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DatasheetS2307
N-channel SiC power MOSFET bare die
VDSS 1200V
RDS(on) (Typ.) 45mID 68A*1
・Switch mode power supplies
FeaturesInner circuit
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
Application
・Solar inverters
・DC/DC converters
・Induction heating
・Motor drives
Absolute maximum ratings (Ta = 25°C)
Parameter Symbol
Continuous drain current Tc = 25°C ID *1 68 A
Unit
Drain - Source voltage VDSS 1200 V
Value
Pulsed drain current ID,pulse *2 160 A
Gate - Source surge voltage (tsurge < 300nsec) VGSS_surge*3 10 to 26 V
Gate - Source voltage (DC) VGSS 6 to 22 V
Junction temperature Tj 175 °C
Range of storage temperature Tstg 55 to 175 °C
(1) Gate(2) Drain(3) Source
*1 Body Diode
(1)
(3)
(2)
*1
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DatasheetS2307
UnitMin. Typ. Max.
Electrical characteristics (Ta = 25°C)
Parameter Symbol ConditionsValues
V
Zero gate voltagedrain current
IDSS
VDS = 1200V, VGS = 0V
ATj = 25°C -
Drain - Source breakdownvoltage
V(BR)DSS VGS = 0V, ID = 1mA 1200 - -
1 10
Tj = 150°C - 2 -
Gate - Source leakage current IGSS VGS = 22V, VDS = 0V - - 100 nA
Gate - Source leakage current IGSS VGS = 6V, VDS = 0V - - 100 nA
4.0 V
Static drain - sourceon - state resistance
RDS(on) *4
VGS = 18V, ID = 22A
mTj = 25°C
Gate threshold voltage VGS (th) VDS = VGS, ID = 8.9mA 1.6 2.8
- 45 56
Tj = 125°C - 70 -
Gate input resistance RG f = 1MHz, open drain - 4.7 -
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DatasheetS2307
Electrical characteristics (Ta = 25°C)
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
S
Input capacitance Ciss VGS = 0V - 4310 -
pFOutput capacitance Coss
Transconductance gfs *4 VDS = 10V, ID = 22A - 7 -
VDS = 800V - 137 -
Reverse transfer capacitance Crss f = 1MHz - 19 -
pF
Turn - on delay time td(on) *4 VDD = 400V, ID = 18A - 33 -
nsRise time
Effective output capacitance,energy related
Co(er)VGS = 0VVDS = 0V to 800V
- 173 -
-
Fall time tf *4 RG = 0 - 28 -
tr *4 VGS = 18V/0V - 42 -
Turn - off delay time td(off) *4 RL = 22 - 94
J
Turn - off switching loss Eoff *4 - 170 -
Turn - on switching loss Eon *4 VDD = 600V, ID=20A
VGS = 18V/0V
RG = 0 L=500H*Eon includes diode reverse recovery
- 483 -
- 189 -
Gate Charge characteristics (Ta = 25°C)
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
V
- 55 -
Gate plateau voltage V(plateau) VDD = 400V, ID = 20A - 9.6 -
nCGate - Source charge Qgs *4 ID = 20A - 48 -
Gate - Drain charge Qgd *4 VGS = 18V
Total gate charge Qg *4 VDD = 400V
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DatasheetS2307
Body diode electrical characteristics (Source-Drain) (Ta = 25°C)
*1 For Tj=175°C and thermal dissipation to ambience of 427W or more.
Limited only by maximum temperature allowed.
*2 PW 10s, Duty cycle 1%
*3 Example of acceptable Vgs waveform
*4 Pulsed
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
A
Inverse diode direct current,pulsed
ISM *2 - - 160 A
Inverse diode continuous,forward current
IS *1
Tc = 25°C
- - 68
V
Reverse recovery time trr *4
IF = 22A, VR = 600V
di/dt = 520A/s
- 62 - ns
Reverse recovery charge
Forward voltage VSD *4 VGS = 0V, IS = 22A - 4.1 -
Peak reverse recovery current Irrm *4 - 9.2 - A
Qrr *4 - 282 - nC
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DatasheetS2307
Electrical characteristic curves
Fig.1 Typical Output Characteristics(I)
Dra
in C
urre
nt :
ID
[A]
Drain - Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics(II)
Drain - Source Voltage : VDS [V]
Fig.3 Tj = 150ºC Typical Output Characteristics(I)
Dra
in C
urre
nt :
ID
[A]
Drain - Source Voltage : VDS [V]
Fig.4 Tj = 150ºC Typical Output Characteristics(II)
Dra
in C
urre
nt :
ID
[A]
Drain - Source Voltage : VDS [V]
Dra
in C
urre
nt :
ID
[A]
0
10
20
30
40
50
60
70
80
0 2 4 6 8 10
Ta = 25ºCPulsed
10V
VGS= 8V
12V
16V
20V
18V
14V
0
5
10
15
20
25
30
35
40
0 1 2 3 4 5
Ta = 25ºCPulsed
VGS= 8V
10V
14V
16V
18V
20V
12V
0
10
20
30
40
50
60
70
80
0 2 4 6 8 10
Ta = 150ºCPulsed
10V
VGS= 8V
18V
16V
20V14V
12V
0
5
10
15
20
25
30
35
40
0 1 2 3 4 5
Ta = 150ºCPulsed
VGS= 8V
18V
16V
14V
12V
20V
10V
