DAVID V. KERNS, JR.

Curriculum Vitae

Updated: April 2010

I. Present Positions and Contact Information

Franklin and Mary Olin Distinguished Professor of Electrical and Computer Engineering (current appointment); Founding Provost (from 1999 to 2007) Franklin W. Olin College of Engineering Olin Way, Needham, MA 02492-1245 Telephone: 781 292-2350 FAX: 781 292-2360 Email: david.kerns@olin.edu

Secondary Academic Appointments:

Professor of Technology Entrepreneurship Arthur M. Blank Entrepreneurship Center Babson College Babson Park, MA, 02457

Professor (Adjoint) Department of Electrical Engineering and Computer Science Vanderbilt University

Nashville, TN, 37219

II. Work Experience

Work Experience Summary

September 1999 – Present

Franklin and Mary Olin Distinguished Professor of Electrical and Computer Engineering Franklin W. Olin College of Engineering, Needham, MA

September 1999 – September 2007

Founding Provost and Chief Academic Officer; Franklin and Mary Olin Distinguished Professor of Electrical and Computer Engineering Franklin W. Olin College of Engineering, Needham, MA

July 1995 – August 1999 Acting Dean, School of Engineering (until August 1996) Professor of Electrical Engineering

Director, Management of Technology Program and Orrin Henry Ingram Distinguished Professor, Vanderbilt University, Nashville, TN

July 1993 - July 1995

Associate Dean for Administration, School of Engineering Professor of Electrical Engineering Vanderbilt University, Nashville, TN

August 1987 - July 1993

Chairman and Professor, Department of Electrical Engineering Director, Management of Technology Program (since 1989) Orrin Henry Ingram Distinguished Professor (since 1990), Vanderbilt University

December 1984 - August 1987

Chairman and Professor, Department of Electrical Engineering FAMU/FSU College of Engineering, Florida State University, Tallahassee, FL

December 1983 - October 1984

President and CEO, Element Analysis Corporation Tallahassee, FL

May 1978 - December 1983

Founder, Executive Vice President, and President, Insouth Microsystems, Inc. Auburn, AL

September 1975 - December 1980

Assistant Professor, Associate Professor, Department of Electrical Engineering Auburn University, Auburn, AL

June 1973 - September 1975

Member of Technical Staff, Bell Telephone Laboratories

September 1971 - June 1973

Assistant Professor of Electrical Engineering, Bucknell University (Also taught Physics) August 1969 - August 1971

North Florida Junior College, Madison, Florida Instructor of Physics (Full-time)

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III. Academic

Education

The Florida State University: Doctor of Philosophy, Engineering Science. Major Area: Electrical Engineering; Two minor areas: Physics and Mathematics.

Dissertation topic: “Radiation Effects on Junction Transistor Noise Utilizing a Computer Controlled Noise Measuring System.”

The Florida State University; Master of Science, Engineering Science. Thesis topic: “A System for Photon Noise Measurement and its Application in a Study of Electroluminescence in GaAs Diodes.”

The Florida State University; Bachelor of Science, Engineering Science; Major area: Electrical Engineering; Two minor areas: Physics and Mathematics.

University of Louisville; NSF Summer Institute in Biomedical Engineering, certificate 1972.

Massachusetts Institute of Technology (MIT), - Center for Advanced Engineering Study - Certificate, Management of Technology, December 1991 - August 1992.

Honor Societies and Service Organizations

Omicron Delta Kappa, Florida State University, 1968.

Phi Sigma Epsilon, Engineering-Science Honor Society, Florida State University, 1967.

Gold Key, Leadership-Service Fraternity, Florida State University, 1968.

Sigma Xi, Scientific Research Society of North America, 1976.

Eta Kappa Nu, Auburn University, 1976. (National Electrical Engineering Honor Society)

Tau Beta Pi, Auburn University, 1977. (National Engineering Honor Society)

Awards and Honors

IEEE Education Society, Edwin C. Jones Meritorious Service Award; citation: “for exemplary service to and leadership of the IEEE Education Society, for contributions to engineering education, for educational innovation, for

textbooks, and for the guidance of the Frontiers in Education conference.” - 2007

IEEE Educational Activities Board Major Educational Innovation Award - citation: “for guiding the invention and

development of academic programs at Franklin W. Olin College of Engineering and thereby honoring best practices in undergraduate engineering education in the USA and worldwide” - 2005

IEEE Third Millennium Medal – 2000.

ASEE Centennial Certificate – 1993 – For exceptional contribution to the American Society for Engineering Education and the Profession of Engineering.

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Fellow of the IEEE (Institute of Electrical and Electronic Engineers) – 1991; awarded by the IEEE for “Contributions to

Engineering Education and Research in Microelectronics.”

Ronald J. Schmitz Award – 1994 Awarded by the IEEE Education Society and the ERM Division of the American

Society for Engineering Education (ASEE) for “Outstanding Service.”

Selected as Sam W. Walton Free Enterprise Fellow. The fellowship program is supported by the Sam M. Walton Foundation, 1995.

Senior Member of the IEEE – 1984.

NASA Award for Creative Technology – 1980; awarded by NASA for “Cost Optimization in Low Volume VLSI Circuits.”

Alumni Professor – 1979; awarded by Auburn University for “Outstanding Teaching and Research.”

Engineer of the Year – 1979; awarded by the Alabama Society of Professional Engineers, Auburn Section to the

“Outstanding Practicing Engineer.”

Garstang Cup – 1967; awarded by The Florida State University to the “Outstanding Senior in Engineering-Science”

Contracts and Research

Served as Principal Investigator (PI) or Co-PI for numerous Government and Industry research contracts. Managed over $7 million in sponsored research contracts (see Research Summary, Section V).

Books and Book Chapters

Essentials of Electrical and Computer Engineering, D. V. Kerns, Jr. and J. D. Irwin, Prentice-Hall, Englewood Cliffs, NJ, 2004.(Electrical Engineering textbook adopted by over 36 colleges and universities)

Introduction to Electrical Engineering, J. D. Irwin and D. V. Kerns, Jr., Prentice-Hall, Englewood Cliffs, NJ, 1995. (Electrical Engineering textbook adopted by over 30 colleges and universities).

“The Effect of Base Contact Position on the Relative Propagation Delays of the Multiple Outputs of an I2L Gate,” in Integrated Injection Logic, Jim Smith, ed. IEEE Press, 1980.

Techniques of Analysis and Measurement, D. V. Kerns, Jr. - a 140 page review manual for a junior level circuits course, FSU Press, 1971.

IV. Specializations

Microelectronics and MEMS: Research, development, technology comparisons and evaluations, including monolithic or hybrid microcircuits, and microelectromechanical systems (MEMS). Design of analog microelectronic devices and circuits; computer modeling and simulation of microelectronic circuit design and performance. Applications, fabrication and analysis techniques. Electrical, thermal and optical characteristics of electronic devices and materials. Silicon-based opto-electronic devices. Diamond-based microelectonic field-emitters, devices, sensors and MEMS. Currently teach a course on MEMS at Olin College.

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Engineering Education: Engineering curriculum innovations; interdisciplinary engineering curricula. Led development of completely new engineering curricula at Olin College. Developed first undergraduate Microelectronics Manufacturing

Engineering Curriculum. Innovations in engineering and technology management education. Textbook and writing of “new media” educational materials.

Management / Academic Administration: Direction of academic units and programs, and industrial programs; project and business management. Led the founding of new academic programs at a new College. Have had “P & L” responsibility for

a school of engineering with approximately $30 million budget, and multimillion-dollar product lines and businesses. Experience with managing all phases of engineering and manufacturing business: personnel, marketing, sales, finance, contracts, engineering, manufacturing, R&D. Strength in “people” skills and technical management.

Intellectual Property (IP): Special interest and experience in technology-based patents and commercialization of intellectual property. Have nine patents, one prosecuted entirely pro se. Have served as patent consultant to legal firms in infringement patent suits, and have successfully licensed patents for manufacture of covered products. Taught basic patent law as part of course on technological entrepreneurship at Vanderbilt University and currently teach intellectual property course for engineers and scientists at Olin College.

Radiation Effects: Effects (permanent and transient) of radiation on the function and performance of electronic devices and circuits. Theoretical analyses based on device physics, and experimental studies. Effects of thermal and other stresses on microelectronic devices and materials.

Technological Entrepreneurship: A lifetime of experience in developing technological innovations, securing IP protection, successful technology transfer and starting technology based entrepreneurial ventures.

V. Research Summary

Funded Research Projects

· Developing and Characterizing Improved Radiation Hard CMOS Technology for Space Applications, D. V. Kerns, Co -

PI, NASA Marshall Space Flight Center, 1978-1981.

· Cost Optimation in Low-Volume VLSI Circuits, D. V. Kerns, Co-PI, NASA Marshall Space Flight Center, 1978-1980.

· Development of Technolgies and Procedures for Advanced Microcircuit Prototype Fabrication, D. V. Kerns, PI, U.S. Army Missile Research and Development Command, 1979-1980.

· Research or development projects under direction of D. V. Kerns, as Executive VP of Technical Operations at Insouth Microsystems, 1979-1983.

· Development of CMOS Radiation Tolerant Random Access Memory (SRAM), Sandia National Laboratories, 1979 (first total dose hardened CMOS memory chip).

· Development of a CMOS Radiation Tolerant Programmable Read-Only Memory (PROM), Jet Propulsion Laboratories (JPL).

· Development of FEC Decoder Gate Array Integrated Circuit, Scientific Atlanta.

· Group Technology CMOS Digital Chip Development, US Army Missile Command.

· Development of Digitizer Controller CMOS IC, Intergraph Corp.

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· Development of Data Path CMOS IC, Intergraph Corp.

· Research on High Reliability, High Shock Hybrid Microcircuits for Post-Impact Penetrator, US Air Force.

· Development of High Shock IC‟ s for Boosted Kinetic Energy Penetrator, Motorola - US Air Force Cruise Missile Program.

· Research and Development of Silicon Accelerometer, US Army, US Air Force.

· Development of Clock Driver Hybrid Microcircuits, Boeing Military Airplane Co.

· Development of Data Selector Circuits, Boeing Military Airplane Co.

· Solid State Relay Hybrid Microcircuits, SCI, Inc.

· High Temperature Hybrid Microcircuits for “Down-Hole” Oil Exploration Electronics, Slumberger, Inc.

· Hybrid Microcircuits for Commercial Avionics, INSCO.

· Development of Hybrid Microcircuits for High-Reliability Laser Range Counter, International Laser Systems, Inc.

· Copperhead Electronics Study and Analysis, US Army Copperhead Program Office.

· Thin-Film Transistors (Research on CdSe Electronic Devices), US Army Missile Command.

· Automated Substrate Probe Development, Martin Marietta.

· Design Analysis of LSI Circuits for Laser Guided Projectiles, US Army.

· Research on Economical Manufacturing Systems for Electronic Components, US Army.

· Development of High Acceleration Solid State Roll Rate Sensor, US Army.

· Solid State Safe and Arm Instrumentation Development, US Air Force.

· ECAM Program Study, Battelle Memorial Laboratories.

· Development of Post-Impact Penetrator Instrumentation, US Air Force.

