renesas electronics america inc. power and standard products consumer and industrial business unit...

Renesas Electronics America Inc.

Power and Standard ProductsConsumer and Industrial Business Unit

June 24, 2010

AGENDA

1) Introduction2) MOSFET3) IGBT4) Triac5) Diode6) Resources and SummaryAppendix

Product Promotion Goals

Win designs and grow revenue by promoting Renesas’ standard products to a broader customer base by:

1. Promoting more product families (not just lvMOSFET).2. Which will address more applications3. And allow us to activate sales thru sales reps, Digikey, and

distribution.

Product Promotion Status

General promotion products:(Parts are price competitive, AE, Marketing, Sample support all available)

20V to 30V MOSFETs Mid-Voltage MOSFETs (40V to 80V is competitive, 80V+ non-competitive) Triacs/Thyristors IGBT’s (Price competitiveness under evaluation)

Limited promotion products: Zener & Schottky Barrier Diodes – Application limited to Mobile Apps Sawn Zener Diodes – Application limited to LED lighting lpSRAM & EEPROM - Price limited Small Power MOSFETs – Price limited

Very Limited promotion products: Li+ Smart Battery IC restricted to just major NBPC OEM - Due to N. American support

limitations PFC to just one test N. American Customer- Due to N. American support limitations Other MSIG Devices - Due to N. American support limitations High Power MOSFETs - Due to non-competitive pricing Other Vregs - Due to non-competitive pricing

How have we won Power Device business?

1) Provide best price:performance for new designs.• Very low switching costs – no software, no training, little loyalty, • Process is:

A. Get application data from customer; for example Vin, Vout, Imax, etc.B. Identify best fit parts thru REA AE’s and Japan AE’sC. Get competitor’s price from customerD. Offer an equal or lower price

2) Or, exploit shortages

Power Device Relative Characteristics

Application voltage, current, and switching frequency requirements dictate which power device is appropriate

From Wikimedia

And Triac

http://upload.wikimedia.org/wikipedia/commons/2/24/Switches_domain.svg

Power Management Devices and Standard Product Group

Tad KeeleyDirector

Tetsuo SatoDirector,

AE & Business Development

Mark De FreitasManager, Product &

Tactical Marketing

Chris LeeManager,

Business Development And Apps Engineering

Anthony O’ScierFAE

(Austin)

Jim ComstockApplication Engineer

Yoko WatanabeManager,

Product Marketing

Jessica YamadaManager,Tactical &

Product Marketing

Discrete, Power, & Standard Product Support Matrix

CUSTOMER PRODUCT TACTICAL APPLICATION BUSINESS DEVMARKETING MARKETING ENGINEERING

LV Power Product Apple, Intel, West Coast Mark De Freitas Mark De Freitas Jim Comstock Tetsuo Sato

LV Power Product AMD, East Coast Mark De Freitas Mark De Freitas Chris Lee Tetsuo Sato

LV Power Product Dell Mark De Freitas Jessica Yamada A O'Scier Chris Lee

Ex- NEC LV Power Product All Yoko Watanabe Yoko Watanabe

A O'Scier (Texas)/Jim Comstock (CA)/Chris Lee (Everywhere Else) Tetsuo Sato

lpSRAM & EEPROM All Jessica Yamada Jessica Yamada Tokyo Tad Keeley

Triacs, IGBTs, Hi Pwr FETs All

Mark De Freitas/Tad Keeley Mark De Freitas Tetsuo Sato (Acting) Tetsuo Sato

Other Gen Purpose & MSIG All Mark De Freitas Mark De Freitas Tokyo Tetsuo Sato

Motor Driver HGST None None Chris Lee (Acting) Tetsuo Sato

RESPONSIBILITIES PRODUCT MARKETING: Market research, channel strategies, sales training, product lifecylce management, promotions, (new product definition)TACTICAL MARKETING: Quotes, Sales support for opportunity management, SMG support for delivery issues.APPLICATION ENGINEERING: Application EngineeringBUSINESS DEV: Product Definition and development support, chipset partner support, etc.

MOSFET

MOSFET: Combined Market Share 20V-100V

1 Toshiba 8.6%

2 Infineon 8.1%

3 ST Micro 7.1%

4 Vishay 6.5%

5 Rohm 6.3%

6 Fairchild 5.9%

7 NXP 4.9%

8 Mitsubishi

4.7%

9 On Semi 4.5%

10 IR 4.0%

11 Renesas 3.6%

12 Fuji Elect 3.4%

13 NECEL 3.4%

14 Panasonic 2.7%

15 Microsem 2.4%

16 Others 23.8%

47.0%

Discrete2008 Billing $17.3B

(Gartner)

1 Fairchild 10.1%

2 Vishay 9.3%

3 Toshiba 7.9%

4 Infineon 6.7%

5 ST Micro 6.3%

6 Fuji Elect, 5.8%

7 Mitsubishi

5.3%

8 IR 4.8%

9 NECEL 4.4%

10 On Semi 3.9%

11 Renesas 3.7%

12 Rohm 3.5%

13 Sanken 3.0%

14 Sanyo 2.6%

15 NXP 2.3%

16 Others 20.4%

38.1%

Power Devices2008 Billing $12.1B

(Marketing Eye)

1 Vishay 13.4%

2 Fairchild 13.0%

3 IR 12.4%

4 NECEL 9.3%

5 Toshiba 8.6%

6 Renesas 7.9%

7 Rohm 6.2%

8 AOL 6.1%

9 Sanyo 4.8%

10 Infineon 4.4%

11 On Semi 3.7%

12 ST Micro 2.4%

13 Others 7.8%

117.1%

LV MOSFET2008 Billing $3.7B

(Marketing Eye)

MOSFET: Ranking and Market Share Summary 20V-100V

Source: Market Eye, March 2009

Vishay

Fairchild

IR

Toshiba

Rohm

Alpha & Omega

Sanyo

Infineon Technologies

On Semi

1

2

3

4

5

6

7

8

9

10

Low Voltage MOSFETs

Renesas Electronics

2009 Rankings

Renesas 17.1%

Vishay 13.4%

Fairchild 13%

IR 12.4%

Toshiba8.6%

Alpha & Omega6.1%

Sanyo 4.8%

Infineon 4.4%

On Semi 3.7%

ST 2.4%

Others7.8%

Rohm 6.2%

2009 Share

LV MOSFET: Application Map by Package

IndustrialMotor, Battery

UPS

What’s Important: Technology • Stable Supply • Quality and Reliability

MOSFET: Capacity and Shipments

Renesas Electronics:Total Low voltage MOSFET package monthly capacity 186Mu/M

0 500 1,000

1.0 billion Renesas Electronics Power Management and General purpose devices shipped each month

Components (1000M)

D-PAK62Mu

D-PAK62Mu

TO-251 14MuTO-251 14MuHWSON 15MuHWSON 15Mu

SOP8 20MuSOP8 20MuWPAK30Mu

WPAK30Mu

TO-220 13MuTO-220 13Mu

TO-220 13MuTO-220 13Mu

LFPAK 11MuLFPAK 11MuTO-263 8MuTO-263 8Mu

Dr.MOS 2MuDr.MOS 2Mu


VSOF 6MuVSOF 6MuMini HVSON 5MuMini HVSON 5Mu

PPM level

Defect rate

80 PPB

30 PPB

Single PPB

20092003 Future

PPB level

Defect rate

WW No.1 Quality and Reliability

1 PPM =1 in 1,000,000 units1 PPB =1 in 1,000,000,000 units


Leader in MOSFET quality as proven with high-volume customers

Zero failures reported for ten consecutive years

15

Integrated &

High Function

Hig

h F

requency

, H

igh E

ffici

ency

11stst Gen. Gen.DrMOSDrMOS

22ndndGen.Gen.DrMOSDrMOS

High Freq. &

Low Loss

Built-in SBD

WPAK(D)WPAK(D)

Compound

Smaller

POL-SiP (IC+Driver+MOS)

High-MOS

Low-MOS

Driver IC

ParasiticInductance (6x6(6x6

mm)mm)

JET+SBDJET+SBD

1st Gen. PKG 1st Gen. PKG 1st Gen. PKG 2nd Gen. PKG 2nd Gen. PKG 2nd Gen. PKG

LV P-MOS & DrMOS Road Map for SMPS

WPAK-DualWPAK-Dual

・ Low gate Charge

BEAM+SBD

HWSON3030

JET-MV(~100V)・ Logic gate Drive

Low Ron

Next MV

HWSON3044-D

22ndnd.Gen.GenHP-DrMOSHP-DrMOS

2ndGen.S-DrMOS

2ndGen.HV-DrMOS

Hi Voltage

2nd Gen.POL-SiP

Hi Performance

POL-Sip: Control IC & MOSFETs

3rd.Gen3rd.GenHP-DrMOSHP-DrMOS

{Under Study}

Post BEAM

NEXTWINFET

12th Gen.

NEXTWINFET

12th Gen.

Mini-HVSON（ Cu-Clip)

MS-DrMOSMS-DrMOS

HVSON(Cu-Clip)

QFN56QFN56(8x8 mm)(8x8 mm)

WPAKWPAK LFPAK-iLFPAK-iLFPAKLFPAK

Low

Ron

Speed (30V)9th Gen.

Speed (30V)9th Gen.

Hi FOM

(Ron.Qg)

JET (30V)10th Gen.JET (30V)10th Gen.

BEAM (25-30V)11th Gen.

BEAM (25-30V)11th Gen.

WINFET(~25V)

12th Gen.

WINFET(~25V)

12th Gen.

D8-L (30-100V)

D8-L (30-100V)

2002 ~ 2004 | 2005 | 2006 | 2007 | 2008 | 2009 | 2010 | 2011 ~

Gate

Dra

in C

harg

e

Q

gd

[n

C]

10

Fairchild

1

0.31 10 20

TI/Ciclon

Next Gen.understudy

WINFET

RDS(on) [mΩ] @VGS=4.5V5

5

Hig

h pe

rfor

man

ce

Comparison of FOM* (FOM* Figure of Merit)

Lo side MOSFETHi side MOSFET

Low Ron.Qgd achieving low switching loss

Low Ron reducing conduction loss

RD

S(o

n)

typ

[m

Ω]

Vg

s =

4.5

V

200620042002

8th Gen.

2012

3.4mΩRJK0301DPB

9th Speed

2014

0.5

2.5

3.0

1.9mΩ

2.0

3.0mΩ

2008 2010

RJK0346DPA

RJK03C0DPA

10th JET

11th BEAM

1.7mΩ

1.0

1.5

3.5HAT2165H

Next Gen.

Under Study

30V Nch MOS30V Nch MOS30V Nch MOS30V Nch MOS

Application Examples

Intersil VRD11 Demo BoardThis dual processor board contains 24 LFPAK MOSFETs!

Murata Isolated POL ConverterHigh density board capable of handling high current for Telecom apps

Small Appliance Examples:Ultreo ultrasonic Toothbrush, Norelco Electric ShaverApple MacBook

Up to 16 FETs/system (depending on model) drive volumes tomillions of pieces per month!

