studies of sipm @ padova...id 7 sipm 40-ii 1 mm2 625 pixel 40x40 ii prototipi fbk id 8id 8 sipm 40...

Studies of SiPM Studies of SiPM @ Padova@ Padova

Perugia 16 June 2009 Flavio Dal Corso INFN-Padova 1

Plans & ObjectivesPlans & Objectives

Characterization of Silicon Photo Multipliers of different manufacturers and geometries:g

CurrentsGain & Efficiency yDark RateTime resolutionm r so ut onLong term stability……

Search for the best working point.Comparison of performances

Flavio Dal Corso INFN-Padova 2Perugia 16 June 2009

Comparison of performances.

SiPM are very sensitive to temperature y p⇒

Measurements must be performed in a pthermostatic chamber.

Cooling element Range: 10 – 40 °C

Precision: 1/16 °C(peltier) Precision: 1/16 C

improvement

heating resistor

improvement

g

Control unit SiPM box


Devices Availableid nome caratteristiche

I(V) Gain Dark Rate Current Stablity

Current vs laser intensity

time resolution note

id 1 SiPM1 1 mm2 Ok I prototipi FBK:abbandonatiid 2 SiPM2 1 2 Ok I t ti i FBK bb d tiid 2 SiPM2 1 mm2 Ok I prototipi FBK:abbandonatiid 3 SiPM3 1 mm2 Ok I prototipi FBK:abbandonatiid 4 SiPM4 1 mm2 Ok I prototipi FBK:abbandonatiid 5 SiPM5 1 mm2 Ok I prototipi FBK:abbandonatiid 6 SiPM 40-I 1 mm2 625 pixel 40x40 II prototipi FBKid 7 SiPM 40-II 1 mm2 625 pixel 40x40 II prototipi FBKid 8 SiPM 40 III 1 2 625 i l 40 40 II t ti i FBKid 8 SiPM 40-III 1 mm2 625 pixel 40x40 II prototipi FBKid 9 SiPM 40-IV 1 mm2 625 pixel 40x40 Ok Ok da comp. poco II prototipi FBK. Ceduto a Evgeniy Kravchenko id 10 SiPM 50-I 1 mm2 400 pixel 50x50 Ok Ok Ok II prototipi FBKid 11 SiPM 50-II 1 mm2 400 pixel 50x50 II prototipi FBKid 12 SiPM 50-III 1 mm2 400 pixel 50x50 II prototipi FBKid 13 SiPM 50-IV 1 mm2 400 pixel 50x50 da comp. Ok Ok da comp. II prototipi FBK

S 1 2 100 i l 100 100 O O O O Oid 14 SiPM 100-I 1 mm2 100 pixel 100x100 Ok Ok Ok Ok Ok II prototipi FBKid 15 SiPM 100-II 1 mm2 100 pixel 100x100 Ok male Ok male II prototipi FBKid 16 MPPC 25U-355 1 mm2 1600 pixel 25x25 Hamamatsuid 17 MPPC 25U-356 1 mm2 1600 pixel 25x25 Hamamatsuid 18 MPPC 50U-old 1 mm2 400 pixel 50x50 male Hamamatsuid 19 MPPC 50U-503 1 mm2 400 pixel 50x50 Ok male Hamamatsu. Ceduto a Evgeniy Kravchenko

2id 20 MPPC 50C-719 1 mm2 400 pixel 50x50 Hamamatsuid 21 MPPC 100U-318 1 mm2 100 pixel 100x100 Ok NO Ok poco Hamamatsuid 22 MPPC 100U-319 1 mm2 100 pixel 100x100 Hamamatsuid 23 MPPC 100P-66 9 mm2 900 pixel 100x100 Ok NO Ok Hamamatsuid 24 CPTA 149-35 4,41 mm2 1746 pixel 50x50 Ok Ok Ok Ok Ok from CPTA (da Evgeniy Kravchenko )

Green: measurement done

Yellow: not completed


Red: tried unsuccessfully

Devices CharacterizationC t Vbi & T tCurrent vs Vbias & Temperature

SiPM 40 IV

SiPM (FBK)I(V) curves very regular 1,E-06

1,E-05

1,E-04

)

10°C

15°C

Low and linear T dependenceQuite high I (≈ few μA) at working point

1,E-09

1,E-08

1,E-07

Cur

rent

(A) 20°C

25°C

30°C

35°C

40°C

working point SiPM 50 I

1,E-04

1,E-1030 31 32 33 34 35 36 37 38 39 40

Vbias (V)

