bfp420f data sheet - pc components · teaklite™ of ceva, inc. tektroni x™ of tektronix inc....

RF & Protect ion Devices

Data Sheet Revision 1.0, 2012-01-30

BFP420FLow Noise Silicon Bipolar RF Transistor

Edition 2012-01-30Published by Infineon Technologies AG 81726 Munich, Germany© 2012 Infineon Technologies AG All Rights Reserved.

Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).

WarningsDue to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

http://www.infineon.com

BFP420F

Data Sheet 3 Revision 1.0, 2011-09-05

Trademarks of Infineon Technologies AGBlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™, PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SensoNor™, SIEGET™, SINDRION™, SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™, XPOSYS™.

Other TrademarksAdvance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.Last Trademarks Update 2010-03-22

BFP420F, Low Noise Silicon Bipolar RF Transistor Revision History: 2011-09-05, Revision 1.0Previous Revision: Rev. 1.0Page Subjects (major changes since last revision)

This datasheet replaces the revision from 20 April 2007.The product itself has not been changed and the device characteristics remain unchanged.Only the product description and information available in the datasheet has been expanded and updated.

BFP420F

Table of Contents


Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

3 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114.4 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184.5 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

5 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

6 Package Information TSFP-4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Table of Contents

BFP420F

List of Figures


Figure 1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Figure 2 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Figure 3 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 18Figure 4 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18Figure 5 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 3 V. . . . . . . . . . . . . . . . . . . . . . . . . 19Figure 6 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 3 V . . . . . . . . . . . . . . . . . . . . 19Figure 7 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 3 V . . . . . . . . . . . . . . . . . . . . 20Figure 8 Collector Emitter Breakdown Voltage VCER = f (RBE), IC = 1 mA . . . . . . . . . . . . . . . . . . . . . . . . . . 20Figure 9 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21Figure 10 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters. . . . . . . . . . . . . . . . . 21Figure 11 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz . . . . . 22Figure 12 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz . . . . . . . . . 22Figure 13 Collector Base Capacitance CCB = f (VCB), f = 1 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23Figure 14 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23Figure 15 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 24Figure 16 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . 24Figure 17 Input Matching S11 = f ( f ), VCE = 3 V, IC = 4 / 15 / 45 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25Figure 18 Source Impedance for Minimum Noise Figure Zopt = f ( f ) , VCE = 3 V, IC = 4 / 15 mA . . . . . . . . . 25Figure 19 Output Matching S22 = f ( f ), VCE = 3 V, IC = 4 / 15 / 45 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26Figure 20 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 4 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . 26Figure 21 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 27Figure 22 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . 27Figure 23 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29Figure 24 Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29Figure 25 Marking Example (Marking BFP420F: AMs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29Figure 26 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

List of Figures

BFP420F

List of Tables


Table 1 Maximum Ratings at TA = 25°C (unless otherwise specified). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8Table 2 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Table 3 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Table 4 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Table 5 AC Characteristics, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Table 6 AC Characteristics, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Table 7 AC Characteristics, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Table 8 AC Characteristics, f = 1500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Table 9 AC Characteristics, f = 1900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Table 10 AC Characteristics, f = 2400 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Table 11 AC Characteristics, f = 3500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Table 12 AC Characteristics, f = 5500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

List of Tables

TSFP-4-1

1

24

3

Product Name Package Pin Configuration MarkingBFP420F TSFP-4-1 1 = B 2 = E 3 = C 4 = E AMs

Low Noise Silicon Bipolar RF Transistor

BFP420F


1 Features• Low noise high gain silicon bipolar RF transistor• Based on Infineon´s reliable very high volume 25 GHz

silicon bipolar technology• 0.9 dB minimum noise figure typical at 900 MHz, 3 V, 4 mA• 16 dB maximum gain (Gma) typical at 2.4 GHz, 3 V, 15 mA• 28 dBm OIP3 typical at 2.4 GHz, 4 V, 40 mA• 16.5 dBm OP1dB typical at 2.4 GHz, 4 V, 40 mA• Popular in discrete oscillators• Thin, small, flat, Pb-free (RoHS compliant) and Hal-free

(“green”) package with visible leads

Applications

As Low Noise Amplifier (LNA) in• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)• Multimedia applications such as mobile/portable TV, CATV, FM Radio• ISM applications like RKE, AMR and ZigbeeAs discrete active mixer in RF FrontendsAs active device in discretes oscillators

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

BFP420F

Maximum Ratings


2 Maximum Ratings

Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.