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DatasheetS2307
Electrical characteristic curves
Fig.5 Typical Transfer Characteristics (I)
Dra
in C
urre
nt :
ID
[A]
Gate - Source Voltage : VGS [V]
Fig.6 Typical Transfer Characteristics (II)
Gate - Source Voltage : VGS [V]
Fig.7 Gate Threshold Voltagevs. Junction Temperature
Gat
e T
hres
hold
Vol
tage
: V
GS
(th)
[V]
Junction Temperature : Tj [ºC]
Fig.8 Transconductance vs. Drain Current
Tra
nsco
nduc
tanc
e : g
fs[S
]
Drain Current : ID [A]
Dra
in C
urre
nt :
ID
[A]
0.1
1
10
0.1 1 10
VDS = 10VPulsed
Ta = 150ºCTa = 75ºCTa = 25ºCTa = 25ºC
0
1
2
3
4
5
6
-50 0 50 100 150 200
VDS = 10VID = 8.9mA
0.01
0.1
1
10
100
0 2 4 6 8 10 12 14 16 18 20
Ta= 150ºCTa= 75ºCTa= 25ºCTa= 25ºC
VDS = 10VPulsed
0
10
20
30
40
50
60
0 2 4 6 8 10 12 14 16 18 20
Ta= 150ºCTa= 75ºCTa= 25ºCTa= 25ºC
VDS = 10VPulsed
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DatasheetS2307
Electrical characteristic curves
Fig.9 Static Drain - Source On - StateResistance vs. Gate - Source Voltage
Sta
tic D
rain
-S
ourc
e O
n-S
tate
Res
ista
nce
: RD
S(o
n)[
]
Gate - Source Voltage : VGS [V]
Fig.10 Static Drain - Source On - StateResistance vs. Junction Temperature
Junction Temperature : Tj [ºC]
Fig.11 Static Drain - Source On - StateResistance vs. Drain Current
Drain Current : ID [A]
Sta
tic D
rain
-S
ourc
e O
n-S
tate
Res
ista
nce
: RD
S(o
n)[
]
Sta
tic D
rain
-S
ourc
e O
n-S
tate
Res
ista
nce
: RD
S(o
n)[
]
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
8 10 12 14 16 18 20 22
ID = 22A
ID = 44A
Ta = 25ºCPulsed
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
0.12
-25 25 75 125 175
VGS = 18VPulsed
ID = 44A
ID = 22A
0.01
0.1
1
1 10 100
VGS = 18VPulsed
Ta = 150ºCTa = 125ºCTa = 75ºCTa = 25ºCTa = 25ºC
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DatasheetS2307
Electrical characteristic curves
Fig.12 Typical Capacitancevs. Drain - Source Voltage
Cap
acita
nce
: C
[pF
]
Drain - Source Voltage : VDS [V]
Fig.13 Coss Stored Energy
Drain - Source Voltage : VDS [V]
Fig.14 Switching Characteristics
Sw
itchi
ng T
ime
: t [
ns]
Drain Current : ID [A]
Fig.15 Dynamic Input Characteristics
Gat
e -
Sou
rce
Vol
tage
: V
GS
[V]
Total Gate Charge : Qg [nC]
Cos
s S
tore
d E
nerg
y : E
OS
S[
J]
0
5
10
15
20
25
30
35
40
45
50
55
60
0 200 400 600 800
Ta = 25ºC
1
10
100
1000
10000
0.1 1 10 100 1000
Ciss
Coss
Crss
Ta = 25ºCf = 1MHzVGS = 0V
0
5
10
15
20
0 40 80 120 160 200
Ta = 25ºCVDD = 400VID = 20APulsed
1
10
100
1000
10000
0.1 1 10 100
td(off)
Ta = 25ºCVDD = 400VVGS = 18VRG = 0Pulsed
tf
td(on)
tr
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DatasheetS2307
Electrical characteristic curves
Fig.16 Typical Switching Lossvs. Drain - Source Voltage
Sw
itchi
ng E
nerg
y : E
[J
]
Drain - Source Voltage : VDS [V]
Fig.17 Typical Switching Lossvs. Drain Current
Drain Current : ID [A]
Fig.18 Typical Switching Lossvs. External Gate Resistance
Sw
itchi
ng E
nerg
y : E
[J
]
External Gate Resistance : RG []
Sw
itchi
ng E
nerg
y : E
[J
]
0
500
1000
1500
2000
2500
3000
3500
0 10 20 30 40 50 60 70
Ta = 25ºCVDD=600VVGS = 18V/0VRG=0L=500H
Eon
Eoff
0
100
200
300
400
500
600
700
800
900
1000
200 400 600 800 1000
Ta = 25ºCID=20AVGS = 18V/0VRG=0L=500H
Eon
Eoff
0
500
1000
1500
2000
0 5 10 15 20 25 30
Ta = 25ºCVDD=600VID=20AVGS = 18V/0VL=500H Eon
Eoff
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DatasheetS2307
Electrical characteristic curves
Fig.19 Inverse Diode Forward Currentvs. Source - Drain Voltage
Inve
rse
Dio
de
For
war
d C
urre
nt :
IS
[A]
Source - Drain Voltage : VSD [V]
Fig.20 Reverse Recovery Timevs.Inverse Diode Forward Current
Inverse Diode Forward Current : IS [A]
Rev
erse
Rec
over
y T
ime
: trr
[ns]
0.01
0.1
1
10
100
0 1 2 3 4 5 6 7 8
VGS = 0VPulsed
Ta = 150ºCTa = 75ºCTa = 25ºCTa = 25ºC
10
100
1000
1 10 100
Ta = 25ºCdi / dt = 520A / usVR = 600VVGS = 0VPulsed
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DatasheetS2307
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
D.U.T.
VsurgeIrr
Eon = ID×VDS Eoff = ID×VDS
ID
VDS
Same type device as D.U.T.
D.U.T.
ID
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