Studies of SiPM Studies of SiPM @ Padova@ Padova
Perugia 16 June 2009 Flavio Dal Corso INFN-Padova 1
Plans & ObjectivesPlans & Objectives
Characterization of Silicon Photo Multipliers of different manufacturers and geometries:g
CurrentsGain & Efficiency yDark RateTime resolutionm r so ut onLong term stability……
Search for the best working point.Comparison of performances
Flavio Dal Corso INFN-Padova 2Perugia 16 June 2009
Comparison of performances.
SiPM are very sensitive to temperature y p⇒
Measurements must be performed in a pthermostatic chamber.
Cooling element Range: 10 – 40 °C
Precision: 1/16 °C(peltier) Precision: 1/16 C
improvement
heating resistor
improvement
g
Control unit SiPM box
Flavio Dal Corso INFN-Padova 3Perugia 16 June 2009
Devices Availableid nome caratteristiche
I(V) Gain Dark Rate Current Stablity
Current vs laser intensity
time resolution note
id 1 SiPM1 1 mm2 Ok I prototipi FBK:abbandonatiid 2 SiPM2 1 2 Ok I t ti i FBK bb d tiid 2 SiPM2 1 mm2 Ok I prototipi FBK:abbandonatiid 3 SiPM3 1 mm2 Ok I prototipi FBK:abbandonatiid 4 SiPM4 1 mm2 Ok I prototipi FBK:abbandonatiid 5 SiPM5 1 mm2 Ok I prototipi FBK:abbandonatiid 6 SiPM 40-I 1 mm2 625 pixel 40x40 II prototipi FBKid 7 SiPM 40-II 1 mm2 625 pixel 40x40 II prototipi FBKid 8 SiPM 40 III 1 2 625 i l 40 40 II t ti i FBKid 8 SiPM 40-III 1 mm2 625 pixel 40x40 II prototipi FBKid 9 SiPM 40-IV 1 mm2 625 pixel 40x40 Ok Ok da comp. poco II prototipi FBK. Ceduto a Evgeniy Kravchenko id 10 SiPM 50-I 1 mm2 400 pixel 50x50 Ok Ok Ok II prototipi FBKid 11 SiPM 50-II 1 mm2 400 pixel 50x50 II prototipi FBKid 12 SiPM 50-III 1 mm2 400 pixel 50x50 II prototipi FBKid 13 SiPM 50-IV 1 mm2 400 pixel 50x50 da comp. Ok Ok da comp. II prototipi FBK
S 1 2 100 i l 100 100 O O O O Oid 14 SiPM 100-I 1 mm2 100 pixel 100x100 Ok Ok Ok Ok Ok II prototipi FBKid 15 SiPM 100-II 1 mm2 100 pixel 100x100 Ok male Ok male II prototipi FBKid 16 MPPC 25U-355 1 mm2 1600 pixel 25x25 Hamamatsuid 17 MPPC 25U-356 1 mm2 1600 pixel 25x25 Hamamatsuid 18 MPPC 50U-old 1 mm2 400 pixel 50x50 male Hamamatsuid 19 MPPC 50U-503 1 mm2 400 pixel 50x50 Ok male Hamamatsu. Ceduto a Evgeniy Kravchenko
2id 20 MPPC 50C-719 1 mm2 400 pixel 50x50 Hamamatsuid 21 MPPC 100U-318 1 mm2 100 pixel 100x100 Ok NO Ok poco Hamamatsuid 22 MPPC 100U-319 1 mm2 100 pixel 100x100 Hamamatsuid 23 MPPC 100P-66 9 mm2 900 pixel 100x100 Ok NO Ok Hamamatsuid 24 CPTA 149-35 4,41 mm2 1746 pixel 50x50 Ok Ok Ok Ok Ok from CPTA (da Evgeniy Kravchenko )
Green: measurement done
Yellow: not completed
Flavio Dal Corso INFN-Padova 4Perugia 16 June 2009
Red: tried unsuccessfully
Devices CharacterizationC t Vbi & T tCurrent vs Vbias & Temperature
SiPM 40 IV
SiPM (FBK)I(V) curves very regular 1,E-06
1,E-05
1,E-04
)
10°C
15°C
Low and linear T dependenceQuite high I (≈ few μA) at working point
1,E-09
1,E-08
1,E-07
Cur
rent
(A) 20°C
25°C
30°C
35°C
40°C
working point SiPM 50 I
1,E-04
1,E-1030 31 32 33 34 35 36 37 38 39 40
Vbias (V)
SiPM 100 I
1,E-06
1,E-05
30 32 34 36 38 40
10°C15°C1,E-06
1,E-05
1,E-0430 30,5 31 31,5 32 32,5 33 33,5 34 34,5 35
10°C15°C
1,E-08
1,E-07A
15 C20°C25°C30°C35°C1,E-08
1,E-07
,
A
20°C23°C24°C25°C30°C35°C
Flavio Dal Corso INFN-Padova 5Perugia 16 June 20091,E-10
1,E-09
V
1,E-10
1,E-09
V
Devices CharacterizationD zCurrent vs Vbias & Temperature
MPPC (Hmamatsu):I(V) curves quite “irregular”
h d l
MPPC 50 503
1,E-04
Higher and non-linear T dependence Lower current (≤ 1 μA)1,E-08
1,E-07
