mma-445933h-02 rev b (2)mwtinc.com/wp-content/uploads/2017/01/mma-445933h-02.pdfgs power sup sistors...

Fe

DeTheandampattheTo-

TyTa=

Pa

Fre

Ga

Ga

In

Ou

Ou

OI

Po

Op

Th

Th

eatures:• 30 dB G• 33 dBm• OIP3 45• 26.0 dB• Fully M• Interna• Surface• MTTF >

escriptioe MMA-4459d 5.9 GHz fre

mplifier is 26 dttern is 802.1

e output powe-Point) radio

ypical R=25 ºC, Z0=5

arameter

equency R

ain (Typ / M

ain Flatnes

put Return

utput Retur

utput P1dB

IP3

out @ 2.5%

perating Cu

hermal Res

hermal Res

: Gain m P-1dB 5 dBm Bm Linear PoMatched Inpu

l Bias Tee e Mount Pac> 100 years @

on: 33H-02 is a p

equency bandBm linear pow6x 64QAM. T

er stage of Wiapplications f

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n Loss

rn Loss

B

% EVM

urrent Ran

sistance (D

sistance (O

out @ 2.5% Et and Output

kage@ 85ºC ambient temperat

power amplified. Based on awer at 2.0% E

This linear powMax and WLA

for this band.

rmance

Max)

ge

Driver Stage

Output Stag

EVM (802.11 6t for Easy Ca

er with the Stadvanced robuEVM and achwer amplifier AN infrastruc

Units

MHz

dB

+/-dB

dB

dB

dBm

dBm

dBm

mA

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ge) °C /W

64QAM) ascade

ure

ate-of-the-Artust HFET devieves an ACPalso has high

ctures and acc

: Vdd1= 7.5V,Vdd2= 7.5V, Vgg1= -0.8V, Vgg2= -0.8V, Idq1=410mA

s

B

W

W

M4.

t linear powervice technologPR better thah gain. Ideal acess points. It

T

MA-44.4 – 5.9 GHz

Lin

r-added-efficiegy, the linearin -38 dBc. Tapplications int also can be

Typical Data

4400-5900

29 / 33

2.5 / 4.5

10

7

33

45

26.0

1050

20

16

45933z 2W High Enear Power A

ency betweenity of this powhe modulationclude the driused for PTP

a

H-02Efficiency Amplifier

n 4.4 GHz wer n test ver and

P (Point-

Idq2=622 mA,

Updated 08/2019 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538510-651-6700 FAX 510-952-400 WEB www.mwtinc.com

Data contained herein is subject to change without notice. All rights reserved ©Please visit MwT website for information on MwT MMIC products.

Page 1 of 8

TyIdq

ypical Rq2=620mA, Z

4.24.0

30

31

32

33

34

35

36

29

37

Gai

n (d

b)

M

4.4.40

31.5

32.0

32.5

33.0

33.5

34.0

34.5

31.0

35.0

P1dB

(dBm

)

P1dB vs Freq

RF PerfoZ0=50 ohm, T

4.4 4.6 4.8Freq

MA445933H

65 4.90Fre

quency MMA445933H02 V

rmanceTa=25 ºC

8 5.0 5.2 5quency (GHz)

H-02 Gain Re

5.15 5.40equency (GHz)

Vdd=7.5, Vgg=-08, Idd1=4

: Vdd1=7.5V

.4 5.6 5.8 6

esponse

5.65

416mA, Idd2=619mA

V,Vdd2=7.5V,

6.0

-3

-2

-2

-1

-1

-3R

etur

n Lo

ss (d

B)

5.90

4

4

4

4

4

4

4

4

4

4

5

OIP

3 (d

Bm)

V,

4.2 4.44.0

30

25

20

15

10

-5

35

0MMA44

4.454.504.554.604.654.704.754.80

4.40

41

42

43

44

45

46

47

48

49

40

50OIP3 and Idd v

Vgg1=-0.8, Vgg2=-0.8V,

4 4.6 4.8 5Frequen

459H02 Ret4

804.854.904.955.005.055.105.155.205.25

Frequency (GH

vs Freqency Vdd1=Vdd

Idq1=410mA

.0 5.2 5.4ncy (GHz)

urn Loss Re

525

5.305.355.405.455.505.555.605.655.70

Hz)

2=7.5V, Vgg1=Vgg2=-

A ,

5.6 5.8 6.0

esponse

570

5.755.805.855.90

940

980

1020

1060

900

1100

Idd (mA)

