-
Fe
DeTheandampattheTo-
TyTa=
Pa
Fre
Ga
Ga
In
Ou
Ou
OI
Po
Op
Th
Th
eatures:• 30 dB G• 33 dBm• OIP3 45• 26.0 dB• Fully M• Interna• Surface• MTTF >
escriptioe MMA-4459d 5.9 GHz fre
mplifier is 26 dttern is 802.1
e output powe-Point) radio
ypical R=25 ºC, Z0=5
arameter
equency R
ain (Typ / M
ain Flatnes
put Return
utput Retur
utput P1dB
IP3
out @ 2.5%
perating Cu
hermal Res
hermal Res
: Gain m P-1dB 5 dBm Bm Linear PoMatched Inpu
l Bias Tee e Mount Pac> 100 years @
on: 33H-02 is a p
equency bandBm linear pow6x 64QAM. T
er stage of Wiapplications f
RF Perfo50 ohm
Range
Min) s (Typ / M
n Loss
rn Loss
B
% EVM
urrent Ran
sistance (D
sistance (O
out @ 2.5% Et and Output
kage@ 85ºC ambient temperat
power amplified. Based on awer at 2.0% E
This linear powMax and WLA
for this band.
rmance
Max)
ge
Driver Stage
Output Stag
EVM (802.11 6t for Easy Ca
er with the Stadvanced robuEVM and achwer amplifier AN infrastruc
Units
MHz
dB
+/-dB
dB
dB
dBm
dBm
dBm
mA
e) °C /W
ge) °C /W
64QAM) ascade
ure
ate-of-the-Artust HFET devieves an ACPalso has high
ctures and acc
: Vdd1= 7.5V,Vdd2= 7.5V, Vgg1= -0.8V, Vgg2= -0.8V, Idq1=410mA
s
B
W
W
M4.
t linear powervice technologPR better thah gain. Ideal acess points. It
T
MA-44.4 – 5.9 GHz
Lin
r-added-efficiegy, the linearin -38 dBc. Tapplications int also can be
Typical Data
4400-5900
29 / 33
2.5 / 4.5
10
7
33
45
26.0
1050
20
16
45933z 2W High Enear Power A
ency betweenity of this powhe modulationclude the driused for PTP
a
H-02Efficiency Amplifier
n 4.4 GHz wer n test ver and
P (Point-
Idq2=622 mA,
Updated 08/2019 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538510-651-6700 FAX 510-952-400 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved ©Please visit MwT website for information on MwT MMIC products.
Page 1 of 8
-
TyIdq
ypical Rq2=620mA, Z
4.24.0
30
31
32
33
34
35
36
29
37
Gai
n (d
b)
M
4.4.40
31.5
32.0
32.5
33.0
33.5
34.0
34.5
31.0
35.0
P1dB
(dBm
)
P1dB vs Freq
RF PerfoZ0=50 ohm, T
4.4 4.6 4.8Freq
MA445933H
65 4.90Fre
quency MMA445933H02 V
rmanceTa=25 ºC
8 5.0 5.2 5quency (GHz)
H-02 Gain Re
5.15 5.40equency (GHz)
Vdd=7.5, Vgg=-08, Idd1=4
: Vdd1=7.5V
.4 5.6 5.8 6
esponse
5.65
416mA, Idd2=619mA
V,Vdd2=7.5V,
6.0
-3
-2
-2
-1
-1
-3R
etur
n Lo
ss (d
B)
5.90
4
4
4
4
4
4
4
4
4
4
5
OIP
3 (d
Bm)
V,
4.2 4.44.0
30
25
20
15
10
-5
35
0MMA44
4.454.504.554.604.654.704.754.80
4.40
41
42
43
44
45
46
47
48
49
40
50OIP3 and Idd v
Vgg1=-0.8, Vgg2=-0.8V,
4 4.6 4.8 5Frequen
459H02 Ret4
804.854.904.955.005.055.105.155.205.25
Frequency (GH
vs Freqency Vdd1=Vdd
Idq1=410mA
.0 5.2 5.4ncy (GHz)
urn Loss Re
525
5.305.355.405.455.505.555.605.655.70
Hz)
2=7.5V, Vgg1=Vgg2=-
A ,
5.6 5.8 6.0
esponse
570
5.755.805.855.90
940
980
1020
1060
900
1100
Idd (mA)
0.8
M4MA-4445933..4 – 5.9 GHzz 2W High
Linnear Power
H-02EEfficiency AAmplifier
Updated 08/2019 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538510-651-6700 FAX 510-952-400 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved ©Please visit MwT website for information on MwT MMIC products.