1,E-06
1,E-05
Cur
rent
(A)
10°C15°C20°C
25°C30°C Lower current (≤ 1 μA)
1,E-12
1,E-11
1,E-10
1,E-09
65 66 67 68 69 70 71
Vbias (V)
C
35°C40°C
Vbias (V)
MPPC 100 318
1,E-04
1,E-0365 66 67 68 69 70 71
MPPC 100P 66
1,E-05
1,E-0467 68 69 70 71 72 73
1 E 09
1,E-08
1,E-07
1,E-06
1,E-05
A
101520253035
1,E-08
1,E-07
1,E-06
A
10,11520253034,8
Flavio Dal Corso INFN-Padova 6Perugia 16 June 20091,E-12
1,E-11
1,E-10
1,E-09
mV
40
1,E-11
1,E-10
1,E-09
mV
39,8
Devices CharacterizationGainGain
SiPM 50 I
36 734 1169 1 (20^C)
y = 36.185x - 1126 (10^C)
y = 35.868x - 1128 (15^C)140SiPM (FBK)
y = 35.718x - 1147.7 (25^C)
y = 36.734x - 1169.1 (20^C)
y = 34.91x - 1133.7 (30^C)
y = 34.418x - 1128.9 (35^C)
80
100
120
10°C gain (mV/g)
15°C gain (mV/g)
Characteristics very linear, both G(V) and G(T).G(V Vo) doesn't depend on T
20
40
60mV
20°C gain (mV/g)
25°C gain (mV/g)
30°C gain (mV/g)
35°C gain (mV/g)
Lineare (25°C gain(mV/g))Lineare (20°C gain( V/ ))
G(V-Vo) doesn t depend on T(Vo = V @ G=0) ⇒ absolute definition of “Working Point”
-20
031 32 33 34 35 36 37 38 39
V
(mV/g))Lineare (10°C gain(mV/g))Lineare (15°C gain(mV/g))Lineare (30°C gain(mV/g))Lineare (35°C gain(mV/g))
(no gain measurement performed on MPPC up to now)
SiPM 50 1SiPM_40x40_IV
12.0
14.0
16.0
33.4
33.8
34.2
34.6
35100
120
140
10°C
4 0
6.0
8.0
10.0G
ain
(mV
/ γ) 35.4
39
Lineare (35.4)
Lineare (35)
Lineare (34.6)
40
60
80
Gai
n(m
V/e) 15°C
20°C25°C30°C35°C
Flavio Dal Corso INFN-Padova 7Perugia 16 June 2009
2.0
4.0
5 10 15 20 25 30 35 40
Temperature (°C)
Lineare (34.2)
Lineare (33.8)
Lineare (33.4)
0
20
0 1 2 3 4 5 6 7
V-V(0)
Dark Rates SiPM_50x50_IV
10
100
1000
10000
Rat
e (K
Hz) 33V 15°C
34V 15°C
35V 15°C
SiPM_50x50_IV
1000
10000
0.5g 33V
0 5g 34V
SiPM_50x50_IV
0.01
0.1
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Threshold (# of photons)
Dar
k
1
10
100
Dar
k R
ate
(KH
z)
0.5g 34V
0.5g 35V
1.5g 33V
1.5g 34V
1.5g 35V
2.5g 33V
2.5g 34V
0.1
1
10
100
1000
10000
Dar
k R
ate
(KH
z) 33V 20°C
34V 20°C
35V 20°C
0.01
0.1
14 16 18 20 22 24 26
Temperature (°C)
2.5g 35V
SiPM_50x50_IV
1000
10000
0.010.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Threshold (# of photons) SiPM (FBK)Almost flat vs temperature
0.01
0.1
1
10
100
1000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Threshold (# of photons)
Dar
k R
ate
(KH
z) 33V 25°C
34V 25°C
35V 25°C Dark rate decrease very quickly with threshold,
Flavio Dal Corso INFN-Padova 8Perugia 16 June 2009
Threshold (# of photons)
Dark RatesC iComparisons
Moderate dependence on dark Rate SiPM 50 I @ 25°C
geometry (SiPM50 ≈ SiPM100)
MPPC less noisy than SiPMt 1 i t 2
dark Rate SiPM 50 I @ 25 C
100
1000
10000
33 V at 1 γ, more noisy at ≥ 2 γ(but a better comparison will require some normalization wrt gain, 0,1
1
10
0 50 100 150 200 250 300
KHZ
33 V34 V35 V36 V37 V
efficiency etc…)0,01
Vthr (mV)
Dark Rate SiPM 100 I @25°CDark Rate MPPC 100U-318 @ 25°C
10000
100
1000
10000
33 5V 25°C
100
1000
10000
69V 25°C
0,1
1
10
0 200 400 600 800 1000 1200
KHz
33.5V 25 C34V 25°C34.5V 25°C
0,1
1
10
0 200 400 600 800 1000 1200
kHz
69.5V 25°C
70V 25°C
Flavio Dal Corso INFN-Padova 9Perugia 16 June 2009
0,01
Vthr (mV)
0,01
mV
Devices CharacterizationR C biliReverse Current Stability
SiPM 100 I Current Stability @ 20°C
FBK devices show jumps fluctuations
1 725E-06
1,730E-06
1,735E-06
1,740E-06
1,745E-06
1,750E-06
Cur
(A)
FBK devices show jumps, fluctuations, slow drifts.Impacts on dark rate, gain, device life?
