bm2p016t-evk-004 user's guide · user’s guide ac/dc converter isolation fly-back converter...

AC/DC Converter Isolation Fly-back Converter PWM method

48 W 24 V BM2P016T Reference Board

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Please note that this document covers only the BM2P016T evaluation board (BM2P016T-EVK-004) and its functions. For additional information, please refer to the datasheet.

To ensure safe operation, please carefully read all precautions before handling the evaluation board

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Potentially lethal voltages may be generated. Therefore, please make sure to read and observe all safety precautions described in the red box below.

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© 2019 ROHM Co., Ltd. No. 62UG006E Rev.0012019.7

User’s Guide

AC/DC Converter Isolation Fly-back Converter PWM method Output 48 W 24 V BM2P016T Reference Board BM2P016T-EVK-004

The BM2P016T-EVK-004 evaluation board outputs a 24 V voltage from an input of 90 Vac to 264 Vac. The output current provides up

to 2.0 A. The BM2P016T PWM type DC / DC converter IC with 650 V MOSFET is used. The BM2P016T contributes to low power

consumption by incorporating a 650 V withstand voltage startup circuit. Using current mode control, cycle-by-cycle current limiting

provides excellent performance in bandwidth and transient response. The switching frequency is fixed at 65 kHz. At light loads,

frequency reduction achieves high efficiency. Built-in frequency hopping function contributes to low EMI. The low on-resistance 1.4

· 650 V withstand voltage MOSFET is built in, contributing to low power consumption and easy design.

The optimized EMI design complies with CISPR 22 Class B for noise terminal voltage / radiation emission testing.

Figure 1. BM2P016T-EVK-004

Electronics Characteristics Not guarantee the characteristics, is representative value. Unless otherwise noted: VIN = 230 Vac, IOUT = 1.5 A, Ta = 25 °C

(NOTE1) Please adjust operating time, within any parts surface temperature under 105 °C

(NOTE2) Not include spike noise

Parameter Min Typ Max Units Conditions

Input Voltage Range 90 230 264 V

Input Frequency 47 50/60 63 Hz

Output Voltage 22.8 24.0 25.2 V

Maximum Output Power - - 48 W IOUT = 2 A

Output Current Range (NOTE1) 0.0 1.5 2.0 A

Stand-by Power - 280 - mW IOUT = 0 A

Efficiency 83.0 86.4 - % IOUT = 2 A

Output Ripple Voltage (NOTE2) - 180 - mVpp

Operating Temperature Range -10 +25 +65 °C


User’s Guide

Operation Procedure 1. Operation Equipment

(1) AC Power supply 90 ~ 264 Vac, over 50W

(2) Electronic Load capacity 2.0 A

(3) Multi meter

2. Connect method

(1) AC power supply presetting range 90~264 Vac, Output switch is off.

(2) Load setting under 2 A. Load switch is off.

(3) AC power supply N terminal connect to the board AC (N) of CN1-2, and L terminal connect to AC (L) of CN1-3.

(4) Load + terminal connect to VOUT of CN2-2, GND terminal connect to GND of CN2-1

(5) AC power meter connect between AC power supply and board.

(6) Output test equipment connects to output terminal

(7) AC power supply switch ON.

(8) Check that output voltage is 24 V

(9) Electronic load switch ON

(10) Check output voltage drop by load connect wire resistance

Figure 2. Connection Circuit

Deleting Maximum Output Power Po of this reference board is 48 W. The derating curve is shown on the below. If ambient

temperature is over 40°C, Please adjust load continu ous time by over 105 °C of any parts surface temper ature.

06

1218243036424854

-25 0 25 50 75 100

Out

put P

ower

Po

[W]

Ambient Temparature Ta [ C]

V

CN2-1 GNDCN2-2 VOUT

CN1-3 AC(L)

CN1-2 AC(N)


User’s Guide

Application Circuit

BM2P016T-EVK-004 is a fly-back type circuit method, and BM2P016T is used for IC.