Power MOSFET Process Technology

Continuous Process Development for Further InnovationContinuous Process Development for Further InnovationContinuous Process Development for Further InnovationContinuous Process Development for Further Innovation

‘04‘02 ’08

Normalized Die size (40V class / Nch)

1

0.8

0.6

UMOS (Trench)

Flagship Product4.3mohm40V, 88A

(FY)

UnderDevelopment

0.660.66

1.001.00

0.66

0.800.80

1.4mohm40V, 110A

Super Junction + UMOS

SJ2SJ20.25µm0.25µm

Cell Structure

Process Release

New New GenerationGeneration

LaboratoryResearch Level

’11~'12

Ron Reduction with Ron Reduction with UMOS/SJ combined processUMOS/SJ combined process

Ron Reduction with cell shrinkRon Reduction with cell shrink

'10

UMOS20.5µmRule

UMOS3

0.35µm

UMOS4

0.25µm

SJ10.35µm

Low Ciss(compare UMOS4:60%)

NEW

Industrial/AutomotivePMOS Package Roadmap

TO-220AB

Isolated TO-220

TO

-25

1 T

O-2

20

IS

OTO

-22

0

~200A

TO-263-7pin

+clip or ribbon bond

Bare dieHigh current, Low resistance

20062006 201220122010201020042004～～ 20022002

~180A~180A

TO-263-7pin500μmφ

Ad.TO-263

~110A~110A

400μmφ

TO-220SMD

~ 88A

TO-251

Ad.TO-252

~ 90A

TO-252

~ 60A8pin HSON

20082008 20092009

Small & Low Rth

Small

small &low heat generation

under planning

under development

Target – Power Tools

PMD use in Application Motor power switching/Battery pack protection

Renesas Product NP Series MOSFETs 2SK Series MOSFETs

Renesas Key Advantage NP devices have extended temperature range and built in gate ESD protection to

stand up to harsh use environments Increased gate resistance (Rg) reduces current spikes during switching to improve

reliability Extremely low DPM (0.03) (30 Defects per Billion)

Target – Power Tool

Key Opportunity Questions we will need to gather together for this type of opportunity

Business– Design Win decision process– Name of Decisions makers / Location– Decision timeline– Volume / Timeframe– MP location/ CM or ODM/Direct or Disti

Technical– Motor Voltage– Motor Amperage– DC or AC motor. If AC, switching frequency– Ambient Temperature Range– Battery voltage and capacity

Target – UPS

PMD use in Application Power conversion, Battery protection, Control

Renesas Product NP Series 55V MOSFETs

Renese Key Advantage Quality

Converter Inverter

Bypass

Battery

HFNoise

Example Application

Target – UPS

Key Opportunity Questions

Business– Design Win decision process– Name of Decisions makers / Location– Decision timeline– Volume / Timeframe– MP location/contact, CM or ODM, Direct/Disti

Technical– We need to learn talking to customer to understand designs

MOSFET: Guidance for Appropriate Part Identification

• Our “Sweet Spot” for LV is 30V

• Many opportunities can be covered with “JET” series

• High D-in success rate in US Market

• Use the Q&A from the RSSI Site “Rep Sales Guide”

• With our vast lineup of LV and MV MOSFETs, IGBTs, and Triacs, we have a “fit” for just about any application.

• For assistance, please contact the appropriate team member at HQ.

Target – Smart grid

PMD use in Application Meter Power Supply

NEC Product UPA2792 (Complementary N+P MOSFET) lower price version Detail spec by Fairchild $0.15 target price

NEC Key Advantage Quality Extended temperature range

Target – Smart Grid

Key Opportunity Questions we will need to gather together for this type of opportunity

Business– Design Win decision process– Name of Decisions makers / Location– Decision timeline– Volume / Timeframe– MP locations/CM or ODM/Direct or Disti

Technical– We need to learn talking to customers to get design information

MOSFET: Call to Action

Re-engage with DC-DC module accounts to present latest technology for Low and Middle Voltage FETs

Profile Power tool customers and introduce NP series products (Milwaukee Tool, DeWalts, and Black & Decker…)

Profile UPS customers and introduce NP series and IGBT(APC, Tripp Lite)

Profile Smartgrid customers and find out N/P complimentaryMOSFET usage (Itron, Landis & Gyr, GE Energy)

2004 2005 2006 2007 2008 2009 2010

MOSFET

IC

D8 (20V)

IP65 (16V)

Wire bonding, PB free

JET (30V)

IP75 (27V)

Clip bonding, Terminal Pb free, Halogen free

Notebook PCs V-core and non V-core

Server and desktop PCs non V-core (VTT, DDR, etc…)

Server and desktop PCs V-core

6x6 mm PKG

For VR12/IMVP7

1st Gen. PKG(Wire Bonding)

2nd Gen. PKG(Clip Bonding)

1st Gen. PKG(Wire Bonding)

8x8 mm PKG 2nd Gen. PKG

(Clip Bonding)

POL-SiP: Control IC and MOSFETsPOL-SiP: Control IC and MOSFETs

DrMOS: Driver IC and MOSFETsDrMOS: Driver IC and MOSFETs

POL all in one DevicePOL all in one Device

Package

Target Application

mass production Under study Developing

The World’s first DrMOS

in 2004

Higher Performance

Higher Performance

Light & Heavy LoadEfficiency up

8x8 mm PKG

Light & Heavy LoadEfficiency up

VCIN=12V

Intel Rev3.0/ High Voltage

Smaller Package Intel Rev3.0

6x6 mm PKG PWM=5V UP

Wide Input Range

BEAM (30V)

Technology

Products

R2J20601R2J20601R2J20604R2J20604

R2J20602R2J20602

R2J20651R2J20651

R2J20701R2J20701 R2J20755R2J20755R2J20702R2J20702

R2J2060xR2J2060x

R2J20751R2J20751

R2J20653AR2J20653A

R2J20605AR2J20605A

R2J20651AR2J20651AR2J20654R2J20654

R2J20652AR2J20652A

Renesas Integrated Power Device Roadmap

3-Chip in one packageDriver IC + Top MOS + Bottom MOS 50% smallerthan discrete solution Huge output current up to 40A (same as R2J20602NP) Pin compatible (DrMOS spec.)

FeaturesTarget Application Telecom/server Storage/graphic card Multi-Phase DC-DC converter

Functions Built-in SBD for boot-strapping Remote ON/OFF Capable of 5V PWM signal Thermal shut-down

QFN56QFN56 NEWNEWNEWNEW

Top MOSFET

8 x 8 x 0.8mmQFN 56pin

Drive

r

PW

M C

on

troller

(Mu

lti-ph

ase) D

river

Multi-Phase

Bottom MOSFETwith SBDwith SBD

Gate Driver

DrMOS (R2J20605ANP)

DrMOS: R2J20605ANP 8x8 Package

3-Chip in One Package

Features

Driver IC + Top MOS + Bottom MOS

Huge output current

50% smaller than discrete solution

up to 40A (same as R2J20602NP)Top MOSFET

8 x 8 x 0.8mmQFN 56pin

Target Application Telecom/Server

Storage/Graphic Card

Multi-Phase DC-DC converter

Remote ON/OFF

Built-in SBD for boot-strapping

Functions

Drive

r

PW

M

Co

ntro

ller(M

ulti-p

hase) D

river

Multi-Phase

Bottom MOSFET

with SBDwith SBD

Gate Driver

Pin Compatible (DrMOS spec.)

Capable of 5V PWM Signal

QFN56QFN56

NewNew

DrMOS: R2J20651NP/ANP 6x6 Package

6x6mm QFN-40pin = More Space SavingMore Space Saving

Area = 36 mm2

DrMOS 6x6

Area = 64 mm2

R2J20602NP 8x8

Space-saving

-- 4444%%

QFN-40pin 6x6mmQFN-56pin 8x8mm

6mm x 6mm

R2J20651NP

PWM Input

ThermalWarning

ThermalShutdown

Status

Sample MPNote

35AR2J20652ANP

16V

5V VCIN=12V version

27VR2J20653ANP Intel Rev3.0

Intel Rev3.0

R2J20651ANP

5V &3.3V

VinMax

IoutMax

Driversupply

5V

5V

130C

130C

115C 150C

NewNew

NewNew

5V,12V and 20V

QFN40QFN40

IGBT(Insulated Gate Bipolar Transistor)

IGBT: Definition

IGBT = Insulated Gate Bipolar Transistor Voltage controlled Bipolar Transistor

When to use MOSFET versus IGBT?

1 10 100 1000 Frequency (kHz)

IGBT ?? MOSFET

IGBT

MOSFET250V

1000V

Bre

akdo

wn

Vol

tage

Different IGBT’s for differen applications

Technology request Technology request from Applicationsfrom Applications

PDP TV setsPDP TV sets

Motor controlMotor control 　　

ＩＨＩＨ Cook topsCook tops Thin chip and trench gate IGBTThin chip and trench gate IGBTIGBT and Diode chip in 1 PackageIGBT and Diode chip in 1 Package

Planar IGBTPlanar IGBT

IGBTs for Home AppliancesIGBTs for Home Appliances

PFC circuitsPFC circuits

High current andHigh current and High speed switchingHigh speed switching

Lower Power LossLower Power LossHigh reliabilityHigh reliability

High luminanceHigh luminanceLower Power lossLower Power loss

Ultra High speedUltra High speed swtchingswtching

Our DesignOur Design

Thin chip and trench gate IGBTThin chip and trench gate IGBTfor Low VCE(sat)for Low VCE(sat)

IGBT and Diode chip in 1 PackageIGBT and Diode chip in 1 Package

Thin chip and trench gate IGBTThin chip and trench gate IGBTwith High Short circuit capabilitywith High Short circuit capabilityIGBT and Fast Recovery Diode IGBT and Fast Recovery Diode

in 1 Packagein 1 Package

Required Characteristics of IGBT Required Characteristics of IGBT for Major Applications for Major Applications

◎◎ : high-priority characteristics◎ : Priority characteristics○ : Requisite characteristics- : Non-focused characteristics

Active filter(Partial SW)

Active filter(Continuation

SW)

Currentresonance

type

Voltageresonance

type

○ ○ ◎◎ ◎ ◎ ◎

toff ○ ◎◎ ◎ ○ ○ ○

ton ‐ ‐ ‐ ‐ ‐ ‐

‐ ○ ○ ‐ ○ ◎

‐ ‐ ‐ ‐ ○ ◎◎

600V 600V 600V 900-1200V 600-900V 600-800V

for partial SWHigh speed SW

typeLow VCE(sat)

typeHigh Voilage type

Low VCE(sat)type

Highbreakdown

resistance type

Inverter use(Motor

Control)

High-speedSW

FRD

IH cooking heaterApplicationsPFC

(1kW and over)

Characteristics

Saturation voltage(VCE(sat))

Brake down voltage

Recommended IGBT

Short Circuit capability

Solar PowerGeneration

(UPS)

Recommended IGBT’s for Specific ApplicationsRecommended IGBT’s for Specific Applications

RJH60C9DPD ★ ◎ ○RJH60D1DPP ★ ◎ ○RJH60D1DPE ★ ◎ ○RJH60D2DPP ★ ◎ ○RJH60D2DPE ★ ◎ ○RJH60D3DPP ★ ◎ ○RJH60D3DPE ★ ◎ ○RJH60D0DPK ★ ◎ ○ ◎RJH60D5DPK ★ ◎ ○ ◎RJH60D6DPK ★ ◎ ○ ◎RJH60D7DPK ★ ◎ ○ ◎RJP60D0DPK ★ ◎ ◎RJP60D0DPM ★ ◎ ◎

Low VCE(sat) RJP6006DPK ○RJP6085DPN ◎RJP6085DPK ◎

RJH6085BDPK ★ ◎RJH6086BDPK ★ ◎RJH6087BDPK ★ ◎RJH6088BDPK ★ ◎RJH60F3DPK ★ ◎ ◎ ○ ◎RJH60F0DPK ★ ◎ ◎ ○ ◎RJH60F4DPK ★ ◎ ◎ ○ ◎

RJH60F5DPK ★ ◎ ◎ ○ ◎

RJH60F6DPK ★ ◎ ◎ ○ ◎

RJH60F7ADPK ★ ◎ ◎ ○ ◎RJH1BF7RDPK ★ ◎RJH1CF5RDPK ★ ◎RJH1CF6RDPK ★ ◎RJH1CF7RDPK ★ ◎

High speed SW andLow VCE(sat)

(Built in Diode)

High Voltage(Built in Diode)

IH Cook tops

ApplicationFeatures

ChopperInverter

(Full Bride)

Solar PowerGeneration,

ＵＰＳ

SMPS,PFC

（1kW above）Motor Control

CurrentResonance

Inverter(Full Bride)

High destructionCapability

Very High Speed SWtype

Very High Speed SWtype

(Built in Diode)

VoltageResonance

Active filter(Partial SW)

Active filter(Full SW)

High destructionCapability

(Built in Diode)

IGBT: Development Roadmap

2005 2006 2007 2008 2009 2011

G4

Hig

h p

erfo

rma

nce

& H

igh

effi

cien

cy

2012

30V

11th Gen.Next-Gen600V/1200V

G5600V

VGE=30VG5H

600V/1200V

Planar construction

Trench technology

Trench technology

High speedG4S

600V

G6HVGE=30V

2010

High Speed &Low Vce (sat) Type : RJH60FXX Series

High Short Circuit Capability Type :RJH60DXX Series

Optimum Design for Specific Applications

Optimum design of cell structure.