SiPM 100 I

1,E-06

1,E-05

30 32 34 36 38 40

10°C15°C1,E-06

1,E-05

1,E-0430 30,5 31 31,5 32 32,5 33 33,5 34 34,5 35

10°C15°C

1,E-08

1,E-07A

15 C20°C25°C30°C35°C1,E-08

1,E-07

,

A

20°C23°C24°C25°C30°C35°C

Flavio Dal Corso INFN-Padova 5Perugia 16 June 20091,E-10

1,E-09

V

1,E-10

1,E-09

V

Devices CharacterizationD zCurrent vs Vbias & Temperature

MPPC (Hmamatsu):I(V) curves quite “irregular”

h d l

MPPC 50 503

1,E-04

Higher and non-linear T dependence Lower current (≤ 1 μA)1,E-08

1,E-07

1,E-06

1,E-05

Cur

rent

(A)

10°C15°C20°C

25°C30°C Lower current (≤ 1 μA)

1,E-12

1,E-11

1,E-10

1,E-09

65 66 67 68 69 70 71

Vbias (V)

C

35°C40°C

Vbias (V)

MPPC 100 318

1,E-04

1,E-0365 66 67 68 69 70 71

MPPC 100P 66

1,E-05

1,E-0467 68 69 70 71 72 73

1 E 09

1,E-08

1,E-07

1,E-06

1,E-05

A

101520253035

1,E-08

1,E-07

1,E-06

A

10,11520253034,8

Flavio Dal Corso INFN-Padova 6Perugia 16 June 20091,E-12

1,E-11

1,E-10

1,E-09

mV

40

1,E-11

1,E-10

1,E-09

mV

39,8

Devices CharacterizationGainGain

SiPM 50 I

36 734 1169 1 (20^C)

y = 36.185x - 1126 (10^C)

y = 35.868x - 1128 (15^C)140SiPM (FBK)

y = 35.718x - 1147.7 (25^C)

y = 36.734x - 1169.1 (20^C)

y = 34.91x - 1133.7 (30^C)

y = 34.418x - 1128.9 (35^C)

80

100

120

10°C gain (mV/g)

15°C gain (mV/g)

Characteristics very linear, both G(V) and G(T).G(V Vo) doesn't depend on T

20

40

60mV

20°C gain (mV/g)

25°C gain (mV/g)

30°C gain (mV/g)

35°C gain (mV/g)

Lineare (25°C gain(mV/g))Lineare (20°C gain( V/ ))

G(V-Vo) doesn t depend on T(Vo = V @ G=0) ⇒ absolute definition of “Working Point”

-20

031 32 33 34 35 36 37 38 39

V

(mV/g))Lineare (10°C gain(mV/g))Lineare (15°C gain(mV/g))Lineare (30°C gain(mV/g))Lineare (35°C gain(mV/g))

(no gain measurement performed on MPPC up to now)

SiPM 50 1SiPM_40x40_IV

12.0

14.0

16.0

33.4

33.8

34.2

34.6

35100

120

140

10°C

4 0

6.0

8.0

10.0G

ain

(mV

/ γ) 35.4

39

Lineare (35.4)

Lineare (35)

Lineare (34.6)

40

60

80

Gai

n(m

V/e) 15°C

20°C25°C30°C35°C


2.0

4.0

5 10 15 20 25 30 35 40

Temperature (°C)

Lineare (34.2)

Lineare (33.8)

Lineare (33.4)

0

20

0 1 2 3 4 5 6 7

V-V(0)

Dark Rates SiPM_50x50_IV

10

100

1000

10000

Rat

e (K

Hz) 33V 15°C

34V 15°C

35V 15°C

SiPM_50x50_IV

1000

10000

0.5g 33V

0 5g 34V

SiPM_50x50_IV

0.01

0.1

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Threshold (# of photons)

Dar

k

1

10

100

Dar

k R

ate

(KH

z)

0.5g 34V

0.5g 35V

1.5g 33V

1.5g 34V

1.5g 35V

2.5g 33V

2.5g 34V

0.1

1

10

100

1000

10000

Dar

k R

ate

(KH

z) 33V 20°C

34V 20°C

35V 20°C

0.01

0.1

14 16 18 20 22 24 26

Temperature (°C)

2.5g 35V

SiPM_50x50_IV

1000

10000

0.010.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Threshold (# of photons) SiPM (FBK)Almost flat vs temperature

0.01

0.1

1

10

100

1000

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5


Dar

k R

ate

(KH

z) 33V 25°C

34V 25°C

35V 25°C Dark rate decrease very quickly with threshold,



Dark RatesC iComparisons

Moderate dependence on dark Rate SiPM 50 I @ 25°C

geometry (SiPM50 ≈ SiPM100)