· Active Silicon Wafer-Scale Packaging Technology, Semiconductor Research Corporation, 1985-1987, Co-PI, $560,000.

· Microelectronics Engineering Manufacturing Engineering Curriculum Development, D. V. Kerns, PI, Semiconductor Research Corporation, 1985-1987.

· Avalanche Breakdown in Silicon Devices for Contactless Testing and Optical Interconnect, D. V. Kerns, PI, Florida High-Tech Council, 1985-1987, $300,000.

· Reliability of Silicon Devices Fabricated Utilizing X-Ray Lithography, D. V. Kerns, PI, Semiconductor Research Corporation, 1988-1992.

· “Reliability and Performance Degradation of Advanced Commercial CMOS Technologies Using X-Ray Lithography,”

Semiconductor Research Corporation, D. V. Kerns and S. E. Kerns, Co-PIs, January 1, 1991 - December 31, 1993, $600,000 (multi-university).

· “Effects of X-Rays on CMOS,” Defense Advanced Research Projects Association / Naval Research Laboratory, S. E. Kerns and D. V. Kerns, Co-Principal Investigators, October 1, 1991 - September 30, 1994, $411,295.

· Strategic Repositioning in the Defense Industry, with J. Bers (Ingram Fellow), 1995.

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· An All-Silicon Based Technology for Optical Interconnect in Advanced VLSI Circuits, D. V. Kerns, Co-PI, Semiconductor Research Corporation, 1996-2001.

· “An All-Silicon Based Optical Interconnect Technology,” Semiconductor Research Corporation, D. V. Kerns, B. L.

Bhuva and S. E. Kerns, Co-Principal Investigators, May 1997 - March 2001, $614,300.

· “Travel for Low-Power SEU Review Team,” Naval Research Laboratory, D. V. Kerns and S. E. Kerns, Co-Principal Investigators, June 1997 - October 1999, $12,240.

· “Reliability of Advanced CMOS Technologies,” Sandia National Laboratory, S. E. Kerns and B. L. Bhuva, Investigator,

October 1, 1997 - September 30, 1998, $50,000.

· American Technology-Based Firms Entering the Chinese Market: A Study of the Electronics Industry, with F. Yang.

· Low-Power SEU Review Team, D. V. Kerns, Naval Research Laboratories 1997-1998.

· Development and Testing of Radiation-hard Diamond Gas Sensor, D. V. Kerns, 1998.

· Shock Hardening of Silicon MEMS Accelerometers, D. V. Kerns, Office of Naval Research, 1999-2000.

· Silicon MEMS Rate Sensor Development, D. V. Kerns, Co-PI, Analog Devices, Inc. (Subcontract from DARPA), 1999- 2000.

· “International Techno-Political Cooperation: A Model for Multinational Technology Cooperation,” Ph.D. student: J. Hudiberg (Ingram Fellow), Co-Primary Advisor, 1999.

· “A Task Contingency Perspective of R&D Boundary Spanning in New Product Development” Ph.D. student: S.-S. Chen (Ingram Fellow), Co-Primary Advisor, 2000.

· Contactless Testing of Silicon Integrated Circuits, Ph.D. student: S. Sayil, Primary Advisor, graduated December 2000.

· Various contributions to a variety of research projects using CVD deposited diamond films for microelectronics and MEMS applications, 1993 to present.

Other Research Projects

· Prediction and Measurement of Photomultiplier and Vacuum Photodiode Noise.

· Effects of Radiation on the Noise Performance of Bipolar Transistors.

· Modeling Inverted Saturated Bipolar Transistors as Loss Elements in Linear IC‟ s.

· A Study of the Effect of Base Contact on the Propagation Delays of an I2L Gate.

· Zener Diode Model Development for Computer Circuit Simulations.

· Development and Modeling of Integrated Current Sources and References with low TCR‟ s.

· Development of Circuit Models for CMOS/SOI Single-Event Vulnerability.

· Piezoresistive Effects in Thick-Film Resistors for Strain Sensing Applications.

· CVD Deposited Diamond Films for High Temperature Gas Sensors, Field Emitters, and Switching Devices.

· Dynamic Clock Control for System Optimization in a Total Dose Radiation Environment.

· Back-gate Voltage Feedback for Total-dose Circuit Hardening of Silicon Integrated Circuits.

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VI. Professional Activities

Registration

· Registered Professional Engineer (PE).

Membership and Service in Professional Societies and Organizations

Fellow of the IEEE, Institute of Electrical and Electronic Engineer, 1991, “For Contributions to Engineering Education

and Research in Microelectronics”.

IEEE Educational Activities Board, Terman Award selection committee; 2006-2010.

Member, IEEE Professional Societies: Education, Engineering Management, Electron Devices, Solid-State Circuits, Nuclear and Plasma Sciences.

Member, ASEE (American Society for Engineering Education).

President, IEEE Education Society, 2003 – 2004.

Vice-President, IEEE Education Society, 2001-2002.

Member ASEE Engineering Dean‟ s Council, representing Olin College, 2000-2007.

Served on Steering Committee International Engineering Education Conference, ICECE99, Sao Paulo, Brazil, 1999.

Served as Consultant to the Dean and President on establishment of engineering programs, Butler University, Indianapolis, IN, 1998.

Secretary, IEEE Education Society, 1998-2000.

Session Chair, “Experiences with New Engineering Curriculum Models,” 1996 Frontiers in Education Conference, Salt Lake City, Utah, November, 1996.

Member, Program Committee, University Government Industry Microelectronics Symposium, Austin TX June 1995.

Consultant to Supreme Court Panel of the State of Tennessee, “Technology in the Courts,” 1993-1994.

Chair, Advisory Committee, Vanderbilt US-Japan Program, 1992-1995.

General Chairman, Frontiers in Education Conference – FIE (Co-sponsored by IEEE and ASEE), 1992.

Session Chair (with Lynn Fuller), Microelectronics Education, Ninth Biennial University/Government/Industry Microelectronics Symposium, Melbourne, FL, June 1991.

Member, Steering Committee, International Conference on Frontiers in Education, 1990-2000.

Member, Technical Program Committee, Steering Committee, 22nd Southeastern Symposium on System Theory, 1990.

Member, Steering Committee, Southeastern Symposium on System Theory, 1989-1993.

Member, AdCom (elected) IEEE Education Society, 1989-1992.

Regional Education Activities Coordinator, IEEE Educational Activities Board, 1988-1990.

IEEE ABET Accreditation Visitor (program evaluator), 1988 – 1991 and 2001.

Vice President, IEEE North Florida Section, 1987.

Program Committee member and Session Organizer, IEEE Radiation Effects Conference, 1987.

University Advisory Committee (UAC) of Semiconductor Research Corporation, 1986-1996.

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Invited Session Chairman and Session Organizer, Special Session on “Intelligent Sensors,” IECON-86, IEEE Industrial Electronics Society Conference, Milwaukee, WI, Sept. 29 - Oct. 3, 1986.

Member SCEEE (Southeastern Center for Electrical Engineering Education) 1985 -1993; Director 1990-1992.

Chairman, Industrial Electronics Society, Intelligent Sensor Technical Committee, 1985-87; Co-chairman, 1987 - 1990.

Member, Florida Science and Technology Committee on Microelectronics and Materials, 1985-1987 (Appointed by Governor).

President, Southeastern Association of Electrical Engineering Department Heads, 1993; Member 1985-1993.

Associate General Chairman, Sixth Biennial University Government Industry Microelectronics Symposium, Auburn University, June 1985.

Invited Session Chairman and Organizer, “Industrial Support for Microelectronics Research,” Sixth Biennial University/Government/Industry Microelectronics Symposium, Auburn University, June 1985.

Chairman, IEEE Industrial Electronics Society, Intelligent Sensor Technical Committee, 1985-1987; co-chairman, 1987-1989.

Senior Member of the IEEE, Institute of Electrical and Electronic Engineers - 1984.

Steering Committee Chairman, University, Government, Industry Microelectronics Symposium, June 1984.

Member, National Electrical Engineering Department Heads Association, 1984 - 1993.

Elected President, Alabama Society of Professional Engineers, Auburn Chapter, 1980.

Elected Vice President, Alabama Society of Professional Engineers, Auburn Chapter, 1979.

Program Committee Member and Session Chairman, IEEE International Electron Devices Meeting, 1979.

Program Committee Member, Electronic Components Conference, 1979.

Member, IEEE Solid-State Circuits Committee - 1978.

Member ISHM (International Society for Hybrid Microelectronics) 1975-1982, Associate Editor of ISHM Journal.

Elected Vice President, ISHM, Tennessee Valley Chapter, 1977.

Vice President Electron Device Group, IEEE Lehigh Valley Section, Reading, Pennsylvania, 1975.

Area Manager, IEEE Lehigh Valley Section, Reading, Pennsylvania, 1974-75.

Consultant

To numerous Government and Industrial concerns in the areas of microelectronics and technology management.

VII. Patents

“Electromechanical Transducer Strain Sensor Arrangement and Construction,” pat. # 4,522,072, R. E. Sulouff, S. S. Hartin, K. B. Cook,D. V. Kerns, Jr., J. L. Davidson, and K. O. Warren, issued 1985.

“Programmable Gain Feedback Amplifier,” pat. # 4,551,685, D. V. Kerns, Jr. and D. V. Kerns, Sr., issued 1985.

“Apparatus for Enhancing Visual Perception of Selected Objects in Recreational and Sporting Activities,” pat. #

5,592,245, J. P. Moore and D. V. Kerns, Jr., issued 1997.

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“Chemical Sensor Utilizing a Chemically Sensitive Electrode in Combination with Thin Diamond Layers, pat #

5,656,827, W.P. Kang, J. L. Davidson, D. V. Kerns, Jr., issued 1997.

“Mold Method for Forming Vacuum Field Emitters and Method for Forming Diamond Emitters,” pat. # 6,132,278, W. P. Kang, J. L. Davidson, and D. V. Kerns Jr., issued 2000.

“Eyeglass Lens with Multiple Optical Zones Having Varying Optical Properties for Enhanced Visualization of Different

Scenes in Outdoor Recreational Activity,” pat. # 6,250,759, D. V. Kerns, Jr. and J. P. Moore, issued 2001.

“Contact Lens with Filtering for Outdoor Sporting and Recreational Activities,” pat. # 6,305,801, D. V. Kerns, Jr. and J. P. Moore, issued 2001.

“Transmission Cathode for X-ray Production,” pat. #6,333,968, R. Whitlock, M. I. Bell, D. V. Kerns Jr., S. E. Kerns, J. L. Davidson, and W. P. Kang, issued 2001.

Continuation in Part: “Eyeglass Lens with Multiple Optical Zones Having Varying Optical Properties for Enhanced Visualization of Different Scenes in Outdoor Recreational Activity,” pat. #6,623,116, D. V. Kerns, Jr. and J. P. Moore, issued 2003.

“Diamond Diode Devices with a Diamond Microtip Emitter, pat. #6,762,543, W. P. Kang, J. L. Davidson, and D. V. Kerns, Jr., issued 2004.