0.8

M4MA-4445933..4 – 5.9 GHzz 2W High

Linnear Power

H-02EEfficiency AAmplifier



Page 2 of 8

MSY

Ig

*Op

MaximumYMBOL P

Vdd1 Vdd2 Vgg1 Vgg2 Idq1 Idq2

g1 and Ig2 Ip

Pdiss Pin max

Tstg peration of this de

m RatingPARAMETER

Drain-SouDrain-SourGate-SouGate-Sour

Drain Drain C

PDC

R

Stoevice above any

98

1

2

3

4

5

6

7

8

0

9

EVM

(%)

EVM

EVM

EVM

EVM

gs: (Ta= 25RS rce Voltage Drce Voltage Orce Voltage Drce Voltage OCurrent DriveCurrent OutpuGate Curren

inch-Off CurrPower Dissip

RF Input Pow

rage Temperone of these pa

10 11 12 1

E

M4p4

M5p0

M5p5

M5p9

5 °C)*

Driver StageOutput StageDriver Stage Output Stageer Stage ut Stage

nt rent pation wer

ature rameters may ca

13 14 15 16Burs

EVM vs P

UNITSV V V V

mA mA mA mA W

dBm

ºC ause permanent

6 17 18 19st Power (d

out over

A

damage.

9 20 21 22 2dBm)

Frequenc

ABSOLUTE M10 10 -5 -5

50075010 10 9.0+10

-55 to

23 24 25 26

cy

MAXIMUM

0 0

0 0

150

6 27 28

M4MA-4445933..4 – 5.9 GHzz 2W High

Linnear Power


Tch Chaannel Temperrature ºC 1755 Toper Operating Temperature ºC -40 to +85



Page 3 of 8

Tyypical SIdq1=410mA, Idq2=620mA, Z0=50 ohm, Ta=25º

S-paramf req

4.000 G...4.100 G...4.200 G...4.300 G...4.400 G...4.500 G...4.600 G...4.700 G...4.800 G...4.900 G...5.000 G...5.100 G...5.200 G...5.300 G...5.400 G...5.500 G...5.600 G...5.700 G...5.800 G...5.900 G...6.000 G...

Scatterin

eeters VdmagS11

0.6450.5830.5070.4050.3030.2300.1740.1260.1090.1270.1540.1890.2530.3160.3570.3990.4350.4510.4580.4620.465

ng Para

dd1=Vdd2 =AngS11

32.28519.2413.416

-13.491-28.862-43.280-60.629-77.940-97.370

-120.196-141.350-153.388-162.215-175.950169.576158.603147.247137.700131.897128.232123.778

m

mmeters

=7.5, Vgg1magS21

43.51950.77056.88758.22960.83558.59256.34057.16354.40251.02661.09849.49357.43459.11350.82150.85445.40238.62335.01331.30728.815

A

--

--

1=Vgg2=-AngS21

-99.628128.986160.542171.005137.356113.08489.10560.09043.45318.963-5.354

-24.139-52.760-79.554-99.637137.348151.993177.226157.753137.326115.352

ma

2.8

0.8, Idd1=agS12

0.0010.0010.0010.0010.0010.0010.0010.0010.0010.0010.001

849E-40.0010.0010.0010.0020.0020.0020.0020.0020.003

Ang

91010999989

121115

-17-1716171616161617

=416mA, IdgS12

97.67103.29804.69999.81196.20999.81097.31086.10994.20528.27317.39958.15971.23678.47663.28376.44669.97168.66869.71862.60370.218

mag

000000000000000000000

dd2=620mgS22

0.0720.0290.0390.0850.1410.1750.2210.2650.2910.3260.3860.4230.4430.4630.4370.3660.2940.2240.1520.0840.051

AngS

2258

136155147141137128122119111101917761483729252972

mAS22

2.2568.4336.7945.7117.883.579

7.4838.5302.6889.347.612.495.180

7.581.712

8.7757.3509.0445.4869.2342.184

M4MA-4445933..4 – 5.9 GHzz 2W High

Linnear Power


:Vdd1= 7.5V,Vdd2= 7.5V, Vgg1= -0.8V, Vgg2= -0.8V,



Page 4 of 8

M

IN

Mechanic

NPUT SIDE DO

cal Infor

.43OT

Pi1 D

mation:

.2

30

in Number Dot Top Left

2 3 4 5

A

F

270

.15 MAX

Pack

Pin DesiSignal N

t VggGNDRF IGNDVdd

All dimensi

Figure 1 Fu

X.

