awards...tion award for tft compact modeling and circuit design 2016. he was a china 1000 talent...

22020 IEEE International Electron Devices Meeting

December 2020

Awardsto be

presented during the virtual

IEEE Electron Devices Society

2014IEEE Electron Devices Society

Award Recipients

EDS J.J. Ebers Award

Joachim N. Burghartz

EDS Education Award

Juin J. Liou

EDS Distinguished Service Award

Yuan Taur

��


Award Recipients

IEEE EDS Fellows - Class of 2020

EDS Paul Rappaport Award

EDS George E. Smith Award

EDS Leo Esaki Award

EDS Distinguished Service AwardProfessor Jacobus W. Swart

EDS Education AwardProfessor Chennupati Jagadish (2019) & Professor V. Ramgopal Rao

EDS Lester F. Eastman AwardProfessor Asif Khan

EDS J.J. Ebers AwardProfessor Arokia Nathan

EDS Celebrated MemberProfessor Robert W. Dutton


Award Recipients



EDS Education Award

Juin J. Liou


Yuan Taur

��

EDS MEMBERS ELECTED FELLOW2020

IEEE Fellow is a distinction reserved for select IEEEmembers whose extraordinary accomplishments inany of the IEEE fields of interest are deemed fitting ofthis prestigious grade elevation.

Only lists IEEE/EDS Fellows that would like to be recognized at the 2020 IEDM

Geoffrey Burr

Ting-chang Chang

Chion Chui

Barbara De Salvo

Muhammad Hussain

Benjamin Iniguez

Martin Kuball

Wallace Lin

Po-tsun Liu

Durgamadhab Misra

Bich-yen Nguyen

Shouleh Nikzad

Byung-gook Park

Ravi Todi


Award Recipients



EDS Education Award

Juin J. Liou


Yuan Taur

��

The Paul Rappaport Award was established in 1984 to recog-nize the best paper appearing in a fast turn around archivalpublication of the IEEE Electron Devices Society, targeted tothe IEEE Transactions on Electron Devices.

Winning Paper:Enhanced Reliability of 7nm Process Technology

Featuring EUV

Authors:Kihyun Choi, Hyun Chul Sagong, Wonchang Kang,

Hyunjin Kim, Jiang Hai, Miji Lee, Bomi Kim, Mi-ji Lee,Soonyoung Lee, Hyewon Shim, Junekyun Park,

YoungWoo Cho, Hwa Sung Rhee and Sangwoo Pae

EDS PAUL RAPPAPORT AWARD


Award Recipients



EDS Education Award

Juin J. Liou


Yuan Taur

��

The George E. Smith Award was established in 2002 to rec-ognize the best paper appearing in a fast turn around archivalpublication of the IEEE Electron Devices Society, targeted tothe IEEE Electron Device Letters.

Winning Paper:"Large-Area 1.2-kV GaN Vertical Power FinFETs

With a Record Switching Figure of Merit"

Authors:Yuhao Zhang, Min Sun, Josh Perozek, Zhihong Liu,Anmad Zubair, Daniel Piedra, Nadim Chowdhury,Xiang Gao, Kenneth Shepard and Tomas Palacios

EDS GEORGE E. SMITH AWARD


Award Recipients



EDS Education Award

Juin J. Liou


Yuan Taur

��

The EDS Leo Esaki Award was established in 2019 to recog-nize the best paper appearing in a fast turn around archivalpublication of the IEEE Electron Devices Society, targeted tothe IEEE Journal of Electron Devices Society.

Winning Paper:Ferroelectric HfO2 Tunnel Junction Memory with

High TER and Multi-level Operation Featuring Metal Replacement Process

Authors:Masaharu Kobayashi, Yusaku Tagawa, Fei Mo,

Takuya Saraya and Toshiro Hiramoto

EDS LEO ESAKI AWARD


Award Recipients



EDS Education Award

Juin J. Liou


Yuan Taur

��

EDS DISTINGUISHED SERVICE AWARDThe EDS Distinguished Service Award was established in1993 by the IEEE Electron Devices Society.

The Award is presented annually and is intended torecognize and honor outstanding service to the ElectronDevices Society and its sponsored activities.

