Download - Report from CNM activities

Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)

Report from CNM activitiesReport from CNM activities

Giulio Pellegrini

Centro Nacional de Microelectronica

Barcelona, Spain


Medipix2

Diodes 2Dspreading

Test structures

Atlas pixel

3d pads

strips

Long strip

10x10 matrixMOS

Test for SEM

3x3 matrix

Pilatus

Mask designMask design


LayoutLayout

Passivation

n+ doped

55um pitch

50-0um

300-250ump- type substrate

p+ doped

10um

Oxide0.4um1um

p+ doped

Metal

Poly 3um

OxideMetal

P-stop p+

50-0um TEOS 2um

5um

High resistiv itySem iconductor

Pixel readout

Electronics ch ip

Solder bum p

PN N

3 detectors have been bump bonded in VTT to a Medipix2 chip.3 will be done soon


Fabricated detectorsFabricated detectors

3rd Workshop on Advanced Silicon Radiation Detectors

C. Fleta


Double sided 3DDouble sided 3DFirst run is p-in-n:

• 250 μm p+ columns in 300 μm n-type substrate

Electrode fabrication:1. ICP etching of the holes: Bosch process, ALCATEL 601-E2. Holes partially filled with 3 µm LPCVD poly3. Doping with P or B4. Holes passivated with 2 µm TEOS SiO2

(all fabrication done in-house)

-Deep RIE-ICP.

- Load-lock manual one 4” wafer

- SF6 etching

- C4F8 passivation

- Cooled mechanical clamping :He-Ln2

- Possibility of Cryogenic etching.


Bump bonding at Bump bonding at CNMCNM

• Small clean room class 100 at CNM dedicated to packaging: Flip chip, Wire bonding, CMP

• Joint project with IFAE (High Energy Physics Institute)

• Bump bonding machine Süss Microtech FC150Installation finished last week

• Bumping process ready: electrodeposited SnPb and SnAg

• CMP G&P POLI-400L (Installation pending)


Holes etchingHoles etching


Poly fillingPoly filling

polysilicon


Doping of polyDoping of poly

Poly-n+

Si-n+


Poly etchingPoly etching


Second etchingSecond etching


Second poly fillingSecond poly filling


Si-n-

Si-p+

Si-n+

SiO2

Poly-p+

Poly-n+

Al/Cu

Passiv

Final sampleFinal sample

Mask Levels

• Back-window

• N-DIFF

• N-HOLES

• P-HOLES

• POLY

• WINDOW

• METAL

• PASSIV

• Bump bonding


3D technology3D technology

•10 m holes•55m pitch•90 minutes etching•300 m thick wafer•Aspect ratio 24:1


3D technology3D technology

10um

45um


3D technology3D technologypixels strips


Pixel configurationPixel configuration

Polysilicon contactOpening in the passivation

P-type Hole Metal


Medipix 2


Atlas pixelsAtlas pixels


Test structures

Strips (DC coupled)Pilatus


TestingTesting

•Irradiation with neutrons- please see Celeste´s talk

•Charge collection- please see Celeste´s talk

•Electrical characterization I-V and CV

•Imaging- waiting for bump bonding


New Fabrication RunNew Fabrication Run

Passivation

n+ doped

55um pitch

300um

p- type substrate

p+ doped

Oxide0.4um1um

p+ doped

Metal

Poly 3um

Oxide

Metal

P-stop p+

Oxide 2um

5um13um

8 wafers p-type8 wafers n-type

In Fabrication, due for the end of June 2008


Thank you

Download - Report from CNM activities

Top Related