Download - irf5305
-
8/12/2019 irf5305
1/9
IRF5305HEXFETPower MOSFET
PD - 91385B
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET Power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistanceand low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Parameter Max. Units
ID@ TC= 25C Continuous Drain Current, VGS@ -10V -31
ID@ TC= 100C Continuous Drain Current, VGS@ -10V -22 A
IDM Pulsed Drain Current -110
PD @TC= 25C Power Dissipation 110 W
Linear Derating Factor 0.71 W/C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy 280 mJ
IAR Avalanche Current -16 A
EAR Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
C
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)
Absolute Maximum Ratings
Parameter Typ. Max. Units
RJC Junction-to-Case 1.4
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62
Thermal Resistance
VDSS= -55V
RDS(on)= 0.06
ID= -31A
TO-220AB
Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
Description
3/3/00
S
D
G
-
8/12/2019 irf5305
2/9
IRF5305
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol
(Body Diode)
showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
p-n junction diode.
VSD Diode Forward Voltage -1.3 V TJ= 25C, IS= -16A, VGS= 0V
trr Reverse Recovery Time 71 110 ns TJ= 25C, IF= -16A
Qrr Reverse RecoveryCharge 170 250 nC di/dt = -100A/s
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 V VGS= 0V, ID= -250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient -0.034 V/C Reference to 25C, ID= -1mA
RDS(on) Static Drain-to-Source On-Resistance 0.06 VGS= -10V, ID= -16A
VGS(th) Gate Threshold Voltage -2.0 -4.0 V VDS= VGS, ID= -250A
gfs Forward Transconductance 8.0 S VDS= -25V, ID= -16A
-25A
VDS= -55V, VGS= 0V
-250 VDS= -44V, VGS= 0V, TJ= 150C
Gate-to-Source Forward Leakage 100 VGS= 20V
Gate-to-Source Reverse Leakage -100nA
VGS= -20V
Qg Total Gate Charge 63 ID= -16A
Qgs Gate-to-Source Charge 13 nC VDS= -44V
Qgd Gate-to-Drain ("Miller") Charge 29 VGS= -10V, See Fig. 6 and 13 td(on) Turn-On Delay Time 14 VDD= -28V
tr Rise Time 66 ID= -16A
td(off) Turn-Off Delay Time 39 RG= 6.8
tf Fall Time 63 RD= 1.6, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance 1200 VGS= 0V
Coss Output Capacitance 520 pF VDS= -25V
Crss Reverse Transfer Capacitance 250 = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ= 25C (unless otherwise specified)
LD Internal Drain Inductance
LS Internal Source Inductance
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) ISD -16A, di/dt -280A/s, VDD V(BR)DSS,
TJ 175C
Notes:
VDD = -25V, starting TJ = 25C, L = 2.1mH
RG = 25, IAS = -16A. (See Figure 12)
Pulse width 300s; duty cycle2%.
-31
-110
A
S
D
G
S
D
G
-
8/12/2019 irf5305
3/9
IRF5305
www.irf.com 3
Fig 4.Normalized On-ResistanceVs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
10 0
1 0 0 0
0.1 1 10 10 0
D
DS
2 0 s P U L S E W I D THT = 25Cc A
-I
,D
rain-to-Source
C
urrent(A)
-V , Drain-to-Source Vol tage (V)
VGS
TOP - 15V
- 10V - 8.0V
- 7.0V - 6.0V
- 5.5V - 5.0V
BOTTOM - 4.5V
-4.5V
1
10
10 0
1000
0.1 1 10 100
D
D S
A
-I
,Drain-to-Source
Current(A)
-V , Drain-to-Source Vol tage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4 .5V
2 0 s P U L S E W I D T HT = 175CC
1
10
10 0
4 5 6 7 8 9 1 0
T = 25CJ
T = 175CJ
A
V = -25V2 0 s P U L S E W ID TH
DS
G S-V , Gate- to-Source Vol tage (V)
D
-I
,Drain-to-Source
Current
(A)
0. 0
0. 5
1. 0
1. 5
2. 0
-60 -40 -20 0 2 0 4 0 6 0 8 0 1 0 0 12 0 1 4 0 1 6 0 1 80
JT , Junct ion Tem perature (C)
R
,
Drain-to-Source
On
Resistance
DS(on)
(Norm
alized)
A
I = -27A
V = -10V
D
G S
J J
-
8/12/2019 irf5305
4/9
IRF5305
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 7. Typical Source-Drain DiodeForward Voltage
0
50 0
1000
1500
2000
2500
1 10 100
C,
Capacitance
(pF)
A
V = 0 V , f = 1 M H zC = C + C , C S H O R T E DC = CC = C + C
G S
iss gs gd ds
r ss gd
oss ds gdC is s
C os s
C rs s
D S-V , Drain-to-Sourc e Voltage (V)
0
4
8
12
16
20
0 10 20 30 40 50 60
Q , Tota l Gate Charge (nC)G
A
FO R TEST C IRCUITS E E F I G U R E 1 3
V = -44V
V = -28V
I = -16A
GS
-V
,G
ate-to-Source
Voltage
(V)
D
D S
D S
10
10 0
1 0 0 0
0.4 0.8 1.2 1.6 2.0
T = 25CJ
V = 0 VG S
SD
SD
A
-I
,Reverse
Drain
Current(
A)
-V , Source- to -Dra in Vo l tage (V)
T = 175CJ
1
10
10 0
1000
1 10 100
O PERA TIO N IN THIS AREA L IMITED B Y R DS(on)
100s
1m s
10m s
A
T = 25 CT = 175CSingle Pulse
C
J
DS-V , Drain-to-Source Vol tage (V)
D-I
,Drain
Current(A)
-
8/12/2019 irf5305
5/9
IRF5305
www.irf.com 5
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.Case Temperature
VDS
-10V
Pulse Width 1 sDuty Factor 0.1 %
RD
VGS
VDD
RG
D.U.T.
