s2307 : sic power mosfet...gate - source surge voltage (tsurge < 300nsec) vgss_surge *3 10 to 26...

www.rohm.com© 2017 ROHM Co., Ltd. All rights reserved.

DatasheetS2307

N-channel SiC power MOSFET bare die

VDSS 1200V

RDS(on) (Typ.) 45mID 68A*1

・Switch mode power supplies

FeaturesInner circuit

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

5) Simple to drive

Application

・Solar inverters

・DC/DC converters

・Induction heating

・Motor drives

Absolute maximum ratings (Ta = 25°C)

Parameter Symbol

Continuous drain current Tc = 25°C ID *1 68 A

Unit

Drain - Source voltage VDSS 1200 V

Value

Pulsed drain current ID,pulse *2 160 A

Gate - Source surge voltage (tsurge < 300nsec) VGSS_surge*3 10 to 26 V

Gate - Source voltage (DC) VGSS 6 to 22 V

Junction temperature Tj 175 °C

Range of storage temperature Tstg 55 to 175 °C

(1) Gate(2) Drain(3) Source

*1 Body Diode

(1)

(3)

(2)

*1

1/11 2017.04 - Rev.A


DatasheetS2307

UnitMin. Typ. Max.

Electrical characteristics (Ta = 25°C)

Parameter Symbol ConditionsValues

V

Zero gate voltagedrain current

IDSS

VDS = 1200V, VGS = 0V

ATj = 25°C -

Drain - Source breakdownvoltage

V(BR)DSS VGS = 0V, ID = 1mA 1200 - -

1 10

Tj = 150°C - 2 -

Gate - Source leakage current IGSS VGS = 22V, VDS = 0V - - 100 nA

Gate - Source leakage current IGSS VGS = 6V, VDS = 0V - - 100 nA

4.0 V

Static drain - sourceon - state resistance

RDS(on) *4

VGS = 18V, ID = 22A

mTj = 25°C

Gate threshold voltage VGS (th) VDS = VGS, ID = 8.9mA 1.6 2.8

- 45 56

Tj = 125°C - 70 -

Gate input resistance RG f = 1MHz, open drain - 4.7 -

2/11 2017.04 - Rev.A


DatasheetS2307

Electrical characteristics (Ta = 25°C)


UnitMin. Typ. Max.

S

Input capacitance Ciss VGS = 0V - 4310 -

pFOutput capacitance Coss

Transconductance gfs *4 VDS = 10V, ID = 22A - 7 -

VDS = 800V - 137 -

Reverse transfer capacitance Crss f = 1MHz - 19 -

pF

Turn - on delay time td(on) *4 VDD = 400V, ID = 18A - 33 -

nsRise time

Effective output capacitance,energy related

Co(er)VGS = 0VVDS = 0V to 800V

- 173 -

-

Fall time tf *4 RG = 0 - 28 -

tr *4 VGS = 18V/0V - 42 -

Turn - off delay time td(off) *4 RL = 22 - 94

J

Turn - off switching loss Eoff *4 - 170 -

Turn - on switching loss Eon *4 VDD = 600V, ID=20A

VGS = 18V/0V

RG = 0 L=500H*Eon includes diode reverse recovery

- 483 -

- 189 -

Gate Charge characteristics (Ta = 25°C)


UnitMin. Typ. Max.

V

- 55 -

Gate plateau voltage V(plateau) VDD = 400V, ID = 20A - 9.6 -

nCGate - Source charge Qgs *4 ID = 20A - 48 -

Gate - Drain charge Qgd *4 VGS = 18V

Total gate charge Qg *4 VDD = 400V

3/11 2017.04 - Rev.A


DatasheetS2307

Body diode electrical characteristics (Source-Drain) (Ta = 25°C)

*1 For Tj=175°C and thermal dissipation to ambience of 427W or more.

Limited only by maximum temperature allowed.

*2 PW 10s, Duty cycle 1%

*3 Example of acceptable Vgs waveform

*4 Pulsed


UnitMin. Typ. Max.

