ecal si sensors status and plans may 2006
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ECAL Si sensors status and plans May 2006. V.Vrba. Status. EUDET prototype : end of 2005: production of 20 wafers produced at ON Semiconductor, tested at Prague good quality; beginning of 2006: wafers delivered to Ecole Polytechnique – no report about any problem;. : - PowerPoint PPT PresentationTRANSCRIPT
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CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS
CR
ECAL Si sensors status and plansMay 2006
V.Vrba
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CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS
CR
StatusEUDET prototype: end of 2005: production of 20 wafers produced at ON Semiconductor, tested at Prague good quality; beginning of 2006: wafers delivered to Ecole Polytechnique – no report about any problem;
: April 2006: ordered next batch of about 60 wafers at On Semiconductor to be ready ~ June 5, then measured and delivered to Ecole Polytechnique ~ June 15 waiting for news from news from Ecole Polytechnique; looking forward for new delivery from ON Semiconductor.
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CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS
CR
Recent developments4x4 pad sensor array produced @ONSemiconductor with poly-silicon resistors
Layout of components on the wafer :
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CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS
CR4
I-V and C-V on single diodes
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CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS
CR5
I-V curves for 4x4 pad array
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CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS
CR6
Reverse current long term stability
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CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS
CR7
Polysilicon resistors
: Polysilicon resistors ~ 1.2MOhm +/- ~30% can be improved by optimization of resistor shape (minimize fluctuationd due to etching), better tuning of lithography etc.
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CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS
CR
Plans (1)New design: smaller size: from 10 mm pitch to ~ 5 mm pitch; different shapes: hexagonal shape gives better two-dimensional resolution then square shape (by approx 30%) – or – the same resolution with less number of electronic channels;
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CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS
CR
Plans (2)Precision layer (s ?): better determination of the shower position, shower disentangling etc; pre-shower layer? needs simulation for optimal position and cell size for the given detector spatial configuration.
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CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS
CR10
Investigation of possibility of use of 6“ wafers
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CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS
CR11
Summary
: production of wafers for EUDET module in progress shall be in time; proved possibility of fabrication of integrated bias resistors no visible reduction of production yield; studies of fine granularity, different pad shape, precision layer, pre-shower layer are in progress; possibility of the use of 6” wafers is also investigated.
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CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS
CR12
Sensor probing @ Institute of Physics
V r. 2006: testování cca 30-40% dodatečné produkce senzorů.
Pracoviště pro měření pixelových detektorů ve Fyzikálním ústavu
Senzory vyrobené v ON Semiconductor CR (dříve TESLA Sezam)