Table 1 Maximum Ratings at TA = 25°C (unless otherwise specified)Parameter Symbol Values Unit Note / Test Condition

Min. Max.Collector emitter voltage VCEO Open base

– 4.5 V TA = 25°C– 4.1 V TA = -55 °C

Collector base voltage VCBO – 15 V Open emitterCollector emitter voltage VCES – 15 V Emitter / base shortenedEmitter base voltage VEBO – 1.5 V Open collectorBase current IB 9 mA –Collector current IC – 60 mA –RF input power PRFin – – dBm –Total power dissipation1)

1) TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb.

Ptot – 210 mW TS ≤ 100 °CJunction temperature TJ – 150 °C –Storage temperature TStg -55 150 °C –

BFP420F

Thermal Characteristics


3 Thermal Characteristics

Figure 1 Total Power Dissipation Ptot = f (Ts)

Table 2 Thermal Resistance Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.Junction - soldering point1)

1) For calculation of RthJA please refer to Application Note Thermal Resistance AN 077RthJS – 240 – K/W –

0 25 50 75 100 125 1500

20

40

60

80

100

120

140

160

180

200

220

240

260

TS [°C]

Pto

t [mW

]

BFP420F

Electrical Characteristics

4 Electrical Characteristics

4.1 DC Characteristics

4.2 General AC Characteristics

Table 3 DC Characteristics at TA = 25 °C Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.Collector emitter breakdown voltage V(BR)CEO 4.5 5.5 – V IC = 1 mA, IB = 0

Open baseCollector emitter leakage current ICES – – 10 μA VCE = 15 V, VBE = 0

– 1 30 nA VCE = 3 V, VBE = 0Emitter/base shorted

Collector base leakage current ICBO – 1 30 nA VCB = 3 V, IE = 0Open emitter

Emitter base leakage current IEBO – 10 100 nA VEB = 0.5 V, IC = 0Open collector

DC current gain hFE 60 95 130 VCE = 4 V, IC = 5 mAPulse measured

Table 4 General AC Characteristics at TA = 25 °C Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.Transition frequency fT 18 25 – GHz VCE = 3 V, IC = 30 mA

f = 2 GHzCollector base capacitance CCB – 0.15 0.3 pF VCB = 2 V, VBE = 0

f = 1 MHzEmitter grounded

Collector emitter capacitance CCE – 0.46 – pF VCE = 2 V, VBE = 0f = 1 MHzBase grounded

Emitter base capacitance CEB – 0.55 – pF VEB = 0.5 V, VCB = 0f = 1 MHzCollector grounded


BFP420F


4.3 Frequency Dependent AC Characteristics

Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C

Figure 2 Testing Circuit

Table 5 AC Characteristics, f = 150 MHz Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.Maximum power gain dB ZS = ZSoptG, ZL = ZLoptG

@ low noise operating point Gms – 30 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point Gms – 34.5 – VCE = 3 V, IC = 15 mA@ max. linearity operating point Gms – 37 – VCE = 4 V, IC = 40 mATransducer gain dB ZS = ZL = 50 Ω@ low noise operating point S21 – 22 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point S21 – 30 – VCE = 3 V, IC = 15 mA@ max. linearity operating point S21 – 33 – VCE = 4 V, IC = 40 mANoise figure dB ZS = ZSoptN

