Renesas Electronics America Inc.
Power and Standard ProductsConsumer and Industrial Business Unit
June 24, 2010
AGENDA
1) Introduction2) MOSFET3) IGBT4) Triac5) Diode6) Resources and SummaryAppendix
Product Promotion Goals
Win designs and grow revenue by promoting Renesas’ standard products to a broader customer base by:
1. Promoting more product families (not just lvMOSFET).2. Which will address more applications3. And allow us to activate sales thru sales reps, Digikey, and
distribution.
Product Promotion Status
General promotion products:(Parts are price competitive, AE, Marketing, Sample support all available)
20V to 30V MOSFETs Mid-Voltage MOSFETs (40V to 80V is competitive, 80V+ non-competitive) Triacs/Thyristors IGBT’s (Price competitiveness under evaluation)
Limited promotion products: Zener & Schottky Barrier Diodes – Application limited to Mobile Apps Sawn Zener Diodes – Application limited to LED lighting lpSRAM & EEPROM - Price limited Small Power MOSFETs – Price limited
Very Limited promotion products: Li+ Smart Battery IC restricted to just major NBPC OEM - Due to N. American support
limitations PFC to just one test N. American Customer- Due to N. American support limitations Other MSIG Devices - Due to N. American support limitations High Power MOSFETs - Due to non-competitive pricing Other Vregs - Due to non-competitive pricing
How have we won Power Device business?
1) Provide best price:performance for new designs.• Very low switching costs – no software, no training, little loyalty, • Process is:
A. Get application data from customer; for example Vin, Vout, Imax, etc.B. Identify best fit parts thru REA AE’s and Japan AE’sC. Get competitor’s price from customerD. Offer an equal or lower price
2) Or, exploit shortages
Power Device Relative Characteristics
Application voltage, current, and switching frequency requirements dictate which power device is appropriate
From Wikimedia
And Triac
Power Management Devices and Standard Product Group
Tad KeeleyDirector
Tetsuo SatoDirector,
AE & Business Development
Mark De FreitasManager, Product &
Tactical Marketing
Chris LeeManager,
Business Development And Apps Engineering
Anthony O’ScierFAE
(Austin)
Jim ComstockApplication Engineer
Yoko WatanabeManager,
Product Marketing
Jessica YamadaManager,Tactical &
Product Marketing
Discrete, Power, & Standard Product Support Matrix
CUSTOMER PRODUCT TACTICAL APPLICATION BUSINESS DEVMARKETING MARKETING ENGINEERING
LV Power Product Apple, Intel, West Coast Mark De Freitas Mark De Freitas Jim Comstock Tetsuo Sato
LV Power Product AMD, East Coast Mark De Freitas Mark De Freitas Chris Lee Tetsuo Sato
LV Power Product Dell Mark De Freitas Jessica Yamada A O'Scier Chris Lee
Ex- NEC LV Power Product All Yoko Watanabe Yoko Watanabe
A O'Scier (Texas)/Jim Comstock (CA)/Chris Lee (Everywhere Else) Tetsuo Sato
lpSRAM & EEPROM All Jessica Yamada Jessica Yamada Tokyo Tad Keeley
Triacs, IGBTs, Hi Pwr FETs All
Mark De Freitas/Tad Keeley Mark De Freitas Tetsuo Sato (Acting) Tetsuo Sato
Other Gen Purpose & MSIG All Mark De Freitas Mark De Freitas Tokyo Tetsuo Sato
Motor Driver HGST None None Chris Lee (Acting) Tetsuo Sato
RESPONSIBILITIES PRODUCT MARKETING: Market research, channel strategies, sales training, product lifecylce management, promotions, (new product definition)TACTICAL MARKETING: Quotes, Sales support for opportunity management, SMG support for delivery issues.APPLICATION ENGINEERING: Application EngineeringBUSINESS DEV: Product Definition and development support, chipset partner support, etc.
MOSFET
MOSFET: Combined Market Share 20V-100V
1 Toshiba 8.6%
2 Infineon 8.1%
3 ST Micro 7.1%
4 Vishay 6.5%
5 Rohm 6.3%
6 Fairchild 5.9%
7 NXP 4.9%
8 Mitsubishi
4.7%
9 On Semi 4.5%
10 IR 4.0%
11 Renesas 3.6%
12 Fuji Elect 3.4%
13 NECEL 3.4%
14 Panasonic 2.7%
15 Microsem 2.4%
16 Others 23.8%
47.0%
Discrete2008 Billing $17.3B
(Gartner)
1 Fairchild 10.1%
2 Vishay 9.3%
3 Toshiba 7.9%
4 Infineon 6.7%
5 ST Micro 6.3%
6 Fuji Elect, 5.8%
7 Mitsubishi
5.3%
8 IR 4.8%
9 NECEL 4.4%
10 On Semi 3.9%
11 Renesas 3.7%
12 Rohm 3.5%
13 Sanken 3.0%
14 Sanyo 2.6%
15 NXP 2.3%
16 Others 20.4%
38.1%
Power Devices2008 Billing $12.1B
(Marketing Eye)
1 Vishay 13.4%
2 Fairchild 13.0%
3 IR 12.4%
4 NECEL 9.3%
5 Toshiba 8.6%
6 Renesas 7.9%
7 Rohm 6.2%
8 AOL 6.1%
9 Sanyo 4.8%
10 Infineon 4.4%
11 On Semi 3.7%
12 ST Micro 2.4%
13 Others 7.8%
117.1%
LV MOSFET2008 Billing $3.7B
(Marketing Eye)
MOSFET: Ranking and Market Share Summary 20V-100V
Source: Market Eye, March 2009
Vishay
Fairchild
IR
Toshiba
Rohm
Alpha & Omega
Sanyo
Infineon Technologies
On Semi
1
2
3
4
5
6
7
8
9
10
Low Voltage MOSFETs
Renesas Electronics
2009 Rankings
Renesas 17.1%
Vishay 13.4%
Fairchild 13%
IR 12.4%
Toshiba8.6%
Alpha & Omega6.1%
Sanyo 4.8%
Infineon 4.4%
On Semi 3.7%
ST 2.4%
Others7.8%
Rohm 6.2%
2009 Share
LV MOSFET: Application Map by Package
IndustrialMotor, Battery
UPS
What’s Important: Technology • Stable Supply • Quality and Reliability
MOSFET: Capacity and Shipments
Renesas Electronics:Total Low voltage MOSFET package monthly capacity 186Mu/M
0 500 1,000
1.0 billion Renesas Electronics Power Management and General purpose devices shipped each month
Components (1000M)
D-PAK62Mu
D-PAK62Mu
TO-251 14MuTO-251 14MuHWSON 15MuHWSON 15Mu
SOP8 20MuSOP8 20MuWPAK30Mu
WPAK30Mu
TO-220 13MuTO-220 13Mu
TO-220 13MuTO-220 13Mu
LFPAK 11MuLFPAK 11MuTO-263 8MuTO-263 8Mu
Dr.MOS 2MuDr.MOS 2Mu
What’s Important: Technology • Stable Supply • Quality and Reliability
VSOF 6MuVSOF 6MuMini HVSON 5MuMini HVSON 5Mu
PPM level
Defect rate
80 PPB
30 PPB
Single PPB
20092003 Future
PPB level
Defect rate
WW No.1 Quality and Reliability
1 PPM =1 in 1,000,000 units1 PPB =1 in 1,000,000,000 units
What’s Important: Technology • Stable Supply • Quality and Reliability
Leader in MOSFET quality as proven with high-volume customers
Zero failures reported for ten consecutive years
15
Integrated &
High Function
Hig
h F
requency
, H
igh E
ffici
ency
11stst Gen. Gen.DrMOSDrMOS
22ndndGen.Gen.DrMOSDrMOS
High Freq. &
Low Loss
Built-in SBD
WPAK(D)WPAK(D)
Compound
Smaller
POL-SiP (IC+Driver+MOS)
High-MOS
Low-MOS
Driver IC
ParasiticInductance (6x6(6x6
mm)mm)
JET+SBDJET+SBD
1st Gen. PKG 1st Gen. PKG 1st Gen. PKG 2nd Gen. PKG 2nd Gen. PKG 2nd Gen. PKG
LV P-MOS & DrMOS Road Map for SMPS
WPAK-DualWPAK-Dual
・ Low gate Charge
BEAM+SBD
HWSON3030
JET-MV(~100V)・ Logic gate Drive
Low Ron
Next MV
HWSON3044-D
22ndnd.Gen.GenHP-DrMOSHP-DrMOS
2ndGen.S-DrMOS
2ndGen.HV-DrMOS
Hi Voltage
2nd Gen.POL-SiP
Hi Performance
POL-Sip: Control IC & MOSFETs
3rd.Gen3rd.GenHP-DrMOSHP-DrMOS
{Under Study}
Post BEAM
NEXTWINFET
12th Gen.
NEXTWINFET
12th Gen.
Mini-HVSON( Cu-Clip)
MS-DrMOSMS-DrMOS
HVSON(Cu-Clip)
QFN56QFN56(8x8 mm)(8x8 mm)
WPAKWPAK LFPAK-iLFPAK-iLFPAKLFPAK
Low
Ron
Speed (30V)9th Gen.
Speed (30V)9th Gen.
Hi FOM
(Ron.Qg)
JET (30V)10th Gen.JET (30V)10th Gen.
BEAM (25-30V)11th Gen.
BEAM (25-30V)11th Gen.
WINFET(~25V)
12th Gen.
WINFET(~25V)
12th Gen.
D8-L (30-100V)
D8-L (30-100V)
2002 ~ 2004 | 2005 | 2006 | 2007 | 2008 | 2009 | 2010 | 2011 ~
Gate
Dra
in C
harg
e
Q
gd
[n
C]
10
Fairchild
1
0.31 10 20
TI/Ciclon
Next Gen.understudy
WINFET
RDS(on) [mΩ] @VGS=4.5V5
5
Hig
h pe
rfor
man
ce
Comparison of FOM* (FOM* Figure of Merit)
Lo side MOSFETHi side MOSFET
Low Ron.Qgd achieving low switching loss
Low Ron reducing conduction loss
RD
S(o
n)
typ
[m
Ω]
Vg
s =
4.5
V
200620042002
8th Gen.
2012
3.4mΩRJK0301DPB
9th Speed
2014
0.5
2.5
3.0
1.9mΩ
2.0
3.0mΩ
2008 2010
RJK0346DPA
RJK03C0DPA
10th JET
11th BEAM
1.7mΩ
1.0
1.5
3.5HAT2165H
Next Gen.
Under Study
30V Nch MOS30V Nch MOS30V Nch MOS30V Nch MOS
Application Examples
Intersil VRD11 Demo BoardThis dual processor board contains 24 LFPAK MOSFETs!
Murata Isolated POL ConverterHigh density board capable of handling high current for Telecom apps
Small Appliance Examples:Ultreo ultrasonic Toothbrush, Norelco Electric ShaverApple MacBook
Up to 16 FETs/system (depending on model) drive volumes tomillions of pieces per month!
