cmos fabrication
DESCRIPTION
PPtTRANSCRIPT
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Fabrication Process
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Wafer preparation
Metallurgical grade silicon-electronic grade silicon(99.99% pure)Single crystalline structure obtained by melting and then cooling ---
Czochralski method Ingot cut into wafers using diamond sawWafers are than polished to mirror finish
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Silicon Wafer creation
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CMOS Inverter
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0: Introduction 8
Inverter Cross-section
Typically use p-type substrate for nMOS transistorsRequires n-well for body of pMOS transistors
n+
p substrate
p+
n well
A
YGND VDD
n+ p+
SiO2
n+ diffusion
p+ diffusion
polysilicon
metal1
nMOS transistor pMOS transistor
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0: Introduction 9
Well and Substrate Taps
Substrate must be tied to GND and n-well to VDD
Use heavily doped well and substrate contacts / taps
n+
p substrate
p+
n well
A
YGND VDD
n+p+
substrate tap well tap
n+ p+
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0: Introduction 10
Inverter Top View
GND VDD
Y
A
substrate tap well tapnMOS transistor pMOS transistor
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0: Introduction 11
Detailed Mask Views
Six masksn-wellPolysiliconn+ diffusionp+ diffusionContactMetal
Metal
Polysilicon
Contact
n+ Diffusion
p+ Diffusion
n well
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Fabrication Process
Blank Wafer
Oxidation
Photolithography
N-well formation
Polysilicon gate formation
n+ diffusion
pp+ diffusion
metalization
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0: Introduction 13
Fabrication Steps
Start with blank wafer (typically p-type where NMOS is created)
p substrate
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Oxidation
Grow Sio2 on top of Si wafer
Wet oxidation– (900°-1000°c), 2:1 mixture of H2and O2 (pyrogenic oxidation)
Dry oxidation-(1200°c) O2
p substrate
SiO2
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PhotoresistPhoto resist
Photoresist is a light-sensitive organic polymerProperty changes when exposed to light
Two types of photo resists (positive or negative)Positive resists can be removed if exposed to UV lightNegative resists cannot be removed if exposed to UV light
p substrate
SiO2
Photoresist
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LithographyExpose photoresist to Ultra-violate (UV) light through the n-well
maskStrip off exposed photo resist with chemicals
p substrate
SiO2
Photoresist
n-well mask
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Etch
Etch oxide with hydrofluoric acid (HF)Only attacks oxide where resist has been exposedN-well pattern is transferred from the mask to Sio2 surface; creates
an opening to the silicon surface
p substrate
SiO2
Photoresist
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Strip Photoresist
Strip off remaining photoresistUse mixture of acids called piranah etch
Necessary so resist doesn’t melt in next step
p substrate
SiO2
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N-wellN-well is formed with diffusion or ion implantationDiffusion
Place wafer in furnace with arsenic-rich gasHeat until As atoms diffuse into exposed Si
Ion ImplanatationBlast wafer with beam of As ions Ions blocked by SiO2, only enter exposed Si
SiO2 shields (or masks) areas which remain p-type
n well
SiO2
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Strip Oxide
Strip off the remaining oxide using HFSubsequent steps involve similar series of steps
p substraten well
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Polysilicon
Deposit very thin layer of gate oxide< 20 Å (6-7 atomic layers)
Chemical Vapor Deposition (CVD) of silicon layerPlace wafer in furnace with Silane gas (SiH4)Forms many small crystals called polysiliconHeavily doped to be good conductor
Thin gate oxidePolysilicon
p substraten well
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0: Introduction 22
Polysilicon Patterning
Use same lithography process to pattern polysilicon
Polysilicon
p substrate
Thin gate oxidePolysilicon
n well
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Self-Aligned Process
Use gate-oxide/poly silicon and masking to expose where n+ dopants should be diffused or implanted
p substraten well
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0: Introduction 24
N-diffusion/implantation
Pattern oxide and form n+ regionsN-diffusion forms nMOS source, drain, and n-well contactPolysilicon is better than metal for self-aligned gates because it doesn’t
melt during later processing
p substraten well
n+ Diffusion
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0: Introduction 25
N-diffusion cont.Historically dopants were diffusedUsually high energy ion-implantation used todayBut n+ regions are still called diffusion
n wellp substrate
n+n+ n+
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0: Introduction 26
N-diffusion cont.