MPPC less noisy than SiPMt 1 i t 2

dark Rate SiPM 50 I @ 25 C

100

1000

10000

33 V at 1 γ, more noisy at ≥ 2 γ(but a better comparison will require some normalization wrt gain, 0,1

1

10

0 50 100 150 200 250 300

KHZ

33 V34 V35 V36 V37 V

efficiency etc…)0,01

Vthr (mV)

Dark Rate SiPM 100 I @25°CDark Rate MPPC 100U-318 @ 25°C

10000

100

1000

10000

33 5V 25°C

100

1000

10000

69V 25°C

0,1

1

10

0 200 400 600 800 1000 1200

KHz

33.5V 25 C34V 25°C34.5V 25°C

0,1

1

10

0 200 400 600 800 1000 1200

kHz

69.5V 25°C

70V 25°C


0,01

Vthr (mV)

0,01

mV

Devices CharacterizationR C biliReverse Current Stability

SiPM 100 I Current Stability @ 20°C

FBK devices show jumps fluctuations

1 725E-06

1,730E-06

1,735E-06

1,740E-06

1,745E-06

1,750E-06

Cur

(A)

FBK devices show jumps, fluctuations, slow drifts.Impacts on dark rate, gain, device life?

SiPM 40 IV Current Stability @ 25°C

1,715E-06

1,720E-06

1,725E 06

0 86400 172800 259200 345600 432000 518400 604800 691200

sec

Hamamatsu devices seem more stable.Very preliminary results (few devices measured, influence from environment?)

MPPC 100U-318 current stability4 690E 064,700E-064,710E-064,720E-064,730E-064,740E-064,750E-064,760E-06

815

820

8254,670E-064,680E-064,690E-06

0

3600

7200

1080

0

1440

0

1800

0

2160

0

2520

0

2880

0

3240

0

3600

0

3960

0

4320

0

4680

0

5040

0

5400

0

5760

0

6120

0

sec

Current stability SiPM 50 I

795

800

805

810nA

1540

1545

1550

1555

1560

1565

nA


785

790

0 86400 172800 259200 345600

sec1515

1520

1525

1530

1535

0 86400 172800 259200 345600 432000

sec

CPTA 149 35CPTA 149-35

1,E-05

1,E-0430 32 34 36 38 40 42 44

10°C

1,E-07

1,E-06

A

10°C15°C20°C25°C30°C35°C

I(V) h t i ti 1,E-09

1,E-08

V

I(V) characteristic very regular: stronger T dependence w r t SiPMDark Rate dependence w.r.t. SiPMQuite low reverse currentand Dark Rate

1000

10000

37V 20°C

38V 20°C and Dark Rate (comparable to 1mm2

devices)1

10

100KH

z 38V 20 C

39V 20°C


10 10 20 30 40 50 60 70 80 90

mV

CPTA 149-35Gain

y = 2,3451x - 74,109y = 2,3433x - 74,332

18

y = 2,3122x - 74,302y = 2,3511x - 75,474

y = 2,2444x - 72,377

y = 2,359x - 75,282

12

14

16

mV

10°C15°C20°C25°C

Very good gainLess linear vs T at

8

10

m 25 C30°C35°CLineare (10°C)Lineare (15°C)Lineare (30°C)Lineare (25°C)Lineare (35°C)

high T ⇒ G(V-Vo) not completely independent from TCPTA gain

16

18

634 35 36 37 38 39 40

V

Lineare (35°C)Lineare (20°C) independent from T

12

14

16

(mV/

e)

10°C

15°C

20°C

8

10

12

Gai

n (

25°C

30°C

35°C


2 3 4 5 6 7 8

V-Vo

PlPlans…R di i h d diRadiation hardness studies:next week a single SIPM will be irradiated with ≈ 1 MeV neutron at LNLMeV neutron at LNLWorks in progress :

Characterization of all devicesAbsolute efficiency measurementsTime resolution measurementsElectronics optimization : Electronics optimization :

- higher amplification - s/n improvements (studies of charge integrating ADC vs peak sensing ADC)peak sensing ADC)

Procurement of FBK devices ≈ 15x15 mm2 (array of 8x8 SiPM, 1.5x1.5 mm2 each, on a single chip)


studies of sipm @ padova...id 7 sipm 40-ii 1 mm2 625 pixel 40x40 ii prototipi fbk id 8id 8 sipm 40...

Documents