cpsc 330 computer organization - christopher …gerousis/courses/cpsc330/history.pdfby experimenting...
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CPSC 330Computer Organization
History & Technology
Some figures from Computer Organization& Design,
The Hardware/Software InterfaceCopyright 2007, Morgan Kaufmann Publishers
CPSC330 CompOrg: Dr. Gerousis History & Technology 2
Overview
n Computer History– 1st Transistor– 1st Integrated Circuit (IC)– 1st Microprocessor
n Computer Technology– Chip Manufacturing Process– World's Smallest Working Silicon Transistor– World's Fastest Silicon Transistor
n Intel short movie (May 2007)
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Computer HistoryENIAC – 1940-45n Electronic Numerical Integrator & Calculatorn Viewed as the 1st modern computern Developed in WW II by Echert & Mauchlyn Stats:
– Took up a large room– Built with 18,000 vacuum tubes– 1900 additions/second– 20 10-bit registers
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History1st Transistor - 1947
n John Bardeen & Walter Brattain built the 1st working amplifying transistor
n William Shockley, their boss got most of the creditn All awarded Nobel Prize for inventionn See PBS special, “Transistorized”n What was the 1st transistorized device of the
Information Age?
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HistoryTransistor Radio
n 1st Device of the Information Agen 1954 – “The Regency” by I.D.E.A. and
TR1 by Texas Instrumentsn Too expensive!!! (~$50)n Shockley blamed the transistor for
Rock-n-Roll!
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n Jack Kilby of Texas Instruments built the first “IC” on silicon in 1958
n Robert Noyce of Fairchild Semiconductor independently developed one in 1959
n Joyce awarded patent firstn Later Noyce started his own company called
‘Intel’.
History1st Integrated Circuit - 1958
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History1st Microprocessor - 1971
n In November, 1971, Intel publicly introduced the world's first single chip microprocessor, the Intel 4004.
n Invented by Intel engineers Federico Faggin, Ted
Hoff, and Stan Mazor.n 1/8th inch wide by 1/6th inch long and consisting
of 2,300 MOSFETs.
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HistoryMoore’s Law - 1965
Gordon Moore predicted that the number of transistors on a microprocessor chip would double about every two years…he was somewhat pessimistic, it happens about every 1.6 years.
feature size~90 nmheading toward ~2 billion transistors in 2007
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n Processor• logic capacity: about 30% per year• clock rate: about 20% per year
n Memory• DRAM capacity: about 60% per year• Memory speed: about 10% per year• Cost per bit: improves about 25% per year
n Disk• capacity: about 60% per year
n Network Bandwidth• Bandwidth increasing more than 100% per year!
Technology - dramatic change
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Chip manufacturing process
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http://www.casetechnology.com/links.html
Fabrication
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http://www.research.philips.com/newscenter/pictures/ics-processing.html
Fabrication
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Computers in the News: IBM Announces World's Smallest Working Silicon Transistor
At six nanometers in length, this new transistor is at least 10 times smaller than the state-of-the-art transistors in production today. "The ability to build working transistors at these dimensions could allow us to put 100 times more transistors intoa computer chip than is currently possible," said Dr. Randy Isaac, vice president of science and technology, IBM Research.
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Computers in the News: IBM's world's fastest silicon transistor
IBM has created the fastest silicon-based transistor in history, running at 350 GHz! IBM has improved the transistor further by thinning the SiGe layer in the transistor, effectively shortening the electrical path, making the transistor faster and more powerefficient. Since transistors are the basic building blocks of chips, this advancement is expected to result in chips that run as fast as 150 GHz within two years.
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Computers in the News: IBM Creates World's Highest Performing Nanotube Transistors
By experimenting with different device structures, the researchers were able to achieve the highest transconductance (measure of the current carrying capability) of any carbon nanotube transistor to date. High transconductance implies that transistors can run faster, leading to more powerful integrated circuits.
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Single-Electron Tunneling Transistor (SET) Circuits and Architectures
R,Cd d R,Cs s
island
Va _+
Vg _+
Cg
__
n1 n2sourcedrain
gate
Metal-Oxide Junction
Evaporation 1Evaporation 2 Suspendedbridge
Oxide
Metal
Mask
Overlay metal
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SET neural/non-linear circuit
Vout
CgV1
C1
C2
V2
Cn
Vn CL
-1.0 -0.5 0.0 0.5 1.00.1
0.2
0.3
0.4
0.5
Cg=0.15aFCload=0.25aFCt=0.1aF
T=300 K
V2=0.5 , V3=0.5 V2=0.5 , V3=0 V2=1.0 , V3=0.5
Vou
t (V)
V1 (V)
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Programmable SET Logic Circuits
0.0 0.2 0.4 0.6 0.8 1.0
0.6
0.2
0.0
0.4
AB
A+B
(V
)
Time (arbitrary)0.0 0.2 0.4 0.6 0.8 1.0
0.6
0.2
0.0
0.4
AB
A B
(V
)
Time (arbitrary)
control (V3) = low control (V3) = high
Vout
CgV1
C1
C2
V2
CnVn CL