Thin wafer

1,100-1,200VG6H-RC

Reverse conducting

Trench technology

0

10

20

30

40

50

60

70

80

90

100

0 0.5 1 1.5 2 2.5 3

IGBT: New G6H Series vs G5 Series

Co

llect

or

curr

en

t I C

[A]

RJH60F5DPK(80A/600V)

(G6H series)

Tc = 25 ℃VGE = 15 V

GN6060V5DP(60A/600V) (G5 series)

Improvement 30%

600V

Collector to Emitter saturation voltage VCE(sat) [V]

IGBT: Renesas vs The Competition

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

0 200 400 600 800 1000 1200 1400 1600 1800Turn-off Loss Eoff（μJ)

VC

E(s

at)

(V)

RenesasG5 Process Perfomance

R 4068D

T 60J323

FC 20N60

I 50N60

(Inductive load,Tc=125℃,IC=40A,VCC=300V,VGE=15V,RG=5ohm)

G6H series

Company A

Company B

Company C

Company D

600V

IGBT: Application details necessary for part selection

Applications Induction Heating, i.e Cooktop

– What type of circuit? Current resonant or voltage resonant?– What is the load capacity (kW)?– What is the operating current?– What is the switching frequency?– What package is required?– What is the competitive parts and price (from customer)?

Others– What is the AC input voltage?– What is the load capacity (kW)?– What is the operating current?– What is the switching frequency?– Is a Fast Recovery Diode (FRD) required?– Is short circuit capability required?– What package is required?

Triac and Thyristor

Triac and Thyristor: Definitions and Facts

What is a Thyristor? A switching device that allows for unidirectional current flow Generally more expensive than Triacs; more robust Act as a “Circuit Breaker” in Power Supplies for Digital Circuits

– Inrush Current Protection for Various Applications Also suitable for use in Ignition Modules, though not Automotive

What is a Triac? A bi-directional electronic switch which can conduct current in

either direction when triggered Essentially two Thyristors combined in a single package Used in AC circuits because it allows for large power flows with

milliampere scale control currents Best for applications that require precise control of current flow

– Light Dimmer– Electric Fan– Variable Speed Power Tools– Heating Elements for various applications

Triac and Thyristor: Market Position, Relative Strengths

2009 Worldwide Market Share – Triac and Thyristor– ST Micro 24%– NXP 21%– Renesas 16%– On Semi 11%– Others

Renesas has highest market share for Triac in Japan Goal is to grow position in other markets, such as US ST Micro has an estimated 95% share in US

Huge product lineup, but weakness in reliability Currently having serious delivery issues Increasing production capacity for TO-220FL package to

capitalize on current situation Max junction temp 150degC, most others are at 125degC

Higher temp margin means our parts can reliably operate in more harsh environments

Diverse product lineup covering a wide array of applications Price-competitive, success in China Market

Triac and Thyristor: Major Customers by Application

Home Appliance Toshiba (Japan) Panasonic (Japan) LG (Korea) Samsung (Korea) Haier (China) Midea (China)

OA Equipment Canon (Japan) Fuji Xerox (Japan) LG (Korea)

Circuit Breaker Panasonic Mitsubishi Schneider

Inverter Lamp Mitsubishi Panasonic

Home Appliance GE Sensata Electrolux Whirlpool Mabe Emerson

Power Tool Black and Decker Milwaukee Electric Tool

Other Rockwell Toro (sprinkler systems) JCI (Home Automation) NCR GE Lighting

CURRENT BUSINESS - Worldwide TARGET BUSINESS - Americas

Triac and Thyristor: Applications

電動工具

Lamp

TriacsControl rectifier

Washing machine

Rice cooker

Toilet seat

Vacuum Cleaner

Camera (strobe)

Leakage detector

Control capacitor(LC resonance)

Heater MotorSolenoidValve

AC Control

Others

Printer, Copier FAX

LampDimmer

SSR

SMPS(Inrush current

Protection)

Inverter Lamp (Inrush current

Protection)

Fan heater(Ignitor)

Boat Jet ski （ Ignitor ）

Bike Regulator ）

Automatic Dish washer

Electric tool

Thyristors

Electric Fan

Washing MachineDryerElectric FanHair DryerDehumidifierVacuum CleanerRefrigeratorDishwasherRice CookerBlenderBread-baking MachineElectric PotVentilation FanToilet Seat

Renesas Triac & Thyristor is used in various applications as listed below. The blue bold text shows the applications where Renesas Triac & Thyristor is especially strong.

Gas RangeWater heater (boiler)Fan HeaterSmall engine (ex. Lawn mower)

Inverter LampLight Dimmer

SMPSMotor controlElectric toolCircuit Breaker (Leakage detector)

SSRStrobe (Camera)Regulator for motor bikeOthers

PrinterCopier

Home ApplianceHome Appliance

OA equipmentOA equipment IndustryIndustry

Igniter ApplicationIgniter Application

OtherOther

LightingLighting

Triac and Thyristor: Applications

Triac and Thyristor: Roadmap

‘02‘00

PlanarPlanar LB seriesLB series

600V600V(Tj=150 )℃(Tj=150 )℃

GeneralGeneral

PlanarPlanar LA seriesLA series600600 ～～ 1000V1000V(Tj=125 )℃(Tj=125 )℃

GeneralGeneral

PlanarPlanar LG seriesLG series600V600V ～～ 800V800V

(Tj=150 )℃(Tj=150 )℃

GeneralGeneral

PlanarPlanarHigh PowerHigh Power

400V400V ～～ 1500V1500V ～～ 30A30A(Tj=125/150 )℃(Tj=125/150 )℃

GeneralGeneral

PlanarPlanarLD seriesLD series

600V600V ～～ 700V700V(Tj=150 )℃(Tj=150 )℃

Low InrushLow Inrush

PlanarPlanar AA ｌｌ Ribbon Ribbon

600V600V ～～ 700V700V(Tj=150 )℃(Tj=150 )℃

GeneralGeneral

For low inrush current

High Voltage

/ High

Temperature

‘04 ‘06 ‘08 ‘10

High

Power

New type

Glass Glass Passivation Passivation (Tj=125 )℃(Tj=125 )℃

GeneralGeneral

High

Commutation

Planar Planar technologytechnology

(Tj=125 )℃(Tj=125 )℃

GeneralGeneral

High reliabilityguarantee 150℃

Triac

Thyristor

PlanarPlanar44 ～～ 16A16A

800V800V(Tj=150 )℃(Tj=150 )℃

High Commutation

High Commutation

Under Development

Planar Planar technologytechnology

(Tj=150 )℃(Tj=150 )℃

GeneralGeneral

guarantee 150℃

Under Development

PlanarPlanar600V600V ～～ 700V700V

～～ 20A20A(Tj=150 )℃(Tj=150 )℃

General &Low Inrush

General &Low Inrush

New package

TO-220FL

High commutation Triac

TO-220 package Triac,

=> TO-220FL

=> LG series (TO-220F)=> TO-220, TO-220S, TO-220F(2), TO-220FN

Small power & compact Triac

=> TO- 92, UPAK, DPAK(L)-(3), MP- 3A

If you need higher voltage and current => High Power Triac

If your system requires repetitive inrush current capability => Triac with AL ribbon

If your system doesn’t need high inrush current capability => LC/LD series

If you need more thermal margin or to use in hot environment

=> 150 Thyristor℃

110 , 125 Thyristor ℃ ℃

Including New Product

New Product ｓ

New Product

New Product ｓ

Triac and Thyristor: Products

Triac and Thyristor: Application details necessaryfor part selection

Application and Electrical Spec questions1. What kind of load is the Triac or Thyristor driving? Motor,

heater, or solenoid?2. What is the voltage of the AC line?3. What is the Operating Current?4. What is the inrush current? (if inductive load, as with a motor)5. What are the competitive parts and pricing (from customer)?

Package Questions1. Surface Mount or Lead Type?2. If Lead Type, is requirement for an Insulated or non-Insulated

package?

Triac/Thyristor: Call to Action

Take advantage of all cross opportunities Convert open opportunities to D-wins at identified Target

Accounts Identify potential new accounts from current MCU customer

pool Suggest caravan stops for Japan Engineering visit Contact Tak Taoyama (Sales) and Mark De Freitas (Marketing)

with any questions/requests, new opportunity information

Diode: W/W Market Share and Product Breakdown

Diode: Product Lineup by Device Type

Switching (SW)

Zener (ZN)

Schottky (SB)

Varicap (VC)

Band SW (BSW)

PIN (PIN)

Small signal rectification

Constant voltageESD protection

DetectorCurrent Stopper

TV tuner, AFC, VCO

RF SW Diode

ANT-SW

GeneralPurpose

Small signal

PW

PW(over Io=0.5A)

HighFrequency

Small signal (under Io=0.5A)

Rectifier Current Stopper

ESD protection

Diode: Mobile Application Block Diagram

BasabandSignal

processing

VoiceProcessing

Memory

External I/O

AC ChargerAC Adopter

PowerManagementPower Supply

TV/FM Tuner Unit

DisplayLC

D

Driv

er

DuplexerAnt-SW

MicroComputer

MicroComputer

USB2.0Terminal

Keyboard1 2 34 5 67 8 9

TX Stage

RXVCO

TXVCO

PLL

RX stage

RF IC

Detector

Tuning

TuningRF SW

RF Detector

DCInput

BatteryPower management SW

H.P.A

LNA

ANT-SWPIN Diodes for SPDT,DPDTMP6:RKP200,204KPMFP12:RKP411KSMP6-8,MP6-12

Tunable AntennaVariCap Diodes for tunable antenna

RKV652KL, 653KLRKV654KL, 655KL

Rectifier diodes of Connection Terminal Schottky Diodes

Back Current StopperFor BatterySchottky Diodesfor Circuit Protection

Protection for external signal lineZener Diodes for ESD surge Absorption

RKZ7.5TKL/KPRKZ6.8Z4KTRKZ***KL/KP series

Protection for LCD driversSchottky Diodesfor Latch-Up Phenomena

HSL226, HRL0103CRKD703K*, RKD704KP

SMPS : Switch-Mode Power Supply

HRC0203C, RKD703K*

Diode: Sawn Wafer (Die) for Surge Absorption - LED apps

High-intensity white/blue/green LED using a sapphire substrate

are low ESD surge level

# Set makers using LED lamp adopt a package enclosing product for external.# LED lamp makers built an bare chip in LED package

Some high-intensity LED chips are low surge level. Therefore they can have a problem for high reliability use

Problem in high-intensity LED

Zener diode absorb inrushing ESD surge from outside, and protect the destruction of LED chips

Solution

(Vz 6.0~8.0V)

ZN

LED

ZN

LED

LED protection zener

(Vz 8.0~12V)

LED

Bidirectional zener(Vz 6.0~9.0V)

XLamp® LEDsModel : XREWHT-L1-0000-00C02 Zener Diode chip Zener Diode chip V ｚ－ Iz characteristiccharacteristic

1.E-12

1.E-11

1.E-10

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

0 2 4 6 8

Vz[V]

Iz[A

]

VF

VR

1.E-12

1.E-11

1.E-10

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

0 2 4 6 8 10

Vz(V)

IA

)ｚ（

Renesas RKZ7.5TWMW0 V ｚ－ Iz Characteristics

Comparison of Bidirectional Zener DiodeComparison of Bidirectional Zener Diode

Diode: Call to Action

Include Diode for Mobile Apps target customers, such as RIM, Apple, Motorola

Add LED protection business for major manufacturers such as Cree

Sales Resources

Discrete, Power, & Standard Product Offline & Online AE and Sales Resources

am.renesas.com:1) eCommerce Tree is enabled for low voltage MOSFETs

• This includes purchasing (through Digikey) and Sampling function• We will activate for at least IGBT and Triac as well.

