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AM4835EPAnalog Power
September, 2005 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM4835E_B
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, makingthis device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
S
S
S
G
1
2
3
4
SOIC-8
Top View
D
D
D
D
8
7
6
5
S
D
G
P-Channel MOSFET
P-Channel 30-V (D-S) MOSFET
Low r DS(on) Provides Higher Efficiency and
Extends Battery Life
Miniature SO-8 Surface Mount Package
Saves Board Space
High power and current handling capability
Extended VGS range (25) for battery pack
applications
Notes
a. Surface Mounted on 1 x 1 FR4 Board.
b. Pulse width limited by maximum junction temperature
VDS(V) rDS(on)m() ID(A)19 @ VGS= -10V -9.5
30 @ VGS= -4.5V -7.5
PRODUCT SUMMARY
-30
Symbol Maximum Units
VDS -30
VGS 25
TA=25oC -9.5
TA=70oC -8.3
IDM 50
IS -2.1 A
TA=25oC 3.1
TA=70oC 2.6
TJ, Tstg -55 to 150oC
Continuous Source Current (Diode Conduction)a
ABSOLUTE MAXIMUM RATINGS (TA= 25oC UNLESS OTHERWISE NOTED)
Parameter
Pulsed Drain Currentb
VGate-Source Voltage
Drain-Source Voltage
Continuous Drain Currenta ID
A
Power Dissipationa PD
Operating Junction and Storage Temperature Range
W
Symbol Maximum Units
Maximum Junction-to-Casea t
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AM4835EPAnalog Power
September, 2005 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM4835E_B
Notes
a. Pulse test: PW
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AM4835EPAnalog Power
September, 2005 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM4835E_B
Typical Electrical Characteristics (P-Channel)
Figure 11. Transient Thermal Response Curve
0
500
1000
1500
2000
0 5 10 15 20
VDS (V)
Capacitance(pF)
Ciss
Coss
Crss
Figure 8. Capacitance Characteristics
0
5
10
15
20
25
30
35
40
45
50
0.001 0.1 10 1000
TIME(S)
POWER(W)
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Single Pulse
.02
.05
.1
.2
.5
P DM
t1
t 2
1. Duty Cycal D = t1/t2
2. Per Unit Bas e RJA
=70C/W
3. TJM- TA= P DMZjc
4. Sureface Mounted
Square Wave Pulse Duration (S)
0.01
0.1
1
10
10 0
0 .1 1 10 100
VDSDrain to Source Voltage (V)
IDCurrent(A)
10 uS
100 uS
1mS
10mS
100mS
10S
100S
DC
IDlimited
RDS(ON)
Figure 9. Maximum Safe Operating Area
0
2
4
6
8
10
0 5 10 15 20 25 30
Qg, Total Gate Charge (nC)
VgsGatetoSource(V
VD= 10V
ID= -9.5A
Figure 7. Gate Charge Characteristics
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AM4835EPAnalog Power
September, 2005 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM4835E_B
Package Information
SO-8: 8LEAD
H x 45
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