PREVIOUS AWARD WINNERS1994 Friedolf M. Smits1995 Lewis M. Terman1996 Alfred U. Mac Rae1997 George E. Smith1998 W. Dexter Johnston, Jr.1999 John R. Brews2000 Michael S. Adler2001 H. Craig Casey, Jr.2002 Lucian A. Kasprzak2003 Frederick H. Dill2004 Louis C. Parrillo2005 Cary Y. Yang2006 Steven J. Hillenius2007 Richard S. Muller2008 Hiroshi Iwai2009 Tak H. Ning2010 Marvin H. White2011 Ilesanmi Adesida2012 Douglas P. Verret2013 Cor L. Claeys2014 Yuan Taur2015 -2016 Renuka P. Jindal2017 Paul K.L. Yu2018 Shuji Ikeda2019 Albert Z. H. Wang


Award Recipients



EDS Education Award

Juin J. Liou


Yuan Taur

��

Jacobus W. Swart received his B. Engineering and Dr. Engineering De-grees in 1975 and 1981 respectively, from the Polytechnic School of theUniversity of São Paulo, Brazil. After his Dr. Degree, he worked at thefollowing institutions: K. U. Leuven, Belgium, 1982-83, as a pos-doc.;CTI, Campinas, 1984; University of São Paulo, 1985-88, as AssistantProfessor; SID Microeletrônica, 1986, as process engineering; RTI, USA,1991, as a Visiting Scientist and since 1988 at State University of Camp-inas, as Full Professor until retirement in 2013, when he assumed a po-sition as collaborator professor. He served as director of the Center for

Semiconductor Components, from April 1998 to April 2005. From May 2007 until June 2011 hewas on leave from the University to serve as General Director of CTI, a national research cen-ter. During this time he was the coordinator of the IC Brazil program, leading ASIC designtraining centers and a network of local design houses. He was the leader of a large researchnetwork in Brazil, called INCT NAMITEC, from 2001 until 2016. Since 2013 he provides serviceto imec, Belgium, as their representative in Brazil. Dr Swart has published around 300 papersin Journals and Conferences covering his reseach work on materials, fabrication processing,device characterization and modelling and ASIC design. He is ranked as fellow researcher,level 1A (highest) at CNPq and is a Fellow of the São Paulo State Academy of Science and ofNational Engineering Academy.

He is a Life Fellow of IEEE and served on different positions for EDS, as secretary, BoG mem-ber, Distinguished Lecturer, member of many committees, Region 9 Subcommittee for Re-gions and Chapters (SRC) Chair, founder and chair of South Brazil EDS chapter and advisor ofEDS student chapter at UNICAMP. He was member and/or chair of many organizing conferencecommittees in Region 9, especially in Brazil, including conferences as SBMicro, ICCDCS andLAEDC. He was president of SBMicro Sociedty for two terms, and promoted the SBMicro con-ference as a technically co-sponsered conference of EDS.

Jacobus was born in The Netherlands in 1950 and emigrated to Brazil with his parents and tenbrothers and sisters in 1958, as farmers. He was the only one that did not followed the farm-ing profession. He met and married Nilza during undergraduate studies and they have threechildren: Hugo, Laura and Julia, two Electronics Engineers and one Economist. Presently, heand Nilza are blessed with ten grandchildren.