“Diamond Triode Devices with a Diamond Microtip Emitter”, pat. #7,256,535, J. L. Davidson, W. P. Kang, D. V.

Kerns, Jr., and M. E. Howell, issued 2007.

“Micro-patterned Diamond Microtip Vacuum Field Emitter Diode, Triode, Sensors, Displays, and Other Related

Device Structures,” W. P. Kang, J. L. Davidson, and D. V. Kerns, Jr., filed June 1997.

VIII. Selected Invited Talks, Presentations, and Technical Reports

· “Effects of Electron Bombardment on the Noise Properties of BJTs,” D. V. Kerns, Jr., and T. M. Chen, invited paper at Symposium on Noise in Electronic Materials and Devices, University of Florida, December 10-13, 1972.

· “Thin-Films in Microelectronics,” D. V. Kerns, Jr., presented to IEEE Chapter, Bucknell University, October 24, 1972.

· “A Comparison of Proposed Integrated Polarity Guard with Diode Bridge Design,” D. V. Kerns and A. A. Yiannoulos, Bell Laboratories Technical Memorandum, September 24, 1974.

· “Saturated Inverted Transistors as Variable Loss Elements in Matched Attenuators,” D. V. Kerns, Bell Telephone

Laboratories Technical Memorandum, October 1974.

· “I2L Integration of the PROCON Microprocessor - Technology Considerations,” D. V. Kerns, Bell Laboratories Technical Memorandum, May 24, 1975.

· “Partitioning Considerations for Custom I2L Integration of the PROCON Microprocessor,” D. V. Kerns, Bell

Laboratories Technical Memorandum, June 26, 1975.

· “Stability and Harmonic Distortion in an Integrated Power Amplifier,” D. V. Kerns and C. G. Metzler, Bell Laboratories Technical Memorandum, September 15, 1975.

· “High Energy Laser Target Board System Study,” L. Pinson, D. V. Kerns, Jr., and H. T. Nagle, U. S. Army Research Office Technical Report, May 1976.

· “Thin Film Electronic Devices on Flexible Substrates,” D. V. Kerns, U. S. Army Research Office Technical Report, October 1976.

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· “An Approach to Flexible Thin-Film Microcircuits,” D. V. Kerns, Second Annual Hybrid Microelectronics Planning Conference, Treasure Island, FL, January 29-31, 1979.

· “Thin-Film Microcircuits on Flexible Substrates,” D. V. Kerns, Jr., J. M. Kull, and V. W. Ruwe, U.S. Army Missile Research and Development Command Technical Report E-79-9, January 24 1979.

· “Characterization and Modeling of Radiation Effects on NASA/MSFC Semiconductor Devices,” D. V. Kerns and K. B. Cook, NASA Technical Report No. NAS8-32634, 1979.

· “Development of Technologies and Procedures for Advanced Microcircuit Prototype Fabrication,” D. V. Kerns, B. D. Carroll, K. B. Cook and T. D. Slagh, NASA Technical Report No. NAS8-32633, 1979.

· “Cost Optimization in Low Volume VLSI Circuits,” K. B. Cook and D. V. Kerns, NASA, Technical Report No. NAS8-32633, 1979.

· “The Development of Thin Film Active Devices Using a Subtractive Fabrication Process,” P. D. Foshee, D. V. Kerns, K. B. Cook and V. W. Ruwe, Southeastcon, Nashville, TN, 1980.

· “An Evaluation of Particle Impact Noise Detection (PIND) Testing,” D. V. Kerns, et. al., U.S. Army Missile Command, Army Technical Report RS-81-7, August 1981.

· “Gate Arrays - The Technology for the „80‟ s,” D. V. Kerns, presented at Southcon 1982, Atlanta, GA, January 20, 1982.

· “Manufacturing Methods and Technology for Electronics Computer-Aided Manufacturing,” D. V. Kerns co-authored section on Integrated Circuit Manufacturing Architecture (IDEF), Battelle Columbus Laboratories Technical Report, Project No. 3801075, January 1983.

· “Electrical Engineering in the FAMU/FSU College of Engineering,” D. V. Kerns, IEEE Section Meeting, Panama City, FL, May 1985.

· “The History and Economics of Microelectronics,” D. V. Kerns, presented at the Inter-University Centre of Postgraduate Studies, Dubrovnik, Yugoslavia, June 23 - July 4, 1986.

· “Silicon Accelerometer Technology,” J. L. Davidson and D. V. Kerns, presented at IEEE Industrial Electronics Conference, Milwaukee, WI, Sept. 29 - Oct. 3, 1986.

· “A New Approach for Stuck-at-Fault Simulation in Synchronous Digital Systems,” L. Tung, D. Kerns, M. Mills, presented at the International Computer Symposium, Taiwan, Republic of China, December 15-19, 1986.

· “Solid State Sensors,” D. V. Kerns, presented at Duke University, Dept. of Electrical Engineering (invited talk), 1987.

· “A Simulation of Stuck-at-Fault in Synchronous Digital Systems for Fault Detection,” L. Tung, D. Kerns, M. Mills, presented at Twentieth Annual Simulation Symposium, Tampa, FL, March 11-13, 1987.

· “Cooperative Research Consortia,” D. V. Kerns and S. E. Kerns, presented at the Inter-University Centre of Postgraduate Studies, Dubrovnik, Yugoslavia, July 6-10, 1987.

· “An Approach for Developing University Curricula in Microelectronics Manufacturing Engineering,” D. V. Kerns, Proceedings of the Summer Program, Inter-University Centre of Postgraduate Studies, Dubrovnik, Yugoslavia, July 1987.

· “Microelectronics Research at Vanderbilt University,” presented at Oak Ridge National Labs, Oak Ridge, TN, November 30, 1988.

· “Effects of SEU on I2L Microprocessors,” D. V. Kerns and S. E. Kerns, APTEK Technical Report, 1989.

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· “Single Event Effects on CMOS SOI,” S. E. Kerns, L. W. Massengill, and D. V. Kerns, Texas Instruments Technical Report, 1989.

· “SEU Simulations for CMOS/SOI SRAMs,” S. E. Kerns, L. W. Massengill, D.V. Kerns, and M. L. Alles, IEEE Conference on Nuclear Science and Radiation Effects, 1989.

· “Circuit and Process Design for Radiation-Hardened Integrated Circuits,” S. E. Kerns and D. V. Kerns, Jr., 3-Day Short Course, Analog Devices, Limerick, Ireland, January 3-5, 1989.

· “SEU Models for CMOS/SOI,” S. E. Kerns, L. W. Massengill, D. V. Kerns, Jr., and M. L. Alles, IEEE Annual Conference on Nuclear and Space Radiation Effects, Marco Island, FL July 1989.

· “Characterization of Single-Event Vulnerability of CMOS-SOI Transistors,” M. L. Alles, S. E. Kerns, L. W. Massengill, D. V. Kerns, Jr., T. W. Houston, H. Lu, and L. R. Hite, Government Microcircuits Applications Conference, Kissimmee, FL, November 1989.

· “Single-Event Upset Natural Environments,” D. V. Kerns, Charles Stark Draper Laboratory, Cambridge, MA, January 28-29, 1991.

· “X-Ray Process-Induced Defects,” D. V. Kerns, Louisiana State University, July 25-26, 1991, Baton Rouge, LA.

· “Management of Technology at Vanderbilt,” D. V. Kerns, Keynote address, Lewis Society Annual Meeting, Nashville, TN, November 8, 1991.

· “The Continuing Education of Engineers in Japanese High-Technology Companies,” D. V. Kerns and C. Flatt, US-Japan Center Technical Report, Vanderbilt University, 1992.

· “Radiation Effects Specializations at Vanderbilt University,” Arnold Air Force Base, Tullahoma, TN, March 1993.

· “Reliability and Performance Degradation of Advanced Commercial CMOS Technologies Using X-ray Lithography,” S. E. Kerns, M. Yaktieen, D. V. Kerns, et. al., presentation at University of California at Berkeley, July 22, 1993.

· “Interdisciplinary Engineering Programs,” VUSE Committee of Visitors, Vanderbilt University, November 12, 1993.

· “A Model for International Technology Partnerships,” D. V. Kerns, Jr., American Society for Engineering Education Annual Conference, Edmonton, Canada, June 26-29, 1994.

· “Development of a U.S.-Japan Center for Technology Management,” D. V. Kerns, American Society for Engineering Education Annual Conference, Edmonton, Canada, June 26-29, 1994.

· “Development of Diamond Based Power Microelectronics,” J. L. Davidson, W. P. Kang, Y. Gurbuz, D. V. Kerns, L. Davis, K. Holmes, L. Jiang, P. Venkata, A. Wisitsora-at, and M. Howell, (Invited), presented at Material Research Society, 1997.

· “Diamond Thin-Film Gas Sensors,” D. V. Kerns, W. P. Kang, and J. L. Davidson, Southeastern Workshop on Mixed- Signal VLSI and Monolithic Sensors, Oak Ridge National Laboratory, Oak Ridge, Tennessee, April 3-4, 1997.

· “Diamond Film Technologies for Sensors and Field Emitters,” D. V. Kerns, W. P. Kang, and J. L. Davidson, presented at Southeastern Workshop on Mixed-Signal VLSI and Monolithic Sensors, Oak Ridge National Laboratory, Oak Ridge, TN, April 3-4, 1997.

· “Engineering Education in the United States,” D. V. Kerns and S. E. Kerns, presented at the Universite de Metz / Supelec, Metz, France, May 22, 1997.

· “Deposited Diamond Films and their Application in Sensors and Field-Emitters,” D. V. Kerns, W. P. Kang, and J. L. Davidson, (Invited) presented at the Universite de Metz / Supelec, Metz, France, May 22, 1997.

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· “On the Fabrication and Behavior of Diamond Microelectromechanical Sensors (DMEMS),” J. L. Davidson, W. P. Kang, L. Davis, K. Holmes, M. Howell, D. V. Kerns, and B. Henderson, International Symposium on Diamond Materials of the 1997 Joint International Meeting, Paris, France, August 31-September 5, 1997.

· “The Effects of I-Diamond Thickness on Gas Sensing Performance of the Diamond Based MIS Gas Sensor,” Y. Gurbuz, G. Rong, W. P. Kang, J. L. Davidson, D. V. Kerns, and B. Henderson, International Symposium on Diamond Materials of the 1997 Joint International Meeting, Paris, France, August 31-September 5, 1997.

· “Integration of Diamond Film with Metal-Oxide Electrode for Gas Sensor Applications,” Y. Gurbuz, W. P. Kang, J. L. Davidson, D. V. Kerns, and B. Henderson, Chemical and Biological Sensors and Analytical Electrochemical Methods Symposium of the 1997 Joint International Meeting, Paris, France, August 31-September 5, 1997.

· “Enhancement of Field Emission Characteristics of Micropatterned Polycrystalline Diamond Tips,” A. Wisitsora-at, W. P. Kang, J. L. Davidson, Y. Gurbuz, and D. V. Kerns, International Symposium on Diamond Materials of the 1997 Joint International Meeting, Paris, France, August 31-September 5, 1997.