A

Inverse diode direct current,pulsed

ISM *2 - - 160 A

Inverse diode continuous,forward current

IS *1

Tc = 25°C

- - 68

V

Reverse recovery time trr *4

IF = 22A, VR = 600V

di/dt = 520A/s

- 62 - ns

Reverse recovery charge

Forward voltage VSD *4 VGS = 0V, IS = 22A - 4.1 -

Peak reverse recovery current Irrm *4 - 9.2 - A

Qrr *4 - 282 - nC

4/11 2017.04 - Rev.A


DatasheetS2307

Electrical characteristic curves

Fig.1 Typical Output Characteristics(I)

Dra

in C

urre

nt :

ID

[A]

Drain - Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics(II)


Fig.3 Tj = 150ºC Typical Output Characteristics(I)

Dra

in C

urre

nt :

ID

[A]


Fig.4 Tj = 150ºC Typical Output Characteristics(II)

Dra

in C

urre

nt :

ID

[A]


Dra

in C

urre

nt :

ID

[A]

0

10

20

30

40

50

60

70

80

0 2 4 6 8 10

Ta = 25ºCPulsed

10V

VGS= 8V

12V

16V

20V

18V

14V

0

5

10

15

20

25

30

35

40

0 1 2 3 4 5

Ta = 25ºCPulsed

VGS= 8V

10V

14V

16V

18V

20V

12V

0

10

20

30

40

50

60

70

80

0 2 4 6 8 10

Ta = 150ºCPulsed

10V

VGS= 8V

18V

16V

20V14V

12V

0

5

10

15

20

25

30

35

40

0 1 2 3 4 5

Ta = 150ºCPulsed

VGS= 8V

18V

16V

14V

12V

20V

10V

5/11 2017.04 - Rev.A


DatasheetS2307


Fig.5 Typical Transfer Characteristics (I)

Dra

in C

urre

nt :

ID

[A]

Gate - Source Voltage : VGS [V]

Fig.6 Typical Transfer Characteristics (II)


Fig.7 Gate Threshold Voltagevs. Junction Temperature

Gat

e T

hres

hold

Vol

tage

: V

GS

(th)

[V]

Junction Temperature : Tj [ºC]

Fig.8 Transconductance vs. Drain Current

Tra

nsco

nduc

tanc

e : g

fs[S

]

Drain Current : ID [A]

Dra

in C

urre

nt :

ID

[A]

0.1

1

10

0.1 1 10

VDS = 10VPulsed

Ta = 150ºCTa = 75ºCTa = 25ºCTa = 25ºC

0

1

2

3

4

5

6

-50 0 50 100 150 200

VDS = 10VID = 8.9mA

0.01

0.1

1

10

100

0 2 4 6 8 10 12 14 16 18 20

Ta= 150ºCTa= 75ºCTa= 25ºCTa= 25ºC

VDS = 10VPulsed

0

10

20

30

40

50

60

0 2 4 6 8 10 12 14 16 18 20

Ta= 150ºCTa= 75ºCTa= 25ºCTa= 25ºC

VDS = 10VPulsed

6/11 2017.04 - Rev.A


DatasheetS2307


Fig.9 Static Drain - Source On - StateResistance vs. Gate - Source Voltage

Sta

tic D

rain

-S

ourc

e O

n-S

tate

Res

ista

nce

: RD

S(o

n)[

]


Fig.10 Static Drain - Source On - StateResistance vs. Junction Temperature

Junction Temperature : Tj [ºC]

Fig.11 Static Drain - Source On - StateResistance vs. Drain Current


Sta

tic D

rain

-S

ourc

e O

n-S

tate

Res

ista

nce

: RD

S(o

n)[

]

Sta

tic D

rain

-S

ourc

e O

n-S

tate

Res

ista

nce

: RD

S(o

n)[

]

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

8 10 12 14 16 18 20 22

ID = 22A

ID = 44A

Ta = 25ºCPulsed

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.1

0.11

0.12

-25 25 75 125 175

VGS = 18VPulsed

ID = 44A

ID = 22A

0.01

0.1

1

1 10 100

VGS = 18VPulsed

Ta = 150ºCTa = 125ºCTa = 75ºCTa = 25ºCTa = 25ºC

7/11 2017.04 - Rev.A


DatasheetS2307


Fig.12 Typical Capacitancevs. Drain - Source Voltage

Cap

acita

nce

: C

[pF

]