2020 EDS DISTINGUISHED SERVICE AWARDRECIPIENT

PROFESSOR JACOBUS W. SWART


Award Recipients



EDS Education Award

Juin J. Liou


Yuan Taur

��

PROFESSOR JACOBUS W. SWARTKEY POSITIONS HELD

EDS/IEEE Service Activities

2002-2006 EDS South-Brazil Chapter Chair

2003-Present EDS UNICAMP Student Chapter Advisor

2004-Present EDS Distinguished Lecturer

2006-2008 EDS Newsletter co-Editor

2006-2015 EDS Membership Committee Member

2007-2016 EDS Education Committee Member

2008 ICCDCS Program Chair

2008-2011 EDS Region 9 Subcommittee for Regions and Chapters (SRC) Member

2012-2017 EDS Region 9 Subcommittee for Regions and Chapters (SRC) Chair

2012-2017 EDS Region 9 Outstanding Student Paper Award Committee Chair

2013-2017 EDS VLSI Technology and Circuits Technical Committee Member

2014-2015 EDS Constitution & Bylaws Review AdHoc Committee Chair

2014-2016 EDS BoG Elected Member

2014-2017 EDS Awards Committee Member

2016-Present IEEE Cledo Brunetti Award Committee Member

2017-2019 EDS BoG Elected Member

2017-2019 EDS Fellow Evaluation Committee Member

2018-2019 EDS Secretary

2018-2019 EDS Newsletter Committee Chair

2018-2019 EDS Early Career Award Committee Member

2018-2019 EDS Publication Committee Member

2018-2019 IEEE Cledo Brunetti Award Committee Chair

2019-Present LAEDC Organizing Committee Member

2020-Present EDS Region 9 Outstanding Student Paper Award Committee Member

2001-2008 SBMicro Organizing Committee Member

2020 SBMicro General Chair


Award Recipients



EDS Education Award

Juin J. Liou


Yuan Taur

��

EDUCATION AWARD

The EDS Education Award was established in 2006 bythe IEEE Electron Devices Society.

The Award is presented annually and is intended torecognize distinguished contributions to educationwithin the fields of interest of the IEEE Electron DevicesSociety.

PREVIOUS AWARD WINNERS2006 Mark S. Lundstrom2007 Meyya Meyyappan2008 Robert W. Dutton2009 David L. Pulfrey2010 Sorab K. Ghandhi2011 Chenming Hu2012 Jesús Del Alamo2013 Charvaka Duvvury2014 Juin J. Liou2015 Roger T. Howe2016 Hiroshi Iwai2017 Mansun Chan2018 Muhammad Ashraful Alam


Award Recipients



EDS Education Award

Juin J. Liou


Yuan Taur

��

2019 EDUCATION AWARD RECIPIENTPROFESSOR CHENNUPATI JAGADISH

“For distinguished and sustained contributions globally to education, training

and mentoring in the field of interest of the IEEE Electron Devices Society”

Professor Chennupati Jagadish is a Distinguished Professorand Head of Semiconductor Optoelectronics and Nanotech-nology Group in the Research School of Physics and Engi-neering, Australian National University. He has served asVice-President and Secretary Physical Sciences of the Aus-tralian Academy of Science during 2012-2016. He is currentlyserving as President of IEEE Photonics Society, Past Presidentof Australian Materials Research Society. Prof. Jagadish is an

Editor/Associate editor of 5 Journals, 3 book series and serves on editorial boardsof 19 other journals. He has published more than 920 research papers (640 jour-nal papers), holds 5 US patents, co-authored a book, co-edited 17 books and ed-ited 12 conference proceedings and 17 special issues of Journals. He won the 2000IEEE Millennium Medal and received Distinguished Lecturer awards from IEEE NTC,IEEE Photonics Society and IEEE EDS. He is a Fellow of the Australian Academy ofScience, Australian Academy of Technological Sciences and Engineering, The WorldAcademy of Sciences, US National Academy of Inventors, Indian National ScienceAcademy, Indian National Academy of Engineering, Indian Academy of Science, Eu-ropean Academy of Sciences, Andhra Pradesh Akademi of Science, IEEE, APS, MRS,OSA, AVS, ECS, SPIE, AAAS, FEMA, APAM, IoP (UK), IET (UK), IoN (UK) and the AIP. Hereceived many awards including IEEE Pioneer Award in Nanotechnology, IEEE Pho-tonics Society Engineering Achievement Award, OSA Nick Holonyak Jr Award,Welker Award, IUMRS Somiya Award, UNESCO medal for his contributions to the de-velopment of nanoscience and nanotechnologies and Lyle medal from AustralianAcademy of Science for his contributions to Physics. He has received Australia’shighest civilian honor, AC, Companion of the Order of Australia, as part of 2016 Aus-tralia day honors from the Governor General of Australia for his contributions tophysics and engineering, in particular nanotechnology.


Award Recipients



EDS Education Award

Juin J. Liou


Yuan Taur

��

2020 EDUCATION AWARD RECIPIENTPROFESSOR VALIPE RAMGOPAL RAO

“For educational leadership and establishing

nanoelectronics research programs in India”

Prof. V. Ramgopal Rao is currently the Director at IIT Delhi. Before joiningIIT Delhi as the Director in April 2016, Dr. Rao served as a P. K. Kelkar ChairProfessor for Nanotechnology in the Department of Electrical Engineer-ing, IIT Bombay. Dr. Rao has over 450 research publications in the area ofnano-scale devices & sensors and is an inventor on 45 patents and patentapplications. For his research contributions, Dr. Rao is elected a Fellow ofIEEE, a Fellow of the Indian National Academy of Engineering, the IndianAcademy of Sciences, the National Academy of Sciences, and the IndianNational Science Academy. Prof. Rao's work is recognized with many

awards and honors in the country and abroad. Prof. Rao was an Editor for the IEEE Transactionson Electron Devices during 2003-2012 for the CMOS Devices and Technology area and currentlyserves on the Editorial Advisory Board of ACS Nano Letters. He is a Distinguished Lecturer, IEEEElectron Devices Society and interacts closely with many semiconductor industries both in Indiaand abroad.