· “Method for Evaluating Suitability of COTS Devices for Use in Radiation Environments,” S. E. Kerns, P. P. Karhade, B. L. Bhuva and D. V. Kerns, European Conference on Radiations and Their Effects on Components and Systems, Canes, France, September 1997.

· “Silicon-Based Optical Interconnect,” D. V. Kerns and S. E. Kerns, (Invited), presented at Texas Instruments Central Research Labs, Dallas, TX, October 1997.

· “An Optical Interconnect System for Silicon Integrated Circuits,” D. V. Kerns and S. E. Kerns (Invited), presented at Motorola, Austin, TX, October 1997.

· “An All Silicon Based Optical Interconnect Technology,” D. V. Kerns and S. E. Kerns, SRC Annual Program Review –

Rensselaer Polytechnic Institute, Troy, NY, November 17-21, 1997.

· “Effects of Fast Neutrons on Electrical Parameters and Light Emission from N-Channel Silicon JFETs,” N. Akil, A. Hoffmann, J.-P. Charles, S. Kerns and D. V. Kerns, Jr., 2nd French-Italian Symposium on SiO2 and Advanced Dielectrics, L‟ Aquila, Italy, June 1998.

· “Electroluminescence under Avalanche in Silicon Junctions of Micro-Electronic Structure,” N. Akil, A. Hoffmann, J.-P. Charles, S. Kerns and D. V. Kerns, Jr., 3rd International Conference on Electric Charge in Solid Insulators, Tours, France, July 1998.

· “Developing Engineering Leadership Through an Undergraduate Minor in Management of Technology,” D. V. Kerns, Jr., S. E. Kerns and R. T. Nash, American Society for Engineering Education, Seattle, WA, July 1998.

· “A Total-Dose Radiation Hard Diamond MIS Gas Sensor,” D. V. Kerns, Jr., W. P. Kang, J. L. Davidson, Q. Zhou, Y. Gurbuz and S. E. Kerns, IEEE Nuclear Science and Radiation Effects Conference, Newport Beach, CA, July 1998.

“Field Emission Enhancement of High sp2 Boron-Doped Diamond Tips with Surface Treatment,” A. Wisitsora-at, W. P. Kang, J. L. Davidson, Y. Gurbuz, D. V. Kerns, 1998-9th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide, Crete, Greece, September 13-18, 1998.

“A PECVD diamond device for chemical gas sensing applications,” Y. Gurbuz, W. P. Kang, J. L. Davidson, D. V. Kerns, and B. Henderson, 1998-9th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide, Crete, Greece, September 13-18, 1998.

“Diamond as an Active Sensor Material,” J. L. Davidson, W. P. Kang, Y. Gurbuz, K. C. Holmes, L. G. Davis, A. Wisitsora-at, D. V. Kerns, R. L. Eidson, T. Henderson, South African Conference on Diamond Films, Cape Town, South Africa, October 1998.

· “Silicon-Based Optical Interconnect,” D. V. Kerns and S. E. Kerns, Invited presentation, SEMATECH, Austin, Texas, October 1998.

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· “An Optical Interconnect System for Silicon Integrated Circuits,” D. V. Kerns and S. E. Kerns, Invited presentation, Motorola, Austin, Texas, October 1998.

· “An All Silicon Based Optical Interconnect Technology,” D. V. Kerns and S. E. Kerns, SRC Annual Program Review –

Rensselaer Polytechnic Institute (RPI), Troy, NY, November 1998.

· “CVD Diamond for Electronics and Sensing Devices in Extreme Environment,” J. L. Davidson, W. P. Kang, Y. Gurbuz, K. Holmes, T. Henderson and M. Christopher, NAMA/JPL Conference on Electronics for Extreme Environments, 1999.

“Challenges in the Migration of Commercial MEMS Accelerometers to Military Applications,” D. V. Kerns, Jr. and S. E. Kerns, Sensors Expo, Baltimore, MD, May 1999.

“Total Dose and Hot Carrier Effects on Silicon Light Emitting Devices,” D. Jiang, M. de la Bardonnie, H. Barnaby, S. Kerns, D. V. Kerns, R. D. Schrimpf, B. L. Bhuva, P. Mialhe, A. Hoffmann, J.P. Charles, IEEE Nuclear and Space Radiation Effects Conference, Norfolk VA, July 1999.

“Optical Evidence of Damage Localization in Irradiated and Hot-Carrier-Stressed BJTs,” S. Kerns, D. V. Kerns, D. Jiang, R. D. Schrimpf, H. Barnaby, M. de la Bardonnie, P. Mialhe, A. Hoffmann, J.-P. Charles, European Conference on Radiations and Their Effects on Components and Systems, Chinon France, September 1999.

“Effects of Fast Neutron on JFETs Junction Electrical Parameters and Characterization of Defects Induced in Passivation Oxide through the Analysis of Interference of Silicon Light Emission,” A. Hoffman, J.-P. Charles, S. E. Kerns, D. V. Kerns, P. Miahle, European Conference on Radiations and Their Effects on Components and Systems, Chinon France, September 1999.

“Development of Diamond Microtip Field Emitter Devices,” W. P. Kang, J. L. Davidson, A. Wisitsora-at, and D.V. Kerns, 6th International Symposium on Diamond Materials, 1999 Joint International ECS Meeting, Honolulu, Hawaii, October 1999.

“Electrical Engineering for Non-Majors: A New Initiative for the Next Millennium,” D. V. Kerns, Jr., J. D. Irwin, and S. E. Kerns, Frontiers in Education Conference, San Juan, PR, November 1999.

“Effect of Charge Distribution on Burnout Threshold of Hardened Power MOSFET,” C. Salame , S. Kerns, D. V. Kerns, F. Pelanchon, P. Mialhe, A. Hoffmann, and J.-P., Charles, The European Space Components Conference- ESCCON 2000, Theme: Component Engineering and Technology, ESTEC, Noordwijk, The Netherlands, March 20 - 24, 2000.

“Comparative Analysis of Metal and Optical Interconnect Technology,” D. Jiang, B. L. Bhuva, D. V. Kerns, Jr., and S. E. Kerns, IEEE International Interconnect Technology Conference, Santa Clara, CA, May 2000.

“Comparative Analysis of Metal and Optical Interconnect Technology,” D. Jiang, B. L. Bhuva, D. V. Kerns, Jr., and S. E. Kerns, Proceedings of IEEE International Interconnect Technology Conference, Burlingame, CA, June 2000.

“Circuit Technique for Threshold Voltage Stabilization Using Substrate Bias in Total Dose Environments,” J. K. Shreedhara, H. J. Barnaby, B. L. Bhuva, A. Raparla, D. V. Kerns, Jr., and S. E. Kerns, IEEE Nuclear and Space Radiation Effects Conference, Reno, NC, July 2000.

“Design and Process Issues Affecting Performance of Optical Interconnects on ICs,” B. Bhuva, D. Jiang, D. Kerns, Jr., and S. Kerns, Proceedings of Conference on Process Integration and Device Technology, Santa Clara, CA, September 2000.

“Feasibility Study for Si-based Optical VLSI Interconnects,” Chatterjee, B. Bhuva, D. Jiang, J. Stankus, D. Kerns, Jr., and S. Kerns, Proceedings of SRC TechCon, Phoenix, AZ, September 2000.

“Field Emission Vacuum Integrated Circuits (FEVICS) for Ultra-High Speed, Radiation-Immune Electronic System,” J. L. Davidson, W. P. Kang, D. V. Kerns, and S. E. Kerns, Final Report to National Reconnaissance Office, DII Contact Number: NR 0000-99-C-0096, November 2000.

14

“Field Emission Vacuum Integrated Circuits (FEVICS) for Ultra-High Speed, Radiation-Immune Electronic System,” J. L. Davidson, W. P. Kang, D. V. Kerns, and S. E. Kerns, Technology Seminar Presentation at National Reconnaissance Office, Chantilly VA, November 3, 2000.

“All-Silicon Optical Technology for Contactless Testing of Integrated Circuits,” International Conference on Electrical and Electronics Engineering (ELECO), Kasim, Bursa, Turkey, November 7-11, 2001.

“The Olin College - Georgia Tech Lorraine Undergraduate Engineering Education Partnership,” ASEE/SEFI/TUB International Colloquium, Berlin, Germany, October 1-4, 2002.

“The Engineering Education Societies of the World,” International Conference on Engineering and Computer Education, Sao Paulo, Brazil, March 2003.

"Diamond Vacuum Field Emission Devices," W. P. Kang, J. L. Davidson, Y. M. Wong, A. Wisitsora-at, and D .V. Kerns, 203rd Electrochemical Society Meeting, paper 508, Paris, France, April 27-May 2, 2003.

“American Society for Engineering Education – Promoting Excellence in Engineering Education,” IEEE Nordic Education Society Chapter Workshop, Copenhagen, Denmark, September 2003.

"A Solid-State Hydrocarbon Sensor for Environment Applications," Y. Gurbuz, W. P. Kang, J. L. Davidson, and D. V. Kerns, 2nd IEEE International Conference on Sensors, paper 1169, Toronto, Canada, October 22-24, 2003.

“Design Centered Engineering and Technology Education,” D. Kerns and S. Kerns, Int. Conf. on Information Technology Based Higher Education and Training, Istanbul, Turkey, May 31-June 2, 2004.

“Designing from a Blank Slate – The Development of the Initial Olin College Curriculum,” S. E. Kerns, R. K. Miller, and D. V. Kerns, NAE 2020 Summit, Washington, DC, July 2004.

“Edge-Shaped Diamond Field Emission Arrays,” R. S. Takalkar, J. L. Davidson, W. P. Kang, A. Wisitsora-at, and D. V. Kerns, 17th International Vacuum Nanoelectronics Conference, Cambridge, MA, July 11-16, 2004.

“A Design-Focused Engineering and Technology Curriculum,” D. V. Kerns, Jr. and S. E. Kerns, 3rd ASEE International Colloquium of Engineering Education (ICEE 2004), Beijing, People‟ s Republic of China, September 7-10, 2004.

“Diamond and Carbon Derived Field Emission Vacuum Microelectronics,” W. P. Kang, J. L. Davidson, A. Wisitsora-at, Y. M. Wong, R. Takalkar, and D. V. Kerns, Diamond 2004, Riva Del Garda, Trentino, Italy, September 12-17, 2004.

“Olin College – Developing New Engineering Curricula from Basic Principles,” D. V. Kerns and S. E. Kerns, 33.

International Symposium IGIP/IEEE/ASEE, Fribourg, Switzerland, September 27-30, 2004.

“Enhanced Electron Field Emission from Micropatterned Pyramidal Diamond Tips Incorporating CH4/H2/N2 Plasma-Deposited Nanodiamond,” K. Subramanian, W.P. Kang, J.L. Davidson, R.S. Takalkar, B.K. Choi, M. Howell, and D.V. Kerns, Diamond 2005 - 16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides, Toulouse, France, Sept. 11-16, 2005.

“Design and Fabrication of Single-Chip Carbon Nanotubes Vacuum Field Emission Differential Amplifier,” Y. M. Wong, W. P. Kang, J. L. Davidson, B. K. Choi, D. V. Kerns, and J. H. Huang, 18th International Vacuum Nanoelectronics Conference, Oxford, UK, July 10-14, 2005.