2) Virtual Power Lab “Renesas VP”• Buck converter design tool including auto FET selection, Spice Models, Dynamic Data sheets.

3) Status List by Product Line – Comprehensive parts list for Transistor (MOSFET, IGBT, Triac) and Diode.

4) Discrete Products Catalog. 5) Customer Presentations are available online for each product family.6) Parametric search7) Cross reference tool

RSSI1) Sales Training Presentations for each product category.

www.renesas.com: (global site)1) Many application examples showing standard product usage with MCU’s. Example: Inverter

http://www.renesas.com/

http://www.renesas.com/

Discrete, Power, & Standard Product Offline & Online AE and Sales Resources

OFFLINE:1) Santa Clara Sample Warehouse for Low Voltage MOSFET (Contact: [email protected])2) “JIMSIM” Advanced Buck Converter Simulation Tool (Contact: [email protected])

• Jim can rapidly and accurately compare FETs from various competitors under a wide range of operating conditions

3) Version 1 EZ-Like pdf for promotion products• Available now for Low Voltage MOSFET.• Coming soon for MV MOSFET, IGBT, and Triac.• Low volume pricing still under analysis to make compete these upcoming EZ lists.

OTHER: OTHER: Tak Taoyama ([email protected]) is managing the N. American Sales Promotions for Triacs,

Thyristors, and IGBTs.

An Apps Engineer from Renesas High Power team in Takasaki Japan will visit us in late July or August for a promotional caravan, if you have potential Triac or IGBT opportunities please contact Tak to get on the caravan schedule.

Marketing to productize DigiKey for samples and small orders.

Upcoming Training via WebEx.1. Power MOSFET Basics Aug-Sep2. Renesas VP and “JimSim” Simulation Tools Sep3. Sales Tools Update Sep-Oct

mailto:[email protected]



Appendix

MOSFET Promotion Products

MOSFET: Low Voltage BEAM Series

MOSFET: Low Voltage JET Series

MOSFET: Low Voltage JET Dual + BEAM 3x3

MOSFET: Medium Voltage JET and D8 Series

ID(DC)

Type N:Nch P:Pch

VDSS

Package code C: TO-220 (MP-25) D: TO-262 (MP-25-S) E: TO-263 (MP-25ZJ) H: TO-251 (MP-3) K: TO-263 (MP-25ZK) N: TO-262 (MP-25SK) M: TO-220 (MP-25K) P: TO-263 (MP-25ZP) S: TO-252 (MP-3ZK) T: TO-263-7pin (MP-25ZT) V: TO-252 (MP-3ZP) Y: 8pin HSON Z: Bare die

Process E: UMOS 2 F: UMOS 3 G: UMOS 4 J: UMOS SJ1

Gate driving L: Logic level, Protection diode built in H: Non-logic, Protection diode built in D: Logic level, Protection diode less U: Non-logic level, Protection diode less

NP 180 N 04 T U G

NP series product naming

NEC Power

Super Junction 1 Series

Realize W/W Top class RRealize W/W Top class RDS(on)DS(on) xQ xQ ｇｇ　　 Lower Drive powerLower Drive power

Much faster switchingMuch faster switching

Target applicationTarget applicationHigh power ECU, such as EPS, ISGHigh power ECU, such as EPS, ISG

RDS(on) x Qg improved 42% RDS(on) x Qg improved 42%

4 products released & 5 products under development4 products released & 5 products under development

(mo

hm･n

C) 468468

1.8m1.8mΩΩ150nC150nC


270270

(NECEL)(NECEL)SJSJ11

NP110N04PUJNP110N04PUJ

(NECEL)(NECEL)UMOS4UMOS4

NP110N04PUGNP110N04PUG


320320

((CompetitorCompetitor））

-42%-16%

P/N VDSS VGSS ID(DC)Ron(max)@VGS=10V

Qg Package/Status

NP110N04PUJ 40V 20V 110A 1. 8mohm 150nC

TO-263

In production




NP180N04TUJ * 40V 20V 180A 1. 5mohm 150nC

TO-263-7pin

DS: OK MP: July/'10




NP100N04NUJ * 40V 20V 100A 3. 0mohm 107nCTO-262

DS: June/'10 MP: Sep/'10

*Under development

(RENESAS)SJ1

(RENESAS)UMOS4

Next Gen. Super Junction 2 Series

RonQg was reduced by 45% compared with UMOS4RRononQQgg was reduced by was reduced by 4545% % compared with UMOS4compared with UMOS4(m

ohm･n

C) 312312



180

SJSJ11UMOS4UMOS4


171

SJ2SJ2

-42%-45%

TO-263-7pin(40V) Comparison

Ron dedicated Process

Ron dedicated Process

Industry leading level RIndustry leading level RDS(on)DS(on) xQ xQ ｇｇ Performance Performance

Reduction of On LossReduction of On Loss

Reduction of Gate Drive Power and Switching Loss by Faster SwitchingReduction of Gate Drive Power and Switching Loss by Faster Switching Suitable for High Current Drive Application such as EPS, ISGSuitable for High Current Drive Application such as EPS, ISG

Product name

(Development code)Package VDSS ID(DC)

PT

(Tc=25 )℃Ron(max)

@VGS=10VQG Ciss

NP160N04TU_*

(VA0072TU04)TO-263-7p 40V 160A 250W 1.8mohm 120nC 8300pF

NP***N04PU_*

(VA0072PU04)TO-263 40V 110A 250W 2.0mohm 120nC 8300pF

NP100N04PU_*

(VA0071PU04)TO-263 40V 100A 176W 2.7mohm 80nC 5000pF

DS : Sep 2010 ES : Nov 2010 CS : March 2011

TO-252 High ID-rating Series

P/N VDSS VGSS ID(DC) RDS(on)@VGS=10V

Ciss

NP90N03VUG/VHG*/VLG* 30V 20V 90A 3.2mohm 5000pF

NP90N04VUG/VDG/VLG 40V 20V 90A 4.0mohm 5000pF

NP90N055VUG/VDG 55V 20V 90A 6.0mohm 5000pF

NP90N06VLG 60V 20V 90A 7.8mohm 5000pF

7 products of High ID-rating Series released !7 products of High ID-rating Series released ! Realize ID=90A rated in TO-252 Realize ID=90A rated in TO-252 Enable to reduce the sizeEnable to reduce the size Target applicationTarget application

EPS, Wiper, Slide Door, Transmission EPS, Wiper, Slide Door, Transmission

ID=90AID=90A （（ MAX.)MAX.)SizeSize ：： 64mm64mm22

ID=88A(MAX.)ID=88A(MAX.)SizeSize ：：153mm153mm22

TO263 Ad.TO252Ad.TO252

Reduced Reduced 60%60%

Application example :H-Bridge Motor driver

Vbb=12V(TYP.)

MPU Pre-driver MMPU Pre-driver M

High current capability by 400um Al wire * 3pcs

*Under development DS: done, MP:July/'10

New

8pin HSON Series

New package enables to reduce the sizeNew package enables to reduce the size

31mm31mm22

Conventional PKGConventional PKGTO-252TO-252

Conventional PKGConventional PKGTO-252TO-252

New PKGNew PKG8pin HSON8pin HSON

New PKGNew PKG8pin HSON8pin HSON

Reduced Reduced 51%51%

64mm64mm22

ElectricalThrottle

O2 heater

InjectorSW

controllerDC/DCCONVERTER

Injector drive

InjectorSW

controllerDC/DCCONVERTER

Injector drive

Application example ( EMS)

P/N

NP23N06

YDG

NP33N06

YDG

NP35N04

YUG

NP35N04

YLG*

NP74N04

YUG

NP75N04

YUG

NP50P03

YDG

NP75P03

YDG

NP75P04

YLG*

Type Nch(U4) Nch(U4) Nch(U4) Nch(U4) Nch(U4) Nch(U4) Pch(U4) Pch(U4) Pch(U4)

Gate drive Logic Logic non LogicLogic +GS diode

non Logic non Logic Logic LogicLogic +

GS diode

VDDS 60V 60V 40V 40V 40V 40V -30V -30V -40V

ID(DC) 23A 33A 35A 35A 75A 75A -50A -75A -75A

Ronmax@10V

27mΩ 14mΩ 10mΩ 9.5mΩ 6mΩ 5.1mΩ 9mΩ 6.2mΩ 10.7mΩ

Ciss typ 1250pF 2600pF 1900pF 1900pF 3500pF 4300pF 2100pF 3100pF 3200pF

*Under development DS: done, MP:July/'10

100V NP Series Under development

P/N Package VDSS VGSS ID(DC) RDS(on)@VGS=10V

Ciss Status

NP70N10KUF TO-263 100V 20V 70A 20mohm 2500pF MP

NP28N10SDE TO-252 100V 20V 28A 33mohm 3500pF July/'10

NP36N10SDE TO-252 100V 20V 36A 52mohm 2200pF July/'10

Increasing 100V PoMOSFET line-upIncreasing 100V PoMOSFET line-up Realize VDSS=100V rated in TO-252 Realize VDSS=100V rated in TO-252 Target applicationTarget application

Direct Injection, LED controlDirect Injection, LED control

MicroProcessor

Voltage regulator

12V(TYP)

Controller Injector driver

Electrical Throttle

O2 sensor

Boost Converter

NP70N10,NP36N10

NP36N10,NP28N10

NP55N055NP52N06

R

LEDmodule

L

LEDcontroller

12V( typ)

BoostConverter

NP36N10,NP28N10Application example (Engine control) Application example (LED)

Rds(ON) 30V 40V 55V 60V

~20mΩ NP52N055SUG(14m) NP52N06SLG(19m)

~10mΩNP55N055SUG(10m)NP55N055SDG(9.5m)NP60N055KUG(9.4m)

~7mΩ

NP55N04SUG(6.5m)NP60N04MUG(6.3m)NP60N04KUG(6.1m)NP70N04MUG(5.0m)

NP82N055PUG(5.2m)NP90N055VUG(6.0m)

NP82N06PDG(6.7m)NP82N06PLG(6.7m)

~5mΩ

NP90N03VUG(3.2m)NP60N03SUG(3.8m)NP60N03KUG(4.8m)NP55N03SUG(4.9m)

NP90N04VUG(4.0m)NP82N04PUG(3.5m)NP82N04PDG(3.5m)NP88N04NUG(3.4m)

NP88N055KUG(3.9m)

~3mΩNP82N03PUG(2.8m)NP88N03KUG(2.4m)NP88N03KDG(2.4m)

NP90N04MUG(3.0m)NP88N04KUG(2.8m)NP109N04PUG(2.3m)

NP110N055PUG(2.8m)

~2mΩ NP110N03PUG(1.5m)

NP160N04TUG(2m)NP160N04TDG(2m)

NP110N04PUG(1.8m)NP110N04PDG(1.8m)NP161N04TUG(1.8m)NP180N04TUG(1.5m)NEW

NEW

NEW NEWNEW

NP series PoMOSFET (UMOS4,Nch)

VDSS(V)