Prof. Ramgopal Rao has helped create a vibrant ecosystem for nanoelectronics education, re-search and entrepreneurship in India. Prof. Rao was the Chief Investigator for the path-breakingCenter of Excellence in Nanoelectronics (CEN) project at IIT Bombay, set up jointly with IISc Ban-galore, by the Government of India. Prof. Rao was also the architect and the Chief Investigator forthe Indian Nanoelectronics Users Program (INUP), which initiated Nanoelectronics activities inover 200 institutions in the country. The INUP program has impacted the research activities of over10000 researchers in India so far.

Prof. Rao played a key role in driving the emergence of a vital industry-academia collaborationin India through the Ministry of Electronics & Information Technology (MeitY) and the Departmentof Science & Technology, Govt. of India programs. Based on his leadership in education and re-search and through his involvement with the institutes in formulating the proposals, MeitY hasset up seven National Centres of Excellence in the field of Nanoelectronics across the country,leading to a significant growth of this vital sector in India. Prof. Rao is also responsible for set-ting up the country’s first Prototype Manufacturing Facility at IIT Bombay for use by the Small &Medium scale industries for developing products and prototypes in the area of Nanoelectronics.

For more information about Prof. Ramgopal Rao’s current research activities, please visithttps://www.ee.iitb.ac.in/~rrao/.


Award Recipients



EDS Education Award

Juin J. Liou


Yuan Taur

��

The Lester F. Eastman Award was established in 2019by the IEEE Electron Devices Society. It is intended torecognize individuals with outstanding achievement inhigh-performance semiconductor devices.

EDS LESTER F. EASTMAN AWARD


Award Recipients



EDS Education Award

Juin J. Liou


Yuan Taur

��

2020 EDS LESTER F. EASTMAN AWARD RECIPIENTPROFESSOR ASIF KHAN

“For outstanding achievement in high-performance semiconductor devices”

Asif Khan is a Carolina Distinguished Professor in the Electrical Engineer-ing Department at University of South Carolina. From 1979 to 1985 heworked at Honeywell Inc. in Minneapolis Minnesota as a Senior PrincipalResearch Scientist. There, he initiated research in MOCVD growth and fab-rication of AlxGa1-xN solar-blind UV sensors. From 1985 to 1987 he workedin the Optical recording project at 3M Corporation in Saint Paul Minnesota.For the next 10 years (1987-1997) he served as the Vice President of the Op-toelectronics Division of APA Optics in Blaine Minnesota. Since 1997 he isworking at the University of South Carolina (USC).

His research at APA Optics and South Carolina resulted in the first demonstrations of high-qualityAlGaN-GaN heterostructures exhibiting 2-Dimensional Electron Gas (2-DEG). This enabled him andhis teams to demonstrate for the first time all the key fundamental building blocks for the fields ofIII-N High Frequency and High-Power Electronics and Deep Ultraviolet Light Emitting Diodes (LEDs).These first demonstrations included: (i) GaN MESFETs (1992); (ii) 2-Dimensional Electron Gas in GaN-AlGaN Heterojunctions (1992); (iii) GaN-AlGaN High Electron Mobility Transistor (HEMT) (1993); (iv)GaN-AlGaN Insulated-Gate High Electron Mobility Transistor (MOS-HEMT) (1999); (v) AlInGaN-basedUltra-Violet B/Ultra-Violet C (UVB/UVC) LEDs (2001); and (vi) High power sub-280 nm UVC LEDs (2002).More recently, his South Carolina group has pioneered novel ultra-high voltage Ultrawide BandgapAlGaN-channel HEMTs and integrated photonic circuits using AlxGa1-xN-based UVC LEDs, photode-tectors, and waveguides.