Strip off oxide to complete patterning stepSource and drain are separated by channel under the gate self
aligned process
n wellp substrate
n+n+ n+
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0: Introduction 27
P-Diffusion
Similar set of steps form p+ diffusion regions for pMOS source and drain and substrate contact
p+ Diffusion
p substraten well
n+n+ n+p+p+p+
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0: Introduction 28
ContactsNow we need to wire together the devicesCover chip with thick field oxide (FO)Etch oxide where contact cuts are needed
p substrate
Thick field oxide
n well
n+n+ n+p+p+p+
Contact
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Contacts
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0: Introduction 30
Metalization
Sputter on aluminum over whole waferGold is used in newer technologyPattern to remove excess metal, leaving wires
p substrate
Metal
Thick field oxide
n well
n+n+ n+p+p+p+
Metal
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Metalization cross section
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Over glass and pad openings(Passivation)
A protective glass layer is added over the surfaceThe protective layer consists of:
A layer of SiO2
Followed by a layer of silicon nitrideThe SiN layer acts as a diffusion barrier against contaminants
(passivation)OpeningConnection to I/O pads, test probesBumping
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p substrate
p substrate
SiO2
p substrate
SiO2
Photoresist
p substrate
SiO2
Photoresist
N-well Fabrication overview
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p substrate
SiO2
Photoresist
p substrate
SiO2
n well
SiO2
p substraten well
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Thin gate oxidePolysilicon
p substraten well
p substrate
Thin gate oxidePolysilicon
n well
p substraten well
p substraten well
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n wellp substrate
n+n+ n+
n wellp substrate
n+n+ n+
p substraten well
n+n+ n+p+p+p+
p substrate
Thick field oxide
n well
n+n+ n+p+p+p+
p substrate
Metal
Thick field oxide
n well
n+n+ n+p+p+p+
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CMOS fabrication process overview 8-37
Twin-Tub (Twin-Well) CMOS Process
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Fabrication ProcessCrystal growth
Wafers
Pattering:-Repeated steps of Lithography Diffusion and Etching
Testing
Packaging
Dicer:- Cut the Patterned wafers into dice
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LithographyThe lithographic sequence is repeated for each physical layer used to
construct the IC. The sequence is always the same:Photo-resist applicationPrinting (exposure)DevelopmentEtching
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PhotomaskreticleSteppermoves reticle
Types of printing:Projection printingContact printingProximity printing
Light sourceMercury lamp – 436nm or 365 nmLasers-248nm (deep UV)Argon fluoride laser-193nm
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Silicon oxidationWet oxidation– (900°-1000°c), 2:1 mixture of H2and O2 (pyrogenic
oxidation)Dry oxidation-(1200°c) O2 Atomic Layer deposition- process in which a thin chemical layer
(material A) is attached to a surface and then a chemical (material B) is introduced to produce a thin layer of the required layer (i.e., Si02).
The process is then repeated and the required layer is built up layer by layer.
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Contacts and Metalization
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Contact- cut mask
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Metal mask
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Metal 2
Another layer of LTO CVD oxide is addedVia openings are createdMetal 2 is deposited and patterned
n-well
p-type
n+ p+
Via metal 1metal 2
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Circuit Under DesignVDD VDD
Vin Vout
M1
M2
M3
M4
Vout2
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Circuit Layout
gnd
vdd
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Start Material
Starting wafer: n-type withdoping level = 1013/cm3
* Cross-sections will be shown along vertical line A-A’
A
A’
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N-well Construction
(1) Oxidize wafer(2) Deposit silicon nitride(3) Deposit photoresist
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N-well Construction
(4) Expose resist using n-wellmask
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N-well Construction
(5) Develop resist(6) Etch nitride and(7) Grow thick oxide
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N-well Construction
(8) Implant n-dopants (phosphorus)(up to 1.5 m deep)
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P-well Construction
Repeat previous steps
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Grow Gate Oxide
0.055 m thin
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Grow Thick Field Oxide
Uses Active Area mask
Is followed by threshold-adjusting implants
0.9 m thick
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Polysilicon layer
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Source-Drain Implants
n+ source-drain implant(using n+ select mask)
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Source-Drain Implants
p+ source-drain implant(using p+ select mask)
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Contact-Hole Definition
(1) Deposit inter-level dielectric (SiO2) — 0.75 m
(2) Define contact opening using contact mask
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Aluminum-1 Layer
Aluminum evaporated (0.8 m thick)
followed by other metal layers and glass
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Advanced Metalization
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