Page 2 of 8
-
MSY
Ig
*Op
MaximumYMBOL P
Vdd1 Vdd2 Vgg1 Vgg2 Idq1 Idq2
g1 and Ig2 Ip
Pdiss Pin max
Tstg peration of this de
m RatingPARAMETER
Drain-SouDrain-SourGate-SouGate-Sour
Drain Drain C
PDC
R
Stoevice above any
98
1
2
3
4
5
6
7
8
0
9
EVM
(%)
EVM
EVM
EVM
EVM
gs: (Ta= 25RS rce Voltage Drce Voltage Orce Voltage Drce Voltage OCurrent DriveCurrent OutpuGate Curren
inch-Off CurrPower Dissip
RF Input Pow
rage Temperone of these pa
10 11 12 1
E
M4p4
M5p0
M5p5
M5p9
5 °C)*
Driver StageOutput StageDriver Stage Output Stageer Stage ut Stage
nt rent pation wer
ature rameters may ca
13 14 15 16Burs
EVM vs P
UNITSV V V V
mA mA mA mA W
dBm
ºC ause permanent
6 17 18 19st Power (d
out over
A
damage.
9 20 21 22 2dBm)
Frequenc
ABSOLUTE M10 10 -5 -5
50075010 10 9.0+10
-55 to
23 24 25 26
cy
MAXIMUM
0 0
0 0
150
6 27 28
M4MA-4445933..4 – 5.9 GHzz 2W High
Linnear Power
H-02EEfficiency AAmplifier
Tch Chaannel Temperrature ºC 1755 Toper Operating Temperature ºC -40 to +85
Updated 08/2019 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538510-651-6700 FAX 510-952-400 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved ©Please visit MwT website for information on MwT MMIC products.
Page 3 of 8
-
Tyypical SIdq1=410mA, Idq2=620mA, Z0=50 ohm, Ta=25º
S-paramf req
4.000 G...4.100 G...4.200 G...4.300 G...4.400 G...4.500 G...4.600 G...4.700 G...4.800 G...4.900 G...5.000 G...5.100 G...5.200 G...5.300 G...5.400 G...5.500 G...5.600 G...5.700 G...5.800 G...5.900 G...6.000 G...
Scatterin
eeters VdmagS11
0.6450.5830.5070.4050.3030.2300.1740.1260.1090.1270.1540.1890.2530.3160.3570.3990.4350.4510.4580.4620.465
ng Para
dd1=Vdd2 =AngS11
32.28519.2413.416
-13.491-28.862-43.280-60.629-77.940-97.370
-120.196-141.350-153.388-162.215-175.950169.576158.603147.247137.700131.897128.232123.778
m
mmeters
=7.5, Vgg1magS21
43.51950.77056.88758.22960.83558.59256.34057.16354.40251.02661.09849.49357.43459.11350.82150.85445.40238.62335.01331.30728.815
A
--
--
1=Vgg2=-AngS21
-99.628128.986160.542171.005137.356113.08489.10560.09043.45318.963-5.354
-24.139-52.760-79.554-99.637137.348151.993177.226157.753137.326115.352
ma
2.8
0.8, Idd1=agS12
0.0010.0010.0010.0010.0010.0010.0010.0010.0010.0010.001
849E-40.0010.0010.0010.0020.0020.0020.0020.0020.003
Ang
91010999989
121115
-17-1716171616161617
=416mA, IdgS12
97.67103.29804.69999.81196.20999.81097.31086.10994.20528.27317.39958.15971.23678.47663.28376.44669.97168.66869.71862.60370.218
mag
000000000000000000000
dd2=620mgS22
0.0720.0290.0390.0850.1410.1750.2210.2650.2910.3260.3860.4230.4430.4630.4370.3660.2940.2240.1520.0840.051
AngS
2258
136155147141137128122119111101917761483729252972
mAS22
2.2568.4336.7945.7117.883.579
7.4838.5302.6889.347.612.495.180
7.581.712
8.7757.3509.0445.4869.2342.184
M4MA-4445933..4 – 5.9 GHzz 2W High
Linnear Power
H-02EEfficiency AAmplifier
:Vdd1= 7.5V,Vdd2= 7.5V, Vgg1= -0.8V, Vgg2= -0.8V,
Updated 08/2019 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538510-651-6700 FAX 510-952-400 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved ©Please visit MwT website for information on MwT MMIC products.
Page 4 of 8
-
M
IN
Mechanic
NPUT SIDE DO
cal Infor
.43OT
Pi1 D
mation:
.2
30
in Number Dot Top Left
2 3 4 5
A
F
270
.15 MAX
Pack
Pin DesiSignal N
t VggGNDRF IGNDVdd
All dimensi
Figure 1 Fu
X.