Power MOSFET Process Technology
Continuous Process Development for Further InnovationContinuous Process Development for Further InnovationContinuous Process Development for Further InnovationContinuous Process Development for Further Innovation
‘04‘02 ’08
Normalized Die size (40V class / Nch)
1
0.8
0.6
UMOS (Trench)
Flagship Product4.3mohm40V, 88A
(FY)
UnderDevelopment
0.660.66
1.001.00
0.66
0.800.80
1.4mohm40V, 110A
Super Junction + UMOS
SJ2SJ20.25µm0.25µm
Cell Structure
Process Release
New New GenerationGeneration
LaboratoryResearch Level
’11~'12
Ron Reduction with Ron Reduction with UMOS/SJ combined processUMOS/SJ combined process
Ron Reduction with cell shrinkRon Reduction with cell shrink
'10
UMOS20.5µmRule
UMOS3
0.35µm
UMOS4
0.25µm
SJ10.35µm
Low Ciss(compare UMOS4:60%)
NEW
Industrial/AutomotivePMOS Package Roadmap
TO-220AB
Isolated TO-220
TO
-25
1 T
O-2
20
IS
OTO
-22
0
~200A
TO-263-7pin
+clip or ribbon bond
Bare dieHigh current, Low resistance
20062006 201220122010201020042004~~ 20022002
~180A~180A
TO-263-7pin500μmφ
Ad.TO-263
~110A~110A
400μmφ
TO-220SMD
~ 88A
TO-251
Ad.TO-252
~ 90A
TO-252
~ 60A8pin HSON
20082008 20092009
Small & Low Rth
Small
small &low heat generation
under planning
under development
Target – Power Tools
PMD use in Application Motor power switching/Battery pack protection
Renesas Product NP Series MOSFETs 2SK Series MOSFETs
Renesas Key Advantage NP devices have extended temperature range and built in gate ESD protection to
stand up to harsh use environments Increased gate resistance (Rg) reduces current spikes during switching to improve
reliability Extremely low DPM (0.03) (30 Defects per Billion)
Target – Power Tool
Key Opportunity Questions we will need to gather together for this type of opportunity
Business– Design Win decision process– Name of Decisions makers / Location– Decision timeline– Volume / Timeframe– MP location/ CM or ODM/Direct or Disti
Technical– Motor Voltage– Motor Amperage– DC or AC motor. If AC, switching frequency– Ambient Temperature Range– Battery voltage and capacity
Target – UPS
PMD use in Application Power conversion, Battery protection, Control
Renesas Product NP Series 55V MOSFETs
Renese Key Advantage Quality
Converter Inverter
Bypass
Battery
HFNoise
Example Application
Target – UPS
Key Opportunity Questions
Business– Design Win decision process– Name of Decisions makers / Location– Decision timeline– Volume / Timeframe– MP location/contact, CM or ODM, Direct/Disti
Technical– We need to learn talking to customer to understand designs
MOSFET: Guidance for Appropriate Part Identification
• Our “Sweet Spot” for LV is 30V
• Many opportunities can be covered with “JET” series
• High D-in success rate in US Market
• Use the Q&A from the RSSI Site “Rep Sales Guide”
• With our vast lineup of LV and MV MOSFETs, IGBTs, and Triacs, we have a “fit” for just about any application.
• For assistance, please contact the appropriate team member at HQ.
Target – Smart grid
PMD use in Application Meter Power Supply
NEC Product UPA2792 (Complementary N+P MOSFET) lower price version Detail spec by Fairchild $0.15 target price
NEC Key Advantage Quality Extended temperature range
Target – Smart Grid
Key Opportunity Questions we will need to gather together for this type of opportunity
Business– Design Win decision process– Name of Decisions makers / Location– Decision timeline– Volume / Timeframe– MP locations/CM or ODM/Direct or Disti
Technical– We need to learn talking to customers to get design information
MOSFET: Call to Action
Re-engage with DC-DC module accounts to present latest technology for Low and Middle Voltage FETs
Profile Power tool customers and introduce NP series products (Milwaukee Tool, DeWalts, and Black & Decker…)
Profile UPS customers and introduce NP series and IGBT(APC, Tripp Lite)
Profile Smartgrid customers and find out N/P complimentaryMOSFET usage (Itron, Landis & Gyr, GE Energy)
DrMOS
2004 2005 2006 2007 2008 2009 2010
MOSFET
IC
D8 (20V)
IP65 (16V)
Wire bonding, PB free
JET (30V)
IP75 (27V)
Clip bonding, Terminal Pb free, Halogen free
Notebook PCs V-core and non V-core
Server and desktop PCs non V-core (VTT, DDR, etc…)
Server and desktop PCs V-core
6x6 mm PKG
For VR12/IMVP7
1st Gen. PKG(Wire Bonding)
2nd Gen. PKG(Clip Bonding)
1st Gen. PKG(Wire Bonding)
8x8 mm PKG 2nd Gen. PKG
(Clip Bonding)
POL-SiP: Control IC and MOSFETsPOL-SiP: Control IC and MOSFETs
DrMOS: Driver IC and MOSFETsDrMOS: Driver IC and MOSFETs
POL all in one DevicePOL all in one Device
Package
Target Application
mass production Under study Developing
The World’s first DrMOS
in 2004
Higher Performance
Higher Performance
Light & Heavy LoadEfficiency up
8x8 mm PKG
Light & Heavy LoadEfficiency up
VCIN=12V
Intel Rev3.0/ High Voltage
Smaller Package Intel Rev3.0
6x6 mm PKG PWM=5V UP
Wide Input Range
BEAM (30V)
Technology
Products
R2J20601R2J20601R2J20604R2J20604
R2J20602R2J20602
R2J20651R2J20651
R2J20701R2J20701 R2J20755R2J20755R2J20702R2J20702
R2J2060xR2J2060x
R2J20751R2J20751
R2J20653AR2J20653A
R2J20605AR2J20605A
R2J20651AR2J20651AR2J20654R2J20654
R2J20652AR2J20652A
Renesas Integrated Power Device Roadmap
3-Chip in one packageDriver IC + Top MOS + Bottom MOS 50% smallerthan discrete solution Huge output current up to 40A (same as R2J20602NP) Pin compatible (DrMOS spec.)
FeaturesTarget Application Telecom/server Storage/graphic card Multi-Phase DC-DC converter
Functions Built-in SBD for boot-strapping Remote ON/OFF Capable of 5V PWM signal Thermal shut-down
QFN56QFN56 NEWNEWNEWNEW
Top MOSFET
8 x 8 x 0.8mmQFN 56pin
Drive
r
PW
M C
on
troller
(Mu
lti-ph
ase) D
river
Multi-Phase
Bottom MOSFETwith SBDwith SBD
Gate Driver
DrMOS (R2J20605ANP)
DrMOS: R2J20605ANP 8x8 Package
3-Chip in One Package
Features
Driver IC + Top MOS + Bottom MOS
Huge output current
50% smaller than discrete solution
up to 40A (same as R2J20602NP)Top MOSFET
8 x 8 x 0.8mmQFN 56pin
Target Application Telecom/Server
Storage/Graphic Card
Multi-Phase DC-DC converter
Remote ON/OFF
Built-in SBD for boot-strapping
Functions
Drive
r
PW
M
Co
ntro
ller(M
ulti-p
hase) D
river
Multi-Phase
Bottom MOSFET
with SBDwith SBD
Gate Driver
Pin Compatible (DrMOS spec.)
Capable of 5V PWM Signal
QFN56QFN56
NewNew
DrMOS: R2J20651NP/ANP 6x6 Package
6x6mm QFN-40pin = More Space SavingMore Space Saving
Area = 36 mm2
DrMOS 6x6
Area = 64 mm2
R2J20602NP 8x8
Space-saving
-- 4444%%
QFN-40pin 6x6mmQFN-56pin 8x8mm
6mm x 6mm
R2J20651NP
PWM Input
ThermalWarning
ThermalShutdown
Status
Sample MPNote
35AR2J20652ANP
16V
5V VCIN=12V version
27VR2J20653ANP Intel Rev3.0
Intel Rev3.0
R2J20651ANP
5V &3.3V
VinMax
IoutMax
Driversupply
5V
5V
130C
130C
115C 150C
NewNew
NewNew
5V,12V and 20V
QFN40QFN40
IGBT(Insulated Gate Bipolar Transistor)
IGBT: Definition
IGBT = Insulated Gate Bipolar Transistor Voltage controlled Bipolar Transistor
When to use MOSFET versus IGBT?
1 10 100 1000 Frequency (kHz)
IGBT ?? MOSFET
IGBT
MOSFET250V
1000V
Bre
akdo
wn
Vol
tage
Different IGBT’s for differen applications
Technology request Technology request from Applicationsfrom Applications
PDP TV setsPDP TV sets
Motor controlMotor control
IH IH Cook topsCook tops Thin chip and trench gate IGBTThin chip and trench gate IGBTIGBT and Diode chip in 1 PackageIGBT and Diode chip in 1 Package
Planar IGBTPlanar IGBT
IGBTs for Home AppliancesIGBTs for Home Appliances
PFC circuitsPFC circuits
High current andHigh current and High speed switchingHigh speed switching
Lower Power LossLower Power LossHigh reliabilityHigh reliability
High luminanceHigh luminanceLower Power lossLower Power loss
Ultra High speedUltra High speed swtchingswtching
Our DesignOur Design
Thin chip and trench gate IGBTThin chip and trench gate IGBTfor Low VCE(sat)for Low VCE(sat)
IGBT and Diode chip in 1 PackageIGBT and Diode chip in 1 Package
Thin chip and trench gate IGBTThin chip and trench gate IGBTwith High Short circuit capabilitywith High Short circuit capabilityIGBT and Fast Recovery Diode IGBT and Fast Recovery Diode
in 1 Packagein 1 Package
Required Characteristics of IGBT Required Characteristics of IGBT for Major Applications for Major Applications
◎◎ : high-priority characteristics◎ : Priority characteristics○ : Requisite characteristics- : Non-focused characteristics
Active filter(Partial SW)
Active filter(Continuation
SW)
Currentresonance
type
Voltageresonance
type
○ ○ ◎◎ ◎ ◎ ◎
toff ○ ◎◎ ◎ ○ ○ ○
ton ‐ ‐ ‐ ‐ ‐ ‐
‐ ○ ○ ‐ ○ ◎
‐ ‐ ‐ ‐ ○ ◎◎
600V 600V 600V 900-1200V 600-900V 600-800V
for partial SWHigh speed SW
typeLow VCE(sat)
typeHigh Voilage type
Low VCE(sat)type
Highbreakdown
resistance type
Inverter use(Motor
Control)
High-speedSW
FRD
IH cooking heaterApplicationsPFC
(1kW and over)
Characteristics
Saturation voltage(VCE(sat))
Brake down voltage
Recommended IGBT
Short Circuit capability
Solar PowerGeneration
(UPS)
Recommended IGBT’s for Specific ApplicationsRecommended IGBT’s for Specific Applications
RJH60C9DPD ★ ◎ ○RJH60D1DPP ★ ◎ ○RJH60D1DPE ★ ◎ ○RJH60D2DPP ★ ◎ ○RJH60D2DPE ★ ◎ ○RJH60D3DPP ★ ◎ ○RJH60D3DPE ★ ◎ ○RJH60D0DPK ★ ◎ ○ ◎RJH60D5DPK ★ ◎ ○ ◎RJH60D6DPK ★ ◎ ○ ◎RJH60D7DPK ★ ◎ ○ ◎RJP60D0DPK ★ ◎ ◎RJP60D0DPM ★ ◎ ◎
Low VCE(sat) RJP6006DPK ○RJP6085DPN ◎RJP6085DPK ◎
RJH6085BDPK ★ ◎RJH6086BDPK ★ ◎RJH6087BDPK ★ ◎RJH6088BDPK ★ ◎RJH60F3DPK ★ ◎ ◎ ○ ◎RJH60F0DPK ★ ◎ ◎ ○ ◎RJH60F4DPK ★ ◎ ◎ ○ ◎
RJH60F5DPK ★ ◎ ◎ ○ ◎
RJH60F6DPK ★ ◎ ◎ ○ ◎
RJH60F7ADPK ★ ◎ ◎ ○ ◎RJH1BF7RDPK ★ ◎RJH1CF5RDPK ★ ◎RJH1CF6RDPK ★ ◎RJH1CF7RDPK ★ ◎
High speed SW andLow VCE(sat)
(Built in Diode)
High Voltage(Built in Diode)
IH Cook tops
ApplicationFeatures
ChopperInverter
(Full Bride)
Solar PowerGeneration,
UPS
SMPS,PFC
(1kW above)Motor Control
CurrentResonance
Inverter(Full Bride)
High destructionCapability
Very High Speed SWtype
Very High Speed SWtype
(Built in Diode)
VoltageResonance
Active filter(Partial SW)
Active filter(Full SW)
High destructionCapability
(Built in Diode)
IGBT: Development Roadmap
2005 2006 2007 2008 2009 2011
G4
Hig
h p
erfo
rma
nce
& H
igh
effi
cien
cy
2012
30V
11th Gen.Next-Gen600V/1200V
G5600V
VGE=30VG5H
600V/1200V
Planar construction
Trench technology
Trench technology
High speedG4S
600V
G6HVGE=30V
2010
High Speed &Low Vce (sat) Type : RJH60FXX Series
High Short Circuit Capability Type :RJH60DXX Series
Optimum Design for Specific Applications
Optimum design of cell structure.