“Development of Carbon Nanotubes Vacuum Field Emission Devices”, W. P. Kang, Y. M. Wong, J. L. Davidson, D. V. Kerns, J. H. Huang, and K. F. Galloway, presented at Nanotech 2007, Santa Clara, CA, USA, May 20-24, 2007.

“Integrated Carbon Nanotube Field Emission Differential Amplifier: Modeling and Measurement of the Common Mode

Rejection Ratio”, Y. M. Wong, W. P. Kang, J. L. Davidson, B. K. Choi, J. H. Huang and D. V. Kerns, , presented at New Diamond and Nano Carbons 2007, Osaka, Japan, May 28-31,2007.

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“AC Performance of a Novel Carbon Nanotube Vacuum Field Emission Differential Amplifier IC”, Y. M. Wong, W. P. Kang, J. L. Davidson, D. V. Kerns, and J. H. Huang, , presented at 20th International Vacuum Nanoelectronics Conference, Chicago, IL., USA, July 8-12, 2007.

“Carbon Nanotubes Vacuum Field Emission Differential Amplifier with High Performance Characteristics”, Y. M.

Wong, W. P. Kang, J. L. Davidson, D. V. Kerns and J. H. Huang, , presented at Diamond 2007, Berlin, Germany, September 9-14, 2007.

IX. Selected Refereed Publications and Proceedings

· “The Effects of Electron Bombardment on the Shot Noise of Silicon Junction Transistors,” D. V. Kerns, Jr. and T. M. Chen, IEEE Transactions on Nuclear Science, NS-18(5), pp. 37-40, 1971.

“The Influence of Biasing Circuits on Photomultiplier Tube Output Noise Spectra and Transfer Functions,” D. V. Kerns, T. M. Chen, and S. T. Hsu, IEEE Transactions on Electron Devices, ED-20(4), pp. 341-347, 1973.

“Output Noise Characteristics of Vacuum Photodiode Circuits,” Garry Schevey and D. V. Kerns, Jr., IEEE Transactions on Instrumentation and Measurements, IM-22(2), pp. 174-175, 1973.

“Effects of Electron Bombardment on Equivalent Input Noise Sources in Bipolar Junction Transistors,” R. M. Garvey, D. V. Kerns, and T. M. Chen, Proceedings of Southeastcon 1974, and presented in Orlando, Florida, pp. 40-44, April 1974.

“Microelectronics at Auburn University,” K. B. Cook and D. V. Kerns, Proceedings of Southeastcon 1976, and presented at Clemson, SC, pp. 273-274, April 1976.

“The Effect of Base Contact Position on the Relative Propagation Delays of the Multiple Outputs of an I2L Gate,” D. V. Kerns, IEEE Journal of Solid State Circuits, 11(5), pp. 712-717, October 1976.

“The Hybrid Integration of a Multistage Active Bandpass Filter/Amplifier,” K. B. Cook, D. V. Kerns, H. T. Nagle, T. D. Slagh, and V. W. Ruwe, IEEE Transactions on Parts, Hybrids and Packaging, 12(4), pp. 336-344, December 1976.

“Computer-Aided Thermal Analysis of a Hybrid Multistage Active Bandpass Filter/Amplifier,” K. B. Cook, D. V. Kerns, H. T. Nagle, T. D. Slagh, and V. W. Ruwe, IEEE Transactions on Parts, Hybrids and Packaging, 12(4), pp. 344- 350, December 1976.

“Saturated Inverted Transistor Modeling for Small Signal Applications,” D. V. Kerns, IEEE Journal of Solid State Circuits, 12(3), pp. 303-310, June 1977.

“A Zener Diode Model for Computer Circuit Simulations,” D. V. Kerns, Jr., International Journal of Electronics, 45(4), pp. 1-8, 1978.

“A Circuit Analog Model of Plant Tissue,” F. J. Molz, D. V. Kerns, C. M. Peterson, and J. H. Dane, Plant Physiology, 64(5), pp. 712-716, 1979.

“An Integrated Circuit Current Source with a Low Temperature Coefficient,” D. V. Kerns, Jr., International Journal of Electronics, 46(4), pp. 445-448, 1979.

“Thin-Film Microcircuits on Flexible Substrates,” D. V. Kerns, J. M. Kull, and V. M. Ruwe, International Journal for Hybrid Microelectronics, II(1), pp. 1-58, Spring 1979.

“A Low Cost Thin-Film Microcircuit Process,” D. V. Kerns, J. M. Kull, and V. W. Ruwe, IEEE Transactions on Components, Hybrids and Manufacturing Technology, 2(2), pp. 218-221, June 1979.

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“The Effect of Base Contact Position on the Relative Propagation Delays of the Multiple Outputs of an I2L Gate,” D. V. Kerns, in Integrated Injection Logic, Jim Smith, ed., IEEE Press, pp. 180-186. (This paper was originally in a refereed journal, IEEE Journal of Solid State Circuits, SC-11(5), 1980.

“Integrated MOS Temperature Sensor,” R. C. Jaeger and D. V. Kerns, Proceedings of Southeastcon 1980, and presented, Nashville, TN, pp. 161-163, April 1980.

“A Thick-Film Hybrid Laser Target Board,” D. V. Kerns, Jr. and H. T. Nagle, IEEE Transactions on Components, Hybrids and Manufacturing Technology, 3(3), pp. 436-441, September 1980.

“Microcomputer Based Laser Target Board Controller,” D. V. Kerns, L. E. Hand, and H. T. Nagle, IEEE Transactions of Aerospace and Electronic Systems, 18(4), pp. 358-368, July 1982.

“Hybrid Silicon Wafer Scale Packaging Technology,” R. Johnson, D. Kerns, et. al., Proceedings of the 1986 IEEE International Solid State Circuits Conference, pp. 166-167, and presented Anaheim, CA, February 1986.

“Hybrid Wafer-Scale Integration Packaging Technology,” W. Johnson, J. L. Davidson, R. C. Jaeger, and D. V. Kerns, Proceedings of the IEEE Southcon 1986, March 1986.

“Optimization of the Peaking Current Reference,” D. V. Kerns, IEEE Journal of Solid State Circuits, 21(4), pp. 587-590, August 1986.

“Silicon Hybrid Wafer-Scale Package Technology,” R. W. Johnson, J. L. Davidson, R. C. Jaeger, and D. V. Kerns, IEEE Journal of Solid State Circuits, 21(5), October 1986, pp. 845-851.

“An Algorithm to Generate Complete Test Sets for Stuck-At Faults in Combinational Logic Circuits,” L. J. Tung and D. V. Kerns, Journal of the Franklin Institute, 325(1), pp. 133-142, 1988.

“Enhanced Peaking Current Reference,” D. V. Kerns, IEEE Journal of Solid State Circuits, 23(3), pp. 869-872, June 1988.

“Microelectronic Manufacturing Engineering Curriculum Development,” IEEE Transactions on Education, 32(1), pp. 4- 11, February 1989.

“The Silicon Diode Under Avalanche Breakdown as a Light Emitting Source for VLSI Optical Interconnect,” D. V. Kerns, K. Arora, S. Kurinec, and W. Power, Proceedings of the 21st Southeastern Symposium on System Theory, pp. 677-680, March 1989.

“Piezoresistive Effects in Thick Film Resistors for Strain-Sensing Applications,” D. V. Kerns, Jr., W. P. Kang, and A. R.

Al-Ali, Proceedings of IEEE Southeastcon, pp. 348-350, April 1989.

“Utilization of Electroluminescence from Avalanche P-N Junctions for Optical Testing of Silicon Integrated Circuits,” S. K. Kurinec, M. A. Powell, L. F. Fuller, D. V. Kerns, and K. Arora, Proceedings of the Eighth Biennial University, Government, Industry Microelectronics Symposium, pp. 80-82, June 1989.

“Characterization of Single-Event Vulnerability of CMOS-SOI Transistors,” M. L. Alles, S. E. Kerns, L. W. Massengill, D. V. Kerns, Jr., T. W. Houston, H. Lu, and L. R. Hite, Proceedings of the Government Microcircuits Applications Conference, pp. 397-400, November 1989.

“Ion Induced Charge Collection in GaAs MESFETs,” A. Campbell, A. Knudson, D. McMorrow, W. Anderson, J. Roussos, S. Espy, S. Buchner, K. Kang, D. Kerns, and S. Kerns, IEEE Transactions on Nuclear Science, 36(6), pp. 2292- 2299, December 1989.

“Model for CMOS/SOI Single-Event Vulnerability,” S. E. Kerns, L. W. Massengill, D. V. Kerns, Jr., and M. L. Alles,

IEEE Transactions on Nuclear Science, 36(6), pp. 2305-2310, December 1989.

“Single-Event Charge Enhancement in SOI Devices,” L. W. Massengill, D. V. Kerns, S. E. Kerns, and M. L. Alles, IEEE Electron Device Letters, 11(2), pp. 98-99, February 1990.

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“Evaluation and Design Optimization of the Piezoresistive Gauge Factor of Thick Film Resistors,” C. Song, D. V. Kerns, J. L. Davidson, W. Kang, and S. Kerns, Proceedings of IEEE Southeastcon 1991, pp.1106-1109, April 1991.

“Measurement of Metal Migration on Thick Film Piezoresistors and Their Termination,” C. Song, D. V. Kerns, J. L. Davidson, W. Kang, S. Kerns, and D. L. Kinser, Proceedings of IEEE Southeastcon 1991, pp. 1110-1112, April 1991.

“Diamond Microelectromechanical Pressure Sensor,” J. L. Davidson, D. R. Wu, W. P. Kang, D. L. Kinser, and D. V. Kerns, Proceedings of the 2nd International Symposium on Diamond Films, May 1994.

“Pressure Microsensor Fabricated on Polycrystalline Diamond,” J. L. Davidson, D. R. Wur, W. P. Kang, D. Kinser, D. V. Kerns, Proceedings of the 185th Meeting of the Electrochemical Society, May 1994.

“Polycrystalline Diamond Pressure Microsensor,” J.L. Davidson, D. R. Wur, W. P. Kang, D. Kinser, and D. V. Kerns, Proceedings of Second International High Temperature Electronics Conference, June 1994.

“Diamond Film Based Structure for Gas Sensing Applications,” W. P. Kang, Y. Gurbuz, J. L. Davidson, and D. V. Kerns, Technical Digest IEEE Proceedings of Solid State Sensor and Actuator Workshop, pp. 172-175, July 1994.

“A Polycrystalline Diamond Thin Film Based Hydrogen Sensor,” W. P. Kang, Y. Gurbuz, T. Stults, J. L. Davidson, and D. V. Kerns, Technical Digest of Fifth International Meeting on Chemical Sensors, pp. 540-543, July 1994.

“Microelectronic Pressure Sensor with Diamond Piezoresistors on Diamond Diaphragm,” J. L. Davidson, D. R. Wu, W. P. Kang, D. L. Kinser, and D. V. Kerns, Proceedings of the Fourth International Conference on New Diamond Science and Technology, July 1994.