G to SDi

TO-220(MP-25K)

TO-262(MP-25SK)

TO-263(MP-25ZP)

TO-252(MP-3ZP)

40V

built in

NP80N04MLG (4.8m)

NP82N04MLG (4.2m)

NP80N04NLG (4.8m)

NP82N04NLG (4.2m)

NP80N04PLG (4.5m)NP90N04VLG

(4.0m)

nothing

NP80N04MDG (4.8m)

NP82N04MDG (4.2m)

NP82N04MUG (4.2m)

NP80N04NUG (4.8m)

NP80N04NDG (4.8m)

NP82N04NUG (4.2m)

NP82N04NDG (4.2m)

NP80N04PUG (4.5m)

NP80N04PDG (4.5m)

NP90N04VDG (4.0m)

55V

built in - - - -

nothing

NP80N055MDG (7.3m)

NP82N055MUG (6.0m)

NP80N055NDG (7.3m)

NP82N055NUG (6.0m)

NP80N055PDG (7.0m)

NP90N055VDG (6.0m)

60Vbuilt in

NP80N06MLG (10m)NP82N06MLG

(7.4m)

NP80N06NLG (10m)NP82N06NLG

(7.4m)NP80N06PLG (9.7m)

NP90N06VLG (7.8m)

nothing - - - -

RonMax(VGS=10V)

NP series PoMOSFET (UMOS4,Nch)

RDS(on) 40V(TO-252) 40V(TO-263) 60V(TO-252) 60V(TO-263)

～100mΩ NP15P06SLG(75m)

～50mΩ NP15P04SLG(40m) NP20P06SLG(48m)

～30mΩ NP20P04SLG(25m) NP36P04KDG(17m) NP36P06SLG(30m) NP36P06KDG(29.5m)

NP36P04SDG(17m) NP50P06SDG(16.5m) NP50P06KDG(17m)

NP50P04SDG(9.6m)

～10mΩ NP50P04KDG(10m) NP83P06PDG(8.8m)

NP82P04PLF(8m)

～7mΩ NP83P04PDG(5.3m) NP100P06PLG(6m)

NP100P06PDG(6m)

～5mΩ NP100P04PLG(3.7m)

NP100P04PDG(3.5m)

NP series PoMOSFET (UMOS4,Pch)

NP Series UMOS4, Nch TO-263 (1/2)

Surface Mount Type (TO-263) Nch UMOS4

Part no. PackageVDSS

[V]ID(DC)

[A]PT[W]

RDS(on)[mΩ]

VGS=10V*VGS=4.5V**VGS=5.0V

Ciss[pF]

Qg[nC] Status

NP110N03PUG adv TO-263 110 288 1.5 16400 253 MP

NP88N03KUG TO-263 88 200 2.4 9600 165 MP

NP88N03KDG TO-263 88 200 2.4 / 3.9* 9000 165 MP

NP82N03PUG adv TO-263 82 143 2.8 6050 106 MP

NP60N03KUG TO-263 60 88 4.8 3500 62 MP

NP180N04TUG TO-263-7pin 180 288 1.5 16300 252 MP

NP161N04TUG TO-263-7pin 160 250 1.8 13500 230 MP

NP110N04PUG adv TO-263 110 288 1.8 17100 260 MP

NP110N04PDG adv TO-263 110 288 1.8 / 3.2* 14500 230 MP

NP109N04PUG adv TO-263 110 220 2.3 10500 180 MP

NP160N04TDG TO-263-7pin 160 220 2 / 5.4* 10500 180 MP

NP160N04TUG TO-263-7pin 160 220 2 10500 178 MP

NP88N04KUG TO-263 88 200 2.9 10000 165 MP

NP82N04PUG adv TO-263 82 143 3.5 6500 106 MP

NP82N04PDG adv TO-263 82 143 3.5 / 8.0* 6000 100 MP

NP80N04PDG adv TO-263 80 115 4.5 / 8.7* 4900 90 MP

NP80N04PUG adv TO-263 80 115 4.5 4900 90 MP

NP80N04PLG adv TO-263 80 115 4.5 / 8.7* 4900 90 MP

NP60N04KUG TO-263 60 88 6.1 3400 63 MP

30

40

NEW

NEW

NP Series UMOS4, Nch TO-263 (2/2)

Surface Mount Type (TO-263) Nch UMOS4

Part no. PackageVDSS

[V]ID(DC)

[A]PT[W]

RDS(on)[mΩ]

VGS=10V*VGS=4.5V**VGS=5.0V

Ciss[pF]

Qg[nC] Status

NP110N055PUG adv TO-263 110 288 2.4 17100 251 MP

NP88N055KUG TO-263 88 200 3.9 9600 166 MP

NP82N055PUG adv TO-263 82 143 5.2 6400 106 MP

NP80N055PDG adv TO-263 80 115 7 / 10.9 4900 93 MP

NP60N055KUG TO-263 60 88 9.4 3700 61 MPNP82N06PDG adv TO-263 82 143 6.7 / 8.5** 5700 106 MPNP82N06PLG adv TO-263 82 143 6.7 / 8.5** 5700 106 MPNP80N06PLG adv TO-263 80 115 9.7 / 13 5000 95 MP

60

NEW

NEW

Through Hole Type (TO-220/262) Nch UMOS4

Part no. Package VDSS[V] ID(DC[A] PT[W]

RDS(on)[mΩ]

VGS=10V*VGS=4.5V**VGS=5.0V Ciss[pF] Qg Status

NP90N04MUG TO-220 90 217 3.0 11200 182 MP

NP88N04NUG TO-262 88 200 3.4 9510 171 MP

NP82N04MUG TO-220 82 143 4.2 6500 106 MP

NP82N04MDG TO-220 82 143 4.2 / 8.5* 6000 100 MP

NP82N04MLG TO-220 82 143 4.2 / 8.5* 6000 100 MP

NP82N04NUG TO-262 82 143 4.2 6500 106 MP

NP82N04NDG TO-262 82 143 4.2 / 8.5* 6000 100 MP

NP82N04NLG TO-262 82 143 4.2 / 8.5* 6000 100 MP

NP80N04MDG TO-220 80 115 4.8 / 9.0* 4900 90 MP

NP80N04MLG TO-220 80 115 4.8 / 9.0* 4900 90 MP

NP80N04NUG TO-262 80 115 4.8 4900 90 MP

NP80N04NDG TO-262 80 115 4.8 / 9.0* 4900 90 MP

NP80N04NLG TO-262 80 115 4.8 / 9.0* 4900 90 MP

NP70N04MUG TO-220 70 115 5.0 4900 90 MP

NP60N04MUG TO-220 60 88 6.3 3200 60 MP

40

NEW

NP Series UMOS4, Nch TO-220/262 (1/2)

NP Series UMOS4, Nch TO-220/262 (2/2)

Through Hole Type (TO-220/262) Nch UMOS4


RDS(on)[mΩ]

VGS=10V*VGS=4.5V**VGS=5.0V Ciss[pF] Qg Status

NP82N055MUG TO-220 82 143 6.0 6400 105 MP

NP82N055NUG TO-262 82 143 6.0 6400 105 MP

NP80N055MDG TO-220 80 115 7.3 / 11.2* 4900 93 MP

NP80N055NDG TO-262 80 115 7.3 / 11.2* 4900 93 MP

NP82N06MLG TO-220 82 143 7.4 / 9.7* 5700 106 MP

NP82N06NLG TO-262 82 143 7.4 / 9.7* 5700 106 MP

NP80N06MLG TO-220 80 115 10 / 13* 5000 95 MP

NP80N06NLG TO-262 80 115 10 / 13* 5000 95 MP

55

60

NEW

Surface Mount Type(TO-252) Nch UMOS4


RDS(on)[mΩ]

VGS=10V*VGS=4.5V Ciss[pF] Qg Status

NP90N03VUG Ad.TO-252 90 105 3.2 5000 90 MP

NP60N03SUG TO-252 60 105 3.8 5000 90 MP

NP55N03SUG TO-252 55 77 5 3500 62 MP

NP90N04VUG Ad.TO-252 90 105 4 5000 90 MP

NP90N04VDG Ad.TO-252 90 105 4 / 8.6* 4900 90 MP

NP90N04VLG Ad.TO-252 90 105 4 / 8.6* 4900 90 MP

NP55N04SUG TO-252 55 77 6.5 3400 63 MP

NP90N055VUG Ad.TO-252 90 105 6 5000 90 MP

NP90N055VDG Ad.TO-252 90 105 6 / 10.5* 4900 90 MP

NP55N055SUG TO-252 55 77 10 3500 60 MP

NP55N055SDG TO-252 55 77 9.5 / 12* 3200 64 MP

NP52N055SUG TO-252 52 56 14 2100 38 MP

NP90N06VLG TO-252 90 105 7.8 / 12.5* 5000 95 MP

NP52N06SLG TO-252 52 56 17.5 / 25* 2100 39 MP

55

30

40

60

NEW

NEW

NEW

NEW

NP Series UMOS4, Nch TO-252

Part no. Process Package VDSS[V] ID(DC[A] PT[W]

RDS(on)[mΩ]VGS=10V

*VGS=4.5VCiss[pF]VDS=25V Qg[nC] Status

NP100P04PLG -100 200 3.7/5.1* 15100 320 MP

NP100P04PDG -100 200 3.5/5.1* 15100 320 MP

NP83P04PDG -83 150 5.3/8* 9820 200 MP

NP50P04KDG -50 90 10/15* 5100 100 MP

NP36P04KDG -36 56 17/23.5* 2800 55 MP

NP100P06PLG -100 200 6/7.8* 15000 300 MP

NP100P06PDG -100 200 6/7.8* 15000 300 MP

NP83P06PDG -83 150 8.8/12* 10100 190 MP

NP50P06KDG -50 90 17/23* 5000 95 MP

NP36P06KDG -36 56 29.5/37.5* 3100 54 MP

UMOS4

adv TO-263

-60

-40

adv TO-263

TO-263

TO-263

Surface Mount Type (TO-263) Pch UMOS4

NP Series UMOS4, Pch TO-263

Surface Mount Type (TO-252) Pch UMOS4

Part no. Process Package VDSS[V] ID(DC[A] PT[W]

RDS(on)[mΩ]VGS=10V

*VGS=4.5VCiss[pF]VDS=25V Qg[nC] Status

NP36P06SLG -60 -36 56 30/40* 3200 52 MP

NP50P04SDG -50 84 9.6/15* 5100 100 MP

NP36P04SDG -36 56 17/23.5* 2800 55 MP

NP20P04SLG -20 38 25/38* 1650 34 MP

NP15P04SLG -15 30 40/60* 1100 23 MP

NP50P06SDG -50 84 16.5/23* 5000 100 MP

NP20P06SLG -20 38 48/64* 1650 34 MP

NP15P06SLG -15 30 70/95* 1100 23 MP

UMOS4 TO-252

-40

-60

NP Series UMOS4, Pch TO-252

IGBT Promotion Products

IGBT: Features and Applications by Product Type

G6H Ultra Low VCE(sat) Series 600V IGBT Features

– Ultra Low Collector to Emitter Saturation Voltage– Built-in Fast Recovery Diode (FRD) in Single Package– High-Speed Switching

Applications– Induction Heating (IH) Cooktop– Current Resonance, Half Bridge– Soft Switching Applications

New Products

3Q/’10OKTO-3PYES300V30A95ns15V45A1.35V45A85A600VRJH60F6DPK

OKOKTO-3PYES300V30A80ns15V30A1.40V30A60A600VRJH60F4DPK

Tc=100℃Tc=25℃

25A

40A

50A

MPWS

OK

OK

OK

Status

OKTO-3PYES300V30A95ns15V50A1.35V90A600VRJH60F7ADPK

OKTO-3PYES300V30A80ns15V40A1.37V80A600VRJH60F5DPK


PKG

IC VCEIC VGE Typ.Typ.

tf （Resistance Load）

FRD

VCE(sat)ICVCEP/N

3Q/’10OKTO-3PYES300V30A95ns15V45A1.35V45A85A600VRJH60F6DPK

OKOKTO-3PYES300V30A80ns15V30A1.40V30A60A600VRJH60F4DPK

Tc=100℃Tc=25℃

25A

40A

50A

MPWS

OK

OK

OK

Status

OKTO-3PYES300V30A95ns15V50A1.35V90A600VRJH60F7ADPK



PKG

IC VCEIC VGE Typ.Typ.

tf （Resistance Load）

FRD

VCE(sat)ICVCEP/N

IGBT: Features and Applications by Product Type

G6H Reverse-Conducting 1,000-1200V IGBT Features

– Single-chip IGBT with Integrated Diode– Low Collector to Emitter Saturation Voltage– High-Speed Switching

Applications– Single Transistor Type Voltage Resonance Circuit– Induction Heating (IH) Cooktop– Soft Switching Applications

New Products (Target Spec)

4Q/’102Q/’10TO-3P10ATBDYES15V25A(1.70V)(25A)(50A)1200VRJH1CF5RDPK

4Q/’102Q/’10TO-3P10A2.1YES15V30A(1.65V)(30A)(60A)1200VRJH1CF6RDPK

YES

YES

YES

Diode

Body

4Q/’102Q/’10TO-3P10ATBD15V60A(2.00V)(30A)(60A)1100VRJH1BF7RDPK

(20A)

(35A)

(Tc=100℃)

IC

MPWS

2Q/’10

2Q/’10

Status

4Q/’10TO-3P10A2.115V35A(1.65V)(70A)1200VRJH1CF7RDPK


PKG

IFIC VGE Typ.Typ.