Thin wafer
1,100-1,200VG6H-RC
Reverse conducting
Trench technology
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2 2.5 3
IGBT: New G6H Series vs G5 Series
Co
llect
or
curr
en
t I C
[A]
RJH60F5DPK(80A/600V)
(G6H series)
Tc = 25 ℃VGE = 15 V
GN6060V5DP(60A/600V) (G5 series)
Improvement 30%
600V
Collector to Emitter saturation voltage VCE(sat) [V]
IGBT: Renesas vs The Competition
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0 200 400 600 800 1000 1200 1400 1600 1800Turn-off Loss Eoff(μJ)
VC
E(s
at)
(V)
RenesasG5 Process Perfomance
R 4068D
T 60J323
FC 20N60
I 50N60
(Inductive load,Tc=125℃,IC=40A,VCC=300V,VGE=15V,RG=5ohm)
G6H series
Company A
Company B
Company C
Company D
600V
IGBT: Application details necessary for part selection
Applications Induction Heating, i.e Cooktop
– What type of circuit? Current resonant or voltage resonant?– What is the load capacity (kW)?– What is the operating current?– What is the switching frequency?– What package is required?– What is the competitive parts and price (from customer)?
Others– What is the AC input voltage?– What is the load capacity (kW)?– What is the operating current?– What is the switching frequency?– Is a Fast Recovery Diode (FRD) required?– Is short circuit capability required?– What package is required?
Triac and Thyristor
Triac and Thyristor: Definitions and Facts
What is a Thyristor? A switching device that allows for unidirectional current flow Generally more expensive than Triacs; more robust Act as a “Circuit Breaker” in Power Supplies for Digital Circuits
– Inrush Current Protection for Various Applications Also suitable for use in Ignition Modules, though not Automotive
What is a Triac? A bi-directional electronic switch which can conduct current in
either direction when triggered Essentially two Thyristors combined in a single package Used in AC circuits because it allows for large power flows with
milliampere scale control currents Best for applications that require precise control of current flow
– Light Dimmer– Electric Fan– Variable Speed Power Tools– Heating Elements for various applications
Triac and Thyristor: Market Position, Relative Strengths
2009 Worldwide Market Share – Triac and Thyristor– ST Micro 24%– NXP 21%– Renesas 16%– On Semi 11%– Others
Renesas has highest market share for Triac in Japan Goal is to grow position in other markets, such as US ST Micro has an estimated 95% share in US
Huge product lineup, but weakness in reliability Currently having serious delivery issues Increasing production capacity for TO-220FL package to
capitalize on current situation Max junction temp 150degC, most others are at 125degC
Higher temp margin means our parts can reliably operate in more harsh environments
Diverse product lineup covering a wide array of applications Price-competitive, success in China Market
Triac and Thyristor: Major Customers by Application
Home Appliance Toshiba (Japan) Panasonic (Japan) LG (Korea) Samsung (Korea) Haier (China) Midea (China)
OA Equipment Canon (Japan) Fuji Xerox (Japan) LG (Korea)
Circuit Breaker Panasonic Mitsubishi Schneider
Inverter Lamp Mitsubishi Panasonic
Home Appliance GE Sensata Electrolux Whirlpool Mabe Emerson
Power Tool Black and Decker Milwaukee Electric Tool
Other Rockwell Toro (sprinkler systems) JCI (Home Automation) NCR GE Lighting
CURRENT BUSINESS - Worldwide TARGET BUSINESS - Americas
Triac and Thyristor: Applications
電動工具
Lamp
TriacsControl rectifier
Washing machine
Rice cooker
Toilet seat
Vacuum Cleaner
Camera (strobe)
Leakage detector
Control capacitor(LC resonance)
Heater MotorSolenoidValve
AC Control
Others
Printer, Copier FAX
LampDimmer
SSR
SMPS(Inrush current
Protection)
Inverter Lamp (Inrush current
Protection)
Fan heater(Ignitor)
Boat Jet ski ( Ignitor )
Bike Regulator )
Automatic Dish washer
Electric tool
Thyristors
Electric Fan
Washing MachineDryerElectric FanHair DryerDehumidifierVacuum CleanerRefrigeratorDishwasherRice CookerBlenderBread-baking MachineElectric PotVentilation FanToilet Seat
Renesas Triac & Thyristor is used in various applications as listed below. The blue bold text shows the applications where Renesas Triac & Thyristor is especially strong.
Gas RangeWater heater (boiler)Fan HeaterSmall engine (ex. Lawn mower)
Inverter LampLight Dimmer
SMPSMotor controlElectric toolCircuit Breaker (Leakage detector)
SSRStrobe (Camera)Regulator for motor bikeOthers
PrinterCopier
Home ApplianceHome Appliance
OA equipmentOA equipment IndustryIndustry
Igniter ApplicationIgniter Application
OtherOther
LightingLighting
Triac and Thyristor: Applications
Triac and Thyristor: Roadmap
‘02‘00
PlanarPlanar LB seriesLB series
600V600V(Tj=150 )℃(Tj=150 )℃
GeneralGeneral
PlanarPlanar LA seriesLA series600600 ~~ 1000V1000V(Tj=125 )℃(Tj=125 )℃
GeneralGeneral
PlanarPlanar LG seriesLG series600V600V ~~ 800V800V
(Tj=150 )℃(Tj=150 )℃
GeneralGeneral
PlanarPlanarHigh PowerHigh Power
400V400V ~~ 1500V1500V ~~ 30A30A(Tj=125/150 )℃(Tj=125/150 )℃
GeneralGeneral
PlanarPlanarLD seriesLD series
600V600V ~~ 700V700V(Tj=150 )℃(Tj=150 )℃
Low InrushLow Inrush
PlanarPlanar AA l l Ribbon Ribbon
600V600V ~~ 700V700V(Tj=150 )℃(Tj=150 )℃
GeneralGeneral
For low inrush current
High Voltage
/ High
Temperature
‘04 ‘06 ‘08 ‘10
High
Power
New type
Glass Glass Passivation Passivation (Tj=125 )℃(Tj=125 )℃
GeneralGeneral
High
Commutation
Planar Planar technologytechnology
(Tj=125 )℃(Tj=125 )℃
GeneralGeneral
High reliabilityguarantee 150℃
Triac
Thyristor
PlanarPlanar44 ~~ 16A16A
800V800V(Tj=150 )℃(Tj=150 )℃
High Commutation
High Commutation
Under Development
Planar Planar technologytechnology
(Tj=150 )℃(Tj=150 )℃
GeneralGeneral
guarantee 150℃
Under Development
PlanarPlanar600V600V ~~ 700V700V
~~ 20A20A(Tj=150 )℃(Tj=150 )℃
General &Low Inrush
General &Low Inrush
New package
TO-220FL
High commutation Triac
TO-220 package Triac,
=> TO-220FL
=> LG series (TO-220F)=> TO-220, TO-220S, TO-220F(2), TO-220FN
Small power & compact Triac
=> TO- 92, UPAK, DPAK(L)-(3), MP- 3A
If you need higher voltage and current => High Power Triac
If your system requires repetitive inrush current capability => Triac with AL ribbon
If your system doesn’t need high inrush current capability => LC/LD series
If you need more thermal margin or to use in hot environment
=> 150 Thyristor℃
110 , 125 Thyristor ℃ ℃
Including New Product
New Product s
New Product
New Product s
Triac and Thyristor: Products
Triac and Thyristor: Application details necessaryfor part selection
Application and Electrical Spec questions1. What kind of load is the Triac or Thyristor driving? Motor,
heater, or solenoid?2. What is the voltage of the AC line?3. What is the Operating Current?4. What is the inrush current? (if inductive load, as with a motor)5. What are the competitive parts and pricing (from customer)?
Package Questions1. Surface Mount or Lead Type?2. If Lead Type, is requirement for an Insulated or non-Insulated
package?
Triac/Thyristor: Call to Action
Take advantage of all cross opportunities Convert open opportunities to D-wins at identified Target
Accounts Identify potential new accounts from current MCU customer
pool Suggest caravan stops for Japan Engineering visit Contact Tak Taoyama (Sales) and Mark De Freitas (Marketing)
with any questions/requests, new opportunity information
Diode
Diode: W/W Market Share and Product Breakdown
Diode: Product Lineup by Device Type
Switching (SW)
Zener (ZN)
Schottky (SB)
Varicap (VC)
Band SW (BSW)
PIN (PIN)
Small signal rectification
Constant voltageESD protection
DetectorCurrent Stopper
TV tuner, AFC, VCO
RF SW Diode
ANT-SW
GeneralPurpose
Small signal
PW
PW(over Io=0.5A)
HighFrequency
Small signal (under Io=0.5A)
Rectifier Current Stopper
ESD protection
Diode: Mobile Application Block Diagram
BasabandSignal
processing
VoiceProcessing
Memory
External I/O
AC ChargerAC Adopter
PowerManagementPower Supply
TV/FM Tuner Unit
DisplayLC
D
Driv
er
DuplexerAnt-SW
MicroComputer
MicroComputer
USB2.0Terminal
Keyboard1 2 34 5 67 8 9
TX Stage
RXVCO
TXVCO
PLL
RX stage
RF IC
Detector
Tuning
TuningRF SW
RF Detector
DCInput
BatteryPower management SW
H.P.A
LNA
ANT-SWPIN Diodes for SPDT,DPDTMP6:RKP200,204KPMFP12:RKP411KSMP6-8,MP6-12
Tunable AntennaVariCap Diodes for tunable antenna
RKV652KL, 653KLRKV654KL, 655KL
Rectifier diodes of Connection Terminal Schottky Diodes
Back Current StopperFor BatterySchottky Diodesfor Circuit Protection
Protection for external signal lineZener Diodes for ESD surge Absorption
RKZ7.5TKL/KPRKZ6.8Z4KTRKZ***KL/KP series
Protection for LCD driversSchottky Diodesfor Latch-Up Phenomena
HSL226, HRL0103CRKD703K*, RKD704KP
SMPS : Switch-Mode Power Supply
HRC0203C, RKD703K*
Diode: Sawn Wafer (Die) for Surge Absorption - LED apps
High-intensity white/blue/green LED using a sapphire substrate
are low ESD surge level
# Set makers using LED lamp adopt a package enclosing product for external.# LED lamp makers built an bare chip in LED package
Some high-intensity LED chips are low surge level. Therefore they can have a problem for high reliability use
Problem in high-intensity LED
Zener diode absorb inrushing ESD surge from outside, and protect the destruction of LED chips
Solution
(Vz 6.0~8.0V)
ZN
LED
ZN
LED
LED protection zener
(Vz 8.0~12V)
LED
Bidirectional zener(Vz 6.0~9.0V)
XLamp® LEDsModel : XREWHT-L1-0000-00C02 Zener Diode chip Zener Diode chip V z- Iz characteristiccharacteristic
1.E-12
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
0 2 4 6 8
Vz[V]
Iz[A
]
VF
VR
1.E-12
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
0 2 4 6 8 10
Vz(V)
IA
)z(
Renesas RKZ7.5TWMW0 V z- Iz Characteristics
Comparison of Bidirectional Zener DiodeComparison of Bidirectional Zener Diode
Diode: Call to Action
Include Diode for Mobile Apps target customers, such as RIM, Apple, Motorola
Add LED protection business for major manufacturers such as Cree
Sales Resources
Discrete, Power, & Standard Product Offline & Online AE and Sales Resources
am.renesas.com:1) eCommerce Tree is enabled for low voltage MOSFETs
• This includes purchasing (through Digikey) and Sampling function• We will activate for at least IGBT and Triac as well.
2) Virtual Power Lab “Renesas VP”• Buck converter design tool including auto FET selection, Spice Models, Dynamic Data sheets.
3) Status List by Product Line – Comprehensive parts list for Transistor (MOSFET, IGBT, Triac) and Diode.
4) Discrete Products Catalog. 5) Customer Presentations are available online for each product family.6) Parametric search7) Cross reference tool
RSSI1) Sales Training Presentations for each product category.
www.renesas.com: (global site)1) Many application examples showing standard product usage with MCU’s. Example: Inverter
Discrete, Power, & Standard Product Offline & Online AE and Sales Resources
OFFLINE:1) Santa Clara Sample Warehouse for Low Voltage MOSFET (Contact: [email protected])2) “JIMSIM” Advanced Buck Converter Simulation Tool (Contact: [email protected])
• Jim can rapidly and accurately compare FETs from various competitors under a wide range of operating conditions
3) Version 1 EZ-Like pdf for promotion products• Available now for Low Voltage MOSFET.• Coming soon for MV MOSFET, IGBT, and Triac.• Low volume pricing still under analysis to make compete these upcoming EZ lists.