“A New Hydrogen Sensor Using a Polycrystalline Diamond Based Schottky Diode,” W. P. Kang, Y. Gurbuz, J. L. Davidson, and D. V. Kerns, Journal of the Electrochemical Society,141(8), pp. 2231-2234, August 1994.

“Development of a Minor Program of Study in Management of Technology,” D.V Kerns, Jr., Proceedings of the 24th

Annual Frontiers in Education Conference, pp. 375-377, November 1994.

“A Polycrystalline Diamond Thin Film Based Hydrogen Sensor,” W. P. Kang, Y. Gurbuz, J. L. Davidson, and D. V. Kerns, Sensors and Actuators, 25(1-3), pp. 421-425, April 1995.

“Thin Film Diamond Diode Chemical Gas Sensors,” W. P. Kang, Y. Gurbuz, J. L. Davidson, D. R. Wu, and D. V. Kerns, Proceedings of the 186th Electrochemical Society Meeting, (4th International Symposium on Diamond Materials), Reno, Nevada, pp. 595-600, May 1995.

“A Novel-Low Field Electron-Emission Polycrystalline Diamond Microtip Arrays for Sensor Applications,” W. P. Kang, J. L. Davidson, Q. Li, J. F. Xu, D. L. Kinser, and D. V. Kerns, Technical Digest of the 8th International Conference on Sensors and Actuators, 2, pp. 182-185, June 1995.

“Diamond Microelectronic Gas Sensors,” Y. Gurbuz, W. P. Kang, J. L. Davidson, D. L. Kinser, and D. V. Kerns, Technical Digest of the 8th International Conference on Sensors and Actuators, 1, pp. 745-748, June 1995.

“Temperature Dependence and Effect of Series Resistance on the Electrical Characteristics of a Polycrystalline

Diamond Metal-Insulator-Semiconductor Diode,” W. P. Kang, T. Stults, J. L. Davidson, and D. V. Kerns, Journal of Applied Physics, 78(2), pp. 1101-1107, July 1995.

“Patterned Polycrystalline Diamond Microtip Vacuum Diode Arrays,” W. P. Kang, J. L. Davidson, J. F. Xu, D. L. Kinser, and D. V. Kerns, International Applied Diamond Conference Proceedings, pp.37-40, August 1995.

“High Sensitivity and Wide Temperature Tolerance Hydrogen Gas Sensors Utilizing PECVD Diamond Technology,” Y. Gurbuz, W. P. Kang, J. L. Davidson, D. V. Kerns, and B. Henderson, Proceedings International Applied Diamond Conference Proceedings, pp. 87-90, August 1995.

“Boron-doped Polycrystalline Diamond Films for Strain Sensing Applications,” D. Wur, J. L. Davidson, W. P. Kang, and D.V. Kerns, International Applied Diamond Conference Proceedings, pp. 107-111, August 1995.

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“Polycrystalline Diamond Pressure Microsensor,” J. L. Davidson, D. R. Wur, W. P. Kang, D. L. Kinser, and D. V. Kerns, Diamond and Related Materials, 5(1), pp. 86-92, January 1996.

“Micro-Patterned Polycrystalline Diamond Field Emitter Vacuum Diode Arrays,” W. P. Kang, J. L. Davidson, M. Howell, B. Bhuva, D. L. Kinser, D.V. Kerns, Q. Li, and J.F. Xu, Journal of Vacuum Science Technology B, 14(3), pp. 2068-2071, May/June 1996.

“A Novel-Low Field Electron-Emission Polycrystalline Diamond Microtip Array for Sensor Applications,” W. P. Kang, J. L. Davidson, Q. Li, J. F. Xu, D. L. Kinser, and D. V. Kerns, Sensors and Actuators A, 54, pp. 724-727, June 1996.

“A Novel High Temperature Diode for Oxygen Gas Detection,” Y. Gurbuz, W. P. Kang, J. L. Davidson, and D. V. Kerns, Proceedings of the Third International High Temperature Electronics Conference, June 1996.

“Diamond Microelectronic Gas Sensors,” Y. Gurbuz, W. P. Kang, J. L. Davidson, D. L. Kinser, and D. V. Kerns, Sensors and Actuators B, 33, pp.100-104, July 1996.

“Analyzing the Mechanism of Hydrogen Adsorption Effects on Diamond based MIS Gas Sensors,” Y. Gurbuz, W. P. Kang, J. L. Davidson, D. V. Kerns, and B. Henderson, Proceedings of the Six International Meeting on Chemical Sensors, July 1996.

“A Novel Oxygen Gas Sensor Utilizing Thin Film Diamond Diode with Catalyzed Metal-Oxide Electrode,” Y. Gurbuz, W. P. Kang, J. L. Davidson, and D. V. Kerns, Proceedings of the Six International Meeting on Chemical Sensors, July 1996.

“Physical Characterization of Diamond Pyramidal Microtip Emitters,” W. P. Kang, J. L. Davidson, M. A. George, J. Wittig, I. Milosevljevic, Q. Li, J. F. Xu, and D. V. Kerns, Proceedings International Vacuum Microelectronics Conference, pp . 273-277, July 1996.

“Characterization of the Microstructure of Diamond Pyramidal Microtip Emitters,” W. P. Kang, J. L. Davidson, M. A. George, I. Milosevljevic, J. Wittig, and D. V. Kerns, Proceedings of the International Conference on the New Diamond Science and Technology, pp. 403-405, September 1996.

“Analyzing the Mechanism of Hydrogen Adsorption Effects on Diamond based MIS Hydrogen Sensors,” Y. Gurbuz, W. P. Kang, J. L. Davidson, and D. V. Kerns, Sensors and Actuators B, 35, pp.68-72, September 1996.

“A Novel Oxygen Gas Sensor Utilizing Thin Film Diamond Diode with Catalyzed Tin-Oxide Electrode,” Y. Gurbuz, W. P. Kang, J. L. Davidson, and D. V. Kerns, Sensors and Actuators B, 36, pp.303-307, October 1996.

“University Perspectives in Environmentally Conscious Manufacturing,” D. Hunkler, D. V. Kerns, et. al., International Journal of Environmentally Conscious Design & Manufacturing, 6(3), pp. 37-44, 1997.

“Characterization of the Microstructure of Diamond Pyramidal Microtip Emitters,” W. P. Kang, J. L. Davidson, M. A. George, I. Milosevljevic, J. Wittig, and D. V. Kerns, Diamond and Related Materials, 6, pp. 403-405, March 1997.

“Physical Characterization of Diamond Pyramidal Microtip Emitters,” W. P. Kang, J. L. Davidson, M. A. George, J. Wittig, I. Milosevljevic, Q. Li, J. F. Xu, and D. V. Kerns, Journal of Vacuum Science Technology B, 15(2), pp. 460-463, March/April 1997.

“High Sensitivity and Temperature Tolerant Microelectonic O2 Gas Sensor,” Y. Gurbuz, W. Kang, J. Davidson, D.

Kerns, and B. Henderson, Digest of Technical Papers – International Conference on Solid-State Sensors and Actuators, pp. 979- 982, June 1997.

“Gated Diamond Field Emitter Array with Ultra Low Operating Voltage and High Emission Current,” A. Wisitsora-at, W.P. Kang, J.L. Davidson, M. Howell, and D.V. Kerns, Conference Digest - Device Research Conference, pp. 150-151, June 1997.

“A Novel Wide Band-Gap Semiconductor Based Microelectronic Gas Sensor,” Y. Gurbuz, W. P. Kang, J. L. Davidson, D. V. Kerns, and B. Henderson, Conference Digest - Device Research Conference, pp. 44-45, June 1997.

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· “Micropattern Gated Diamond Field Emitter Arrays,” W. P. Kang, A. Wisitsora-at, J. L. Davidson, M. Howell, Q. Li, J. F. Xu, and D. V. Kerns, Technical Digest of International Vacuum Microelectronics Conference, pp. 567-571, August 1997.

· “The Effects of sp2 Content and Surface Treatment on the Field Emission of Micropatterned Pyramidal Diamond

Tips,” W. P. Kang, A. Wisitsora-at, J. L. Davidson, Q. Li, C. K. Kim, J. F. Xu, and D. V. Kerns, Technical Digest of International Vacuum Microelectronics Conference, pp. 273-277, August 1997.

“A Study of Diamond Field Emission Using Micro-patterned Monolithic Diamond Tips with Different sp2 Contents,” A. Wisitsora-at, W. P. Kang, J. L. Davidson, and D. V. Kerns, Applied Physics Letters, 71(23), pp. 3394-3396, December 1997.

“On the Fabrication and Behavior of Diamond Microelectromechanical Sensors (DMEMS),” J. L. Davidson, W. P. Kang, L. Davis, K. Holmes, M. Howell, D. V. Kerns, and B. Henderson, Diamond Materials V, Edited by J. L. Davidson, W.D Brown, A. Gicquel, B.V. Spitsyn, and J.C. Angus, The Electrochemical Society, Inc., Vol. 97-32, pp. 635-651, 1998.

“Enhancement of Field Emission Characteristics of Micropatterned Polycrystalline Diamond Tips,” A. Wisitsora-at, W. P. Kang, J. L. Davidson, Y. Gurbuz, and D. V. Kerns, Diamond Materials V, Edited by J. L. Davidson, W.D Brown, A. Gicquel, B.V. Spitsyn, and J.C. Angus, The Electrochemical Society, Inc., 97-32, pp. 547-555, 1998.

“The Effects of i-Diamond Thickness on Gas Sensing Performance of the Diamond Based MIS Gas Sensor,” Y. Gurbuz, W. P. Kang, J. L. Davidson, D. V. Kerns, and T. G. Henderson, Diamond Materials V, Edited by J. L. Davidson, W.D Brown, A. Gicquel, B.V. Spitsyn, and J.C. Angus, The Electrochemical Society, Inc., 97-32, pp. 652-657, 1998.

“Putting our Management of Technology Master‟ s Degree Program On-Line: the MOTOL Experience,” J. Crocetti, R.

Goodrich, J. Bers, J. Bourne, D. Kerns, and D. Quinn, International Association of Management of Technology 1998 Conference Proceedings, February 1998.

“Effect of sp2 Content and Tip Treatment on the Field Emission of Micropatterned Pyramidal Diamond Tips,” W. P. Kang, A. Wisitsora-at, J. L. Davidson, D. V. Kerns, Q. Li, J. F. Xu, and C. K. Kim, Journal of Vacuum Science Technology B, 16(2), pp.684-688, March/April 1998.

“Micropattern Gated Diamond Field Emitter Array,” W.P. Kang, A. Wisitsora-at, J.L. Davidson, M. Howell, D.V. Kerns, Q. Li, and J.F. Xu, Journal of Vacuum Science Technology B, 16(2), pp. 732-735, March/April 1998.

“A New Self-align Gated Diamond Field Emitter Array with Sub-V Turn-on Voltage and High Emission Current,” A. Wisitsora-at, W. P. Kang, J.L. Davidson, Q. Li, J. F. Xu, and D. V. Kerns, Device Research Conference Digest, pp. 120- 121, June 1998

“High Temperature Tolerant Diamond-Based Microelectronic Oxygen Gas Sensor,” Y. Gurbuz, W. P. Kang, J. L. Davidson, and D. V. Kerns, Sensor and Actuator B, 49(1-2), pp. 115-120, June 1998.

“Effects of Fast Neutrons on Electrical Parameters and Light Emission from N-Channel Silicon JFETs,” N. Akil, A. Hoffmann, J.-P. Charles, S. Kerns, and D. V. Kerns, Jr., Proceedings of the 2nd French-Italian Symposium on SiO2 and Advanced Dielectrics, p. 10, June 1998.

“A New High Temperature Solid-State Microelectronic Carbon Monoxide Gas Sensor,” Y. Gurbuz, W. P. Kang, J. L. Davidson, D. V. Kerns, and T. Henderson, IEEE 4th International High Temperature Electronics Conference Proceedings, pp. 230-233, June 1998.

“Diamond Field Emitter Array for High Temperature Microelectronics Applications,” W. P. Kang, A. Wisitsora-at, J. L. Davidson, and D. V. Kerns, IEEE 4th International High Temperature Electronics Conference Proceedings, pp. 161-164, June 1998.

“Diamond Microelectromechanical Sensors (DMEMS),” J. L. Davidson, W. P. Kang, L. Davis, K. Holmes, M. Howell, D. V. Kerns, and T. Henderson, IEEE 4th International High Temperature Electronics Conference Proceedings, pp. 274-279, June 1998.

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“Developing Engineering Leadership Through an Undergraduate Minor in Management of Technology,” D. Kerns, S. Kerns, and R. Nash, Proceedings of 1998 ASEE Annual Conference, June 1998.

“A New Self-aligned-gate-molding Technique for the Fabrication of Gated Diamond Emitter,” W. P. Kang, A. Wisitsora-at, J. L. Davidson, Q. Li, J. F. Xu, and D. V. Kerns, Vacuum Microelectronics Conference Proceedings, pp. 168- 169, July 1998.

“Electroluminescence under Avalanche in Silicon Junctions of Micro-Electronic Structure,” N Akil, A. Hoffmann, J.-P. Charles, S. Kerns, and D. V. Kerns, Jr., Proceedings of the 3rd International Conference on Electric Charge in Solid Insulators, p. 157, July 1998.

Efficient Electron Emitter Utilizing Boron-Doped High sp2 Diamond Tips,” A. Wisitsora-at, W. P. Kang, J. L. Davidson, Q. Li, J, F. Xu, and D. V. Kerns, International Vacuum Electron Sources Conference, pp. 73-74, July 1998.

“Temperature Insensitive Self-Align Gated Diamond Field Emitter,” W. P. Kang, A. Wisitsora-at, J. L. Davidson, and D. V. Kerns, International Vacuum Microelectronics Conference, pp. 215, July 1998.

“A New Diode-Based Carbon Monoxide Gas Sensor Utilizing SnOx/Diamond,” Kang, W. P., Gurbuz, Y., Davidson, J. L., Zhou, Q., Kerns, D. V., and Henderson, B., International Meeting on Chemical Sensors, pp. 172-174, July 1998.

“Photon Generation by Silicon Diodes in Avalanche Breakdown,” N. Akil, S. E. Kerns, D. V. Kerns, Jr., A. Hoffmann, and .J-P. Charles, Applied Physics Letters, 73 (7), pp. 871-872, August 1998.

“Ultra Low Voltage Boron-Doped Diamond Field Emitter Vacuum Diode,” W.P. Kang, A. Wisitsora-at, J.L. Davidson, and D.V. Kerns, IEEE Electron Device Letters, 19(10), pp. 379-381, October 1998.

“Threshold Voltage Stabilization in Radiation Environments,” D. V. Kerns, Jr., H. J. Barnaby, and S. E. Kerns, IEEE Transactions on Nuclear Science, 45(6), pp. 3175-3178, December 1998.

“Total-Dose Radiation-Hard Diamond-Based Hydrogen Sensor,” D. V. Kerns, W. P. Kang, J. L. Davidson, Q. Zhou, Y. Gurbuz, and S. E. Kerns, IEEE Transactions on Nuclear Science, 45(6), pp. 2799-2804, December 1998.

“High Temperature Tolerant Diamond Diode for Carbon Monoxide Gas Detection,” Y. Gurbuz, W. P. Kang, J. L. Davidson, and D. V. Kerns, Journal of Applied Physics, 84(12), pp. 6935-6936, December 1998.

“A PECVD Diamond Device for Chemical Gas Sensing Applications,” Y. Gurbuz, W. P. Kang, J. L. Davidson, and D. V. Kerns, Diamond and Related Materials, 7(11-12), pp. 1723-1726, December 1998.

“Electrical and Optical Analysis of Low Fluence Fast Neutron Damage to JFETs,” S. Forster, A. Hoffmann, J.-P. Charles, S. E. Kerns, and D. V. Kerns Jr., IEEE Proceedings of 5th European Conference on Radiation and Its Effects on Components and Systems on Reliability of Electron Devices, pp. 508-511, 1999.

“Subvolt Turn-on Voltage Self-Align Gate Diamond Emitter Fabricated by Self-Align-Gate-Sharpened Molding Technique,” W. P. Kang, A. Wisitsora-at, J. L. Davidson, Q. Li, J. F. Xu, and D. V. Kerns, Journal of Vacuum Science and Technology B, 17(2), pp. 740-743, March/April 1999.

“The Effects of Structural Properties on Gas Sensing Performance of the MIS Hydrogen Gas Sensor,” Y. Gurbuz, W. P. Kang, J. L. Davidson, and D. V. Kerns, Journal of Electrochemical Society,146(1), pp. 387-391, January 1999.

“Efficient Electron Emitter Utilizing Boron-doped Diamond Tips with sp2 Content,” A. Wisitsora-at, W. P. Kang, J. L. Davidson, Q. Li, J. F. Xu, and D.V. Kerns, Applied Surface Sciences, 146, pp. 280-286, May 1999.

“A Multi-Mechanism Model for Photon Generation by Silicon Junctions in Avalanche Breakdown,” N. Akil, S. E.

Kerns, D. V. Kerns, Jr., A. Hoffmann, and J.-P. Charles, IEEE Transactions on Electron Devices, pp. 1022-1028, May 1999.

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“Current Conduction Mechanism and Gas Adsorption Effects on Device Parameters of the Pt/SnOx Diamond Gas Sensor,” Y. Gurbuz, W. P. Kang, J. L. Davidson, and D. V. Kerns, IEEE Transactions on Electron Devices, 46(5), pp. 914- 920, May 1999.

“On the aging of avalanche light emission from silicon junctions,” M. de la Bardonnie, D. Jiang, S. E. Kerns, D. V. Kerns, Jr., P. Mialhe, J.-P. Charles, and A. Hoffman, IEEE Transactions on Electron Devices, 46(6), pp. 1234-1239, June 1999.

“A New Diode-Based Carbon Monoxide Gas Sensor Utilizing SnOx/Diamond,” Y. Gurbuz, W. P. Kang, J. L. Davidson, and D. V. Kerns, Sensors and Actuators B-Chemical, 56(1-2), pp.151-154, June 1999.

“Field Emission Enhancement of Diamond Tips Utilizing Boron Doping and Surface Treatment,” A. Wisitsora-at, W. P. Kang, J. L. Davidson, Y. Gurbuz, and D. V. Kerns, Diamond and Related Materials, 8(7), pp. 1220-1224, July 1999.

“Diamond as an Active Sensor Material,” J. L. Davidson, W. P. Kang, Y. Gurbuz, K. C. Holmes, L. G. Davis, A. Wisitsora-at, D.V. Kerns, R.L. Eidson, and T. Henderson, (Invited) Diamond and Related Materials, 8(8-9), pp. 1741- 1747, August 1999.

“Light Emission of Total Dose and Hot Carrier Effects on Silicon Junctions,” S. Kerns, D. Jiang, M. de la Bardonnie, F.

Pelanchon, H. Barnaby, D. V. Kerns, R. D. Schrimpf, B. L. Bhuva, P. Mialhe, A. Hoffmann, and J.-P. Charles, IEEE Transactions on Nuclear Science, 46(3), Part 1, pp. 1804-1808, December 1999.

“Development of Diamond Microtip Field Emitter Devices,” W. P. Kang, J. L. Davidson, A. Wisitsora-at, and D. V. Kerns, (Invited) Diamond Materials VI, Electrochemical Society Proceedings, 99-32, pp. 311-321, 2000.

“Size Effect on SEB Cross-Section of VDMOSFETs,” C. Salame, A. Hoffmann, P. Mialhe, J.-P. Charles, D. V. Kerns, Jr., and S. E. Kerns, Radiation Effects and Defects in Solids, 152(3), pp. 191-200, 2000.

“Comparative Analysis of Metal and Optical Interconnect Technology,” D. Jiang, B. L. Bhuva, D. V. Kerns, Jr., and S. E. Kerns, Proceedings of the IEEE International Interconnect Technology Conference, pp. 25-27, May 2000.

“Diamond Emitter Arrays with Uniform Self-Aligned Gate Built from Silicon-on-Insulator Wafer,” A. Wisitsora-at, W. P. Kang, J. L. Davidson, D. V. Kerns, and S. E. Kerns, 13th International Vacuum Microelectronics Conference, pp.136-137, August 2000.

“Recent Development of Diamond Microtip Field Emitter Cathodes and Devices,” W. P. Kang, J. L. Davidson, A. Wisitsora-at, D.V. Kerns, and S. Kerns, (Invited) 13th International Vacuum Microelectronics Conference, pp.92-95, August 2000.

“Design and Process Issues Affecting Performance of Optical Interconnects on ICs,” B. Bhuva, D. Jiang, D. Kerns, Jr. and S. Kerns, Proceedings of Conference on Process Integration and Device Technology, September 2000.

“Feasibility Study for Si-based Optical VLSI Interconnects,” A. Chatterjee, B. Bhuva, D. Jiang, J. Stankus, D. Kerns, Jr., and S. Kerns, Proceedings of SRC TechCon, September 2000.

“Analyses o f Electroluminescence spectra of silicon junctions in avalanche breakdown using an indirect interband

recombination model,” M. Lahbabi, A. Ahaitouf, M. Fliyou, E. Abarkan, A. Hoffmann, J.-P. Charles, S. E. Kerns, and D. V. Kerns, Jr., Applied Physics Letters, 70(20), pp. 3182-3184, November 13, 2000.

“Circuit Technique for Threshold Voltage Stabilization Using Substrate Bias in Total Dose Environments,” J. K. Shreedhara, H. J. Barnaby, B. L. Bhuva, D. V. Kerns, Jr., and S. E. Kerns, IEEE Transactions on Nuclear Science, 47(6), Part 3, pp. 2557-2560, December 2000.

“Diamond Emitter Arrays with Uniform Self-Aligned Gate Built from Silicon-on-Insulator Wafer,” A. Wisitsora-at, W. P. Kang, J. L. Davidson, D. V. Kerns, and S. E. Kerns, Journal of Vacuum Science and Technology B, 19(3), pp.971-974, May/June 2001.

