new photo-mask before bonding

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1 New Photo-mask before bonding Center was over exposed with 15nA wri erlap region can be seen with even eyes od for Si piece alignment while bonding

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New Photo-mask before bonding. Overlap region can be seen with even eyes Good for Si piece alignment while bonding . Center was over exposed with 15nA writing. Si was firmly bonded. Metal stacking for PL pattern: Ti/Ni=80nm/400nm - PowerPoint PPT Presentation

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Page 1: New Photo-mask before bonding

1

New Photo-mask before bonding

• Center was over exposed with 15nA writing• Overlap region can be seen with even eyes• Good for Si piece alignment while bonding

Page 2: New Photo-mask before bonding

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Si was firmly bonded

• Metal stacking for PL pattern: Ti/Ni=80nm/400nm• Metal stacking for EBL pattern: Ti/Ni/Ti/Ni=30nm/300nm/50nm/100nm (blocking

total consumption of Ni)

Page 3: New Photo-mask before bonding

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Si Removed

Page 4: New Photo-mask before bonding

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Si Removed