OTHER: OTHER: Tak Taoyama ([email protected]) is managing the N. American Sales Promotions for Triacs,
Thyristors, and IGBTs.
An Apps Engineer from Renesas High Power team in Takasaki Japan will visit us in late July or August for a promotional caravan, if you have potential Triac or IGBT opportunities please contact Tak to get on the caravan schedule.
Marketing to productize DigiKey for samples and small orders.
Upcoming Training via WebEx.1. Power MOSFET Basics Aug-Sep2. Renesas VP and “JimSim” Simulation Tools Sep3. Sales Tools Update Sep-Oct
Appendix
MOSFET Promotion Products
MOSFET: Low Voltage BEAM Series
MOSFET: Low Voltage BEAM Series
MOSFET: Low Voltage JET Series
MOSFET: Low Voltage JET Series
MOSFET: Low Voltage JET Dual + BEAM 3x3
MOSFET: Medium Voltage JET and D8 Series
ID(DC)
Type N:Nch P:Pch
VDSS
Package code C: TO-220 (MP-25) D: TO-262 (MP-25-S) E: TO-263 (MP-25ZJ) H: TO-251 (MP-3) K: TO-263 (MP-25ZK) N: TO-262 (MP-25SK) M: TO-220 (MP-25K) P: TO-263 (MP-25ZP) S: TO-252 (MP-3ZK) T: TO-263-7pin (MP-25ZT) V: TO-252 (MP-3ZP) Y: 8pin HSON Z: Bare die
Process E: UMOS 2 F: UMOS 3 G: UMOS 4 J: UMOS SJ1
Gate driving L: Logic level, Protection diode built in H: Non-logic, Protection diode built in D: Logic level, Protection diode less U: Non-logic level, Protection diode less
NP 180 N 04 T U G
NP series product naming
NEC Power
Super Junction 1 Series
Realize W/W Top class RRealize W/W Top class RDS(on)DS(on) xQ xQ gg Lower Drive powerLower Drive power
Much faster switchingMuch faster switching
Target applicationTarget applicationHigh power ECU, such as EPS, ISGHigh power ECU, such as EPS, ISG
RDS(on) x Qg improved 42% RDS(on) x Qg improved 42%
4 products released & 5 products under development4 products released & 5 products under development
(mo
hm・n
C) 468468
1.8m1.8mΩΩ150nC150nC
1.8m1.8mΩΩ260nC260nC
270270
(NECEL)(NECEL)SJSJ11
NP110N04PUJNP110N04PUJ
(NECEL)(NECEL)UMOS4UMOS4
NP110N04PUGNP110N04PUG
2.0m2.0mΩΩ160nC160nC
320320
((CompetitorCompetitor))
-42%-16%
P/N VDSS VGSS ID(DC)Ron(max)@VGS=10V
Qg Package/Status
NP110N04PUJ 40V 20V 110A 1. 8mohm 150nC
TO-263
In production
NP110N055PUJ 55V 20V 110A 2. 4mohm 150nC
NP109N04PUJ 40V 20V 110A 2. 3mohm 115nC
NP109N055PUJ 55V 20V 110A 3. 2mohm 115nC
NP180N04TUJ * 40V 20V 180A 1. 5mohm 150nC
TO-263-7pin
DS: OK MP: July/'10
NP180N055TUJ * 55V 20V 180A 2. 3mohm 150nC
NP160N04TUJ * 40V 20V 160A 2. 0mohm 115nC
NP160N055TUJ * 55V 20V 160A 3. 0mohm 115nC
NP100N04NUJ * 40V 20V 100A 3. 0mohm 107nCTO-262
DS: June/'10 MP: Sep/'10
*Under development
(RENESAS)SJ1
(RENESAS)UMOS4
Next Gen. Super Junction 2 Series
RonQg was reduced by 45% compared with UMOS4RRononQQgg was reduced by was reduced by 4545% % compared with UMOS4compared with UMOS4(m
ohm・n
C) 312312
1.2m1.2mΩΩ150nC150nC
1.2m1.2mΩΩ260nC260nC
180
SJSJ11UMOS4UMOS4
0.9m0.9mΩΩ190nC190nC
171
SJ2SJ2
-42%-45%
TO-263-7pin(40V) Comparison
Ron dedicated Process
Ron dedicated Process
Industry leading level RIndustry leading level RDS(on)DS(on) xQ xQ gg Performance Performance
Reduction of On LossReduction of On Loss
Reduction of Gate Drive Power and Switching Loss by Faster SwitchingReduction of Gate Drive Power and Switching Loss by Faster Switching Suitable for High Current Drive Application such as EPS, ISGSuitable for High Current Drive Application such as EPS, ISG
Product name
(Development code)Package VDSS ID(DC)
PT
(Tc=25 )℃Ron(max)
@VGS=10VQG Ciss
NP160N04TU_*
(VA0072TU04)TO-263-7p 40V 160A 250W 1.8mohm 120nC 8300pF
NP***N04PU_*
(VA0072PU04)TO-263 40V 110A 250W 2.0mohm 120nC 8300pF
NP100N04PU_*
(VA0071PU04)TO-263 40V 100A 176W 2.7mohm 80nC 5000pF
DS : Sep 2010 ES : Nov 2010 CS : March 2011
TO-252 High ID-rating Series
P/N VDSS VGSS ID(DC) RDS(on)@VGS=10V
Ciss
NP90N03VUG/VHG*/VLG* 30V 20V 90A 3.2mohm 5000pF
NP90N04VUG/VDG/VLG 40V 20V 90A 4.0mohm 5000pF
NP90N055VUG/VDG 55V 20V 90A 6.0mohm 5000pF
NP90N06VLG 60V 20V 90A 7.8mohm 5000pF
7 products of High ID-rating Series released !7 products of High ID-rating Series released ! Realize ID=90A rated in TO-252 Realize ID=90A rated in TO-252 Enable to reduce the sizeEnable to reduce the size Target applicationTarget application
EPS, Wiper, Slide Door, Transmission EPS, Wiper, Slide Door, Transmission
ID=90AID=90A (( MAX.)MAX.)SizeSize :: 64mm64mm22
ID=88A(MAX.)ID=88A(MAX.)SizeSize ::153mm153mm22
TO263 Ad.TO252Ad.TO252
Reduced Reduced 60%60%
Application example :H-Bridge Motor driver
Vbb=12V(TYP.)
MPU Pre-driver MMPU Pre-driver M
High current capability by 400um Al wire * 3pcs
*Under development DS: done, MP:July/'10
New
8pin HSON Series
New package enables to reduce the sizeNew package enables to reduce the size
31mm31mm22
Conventional PKGConventional PKGTO-252TO-252
Conventional PKGConventional PKGTO-252TO-252
New PKGNew PKG8pin HSON8pin HSON
New PKGNew PKG8pin HSON8pin HSON
Reduced Reduced 51%51%
64mm64mm22
ElectricalThrottle
O2 heater
InjectorSW
controllerDC/DCCONVERTER
Injector drive
InjectorSW
controllerDC/DCCONVERTER
Injector drive
Application example ( EMS)
P/N
NP23N06
YDG
NP33N06
YDG
NP35N04
YUG
NP35N04
YLG*
NP74N04
YUG
NP75N04
YUG
NP50P03
YDG
NP75P03
YDG
NP75P04
YLG*
Type Nch(U4) Nch(U4) Nch(U4) Nch(U4) Nch(U4) Nch(U4) Pch(U4) Pch(U4) Pch(U4)
Gate drive Logic Logic non LogicLogic +GS diode
non Logic non Logic Logic LogicLogic +
GS diode
VDDS 60V 60V 40V 40V 40V 40V -30V -30V -40V
ID(DC) 23A 33A 35A 35A 75A 75A -50A -75A -75A
Ronmax@10V
27mΩ 14mΩ 10mΩ 9.5mΩ 6mΩ 5.1mΩ 9mΩ 6.2mΩ 10.7mΩ
Ciss typ 1250pF 2600pF 1900pF 1900pF 3500pF 4300pF 2100pF 3100pF 3200pF
*Under development DS: done, MP:July/'10
100V NP Series Under development
P/N Package VDSS VGSS ID(DC) RDS(on)@VGS=10V
Ciss Status
NP70N10KUF TO-263 100V 20V 70A 20mohm 2500pF MP
NP28N10SDE TO-252 100V 20V 28A 33mohm 3500pF July/'10
NP36N10SDE TO-252 100V 20V 36A 52mohm 2200pF July/'10
Increasing 100V PoMOSFET line-upIncreasing 100V PoMOSFET line-up Realize VDSS=100V rated in TO-252 Realize VDSS=100V rated in TO-252 Target applicationTarget application
Direct Injection, LED controlDirect Injection, LED control
MicroProcessor
Voltage regulator
12V(TYP)
Controller Injector driver
Electrical Throttle
O2 sensor
Boost Converter
NP70N10,NP36N10
NP36N10,NP28N10
NP55N055NP52N06
R
LEDmodule
L
LEDcontroller
12V( typ)
BoostConverter
NP36N10,NP28N10Application example (Engine control) Application example (LED)
Rds(ON) 30V 40V 55V 60V
~20mΩ NP52N055SUG(14m) NP52N06SLG(19m)
~10mΩNP55N055SUG(10m)NP55N055SDG(9.5m)NP60N055KUG(9.4m)
~7mΩ
NP55N04SUG(6.5m)NP60N04MUG(6.3m)NP60N04KUG(6.1m)NP70N04MUG(5.0m)
NP82N055PUG(5.2m)NP90N055VUG(6.0m)
NP82N06PDG(6.7m)NP82N06PLG(6.7m)
~5mΩ
NP90N03VUG(3.2m)NP60N03SUG(3.8m)NP60N03KUG(4.8m)NP55N03SUG(4.9m)
NP90N04VUG(4.0m)NP82N04PUG(3.5m)NP82N04PDG(3.5m)NP88N04NUG(3.4m)
NP88N055KUG(3.9m)
~3mΩNP82N03PUG(2.8m)NP88N03KUG(2.4m)NP88N03KDG(2.4m)
NP90N04MUG(3.0m)NP88N04KUG(2.8m)NP109N04PUG(2.3m)
NP110N055PUG(2.8m)
~2mΩ NP110N03PUG(1.5m)
NP160N04TUG(2m)NP160N04TDG(2m)
NP110N04PUG(1.8m)NP110N04PDG(1.8m)NP161N04TUG(1.8m)NP180N04TUG(1.5m)NEW
NEW
NEW NEWNEW
NP series PoMOSFET (UMOS4,Nch)
VDSS(V)
G to SDi
TO-220(MP-25K)
TO-262(MP-25SK)
TO-263(MP-25ZP)
TO-252(MP-3ZP)
40V
built in
NP80N04MLG (4.8m)
NP82N04MLG (4.2m)
NP80N04NLG (4.8m)
NP82N04NLG (4.2m)
NP80N04PLG (4.5m)NP90N04VLG
(4.0m)
nothing
NP80N04MDG (4.8m)
NP82N04MDG (4.2m)
NP82N04MUG (4.2m)
NP80N04NUG (4.8m)
NP80N04NDG (4.8m)
NP82N04NUG (4.2m)
NP82N04NDG (4.2m)
NP80N04PUG (4.5m)
NP80N04PDG (4.5m)
NP90N04VDG (4.0m)
55V
built in - - - -
nothing
NP80N055MDG (7.3m)
NP82N055MUG (6.0m)
NP80N055NDG (7.3m)