VFVCE(sat)IC

(Tc=25℃)

VCEP/N

4Q/’102Q/’10TO-3P10ATBDYES15V25A(1.70V)(25A)(50A)1200VRJH1CF5RDPK

4Q/’102Q/’10TO-3P10A2.1YES15V30A(1.65V)(30A)(60A)1200VRJH1CF6RDPK

YES

YES

YES

Diode

Body

4Q/’102Q/’10TO-3P10ATBD15V60A(2.00V)(30A)(60A)1100VRJH1BF7RDPK

(20A)

(35A)

(Tc=100℃)

IC

MPWS

2Q/’10

2Q/’10

Status



PKG

IFIC VGE Typ.Typ.

VFVCE(sat)IC

(Tc=25℃)

VCEP/N

Under development

Improved Tsc series 600V-IGBT(Non FRD)

TC=25℃

1. Features1. Features ・ Short circuit withstand time (3μs typ.) ・ Low Collector to Emitter saturation Voltage VCE(sat)・ Trench gate and thin wafer technology(G6H series) ・ High speed switching

2. Applications2. Applications ・ Inverter applications (Chopper type inverter : 1 transistor method)

3. New products plan3. New products plan

Note) The development plan of this series may be changed without notice.

P/N VCE IC VCE(sat)tf 　（ Resistance

Load ） FRD

PKG Status

Tc=25℃

Tc=100℃

Typ. IC VGETyp. IC VCE

WS MP

RJP60D1DPN 600V 16A 8A 1.6A 8A 15V 100ns 8A 300V NO TO-220AB OK 3Q/’10

RJP60D3DPK-M0 600V 30A 15A 1.6V 15A 15V 100ns 15A 300V NO TO-3PSG OK 3Q/’10

RJP60D0DPM 600V 40A 20A 1.6V 20A 15V 100ns 20A 300V NO TO-3PFM OK OK

RJP60D0DPK 600V 40A 20A 1.6V 20A 15V 100ns 20A 300V NO TO-3P OK OK

TO-3P/TO-3PSGTO-3PFMTO-220AB


Improved Tsc series 600V-IGBT1. Features1. Features ・ Short circuit withstand time (3μs typ.) ・ Low Collector to Emitter saturation Voltage VCE(sat) ・ Built in Fast Recovery Diode (100ns typ.) in 1 PKG. ・ Trench gate and thin wafer technology(G6H series) ・ High speed switching

2. Applications2. Applications ・ Inverter applications

P/N VCE IC VCE(sat)tf 　（ Resistance Loa

d ） FRD

PKG Status

Tc=25℃

Tc=100℃

Typ. IC VGETyp. IC VCE

WS MP

RJH60C9DPD 600V 10A 5A 1.9V 5A 15V 250ns 5A 300V YES MP-3A OK 3Q/10

RJH60D1DPP-M0 600V 16A 8A 1.8V 8A 15V 100ns 8A 300V YES TO-220FL OK 3Q/10

RJH60D1DPE 600V 16A 8A 1.8V 8A 15V 100ns 8A 300V YES LDPAK(S) OK 3Q/10





RJH60D0DPK 600V 40A 20A 1.6V 20A 15V 100ns 20A 300V YES TO-3P OK 3Q/10



RJH60D7DPK 600V 100A 50A 1.6V 50A 15V 115ns 50A 300V YES TO-3P OK OK

TO-3PTO-220FLLDPAK(S)

TC=25℃

MP-3A


High speed switching IGBT series

Part number VCE IC VCE(sat)tf

Typ. FRD

PKG Status

Typ. IC VGEWS MP

RJP6085DPN 600V 40A 1.6V 8A 15V 40ns - TO-220AB OK OK

RJP6085DPK 600V 40A 1.6V 10A 15V 40ns - TO-3P OK OK

RJH6085BDPK 600V 40A 1.6V 10A 15V 40ns YES TO-3P OK OK




TC=25℃

TO-3PFMTO-220AB TO-3P

1. Features1. Features ・ High speed switching ( 40-60ns typ.) ・ Low Collector to Emitter saturation Voltage VCE(sat) ・ Built in Fast Recovery Diode in 1 PKG (RJH series).

2. Applications2. Applications ・ PFC circuit

3. Line ups3. Line ups

Naming Rule for IGBT/Power MOSFET

Triac and Thyristor Promotion Products

High Commutation Triac

Spec. of commutation characteristics16A / 800V

Commutation characteristics at Tj=125 ℃

Under Under Development

Development

Other advantages

1. Lower leakage current

2. High reliability

3. Planar technology 4. Insulated Package available

Major target application

Vacuum Cleaner

Washer

0.1

1

10

100

0 20

(di/dt)c A/ms

(dV

/dt)

c

V/u

s

Target15A/ms(IGT

50mA)

Target9A/ms(IGT 35mA)

Competitor'sspec.

Specification:-VDRM: 800V- IGT: 35mA, 50mA (for 10, 12, 16A) 10mA, 35mA (for 4A)- Tj: 150 ℃

Package

TO-220,Non insulated type

TO-220F, TO-220FLInsulated type

MP-3A

Lineup:Current Part number IGT Commutation Status Package

/ Voltage (mA) (di/dt)c (A/ms) ES PP

4A / BCR4AS-16LH-1 10 2 at 10V/us available 3Q / 2010 MP-3A

800V BCR4AS-16LH 35 3.0

BCR4CM-16LH-1 10 2 at 10V/us available 3Q / 2010 TO-220

BCR4CM-16LH 35 3.0

10A / 800V BCR10CM-16LH-1 35 6.0 available 2Q / 2010 TO-220

BCR10CM-16LH 50 10.0

BCR10LM-16LH-1 35 6.0 May / 2010 2Q / 2010 TO-220FL

BCR10LM-16LH 50 10.0

12A / 800V BCR12CM-16LH-1 35 7.0 available 2Q / 2010 TO-220

BCR12CM-16LH 50 13.0

BCR12LM-16LH-1 35 7.0 May / 2010 2Q / 2010 TO-220FL

BCR12LM-16LH 50 13.0

16A / 800V BCR16CM-16LH-1 35 9.0 Available 2Q / 2010 TO-220

BCR16CM-16LH 50 15.0

BCR16LM-16LH-1 35 9.0 June / 2010 3Q / 2010 TO-220FL

BCR16LM-16LH 50 15.0

BCR16PM-16LH-1 35 9.0 available 2Q / 2010 TO-220F

BCR16PM-16LH 50 15.0

High Commutation Triac

Application example　　 Motor control, Heater control such as Washing machine, Vacuum cleaner, etc… Features

1) High Reliability ： Planar technology 2) Isolated Package ： TO-220 Full mold, Viso = 1800 V (UL recognized) 3) High Temp. ： 150 guarantee℃ 4) Lead Forming is available

Triac with new package (General Purpose)

Lineup

New frame TO-220FL

New Product

Part No. VDRM IT(RMS) ITSM IGT(max) Status Note

(V) (A) (A) (mA) ES MP

BCR3LM-12LB 3 30 20 OK June/’10

BCR3LM-12RB 3 30 15 OK

BCR5LM-12LB 5 50 20 OK

BCR5LM-12RB 5 50 15 OK

BCR8LM-12LB 600 8 80 30 OK ---

BCR10LM-12LB 10 100 30 OK

BCR12LM-12LB 12 120 30 OK

BCR16LM-12LB 16 160 30 OK

BCR3LM-14LB 3 30 30 OK June/’10

BCR5LM-14LB 5 50 30 OK VDRM=800V

BCR8LM-14LB 700 8 80 30 OK Available

BCR12LM-14LB 12 120 30 OK (@Tj=125 )℃BCR16LM-14LB 16 160 30 OK

Application example　　 Motor control, Heater control such as Washing machine, Vacuum cleaner, Rice cooker etc…

Features 1) High Reliability ： Planar technology 2) Isolated Package ： TO-220 Full mold (UL recognized Viso = 2000 V) 3) High Temp. ： 150 guarantee℃ 4) Lead Forming is available

LG series Triac (General Purpose)

Lineup

If more thermal capability is requested, LB series is available.

TO-220F

OKOK3016016BCR16PM-14LGOK

OKOKOKOKOKOKOKOKOKOKMP

OK

OKOKOKOKOKOKOKOKOKOKES

Status

VDRM=800V30505BCR5PM-14LG30303

700

BCR3PM-14LG

－3010010BCR10PM-12LG－30808BCR8PM-12LG－20505BCR5PM-12LG

(mA)(A)(A)(V)

－

(@Tj=125℃)Available

－－

－

NoteIGT(max)ITSMIT(RMS)VDRMPart No.

30808800BCR8PM-16LG

3012012BCR12PM-14LG30808BCR8PM-14LG

3016016BCR16PM-12LG3012012BCR12PM-12LG

20303

600

BCR3PM-12LG

OKOK3016016BCR16PM-14LGOK

OKOKOKOKOKOKOKOKOKOKMP

OK

OKOKOKOKOKOKOKOKOKOKES

Status

VDRM=800V30505BCR5PM-14LG30303

700

BCR3PM-14LG

－3010010BCR10PM-12LG－30808BCR8PM-12LG－20505BCR5PM-12LG

(mA)(A)(A)(V)

－

(@Tj=125℃)Available

－－

－

NoteIGT(max)ITSMIT(RMS)VDRMPart No.

