chapter 3 transmission lines and waveguides
TRANSCRIPT
微波電路講義3-1
Chapter 3 Transmission Lines and Waveguides3.1 General solutions for TEM, TE and TM waves
procedures, ad
3.5 Coaxial line (TEM line)
TEM mode, higher order mode effect
3.7 Stripline (TEM line)
conformal mapping solution, electrostatic solution
3.8 Microstrip (quasi-TEM line)
eeff concept, conformal mapping solution, electrostatic
solution
3.11 Summary of transmission lines and waveguides
微波電路講義3-2
3.1 General solutions for TEM, TE and TM waves
• Procedure to analyze a TEM (Ez, Hz=0) line
• Procedure to analyze a TE (Ez=0) or TM (Hz=0) line
2
2
1 21
1) solve , from Laplace s equation , 0
2) apply B.C. x,y
3) , , , ,
1ˆ , , , , ,
4)
t
j z
t
j zxTEM
TEM y
(x y) ' (x y)
( )
e(x y) (x, y) E (x y z) e(x y)e
Eh(x, y) z e(x y) Z H (x y z) h(x y)e
Z H
V E dl
15) , , p o
p pr
, I H dl
c V L LCv Z
v I C C v Cε
e
∮
2 22
2 21) solve ( ) from Helmholtz equation ( ) ( ) 0 : TE casez C zh x, y k h x, y
x y
2 2
22 2
solve ( ) from Helmholtz equation ( ) ( ) 0 : TM casez zce x,y k e x,yx y
微波電路講義3-3
2 2 2 2
2 2
2) apply B.C. to find
3) ( ) ( )
, : TE case
( ) ( )
,
c
j z
z z
z z z zx y x y
c c c c
j z
z z
z zx y
c c
k
H x, y,z h x, y e
H H H Hjβ jβ j jH , H E , H
k x k y k y k x
E x, y,z e x, y e
E Ej jH , H E
k y k x
e e
2 2
2 2
: TM case
4) ( ) , ( )
z zx y
c c
x xc TM TE
y y
E Ej j, H
k x k y
E E kk k ,Z Z
H k H
e
• Dielectric loss2 tan
( / ) : TE or TM case2
tan( / ) : TEM case
2
d d
d
kj NP m
kNP m
a a
a
微波電路講義3-4
(derivation of the dielectric loss expression)
2 2 2 2 2 2 2 2
2 2 2 2 2
2 2
2 2 2 2 2
22 2
. 0 ( ) 0 ( ) 0
0,
( ' ") '(1 tan ) 1 tan
"tan , '
'
(1 tan ) tan
1 tan
2
xy z xy
xy c c
d c d
d
c c
c
c
wave eq E k E E k E E k E
E k E k k
j k k
k j j k j
k
k k j k k jk
jkk k
k
a
e e e e
e e
e
2
2 2
2
1 tan
2
tan( / ) : TE or TM case
2
tan( / ) : TEM case 0
2
d
d
d c
kj j
k
kNP m
kNP m k
a
a
a
微波電路講義3-5
3.5 Coaxial line
• TEM modeln
( , )ln
ˆ( , , ) ( , )
ln
ˆ1ˆ( , , ) ( , , )
ln
( ) ( , , )
2( ) ( , , )
ln
( ) ln
( ) 2
o
jkz jkzot
jkzo
TEM
b
jkz jkz
o o
a
jkz jkzoo
o
bV
b a
VE z e e
b a
VH z z E z e
Z b a
V z E z dl V e V e
VI z H z dl e I e
b a
V z b aZ
I z
∮
60ln ,
2ln , (Table 2.1, p.54)
2 ln /
r
b Lk
a C
bL C
a b a
e e
e
x
y
b
a
Vo
微波電路講義3-6
• Higher order mode effect
TE11 mode (p.133 Fig.3.17) e )ba(
1ff cmax
Power
meter
output
power
f
微波電路講義3-7
Discussion
1. Conformal mapping solution (Collin, Field theory of guided waves,
p.262)
ln ln
ln
j
Z x jy
W Z e
j
u jv
2 ln 22 2 2
0 ln
ln
ln ln
1 1( ) ( )
2 ln 2
2 1, ln ,
ln 2
o
b
oe o
a
o
p
b uV
b a
VW dudv CV
u v b a
bC Z
b a v C C a
e e
ee
e
x
y
a
b
er
Z-plane
W-plane
2
er
ln a ln b u
v
Vo 0Vo
微波電路講義3-8
2. Reasons for selecting Zo=50
Coaxial line has minimum attenuation as Zo=77 (Prob. 2-27),
and maximum power capacity as Zo=30 (Prob. 3-28).