The BM2P016T is built-in a high withstand voltage VDSS: 650 V and a low on resistance RDS (ON): 1.4 Super-Junction

MOSFET, contributing to energy saving. The voltage of the output (VOUT) is monitored by a feedback circuit and fed back to

the FB terminal of IC1 through a photo coupler. The FADJ pin of IC1 can be used to fix the burst frequency at the burst mode

under light load, to prevent the noise at the burst mode.

At startup, the VCC voltage is raised by supplying VIN to CVCC through the startup circuit (Starter). When the VCC voltage

exceeds the UVLO release voltage 13.5V typ., The IC operation starts. When the IC operates, the start-up circuit is turned off

and the supply from the DRAIN pin is cut off, contributing to the reduction of standby power.

Figure 4. BM2P016T-EVK-004 Application Circuit

SnubberCircuit

Feed-backCircuit

InputFilter

650VMOSFET

GateDriver

GateClamper

Controller

DRAIN

SOURCEGNDFADJFB

VCC

CIN

VIN

CVCC

Starter


User’s Guide

BM2SCQ123T Overview

Feature PWM frequency : 65 kHz

PWM current mode method

Frequency hopping function

Burst operation at light load

Frequency reduction function

Built-in 650V start circuit

Built-in 650V switching MOSFET

VCC pin under voltage protection

VCC pin over voltage protection

SOURCE pin Open protection

SOURCE pin Short protection

SOURCE pin Leading-Edge-Blanking function

Per-cycle over current protection circuit

AC Correction function of over current limiter

Soft Start Function

Secondary over current protection circuit

Key specifications Operation Voltage Range: VCC: 8.9 V ~ 26.0 V

DRAIN: 650 V(Max)

Normal Operating Current: 0.95 mA(Typ)

Burst Operating Current: 0.30 mA(Typ)

Oscillation Frequency: 65 kHz(Typ)

Operating Temperature: -40 °C ~ +105 °C

MOSFET Ron: 1.4 (Typ)

ApplicationAC adapters and household appliance (vacuum cleaners,

humidifiers, air cleaners, air conditioners, IH cooking heaters,

rice cookers, etc.)

W(Typ) x D(Typ) x H(Max)

TO220-7M 10.0 mm x 4.6 mm x 25.4 mm

Figure 5. TO220-7M Package

(*) Product structure: Monolithic integrated circuit mainly made of silicon. No radiation resistant design

(*) Exceeding the absolute maximum ratings, such as applied voltage and operating temperature range, may lead to

deterioration or destruction. Also, the short mode or open mode cannot assume the destruction state. If a special

mode that exceeds the absolute maximum rating is assumed, Please consider physical safety measures such as

fuses.

Table 1. BM2P016T PIN description

No. Name I/O Function ESD DiodeVCC GND

1 DRAIN I/O MOSFET DRAIN pin - - 2 SOURCE I/O MOSFET SOURCE pin 3 N.C. - Non Connection - - 4 FADJ I MAX burst frequency setting pin 5 GND I/O GND pin - 6 FB I Feed-back signal input pin 7 VCC I Power supply input pin -


User’s Guide

Design Overview

1 Important parameter

VIN : Input Voltage Range AC 90 V ~ 264 Vac (DC 100 V ~ 380 V) VOUT : Output Voltage DC 24 V IOUT(typ) : Constant Output Current 1.5 A IOUT(max) : Maximum Output Current 2.0 A fSW : Max Switching Frequency min:61 kHz, typ:65 kHz, max:69 kHz VSOURCE : Over Current Detection Voltage min:0.375 V, typ:0.400 V, max:0.425 V

2 Transformer Design

2.1 Setting fly-back voltage VOR

Determine the fly-back voltage VOR and find the turns ratio Np: Ns, Duty ratio. With VIN (min) = 100 V and VF = 1.5 V, target

VOR to about 100 V. In this case, the turns ratio Np: Ns = 4.38 determined later.