Fig.13 Coss Stored Energy


Fig.14 Switching Characteristics

Sw

itchi

ng T

ime

: t [

ns]


Fig.15 Dynamic Input Characteristics

Gat

e -

Sou

rce

Vol

tage

: V

GS

[V]

Total Gate Charge : Qg [nC]

Cos

s S

tore

d E

nerg

y : E

OS

S[

J]

0

5

10

15

20

25

30

35

40

45

50

55

60

0 200 400 600 800

Ta = 25ºC

1

10

100

1000

10000

0.1 1 10 100 1000

Ciss

Coss

Crss

Ta = 25ºCf = 1MHzVGS = 0V

0

5

10

15

20

0 40 80 120 160 200

Ta = 25ºCVDD = 400VID = 20APulsed

1

10

100

1000

10000

0.1 1 10 100

td(off)

Ta = 25ºCVDD = 400VVGS = 18VRG = 0Pulsed

tf

td(on)

tr

8/11 2017.04 - Rev.A


DatasheetS2307


Fig.16 Typical Switching Lossvs. Drain - Source Voltage

Sw

itchi

ng E

nerg

y : E

[J

]


Fig.17 Typical Switching Lossvs. Drain Current


Fig.18 Typical Switching Lossvs. External Gate Resistance

Sw

itchi

ng E

nerg

y : E

[J

]

External Gate Resistance : RG []

Sw

itchi

ng E

nerg

y : E

[J

]

0

500

1000

1500

2000

2500

3000

3500

0 10 20 30 40 50 60 70

Ta = 25ºCVDD=600VVGS = 18V/0VRG=0L=500H

Eon

Eoff

0

100

200

300

400

500

600

700

800

900

1000

200 400 600 800 1000

Ta = 25ºCID=20AVGS = 18V/0VRG=0L=500H

Eon

Eoff

0

500

1000

1500

2000

0 5 10 15 20 25 30

Ta = 25ºCVDD=600VID=20AVGS = 18V/0VL=500H Eon

Eoff

9/11 2017.04 - Rev.A


DatasheetS2307


Fig.19 Inverse Diode Forward Currentvs. Source - Drain Voltage

Inve

rse

Dio

de

For

war

d C

urre

nt :

IS

[A]

Source - Drain Voltage : VSD [V]

Fig.20 Reverse Recovery Timevs.Inverse Diode Forward Current

Inverse Diode Forward Current : IS [A]

Rev

erse

Rec

over

y T

ime

: trr

[ns]

0.01

0.1

1

10

100

0 1 2 3 4 5 6 7 8

VGS = 0VPulsed

Ta = 150ºCTa = 75ºCTa = 25ºCTa = 25ºC

10

100

1000

1 10 100

Ta = 25ºCdi / dt = 520A / usVR = 600VVGS = 0VPulsed

10/11 2017.04 - Rev.A


DatasheetS2307

Measurement circuits

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms

Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform

D.U.T.

VsurgeIrr

Eon = ID×VDS Eoff = ID×VDS

ID

VDS

Same type device as D.U.T.

D.U.T.

ID

11/11 2017.04 - Rev.A

R1102Awww.rohm.com© 2015 ROHM Co., Ltd. All rights reserved.

Notice

ROHM Customer Support System http://www.rohm.com/contact/

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.

N o t e s

The information contained herein is subject to change without notice.

Before you use our Products, please contact our sales representative and verify the latest specifica-tions :

Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to various factors.Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.

Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.

The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document.

The Products specified in this document are not designed to be radiation tolerant.

For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems.

Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.

ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.

ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.

Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.

When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.

This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.

1)

2)

3)

4)

5)

6)

7)

8)

9)

10)

11)

12)

13)

14)

s2307 : sic power mosfet...gate - source surge voltage (tsurge < 300nsec) vgss_surge *3 10 to 26...

Documents