@ low noise operating point VCE = 3 V, IC = 4 mAMinimum noise figure NFmin – 0.9 –Associated gain Gass – 24 –@ recommended trade off oper. point VCE = 3 V, IC = 15 mAMinimum noise figure NFmin – 1.4 –Associated gain Gass – 29 –Linearity dBm ZS = ZL = 50 Ω@ recommended trade off oper. point VCE = 3 V, IC = 15 mA3rd order intercept point at output OIP3 – 21 –1 dB gain compression point at output OP1dB – 7 –

OUT

IN

Bias-T

Bias-TB

(Pin 1)

E C

E

VCTop View

VB


BFP420F


@ max. linearity operating point VCE = 4 V, IC = 40 mA3rd order intercept point at output OIP3 – 25 –1 dB gain compression point at output OP1dB – 15.5 –



@ low noise operating point Gms – 25 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point Gms – 29 – VCE = 3 V, IC = 15 mA@ max. linearity operating point Gms – 31 – VCE = 4 V, IC = 40 mATransducer gain dB ZS = ZL = 50 Ω@ low noise operating point S21 – 21 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point S21 – 27 – VCE = 3 V, IC = 15 mA@ max. linearity operating point S21 – 28.5 – VCE = 4 V, IC = 40 mANoise figure dB ZS = ZSoptN

@ low noise operating point VCE = 3 V, IC = 4 mAMinimum noise figure NFmin – 0.9 –Associated gain Gass – 22.5 –@ recommended trade off oper. point VCE = 3 V, IC = 15 mAMinimum noise figure NFmin – 1.4 –Associated gain Gass – 27 –Linearity dBm ZS = ZL = 50 Ω@ recommended trade off oper. point VCE = 3 V, IC = 15 mA3rd order intercept point at output OIP3 – 21.5 –1 dB gain compression point at output OP1dB – 8 –@ max. linearity operating point VCE = 4 V, IC = 40 mA3rd order intercept point at output OIP3 – 26.5 –1 dB gain compression point at output OP1dB – 16.5 –



@ low noise operating point Gms – 22 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point Gms – 25 – VCE = 3 V, IC = 15 mA@ max. linearity operating point Gms – 26.5 – VCE = 4 V, IC = 40 mA

Table 5 AC Characteristics, f = 150 MHz (cont’d)

Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max.


BFP420F


Transducer gain dB ZS = ZL = 50 Ω@ low noise operating point S21 – 19 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point S21 – 23 – VCE = 3 V, IC = 15 mA@ max. linearity operating point S21 – 24 – VCE = 4 V, IC = 40 mANoise figure dB ZS = ZSoptN

@ low noise operating point VCE = 3 V, IC = 4 mAMinimum noise figure NFmin – 0.95 –Associated gain Gass – 20 –@ recommended trade off oper. point VCE = 3 V, IC = 15 mAMinimum noise figure NFmin – 1.4 –Associated gain Gass – 23 –Linearity dBm ZS = ZL = 50 Ω@ recommended trade off oper. point VCE = 3 V, IC = 15 mA3rd order intercept point at output OIP3 – 23.5 –1 dB gain compression point at output OP1dB – 8 –@ max. linearity operating point VCE = 4 V, IC = 40 mA3rd order intercept point at output OIP3 – 27.5 –1 dB gain compression point at output OP1dB – 17 –



@ low noise operating point Gms – 19 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point Gms – 22 – VCE = 3 V, IC = 15 mA@ max. linearity operating point Gma – 22 – VCE = 4 V, IC = 40 mATransducer gain dB ZS = ZL = 50 Ω@ low noise operating point S21 – 16 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point S21 – 19 – VCE = 3 V, IC = 15 mA@ max. linearity operating point S21 – 19.5 – VCE = 4 V, IC = 40 mANoise figure dB ZS = ZSoptN

@ low noise operating point VCE = 3 V, IC = 4 mAMinimum noise figure NFmin – 1 –Associated gain Gass – 16.5 –@ recommended trade off oper. point VCE = 3 V, IC = 15 mAMinimum noise figure NFmin – 1.5 –Associated gain Gass – 19 –