3. Types of coaxial connectors
type-N, SMA, APC3.5, APC2.4,….. (p.134, point of interest)
characteristic impedance
for coaxial airlines (ohms)
10 20 30 40 50 60 70 80 90 100
1.0
0.8
0.7
0.6
0.5
0.9
1.5
1.4
1.3
1.2
1.1no
rmal
ized
val
ues
50 ohm standard
attenuation is lowest
at 77 ohms
power handling capacity
peaks at 30 ohms
微波電路講義3-9
3.7 Stripline
• Conformal mapping solution
(Collin’s book, p.265)
o
o
1 B)1Z)(xZ(Z
dZA'W
CZ,
v
4C
vC
o
o
o
ee
e
=Vo
=Vo 1
=Vo
=Vo
= 0
= 0
= 0
= 0
= 0
er
er
W-plane
W’-plane
Z-plane
W
b
b/2
vo
B)Z(Z
dZAW
1
-x 1
b
w
o
2cosh
2
微波電路講義3-10
• Electrostatic solution
2 ( ) 0 2 0
( ) 0 2 0
cos sinh 0 2
( )
cos sinh ( ) 2
( )cos cosh
t
n
odd
n
odd
n
y
x, y x a , y b
B.C. x, y x a , y ,b
nπ nπA x y y b
a ax, y
nπ nπA x b y b y b
a a
nπ nπ nπA x y
a a aE
y
2
0
0 2
( )cos cosh ( ) 2
1 2( ) ( 2) ( 2) ...(3.189)
0 2
( 0 ) 2 sinh4
odd
n
odd
s y y n
b
y n
y b
nπ nπ nπA x b y b y b
a a a
x Wρ x D x, y b D x, y b A
x W
nπV E x , y dy A b, Q
a
2
2
( )
1...(3.192),
W
s
odd W
r
o
p
ρ x dx W
εQ L C Z
V C v C cC
-a/2 a/2 x
yb
Wer
微波電路講義3-11
Discussion
1. analysis eq.(3.179)
synthesis eq.(3.180)
2.
W,b,Z
Z,b,W
o
o
e
e
eq.(3.181) cd ,2
tanka
a
roZ e
bW /
roZ e
180
160
140
120
100
80
70
60
50
40
30
20
0.2 0.3 0.4 0.5 0.6 0.71.0 2.0 3.0 4.0
微波電路講義3-12
3.8 Microstrip
• Characteristics
fabrication by printed circuit
devices can be bonded to strip
component are accessible
in-circuit characterization of devices is straightforward to implement
dc as well as ac signals can be transmitted
large variation in Zo
ac > ad
monolithic applications
structure is rugged and can withstand high voltages and power levels
power handling is best with BeO substrate
used up to 300GHz or more
quasi-TEM mode for d<<λ
W
d er
微波電路講義3-13
• eeff concept
o p o
p
2og
p
TEM line ,
1air filled microstrip (TEM line)
1 1 cmicrostrip (quasi-TEM line) Z , k ,
C C
Z 1 C , ( )
C
oo p o r
r r
oa
a a
eff
eff
o ae
oa aeff eff
L cZ , v , β k ε
C ε
LZ
C cC
L, v
v LC
C c
Z C v
e
e
ee
e
e eff
er
eeff
微波電路講義3-14
1 ( 1)
2
1 ( 1)
2
1filling factor (1 )1 1 ( 1) , 1
2
eff r eff r
r eff r
eff r rq q q q q
e e e e
e e e
e e e
erer
effe
re
)1(2
1
re
dW /
微波電路講義3-15
• Conformal mapping solution (Gupta, Garg and Bahl, Microstrip
lines and slotlines, p.9)
'Z2
'ZtanhdjZ
'g
s'a'gq
"s's"ss
r
e
x
yW/2
d
er
Z-plane
Z’-plane
a’ g’ x’
y’
y’y’
a’ g’ x’
a’ g’ x’
s’