Figure 6. MOSFET Drain Waveform

Set VOR so that Duty is 0.5 or less in consideration of MOSFET loss and so on.

2.2 Selection of operation mode

The PWM driven Fly-back switching regulator transfers power from the primary side to the secondary side using a

transformer.

There are three types of transformer operation modes:

CCM (Continuous Current Mode) : The primary side switching element is turned on before the charging

current of the secondary side coil is completely discharged. Since the coil current is continuous.

BCM (Boundary Current Mode) : The switching element on the primary side is turned on at the same time

the discharge of the coil on the secondary side is completed.

DCM (Dis-continuous Current Mode) : The primary side switching element turns on after the secondary side coil

is completely discharged. It is called current discontinuous mode because the coil current is not continuous.

BM2P016 works properly in either CCM or DCM mode. In this design, the transformer is designed to be BCM at a load

current of 1.5 A with an input voltage of DC 260 V (AC conversion: 185 Vac).

Figure 7. Switching Waveform (MOSFET VDS, IP , IS)

IS

IP

VDS

IS

IP

VDS

IS

IP

VDSBCMDCM CCM


User’s Guide

2 Transformer design -Continued

2.3 Calculation of inductance value

Selecting the optimum inductor value will improve power supply efficiency. The figure below shows the peak current IPPK of

the transformer and the input voltage / output current characteristics of the DC current IDC at switching ON. Increasing the

transformer inductance value reduces the transformer peak current. Low peak current offers benefits such as reduced power

dissipation and smaller components. However, when the input voltage is low or the output current is large, the continuous

mode CCM is set, and a DC current IDC is generated. When DC current is generated, switching loss increases, and

disadvantages such as deterioration of power supply efficiency and generation of switching noise increase.

Figure 8. Current of Transfer Figure 9. Relation of VIN vs. Current Figure 10. Relation of VOUT v. Current

Under the condition that the input voltage VIN = 260 Vdc input, the load current IOUT(BCM) = 1.5 A, and the BCM when the

oscillation frequency is 65 kHz, find the primary winding inductance LP and secondary winding inductance LS.

The secondary side inductance LS in the case of becoming BCM is calculated.

This EVK, LP = 1200 H, LS = 62.69 H. Calculate the maximum current IPPK on the primary side and the maximum current

ISPK on the secondary side.


User’s Guide

2.3 Calculation of inductance value -Continued

2.4 Determination of transformer size

From Po (max) = 48 W, the core size of the transformer selects EER28.

Table 2. Output power and transfer core

Output Power Po(W) Core size Core Cross sectional area Ae

mm2

~30 EI25/EE25 41 ~50 EFD30 68 ~60 EI28/EE28/EER28 86 ~80 EI33/EER35 107

(*) The above values are guidelines. Please check with the transformer manufacturer etc. for details.

2.5 Calculation of primary winding NP

The maximum value of the magnetic flux density B (T) of a general ferrite core is 0.4 T @ 100 ° C, so Bs at = 0.35 T.

This EVK, the core cross section Ae = 86.3 mm2 is selected.

The primary winding number NP should be 68 turns or more. In this EVK, NP = 105 turns so that it becomes tightly wound

from the bobbin size of the transformer.

2.6 Calculation of secondary winding NS

The secondary winding number NS is expressed by the following formula.

This EVK, we have NS = 24 turns. Also, in order to reduce the leakage inductance, 24 turns are selected from the size of the

transformer bobbin so as to be compact winding.

2.7 Calculation of VCC winding ND

Assuming VCC = 17 V and VF_VCC = 1 V, ND is expressed by the following formula.


User’s Guide

2.7 Calculation of VCC winding ND –Continued

It is assumed that ND = 15 turns. When driving a MOSFET, set the VCC to 15 V or more because it is necessary to control

the Gate voltage. Thun, the transformer specification is as follows.