30808800BCR8PM-16LG

3012012BCR12PM-14LG30808BCR8PM-14LG

3016016BCR16PM-12LG3012012BCR12PM-12LG

20303

600

BCR3PM-12LG

Application Motor control, Heater control such as Washing machine, Vacuum cleaner Rice cooker, etc…

Other TO-220 package Triac – Insulation type TO- 220, TO-220S,TO- 220, TO-220S, TO-220F(2), TO-220FN

LineupIsolated package

Viso: 1500VIsolated package

Viso: 2000V

Part No. VDRM Tj IT(RMS) ITSM IGT(max) Package

(V) ( )℃ (A) (A) (mA)

BCR30KM-8LB 400 150 30 300 (I, II, III) 30 TO-220FN

BCR2PM-12RE 600 150 2 10 (II, III) 10 TO-220F(2)

BCR8PM-12LE 125 8 80 (I, II, III) 30

BCR12PM-12LC 150 12 72 (I, II, III) 50

BCR16PM-12LC 150 16 96 (I, II, III) 50

BCR20KM-12LB 150 20 200 (I, II, III) 30

BCR25KM-12LB 150 25 250 (I, II, III) 50 TO-220FN

BCR25KR-12LB 150 25 250 (I, II, III) 50

BCR2PM-14LE 700/800 150/125 2 10 (II, III) 10 TO-220F(2)

BCR8PM-14LE 700 125 8 80 (I, II, III) 30

BCR8KM-16LA 800 125 8 80 (I, II, III) 30 TO-220FN

BCR8KM-20LA 1000 125 8 80 (I, II, III) 30 TO-220FN

Application Motor control, Heater control such as Washing machine, Vacuum cleaner, etc…

Other TO-220 package Triac – Non-insulation typeTO- 220, TO-220S, TO-220F(2), TO-220FNTO-220F(2), TO-220FN

Lineup

TO-220(I, II, III) 20505125600BCR5AM-12LA(I, II, III) 20505150BCR5AM-12LB(I, II, III) 30606125BCR6AM-12LA(I, II, III) 30606150BCR6AM-12LB

(I, II, III) 3020020125BCR20AM-12LA(I, II, III) 3017016150BCR16CM-12LB

(I, II, III) 3012012150BCR12CM-12LB(I, II, III) 3017016125BCR16CM-12LA

(I, II, III) 3020020150BCR20AM-12LB

(I, II, III) 3012012125BCR12CM-12LA(I, II, III) 3010010150BCR10CM-12LB(I, II, III) 3010010125BCR10CM-12LA(I, II, III) 30808150BCR8CM-12LB(I, II, III) 30808125BCR8CM-12LA

(℃)Tj Package

(mA)(A)(A)(V)IGT(max)ITSMIT(RMS)VDRMPart No.

TO-220(I, II, III) 20505125600BCR5AM-12LA(I, II, III) 20505150BCR5AM-12LB(I, II, III) 30606125BCR6AM-12LA(I, II, III) 30606150BCR6AM-12LB

(I, II, III) 3020020125BCR20AM-12LA(I, II, III) 3017016150BCR16CM-12LB

(I, II, III) 3012012150BCR12CM-12LB(I, II, III) 3017016125BCR16CM-12LA

(I, II, III) 3020020150BCR20AM-12LB

(I, II, III) 3012012125BCR12CM-12LA(I, II, III) 3010010150BCR10CM-12LB(I, II, III) 3010010125BCR10CM-12LA(I, II, III) 30808150BCR8CM-12LB(I, II, III) 30808125BCR8CM-12LA

(℃)Tj Package


TO-220S(I, II, III) 30808125600BCR8CS-12LA(I, II, III) 30808150(I, II, III) 3010010125

(℃)Tj Package


TO-220S(I, II, III) 30808150600

(I, II, III) 3012012150

(℃)Tj Package


BCR8CS-12LBBCR10CS-12LB 150BCR12CS-12LB

10 100 (I, II, III) 30

Small Power & Compact Triac

LineupA6 forming is available

BCR3AM-12B & BCR3AM-14B

Standard A6

5.0±0.5

2.0±

0.5

2.5±0.5 2.5±0.5

Standard A63A Triac in TO-92!

TO- 92, UPAK, MP- 3A, DPAK(L)-(3)

Application example

　　 AC switch, fan motor, rice cooker,

Electric pot, washing machine etc.

SOT-223’10/10OK(I, II, III) 580.8125BCR08DS-14A

TO-92OKOK(I, II, III) 15303150BCR3AM-12B

MP-3A’10/7OK(I, II, III) 1092125BCR2AS-14A

MP-3AOKOK(I, II, III) 30505125BCR5AS-14ATO-92

TO-92MP-3A

TO-92

MP-3AMP-3A

DPAK(L)-(3)MP-3AMP-3A

DPAK(L)-(3)

TO-92TO-92UPAKTO-92

Package

@Tj=125℃VDRM=800V

Note

OKOK(I, II, III) 15303150BCR3AS-12BOKOK(I, II, III) 15303125BCR3AS-12A

’10/7OK(I, II, III) 1081125800BCR1BM-16A

OKOK(I, II, III) 30303150BCR3AM-14BOKOK(I, II, III) 30303150BCR3AS-14B

OKOK(I, II, III) 580.8125700BCR08AM-14A

OKOK(I, II, III) 30505125BCR5AS-12AOKOK(I, II, III) 30505125BCR5AS-12AOKOK(I, II, III) 30505150BCR5AS-12B

OKOK(I, II, III) 15303125BCR3AS-12A

OKOK(I, II, III) 7101125BCR1AM-12AOKOK(I, II, III) 5, (IV) 10101125BCR1AM-12OKOK(I, II, III) 5, (IV) 1080.8125BCR08AS-12AOKOK(II, III) 580.8125600BCR08AM-12A

(℃)Tj

MPESStatus


SOT-223’10/10OK(I, II, III) 580.8125BCR08DS-14A

TO-92OKOK(I, II, III) 15303150BCR3AM-12B

MP-3A’10/7OK(I, II, III) 1092125BCR2AS-14A

MP-3AOKOK(I, II, III) 30505125BCR5AS-14ATO-92

TO-92MP-3A

TO-92

MP-3AMP-3A

DPAK(L)-(3)MP-3AMP-3A

DPAK(L)-(3)

TO-92TO-92UPAKTO-92

Package

@Tj=125℃VDRM=800V

Note

OKOK(I, II, III) 15303150BCR3AS-12BOKOK(I, II, III) 15303125BCR3AS-12A

’10/7OK(I, II, III) 1081125800BCR1BM-16A

OKOK(I, II, III) 30303150BCR3AM-14BOKOK(I, II, III) 30303150BCR3AS-14B

OKOK(I, II, III) 580.8125700BCR08AM-14A

OKOK(I, II, III) 30505125BCR5AS-12AOKOK(I, II, III) 30505125BCR5AS-12AOKOK(I, II, III) 30505150BCR5AS-12B

OKOK(I, II, III) 15303125BCR3AS-12A

OKOK(I, II, III) 7101125BCR1AM-12AOKOK(I, II, III) 5, (IV) 10101125BCR1AM-12OKOK(I, II, III) 5, (IV) 1080.8125BCR08AS-12AOKOK(II, III) 580.8125600BCR08AM-12A

(℃)Tj

MPESStatus


SOT-223

Schedule: ES: available MP: 7 / 2010

High dV/dt Triac, TO-92

BCR1BM-16ANew Product

1. T2 Terminal

2. Gate Terminal

3. T1 Terminal

500

dV/dt(V/us)

10 (I,II,III)

IGT

(mA)

8

ITSM

(A)

1

IT(RMS)

(A)

TO-92125800BCR1BM-16A

packageTj (℃)VDRM

(V)

500

dV/dt(V/us)

10 (I,II,III)

IGT

(mA)

8

ITSM

(A)

1

IT(RMS)

(A)

TO-92125800BCR1BM-16A

packageTj (℃)VDRM

(V)

Application example Rush current protection(SMPS), heater control, Motor control

Features　 1) High reliability ： Planar technology　 2) Isolated Package ： TO-220 Full Mold (TO-220FN,TO-220F)

TO-3P Full Mold (TO-3PFM)　 3) High voltage 　： 1000V,1500V　 4) High current ： 25A / 30A @ TO-220FN　 5) Lead Forming is available TO-3PFM

High Power Triac

Lineup

Part No. VDRM Tj IT(RMS) ITSM IGT(max) Status Package

(V) ( )℃ (A) (A) (mA) ES MP

BCR30KM-8LB 400 150 30 300 30 OK OK TO-220FN

BCR25KM-12LB 600 150 25 250 50 OK OK TO-220FN

BCR16RM-12LB 150 16 160 30 OK OK TO-3PFM

BCR25RM-12LB 150 25 250 50 OK OK

BCR30AM-12LB 150 30 300 50 OK OK TO-3P

BCR8PM-20LA 1000 125 8 80 30 OK OK TO-220F

BCR20RM-30LA 1500 125 20 200 50 OK OK TO-3PFM

Application example　　 Printer, Copier (Lamp, Halogen heater), Motor control, Inrush current protection circuit (SW power supply, Inverter lamp), etc… Features　 1) Improved life time at repetitive inrush current ： AL ribbon technology 2) Isolated Package ： TO-220 Full mold 3) High Temp. ： 150 guarantee℃ 4) Lead Forming is available

Customer’s benefit : Make your system with repetitive inrush current operation more reliable

Triac with AL Ribbon

Lineup AL ribbon AL wire

longer life-time at repetitive

inrush current

250160(A)

ITSM

150150(℃)Tj

TO-220F’09/5OK3016600BCR16PR-12LBOK

MP

OK

ESStatus

(mA)(A)(V)

TO-220FN

PackageIGT(max)IT(RMS)VDRMPart No.

5025600BCR25KR-12LB 250160(A)

ITSM

150150(℃)Tj

TO-220FOKOK3016600BCR16PR-12LBOK

MP

OK

ESStatus

(mA)(A)(V)

TO-220FN

PackageIGT(max)IT(RMS)VDRMPart No.

5025600BCR25KR-12LB

Application example　 Low inrush current application such as ceramic heater Features　 1) High Reliability ： Planar technology 2) Isolated Package ： TO-220 Full mold (UL recognized) 3) High Temp. ： 150 guarantee℃ 4) High noise immunity: IGT 50mA≦　 5) Lead Forming is available

Triac for low inrush current, LC/LD series

LineupTO-220FL TO-220F TO-220F(2)

Part No. VDRM Tj IT(RMS) ITSM IGT(max) Status Package

(V) ( )℃ (A) (A) (mA) CS MP

BCR8LM-12LD 150 8 48 50 OK July/’10 TO-220FL

BCR10LM-12LD 150 10 60 50 May/’10 July/’10

BCR12LM-12LD 150 12 72 50 OK July/’10

BCR16LM-12LD 150 16 96 50 OK July/’10

BCR8PM-12LD 600 150 8 48 50 OK OK TO-220F

BCR10PM-12LD 150 10 60 50 OK OK

BCR12PM-12LC 150 12 72 50 OK OK TO-220F(2)

BCR12PM-12LD 150 12 72 50 OK OK TO-220F

BCR16PM-12LC 150 16 96 50 OK OK TO-220F(2)

BCR16PM-12LD 150 16 96 50 OK OK TO-220F

BCR5LM-14LD 150 5 30 50 OK July/’10 TO-220FL

BCR8LM-14LD 150 8 48 50 May/’10 July/’10

BCR12LM-14LD 150 12 72 50 May/’10 July/’10

BCR5PM-14LD 700 150 5 30 50 OK OK TO-220F

BCR8PM-14LD 150 8 48 50 OK OK

Application example　 Heater control, Igniter, Regulator, Motor control, Inrush current protection circuit (SW power supply, Inverter lamp, Inverter) etc…

Features　 1) High Reliability ： Planar technology　 2) High Temp. ： 150 guarantee℃ 　 3) Lead Forming is available Customer’s benefit - Improve reliability - Increase thermal margin - Reduce size of heat-sink - Can be used in hot environment

New Product

150 ℃ guaranteed Thyristor

Lineup

TO-220OKOK10906

150600

CR6CM-12BOKOK151208CR8CM-12BOKOK3036012CR12CM-12B

TO-220FOKOK10906CR6PM-12BOKOK151208CR8PM-12BOKOK3036012CR12PM-12B

TO-3PFMOKOK3036025CR25RM-12D

(A)I(TSM)

(℃)Tj

MPESStatus

(mA)(A)(V)PackageIGT(max)IT(AV)VDRMPart No.