O
.024 TYP
.050 T
kage Outlin
ignation (ToName Pin1
D In D d1
ions are in
unctional D
GROUND PA
OUTPUT PAD
P. 10 PLCS.
TYP. 2 PLCS.
ne
op View) n Number
10 9 8 7 6
inches
Diagram
.250
AD
Signal NamVgg2 GND
RF OutGND Vdd2
GAP. .003
.050 TY
INPUT PA.040 TYP. 2
me
t
3 TYP.
YP. 8 PLCS.
AD2 PLCS.
M4MA-4445933..4 – 5.9 GHzz 2W High
Linnear Power
H-02EEfficiency AAmplifier
Updated 08/2019 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538510-651-6700 FAX 510-952-400 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved ©Please visit MwT website for information on MwT MMIC products.
Page 5 of 8
-
Fopeagroconsecabsat tseetwo
Figur
Fig
llowed up witak current coound loops. Untinuity betwecure the boarsence of swethe gate and en from the Vo zero ohm re
re 1 Evaluation
gure 2 Hole La
h larger valuenditions. The
Use of stitch geen the top anrd to the chasat soldering tdrain inputs.
Vgs power supesistors are us
n board
ayout
e capacitors, e DC ground vground via hond bottom grosis; this also he board to th A 56 ohm repply and redused at the inp
App
The eRogeincludMMA-gain astagewhichbias tcapacrequirtempe
The Puniforshownconducapacreson0603 a goo
100pf or 1000via holes sho
oles can help ound layers. Tminimizes grohe chassis. Tesistor is inseucing the risk put and outpu
plication N
evaluation boars’s 4003 mat
des four DC in-445933H-02and high linea amplifier ass
h includes fouees are built-citors are inclured on the DCerature range
PCB requires rmly over the n in Figure 2.uctive epoxy fcitor bypassinnance at the fr
from AVX haod choice for t
0pf and 2.2uFuld be laid oucontrol the reTwo mountingound currentThe internal berted in seriesof video oscilt 50 ohms tra
Note
ard, shown interial, 20 mil tnput connecti
2 shown in thearity amplifiersembly die attur bias entries-in to the packuded with ass
C lines. The ae of approxima
via holes withcenter pad fo The via holefor best therm
ng near the amrequency of o
as a series resthe first bypas
F can be usedut to minimizeeturn current ag holes are uloops and im
bias tees insids to the gate inllations. DC baces. The MM
n Figure 1, is fthick, 2 oz coons and two
e center of bo. The MMA-4tach to the m
s and two RF kage. Small vsembly. Propamplifier operately 85°C.
h a diameter or thermal relies can be bacmal performanmplifier shouloperation. A ssonance at 5.ss capacitor.
d to maintain ed inductive reand also mainused near the
mproves thermde the PA arencreasing theblocks are inc
MA-445933H-
fabricated witopper weight aRF lines. The
oard is a 2 wa445933H-02 iodified ‘02’ paconnections.
value bypassiper bypassingrates over a
of 20 mils plaief and RF gro
ck filled with nce. The choid have a shosmall capacit.5 GHz and w
voltage stabieturns associntain ground PA assembly
mal conductivie quarter-wavee effective impcluded with as02 has a nois
th and e att high is a 3 ackage The ng
g is still
aced ound as
ce of rt circuit tor 3.9pf will make
lity under ated with
y to ty in the e stubs pedance ssembly; se figure
M4MA-4445933..4 – 5.9 GHzz 2W High
Linnear Power
H-02EEfficiency AAmplifier
Updated 08/2019 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538510-651-6700 FAX 510-952-400 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved ©Please visit MwT website for information on MwT MMIC products.
Page 6 of 8
-
lesclaFigmAnegopeinp
Thethesho2%EqVd
Thedeg
Theand
ss than 9.0 dBass ‘A’ amplifiegure 4 is plotteA from Idq = 1gative slope oerations as cl
put drive level
e two tone line amplifier froown in Figure
% and 2.5%. Tualization is ed1=Vdd2=7.5
e gain stabilitg and varies 3
e EVM versusd is plotted at
F
7
7.5
8
8.5
9
4.4
Noi
se Fi
gure
(dB)
B. A plot of noer. At small sed from 4.4 to1020 mA. Thof -0.07 dB/℃lass B is doab is 17 dBm.
nearity shownm 4.4 to 4.9 G
e 5 is measureThe modulatioenabled when5V and the ga
ty over tempe3 dB at a fix f
s burst powert two spot freq
Figure 2 N
4.5 4.6
Freq
NF vs Fr
oise figure vesignal levels to 5.9 GHz. This bias condit℃. Other classble by backing
in Figure 4 isGHz. At 22 ded across theon is 802.16xn measuring Eate voltage is
erature is showfrequency.