Table 3. Transformer specification (Reference) Core EER28 compatible

LP 1200 μH NP 105 turns NS 24 turns ND 15 turns

2.8 Transformer design example

Manufacture: Alfatrans Co., LTD

541-0059 1-7-2 bakurou-cho, chu-o ku, osaka http://www.alphatrans.jp/

Product: XE2235Y AlphaTrans Corp.

Bobin: FX-2828 10PIN

Core: EER28/28

Figure 11. Connection Diagram Figure 12. Winding structure diagram

Table 4. Alpha Trans XE2236Y Winding Specification

NO. WINDING TERMINAL WIRE SIZE TURNS TAPE LAYERS

WINDINGMETHOD NOTESTART FINISH

1 NP1 3 2 2UEW / 0.40 * 1 53 2 COMPACT2 NS1 9 6 2UEW / 0.40 * 1 24 2 COMPACT3 ND 4 5 2UEW / 0.30 * 2 15 2 COMPACT4 NS2 8 7 2UEW / 0.40 * 1 24 2 COMPACT5 NP2 2 1 2UEW / 0.40 * 1 52 2 COMPACT

Inductance (LP) 1200 H±10 % (100 kHz,1 V)

Leakage Inductance 50 H MAX

Withstand Voltage Pri – Sec AC1500 V

Pri - Core AC1500 V

Sec – Core AC500 V

Insulation resistance 100 M over (DC500 V)


User’s Guide

IP

VS

tDELAY

VSOURCEVs : 20 mV/μs

IPPKIPPK

t

t

tONtON

Design Overview – Continued

3 Main parts selection

3.1 Input Capacitor : C6

The input capacitor value is selected based on Table 5 as a guide. Select according to specifications such as holding time.

Table 5. Input capacitor selection

Vac Cin (μF 85 ~ 264 2 x PIN (W) 180 ~ 264 1 x PIN (W)

A capacity equivalent to 48 W/0.84 x 2 = 114 F is required as POUT = 48 W, and the power supply efficiency is 84%.

This time, it is 100 F considering the withstand voltage and ripple current of the capacitor. The withstand voltage of the

capacitor needs more than the maximum input voltage. 450 V withstand voltage is selected for up to 380 V.

3.2 Resistor of current detection : Rs (R4, R5)

Set the overload protection point of the output by limiting the current flowing to the primary side. The peak current IPPK of the

primary side at the time of over current detection is calculated.

Calculate the peak current ISSK on the secondary side at the time of over current detection. The output current in continuous

mode is expressed by the following equation, and the load current at overcurrent detection is IOUT (LIM).

Calculate on duty and off time tOFF.

Figure 13. Current detection voltage

The secondary peak current ISSK is expressed by the following equation. The load current at the time of over-current

detection is IOUT (LIM): 2.4 A with a 20% margin from the maximum load current IOUT (MAX): 2 A.


User’s Guide

3.2 Resistor of current detection – Continued

The primary peak current IPPK is expressed by the following formula.

The primary current is voltage-converted by the sense resistor RS, and switching is turned off by exceeding the overcurrent

detection voltage. It becomes peak current IPPK after delay time tDELAY from over current detection. The peak current IPPK ' at

the time of detection is calculated. tDELAY is 0.1 s.

Calculate the on time tON and the over current detection time tON '.

The over-current protection has an AC voltage correction function to compensate for the over-current protection point shift

due to the difference in input voltage. Overcurrent detection voltage at 0 s VSOURCE: 400 mV, AC voltage correction VS: 20

mV / s. The current IPPK' at the time of over current detection is as follows.

The sense resistance RS is calculated by the following formula.

The sense resistance RS should be 0.376 or less.

This EVK, the sense resistances (R4, R5) are 0.56 in parallel and RS is 0.28 .

Also, loss PR4 of the current detection resistor is expressed by the following formula.

The MCR18 Series with a rated power of 0.25 W was selected.