O

.024 TYP

.050 T

kage Outlin

ignation (ToName Pin1

D In D d1

ions are in

unctional D

GROUND PA

OUTPUT PAD

P. 10 PLCS.

TYP. 2 PLCS.

ne

op View) n Number

10 9 8 7 6

inches

Diagram

.250

AD

Signal NamVgg2 GND

RF OutGND Vdd2

GAP. .003

.050 TY

INPUT PA.040 TYP. 2

me

t

3 TYP.

YP. 8 PLCS.

AD2 PLCS.

M4MA-4445933..4 – 5.9 GHzz 2W High

Linnear Power




Page 5 of 8

Fopeagroconsecabsat tseetwo

Figur

Fig

llowed up witak current coound loops. Untinuity betwecure the boarsence of swethe gate and en from the Vo zero ohm re

re 1 Evaluation

gure 2 Hole La

h larger valuenditions. The

Use of stitch geen the top anrd to the chasat soldering tdrain inputs.

Vgs power supesistors are us

n board

ayout

e capacitors, e DC ground vground via hond bottom grosis; this also he board to th A 56 ohm repply and redused at the inp

App

The eRogeincludMMA-gain astagewhichbias tcapacrequirtempe

The Puniforshownconducapacreson0603 a goo

100pf or 1000via holes sho

oles can help ound layers. Tminimizes grohe chassis. Tesistor is inseucing the risk put and outpu

plication N

evaluation boars’s 4003 mat

des four DC in-445933H-02and high linea amplifier ass

h includes fouees are built-citors are inclured on the DCerature range

PCB requires rmly over the n in Figure 2.uctive epoxy fcitor bypassinnance at the fr

from AVX haod choice for t

0pf and 2.2uFuld be laid oucontrol the reTwo mountingound currentThe internal berted in seriesof video oscilt 50 ohms tra

Note

ard, shown interial, 20 mil tnput connecti

2 shown in thearity amplifiersembly die attur bias entries-in to the packuded with ass

C lines. The ae of approxima

via holes withcenter pad fo The via holefor best therm

ng near the amrequency of o

as a series resthe first bypas

F can be usedut to minimizeeturn current ag holes are uloops and im

bias tees insids to the gate inllations. DC baces. The MM

n Figure 1, is fthick, 2 oz coons and two

e center of bo. The MMA-4tach to the m

s and two RF kage. Small vsembly. Propamplifier operately 85°C.

h a diameter or thermal relies can be bacmal performanmplifier shouloperation. A ssonance at 5.ss capacitor.

d to maintain ed inductive reand also mainused near the

mproves thermde the PA arencreasing theblocks are inc

MA-445933H-

fabricated witopper weight aRF lines. The

oard is a 2 wa445933H-02 iodified ‘02’ paconnections.

value bypassiper bypassingrates over a

of 20 mils plaief and RF gro

ck filled with nce. The choid have a shosmall capacit.5 GHz and w

voltage stabieturns associntain ground PA assembly

mal conductivie quarter-wavee effective impcluded with as02 has a nois

th and e att high is a 3 ackage The ng

g is still

aced ound as

ce of rt circuit tor 3.9pf will make

lity under ated with

y to ty in the e stubs pedance ssembly; se figure

M4MA-4445933..4 – 5.9 GHzz 2W High

Linnear Power




Page 6 of 8

lesclaFigmAnegopeinp

Thethesho2%EqVd

Thedeg

Theand

ss than 9.0 dBass ‘A’ amplifiegure 4 is plotteA from Idq = 1gative slope oerations as cl

put drive level

e two tone line amplifier froown in Figure

% and 2.5%. Tualization is ed1=Vdd2=7.5

e gain stabilitg and varies 3

e EVM versusd is plotted at

F

7

7.5

8

8.5

9

4.4

Noi

se Fi

gure

(dB)

B. A plot of noer. At small sed from 4.4 to1020 mA. Thof -0.07 dB/℃lass B is doab is 17 dBm.

nearity shownm 4.4 to 4.9 G

e 5 is measureThe modulatioenabled when5V and the ga

ty over tempe3 dB at a fix f

s burst powert two spot freq

Figure 2 N

4.5 4.6

Freq

NF vs Fr

oise figure vesignal levels to 5.9 GHz. This bias condit℃. Other classble by backing

in Figure 4 isGHz. At 22 ded across theon is 802.16xn measuring Eate voltage is

erature is showfrequency.