Asif was also the founding member of two South Carolina small businesses which commercializedthe technology that his South Carolina research group developed. These businesses, Nitek Inc. andSensor Electronic Technology Inc. have now been acquired by Seoul Semiconductor and Seoul ViosysCompany and function as their subsidiary in the US. He is also the recipient of the University ofSouth Carolina Russell Research Award for Science and Engineering (2002) and the State of SouthCarolina Governors Award for Excellence in Scientific Research (2015).

Asif received his B.Sc. (Hons) and M.Sc. degrees from the University of Karachi and his Ph.D from MIT.He is a Fellow of the IEEE and serves as a member of International advisory committee of the In-ternational Workshop on Nitride Semiconductors (IWN) and the International Conference on NitrideSemiconductors, the two major gatherings of the III-Nitride research community. He lives with wifeRubina in Irmo South Carolina.


Award Recipients



EDS Education Award

Juin J. Liou


Yuan Taur

��

The J.J. Ebers Award was established in 1971by the IEEE Electron Devices Society. It is in-tended to foster progress in electron devicesand to commemorate the life activities ofJewell James Ebers, whose distinguishedcontributions, particularly in the transistor art,shaped the understanding and technology ofelectron devices. The award is intended torecognize and honor accomplishments of un-usual merit in the electron device field and is given for out-standing technical contributions to electron devices.

J.J. EBERS1921 – 1957

EDS J.J. EBERS AWARD

1971 John L. Moll1972 Charles W. Mueller1973 Herbert Kroemer1974 Andrew S. Grove1975 Jacques I. Pankove1976 Marion E. Hines1977 Anthony E. Siegman1978 Hung C. Lin1979 James M. Early1980 James D. Meindl1981 Chih-Tang Sah1982 Arthur G. Milnes1983 Adolf Goetzberger1984 Izuo Hayashi1985 Walter F. Kosonocky1986 Pallab K. Chatterjee1987 Robert W. Dutton1988 Al F. Tasch, Jr.1989 Tak H. Ning1990 Yoshiyuki Takeishi1991 Simon M. Sze1992 Louis C. Parrillo

Richard S. Payne1993 Karl Hess1994 Alfred U. Mac Rae

1995 Martin A. Green1996 Tetsushi Sakai1997 Marvin H. White1998 B. Jayant Baliga1999 James T. Clemens2000 Bernard S. Meyerson2001 Hiroshi Iwai2002 Lester F. Eastman2003 James D. Plummer2004 Jerry G. Fossum2005 Bijan Davari2006 Ghavam G. Shahidi2007 Stephen J. Pearton2008 Mark R. Pinto2009 Baruch Levush2010 Mark E. Law2011 Stuart Ross Wenham2012 Yuan Taur2013 Nobukazu Teranishi2014 Joachim N. Burghartz2015 Jack Yuan-Chen Sun2016 Jaroslav Hynecek2017 Kang L. Wang2018 Michael Shur2019 H.-S. Philip Wong

PREVIOUS AWARD WINNERS


Award Recipients



EDS Education Award

Juin J. Liou


Yuan Taur

��

2020 EDS J.J. EBERS AWARD RECIPIENTPROFESSOR AROKIA NATHAN

“For contributions to thin film transistors and

flexible/foldable electronics integration strategies”

Arokia Nathan is a leading pioneer in the development and application of thin filmtransistor technologies to flexible electronics, display and sensor systems. In a re-search career spanning over thirty years, he has had a profound impact on the de-sign and development of TFT circuit architectures that greatly enabled therealization of commercial OLED displays, high-resolution image sensors, and largearea 3D touch sensor systems. His research has resulted in 600 publications in-cluding 4 books. A prolific inventor, his ideas led to over 110 patents and the estab-lishment of four companies to commercialize the technology: IGNIS Innovationdeveloping fully-compensated TFT-OLED rigid and flexible displays, Cambridge Touch

Technologies on 3D smart-skin for human-machine interactivity, ACXEL Technology on high-resolution digitalfluidics for in-vitro and single-cell diagnosis, and CamXT on TFT compact modeling and parameter extraction.