User’s Guide

3. Main parts selection - Continued

3.6 Diode for VCC : D2

For the VCC diode, a high speed diode is recommended. When VF = 1 V, the

reverse voltage VD applied to the VCC diode is expressed by the following formula.

This IC has VCC OVP function and VCC OVP (min) = 29.0 V.

Make sure that the reverse voltage of the diode does not exceed the VD of

the diode used even if the VCC voltage rises to VCC OVP.

Figure 14. IC peripheral circuit

Select the 84.3 V / 0.7 120 V -> 400 V product taking into consideration the margin.

(Example ROHM RRE02VSM4S 400 V 0.2 A)

3.7 Surge voltage limiting resistor for VCC winding : R6

The transformer's leakage inductance (Lleak) generates a large surge voltage (spike noise) the moment the MOSFET is

turned off. This surge voltage may be induced in the VCC winding, and the VCC voltage may rise to affect the VCC over

voltage protection of the IC.Insert a limiting resistor R6 (about 5 to 22 ) to reduce the surge voltage induced in the VCC

winding.

Regarding the rise of the VCC voltage, check it in the state of being incorporated in the product. This EVK, 10 was

selected.

3.8 Capacitor for VCC : C10

The VCC capacitor CVCC is required to stabilize the VCC voltage of the IC. The recommended capacity is 4.7 F to 22 F.

Figure 15 shows the relationship between start-up time and VCC capacitor value. This time, 10 F / 35 V was selected.

Figure 15. Start-up Time(Reference

0.0

0.1

0.1

0.2

0.2

0.3

0 20 40 60

Star

t up

Tim

e [μ

sec]

VCC Capacitor [μF]

DR

AIN

SOUR

CE

1 2

N.C

3

FAD

J

4

GN

D

5

FB

6

VCC

7


User’s Guide

3. Main parts selection – Continued

3.8 Capacitor for FB terminal : C9

C9 is a stabilization capacitor for the FB pin (1000 pF to 0.01 μF is recommended).

3.9 Snubber circuit : C11, R7, R8, D1

The transformer leakage inductance (LLEAK) generates a large surge voltage (spike noise) the moment the MOSFET is

turned off. This surge voltage is applied between the drain and source of the MOSFET, and in the worst case, the MOSFET

may be destroyed. An RCD snubber circuit is recommended to suppress this surge voltage.

Figure 16. MOSFET Drain Voltage waveform Figure 17. Snubber cuicuit

i. Determination of clamp voltage (VCLAMP) and clamp Ripple voltage (VRIPPLE)

The clamp voltage is determined by taking into consideration the margin from the breakdown voltage of the MOSFET.

Set the clamp ripple voltage (VRIPPLE) to about 50 V.

ii. Determination of snubber resistance: R8

Then, LLEAK is 50 H from the specification of the transformer.

The primary side peak current when POUT = 48 W, VIN (max) = 380 V: IPPK is calculated from the following formula.

First, calculate the on duty and off time tOFF.

DR

AIN

SOUR

CE

1 2

N.C

3

FAD

J

4

GN

D

5

FB

6

VCC

7


User’s Guide

3.9 Snubber circuit - Continued

The secondary peak current ISSK is expressed by the following formula. The load current at the time of overcurrent

detection is the maximum load current IOUT (MAX): 2 A.

The primary peak current IPPK is expressed by the following formula.

Thus, the snubber resistance: R8 is expressed by the following formula.

In fact, due to the influence of the MOSFET, not according to this equation, the snubber resistance of 47 k is selected

from actual device evaluation. Snubber resistance loss: P_R8 is expressed by the following formula.

Consider a margin and set it to 2 W or more.

iii. Determination of snubber capacitor: C10

The snubber capacitor is selected to meet the following conditions.

The snubber capacitor is 10 nF. The voltage applied to C10 is 540 V-380 V = 160 V. considering to the margin and make

it 200 V or more. This time, the 630 V withstand voltage is selected.

iv. Determination of snubber capacitor: D1

Use a fast recovery diode for the snubber diode. Make the breakdown voltage higher than the Vds (max) of the

MOSFET. Surge voltage is affected by the pattern of the board as well as the transformer's leakage inductance. Check

the Vds voltage with the product incorporated, and adjust the snubber circuit as required.