BFP420F


Linearity dBm ZS = ZL = 50 Ω@ recommended trade off oper. point VCE = 3 V, IC = 15 mA3rd order intercept point at output OIP3 – 22.5 –1 dB gain compression point at output OP1dB – 7 –@ max. linearity operating point VCE = 4 V, IC = 40 mA3rd order intercept point at output OIP3 – 27.5 –1 dB gain compression point at output OP1dB – 16 –



@ low noise operating point Gms – 18 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point Gma – 19.5 – VCE = 3 V, IC = 15 mA@ max. linearity operating point Gma – 19 – VCE = 4 V, IC = 40 mATransducer gain dB ZS = ZL = 50 Ω@ low noise operating point S21 – 14 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point S21 – 16.5 – VCE = 3 V, IC = 15 mA@ max. linearity operating point S21 – 17 – VCE = 4 V, IC = 40 mANoise figure dB ZS = ZSoptN

@ low noise operating point VCE = 3 V, IC = 4 mAMinimum noise figure NFmin – 1.1 –Associated gain Gass – 15 –@ recommended trade off oper. point VCE = 3 V, IC = 15 mAMinimum noise figure NFmin – 1.5 –Associated gain Gass – 17 –Linearity dBm ZS = ZL = 50 Ω@ recommended trade off oper. point VCE = 3 V, IC = 15 mA3rd order intercept point at output OIP3 – 24 –1 dB gain compression point at output OP1dB – 9 –@ max. linearity operating point VCE = 4 V, IC = 40 mA3rd order intercept point at output OIP3 – 28 –1 dB gain compression point at output OP1dB – 17 –




BFP420F




@ low noise operating point Gms – 16.5 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point Gma – 16.5 – VCE = 3 V, IC = 15 mA@ max. linearity operating point Gma – 16.5 – VCE = 4 V, IC = 40 mATransducer gain dB ZS = ZL = 50 Ω@ low noise operating point S21 – 12 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point S21 – 14.5 – VCE = 3 V, IC = 15 mA@ max. linearity operating point S21 – 15 – VCE = 4 V, IC = 40 mANoise figure dB ZS = ZSoptN

@ low noise operating point VCE = 3 V, IC = 4 mAMinimum noise figure NFmin – 1.2 –Associated gain Gass – 12.5 –@ recommended trade off oper. point VCE = 3 V, IC = 15 mAMinimum noise figure NFmin – 1.6 –Associated gain Gass – 15 –Linearity dBm ZS = ZL = 50 Ω@ recommended trade off oper. point VCE = 3 V, IC = 15 mA3rd order intercept point at output OIP3 – 24.5 –1 dB gain compression point at output OP1dB – 8.5 –@ max. linearity operating point VCE = 4 V, IC = 40 mA3rd order intercept point at output OIP3 – 28 –1 dB gain compression point at output OP1dB – 16.5 –



@ low noise operating point Gma – 11.5 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point Gma – 12.5 – VCE = 3 V, IC = 15 mA@ max. linearity operating point Gma – 13 – VCE = 4 V, IC = 40 mATransducer gain dB ZS = ZL = 50 Ω@ low noise operating point S21 – 9 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point S21 – 11 – VCE = 3 V, IC = 15 mA@ max. linearity operating point S21 – 11.5 – VCE = 4 V, IC = 40 mANoise figure dB ZS = ZSoptN

@ low noise operating point VCE = 3 V, IC = 4 mAMinimum noise figure NFmin – 1.6 –


BFP420F


Associated gain Gass – 10 –@ recommended trade off oper. point VCE = 3 V, IC = 15 mAMinimum noise figure NFmin – 1.8 –Associated gain Gass – 11.5 –Linearity dBm ZS = ZL = 50 Ω@ recommended trade off oper. point VCE = 3 V, IC = 15 mA3rd order intercept point at output OIP3 – 22 –1 dB gain compression point at output OP1dB – 8 –@ max. linearity operating point VCE = 4 V, IC = 40 mA3rd order intercept point at output OIP3 – 26 –1 dB gain compression point at output OP1dB – 17 –