NP82N055NUG (6.0m)
NP80N055PDG (7.0m)
NP90N055VDG (6.0m)
60Vbuilt in
NP80N06MLG (10m)NP82N06MLG
(7.4m)
NP80N06NLG (10m)NP82N06NLG
(7.4m)NP80N06PLG (9.7m)
NP90N06VLG (7.8m)
nothing - - - -
RonMax(VGS=10V)
NP series PoMOSFET (UMOS4,Nch)
RDS(on) 40V(TO-252) 40V(TO-263) 60V(TO-252) 60V(TO-263)
~100mΩ NP15P06SLG(75m)
~50mΩ NP15P04SLG(40m) NP20P06SLG(48m)
~30mΩ NP20P04SLG(25m) NP36P04KDG(17m) NP36P06SLG(30m) NP36P06KDG(29.5m)
NP36P04SDG(17m) NP50P06SDG(16.5m) NP50P06KDG(17m)
NP50P04SDG(9.6m)
~10mΩ NP50P04KDG(10m) NP83P06PDG(8.8m)
NP82P04PLF(8m)
~7mΩ NP83P04PDG(5.3m) NP100P06PLG(6m)
NP100P06PDG(6m)
~5mΩ NP100P04PLG(3.7m)
NP100P04PDG(3.5m)
NP series PoMOSFET (UMOS4,Pch)
NP Series UMOS4, Nch TO-263 (1/2)
Surface Mount Type (TO-263) Nch UMOS4
Part no. PackageVDSS
[V]ID(DC)
[A]PT[W]
RDS(on)[mΩ]
VGS=10V*VGS=4.5V**VGS=5.0V
Ciss[pF]
Qg[nC] Status
NP110N03PUG adv TO-263 110 288 1.5 16400 253 MP
NP88N03KUG TO-263 88 200 2.4 9600 165 MP
NP88N03KDG TO-263 88 200 2.4 / 3.9* 9000 165 MP
NP82N03PUG adv TO-263 82 143 2.8 6050 106 MP
NP60N03KUG TO-263 60 88 4.8 3500 62 MP
NP180N04TUG TO-263-7pin 180 288 1.5 16300 252 MP
NP161N04TUG TO-263-7pin 160 250 1.8 13500 230 MP
NP110N04PUG adv TO-263 110 288 1.8 17100 260 MP
NP110N04PDG adv TO-263 110 288 1.8 / 3.2* 14500 230 MP
NP109N04PUG adv TO-263 110 220 2.3 10500 180 MP
NP160N04TDG TO-263-7pin 160 220 2 / 5.4* 10500 180 MP
NP160N04TUG TO-263-7pin 160 220 2 10500 178 MP
NP88N04KUG TO-263 88 200 2.9 10000 165 MP
NP82N04PUG adv TO-263 82 143 3.5 6500 106 MP
NP82N04PDG adv TO-263 82 143 3.5 / 8.0* 6000 100 MP
NP80N04PDG adv TO-263 80 115 4.5 / 8.7* 4900 90 MP
NP80N04PUG adv TO-263 80 115 4.5 4900 90 MP
NP80N04PLG adv TO-263 80 115 4.5 / 8.7* 4900 90 MP
NP60N04KUG TO-263 60 88 6.1 3400 63 MP
30
40
NEW
NEW
NP Series UMOS4, Nch TO-263 (2/2)
Surface Mount Type (TO-263) Nch UMOS4
Part no. PackageVDSS
[V]ID(DC)
[A]PT[W]
RDS(on)[mΩ]
VGS=10V*VGS=4.5V**VGS=5.0V
Ciss[pF]
Qg[nC] Status
NP110N055PUG adv TO-263 110 288 2.4 17100 251 MP
NP88N055KUG TO-263 88 200 3.9 9600 166 MP
NP82N055PUG adv TO-263 82 143 5.2 6400 106 MP
NP80N055PDG adv TO-263 80 115 7 / 10.9 4900 93 MP
NP60N055KUG TO-263 60 88 9.4 3700 61 MPNP82N06PDG adv TO-263 82 143 6.7 / 8.5** 5700 106 MPNP82N06PLG adv TO-263 82 143 6.7 / 8.5** 5700 106 MPNP80N06PLG adv TO-263 80 115 9.7 / 13 5000 95 MP
60
NEW
NEW
Through Hole Type (TO-220/262) Nch UMOS4
Part no. Package VDSS[V] ID(DC[A] PT[W]
RDS(on)[mΩ]
VGS=10V*VGS=4.5V**VGS=5.0V Ciss[pF] Qg Status
NP90N04MUG TO-220 90 217 3.0 11200 182 MP
NP88N04NUG TO-262 88 200 3.4 9510 171 MP
NP82N04MUG TO-220 82 143 4.2 6500 106 MP
NP82N04MDG TO-220 82 143 4.2 / 8.5* 6000 100 MP
NP82N04MLG TO-220 82 143 4.2 / 8.5* 6000 100 MP
NP82N04NUG TO-262 82 143 4.2 6500 106 MP
NP82N04NDG TO-262 82 143 4.2 / 8.5* 6000 100 MP
NP82N04NLG TO-262 82 143 4.2 / 8.5* 6000 100 MP
NP80N04MDG TO-220 80 115 4.8 / 9.0* 4900 90 MP
NP80N04MLG TO-220 80 115 4.8 / 9.0* 4900 90 MP
NP80N04NUG TO-262 80 115 4.8 4900 90 MP
NP80N04NDG TO-262 80 115 4.8 / 9.0* 4900 90 MP
NP80N04NLG TO-262 80 115 4.8 / 9.0* 4900 90 MP
NP70N04MUG TO-220 70 115 5.0 4900 90 MP
NP60N04MUG TO-220 60 88 6.3 3200 60 MP
40
NEW
NP Series UMOS4, Nch TO-220/262 (1/2)
NP Series UMOS4, Nch TO-220/262 (2/2)
Through Hole Type (TO-220/262) Nch UMOS4
Part no. Package VDSS[V] ID(DC[A] PT[W]
RDS(on)[mΩ]
VGS=10V*VGS=4.5V**VGS=5.0V Ciss[pF] Qg Status
NP82N055MUG TO-220 82 143 6.0 6400 105 MP
NP82N055NUG TO-262 82 143 6.0 6400 105 MP
NP80N055MDG TO-220 80 115 7.3 / 11.2* 4900 93 MP
NP80N055NDG TO-262 80 115 7.3 / 11.2* 4900 93 MP
NP82N06MLG TO-220 82 143 7.4 / 9.7* 5700 106 MP
NP82N06NLG TO-262 82 143 7.4 / 9.7* 5700 106 MP
NP80N06MLG TO-220 80 115 10 / 13* 5000 95 MP
NP80N06NLG TO-262 80 115 10 / 13* 5000 95 MP
55
60
NEW
Surface Mount Type(TO-252) Nch UMOS4
Part no. Package VDSS[V] ID(DC[A] PT[W]
RDS(on)[mΩ]
VGS=10V*VGS=4.5V Ciss[pF] Qg Status
NP90N03VUG Ad.TO-252 90 105 3.2 5000 90 MP
NP60N03SUG TO-252 60 105 3.8 5000 90 MP
NP55N03SUG TO-252 55 77 5 3500 62 MP
NP90N04VUG Ad.TO-252 90 105 4 5000 90 MP
NP90N04VDG Ad.TO-252 90 105 4 / 8.6* 4900 90 MP
NP90N04VLG Ad.TO-252 90 105 4 / 8.6* 4900 90 MP
NP55N04SUG TO-252 55 77 6.5 3400 63 MP
NP90N055VUG Ad.TO-252 90 105 6 5000 90 MP
NP90N055VDG Ad.TO-252 90 105 6 / 10.5* 4900 90 MP
NP55N055SUG TO-252 55 77 10 3500 60 MP
NP55N055SDG TO-252 55 77 9.5 / 12* 3200 64 MP
NP52N055SUG TO-252 52 56 14 2100 38 MP
NP90N06VLG TO-252 90 105 7.8 / 12.5* 5000 95 MP
NP52N06SLG TO-252 52 56 17.5 / 25* 2100 39 MP
55
30
40
60
NEW
NEW
NEW
NEW
NP Series UMOS4, Nch TO-252
Part no. Process Package VDSS[V] ID(DC[A] PT[W]
RDS(on)[mΩ]VGS=10V
*VGS=4.5VCiss[pF]VDS=25V Qg[nC] Status
NP100P04PLG -100 200 3.7/5.1* 15100 320 MP
NP100P04PDG -100 200 3.5/5.1* 15100 320 MP
NP83P04PDG -83 150 5.3/8* 9820 200 MP
NP50P04KDG -50 90 10/15* 5100 100 MP
NP36P04KDG -36 56 17/23.5* 2800 55 MP
NP100P06PLG -100 200 6/7.8* 15000 300 MP
NP100P06PDG -100 200 6/7.8* 15000 300 MP
NP83P06PDG -83 150 8.8/12* 10100 190 MP
NP50P06KDG -50 90 17/23* 5000 95 MP
NP36P06KDG -36 56 29.5/37.5* 3100 54 MP
UMOS4
adv TO-263
-60
-40
adv TO-263
TO-263
TO-263
Surface Mount Type (TO-263) Pch UMOS4
NP Series UMOS4, Pch TO-263
Surface Mount Type (TO-252) Pch UMOS4
Part no. Process Package VDSS[V] ID(DC[A] PT[W]
RDS(on)[mΩ]VGS=10V
*VGS=4.5VCiss[pF]VDS=25V Qg[nC] Status
NP36P06SLG -60 -36 56 30/40* 3200 52 MP
NP50P04SDG -50 84 9.6/15* 5100 100 MP
NP36P04SDG -36 56 17/23.5* 2800 55 MP
NP20P04SLG -20 38 25/38* 1650 34 MP
NP15P04SLG -15 30 40/60* 1100 23 MP
NP50P06SDG -50 84 16.5/23* 5000 100 MP
NP20P06SLG -20 38 48/64* 1650 34 MP
NP15P06SLG -15 30 70/95* 1100 23 MP
UMOS4 TO-252
-40
-60
NP Series UMOS4, Pch TO-252
IGBT Promotion Products
IGBT: Features and Applications by Product Type
G6H Ultra Low VCE(sat) Series 600V IGBT Features
– Ultra Low Collector to Emitter Saturation Voltage– Built-in Fast Recovery Diode (FRD) in Single Package– High-Speed Switching
Applications– Induction Heating (IH) Cooktop– Current Resonance, Half Bridge– Soft Switching Applications
New Products
3Q/’10OKTO-3PYES300V30A95ns15V45A1.35V45A85A600VRJH60F6DPK
OKOKTO-3PYES300V30A80ns15V30A1.40V30A60A600VRJH60F4DPK
Tc=100℃Tc=25℃
25A
40A
50A
MPWS
OK
OK
OK
Status
OKTO-3PYES300V30A95ns15V50A1.35V90A600VRJH60F7ADPK
OKTO-3PYES300V30A80ns15V40A1.37V80A600VRJH60F5DPK
OKTO-3PYES300V30A90ns15V25A1.40V50A600VRJH60F0DPK
PKG
IC VCEIC VGE Typ.Typ.
tf (Resistance Load)
FRD
VCE(sat)ICVCEP/N
3Q/’10OKTO-3PYES300V30A95ns15V45A1.35V45A85A600VRJH60F6DPK
OKOKTO-3PYES300V30A80ns15V30A1.40V30A60A600VRJH60F4DPK
Tc=100℃Tc=25℃
25A
40A
50A
MPWS
OK
OK
OK
Status
OKTO-3PYES300V30A95ns15V50A1.35V90A600VRJH60F7ADPK
OKTO-3PYES300V30A80ns15V40A1.37V80A600VRJH60F5DPK
OKTO-3PYES300V30A90ns15V25A1.40V50A600VRJH60F0DPK
PKG
IC VCEIC VGE Typ.Typ.
tf (Resistance Load)
FRD
VCE(sat)ICVCEP/N
IGBT: Features and Applications by Product Type
G6H Reverse-Conducting 1,000-1200V IGBT Features
– Single-chip IGBT with Integrated Diode– Low Collector to Emitter Saturation Voltage– High-Speed Switching
Applications– Single Transistor Type Voltage Resonance Circuit– Induction Heating (IH) Cooktop– Soft Switching Applications
New Products (Target Spec)
4Q/’102Q/’10TO-3P10ATBDYES15V25A(1.70V)(25A)(50A)1200VRJH1CF5RDPK
4Q/’102Q/’10TO-3P10A2.1YES15V30A(1.65V)(30A)(60A)1200VRJH1CF6RDPK
YES
YES
YES
Diode
Body
4Q/’102Q/’10TO-3P10ATBD15V60A(2.00V)(30A)(60A)1100VRJH1BF7RDPK
(20A)
(35A)
(Tc=100℃)
IC
MPWS
2Q/’10
2Q/’10
Status
4Q/’10TO-3P10A2.115V35A(1.65V)(70A)1200VRJH1CF7RDPK
4Q/’10TO-3P10A2.515V20A(1.70V)(40A)1200VRJH1CF4RDPK
PKG
IFIC VGE Typ.Typ.
