1Grad. Research Student, Department of Electronics and Communication Engineering, Lovely Professional University, PB, India 2Assistant Professor, Department of Electronics and Communication Engineering, Lovely Professional University, PB, India

Abstract

Poly-Si and Au based MEMS; high reliability; low voltage switch; RF MEMS; wideband millimeter wave applications

1. Introduction

Tel e-mail

Tejinder Singh and Anita Kumari

2. Design and Operation Principle

Substrate

CPWMembrane

RF In

Si N Layer3 4

RF Out

Membrane

0.2μm Poly-Si Layer(Top)

0.5μm Au Layer(Bottom)

Design and modeling of a robust wideband Poly-Si and Au based capacitive RF MEMS switch for millimeter wave applications

n G E v Ixwt

J = 13t 3w 1− 192

π 5

t

w

1

i5tanh

iπw2t

⎛⎝⎜

⎞⎠⎟

t=1,i odd

∞

∑⎛

⎝⎜⎞

⎠⎟

l l k Ew t nl

3. Actuation Voltage and Spring Constant Analysis

60 mμ 30 mμ

10 mμ20 mμ 80 mμ

240 mμ

k ≈ 48GJ

la2 GJEIx

la + lb⎛⎝⎜

⎞⎠⎟n3

for n3lb

GJEIx

la + lb

Tejinder Singh and Anita Kumari

4. Mechanical Stress Analysis using FEM

Vp =8k

27ε0wWg03

Design and modeling of a robust wideband Poly-Si and Au based capacitive RF MEMS switch for millimeter wave applications

5. RF Performance Analysis

0.5 1 1.5 2 2.5 3 3.5

Total Displacement [ m]μ

Spring Constant, k

Fo

rce

Ap

plied

[μ

N]

12

10

8

6

4

2

04

1μ Poly-Si only1μ Au only0.2μ Poly-Si on 0.5μ Au0.2μ Au on 0.5μ Poly-Si0.4μ Poly-Si on 0.4μ Au0.4μ Au on 0.4μ Poly-Si

Actuation Voltage vs Deflection

1 2 31.5 2.5

Membrane Deflection [um]

Actu

ati

on

Vo

ltag

e [

V]

28

25

22

19

16

13

10

7

4

1μ Poly-Si only1μ Au only0.2μ Poly-Si on 0.5μ Au0.2μ Au on 0.5μ Poly-Si0.4μ Poly-Si on 0.4μ Au0.4μ Au on 0.4μ Poly-Si

Tejinder Singh and Anita Kumari

6. Conclusion

30 40 50 60 70 80 90 100

Frequency [GHz]

S-Parameters [dB] in OFF State

Retu

rn L

oss [

dB

]

Return Loss (S )11

Isolation (S )21

20

Iso

lati

on

[d

B]

00

-10

-20

-30

-40

-50

-60

-0.10

-0.15

-0.20

-0.25

-0.30

-0.35

-0.40

S-Parameters [dB] in ON State

Re

turn

Lo

ss

[d

B]

Insertion Loss (S )21

Return Loss (S )11

Ins

ert

ion

Lo

ss

[d

B]

30 40 50 60 70 80 90 100

Frequency [GHz]

20

-20

-25

-30

-35

-40

-45

-50

-0.03

-0.06

-0.09

-0.12

-0.15

-0.18

-0.21

Design and modeling of a robust wideband Poly-Si and Au based capacitive RF MEMS switch for millimeter wave applications

References

IEEE Microwave Guided Wave Letters

IEEE Microwave Magazine IEEE Transactions on Components

Packaging and Technologies Applied Microwave and Wireless IEEE International

Microwave Symposium Digest Journal of

Microelectromechanical Systems IEEE International Microwave

Symposium Digest Proceedings of IEEE GaAs Symposium

Digest

Transactions on Electrical and Electronic Materials

IEEE Transactions on Microwave Theory and Techniques

Proceedings of the 10th IEEE International Workshop on Microelectromechanical Systems

IEEE Transactions on Microwave Theory and Techniques

Transactions on Electrical and Electronic Materials

Index

A

Actuation voltage for RF MEMS switchs

specifications, 110–111

C

Coplanar waveguide (CPW), 109

CPW. see Coplanar waveguide (CPW)

D

Design and operation principle

CPW, 109

designed membrane and meanders, dimensions, 110

Poly-Si and Au layered membrane close-up view, 109

wideband robust capacitive RF MEMS switch, 109

M

Microelectromechanical systems (MEMS), 108

R

Radio-frequency (RF) microelectromechanical systems (MEMS) switches

actuation voltage, 110–111

design and operation principle, 109–110

mechanical stress analysis using FEM, 111–112

RF performance analysis, 112–113

spring constant analysis, 110–111

RF MEMS switches. see Radio-frequency (RF) microelectromechanical systems

(MEMS) switches

RF performance analysis for RF MEMS switches

S-parameters, 112

typical values for, 113

S

Spring constant analysis for RF MEMS switchs, 111