r, shown in Fiquencies poin

oise Figur

6 4.7

quency (GHz)

equency

ersus frequenche amplifier ohe drain curreion for this ams operations cg off the PA s

s swept acrosBm per tone

e frequency rax and each fraEVM performaVgg1=Vgg2=

wn in Figure 6

igures 8 and nts 4.4 GHz a

re

4.8 4.9

cy at Idq is shoperates at Ident Idd1 and Implifier is clascan be set bystage controlle

ss a power rathe IMD3 is 5

ange from 4.4ame cycle hasance. The M

=-0.8V for an

6 and 7. The

9 is better thaand 4.9 GHz f

9

P1d

BN

10C

P1d

B_2

5CP

1dB

_70C

hown in Figurdq. A plot of dd2 increasess A. The gay adjusting theed by Vgg2 c

nge from 15 t50 dBc and O4 to 4.9 GHz as a 10 msec d

MMA amplifier Idq=1020 mA

e temperature

an 25.5 dBm from 10C to 8

Figur

4.54.6

4.4

32.533.033.534.034.5

32.0

35.0

P1d

B_N

10C

P1

re 3. The amP1dB versus

es over a rangin versus teme gate controlcontrol voltage

to 25 dBm peOIP3 is 47 dBmat error vectoduration and bias conditio

A.

e range was ta

for an EVM =85C degrees.

re 3 P1dB a

46

4.74.84.95.05.1

Freque

1dB vs Temper

plifier behave frequency sh

ge of 1050 mAmperature hasl voltage(s). Se. The maxim

er tone at the m. The Burstr magnitudesruns continuo

on is

aken at 10 C

=2% over tem

and Ids

51

5.25.35.45.5

ency (GHz)

rature and Freq

es like a hown in A to 1100 s a Such

mum

output of t power

s equal to ously.

to 85 C

mperature

5.65.75.85.9

quency

M4MA-4445933..4 – 5.9 GHzz 2W High

Linnear Power




Page 7 of 8

EVM

(%)

Fig

40455055606570

15 16

IMD3

(dBc

)

Tw

IM

Fig

0

1

2

3

4

5

6

10 12

EVM

(%)

EVM an

gure 8 EVM

44.0

34

35

36

37

33

38

Gai

n_N

10C

Gai

n_25

CG

ain_

50C

Gai

n_70

C

17 18 19

Powe

wo Tone IMD

D3_4.4 GHz IM

Figure 4

gure 6 Gain

14 16 18

Burst Po

nd Ids vs Burst

vs Burst P

4.2 4.4 4.6 4

Gain versus

9 20 21 22

er Per Tone (dBm)

D3 vs Tone Po

MD3_4.7GHz IM

Two Tone

vs Tempera

20 22

ower (dBm)

t Power over T

ower and T

4.8 5.0 5.2 5freq, GHz

Frequency and Tem

2 23 24 2

wer

MD3_4.9GHz

e

ature

24 26 28

Temperature

Temperature

5.4 5.6 5.8 6

mperature

25

0.775

0.8

0.825

0.85

0.875

0.9

0.925

Ids (

A)

0

1

2

3

4

5

6

EVM

(%)

e Figu

6.0-0-0-00000

-0

0Te

mpe

ratu

re_C

oeff_

Abov

e_25

CTe

mpe

ratu

re_C

oeff_

Belo

w_2

5C

24.525

25.526

26.527

27.5

4.4

Burs

t Pow

er (d

Bm)

B

F

Figure 7 G

10 12 14

EVM and Ids

ure 9 EVM vs

4.2 4.44.0

0.030.020.010.000.010.020.03

0.04

0.04Gain-Temperat

4.5 4.6

Frequ

Burst Power v

BP_2%

igure 5 Bu

Gain-Tempe

16 18 20

Burst Power (dB

s vs Burst Powe

s Burst Pow

4 4.6 4.8freq

ure Coefficient (70

4.7

uency (GHz)

s Frequency

BP_2.5%

urst Power

erature Coe

22 24 26

m)

er over Temper

wer and Tem

5.0 5.2 5.4q, GHz

C to 25C and 25C

4.8 4.9

efficient

0.775

0.8

0.825

0.85

0.875

0.9

0.925

28

Ids (

A)

rature

mperature

5.6 5.8 6.0

to -10C) vs Freque

0

e

M4MA-4445933..4 – 5.9 GHzz 2W High

Linnear Power




Page 8 of 8

TahrahStamp

TahrahStamp

mma-445933h-02 rev b (2)mwtinc.com/wp-content/uploads/2017/01/mma-445933h-02.pdfgs power sup sistors...

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