@ low noise operating point Gma – 7.5 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point Gma – 8.5 – VCE = 3 V, IC = 15 mA@ max. linearity operating point Gma – 9 – VCE = 4 V, IC = 40 mATransducer gain dB ZS = ZL = 50 Ω@ low noise operating point S21 – 5.5 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point S21 – 7 – VCE = 3 V, IC = 15 mA@ max. linearity operating point S21 – 8 – VCE = 4 V, IC = 40 mANoise figure dB ZS = ZSoptN

@ low noise operating point VCE = 3 V, IC = 4 mAMinimum noise figure NFmin – 2.2 –Associated gain Gass – 5 –@ recommended trade off oper. point VCE = 3 V, IC = 15 mAMinimum noise figure NFmin – 2.3 –Associated gain Gass – 8 –Linearity dBm ZS = ZL = 50 Ω@ recommended trade off oper. point VCE = 3 V, IC = 15 mA3rd order intercept point at output OIP3 – 22 –1 dB gain compression point at output OP1dB – 8.5 –@ max. linearity operating point VCE = 4 V, IC = 40 mA3rd order intercept point at output OIP3 – 26 –1 dB gain compression point at output OP1dB – 17 –




BFP420F


Note:

1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 12. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all

measured results.3. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this

measurement is 50 Ω from 0.2 MHz to 12 GHz.


BFP420F


4.4 Characteristic DC Diagrams

Figure 3 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter

Figure 4 DC Current Gain hFE = f (IC), VCE = 3 V

0 1 2 3 4 5 60

5

10

15

20

25

30

35

40

45

50

55

60

65

IB = 25µA

IB = 75µA

IB = 125µA

IB = 175µA

IB = 225µA

IB = 275µA

IB = 325µA

IB = 375µA

IB = 425µA

IB = 475µA

IB = 525µA

IB = 575µA

IB = 625µA

IB = 675µA

IB = 725µA

VCE

[V]

I C [

mA

]

10−1

100

101

102

101

102

IC

[mA]

h FE


BFP420F


Figure 5 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 3 V

Figure 6 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 3 V

0.5 0.6 0.7 0.8 0.9 110

−5

10−4

10−3

10−2

10−1

100

101

102

VBE

[V]

I C [

mA

]

0.5 0.6 0.7 0.8 0.9 110

−7

10−6

10−5

10−4

10−3

10−2

10−1

100

VBE

[V]

I B [

mA

]


BFP420F


Figure 7 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 3 V

Figure 8 Collector Emitter Breakdown Voltage VCER = f (RBE), IC = 1 mA

0.3 0.5 0.7 0.9 1.1 1.3 1.510

−11

10−10

10−9

10−8

10−7

10−6

VEB

[V]

I B [

A]

104

105

106

107

5

5.5

6

6.5

7

7.5

8

RBE

[Ω]

VC

ER

[V

]

RBE

B

C

E


BFP420F


4.5 Characteristic AC Diagrams

Figure 9 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter

Figure 10 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters

0 10 20 30 40 50 60 700

2

4

6

8

10

12

14

16

18

20

22

24

26

28

3.00V

2.00V

1.00V

IC

[mA]

f T [GH

z]

4.00V

0 10 20 30 40 50 60−4−2

02468

1012141618202224262830

IC

[mA]

OIP

3 [dB

m]

3V, 900MHz4V, 900MHz3V, 1900MHz4V, 1900MHz


BFP420F


Figure 11 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz

Figure 12 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz

1213

1414

15

15

16

16

17

17

17

18

18

1819

19

19

19

2020

20

20

20

2121

21

21

21

2222

22

22

22

2323

23

23

23

2424

24

24

24

2525

25

25

25

26

2626

26

27

27

27

27

28

28

VCE

[V]

I C [

mA

]