r, shown in Fiquencies poin
oise Figur
6 4.7
quency (GHz)
equency
ersus frequenche amplifier ohe drain curreion for this ams operations cg off the PA s
s swept acrosBm per tone
e frequency rax and each fraEVM performaVgg1=Vgg2=
wn in Figure 6
igures 8 and nts 4.4 GHz a
re
4.8 4.9
cy at Idq is shoperates at Ident Idd1 and Implifier is clascan be set bystage controlle
ss a power rathe IMD3 is 5
ange from 4.4ame cycle hasance. The M
=-0.8V for an
6 and 7. The
9 is better thaand 4.9 GHz f
9
P1d
BN
10C
P1d
B_2
5CP
1dB
_70C
hown in Figurdq. A plot of dd2 increasess A. The gay adjusting theed by Vgg2 c
nge from 15 t50 dBc and O4 to 4.9 GHz as a 10 msec d
MMA amplifier Idq=1020 mA
e temperature
an 25.5 dBm from 10C to 8
Figur
4.54.6
4.4
32.533.033.534.034.5
32.0
35.0
P1d
B_N
10C
P1
re 3. The amP1dB versus
es over a rangin versus teme gate controlcontrol voltage
to 25 dBm peOIP3 is 47 dBmat error vectoduration and bias conditio
A.
e range was ta
for an EVM =85C degrees.
re 3 P1dB a
46
4.74.84.95.05.1
Freque
1dB vs Temper
plifier behave frequency sh
ge of 1050 mAmperature hasl voltage(s). Se. The maxim
er tone at the m. The Burstr magnitudesruns continuo
on is
aken at 10 C
=2% over tem
and Ids
51
5.25.35.45.5
ency (GHz)
rature and Freq
es like a hown in A to 1100 s a Such
mum
output of t power
s equal to ously.
to 85 C
mperature
5.65.75.85.9
quency
M4MA-4445933..4 – 5.9 GHzz 2W High
Linnear Power
H-02EEfficiency AAmplifier
Updated 08/2019 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538510-651-6700 FAX 510-952-400 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved ©Please visit MwT website for information on MwT MMIC products.
Page 7 of 8
-
EVM
(%)
Fig
40455055606570
15 16
IMD3
(dBc
)
Tw
IM
Fig
0
1
2
3
4
5
6
10 12
EVM
(%)
EVM an
gure 8 EVM
44.0
34
35
36
37
33
38
Gai
n_N
10C
Gai
n_25
CG
ain_
50C
Gai
n_70
C
17 18 19
Powe
wo Tone IMD
D3_4.4 GHz IM
Figure 4
gure 6 Gain
14 16 18
Burst Po
nd Ids vs Burst
vs Burst P
4.2 4.4 4.6 4
Gain versus
9 20 21 22
er Per Tone (dBm)
D3 vs Tone Po
MD3_4.7GHz IM
Two Tone
vs Tempera
20 22
ower (dBm)
t Power over T
ower and T
4.8 5.0 5.2 5freq, GHz
Frequency and Tem
2 23 24 2
wer
MD3_4.9GHz
e
ature
24 26 28
Temperature
Temperature
5.4 5.6 5.8 6
mperature
25
0.775
0.8
0.825
0.85
0.875
0.9
0.925
Ids (
A)
0
1
2
3
4
5
6
EVM
(%)
e Figu
6.0-0-0-00000
-0
0Te
mpe
ratu
re_C
oeff_
Abov
e_25
CTe
mpe
ratu
re_C
oeff_
Belo
w_2
5C
24.525
25.526
26.527
27.5
4.4
Burs
t Pow
er (d
Bm)
B
F
Figure 7 G
10 12 14
EVM and Ids
ure 9 EVM vs
4.2 4.44.0
0.030.020.010.000.010.020.03
0.04
0.04Gain-Temperat
4.5 4.6
Frequ
Burst Power v
BP_2%
igure 5 Bu
Gain-Tempe
16 18 20
Burst Power (dB
s vs Burst Powe
s Burst Pow
4 4.6 4.8freq
ure Coefficient (70
4.7
uency (GHz)
s Frequency
BP_2.5%
urst Power
erature Coe
22 24 26
m)
er over Temper
wer and Tem
5.0 5.2 5.4q, GHz
C to 25C and 25C
4.8 4.9
efficient
0.775
0.8
0.825
0.85
0.875
0.9
0.925
28
Ids (
A)
rature
mperature
5.6 5.8 6.0
to -10C) vs Freque
0
e
M4MA-4445933..4 – 5.9 GHzz 2W High
Linnear Power
H-02EEfficiency AAmplifier
Updated 08/2019 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538510-651-6700 FAX 510-952-400 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved ©Please visit MwT website for information on MwT MMIC products.
Page 8 of 8
TahrahStamp
TahrahStamp