User’s Guide

3.10 Diode for output rectification : D4

Use a high speed diode (Schottky barrier diode, fast recovery diode) as the output rectification diode. Assuming that the

reverse voltage applied to the output diode is VF = 1.5 V and VOUT = 24.0 V, the reverse voltage VD applied to the diode of D4

is expressed by the following formula.

Select a 200 V product considering the margin.

The current IS (rms) flowing through the output diode is expressed by the following equation.

This EVK, 20 A, 300 V, TO-220 package products was selected. (Example: ROHM RF2001T3DNZ) It is recommended to

use voltage margin less than 70% and current less than 50%.Check the temperature rise with the product incorporated in the

product, re-examine the parts if necessary, and dissipate the heat from the heat sink.

3.11 Capacitor for output : C12,C13,C14

The output capacitor is determined by the Peak-to-Peak ripple voltage ( Vpp) and the ripple current that are acceptable at

the output load.When the MOSFET is on, the output diode is off. At this time, current is supplied from the output capacitor to

the load. When the MOSFET is off, the output diode is on, charging the output capacitor and also providing the load current.

Assuming that VPP = 200 mV under the condition (VIN = 100 V, POUT = 48 W) calculated by the transformer calculation,

The impedance is specified at 100 kHz for general electrolytic capacitors for

switching power supplies (low impedance products), so convert to 65 kHz.

Also, the ripple current IC (rms) to the capacitor is expressed by the following formula. Figure 18 Output peripheral

circuit

The withstand voltage of the capacitor should be 80% derating as a guide to the output voltage. 24 V / 0.8 = 30 V or more.

This EVK time, low impedance type 35 V, 1000 F for switching power supply, rated ripple current 1.89A : UPA1V102MPD:

Nichicon. Check the actual Ripple voltage and Ripple current on the actual device.


User’s Guide

3. Main parts selection - Continued

3.12 Output voltage setting resistor: R10,R11,R12

The output voltage is set by the following formula

Set the feedback current IBIAS flowing to R12 at 0.1 mA to 1.0 mA.

Assuming that IBIAS = 0.25 mA, and the reference voltage

VREF = 2.485 V of the shunt regulator IC2, the resistance value of R12 is

Figure 19. Feed-back circuit

This EVK, select R12: 10 k .

The combined resistance of the feedback resistors (R10 + R11 + R12) is

This EVK, R10 = 82 k and R11 = 4.7 k are selected. The theoretical value of the output voltage is as follows.

3.13 Control circuit adjustment: R13,R14,R15,C16

R14 is the dark current setting resistor for shunt regulator IC2. The current value Imin for stable operation of the shunt

regulator is 1.2 mA according to the data sheet of the IC. This current is the combined current of R13 and the photo

coupler’s IF. Since the voltage applied to R14 is the VF of the photo coupler, assuming that the VF of the photo coupler is 1.1

V,

This EVK, R14 = 1.0 k is selected.

R13 is a control circuit current limiting resistor. Adjust with 300 to 2.2 k .

This EVK, R13 = 1.0 k is selected.

R15 and C16 are phase compensation circuits. Adjust with the actual board as R15 = 1 k to 30 k , C16 = 0.1 F or so.


User’s Guide

Design Overview – Continued

4 EMI measures

Check the following as EMI measures.

(*)The constant is a reference value. Adjust by the influence of noise.

Input filter Two common mode filters are used. The LF1 is used for the low frequency range, and the LF2 is used for the high frequency

range.

Figure 20. Input filter circuit

Capacitor between primary and secondary side (C4 : Y-Cap 2200 pF around

RC snubber circuit of secondary side rectification diode An RC snubber circuit is added as a measure against radiated emissions.