SiPM 40 IV Current Stability @ 25°C
1,715E-06
1,720E-06
1,725E 06
0 86400 172800 259200 345600 432000 518400 604800 691200
sec
Hamamatsu devices seem more stable.Very preliminary results (few devices measured, influence from environment?)
MPPC 100U-318 current stability4 690E 064,700E-064,710E-064,720E-064,730E-064,740E-064,750E-064,760E-06
815
820
8254,670E-064,680E-064,690E-06
0
3600
7200
1080
0
1440
0
1800
0
2160
0
2520
0
2880
0
3240
0
3600
0
3960
0
4320
0
4680
0
5040
0
5400
0
5760
0
6120
0
sec
Current stability SiPM 50 I
795
800
805
810nA
1540
1545
1550
1555
1560
1565
nA
Flavio Dal Corso INFN-Padova 10Perugia 16 June 2009
785
790
0 86400 172800 259200 345600
sec1515
1520
1525
1530
1535
0 86400 172800 259200 345600 432000
sec
CPTA 149 35CPTA 149-35
1,E-05
1,E-0430 32 34 36 38 40 42 44
10°C
1,E-07
1,E-06
A
10°C15°C20°C25°C30°C35°C
I(V) h t i ti 1,E-09
1,E-08
V
I(V) characteristic very regular: stronger T dependence w r t SiPMDark Rate dependence w.r.t. SiPMQuite low reverse currentand Dark Rate
1000
10000
37V 20°C
38V 20°C and Dark Rate (comparable to 1mm2
devices)1
10
100KH
z 38V 20 C
39V 20°C
Flavio Dal Corso INFN-Padova 11Perugia 16 June 2009
10 10 20 30 40 50 60 70 80 90
mV
CPTA 149-35Gain
y = 2,3451x - 74,109y = 2,3433x - 74,332
18
y = 2,3122x - 74,302y = 2,3511x - 75,474
y = 2,2444x - 72,377
y = 2,359x - 75,282
12
14
16
mV
10°C15°C20°C25°C
Very good gainLess linear vs T at
8
10
m 25 C30°C35°CLineare (10°C)Lineare (15°C)Lineare (30°C)Lineare (25°C)Lineare (35°C)
high T ⇒ G(V-Vo) not completely independent from TCPTA gain
16
18
634 35 36 37 38 39 40
V
Lineare (35°C)Lineare (20°C) independent from T
12
14
16
(mV/
e)
10°C
15°C
20°C
8
10
12
Gai
n (
25°C
30°C
35°C
Flavio Dal Corso INFN-Padova 12Perugia 16 June 20096
2 3 4 5 6 7 8
V-Vo
PlPlans…R di i h d diRadiation hardness studies:next week a single SIPM will be irradiated with ≈ 1 MeV neutron at LNLMeV neutron at LNLWorks in progress :
Characterization of all devicesAbsolute efficiency measurementsTime resolution measurementsElectronics optimization : Electronics optimization :
- higher amplification - s/n improvements (studies of charge integrating ADC vs peak sensing ADC)peak sensing ADC)
Procurement of FBK devices ≈ 15x15 mm2 (array of 8x8 SiPM, 1.5x1.5 mm2 each, on a single chip)
Flavio Dal Corso INFN-Padova 13Perugia 16 June 2009