TO-220OKOK10906

150600

CR6CM-12BOKOK151208CR8CM-12BOKOK3036012CR12CM-12B

TO-220FOKOK10906CR6PM-12BOKOK151208CR8PM-12BOKOK3036012CR12PM-12B

TO-3PFMOKOK3036025CR25RM-12D

(A)I(TSM)

(℃)Tj

MPESStatus


Application example　 Heater control, Igniter, Regulator, Motor control, Inrush current protection circuit (SW power supply, Inverter lamp, Inverter) etc… Features　 1) Junction temperature ： 110 , 125℃ ℃　 2) IGT item is available 　 3) Lead Forming is available

General Thyristor

Lineup

OKOK10906125CR6PM-12AOKOK151208125CR8PM-12AOKOK3036012125CR12PM-12A

TO-220OKOK10906125CR6CM-12AOKOK151208125CR8CM-12A

DPAK(L)-(3)OKOK0.1905125CR5AS-12

TO-92OKOK0.1100.4125600CR04AM-12OKOK0.1100.3110CR05AM-12OKOK0.1200.3110CR03AM-12OKOK0.180.5125CR05BM-12

UPAKOKOK0.1100.8125CR08AS-12MP-3AOKOK0.1905125CR5AS-12

TO-220FNOKOK0.1703125CR3KM-12OKOK10906125CR6KM-12AOKOK151208125CR8KM-12A

TO-220FOKOK0.1703125CR3PM-12

OKOK3036012125CR12CM-12A

OKOK0.1200.3110CR03AM-16TO-92OKOK0.1100.3110800CR05AM-16

MPAKOKOK0.1100.1125CR05BS-8UPAKOKOK0.1100.5125CR05AS-8

TO-92(3)OKOK0.1100.3125CR02AM-8TO-92OKOK0.1100.3125400CR02AM-8

(A)I(TSM)

(℃)Tj

MPESStatus


OKOK10906125CR6PM-12AOKOK151208125CR8PM-12AOKOK3036012125CR12PM-12A

TO-220OKOK10906125CR6CM-12AOKOK151208125CR8CM-12A

DPAK(L)-(3)OKOK0.1905125CR5AS-12

TO-92OKOK0.1100.4125600CR04AM-12OKOK0.1100.3110CR05AM-12OKOK0.1200.3110CR03AM-12OKOK0.180.5125CR05BM-12

UPAKOKOK0.1100.8125CR08AS-12MP-3AOKOK0.1905125CR5AS-12

TO-220FNOKOK0.1703125CR3KM-12OKOK10906125CR6KM-12AOKOK151208125CR8KM-12A

TO-220FOKOK0.1703125CR3PM-12

OKOK3036012125CR12CM-12A

OKOK0.1200.3110CR03AM-16TO-92OKOK0.1100.3110800CR05AM-16

MPAKOKOK0.1100.1125CR05BS-8UPAKOKOK0.1100.5125CR05AS-8

TO-92(3)OKOK0.1100.3125CR02AM-8TO-92OKOK0.1100.3125400CR02AM-8

(A)I(TSM)

(℃)Tj

MPESStatus


Renesas TRIACs Series Line up – 400V, 600V

-

-

-

-

-

-

-

-

-

-

-

-

BCR08AS-12A

-

UPAK

---BCR30KM-8LB-----30A400V

BCR25RM-12LB

---BCR25KM-12LBBCR25KR-12LB

-----25A

-

BCR20KM-12LABCR20KM-12LB

-

-

-

-

-

TO-220FN

--12LB

-------30A

-----BCR20AM-12LABCR20AM-12LB

---20A

BCR16RM-12LB

-

BCR16PM-12LABCR16PM-12LBBCR16PM-12LDBCR16PM-12LGBCR16PR-12LB

BCR16CM-12LABCR16CM-12LB

---16A

--

BCR12PM-12LABCR12PM-12LBBCR12PM-12LDBCR12PM-12LG

BCR12CS-12LBBCR12CM-12LABCR12CM-12LB

---12A

--



---10A

--



---8A


---6A

5A

3A

2A

1A

0.8A

IT(RMS)

--BCR5PM-12LABCR5PM-12LBBCR5PM-12LG

-BCR5AM-12LABCR5AM-12LB

BCR5AS-12ABCR5AS-12ABCR5AS-12B

-


--BCR3AS-12ABCR3AS-12ABCR3AS-12B

-

--------

--------BCR1AM-12

BCR1AM-12A

--------BCR08AM-12A600V

VDRM

TO-3PFM

TO-3PTO-220FTO-220STO-220DPAK(L)-(3)

MP-3ATO-92

-

-

-

-

-

-

-

-

-

-

-

-

BCR08AS-12A

-

UPAK

---BCR30KM-8LB-----30A400V

BCR25RM-12LB

---BCR25KM-12LBBCR25KR-12LB

-----25A

-

BCR20KM-12LABCR20KM-12LB

-

-

-

-

-BCR30AM-12LB

-------30A


---20A

BCR16RM-12LB

-

BCR16PM-12LABCR16PM-12LBBCR16PM-12LDBCR16PM-12LGBCR16PR-12LB

BCR16CM-12LABCR16CM-12LB

---16A

--



---12A

--



---10A

--



---8A


---6A

5A

3A

2A

1A

0.8A

IT(RMS)


-BCR5AM-12LABCR5AM-12LB

BCR5AS-12ABCR5AS-12ABCR5AS-12B

-


--BCR3AS-12ABCR3AS-12ABCR3AS-12B

-

--BCR2PM-12RE-----

--------BCR1AM-12

BCR1AM-12A

--------BCR08AM-12A600V

VDRM

TO-3PFM

TO-3PTO-220FLTO-TO-220STO-220DPAK(L)-(3)

MP-3ATO-92

BCR3LM-12RBBCR3LM-12LB

BCR5LM-12RBBCR5LM-12LB

-

TO-220F(2)

BCR8PM-12LE BCR8LM-12LBBCR8LM-12LD

BCR10LM-12LBBCR10LM-12LD

BCR12PM- 12LC

BCR16PM- 12LC



-

-

-

-

Renesas TRIACs Series Line up – 700V, 800V, 1000V, 1500V

---BCR12PM-14LABCR12PM-14LG

-----12A

-

-

-

-

-

-

-

-

-

BCR8KM-20LA

BCR8KM-16LA

-

-

-

TO-220FN

--BCR2PM-14LE------2A

---BCR3PM-14LG--BCR3AS-14BBCR3AM-14B3A

--------BCR08AM-14A0.8A700V

--BCR8PM-14LEBCR8PM-14LABCR8PM-14LDBCR8PM-14LG

----8A

---BCR5PM-14LABCR5PM-14LDBCR5PM-14LG

---5A


-----8A

---BCR16PM-14LG----16A

20A

8A

IT(RMS)

BCR20RM-30LA--------1500V

---BCR8PM-20LA-----1000V

VDRM

TO-3PFM

TO-3PTO-220F(2)

TO-220FTO-92


-----12A

-

-

-

-

-

-

-

-

SOT-223

-

BCR8KM-20LA

BCR8KM-16LA

-

-

-

TO-220FN

--BCR2PM-14LE------2A

---BCR3PM-14LG--BCR3AM-14B3A

--------BCR08AM-14A0.8A700V

--BCR8PM-14LEBCR8PM-14LABCR8PM-14LDBCR8PM-14LG

----8A

---BCR5PM-14LABCR5PM-14LDBCR5PM-14LG

---5A


----8A

800V

---BCR16PM-14LG----16A

20A

8A

IT(RMS)

BCR20RM-30LA--------1500V

---BCR8PM-20LA-----1000V

VDRM

TO-3PFM

TO-3PTO-220F(2)

TO-220FTO-92 TO-220 TO-220S TO-220FLMP-3A

BCR5AS-14A

BCR08DS-14A

1A BCR1BM-16A ----------

BCR3LM-14LB

BCR5LM-14LB

BCR5LM-14LD

BCR8LM-14LB

BCR8LM-14LD

BCR12LM-14LBBCR12LM-14LDBCR16LM-14LB

-

-

-

-

Low power Use

General Use

*: New Products

Renesas Thyristors Line up

〇0.1mA10A0.1A400V125℃CR05BS-8MPAK〇0.1mA10A0.8A600V125℃CR08AS-12〇0.1mA10A0.5A400V125℃CR05AS-8UPAK〇0.1mA10A0.3A800V110℃CR05AM-16〇0.1mA20A0.3A800V110℃CR03AM-16〇0.1mA8A0.5A600V125℃CR05BM-12〇0.1mA10A0.4A600V125℃CR04AM-12〇0.1mA10A0.3A600V110℃CR05AM-12〇0.1mA20A0.3A600V110℃CR03AM-12〇0.1mA10A0.3A400V125℃CR02AM-8TO-92

StatusIGT(max)ITSMIT(AV)VDRMTjPart No.Package

〇0.1mA10A0.1A400V125℃CR05BS-8MPAK〇0.1mA10A0.8A600V125℃CR08AS-12〇0.1mA10A0.5A400V125℃CR05AS-8UPAK〇0.1mA10A0.3A800V110℃CR05AM-16〇0.1mA20A0.3A800V110℃CR03AM-16〇0.1mA8A0.5A600V125℃CR05BM-12〇0.1mA10A0.4A600V125℃CR04AM-12〇0.1mA10A0.3A600V110℃CR05AM-12〇0.1mA20A0.3A600V110℃CR03AM-12〇0.1mA10A0.3A400V125℃CR02AM-8TO-92


〇30mA360A12A600V125℃CR12PM-12A〇10mA90A6A600V150℃CR6PM-12B*〇15mA120A8A600V150℃CR8PM-12B*

〇30mA360A12A600V125℃CR12CM-12A〇10mA90A6A600V150℃CR6CM-12B*〇15mA120A8A600V150℃CR8CM-12B*

〇30mA360A25A600V150℃CR25RM-12D*TO-3PFM〇30mA360A12A600V150℃CR12CM-12B*

〇0.1mA90A5A600V125℃CR5AS-12MP-3A

〇15mA120A8A600V125℃CR8CM-12A

〇0.1mA90A5A600V125℃CR5AS-12DPAK(L)-(3)

〇10mA90A6A600V125℃CR6CM-12ATO-220〇30mA360A12A600V150℃CR12PM-12B*

〇15mA120A8A600V125℃CR8PM-12A〇10mA90A6A600V125℃CR6PM-12A〇0.1mA70A3A600V125℃CR3PM-12TO-220F〇15mA120A8A600V125℃CR8KM-12A〇10mA90A6A600V125℃CR6KM-12A〇0.1mA70A3A600V125℃CR3KM-12TO-220FN


〇30mA360A12A600V125℃CR12PM-12A〇10mA90A6A600V150℃CR6PM-12B*〇15mA120A8A600V150℃CR8PM-12B*

〇30mA360A12A600V125℃CR12CM-12A〇10mA90A6A600V150℃CR6CM-12B*〇15mA120A8A600V150℃CR8CM-12B*

〇30mA360A25A600V150℃CR25RM-12D*TO-3PFM〇30mA360A12A600V150℃CR12CM-12B*

〇0.1mA90A5A600V125℃CR5AS-12MP-3A

〇15mA120A8A600V125℃CR8CM-12A

〇0.1mA90A5A600V125℃CR5AS-12DPAK(L)-(3)

〇10mA90A6A600V125℃CR6CM-12ATO-220〇30mA360A12A600V150℃CR12PM-12B*

〇15mA120A8A600V125℃CR8PM-12A〇10mA90A6A600V125℃CR6PM-12A〇0.1mA70A3A600V125℃CR3PM-12TO-220F〇15mA120A8A600V125℃CR8KM-12A〇10mA90A6A600V125℃CR6KM-12A〇0.1mA70A3A600V125℃CR3KM-12TO-220FN


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