Figure 21. RC snubber circuit of secondary side rectification diode


User’s Guide

Performance Data

Figure 22. Load Regulation (IOUT vs VOUT) Figure 23. Load Regulation (IOUT vs Efficiency)

Table 6-1. Load Regulation (VIN=100 Vac) Table 6-2. Load Regulation (VIN=230 Vac) IOUT VOUT Efficiency IOUT VOUT Efficiency

0.5 A 23.695 V 84.76 % 0.5 A 23.693 V 82.73 % 1.0 A 23.690 V 85.68 % 1.0 A 23.687 V 85.48 % 1.5 A 23.684 V 85.94 % 1.5 A 23.680 V 86.96 % 2.0 A 23.679 V 85.04 % 2.0 A 23.675 V 86.33 %

Figure 24. Load Regulation (IOUT vs PLOSS) Figure 25. Load Regulation (IOUT vs PLOSS)

21.6

22.0

22.4

22.8

23.2

23.6

24.0

24.4

24.8

25.2

25.6

26.0

26.4

0 1000 2000 3000 4000

Out

put V

olta

ge [V

]

Output Current [mA]

- VIN= 90 Vac- VIN=115 Vac- VIN=230 Vac- VIN=264 Vac

0

10

20

30

40

50

60

70

80

90

100

10 100 1000Ef

ficie

ncy

[%]

Output Current [mA]


0

1

2

3

4

5

6

7

8

9

10

0 500 1000 1500 2000

Pow

er L

oss

[W]

Output Current [mA]


0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1 10 100

Pow

er L

oss

[W]

Output Current [mA]



User’s Guide

Performance Data – Continued

Table 7-1. Load Regulation: VIN=90 Vac Table 7-2. Load Regulation: VIN=100 Vac



User’s Guide



Figure 26. Line Regulation (VIN vs VOUT) Figure 27. Line Regulation (VIN vs Efficiency)

21.6

22.0

22.4

22.8

23.2

23.6

24.0

24.4

24.8

25.2

25.6

26.0

26.4

80 100 120 140 160 180 200 220 240 260 280

Out

put V

olta

ge [V

]

Input Voltage [Vac]

- IOUT= 10 mA- IOUT= 100 mA- IOUT=1500 mA- IOUT=2000 mA

0

10

20

30

40

50

60

70

80

90

100

80 100 120 140 160 180 200 220 240 260 280

Effic

ienc

y [%

]

Input Voltage [Vac]

- IOUT= 10 mA- IOUT= 100 mA- IOUT=1500 mA- IOUT=2000 mA


User’s Guide


Figure 28. Switching Frequency (IOUT vs fSW)

Figure 29. Transfer Primary Peak Current (IOUT vs IPPK) Figure 30. Transfer Secondary Peak Current (IOUT vs ISPK)

0

10

20

30

40

50

60

70

0 500 1000 1500 2000

Switc

hing

Fre

quen

cy [k

Hz]

Output Current [mA]

- VIN=100 Vac- VIN=230 Vac

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0 500 1000 1500 2000

Tran

sfer

Prim

ary

Peak

Cur

rent

[A]

Output Current [mA]


0

1

2

3

4

5

6

0 500 1000 1500 2000Tran

sfer

Sec

onda

ry P

eak

Cur

rent

[A]

Output Current [mA]



User’s Guide

Operation Waveform

Figure 31. MOSFET VIN = 90 Vac, IOUT = 2.0 A Figure 32. Diode VIN = 90 Vac, IOUT=2.0 A

Figure 33. MOSFET VIN = 264 Vac, IOUT = 2.0 A Figure 34. Diode VIN = 264 Vac, IOUT = 2.0 A

Figure 35. MOSFET VIN = 264 Vac, Output Short Figure 36. Diode VIN = 264 Vac, Output Short

