1

New Photo-mask before bonding

• Center was over exposed with 15nA writing• Overlap region can be seen with even eyes• Good for Si piece alignment while bonding

2

Si was firmly bonded

• Metal stacking for PL pattern: Ti/Ni=80nm/400nm• Metal stacking for EBL pattern: Ti/Ni/Ti/Ni=30nm/300nm/50nm/100nm (blocking

total consumption of Ni)

3

Si Removed

4

Si Removed