e.a. preble, z. reitmeier, s. einfeldt, r.f. davis north carolina state university
DESCRIPTION
SiC influence on x-ray measurements of GaN films compared with photoluminescence and electrical data. E.A. Preble, Z. Reitmeier, S. Einfeldt, R.F. Davis North Carolina State University D.S. Katzer, H Dietrich Naval Research Labs Ulrich Schwartz Universität Regensburg February 12, 2002. - PowerPoint PPT PresentationTRANSCRIPT
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Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors
NC STATE UNIVERSITY UCSB
SiC influence on x-ray measurements of GaN films compared with
photoluminescence and electrical data
E.A. Preble, Z. Reitmeier, S. Einfeldt, R.F. DavisNorth Carolina State University
D.S. Katzer, H DietrichNaval Research Labs
Ulrich SchwartzUniversität Regensburg
February 12, 2002
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Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors
NC STATE UNIVERSITY UCSB
Topics of discussion
• Background– SiC wafer variability– SiC influence on GaN x-ray data
• Wafer mapping as a solution to SiC influence– Extraction of reliable and repeatable x-ray data
• Do x-ray map results correlate to PL and electrical results?
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Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors
NC STATE UNIVERSITY UCSB
Typical SiC Wafers
SiC FWHM
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Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors
NC STATE UNIVERSITY UCSB
SiC XRD correlation with GaN XRD
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Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors
NC STATE UNIVERSITY UCSB
SiC/GaN FWHM Relationship
GaN FWHM not
influenced by SiC
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Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors
NC STATE UNIVERSITY UCSB
GaN Thickness Data
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Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors
NC STATE UNIVERSITY UCSB
AlN Buffer Layer Changes
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Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors
NC STATE UNIVERSITY UCSB
AlN vs AlGaN Buffer Layers
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Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors
NC STATE UNIVERSITY UCSB
PL maps vs. X-ray maps
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Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors
NC STATE UNIVERSITY UCSB
Electrical results – Mobility vs Resistivity
Mobility vs. Resistivity
300
320
340
360
380
400
420
3.5E-02 4.5E-02 5.5E-02 6.5E-02 7.5E-02
Resistivity (ohm/cm^2)
Mo
bilt
iy (
cm
^2
/V.s
)
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Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors
NC STATE UNIVERSITY UCSB
Electrical results – Mobility vs Bulk Carrier Concentration
Mobility vs. Bulk Carrier Concentration
300
320
340
360
380
400
420
2.7E+17 2.9E+17 3.1E+17 3.3E+17 3.5E+17 3.7E+17
Carrier Concentration (cm^-3)
Mo
bili
ty (
cm
^2
/V.s
)
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Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors
NC STATE UNIVERSITY UCSB
Electrical results – Mobility
Mobility vs. FWHM
300
320
340
360
380
400
420
250 350 450 550 650
GaN (00.2) FWHM (arcsec)
Mo
bili
ty (
cm
^2
/V.s
)
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Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors
NC STATE UNIVERSITY UCSB
Electrical results – ResistivityResistivity vs. FWHM
3.5E-02
4.0E-02
4.5E-02
5.0E-02
5.5E-02
6.0E-02
6.5E-02
7.0E-02
7.5E-02
250 350 450 550 650
GaN (00.2) FWHM (arcsec)
Re
sis
tiv
ity
(o
hm
.cm
)
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Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors
NC STATE UNIVERSITY UCSB
Electrical results – Carrier Concentration
Bulk Carrier Concentration vs. FWHM
2.7E+17
2.9E+17
3.1E+17
3.3E+17
3.5E+17
3.7E+17
250 350 450 550 650
GaN (00.2) FWHM (arcsec)
Ca
rrie
r C
on
ce
ntr
ati
on
(c
m^
-3)
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Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors
NC STATE UNIVERSITY UCSB
Why isn’t there a correlation?
• XRD vs PL– X-ray measurements are bulk measurements– PL measurements are more localized– Correlations are not found because of scale difference
• XRD vs Electrical Data– Both measurements are large area– Electrical results are not sensitive to domain tilting that is
observed via XRD– This x-ray technique is not useful in prediction of electrical
results