplification Digital read-out Chip Modulation Data acquisition & processing CW Laser Data

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KM3NeT is a cubic kilometer neutrino telescope to be installed in the Mediterranean sea. For more information : www.km3net.orgwww.km3net.org High density data readout in remote submarine conditions. Savings in area, cost and power motivate innovation, research and development of ASPICs. KM3NeT Detector concept TIPP 2014 DGB et al.194-06-2014 320m

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Concept for 80 Channels with Overlay DWDM* TIPP 2014 DGB et al.204-06-2014 Shore station 50/50 APD Lasers VOA on/off C1 1-80 C 82 SMA C2 11 1 2 11 D1 C 1-80 D2 11 20 DOM 50-200 GHz 200 GHz DWDM DU-String C - Band 80 REAM 2xCu DOM PIN CC 82 C-Band 1528-1568 nm L-Band 1568-1610 nm 50 GHz 200 GHz C 1-80 .. 200 GHz C 1,580 + C 82 .. MOD + Drivers LiNbO3 1:4 C - Band 1:20 20 x 1 c @1.25 Gbps (Downstream Data) 100 km 80 C @1.25 Gbps (Upstream Data) 80 C CW A2 A1 A3 Secondary Junction Box OTDR Timing mode Junction Box *R&D on high density data readout. Explored as an option - Not used in the project presently.

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Continuous wave light (one of the 20 wavelengths separated at 200 GHz ) is separated from the slow control data. The slow control data is detected by the photodiode and provided to the electronics. The data from the sensors (effective data rate ~1.25 Gbps upstream) modulates the CW light and is reflected. Aim is to integrate the building blocks (AWG, Modulator and PD) on a single die. InP based Colorless transceiver for KM3NeT TIPP 2014 DGB et al.214-06-2014 AWG Reflective Modulator 1 x 21 21 x 1 xx 11 PD DOM Electrical Domain 20 1+x1+x x can be any of the 20 wavelengths REAM 2xCu DOM PIN CC 82 will replace

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InP based Colorless transceiver for KM3NeT TIPP 2014 DGB et al.224-06-2014 Reflective circuit Test structures Transmissive circuit AWG Reflective Modulator 1 x 21 xx 11 PD DOM Electrical Domain 1+x1+x x can be any of the 20 wavelengths Reflective Modulator SOA AWG Transmissive Modulator 1 x 21 xx 11 PD DOM Electrical Domain 1+x1+x x can be any of the 20 wavelengths Transmissive Modulator SOA MMI AWGs channel spacing is dependent also on processing. With a loop back architecture, we remove the process variations on the AWG. Transmissive architecture can be used for testing purposes.

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ASPICs for High Energy Physics Experiments TIPP 2014 DGB et al.234-06-2014 Modulators form the heart of the external modulation technique. Little is known about radiation hardness of (InP) modulators. Ultimate goal : application at inner detectors at HL LHC. InP Metal Data arm Databar arm Laser input Light output Mach Zehnder (MZ) Modulator Optical modulator Continuous wave injection laser Photo diode Amplification Digital read-out Chip Modulation Detector High Radiation environment Low radiation Data acquisition & processing CW Laser Data

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Samples mounted in a shuttle that moves in and out of the 24 GeV/c proton beam at CERN to 1E12, 1E13, 1E14 and 1E15 p/cm2. Vertex detectors at HL-LHC require a radiation hardness ~ 1E16 p/cm2. The sample contains 22 modulators and measures 14mm 4 mm Beam Test of InP based MZ modulators TIPP 2014 DGB et al.244-06-2014 Submount dimensions : 48 mm 42 mm

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Measurements need precision alignment of chips and fibers. Lensed fibers are used to couple and collect light. Alignment of fibers are done manually using manipulators. Measurements of photonic chips TIPP 2014 DGB et al.254-06-2014 Bond wire Lensed fiber (9 u core) to be aligned to a 2 u wide 1u high waveguide.