MOSFET VDS

MOSFET IDrainDiode IF

Diode VAnode-Cathode

Diode IF

MOSFET VDS

MOSFET IDrain

Diode IF

Diode VAnode-CathodeMOSFET VDS

MOSFET IDrain


User’s Guide

Power On

Figure 37. VIN = 115 Vac, IOUT = 2.0 A Figure 38. VIN = 230 Vac, IOUT = 2.0 A

Dynamic Response

Figure 39. VIN = 115 Vac, IOUT = 10 mA 2.0 A Figure 40. VIN = 115 Vac, IOUT = 2.0 A 10 mA

Figure 41. VIN = 230 Vac, IOUT = 10 mA 2.0 A Figure 42. VIN = 230 Vac, IOUT = 2.0 A 10 mA

IOUT

VOUT

VIN

IIN

IOUT

VOUT

VIN

IIN

VOUT

IOUT

VOUT

IOUT

VOUT

IOUT

VOUT

IOUT


User’s Guide

Output Ripple Voltage

Figure 43. VIN = 115 Vdc, IOUT = 10 mA Figure 44. VIN = 230 Vac, IOUT = 10 mA



VOUT VOUT

VOUT VOUT

VOUTVOUT

Ripple Voltage: 162 mVpp Ripple Voltage: 150 mVpp

Ripple Voltage: 26 mVppRipple Voltage: 20 mVpp

Ripple Voltage: 200 mVpp Ripple Voltage: 178 mVpp


User’s Guide

Parts surface temperature

Table 8. Parts surface temperature Ta = 25 °C, m easured 30minites after startup

Part Condition

VIN=90 Vac, IOUT=1.5 A




LF1 61.9 °C 72.1 °C 37.4 °C 39.7 °C DB1 65.0 °C 76.2 °C 43.0 °C 45.8 °C IC1 60.1 °C 65.5 °C 51.1 °C 64.8 °C T1 78.3 °C 92.2 °C 76.1 °C 78.5 °C R8 85.3 °C 99.1 °C 83.7 °C 87.2 °C D4 60.7 °C 71.0 °C 61.2 °C 65.7 °C

Figure 49. Thermal Image Figure 50. Thermal Image

VIN: 90 Vac, IOUT:1.5 A VIN:264 Vac, IOUT:1.5 A

LF1 61.9 °C

T1 78.3 °C

IC1 60.1 °C

DB1 65.0 °C

D4 60.7 °C LF1

37.4 °C

T1 76.1 °C

IC1 51.1 °C

DB1 43.0 °C

D4 61.2 °C


User’s Guide

EMI

Conducted Emission

QP margine : 7.4 dB QP margine : 7.6 dB

AVE margine : 9.1 dB AVE margine : 9.4 dB

Figure 51. VIN: 110 Vac / 60 Hz, IOUT:2 A Figure 52. VIN: 230 Vac / 50 Hz, IOUT:2 A

Radiated Emission

QP margine : 4.0 dB QP margine : 3.1 dB

Figure 53. VIN: 110 Vac / 60 Hz, IOUT:2 A Figure 54. VIN: 230 Vac / 50 Hz, IOUT:2 A


User’s Guide

Schematics

VIN = 90 ~ 264 Vdc, VOUT = 24 V

Figure 55. BM2P016T-EVK-004 Schematics

DR

AIN

SOUR

CE

1 2

N.C

3

FAD

J

4

GN

D

5

FB

6

VCC

7


User’s Guide

Bill of Materials Table 9. BoM of BM2P016T-EVK-004


User’s Guide

PCB Size : 55 mm x 105 mm

Figure 56. Top Layout (Top view)

Figure 57. Bottom Layout (Top view)

Notice

ROHM Customer Support System http://www.rohm.com/contact/

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.

No t e s

The information contained herein is subject to change without notice.

Before you use our Products, please contact our sales representative and verify the latest specifica-tions :

Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to various factors.Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.

Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.

The Products specified in this document are not designed to be radiation tolerant.

For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems.

Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.

ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.

ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.

Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.

When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.

This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.

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