1 1.5 2 2.5 3 3.5 45

10

15

20

25

30

35

40

45

50

55

60

0000 1111 2222

3

333

4

4

444

5

5

555

6

6

666 777

7

7

7

888

8

8

999

9

9

101010

10

10

111111

11

1212

12

12

1313

13

13

1414

14

1515

15

16

16

17

VCE

[V]

I C [

mA

]

1 1.5 2 2.5 3 3.5 45

10

15

20

25

30

35

40

45

50

55

60


BFP420F


Figure 13 Collector Base Capacitance CCB = f (VCB), f = 1 MHz

Figure 14 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 15 mA

0 0.5 1 1.5 2 2.5 3 3.5 40

0.06

0.12

0.18

0.24

0.3

VCB

[V]

CC

B [

pF]

0 1 2 3 4 5 60

5

10

15

20

25

30

35

40

f [GHz]

G [d

B]

Gms

Gma

|S21

|2


BFP420F


Figure 15 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz

Figure 16 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz

0 10 20 30 40 50 60 70 803

6

9

12

15

18

21

24

27

30

33

36

39

5.50GHz

3.50GHz

2.40GHz

1.90GHz

1.50GHz

0.90GHz

0.45GHz

0.15GHz

IC

[mA]

G [d

B]

0 1 2 3 4 5 63

6

9

12

15

18

21

24

27

30

33

36

39

5.50GHz

3.50GHz

2.40GHz

1.90GHz

1.50GHz

0.90GHz

0.45GHz

0.15GHz

VCE

[V]

G [d

B]


BFP420F


Figure 17 Input Matching S11 = f ( f ), VCE = 3 V, IC = 4 / 15 / 45 mA

Figure 18 Source Impedance for Minimum Noise Figure Zopt = f ( f ) , VCE = 3 V, IC = 4 / 15 mA

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

0.03 to 6 GHz

step: 1 GHz

4 mA

15 mA

40 mA

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

0.45GHz

0.9GHz

1.9GHz

2.4GHz

3.5GHz

Ic = 4.0mA

Ic = 15mA


BFP420F


Figure 19 Output Matching S22 = f ( f ), VCE = 3 V, IC = 4 / 15 / 45 mA

Figure 20 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 4 / 15 mA, ZS = Zopt

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

0.03 to 6 GHz

step: 1 GHz

4 mA

15 mA

40 mA

0 0.5 1 1.5 2 2.5 3 3.5 40

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

f [GHz]

NFm

in [d

B]

IC

= 4mA

IC

= 16mA


BFP420F


Figure 21 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz

Figure 22 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz

Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C.

0 5 10 15 20 25 30 350.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

Ic [mA]

NFm

in [d

B]

f = 0.45GHz

f = 0.9GHz

f = 1.9GHz

f = 2.4GHz

f = 3.5GHz

0 5 10 15 20 25 30 350.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

3.2

3.4

Ic [mA]

NF5

0 [d

B]

f = 0.45GHz

f = 0.9GHz

f = 1.9GHz

f = 2.4GHz

f = 3.5GHz


BFP420F

Simulation Data


5 Simulation DataFor the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please consult our website and download the latest versions before actually starting your design.You find the BFP420F SPICE GP model on the official homepage of Infineon RF transistors in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device.The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP420F SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted.

BFP420F

Package Information TSFP-4


6 Package Information TSFP-4

Figure 23 Package Outline

Figure 24 Package Foot Print

Figure 25 Marking Example (Marking BFP420F: AMs)

Figure 26 Tape Dimensions

±0.050.2

±0.051.4

1 2

±0.0

50.

8

1.2

±0.0

5

±0.040.55

±0.0

50.

2

±0.050.15±0.050.2

0.5±0.05

0.5±0.05

4 3

TSFP-4-1, -2-PO V04

0.35

0.45

0.9

0.5 0.5

TSFP-4-1, -2-FP V04

MarkingPin 1

Manufacturer

XYsMarkingPin 1

Manufacturer

XYs

TSFP-4-1, -2-TP V05

4 0.2

1.4

8

Pin 1 1.55 0.7

Published by Infineon Technologies AG

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http://www.infineon.com

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