VFVCE(sat)IC
(Tc=25℃)
VCEP/N
4Q/’102Q/’10TO-3P10ATBDYES15V25A(1.70V)(25A)(50A)1200VRJH1CF5RDPK
4Q/’102Q/’10TO-3P10A2.1YES15V30A(1.65V)(30A)(60A)1200VRJH1CF6RDPK
YES
YES
YES
Diode
Body
4Q/’102Q/’10TO-3P10ATBD15V60A(2.00V)(30A)(60A)1100VRJH1BF7RDPK
(20A)
(35A)
(Tc=100℃)
IC
MPWS
2Q/’10
2Q/’10
Status
4Q/’10TO-3P10A2.115V35A(1.65V)(70A)1200VRJH1CF7RDPK
4Q/’10TO-3P10A2.515V20A(1.70V)(40A)1200VRJH1CF4RDPK
PKG
IFIC VGE Typ.Typ.
VFVCE(sat)IC
(Tc=25℃)
VCEP/N
Under development
Improved Tsc series 600V-IGBT(Non FRD)
TC=25℃
1. Features1. Features ・ Short circuit withstand time (3μs typ.) ・ Low Collector to Emitter saturation Voltage VCE(sat)・ Trench gate and thin wafer technology(G6H series) ・ High speed switching
2. Applications2. Applications ・ Inverter applications (Chopper type inverter : 1 transistor method)
3. New products plan3. New products plan
Note) The development plan of this series may be changed without notice.
P/N VCE IC VCE(sat)tf ( Resistance
Load ) FRD
PKG Status
Tc=25℃
Tc=100℃
Typ. IC VGETyp. IC VCE
WS MP
RJP60D1DPN 600V 16A 8A 1.6A 8A 15V 100ns 8A 300V NO TO-220AB OK 3Q/’10
RJP60D3DPK-M0 600V 30A 15A 1.6V 15A 15V 100ns 15A 300V NO TO-3PSG OK 3Q/’10
RJP60D0DPM 600V 40A 20A 1.6V 20A 15V 100ns 20A 300V NO TO-3PFM OK OK
RJP60D0DPK 600V 40A 20A 1.6V 20A 15V 100ns 20A 300V NO TO-3P OK OK
TO-3P/TO-3PSGTO-3PFMTO-220AB
Note) The development plan of this series may be changed without notice.
Improved Tsc series 600V-IGBT1. Features1. Features ・ Short circuit withstand time (3μs typ.) ・ Low Collector to Emitter saturation Voltage VCE(sat) ・ Built in Fast Recovery Diode (100ns typ.) in 1 PKG. ・ Trench gate and thin wafer technology(G6H series) ・ High speed switching
2. Applications2. Applications ・ Inverter applications
P/N VCE IC VCE(sat)tf ( Resistance Loa
d ) FRD
PKG Status
Tc=25℃
Tc=100℃
Typ. IC VGETyp. IC VCE
WS MP
RJH60C9DPD 600V 10A 5A 1.9V 5A 15V 250ns 5A 300V YES MP-3A OK 3Q/10
RJH60D1DPP-M0 600V 16A 8A 1.8V 8A 15V 100ns 8A 300V YES TO-220FL OK 3Q/10
RJH60D1DPE 600V 16A 8A 1.8V 8A 15V 100ns 8A 300V YES LDPAK(S) OK 3Q/10
RJH60D2DPP-M0 600V 20A 10A 1.6V 10A 15V 90ns 10A 300V YES TO-220FL OK 3Q/10
RJH60D2DPE 600V 20A 10A 1.6V 10A 15V 90ns 10A 300V YES LDPAK(S) OK 3Q/10
RJH60D3DPP-M0 600V 30A 15A 1.6V 15A 15V 100ns 15A 300V YES TO-220FL OK 3Q/10
RJH60D3DPE 600V 30A 15A 1.6V 15A 15V 100ns 15A 300V YES LDPAK(S) OK 3Q/10
RJH60D0DPK 600V 40A 20A 1.6V 20A 15V 100ns 20A 300V YES TO-3P OK 3Q/10
RJH60D5DPK 600V 60A 30A 1.6V 30A 15V 75ns 30A 300V YES TO-3P OK 3Q/10
RJH60D6DPK 600V 80A 40A 1.6V 40A 15V 90ns 40A 300V YES TO-3P OK 3Q/10
RJH60D7DPK 600V 100A 50A 1.6V 50A 15V 115ns 50A 300V YES TO-3P OK OK
TO-3PTO-220FLLDPAK(S)
TC=25℃
MP-3A
Note) The development plan of this series may be changed without notice.
High speed switching IGBT series
Part number VCE IC VCE(sat)tf
Typ. FRD
PKG Status
Typ. IC VGEWS MP
RJP6085DPN 600V 40A 1.6V 8A 15V 40ns - TO-220AB OK OK
RJP6085DPK 600V 40A 1.6V 10A 15V 40ns - TO-3P OK OK
RJH6085BDPK 600V 40A 1.6V 10A 15V 40ns YES TO-3P OK OK
RJH6086BDPK 600V 45A 1.6V 15A 15V 50ns YES TO-3P OK OK
RJH6087BDPK 600V 50A 1.6V 15A 15V 60ns YES TO-3P OK OK
RJH6088BDPK 600V 60A 1.6V 50A 15V 60ns YES TO-3P OK OK
TC=25℃
TO-3PFMTO-220AB TO-3P
1. Features1. Features ・ High speed switching ( 40-60ns typ.) ・ Low Collector to Emitter saturation Voltage VCE(sat) ・ Built in Fast Recovery Diode in 1 PKG (RJH series).
2. Applications2. Applications ・ PFC circuit
3. Line ups3. Line ups
Naming Rule for IGBT/Power MOSFET
Triac and Thyristor Promotion Products
High Commutation Triac
Spec. of commutation characteristics16A / 800V
Commutation characteristics at Tj=125 ℃
Under Under Development
Development
Other advantages
1. Lower leakage current
2. High reliability
3. Planar technology 4. Insulated Package available
Major target application
Vacuum Cleaner
Washer
0.1
1
10
100
0 20
(di/dt)c A/ms
(dV
/dt)
c
V/u
s
Target15A/ms(IGT
50mA)
Target9A/ms(IGT 35mA)
Competitor'sspec.
Specification:-VDRM: 800V- IGT: 35mA, 50mA (for 10, 12, 16A) 10mA, 35mA (for 4A)- Tj: 150 ℃
Package
TO-220,Non insulated type
TO-220F, TO-220FLInsulated type
MP-3A
Lineup:Current Part number IGT Commutation Status Package
/ Voltage (mA) (di/dt)c (A/ms) ES PP
4A / BCR4AS-16LH-1 10 2 at 10V/us available 3Q / 2010 MP-3A
800V BCR4AS-16LH 35 3.0
BCR4CM-16LH-1 10 2 at 10V/us available 3Q / 2010 TO-220
BCR4CM-16LH 35 3.0
10A / 800V BCR10CM-16LH-1 35 6.0 available 2Q / 2010 TO-220
BCR10CM-16LH 50 10.0
BCR10LM-16LH-1 35 6.0 May / 2010 2Q / 2010 TO-220FL
BCR10LM-16LH 50 10.0
12A / 800V BCR12CM-16LH-1 35 7.0 available 2Q / 2010 TO-220
BCR12CM-16LH 50 13.0
BCR12LM-16LH-1 35 7.0 May / 2010 2Q / 2010 TO-220FL
BCR12LM-16LH 50 13.0
16A / 800V BCR16CM-16LH-1 35 9.0 Available 2Q / 2010 TO-220
BCR16CM-16LH 50 15.0
BCR16LM-16LH-1 35 9.0 June / 2010 3Q / 2010 TO-220FL
BCR16LM-16LH 50 15.0
BCR16PM-16LH-1 35 9.0 available 2Q / 2010 TO-220F
BCR16PM-16LH 50 15.0
High Commutation Triac
Application example Motor control, Heater control such as Washing machine, Vacuum cleaner, etc… Features
1) High Reliability : Planar technology 2) Isolated Package : TO-220 Full mold, Viso = 1800 V (UL recognized) 3) High Temp. : 150 guarantee℃ 4) Lead Forming is available
Triac with new package (General Purpose)
Lineup
New frame TO-220FL
New Product
Part No. VDRM IT(RMS) ITSM IGT(max) Status Note
(V) (A) (A) (mA) ES MP
BCR3LM-12LB 3 30 20 OK June/’10
BCR3LM-12RB 3 30 15 OK
BCR5LM-12LB 5 50 20 OK
BCR5LM-12RB 5 50 15 OK
BCR8LM-12LB 600 8 80 30 OK ---
BCR10LM-12LB 10 100 30 OK
BCR12LM-12LB 12 120 30 OK
BCR16LM-12LB 16 160 30 OK
BCR3LM-14LB 3 30 30 OK June/’10
BCR5LM-14LB 5 50 30 OK VDRM=800V
BCR8LM-14LB 700 8 80 30 OK Available
BCR12LM-14LB 12 120 30 OK (@Tj=125 )℃BCR16LM-14LB 16 160 30 OK
Application example Motor control, Heater control such as Washing machine, Vacuum cleaner, Rice cooker etc…
Features 1) High Reliability : Planar technology 2) Isolated Package : TO-220 Full mold (UL recognized Viso = 2000 V) 3) High Temp. : 150 guarantee℃ 4) Lead Forming is available
LG series Triac (General Purpose)
Lineup
If more thermal capability is requested, LB series is available.
TO-220F
OKOK3016016BCR16PM-14LGOK
OKOKOKOKOKOKOKOKOKOKMP
OK
OKOKOKOKOKOKOKOKOKOKES
Status
VDRM=800V30505BCR5PM-14LG30303
700
BCR3PM-14LG
-3010010BCR10PM-12LG-30808BCR8PM-12LG-20505BCR5PM-12LG
(mA)(A)(A)(V)
-
(@Tj=125℃)Available
--
-
NoteIGT(max)ITSMIT(RMS)VDRMPart No.
30808800BCR8PM-16LG
3012012BCR12PM-14LG30808BCR8PM-14LG
3016016BCR16PM-12LG3012012BCR12PM-12LG
20303
600
BCR3PM-12LG
OKOK3016016BCR16PM-14LGOK
OKOKOKOKOKOKOKOKOKOKMP
OK
OKOKOKOKOKOKOKOKOKOKES
Status
VDRM=800V30505BCR5PM-14LG30303
700
BCR3PM-14LG
-3010010BCR10PM-12LG-30808BCR8PM-12LG-20505BCR5PM-12LG
(mA)(A)(A)(V)
-
(@Tj=125℃)Available
--
-
NoteIGT(max)ITSMIT(RMS)VDRMPart No.
30808800BCR8PM-16LG
3012012BCR12PM-14LG30808BCR8PM-14LG
3016016BCR16PM-12LG3012012BCR12PM-12LG
20303
600
BCR3PM-12LG
Application Motor control, Heater control such as Washing machine, Vacuum cleaner Rice cooker, etc…
Other TO-220 package Triac – Insulation type TO- 220, TO-220S,TO- 220, TO-220S, TO-220F(2), TO-220FN
LineupIsolated package
Viso: 1500VIsolated package
Viso: 2000V
Part No. VDRM Tj IT(RMS) ITSM IGT(max) Package
(V) ( )℃ (A) (A) (mA)
BCR30KM-8LB 400 150 30 300 (I, II, III) 30 TO-220FN
BCR2PM-12RE 600 150 2 10 (II, III) 10 TO-220F(2)
BCR8PM-12LE 125 8 80 (I, II, III) 30
BCR12PM-12LC 150 12 72 (I, II, III) 50
BCR16PM-12LC 150 16 96 (I, II, III) 50
BCR20KM-12LB 150 20 200 (I, II, III) 30
BCR25KM-12LB 150 25 250 (I, II, III) 50 TO-220FN
BCR25KR-12LB 150 25 250 (I, II, III) 50
BCR2PM-14LE 700/800 150/125 2 10 (II, III) 10 TO-220F(2)
BCR8PM-14LE 700 125 8 80 (I, II, III) 30
BCR8KM-16LA 800 125 8 80 (I, II, III) 30 TO-220FN
BCR8KM-20LA 1000 125 8 80 (I, II, III) 30 TO-220FN
Application Motor control, Heater control such as Washing machine, Vacuum cleaner, etc…
Other TO-220 package Triac – Non-insulation typeTO- 220, TO-220S, TO-220F(2), TO-220FNTO-220F(2), TO-220FN
Lineup
TO-220(I, II, III) 20505125600BCR5AM-12LA(I, II, III) 20505150BCR5AM-12LB(I, II, III) 30606125BCR6AM-12LA(I, II, III) 30606150BCR6AM-12LB
(I, II, III) 3020020125BCR20AM-12LA(I, II, III) 3017016150BCR16CM-12LB
(I, II, III) 3012012150BCR12CM-12LB(I, II, III) 3017016125BCR16CM-12LA
(I, II, III) 3020020150BCR20AM-12LB
(I, II, III) 3012012125BCR12CM-12LA(I, II, III) 3010010150BCR10CM-12LB(I, II, III) 3010010125BCR10CM-12LA(I, II, III) 30808150BCR8CM-12LB(I, II, III) 30808125BCR8CM-12LA
(℃)Tj Package
(mA)(A)(A)(V)IGT(max)ITSMIT(RMS)VDRMPart No.