Following his PhD in Electrical Engineering, University of Alberta, Canada in 1988, he joined LSI Logic USA work-ing on advanced multi-chip packaging. Subsequently he was at the Institute of Quantum Electronics, ETH Zürich,Switzerland, before joining the Electrical and Computer Engineering Department, University of Waterloo, Canada.Here he held the DALSA/NSERC Industrial Research Chair in sensor technology and then the Canada ResearchChair in nano-scale flexible circuits, and in 2000 led the establishment of the Giga-to-Nanoelectronics Centre.In 2006, he joined the London Centre for Nanotechnology, University College London as the Sumitomo Chair ofNanotechnology. He moved to Cambridge University in 2011 as the Chair of Photonic Systems and Displays, anddirected a large multi-disciplinary research team on heterogeneous integration of sensors, TFTs and energy de-vices for wearable technologies. He is currently a Bye-Fellow and Tutor at Darwin College, University of Cam-bridge.

In recognition for his role in TFT technology and flexible electronics, he was awarded the NSERC E.W.R. SteacieFellowship in 2001, the Royal Society Wolfson Research Merit Award 2006, and the BOE Distinguished Contribu-tion Award for TFT Compact Modeling and Circuit Design 2016. He was a China 1000 Talent Plan Laureate 2013and received the Jiangsu Friendship Award 2014. In 2019, the University of Waterloo bestowed upon him Doctorof Science honoris causa in recognition for his leadership in undergraduate program development in Nan-otechnology Engineering.

Arokia Nathan had leadership roles in IEEE with service to EDS, Photonics Society and the Solid State CircuitsSociety. He served on the Board of Governors of EDS and on Editorial Boards of IEEE Proceedings, IEEE Trans.Devices, Materials, and Reliability, and IEEE Electron Device Letters. He also served as Editor-in-Chief of IEEE/OSAJournal of Display Technology and as Guest Editor for a two-part Special Issue on Flexible Electronics Technol-ogy in the Proceedings of the IEEE in 2004. He is a Fellow of IEEE (USA), an IEEE/EDS Distinguished Lecturer, aChartered Engineer (UK), and Fellow of the Institution of Engineering and Technology (UK).


Award Recipients



EDS Education Award

Juin J. Liou


Yuan Taur

��

EDS CELEBRATED MEMBER

The EDS Celebrated Member was established in 2010by the IEEE Electron Devices Society. It is intended torecognize and honor legendary individuals in the fieldof electron devices.

PREVIOUS CELEBRATED MEMBERS

2010 George E. Smith

2011 Herbert Kroemer

2012 Chih-Tang Sah

Leo Esaki

2015 B. Jayant Baliga

Robert H. Dennard

2016 Mildred Dresselhaus

2017 Gordon E. Moore

Simon M. Sze

2018 Martin Green

2019 Leon Chua


Award Recipients



EDS Education Award

Juin J. Liou


Yuan Taur

��

EDS CELEBRATED MEMBERPROFESSOR ROBERT W. DUTTON

“For fundamental contributions to the field of electron devices

for the benefit of humanity”

Robert W. Dutton received the B.S., M.S., and Ph.D. in Electri-cal Engineering degrees from the University of California,Berkeley, in 1966, 1967, and 1970, respectively.

He is currently Robert and Barbara Kleist Professor of Elec-trical Engineering at Stanford University, and Associate Chair

for Undergraduate Education. He has held summer staff positions at Fairchild,Bell Telephone Laboratories, Hewlett-Packard, IBM Research, and Matsushita dur-ing 1967, 1973, 1975, 1977, and 1988 respectively. His research interests focus onintegrated circuit process, device, and circuit technologies, especially the use ofcomputer-aided design (CAD) and parallel computational methods. He has pub-lished more than 200 journal articles and graduated more than four dozen doc-torate students.

Dr. Dutton was Editor of the IEEE Transactions on Computer Aided Design from1984 to 1986, the winner of the 1987 IEEE J. J. Ebers Award, 1988 Guggenheim Fel-lowship to study in Japan, elected to the National Academy of Engineering in1991, 1996 Jack A. Morton Award, 2000 C&C Prize Japan, University ResearcherAward, Semiconductor Industry Association (2000), Phil Kaufman Award, Elec-tronic Design Automation Consortium (2006), and 2014 Bass University Fellow inUndergraduate Education Program, Stanford University.

IEEE EDS Executive Office445 Hoes Lane

Piscataway, NJ 08854Tel: +1 732 562 3927Fax: +1 732 235 1626E-Mail: [email protected]

Web: www.ieee.org/eds

awards...tion award for tft compact modeling and circuit design 2016. he was a china 1000 talent...

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