8/11/2019 Ds Am4835ep b

1/6

1

AM4835EPAnalog Power

September, 2005 - Rev. A

PRELIMINARY

Publication Order Number:

DS-AM4835E_B

These miniature surface mount MOSFETs utilize

High Cell Density process. Low rDS(on) assures

minimal power loss and conserves energy, makingthis device ideal for use in power management

circuitry. Typical applications are PWMDC-DC

converters, power management in portable and

battery-powered products such as computers,

printers, battery charger, telecommunication power

system, and telephones power system.

S

S

S

G

1

2

3

4

SOIC-8

Top View

D

D

D

D

8

7

6

5

S

D

G

P-Channel MOSFET

P-Channel 30-V (D-S) MOSFET

Low r DS(on) Provides Higher Efficiency and

Extends Battery Life

Miniature SO-8 Surface Mount Package

Saves Board Space

High power and current handling capability

Extended VGS range (25) for battery pack

applications

Notes

a. Surface Mounted on 1 x 1 FR4 Board.

b. Pulse width limited by maximum junction temperature

VDS(V) rDS(on)m() ID(A)19 @ VGS= -10V -9.5

30 @ VGS= -4.5V -7.5

PRODUCT SUMMARY

-30

Symbol Maximum Units

VDS -30

VGS 25

TA=25oC -9.5

TA=70oC -8.3

IDM 50

IS -2.1 A

TA=25oC 3.1

TA=70oC 2.6

TJ, Tstg -55 to 150oC

Continuous Source Current (Diode Conduction)a

ABSOLUTE MAXIMUM RATINGS (TA= 25oC UNLESS OTHERWISE NOTED)

Parameter

Pulsed Drain Currentb

VGate-Source Voltage

Drain-Source Voltage

Continuous Drain Currenta ID

A

Power Dissipationa PD

Operating Junction and Storage Temperature Range

W

Symbol Maximum Units

Maximum Junction-to-Casea t

8/11/2019 Ds Am4835ep b

2/6

2

AM4835EPAnalog Power

September, 2005 - Rev. A

PRELIMINARY

Publication Order Number:

DS-AM4835E_B

Notes

a. Pulse test: PW

8/11/2019 Ds Am4835ep b

3/6

8/11/2019 Ds Am4835ep b

4/6

4

AM4835EPAnalog Power

September, 2005 - Rev. A

PRELIMINARY

Publication Order Number:

DS-AM4835E_B

Typical Electrical Characteristics (P-Channel)

Figure 11. Transient Thermal Response Curve

0

500

1000

1500

2000

0 5 10 15 20

VDS (V)

Capacitance(pF)

Ciss

Coss

Crss

Figure 8. Capacitance Characteristics

0

5

10

15

20

25

30

35

40

45

50

0.001 0.1 10 1000

TIME(S)

POWER(W)

Figure 10. Single Pulse Maximum Power Dissipation

Normalized Thermal Transient Junction to Ambient

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

Single Pulse

.02

.05

.1

.2

.5

P DM

t1

t 2

1. Duty Cycal D = t1/t2

2. Per Unit Bas e RJA

=70C/W

3. TJM- TA= P DMZjc

4. Sureface Mounted

Square Wave Pulse Duration (S)

0.01

0.1

1

10

10 0

0 .1 1 10 100

VDSDrain to Source Voltage (V)

IDCurrent(A)

10 uS

100 uS

1mS

10mS

100mS

10S

100S

DC

IDlimited

RDS(ON)

Figure 9. Maximum Safe Operating Area

0

2

4

6

8

10

0 5 10 15 20 25 30

Qg, Total Gate Charge (nC)

VgsGatetoSource(V

VD= 10V

ID= -9.5A

Figure 7. Gate Charge Characteristics

8/11/2019 Ds Am4835ep b

5/6

5

AM4835EPAnalog Power

September, 2005 - Rev. A

PRELIMINARY

Publication Order Number:

DS-AM4835E_B

Package Information

SO-8: 8LEAD

H x 45

8/11/2019 Ds Am4835ep b

6/6