TO-220(I, II, III) 20505125600BCR5AM-12LA(I, II, III) 20505150BCR5AM-12LB(I, II, III) 30606125BCR6AM-12LA(I, II, III) 30606150BCR6AM-12LB
(I, II, III) 3020020125BCR20AM-12LA(I, II, III) 3017016150BCR16CM-12LB
(I, II, III) 3012012150BCR12CM-12LB(I, II, III) 3017016125BCR16CM-12LA
(I, II, III) 3020020150BCR20AM-12LB
(I, II, III) 3012012125BCR12CM-12LA(I, II, III) 3010010150BCR10CM-12LB(I, II, III) 3010010125BCR10CM-12LA(I, II, III) 30808150BCR8CM-12LB(I, II, III) 30808125BCR8CM-12LA
(℃)Tj Package
(mA)(A)(A)(V)IGT(max)ITSMIT(RMS)VDRMPart No.
TO-220S(I, II, III) 30808125600BCR8CS-12LA(I, II, III) 30808150(I, II, III) 3010010125
(℃)Tj Package
(mA)(A)(A)(V)IGT(max)ITSMIT(RMS)VDRMPart No.
TO-220S(I, II, III) 30808150600
(I, II, III) 3012012150
(℃)Tj Package
(mA)(A)(A)(V)IGT(max)ITSMIT(RMS)VDRMPart No.
BCR8CS-12LBBCR10CS-12LB 150BCR12CS-12LB
10 100 (I, II, III) 30
Small Power & Compact Triac
LineupA6 forming is available
BCR3AM-12B & BCR3AM-14B
Standard A6
5.0±0.5
2.0±
0.5
2.5±0.5 2.5±0.5
Standard A63A Triac in TO-92!
TO- 92, UPAK, MP- 3A, DPAK(L)-(3)
Application example
AC switch, fan motor, rice cooker,
Electric pot, washing machine etc.
SOT-223’10/10OK(I, II, III) 580.8125BCR08DS-14A
TO-92OKOK(I, II, III) 15303150BCR3AM-12B
MP-3A’10/7OK(I, II, III) 1092125BCR2AS-14A
MP-3AOKOK(I, II, III) 30505125BCR5AS-14ATO-92
TO-92MP-3A
TO-92
MP-3AMP-3A
DPAK(L)-(3)MP-3AMP-3A
DPAK(L)-(3)
TO-92TO-92UPAKTO-92
Package
@Tj=125℃VDRM=800V
Note
OKOK(I, II, III) 15303150BCR3AS-12BOKOK(I, II, III) 15303125BCR3AS-12A
’10/7OK(I, II, III) 1081125800BCR1BM-16A
OKOK(I, II, III) 30303150BCR3AM-14BOKOK(I, II, III) 30303150BCR3AS-14B
OKOK(I, II, III) 580.8125700BCR08AM-14A
OKOK(I, II, III) 30505125BCR5AS-12AOKOK(I, II, III) 30505125BCR5AS-12AOKOK(I, II, III) 30505150BCR5AS-12B
OKOK(I, II, III) 15303125BCR3AS-12A
OKOK(I, II, III) 7101125BCR1AM-12AOKOK(I, II, III) 5, (IV) 10101125BCR1AM-12OKOK(I, II, III) 5, (IV) 1080.8125BCR08AS-12AOKOK(II, III) 580.8125600BCR08AM-12A
(℃)Tj
MPESStatus
(mA)(A)(A)(V)IGT(max)ITSMIT(RMS)VDRMPart No.
SOT-223’10/10OK(I, II, III) 580.8125BCR08DS-14A
TO-92OKOK(I, II, III) 15303150BCR3AM-12B
MP-3A’10/7OK(I, II, III) 1092125BCR2AS-14A
MP-3AOKOK(I, II, III) 30505125BCR5AS-14ATO-92
TO-92MP-3A
TO-92
MP-3AMP-3A
DPAK(L)-(3)MP-3AMP-3A
DPAK(L)-(3)
TO-92TO-92UPAKTO-92
Package
@Tj=125℃VDRM=800V
Note
OKOK(I, II, III) 15303150BCR3AS-12BOKOK(I, II, III) 15303125BCR3AS-12A
’10/7OK(I, II, III) 1081125800BCR1BM-16A
OKOK(I, II, III) 30303150BCR3AM-14BOKOK(I, II, III) 30303150BCR3AS-14B
OKOK(I, II, III) 580.8125700BCR08AM-14A
OKOK(I, II, III) 30505125BCR5AS-12AOKOK(I, II, III) 30505125BCR5AS-12AOKOK(I, II, III) 30505150BCR5AS-12B
OKOK(I, II, III) 15303125BCR3AS-12A
OKOK(I, II, III) 7101125BCR1AM-12AOKOK(I, II, III) 5, (IV) 10101125BCR1AM-12OKOK(I, II, III) 5, (IV) 1080.8125BCR08AS-12AOKOK(II, III) 580.8125600BCR08AM-12A
(℃)Tj
MPESStatus
(mA)(A)(A)(V)IGT(max)ITSMIT(RMS)VDRMPart No.
SOT-223
Schedule: ES: available MP: 7 / 2010
High dV/dt Triac, TO-92
BCR1BM-16ANew Product
1. T2 Terminal
2. Gate Terminal
3. T1 Terminal
500
dV/dt(V/us)
10 (I,II,III)
IGT
(mA)
8
ITSM
(A)
1
IT(RMS)
(A)
TO-92125800BCR1BM-16A
packageTj (℃)VDRM
(V)
500
dV/dt(V/us)
10 (I,II,III)
IGT
(mA)
8
ITSM
(A)
1
IT(RMS)
(A)
TO-92125800BCR1BM-16A
packageTj (℃)VDRM
(V)
Application example Rush current protection(SMPS), heater control, Motor control
Features 1) High reliability : Planar technology 2) Isolated Package : TO-220 Full Mold (TO-220FN,TO-220F)
TO-3P Full Mold (TO-3PFM) 3) High voltage : 1000V,1500V 4) High current : 25A / 30A @ TO-220FN 5) Lead Forming is available TO-3PFM
High Power Triac
Lineup
Part No. VDRM Tj IT(RMS) ITSM IGT(max) Status Package
(V) ( )℃ (A) (A) (mA) ES MP
BCR30KM-8LB 400 150 30 300 30 OK OK TO-220FN
BCR25KM-12LB 600 150 25 250 50 OK OK TO-220FN
BCR16RM-12LB 150 16 160 30 OK OK TO-3PFM
BCR25RM-12LB 150 25 250 50 OK OK
BCR30AM-12LB 150 30 300 50 OK OK TO-3P
BCR8PM-20LA 1000 125 8 80 30 OK OK TO-220F
BCR20RM-30LA 1500 125 20 200 50 OK OK TO-3PFM
Application example Printer, Copier (Lamp, Halogen heater), Motor control, Inrush current protection circuit (SW power supply, Inverter lamp), etc… Features 1) Improved life time at repetitive inrush current : AL ribbon technology 2) Isolated Package : TO-220 Full mold 3) High Temp. : 150 guarantee℃ 4) Lead Forming is available
Customer’s benefit : Make your system with repetitive inrush current operation more reliable
Triac with AL Ribbon
Lineup AL ribbon AL wire
longer life-time at repetitive
inrush current
250160(A)
ITSM
150150(℃)Tj
TO-220F’09/5OK3016600BCR16PR-12LBOK
MP
OK
ESStatus
(mA)(A)(V)
TO-220FN
PackageIGT(max)IT(RMS)VDRMPart No.
5025600BCR25KR-12LB 250160(A)
ITSM
150150(℃)Tj
TO-220FOKOK3016600BCR16PR-12LBOK
MP
OK
ESStatus
(mA)(A)(V)
TO-220FN
PackageIGT(max)IT(RMS)VDRMPart No.
5025600BCR25KR-12LB
Application example Low inrush current application such as ceramic heater Features 1) High Reliability : Planar technology 2) Isolated Package : TO-220 Full mold (UL recognized) 3) High Temp. : 150 guarantee℃ 4) High noise immunity: IGT 50mA≦ 5) Lead Forming is available
Triac for low inrush current, LC/LD series
LineupTO-220FL TO-220F TO-220F(2)
Part No. VDRM Tj IT(RMS) ITSM IGT(max) Status Package
(V) ( )℃ (A) (A) (mA) CS MP
BCR8LM-12LD 150 8 48 50 OK July/’10 TO-220FL
BCR10LM-12LD 150 10 60 50 May/’10 July/’10
BCR12LM-12LD 150 12 72 50 OK July/’10
BCR16LM-12LD 150 16 96 50 OK July/’10
BCR8PM-12LD 600 150 8 48 50 OK OK TO-220F
BCR10PM-12LD 150 10 60 50 OK OK
BCR12PM-12LC 150 12 72 50 OK OK TO-220F(2)
BCR12PM-12LD 150 12 72 50 OK OK TO-220F
BCR16PM-12LC 150 16 96 50 OK OK TO-220F(2)
BCR16PM-12LD 150 16 96 50 OK OK TO-220F
BCR5LM-14LD 150 5 30 50 OK July/’10 TO-220FL
BCR8LM-14LD 150 8 48 50 May/’10 July/’10
BCR12LM-14LD 150 12 72 50 May/’10 July/’10
BCR5PM-14LD 700 150 5 30 50 OK OK TO-220F
BCR8PM-14LD 150 8 48 50 OK OK
Application example Heater control, Igniter, Regulator, Motor control, Inrush current protection circuit (SW power supply, Inverter lamp, Inverter) etc…
Features 1) High Reliability : Planar technology 2) High Temp. : 150 guarantee℃ 3) Lead Forming is available Customer’s benefit - Improve reliability - Increase thermal margin - Reduce size of heat-sink - Can be used in hot environment
New Product
150 ℃ guaranteed Thyristor
Lineup
TO-220OKOK10906
150600
CR6CM-12BOKOK151208CR8CM-12BOKOK3036012CR12CM-12B
TO-220FOKOK10906CR6PM-12BOKOK151208CR8PM-12BOKOK3036012CR12PM-12B
TO-3PFMOKOK3036025CR25RM-12D
(A)I(TSM)
(℃)Tj
MPESStatus
(mA)(A)(V)PackageIGT(max)IT(AV)VDRMPart No.
TO-220OKOK10906
150600
CR6CM-12BOKOK151208CR8CM-12BOKOK3036012CR12CM-12B
TO-220FOKOK10906CR6PM-12BOKOK151208CR8PM-12BOKOK3036012CR12PM-12B
TO-3PFMOKOK3036025CR25RM-12D
(A)I(TSM)
(℃)Tj
MPESStatus
(mA)(A)(V)PackageIGT(max)IT(AV)VDRMPart No.
Application example Heater control, Igniter, Regulator, Motor control, Inrush current protection circuit (SW power supply, Inverter lamp, Inverter) etc… Features 1) Junction temperature : 110 , 125℃ ℃ 2) IGT item is available 3) Lead Forming is available
General Thyristor
Lineup
OKOK10906125CR6PM-12AOKOK151208125CR8PM-12AOKOK3036012125CR12PM-12A
TO-220OKOK10906125CR6CM-12AOKOK151208125CR8CM-12A
DPAK(L)-(3)OKOK0.1905125CR5AS-12
TO-92OKOK0.1100.4125600CR04AM-12OKOK0.1100.3110CR05AM-12OKOK0.1200.3110CR03AM-12OKOK0.180.5125CR05BM-12
UPAKOKOK0.1100.8125CR08AS-12MP-3AOKOK0.1905125CR5AS-12
TO-220FNOKOK0.1703125CR3KM-12OKOK10906125CR6KM-12AOKOK151208125CR8KM-12A
TO-220FOKOK0.1703125CR3PM-12
OKOK3036012125CR12CM-12A
OKOK0.1200.3110CR03AM-16TO-92OKOK0.1100.3110800CR05AM-16
MPAKOKOK0.1100.1125CR05BS-8UPAKOKOK0.1100.5125CR05AS-8
TO-92(3)OKOK0.1100.3125CR02AM-8TO-92OKOK0.1100.3125400CR02AM-8
(A)I(TSM)
(℃)Tj
MPESStatus
(mA)(A)(V)PackageIGT(max)IT(AV)VDRMPart No.