VDS
90%
10%
VGS
td(on) tr td(off) tf
+
-
25 50 75 100 125 150 1750
5
10
15
20
25
30
35
T , Case Temperature ( C)
-I
,DrainCurrent(A)
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
ThermalResponse
(Z
)
1
thJC
0.010.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE(THERMAL RESPONSE)
-
8/12/2019 irf5305
6/9
IRF5305
6 www.irf.com
Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche EnergyVs. Drain Current
QG
QGS QGD
VG
Charge
-10V
D.U.T. VDS
IDIG
-3mA
VGS
.3F
50K
.2F12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
0
10 0
20 0
30 0
40 0
50 0
60 0
70 0
25 50 75 100 125 150 175
J
E
,
Single
Pulse
Avalanche
Energy(m
J)
AS
A
Start ing T , Junc tion Tem perature (C)
V = -25V
ITOP -6 .6A -11AB O T T O M - 1 6 A
D D
D
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V (BR)DSS
IA S
R G
IA S
0 . 01tp
D.U.T
LV D S
+
-
VDD
D R I V E RA
- 2 0 V
15 V
-
8/12/2019 irf5305
7/9
IRF5305
www.irf.com 7
Peak Diode Recovery dv/dt Test Circuit
P.W.Period
di/dt
Diode Recoverydv/dt
Ripple 5%
Body Diode Forward Drop
Re-AppliedVoltage
ReverseRecoveryCurrent
Body Diode ForwardCurrent
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =P.W.
Period
+
-
+
+
+-
-
-
RGVDD
dv/dt controlled by RG ISDcontrolled by Duty Factor "D" D.U.T. - Device Under Test
D.U.TCircuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer
* Reverse Polarity for P-Channel** Use P-Channel Driver for P-Channel Measurements
*
VGS*
**
[ ]
[ ]
***VGS= 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For P-Channel HEXFETS
-
8/12/2019 irf5305
8/9
IRF5305
8 www.irf.com
L EAD ASSIGN MEN TS
1 - GATE
2 - D R AIN
3 - SOU R C E
4 - D R AIN
- B -
1 .32 ( .052)1.22 ( .048)
3X0.55 ( .022)0.46 ( .018)
2.92 ( .115)2.64 ( .104)
4.69 ( .185)4.20 ( .165)
3X0.93 ( .037)0.69 ( .027)
4.06 ( .160)3.55 ( .140)
1.15 ( .045) MI N
6.47 ( .255)6.10 ( .240)
3.78 ( .149)3.54 ( .139)
- A -
10.54 ( .415)10.29 ( .405)2.87 ( .113)
2.62 ( .103)
15.24 ( .600)14.84 ( .584)
14.09 ( .555)13.47 ( .530)
3X1.40 ( .055)1.15 ( .045)
2.54 ( .100)
2X
0.36 ( .014) M B A M
4
1 2 3
N O T E S :
1 D IMEN SION IN G & TOL ER AN C IN G PER AN SI Y1 4 .5 M, 1 9 8 2 . 3 OU TL IN E C ON FOR MS TO JED EC OU TL IN E TO-2 2 0 AB.
2 C ON TR OL L IN G D IMEN SION : IN C H 4 H EATSIN K & L EAD MEASU R E MEN TS D O N OT IN C L U D E BU R R S.
P A R T N U M B E RI N T E R N A T I O N A L
RECTIF IER L O G O
EXAMP L E : THIS IS AN IRF1 0 1 0W I T H A S S E M B L YL O T C O D E 9 B 1 M
A S S E M B L Y
L O T C O D E
D A T E C O D E
( Y Y W W )
Y Y = Y E A R
W W = W E E K
9 2 4 6
IRF1 0 1 0
9 B 1 M
A
Part Marking Information
TO-220AB
Package OutlineTO-220AB Outline
Dimensions are shown in millimeters (inches)
WORLD HEADQUARTERS:233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN:Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020IR CANADA:15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590IR ITALY:Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086IR SOUTHEAST ASIA:1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936http://www.irf.com/ Data and specifications subject to change without notice. 4/99
-
8/12/2019 irf5305
9/9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/