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A Sample measurement TIPP 2014 DGB et al.264-06-2014 Input power = + 6dBm @ 1550nm Y axis Power (dBm) measured at the output. X axis Voltage scan on one of the arms of the modulator. InP Metal Data arm Databar arm Laser input Light output Imbalance PD

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WDM Modulator in the COBRA6 run TIPP 2014 DGB et al.274-06-2014 DC and RF electrical contacts WDM modulator MZ modulators SOA Waveguide facet Test SOA Test Modulator Test AWG MZ (DE)MUX SOA

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Preliminary Measurement results TIPP 2014 DGB et al.284-06-2014 CS = 400 GHzFSR = 2400 GHz Crosstalk = 16 dB InP Metal TMm arm TMp arm Laser input Light output Optical power meter (DE)MUX EDFA Optical Spectrum Analyzer On Chip

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Photonic Integration is in its nascent stages and holds a bright future. Physics experiments can benefit from custom ASPICs. Smaller, low power, more functionality, cheaper for large quantities Generic Photonic Integration platform and access to MPW runs makes it easier for designing ASPICs for High Energy Physics. Lot to be designed and measured, long way to go Conclusions and Future TIPP 2014 DGB et al.294-06-2014

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Arrayed Waveguide Grating TIPP 2014 DGB et al.304-06-2014 Vellekoop, 4-channel demux, JLT, 1991

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Moores law for InP based PICs TIPP 2014 DGB et al.314-06-2014 Herben, 4-channel 2x2 OXC, PTL, 1999

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Moores law for InP based PICs TIPP 2014 DGB et al.324-06-2014

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Generic Integration Technology TIPP 2014 DGB et al.334-06-2014 SOA (gain sections) Shallow etched waveguide Deep etched waveguide Electrical isolation section Phase modulator Waveguides are ~ 2um wide and a um high Phase change is brought by applying an electric field and changing the refractive index Minimum resolution in COBRA process ~ 100 nm

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Examples of Non-telecom Application Areas TIPP 2014 DGB et al.344-06-2014 Optical Coherence Tomography Compact Frequency-comb generators for metrology Readout units for fibre strain sensors Skin Analysis

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OPA02_02 Colorless transceiver TIPP 2014 DGB et al.354-06-2014 Integration of such (de-)multiplexers, modulators and photodiode in a single die saves cost and area. Reflective and transmissive (for test purposes) configurations included. Aimed as an alternative for the REAM solution. Polarization dependence is a potential problem.

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Irradiated and Non-Irradiated Sample measurements TIPP 2014 DGB et al.364-06-2014 Input power = + 6dBm @ 1550nm Y axis Power (dBm) measured at the output. X axis Voltage scan on one of the arms of the modulator. Attenuation at zero bias = 7 dB No phase behaviour! InP Metal Data arm Databar arm Laser input Light output Imbalance PD

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Two main types of modulators Absorptive modulators Absorption coefficient of the material in the modulator can be manipulated by the Franz-Keldysh effect (bulk semiconductors), the Quantum-confined Stark effect (InP QW, QDs), excitonic absorption, changes of Fermi level, or changes of free carrier concentration (bulk Si, InP). Refractive modulators. make use of an electro-optic effect like Pockels effect (linear EO effect) (LiNbO 3, GaAs), Kerr effect (quadratic EO effect) (Nitrobenzene) to change the refractive index. Modulators TIPP 2014 DGB et al.374-06-2014

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SP08-2-3 SMART Photonics Run TIPP 2014 DGB et al.384-06-2014 AWG Reflective Modulator 1 x 21 xx 11 PD DOM Electrical Domain 1+x1+x x can be any of the 20 wavelengths Reflective Modulator SOA AWGs channel spacing is dependent also on processing. With a loop back architecture, we remove the process variations on the AWG.

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SP08-2-3 SMART Photonics Run TIPP 2014 DGB et al.394-06-2014 AWG Transmissive Modulator 1 x 21 xx 11 PD DOM Electrical Domain 1+x1+x x can be any of the 20 wavelengths Transmissive Modulator SOA MMI Transmissive architecture can be used for testing purposes.

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Custom PCBs: Mount and handle the non-packaged optical circuits. Bias the circuits during irradiation to imitate the operating conditions. Submount design TIPP 2014 DGB et al.404-06-2014 PCB Backside of Al piece Peltier / TEC element Al piece for heat dissipation

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Packaging of Photonic chips - example TIPP 2014 DGB et al.414-06-2014 Linkra packaging proposal of the TxRx chip

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Commercial Operation TIPP 2014 DGB et al.424-06-2014 Cost of an MPW: 50-100 k With 10 designs: 5-10 k per design For this money you get ~20 chips Cost for your chips: