diodo damper
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VISHAY BY228/13 / BY228/15
Document Number 86004
Rev. 1.6, 11-Aug-04
Vishay Semiconductors
www.vishay.com
1
949588
Standard Avalanche Sinterglass Diode
Features Glass passivated junction
• Hermetically sealed package
Applications
High voltage rectification
Efficiency diode in horizontal deflection circuits
Mechanical Data
Case: SOD-64 Sintered glass case
Terminals: Plated axial leads, solderable perMIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 858 mg
Parts Table
Absolute Maximum RatingsTamb = 25 °C, unless otherwise specified
Maximum Thermal ResistanceTamb = 25 °C, unless otherwise specified
Part Type differentiation Package
BY228-13 VR = 1000 V; IFAV = 3 A SOD-64
BY228-15 VR = 1200 V; IFAV = 3 A SOD-64
Parameter Test condition Part Symbol Value Unit
Peak reverse voltage, non
repetitive
IR = 100 µA BY228/13 VRSM 1300 V
BY228/15 VRSM 1500 V
Reverse voltage see electrical characteristics BY228/13 VR 1000 V
BY228/15 VR 1200 V
Peak forward surge current tp = 10 ms, half sinewave IFSM 50 A
Average forward current IFAV 3 A
Junction temperature T j 140 °C
Storage temperature range Tstg - 55 to + 175 °C
Non repetitive reverse
avalanche energy
I(BR)R = 0.4 A ER 10 mJ
Parameter Test condition Symbol Value Unit
Junction ambient on PC board with spacing
25 mm
RthJA 70 K/W
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Document Number 86004
Rev. 1.6, 11-Aug-04
VISHAY BY228/13 / BY228/15Vishay Semiconductors
Electrical CharacteristicsTamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Part Symbol Min Typ. Max Unit
Forward voltage IF = 5 A VF 1.5 V
Reverse current VR = 1000 V BY228-13 IR 2 5 µAVR = 1200 V BY228-15 IR 2 5 µA
VR = 1000 V, T j = 140 °C BY228-13 IR 140 µA
VR = 1200 V, T j = 140 °C BY228/15 IR 140 µA
Total reverse recovery time IF = 1 A, - diF /dt = 0.05 A/ µs trr 20 µs
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0,25 A trr 2 µs
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 2. Forward Current vs. Forward Voltage
94 9081
l l
TL0
10
20
30
40
R
- T h e r m .
R e s i s t . J u n c t i o n / A m
b i e n t ( K / W )
0 5
l - Lead Length ( mm )
15 3020 t h J A
10 25
I
- F o r w a r d C u r r e n t ( A )
0.001
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF - Forward Voltage ( V )16402
F
T j = 25°C
T j =150 °C
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 4. Reverse Current vs. Junction Temperature
16403
RthJA = 25 K/Wl = 10 mm
RthJA = 70 K/W
PCB: d = 25 mm
VR = VRRMhalf sinewave
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 755025 125100 150
Tamb- Ambient Temperature ( °C )
I
- A v e r a g e F o r w a r d C u r r e n t
( A
)
F A
1
10
100
1000
25 50 75 100 125 150
T j - Junction T emperature (°C )16404
VR = VRRM
I
- R e v e r s e C u r r e n t ( µ A
)
R
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VISHAY BY228/13 / BY228/15
Document Number 86004
Rev. 1.6, 11-Aug-04
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
16405
0
50
100
150
200
250
300
350
25 50 75 100 125 150
T j - Junction Temperature ( °C )
VR RM= V
P
- R e v e r s e P o w e r D i s s i p a t
i o n ( m W
)
R
PR-Limit@100 % V
PR -Limit@80 % V
R
R
Figure 6. Diode Capacitance vs. Reverse Voltage
0
10
20
30
40
50
60
70
0.1 1 10 100
VR – Reverse Voltage ( V )16406
C
– D i o d e C a p a c i t a n
c e ( p F
)
D
f =1 MHz
Cathode Identification 4.3 (0.168) max.
1.35 (0.053) max.
4.0 (0.156) max.
Sintered Glass CaseSOD-64
94 958726(1.014) min. 26 (1.014) min.
ISO Method E
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Document Number 86004
Rev. 1.6, 11-Aug-04
VISHAY BY228/13 / BY228/15Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution andoperatingsystems with respect to their impact on the health and safety of our employees and the public, aswell as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which areknown as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSsand forbid their use within the next ten years. Various national and international initiatives are pressing for anearlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate theuse of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depletingsubstances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for eachcustomer application by the customer. Should the buyer use Vishay Semiconductors products for anyunintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personaldamage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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