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“Recent Development of Diamond Microtip Field Emitter Cathodes and Devices,” W. P. Kang, J. L. Davidson, A. Wisitsora-at, D .V. Kerns, and S. Kerns, invited, Journal of Vacuum Science and Technology B, 19(3), pp. 936-941, May/June 2001.

“Fabrication and Field Emission Characteristics of Lateral Diamond Field Emitter,” W. P. Kang, J. L. Davidson, A. Wisitsora-at, M. Howell, A. Jamuhadin, Y. M. Wong, K.L. Soh, and D. V. Kerns, Proceedings of the 14th International Vacuum Microelectronics Conference, pp. 275-276, August 2001.

“Diamond Field Emission Triode with Low Gate Turn-on Voltage and High Gain,” A. Wisitsora-at , W. P. Kang, J. L. Davidson, D. V. Kerns, and T. Fisher, Proceedings of the 14th International Vacuum Microelectronics Conference, pp. 285-286, August 2001.

“Fabrication and Behavior of Diamond Field Emitter triode Utilizing Silicon-On-Insulator Technology and CVD Diamond,” Proceedings of the 6th Applied Diamond Conference/Second Frontier Carbon Technology Joint Conference, pp.104-108, August 2001.

“The Search for Design in Electrical Engineering Education,” D. V. Kerns, S. E. Kerns, G. A. Pratt, M. H. Somerville, and J. D. Crisman, Proceedings of the First IEEE International Workshop on Electronic Design, Test and Applications, DELTA, pp.

192-196, 2002.

“Novel X-ray Sources and Systems Using Gated Electron Emitters,” R. R. Whitlock, D. S. Y. Hsu, J. L. Shaw, S. E. Kerns, D. V. Kerns, Jr., W. P. Kang, and J. L. Davidson, Proceedings of the SPIE – The International Society for Optical Engineering, pp. 131-135, 2002.

“Simulation of Gallium Arsenide Electroluminescence Spectra in Avalanche Breakdown Using Self-Absorption and Recombination Models,” M. Lahbabi, A. Ahaitouf, E. Abarkan, M. Fliyou, A. Hoffmann, J.-P. Charles, B. L. Bhuva, S. E. Kerns, and D. V. Kerns, Jr., Applied Physics Letters, 80(6), pp. 1004-1006, February 11, 2002.

“All-Silicon Optical Contactless Testing of Integrated Circuits,” S. Sayil, D. Kerns, and S. Kerns, International Journal of Electronics, 8(7), pp. 537-547, July 2002.

“Diamond Field-emission Triode with Low Gate Turn-on Voltage and High Gain,” A. Wisitsora-at, W. P. Kang, J. L. Davidson, D. V. Kerns, and T. Fisher, Journal of Vacuum Science and Technology B, 21(1), pp. 614-617, January/February 2003.

“Fabrication and Field Emission Characteristics of Lateral Diamond Field Emitter,” W. P. Kang, J. L. Davidson, A. Wisitsora-at, M. Howell, A. Jamuhadin, Y. M. Wong, K. L. Soh, and D. V. Kerns, Journal of Vacuum Science and Technology B, 21(1), pp. 593-596, January/February 2003.

“Modeling of the Transistor Characteristics of a Monolithic Diamond Vacuum Triode,” A. Wisitsora-at, W. P. Kang, J. L. Davidson, C. Li, D. V. Kerns, and M. Howell, Journal of Vacuum Science and Technology B, 21(4),pp. 1665-1670, July/August 2003.

“High Current Diamond Field Emission Diode,” A. Wisitsora-at, W.P. Kang , J.L. Davidson, M. Howell, W. Hofmeister, and D.V. Kerns, Journal of Vacuum Science and Technology B, 21(4), pp.1671-1674, July/August 2003.

“Micropatterned Diamond/Carbon Field Emission Diode and Triode,” J. L. Davidson, W. P. Kong, Y. M. Wang, R. Takalkar, W. Hofmeister, D. V. Kerns, Meeting Abstracts, 2004 Joint International Meeting - 206th Meeting of the Electrochemical Society/2004 Fall Meeting of the Electrochemical Society of Japan, MA 2004-02, 2004, p 1828.

“Analysis of Electroluminescence Spectra of Silicon and Gallium Arsenide p-n Junctions in Avalanche Breakdown,” M.

Lahbabi, A. Ahaitouf, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, S. E. Kerns, and D. V. Kerns, Jr., Journal of Applied Physics, 95(4), pp. 1822-1828, February 15, 2004.

“Diamond Microelectronic Gas Sensor for Detection of Benzene and Toluene, ” Y. Gurbuz, W. P. Kang, J. L. Davidson, and D. V. Kerns, Sensor and Actuators B-Chemical, 99(2-3), pp. 207-215 May 2004.

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“Edge-Shaped Diamond Field Emission Arrays,” R. S. Takalka, J. L. Davidson, W. P. Kang, A. Wisitsora-at, and D. V. Kerns, Technical Digest of the 17th International Vacuum Nanoelectronics Conference, pp. 156-157, July 2004.

“Diamond and Carbon Derived Field Emission Vacuum Microelectronics,” W. P. Kang, J. L. Davidson, A. Wisitsora-at, Y. M. Wong, R. Takalkar, and D. V. Kerns, Diamond 2004 - 15th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide, paper 10.5, September 2004.

“Olin College – Developing New Engineering Curricula from Basic Principles,” D. V. Kerns and S. E. Kerns, 33. International Symposium IGIP/IEEE/ASEE Proceedings, Fribourg, Switzerland, September 2004

“Diamond Vacuum Field Emission Devices,” W. P. Kang, J. L. Davidson, A. Wisitsora-At, Y. M. Wong, R. Takalkar, K. Holmes, D. V. Kerns, Diamond and Related Materials, 13(11-12), pp. 1944-1948, November/December 2004.

“The Olin Curriculum: Thinking Toward the Future,” M. Somerville et al, IEEE Transactions on Education, 48(1), pp. 198-205, February 2005.

“A Survey of Contactless Measurement and Testing Techniques,” A. Sayil, D. V. Kerns, and S. E. Kerns, IEEE Potentials, 24(1), pp. 25-28, February/March 2005.

“Diamond and Carbon-Derived Vacuum Micro- and Nano-Electronic Devices,” W. P. Kang, J. L. Davidson, A. Wisitsora-at, Y. M. Wong, R. Takalkar, K. Subramania, D. V. Kerns, W. H. Hofmeister, Diamond and Related Materials, v 14, n 3-7, March/July, 2005, Proceedings of Diamond 2004, the 15th European Conference on Diamond, Diamond- Like Materials, Nitrides and Silicon, p 685-691.

“Edge-Shaped Diamond Field Emission Arrays,” R. S. Takalkar, J. L. Davidson, W. P. Kang, A. Wisitsora-at, and D. V. Kerns, Journal of Vacuum Science and Technology B, Journal of Vacuum Science and Technology B, 23(2), pp.800-804, 2005.

“PECVD Diamond-Based High Performance Power Diodes”, Y. Gurbuz, W. P. Kang, J. L. Davidson, D. V. Kerns, and

Q. Zhou, IEEE Transactions on Power Electronics, Vol. 20, No. 1, pp. 1-10, 2005.

“Comparison of Contactless Measurement and Testing Techniques to a New All-silicon Optical Test and Characterization Method,” S. Sayil, D. Kerns and S. Kerns, IEEE Transactions On Instrumentation and Measurement, No. 5, October 2005.

“Enhanced Electron Field Emission from Micropatterned Pyramidal Diamond Tips Incorporating CH4/H2/N2

Plasma- Deposited Nanodiamond”, K. Subramanian, W.P. Kang, J.L. Davidson, R.S. Takalkar, B.K. Choi, M. Howell, and D.V. Kerns, Proceedings of Diamond 2005 - 16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides, paper 16.2, Toulouse, France, Sept. 11-16, 2005.

“Design and Fabrication of Single-Chip Carbon Nanotubes Vacuum Field Emission Differential Amplifier”, Y. M.

Wong, W. P. Kang, J. L. Davidson, B. K. Choi, D. V. Kerns, and J. H. Huang, Technical Digest of the 18th International Vacuum Nanoelectronics Conference, pp. 35-36, Oxford, UK, July 10-14, 2005.

"Carbon Nanotubes Vacuum Field Emission Differential Amplifier Integrated Circuits", W. P. Kang, Y. M. Wong, J.

L. Davidson, D. V. Kerns, B. K. Choi, J. H. Huang and K. F. Galloway, IEE Electronics Letters, Vol. 42, No. 4, pp. 210- 211, 2006.

"Enhanced Electron Field Emission from Micropatterned Pyramidal Diamond Tips Incorporating CH4/H2/N2 Plasma-

Deposited Nanodiamond", K. Subramanian, W.P. Kang, J.L. Davidson, R.S. Takalkar, B.K. Choi, M. Howell, and D.V. Kerns, Diamond and Related Materials, 15, pp. 1126-1133, 2006.

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"Development of Carbon Nanotubes Vacuum Field Emission Differential Amplifier ICs" (Best Poster Award), Y. M. Wong, W. P. Kang, J. L. Davidson, B. K. Choi, D. V. Kerns, and J. H. Huang, Technical Digest of IVNC 2006, pp.425, Guilin, China, July 17-20, 2006,.

“Development of Carbon Nanotubes Vacuum Field Emission Differential Amplifier Integrated Circuit”, Y. M.

Wong, W. P. Kang, J. L. Davidson, D. V. Kerns and J. H. Huang, J. Vac. Sci. Technol. B, 25 (2), pp. 627-630, 2007.

“Integrated Carbon Nanotube Field Emission Differential Amplifier: Modeling and Measurement of the Common

Mode Rejection Ratio”, Y. M. Wong, W. P. Kang, J. L. Davidson, J. H. Huang, and D. V. Kerns, , Diamond and Related Materials, available online 12/15/2007.

“Development of Carbon Nanotubes Vacuum Field Emsiion Devices”, W. P. Kang, Y. M. Wong, J. L. Davidson, D. V.

Kerns, J. H. Huang, and K. F. Galloway, , Technical Proceedings of the 2007 NSTI Nanotechnology Conference, Vol. 1, pp.1- 4, Santa Clara, CA, USA, May 20-24, 2007.

“AC Performance of a Novel Carbon Nanotube Vacuum Field Emission Differential Amplifier IC”, Y. M. Wong, W. P.

Kang, J. L. Davidson, D. V. Kerns, and J. H. Huang, Technical Digest of 20th. International Vacuum Nanoelectronics Conference, pp. 8-9, Chicago, IL., USA, July 8-12, 2007.

“Carbon Nanotubes Vacuum Field Emission Differential Amplifier with High Performance Characteristics”, Y. M.

Wong, W. P. Kang, J. L. Davidson, D. V. Kerns and J. H. Huang, Abstracts of Diamond 2007, O9.3, September 9-14, Berlin, Germany, 2007.

“Characterization and CMRR Modeling of a Carbon-Nanotube Field-Emission Differential Amplifier”, Y. M. Wong,

W. P. Kang, J. L. Davidson, D. V. Kerns, J. H. Huang and K.W. Galloway, IEEE Transactions on Electron Devices, Vol. 56., No. 5, May 2009.

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