OKOK10906125CR6PM-12AOKOK151208125CR8PM-12AOKOK3036012125CR12PM-12A
TO-220OKOK10906125CR6CM-12AOKOK151208125CR8CM-12A
DPAK(L)-(3)OKOK0.1905125CR5AS-12
TO-92OKOK0.1100.4125600CR04AM-12OKOK0.1100.3110CR05AM-12OKOK0.1200.3110CR03AM-12OKOK0.180.5125CR05BM-12
UPAKOKOK0.1100.8125CR08AS-12MP-3AOKOK0.1905125CR5AS-12
TO-220FNOKOK0.1703125CR3KM-12OKOK10906125CR6KM-12AOKOK151208125CR8KM-12A
TO-220FOKOK0.1703125CR3PM-12
OKOK3036012125CR12CM-12A
OKOK0.1200.3110CR03AM-16TO-92OKOK0.1100.3110800CR05AM-16
MPAKOKOK0.1100.1125CR05BS-8UPAKOKOK0.1100.5125CR05AS-8
TO-92(3)OKOK0.1100.3125CR02AM-8TO-92OKOK0.1100.3125400CR02AM-8
(A)I(TSM)
(℃)Tj
MPESStatus
(mA)(A)(V)PackageIGT(max)IT(AV)VDRMPart No.
Renesas TRIACs Series Line up – 400V, 600V
-
-
-
-
-
-
-
-
-
-
-
-
BCR08AS-12A
-
UPAK
---BCR30KM-8LB-----30A400V
BCR25RM-12LB
---BCR25KM-12LBBCR25KR-12LB
-----25A
-
BCR20KM-12LABCR20KM-12LB
-
-
-
-
-
TO-220FN
--12LB
-------30A
-----BCR20AM-12LABCR20AM-12LB
---20A
BCR16RM-12LB
-
BCR16PM-12LABCR16PM-12LBBCR16PM-12LDBCR16PM-12LGBCR16PR-12LB
BCR16CM-12LABCR16CM-12LB
---16A
--
BCR12PM-12LABCR12PM-12LBBCR12PM-12LDBCR12PM-12LG
BCR12CS-12LBBCR12CM-12LABCR12CM-12LB
---12A
--
BCR10PM-12LABCR10PM-12LBBCR10PM-12LDBCR10PM-12LG
BCR10CS-12LBBCR10CM-12LABCR10CM-12LB
---10A
--
BCR8PM-12LABCR8PM-12LBBCR8PM-12LDBCR8PM-12LG
BCR8CS-12LBBCR8CM-12LABCR8CM-12LB
---8A
-----BCR6AM-12LABCR6AM-12LB
---6A
5A
3A
2A
1A
0.8A
IT(RMS)
--BCR5PM-12LABCR5PM-12LBBCR5PM-12LG
-BCR5AM-12LABCR5AM-12LB
BCR5AS-12ABCR5AS-12ABCR5AS-12B
-
--BCR3PM-12LABCR3PM-12LBBCR3PM-12LG
--BCR3AS-12ABCR3AS-12ABCR3AS-12B
-
--------
--------BCR1AM-12
BCR1AM-12A
--------BCR08AM-12A600V
VDRM
TO-3PFM
TO-3PTO-220FTO-220STO-220DPAK(L)-(3)
MP-3ATO-92
-
-
-
-
-
-
-
-
-
-
-
-
BCR08AS-12A
-
UPAK
---BCR30KM-8LB-----30A400V
BCR25RM-12LB
---BCR25KM-12LBBCR25KR-12LB
-----25A
-
BCR20KM-12LABCR20KM-12LB
-
-
-
-
-BCR30AM-12LB
-------30A
-----BCR20AM-12LABCR20AM-12LB
---20A
BCR16RM-12LB
-
BCR16PM-12LABCR16PM-12LBBCR16PM-12LDBCR16PM-12LGBCR16PR-12LB
BCR16CM-12LABCR16CM-12LB
---16A
--
BCR12PM-12LABCR12PM-12LBBCR12PM-12LDBCR12PM-12LG
BCR12CS-12LBBCR12CM-12LABCR12CM-12LB
---12A
--
BCR10PM-12LABCR10PM-12LBBCR10PM-12LDBCR10PM-12LG
BCR10CS-12LBBCR10CM-12LABCR10CM-12LB
---10A
--
BCR8PM-12LABCR8PM-12LBBCR8PM-12LDBCR8PM-12LG
BCR8CS-12LBBCR8CM-12LABCR8CM-12LB
---8A
-----BCR6AM-12LABCR6AM-12LB
---6A
5A
3A
2A
1A
0.8A
IT(RMS)
--BCR5PM-12LABCR5PM-12LBBCR5PM-12LG
-BCR5AM-12LABCR5AM-12LB
BCR5AS-12ABCR5AS-12ABCR5AS-12B
-
--BCR3PM-12LABCR3PM-12LBBCR3PM-12LG
--BCR3AS-12ABCR3AS-12ABCR3AS-12B
-
--BCR2PM-12RE-----
--------BCR1AM-12
BCR1AM-12A
--------BCR08AM-12A600V
VDRM
TO-3PFM
TO-3PTO-220FLTO-TO-220STO-220DPAK(L)-(3)
MP-3ATO-92
BCR3LM-12RBBCR3LM-12LB
BCR5LM-12RBBCR5LM-12LB
-
TO-220F(2)
BCR8PM-12LE BCR8LM-12LBBCR8LM-12LD
BCR10LM-12LBBCR10LM-12LD
BCR12PM- 12LC
BCR16PM- 12LC
BCR12LM-12LBBCR12LM-12LD
BCR16LM-12LBBCR16LM-12LD
-
-
-
-
Renesas TRIACs Series Line up – 700V, 800V, 1000V, 1500V
---BCR12PM-14LABCR12PM-14LG
-----12A
-
-
-
-
-
-
-
-
-
BCR8KM-20LA
BCR8KM-16LA
-
-
-
TO-220FN
--BCR2PM-14LE------2A
---BCR3PM-14LG--BCR3AS-14BBCR3AM-14B3A
--------BCR08AM-14A0.8A700V
--BCR8PM-14LEBCR8PM-14LABCR8PM-14LDBCR8PM-14LG
----8A
---BCR5PM-14LABCR5PM-14LDBCR5PM-14LG
---5A
---BCR8PM-16LABCR8PM-16LG
-----8A
---BCR16PM-14LG----16A
20A
8A
IT(RMS)
BCR20RM-30LA--------1500V
---BCR8PM-20LA-----1000V
VDRM
TO-3PFM
TO-3PTO-220F(2)
TO-220FTO-92
---BCR12PM-14LABCR12PM-14LG
-----12A
-
-
-
-
-
-
-
-
SOT-223
-
BCR8KM-20LA
BCR8KM-16LA
-
-
-
TO-220FN
--BCR2PM-14LE------2A
---BCR3PM-14LG--BCR3AM-14B3A
--------BCR08AM-14A0.8A700V
--BCR8PM-14LEBCR8PM-14LABCR8PM-14LDBCR8PM-14LG
----8A
---BCR5PM-14LABCR5PM-14LDBCR5PM-14LG
---5A
---BCR8PM-16LABCR8PM-16LG
----8A
800V
---BCR16PM-14LG----16A
20A
8A
IT(RMS)
BCR20RM-30LA--------1500V
---BCR8PM-20LA-----1000V
VDRM
TO-3PFM
TO-3PTO-220F(2)
TO-220FTO-92 TO-220 TO-220S TO-220FLMP-3A
BCR5AS-14A
BCR08DS-14A
1A BCR1BM-16A ----------
BCR3LM-14LB
BCR5LM-14LB
BCR5LM-14LD
BCR8LM-14LB
BCR8LM-14LD
BCR12LM-14LBBCR12LM-14LDBCR16LM-14LB
-
-
-
-
Low power Use
General Use
*: New Products
Renesas Thyristors Line up
〇0.1mA10A0.1A400V125℃CR05BS-8MPAK〇0.1mA10A0.8A600V125℃CR08AS-12〇0.1mA10A0.5A400V125℃CR05AS-8UPAK〇0.1mA10A0.3A800V110℃CR05AM-16〇0.1mA20A0.3A800V110℃CR03AM-16〇0.1mA8A0.5A600V125℃CR05BM-12〇0.1mA10A0.4A600V125℃CR04AM-12〇0.1mA10A0.3A600V110℃CR05AM-12〇0.1mA20A0.3A600V110℃CR03AM-12〇0.1mA10A0.3A400V125℃CR02AM-8TO-92
StatusIGT(max)ITSMIT(AV)VDRMTjPart No.Package
〇0.1mA10A0.1A400V125℃CR05BS-8MPAK〇0.1mA10A0.8A600V125℃CR08AS-12〇0.1mA10A0.5A400V125℃CR05AS-8UPAK〇0.1mA10A0.3A800V110℃CR05AM-16〇0.1mA20A0.3A800V110℃CR03AM-16〇0.1mA8A0.5A600V125℃CR05BM-12〇0.1mA10A0.4A600V125℃CR04AM-12〇0.1mA10A0.3A600V110℃CR05AM-12〇0.1mA20A0.3A600V110℃CR03AM-12〇0.1mA10A0.3A400V125℃CR02AM-8TO-92
StatusIGT(max)ITSMIT(AV)VDRMTjPart No.Package
〇30mA360A12A600V125℃CR12PM-12A〇10mA90A6A600V150℃CR6PM-12B*〇15mA120A8A600V150℃CR8PM-12B*
〇30mA360A12A600V125℃CR12CM-12A〇10mA90A6A600V150℃CR6CM-12B*〇15mA120A8A600V150℃CR8CM-12B*
〇30mA360A25A600V150℃CR25RM-12D*TO-3PFM〇30mA360A12A600V150℃CR12CM-12B*
〇0.1mA90A5A600V125℃CR5AS-12MP-3A
〇15mA120A8A600V125℃CR8CM-12A
〇0.1mA90A5A600V125℃CR5AS-12DPAK(L)-(3)
〇10mA90A6A600V125℃CR6CM-12ATO-220〇30mA360A12A600V150℃CR12PM-12B*
〇15mA120A8A600V125℃CR8PM-12A〇10mA90A6A600V125℃CR6PM-12A〇0.1mA70A3A600V125℃CR3PM-12TO-220F〇15mA120A8A600V125℃CR8KM-12A〇10mA90A6A600V125℃CR6KM-12A〇0.1mA70A3A600V125℃CR3KM-12TO-220FN
StatusIGT(max)ITSMIT(AV)VDRMTjPart No.Package
〇30mA360A12A600V125℃CR12PM-12A〇10mA90A6A600V150℃CR6PM-12B*〇15mA120A8A600V150℃CR8PM-12B*
〇30mA360A12A600V125℃CR12CM-12A〇10mA90A6A600V150℃CR6CM-12B*〇15mA120A8A600V150℃CR8CM-12B*
〇30mA360A25A600V150℃CR25RM-12D*TO-3PFM〇30mA360A12A600V150℃CR12CM-12B*
〇0.1mA90A5A600V125℃CR5AS-12MP-3A
〇15mA120A8A600V125℃CR8CM-12A
〇0.1mA90A5A600V125℃CR5AS-12DPAK(L)-(3)
〇10mA90A6A600V125℃CR6CM-12ATO-220〇30mA360A12A600V150℃CR12PM-12B*
〇15mA120A8A600V125℃CR8PM-12A〇10mA90A6A600V125℃CR6PM-12A〇0.1mA70A3A600V125℃CR3PM-12TO-220F〇15mA120A8A600V125℃CR8KM-12A〇10mA90A6A600V125℃CR6KM-12A〇0.1mA70A3A600V125℃CR3KM-12TO-220FN
StatusIGT(max)ITSMIT(AV)VDRMTjPart No.Package