session 01_paper 16
DESCRIPTION
Wilkes1002nd International Conference on Computing Sciences 15-16 November 2013TRANSCRIPT
1Grad. Research Student, Department of Electronics and Communication Engineering, Lovely Professional University, PB, India 2Assistant Professor, Department of Electronics and Communication Engineering, Lovely Professional University, PB, India
Abstract
Poly-Si and Au based MEMS; high reliability; low voltage switch; RF MEMS; wideband millimeter wave applications
1. Introduction
Tel e-mail
Tejinder Singh and Anita Kumari
2. Design and Operation Principle
Substrate
CPWMembrane
RF In
Si N Layer3 4
RF Out
Membrane
0.2μm Poly-Si Layer(Top)
0.5μm Au Layer(Bottom)
Design and modeling of a robust wideband Poly-Si and Au based capacitive RF MEMS switch for millimeter wave applications
n G E v Ixwt
J = 13t 3w 1− 192
π 5
t
w
1
i5tanh
iπw2t
⎛⎝⎜
⎞⎠⎟
t=1,i odd
∞
∑⎛
⎝⎜⎞
⎠⎟
l l k Ew t nl
3. Actuation Voltage and Spring Constant Analysis
60 mμ 30 mμ
10 mμ20 mμ 80 mμ
240 mμ
k ≈ 48GJ
la2 GJEIx
la + lb⎛⎝⎜
⎞⎠⎟n3
for n3lb
GJEIx
la + lb
Tejinder Singh and Anita Kumari
4. Mechanical Stress Analysis using FEM
Vp =8k
27ε0wWg03
Design and modeling of a robust wideband Poly-Si and Au based capacitive RF MEMS switch for millimeter wave applications
5. RF Performance Analysis
0.5 1 1.5 2 2.5 3 3.5
Total Displacement [ m]μ
Spring Constant, k
Fo
rce
Ap
plied
[μ
N]
12
10
8
6
4
2
04
1μ Poly-Si only1μ Au only0.2μ Poly-Si on 0.5μ Au0.2μ Au on 0.5μ Poly-Si0.4μ Poly-Si on 0.4μ Au0.4μ Au on 0.4μ Poly-Si
Actuation Voltage vs Deflection
1 2 31.5 2.5
Membrane Deflection [um]
Actu
ati
on
Vo
ltag
e [
V]
28
25
22
19
16
13
10
7
4
1μ Poly-Si only1μ Au only0.2μ Poly-Si on 0.5μ Au0.2μ Au on 0.5μ Poly-Si0.4μ Poly-Si on 0.4μ Au0.4μ Au on 0.4μ Poly-Si
Tejinder Singh and Anita Kumari
6. Conclusion
30 40 50 60 70 80 90 100
Frequency [GHz]
S-Parameters [dB] in OFF State
Retu
rn L
oss [
dB
]
Return Loss (S )11
Isolation (S )21
20
Iso
lati
on
[d
B]
00
-10
-20
-30
-40
-50
-60
-0.10
-0.15
-0.20
-0.25
-0.30
-0.35
-0.40
S-Parameters [dB] in ON State
Re
turn
Lo
ss
[d
B]
Insertion Loss (S )21
Return Loss (S )11
Ins
ert
ion
Lo
ss
[d
B]
30 40 50 60 70 80 90 100
Frequency [GHz]
20
-20
-25
-30
-35
-40
-45
-50
-0.03
-0.06
-0.09
-0.12
-0.15
-0.18
-0.21
Design and modeling of a robust wideband Poly-Si and Au based capacitive RF MEMS switch for millimeter wave applications
References
IEEE Microwave Guided Wave Letters
IEEE Microwave Magazine IEEE Transactions on Components
Packaging and Technologies Applied Microwave and Wireless IEEE International
Microwave Symposium Digest Journal of
Microelectromechanical Systems IEEE International Microwave
Symposium Digest Proceedings of IEEE GaAs Symposium
Digest
Transactions on Electrical and Electronic Materials
IEEE Transactions on Microwave Theory and Techniques
Proceedings of the 10th IEEE International Workshop on Microelectromechanical Systems
IEEE Transactions on Microwave Theory and Techniques
Transactions on Electrical and Electronic Materials
Index
A
Actuation voltage for RF MEMS switchs
specifications, 110–111
C
Coplanar waveguide (CPW), 109
CPW. see Coplanar waveguide (CPW)
D
Design and operation principle
CPW, 109
designed membrane and meanders, dimensions, 110
Poly-Si and Au layered membrane close-up view, 109
wideband robust capacitive RF MEMS switch, 109
M
Microelectromechanical systems (MEMS), 108
R
Radio-frequency (RF) microelectromechanical systems (MEMS) switches
actuation voltage, 110–111
design and operation principle, 109–110
mechanical stress analysis using FEM, 111–112
RF performance analysis, 112–113
spring constant analysis, 110–111
RF MEMS switches. see Radio-frequency (RF) microelectromechanical systems
(MEMS) switches
RF performance analysis for RF MEMS switches
S-parameters, 112
typical values for, 113
S
Spring constant analysis for RF MEMS switchs, 111