blocking diode - schottky style diode nsr1020mw2t1-d
DESCRIPTION
Diode TypesTRANSCRIPT
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© Semiconductor Components Industries, LLC, 2010
September, 2010 − Rev. 1Publication Order Number:
NSR1020MW2T1/D
NSR1020MW2T1G
Schottky Barrier DiodesThis Schottky Barrier Diode in the SOD−323 package offers
extremely low Vf performance. The low forward voltage makes themcapable of handling high current in a very small package. Theresulting device is ideally suited for application as a blocking diode incharging applications or as part of discrete buck converter or discreteboost converter. As part of a buck conversion circuit, a boostconversion circuit or a charging circuit the low Vf drop of the Schottkyimproves the efficiency of the overall device by consuming less powerin the forward mode.
Features• Low Forward Voltage − 0.24 Volts (Typ) @ IF = 10 mAdc
• High Current Capability
• ESD Rating − Human Body Model: CLASS 3B − Machine Model: C
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage VR 20 Vdc
Peak Revese Voltage VRM 30 V
Forward Power Dissipation@ TA = 25°CDerate above 25°C
PF2002.0
mWmW/°C
Forward Current (DC)Continuous
IF1
A
Forward Currentt = 8.3 ms Half Sinewave
IF5
A
Junction Temperature TJ 125 Max °C
Storage Temperature Range Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.
RE = Specific Device CodeM = Date Code� = Pb−Free Package(Note: Microdot may be in either location)
MARKINGDIAGRAM
HIGH CURRENTSCHOTTKY BARRIER DIODE
1CATHODE
2ANODE
Device Package Shipping†
ORDERING INFORMATION
SOD−323CASE 477STYLE 1
http://onsemi.com
†For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011/D.
NSR1020MW2T1G SOD−323(Pb−Free)
3000/Tape & Reel
NSR1020MW2T3G SOD−323(Pb−Free)
10,000/Tape & Reel
1
2
RE M�
�
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NSR1020MW2T1G
http://onsemi.com2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Total Capacitance (VR = 5.0 V, f = 1.0 MHz) CT − 25 29 pF
Reverse Leakage (VR = 15 V) IR − − 40 �Adc
Forward Voltage (IF = 1 mAdc) VF − − 0.20 Vdc
Forward Voltage (IF = 10 mAdc) VF − − 0.26 Vdc
Forward Voltage (IF = 100 mAdc) VF − − 0.33 Vdc
Forward Voltage (IF = 500 mAdc) VF − − 0.44 Vdc
Forward Voltage (IF = 1000 mAdc) VF − − 0.54 Vdc
1
10
100
1000
0.0 0.1 0.2 0.3 0.4 0.5 0.6
VF, FORWARD VOLTAGE (V)
IF, F
OR
WA
RD
CU
RR
EN
T (
mA
)
Figure 1. Forward Voltage
1
10
100
1000
10000
0 5 10 15 20 25
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
IR, R
EV
ER
SE
CU
RR
EN
T (�A
)
150°C
85°C
−45°C
−55°C
25°C
150°C
85°C
25°C
125°C
0
20
40
60
80
100
120
140
0 5 10 15 20
VR, REVERSE VOLTAGE (V)
CT,
CA
PA
CIT
AN
CE
(pF
)
Figure 3. Total Capacitance
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NSR1020MW2T1G
http://onsemi.com3
PACKAGE DIMENSIONS
SOD−323CASE 477−02
ISSUE H
STYLE 1:PIN 1. CATHODE
2. ANODE
1.600.063
0.630.025
0.830.033
2.850.112
*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.2. CONTROLLING DIMENSION: MILLIMETERS.3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.5. DIMENSION L IS MEASURED FROM END OF RADIUS.
NOTE 3
D
1 2b E
A3
A1
A
C NOTE 5L
HE
DIM MIN NOM MAXMILLIMETERS
A 0.80 0.90 1.00A1 0.00 0.05 0.10A3 0.15 REFb 0.25 0.32 0.4C 0.089 0.12 0.177D 1.60 1.70 1.80E 1.15 1.25 1.35
0.082.30 2.50 2.70
L
0.031 0.035 0.0400.000 0.002 0.004
0.006 REF0.010 0.012 0.0160.003 0.005 0.0070.062 0.066 0.0700.045 0.049 0.0530.0030.090 0.098 0.105
MIN NOM MAXINCHES
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NSR1020MW2T1/D
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