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IRF5305HEXFETPower MOSFET

PD - 91385B

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET Power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal resistanceand low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Parameter Max. Units

ID@ TC= 25C Continuous Drain Current, VGS@ -10V -31

ID@ TC= 100C Continuous Drain Current, VGS@ -10V -22 A

IDM Pulsed Drain Current -110

PD @TC= 25C Power Dissipation 110 W

Linear Derating Factor 0.71 W/C

VGS Gate-to-Source Voltage 20 V

EAS Single Pulse Avalanche Energy 280 mJ

IAR Avalanche Current -16 A

EAR Repetitive Avalanche Energy 11 mJ

dv/dt Peak Diode Recovery dv/dt -5.0 V/ns

TJ Operating Junction and -55 to + 175

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C

Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)

Absolute Maximum Ratings

Parameter Typ. Max. Units

RJC Junction-to-Case 1.4

RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W

RJA Junction-to-Ambient 62

Thermal Resistance

VDSS= -55V

RDS(on)= 0.06

ID= -31A

TO-220AB

Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated

Description

3/3/00

S

D

G

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Parameter Min. Typ. Max. Units Conditions

IS Continuous Source Current MOSFET symbol

(Body Diode)

showing the

ISM Pulsed Source Current integral reverse

(Body Diode)

p-n junction diode.

VSD Diode Forward Voltage -1.3 V TJ= 25C, IS= -16A, VGS= 0V

trr Reverse Recovery Time 71 110 ns TJ= 25C, IF= -16A

Qrr Reverse RecoveryCharge 170 250 nC di/dt = -100A/s

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -55 V VGS= 0V, ID= -250A

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient -0.034 V/C Reference to 25C, ID= -1mA

RDS(on) Static Drain-to-Source On-Resistance 0.06 VGS= -10V, ID= -16A

VGS(th) Gate Threshold Voltage -2.0 -4.0 V VDS= VGS, ID= -250A

gfs Forward Transconductance 8.0 S VDS= -25V, ID= -16A

-25A

VDS= -55V, VGS= 0V

-250 VDS= -44V, VGS= 0V, TJ= 150C

Gate-to-Source Forward Leakage 100 VGS= 20V

Gate-to-Source Reverse Leakage -100nA

VGS= -20V

Qg Total Gate Charge 63 ID= -16A

Qgs Gate-to-Source Charge 13 nC VDS= -44V

Qgd Gate-to-Drain ("Miller") Charge 29 VGS= -10V, See Fig. 6 and 13 td(on) Turn-On Delay Time 14 VDD= -28V

tr Rise Time 66 ID= -16A

td(off) Turn-Off Delay Time 39 RG= 6.8

tf Fall Time 63 RD= 1.6, See Fig. 10

Between lead,

6mm (0.25in.)

from package

and center of die contact

Ciss Input Capacitance 1200 VGS= 0V

Coss Output Capacitance 520 pF VDS= -25V

Crss Reverse Transfer Capacitance 250 = 1.0MHz, See Fig. 5

nH

Electrical Characteristics @ TJ= 25C (unless otherwise specified)

LD Internal Drain Inductance

LS Internal Source Inductance

IGSS

ns

4.5

7.5

IDSS Drain-to-Source Leakage Current

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 ) ISD -16A, di/dt -280A/s, VDD V(BR)DSS,

TJ 175C

Notes:

VDD = -25V, starting TJ = 25C, L = 2.1mH

RG = 25, IAS = -16A. (See Figure 12)

Pulse width 300s; duty cycle2%.

-31

-110

A

S

D

G

S

D

G

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Fig 4.Normalized On-ResistanceVs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1

10

10 0

1 0 0 0

0.1 1 10 10 0

D

DS

2 0 s P U L S E W I D THT = 25Cc A

-I

,D

rain-to-Source

C

urrent(A)

-V , Drain-to-Source Vol tage (V)

VGS

TOP - 15V

- 10V - 8.0V

- 7.0V - 6.0V

- 5.5V - 5.0V

BOTTOM - 4.5V

-4.5V

1

10

10 0

1000

0.1 1 10 100

D

D S

A

-I

,Drain-to-Source

Current(A)

-V , Drain-to-Source Vol tage (V)

VGS

TOP - 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

BOTTOM - 4.5V

-4 .5V

2 0 s P U L S E W I D T HT = 175CC

1

10

10 0

4 5 6 7 8 9 1 0

T = 25CJ

T = 175CJ

A

V = -25V2 0 s P U L S E W ID TH

DS

G S-V , Gate- to-Source Vol tage (V)

D

-I

,Drain-to-Source

Current

(A)

0. 0

0. 5

1. 0

1. 5

2. 0

-60 -40 -20 0 2 0 4 0 6 0 8 0 1 0 0 12 0 1 4 0 1 6 0 1 80

JT , Junct ion Tem perature (C)

R

,

Drain-to-Source

On

Resistance

DS(on)

(Norm

alized)

A

I = -27A

V = -10V

D

G S

J J

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 7. Typical Source-Drain DiodeForward Voltage

0

50 0

1000

1500

2000

2500

1 10 100

C,

Capacitance

(pF)