s’-s” s”
s
微波電路講義3-16
• Electrostatic solution
2
( )
( ) 0 2 0
( ) 0 2 0
cos sinh 0
( )
cos sinh
( )
t
n
odd
n y d a
n
odd
n
y
x, y x a , y
B.C. x, y x a , y ,
nπ nπA x y y d
a ax, y
nπ nπA x de d y
a a
nπA
aE
y
( )
0
cos cosh 0
( )cos sinh
1 2( ) ( ) ( ) ( ) ( )
0 2
odd
n y d a
n
odd
s y y o y o r y n
d
y
nπ nπx y y d
a a
nπ nπ nπA x d e d y
a a a
x Wρ x D x, y d D x, y d E x, y d E x, y d A
x W
V E
e e e
2
2
( 0 ) sinh ( )
1, ,
W
n s
odd W
eff
eff o
a p
nπx , y dy A d, Q ρ x dx W
a
εQ C L C ε Z
V C C v C cC
er
Wd
-a/2 a/2 x
y
微波電路講義3-17
Discussion
1. analysis eq.(3.196, 195)
synthesis eq.(3.197, 195)
2.
effo
effo
,W,d,Z
, Z,d,W
ee
ee
(3.199) (3.198)12
1
WZ
Rα,
)(
tan)(k
o
sc
reff
effro
d ee
eea
er
W/d0.2 0.5 1 2 5 10 20
16
10
5
2
150
120
100
80 50 30 20 10
微波電路講義3-18
(derivation of eq.(3.198))
tantanTEM line
2 2
microstrip line:
1(1) (1 ) ( 1) 1
1
(2)
"(3)tan tan , " " 0(1 ) "
tan "" "
2 2 2 2
o r
d
eff
eff r r
r
r eff
eff
eff eff
eff
o eff eff o eff o od r
eff reff eff
kk
q q q q
q q q
k k k q k qq
e a
e e e e
e
e e
e e e e
e
e e ee ea e
e ee e
1 1tan
tan1 12 2
eff effo o rr
r reff eff
k ke e e e
e e e e
微波電路講義3-19
4. substrate material
r
2 3
ε tanδ@10GHz
GaAs 12.9 0.002
Al O (99.5%) 10.1 0.25 0.0002
quartz 3.8
0.0001
RT/duroid 5880 2.2 0.02 0.0009
RT/duroid 6006 6.15 0.15 0.0027
BeO 6.8 0.0003
FR4 (G-10) 4-4.6
*2
*3 4
0.018-0.025
Si 11.7 0.005
SiO 4
Si N 7.6 (vapor phase)
6.5 (sputtering)
*: MIM capacitor
conductor material
s thicknesum) (35 mil 1.4Cu oz 1
4.0 7.2 Ta
2.7 4.7 Cr
1.9 3.3 Al
1.7 3.0 Au
1.5 2.6 Cu
1.4 2.5 Ag
(um)@2GHz )f10/sq( R -7
s
s
ωμσ δs
2depthskin
微波電路講義3-20
3.11 Summary of transmission lines and waveguides
• comparison of coaxial line, stripline and microstrip, (p.158,
Table 3.6)
• CPW (coplanar waveguide)
fabrication easy
quasi-TEM operation
radiation problem when gap width approaches /2
monolithic applications
less radiation than microstrip if well-balanced
higher order modes (coupled slot mode)
• www.appwave.com for computer assisted transmission line
analysis
er
Ws s
微波電路講義3-21
Solved Problems
Prob. 3.28 Find Zo of a coaxial line to have maximum power
capacity
6max
2 2 2max
max max
max
breakdown field strength of air 3 10 / ln
ln
1maximum power capacity , ln ln
2 2
1 377 10 ln ln 30
2 2 2 2
od d
o do
o o
oo
V bE V m V E a
b a
a
V b a E bP Z P
Z a a
dP b bZ
da a a
ADS examples: Ch3_prj