datasheet ipu95r3k7p7 · 1 ipu95r3k7p7 final data sheet rev. 2.0, 2018-06-01 1 2 tab 3 ipak drain...

1

IPU95R3K7P7

Rev.2.0,2018-06-01Final Data Sheet

1 2

tab

3

IPAK

Drain

Pin 2

Gate

Pin 1

Source

Pin 3

*1

*2

*1: Internal body diode

*2: Integrated ESD diode

MOSFET950VCoolMOSªP7SJPowerDeviceThelatest950VCoolMOS™P7seriessetsanewbenchmarkin950Vsuperjunctiontechnologiesandcombinesbest-in-classperformancewithstateoftheartease-of-use,resultingfromInfineon’sover18yearspioneeringsuperjunctiontechnologyinnovation.

Features•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss•Best-in-classIPAKRDS(on)•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V•IntegratedZenerDiodeESDprotection•Best-in-classCoolMOS™qualityandreliability•Fullyoptimizedportfolio

Benefits•Best-in-classperformance•Enablinghigherpowerdensitydesigns,BOMsavingsandlowerassemblycosts•Easytodriveandtoparallel•BetterproductionyieldbyreducingESDrelatedfailures•Lessproductionissuesandreducedfieldreturns•Easytoselectrightpartsforfinetuningofdesigns

PotentialapplicationsRecommendedforflybacktopologiesforLEDLighting,lowpowerChargersandAdapters,SmartMeter,AUXpowerandIndustrialpower.AlsosuitableforPFCstageinConsumerandSolarapplications.

ProductValidation:Fullyqualifiedacc.JEDECforIndustrialApplications

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseperatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj=25°C 950 V

RDS(on),max 3.7 Ω

Qg,typ 6 nC

ID 2 A

Eoss @ 500V 0.5 µJ

VGS(th),typ 3 V

ESD class (HBM) 1C -

Type/OrderingCode Package Marking RelatedLinksIPU95R3K7P7 PG-TO 251-3 95R3K7P7 see Appendix A

2

950VCoolMOSªP7SJPowerDeviceIPU95R3K7P7


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3



1MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID --

--

21.4 A TC=25°C

TC=100°C

Pulsed drain current2) ID,pulse - - 5 A TC=25°C

Avalanche energy, single pulse EAS - - 2 mJ ID=0.2A; VDD=50V; see table 10

Avalanche energy, repetitive EAR - - 0.04 mJ ID=0.2A; VDD=50V; see table 10

Application (Flyback) relevantavalanche current, single pulse3) IAS - 1.8 - A measured with standard leakage

inductance of transformer of 10µH

MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400VGate source voltage (static) VGS -20 - 20 V static;

Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)

Power dissipation Ptot - - 22 W TC=25°CStorage temperature Tstg -55 - 150 °C -

Operating junction temperature Tj -55 - 150 °C -

Mounting torque - - - - Ncm -

Continuous diode forward current IS - - 1.5 A TC=25°CDiode pulse current2) IS,pulse - - 5 A TC=25°C

Reverse diode dv/dt4) dv/dt - - 1 V/ns VDS=0...400V,ISD<=0.4A,Tj=25°C see table 8

Maximum diode commutation speed diF/dt - - 50 A/µs VDS=0...400V,ISD<=0.4A,Tj=25°C see table 8

Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1) Limited by Tj,max. Maximum Duty Cycle D = 0.52) Pulse width tp limited by Tj,max3) For further explanation please read AN - CoolMOSTM 700V P7 & 950V P74) Identical low side and high side switch with identical RG

4



2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case RthJC - - 5.6 °C/W -

Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded

Thermal resistance, junction - ambientfor SMD version RthJA - - - °C/W n.a.

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

5



3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 950 - - V VGS=0V,ID=1mAGate threshold voltage V(GS)th 2.5 3 3.5 V VDS=VGS,ID=0.04mA

Zero gate voltage drain current IDSS --

-10

1- µA VDS=950V,VGS=0V,Tj=25°C

VDS=950V,VGS=0V,Tj=150°C

Gate-source leakage current IGSS - - 1000 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

3.116.88

3.7- Ω VGS=10V,ID=0.8A,Tj=25°C

VGS=10V,ID=0.8A,Tj=150°C

Gate resistance RG - 1.5 - Ω f=250kHz,opendrain

Table5DynamiccharacteristicsValues


Input capacitance Ciss - 196 - pF VGS=0V,VDS=400V,f=250kHzOutput capacitance Coss - 3 - pF VGS=0V,VDS=400V,f=250kHz

Effective output capacitance, energyrelated1) Co(er) - 5 - pF VGS=0V,VDS=0...400V

Effective output capacitance, timerelated2) Co(tr) - 47 - pF ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time td(on) - 7 - ns VDD=400V,VGS=13V,ID=0.8A,RG=50Ω;seetable9