A

V = 0 V , f = 1 M H zC = C + C , C S H O R T E DC = CC = C + C

G S

iss gs gd ds

r ss gd

oss ds gdC is s

C os s

C rs s

D S-V , Drain-to-Sourc e Voltage (V)

0

4

8

12

16

20

0 10 20 30 40 50 60

Q , Tota l Gate Charge (nC)G

A

FO R TEST C IRCUITS E E F I G U R E 1 3

V = -44V

V = -28V

I = -16A

GS

-V

,G

ate-to-Source

Voltage

(V)

D

D S

D S

10

10 0

1 0 0 0

0.4 0.8 1.2 1.6 2.0

T = 25CJ

V = 0 VG S

SD

SD

A

-I

,Reverse

Drain

Current(

A)

-V , Source- to -Dra in Vo l tage (V)

T = 175CJ

1

10

10 0

1000

1 10 100

O PERA TIO N IN THIS AREA L IMITED B Y R DS(on)

100s

1m s

10m s

A

T = 25 CT = 175CSingle Pulse

C

J

DS-V , Drain-to-Source Vol tage (V)

D-I

,Drain

Current(A)

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Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.Case Temperature

VDS

-10V

Pulse Width 1 sDuty Factor 0.1 %

RD

VGS

VDD

RG

D.U.T.

VDS

90%

10%

VGS

td(on) tr td(off) tf

+

-

25 50 75 100 125 150 1750

5

10

15

20

25

30

35

T , Case Temperature ( C)

-I

,DrainCurrent(A)

C

D

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

ThermalResponse

(Z

)

1

thJC

0.010.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE(THERMAL RESPONSE)

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Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche EnergyVs. Drain Current

QG

QGS QGD

VG

Charge

-10V

D.U.T. VDS

IDIG

-3mA

VGS

.3F

50K

.2F12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

0

10 0

20 0

30 0

40 0

50 0

60 0

70 0

25 50 75 100 125 150 175

J

E

,

Single

Pulse

Avalanche

Energy(m

J)

AS

A

Start ing T , Junc tion Tem perature (C)

V = -25V

ITOP -6 .6A -11AB O T T O M - 1 6 A

D D

D

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V (BR)DSS

IA S

R G

IA S

0 . 01tp

D.U.T

LV D S

+

-

VDD

D R I V E RA

- 2 0 V

15 V

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Peak Diode Recovery dv/dt Test Circuit

P.W.Period

di/dt

Diode Recoverydv/dt

Ripple 5%

Body Diode Forward Drop

Re-AppliedVoltage

ReverseRecoveryCurrent

Body Diode ForwardCurrent

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =P.W.

Period

+

-

+

+

+-

-

-

RGVDD

dv/dt controlled by RG ISDcontrolled by Duty Factor "D" D.U.T. - Device Under Test

D.U.TCircuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

* Reverse Polarity for P-Channel** Use P-Channel Driver for P-Channel Measurements

*

VGS*

**

[ ]

[ ]

***VGS= 5.0V for Logic Level and 3V Drive Devices

[ ] ***

Fig 14. For P-Channel HEXFETS

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L EAD ASSIGN MEN TS

1 - GATE

2 - D R AIN

3 - SOU R C E

4 - D R AIN

- B -

1 .32 ( .052)1.22 ( .048)

3X0.55 ( .022)0.46 ( .018)

2.92 ( .115)2.64 ( .104)

4.69 ( .185)4.20 ( .165)

3X0.93 ( .037)0.69 ( .027)

4.06 ( .160)3.55 ( .140)

1.15 ( .045) MI N

6.47 ( .255)6.10 ( .240)

3.78 ( .149)3.54 ( .139)

- A -

10.54 ( .415)10.29 ( .405)2.87 ( .113)

2.62 ( .103)

15.24 ( .600)14.84 ( .584)

14.09 ( .555)13.47 ( .530)

3X1.40 ( .055)1.15 ( .045)

2.54 ( .100)

2X

0.36 ( .014) M B A M

4

1 2 3

N O T E S :

1 D IMEN SION IN G & TOL ER AN C IN G PER AN SI Y1 4 .5 M, 1 9 8 2 . 3 OU TL IN E C ON FOR MS TO JED EC OU TL IN E TO-2 2 0 AB.

2 C ON TR OL L IN G D IMEN SION : IN C H 4 H EATSIN K & L EAD MEASU R E MEN TS D O N OT IN C L U D E BU R R S.

P A R T N U M B E RI N T E R N A T I O N A L

RECTIF IER L O G O

EXAMP L E : THIS IS AN IRF1 0 1 0W I T H A S S E M B L YL O T C O D E 9 B 1 M

A S S E M B L Y

L O T C O D E

D A T E C O D E

( Y Y W W )

Y Y = Y E A R

W W = W E E K

9 2 4 6

IRF1 0 1 0

9 B 1 M

A

Part Marking Information

TO-220AB

Package OutlineTO-220AB Outline

Dimensions are shown in millimeters (inches)

WORLD HEADQUARTERS:233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

IR GREAT BRITAIN:Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020IR CANADA:15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY:Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590IR ITALY:Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST:K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086IR SOUTHEAST ASIA:1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936http://www.irf.com/ Data and specifications subject to change without notice. 4/99

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Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/