Rise time tr - 23 - ns VDD=400V,VGS=13V,ID=0.8A,RG=50Ω;seetable9

Turn-off delay time td(off) - 46 - ns VDD=400V,VGS=13V,ID=0.8A,RG=50Ω;seetable9

Fall time tf - 40 - ns VDD=400V,VGS=13V,ID=0.8A,RG=50Ω;seetable9

Table6GatechargecharacteristicsValues


Gate to source charge Qgs - 1 - nC VDD=760V,ID=0.8A,VGS=0to10VGate to drain charge Qgd - 2 - nC VDD=760V,ID=0.8A,VGS=0to10VGate charge total Qg - 6 - nC VDD=760V,ID=0.8A,VGS=0to10VGate plateau voltage Vplateau - 4.4 - V VDD=760V,ID=0.8A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

6



Table7ReversediodecharacteristicsValues


Diode forward voltage VSD - 0.9 - V VGS=0V,IF=0.8A,Tj=25°C

Reverse recovery time trr - 320 - ns VR=400V,IF=0.4A,diF/dt=50A/µs;see table 8

Reverse recovery charge Qrr - 1 - µC VR=400V,IF=0.4A,diF/dt=50A/µs;see table 8

Peak reverse recovery current Irrm - 5 - A VR=400V,IF=0.4A,diF/dt=50A/µs;see table 8

7



4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

5

10

15

20

25

Ptot=f(TC)

Diagram2:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-4

10-3

10-2

10-1

100

101

1 µs

10 µs

100 µs

1 ms

DC

10 ms

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-4

10-3

10-2

10-1

100

101

1 µs

10 µs

1 ms

100 µs

DC

10 ms

ID=f(VDS);TC=80°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-110-1

100

101

0.5

0.2

0.1

single pulse

0.050.020.01

ZthJC=f(tP);parameter:D=tp/T

8



Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

1

2

3

4

20 V10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

1

2

20 V10 V

8 V

7 V6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 1 24.000

6.000

8.000

10.000

12.000

4 V 4.5 V

5.5 V

6 V

10 V

20 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram8:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [no

rmalized]

-50 -25 0 25 50 75 100 125 1500.5

1.0

1.5

2.0

2.5

RDS(on)=f(Tj);ID=0.8A;VGS=10V

9



Diagram9:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 120

1

2

3

4

25 °C

150 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram10:Typ.gatecharge

Qgate[nC]

VGS [V]

0 2 4 6 80

2

4

6

8

10

12

120 V 760 V

VGS=f(Qgate);ID=0.8Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.810-1

100

101

125 °C 25 °C

IF=f(VSD);parameter:Tj

Diagram12:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

1

2

EAS=f(Tj);ID=0.2A;VDD=50V

10



Diagram13:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-50 -25 0 25 50 75 100 125 150850

900

950

1000

1050

1100

VBR(DSS)=f(Tj);ID=1mA

Diagram14:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 50010-1

100

101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 500 600 700 800 900 10000

1

2

Eoss=f(VDS)

11



5TestCircuits

Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

12



6PackageOutlines

33N

L2

L 8.89

0.89 0.035

0.3509.65

1.37 0.054

0.380

4.57

2.29

MILLIMETERS

A1

b4

b2

b

A

DIM

D1

E

E1

c2

D

e1

e

c

0.90

2.16

0.64

0.65

4.95

MIN

0.46

5.97

5.04

6.35

4.70

0.46

0.035

0.025

0.085

0.185

0.250

0.198

0.235

0.018

0.018

0.195

0.026

m

1.14

0.89

2.41

1.15

5.50

MAX

0.89

6.22

5.77

6.73

5.21

0.60

j

INCHES

0.180

0.090

MIN

0.045

0.035

MAX

0.095

0.205

0.265

0.227

0.245

0.035

0.024

0.217

0.045

m

2.0

EUROPEAN PROJECTION

ISSUE DATE

SCALE

0

4mm

0

2.0

REVISION

01-04-2016

04

DOCUMENT NO.

Z8B0003330

1.90 0.0752.29 0.090L1

c

Figure1OutlinePG-TO251-3,dimensionsinmm/inches

13



7AppendixA

Table11RelatedLinks

• IFXCoolMOSP7Webpage:www.infineon.com

• IFXCoolMOSP7applicationnote:www.infineon.com

• IFXCoolMOSP7simulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

http://www.infineon.com/tools

http://www.infineon.com/P7



14



RevisionHistoryIPU95R3K7P7

Revision:2018-06-01,Rev.2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2018-06-01 Release of final version

TrademarksAllreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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PublishedbyInfineonTechnologiesAG81726München,Germany©2018InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics(“Beschaffenheitsgarantie”).

Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthisdocumentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseoftheproductofInfineonTechnologiesincustomer’sapplications.Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.

InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

datasheet ipu95r3k7p7 · 1 ipu95r3k7p7 final data sheet rev. 2.0, 2018-06-01 1 2 tab 3 ipak drain...

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