ee 206 analysis of microelectronic circuits and devices...

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ECTS COURSE INFORMATION FORM Faculty Faculty of Engineering B.Sc. in Computer Engineering Elective B.Sc. in Electrical-Electronics Engineering Required B.Sc. in Mechanical Engineering Elective Course Code EE 206 Course Title in English Analysis of Microelectronic Circuits and Devices Course Title in Turkish Mikroelektronik Devre ve Cihaz Analizi Language of Instruction English Type of Course Flipped Classroom/Laboratory Level of Course Undergraduate Course Category (by % of Content) Basic Science Basic Engineering Engineering Design General Education 10 70 20 - Semester Offered Spring Contact Hours per Week Lecture: 3 hours Recitation: - Lab: 2 hours Other:- Estimated Student Workload 173 hours per semester Number of Credits 7 ECTS Grading Mode Standard Letter Grade Pre-requisites EE 201 Expected Prior Knowledge Basic knowledge in the components and characteristics of electric circuits, and the circuit analysis techniques are expected. Co-requisites None Registration Restrictions Only Undergraduate Students Overall Educational Objective To learn the behavior of semi-conductor electronic devices and their terminal characteristics, and how to bias these devices and how to analyze analog circuits employing these devices Course Description This course provides a comprehensive analysis of microelectronic circuits and devices. The following topics are covered: semi-conductor basics: concepts and semi-conductor components; semiconductor diode: physical structure, terminal characteristics, analysis of diode circuits; Bipolar Junction Transistor (BJT): physical structure and operating modes, BJT as a switch, DC biasing, BJT as an amplifier, small-signal model, basic amplifier circuits; MOSFET: structure and operating modes, MOSFET as a switch, MOSFET amplifiers; Operational amplifiers: concepts and application examples. Course Description in Turkish Bu ders mikroelektronik devre ve cihazların tam olarak analizini sağlamaktadır Aşağıdaki konular kapsanacaktır: yarıiletkenlerle ilgili kavramlar ve yarıiletken elemanlar; yarıiletken diyot: fiziksel yapı, uç karakteristikleri, diyotlu devreler; Bipolar Jonksiyonlu Transistör (BJT): yapısı ve türleri, anahtar olarak çalışma, kutuplama, kuvvetlendiriciler, küçük işaret analizi; MOSFET: yapısı ve türleri, anahtar olarak çalışma ve MOSFET li kuvvetlendiriciler; İşlemsel kuvvetlendiriciler ve uygulama örnekleri. Course Learning Outcomes and Competences Upon successful completion of the course, the learner is expected to: 1. identify the basic physical behavior of semi-conductor electronic devices; 2. distinguish the terminal characteristics of semi-conductor electronic devices; 3. comprehend how to bias semi-conductor electronic devices; 4. analyze and design basic electronic circuits employing semi-conductor electronic devices; 5. construct electric circuits in the laboratory and analyze these circuits by making measurements.

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ECTS COURSE INFORMATION FORM

Faculty Faculty of Engineering B.Sc. in Computer Engineering Elective

B.Sc. in Electrical-Electronics Engineering Required B.Sc. in Mechanical Engineering Elective

Course Code EE 206 Course Title in English Analysis of Microelectronic Circuits and Devices Course Title in Turkish Mikroelektronik Devre ve Cihaz Analizi Language of Instruction English Type of Course Flipped Classroom/Laboratory

Level of Course Undergraduate Course Category (by % of Content)

Basic Science Basic Engineering Engineering Design General Education 10 70 20 -

Semester Offered Spring Contact Hours per Week Lecture: 3 hours Recitation: - Lab: 2 hours Other:- Estimated Student Workload

173 hours per semester

Number of Credits 7 ECTS Grading Mode Standard Letter Grade Pre-requisites EE 201

Expected Prior Knowledge

Basic knowledge in the components and characteristics of electric circuits, and the circuit analysis techniques are expected.

Co-requisites None Registration Restrictions Only Undergraduate Students Overall Educational Objective

To learn the behavior of semi-conductor electronic devices and their terminal characteristics, and how to bias these devices and how to analyze analog circuits employing these devices

Course Description This course provides a comprehensive analysis of microelectronic circuits and devices. The following topics are covered: semi-conductor basics: concepts and semi-conductor components; semiconductor diode: physical structure, terminal characteristics, analysis of diode circuits; Bipolar Junction Transistor (BJT): physical structure and operating modes, BJT as a switch, DC biasing, BJT as an amplifier, small-signal model, basic amplifier circuits; MOSFET: structure and operating modes, MOSFET as a switch, MOSFET amplifiers; Operational amplifiers: concepts and application examples.

Course Description in Turkish

Bu ders mikroelektronik devre ve cihazların tam olarak analizini sağlamaktadır Aşağıdaki konular kapsanacaktır: yarıiletkenlerle ilgili kavramlar ve yarıiletken elemanlar; yarıiletken diyot: fiziksel yapı, uç karakteristikleri, diyotlu devreler; Bipolar Jonksiyonlu Transistör (BJT): yapısı ve türleri, anahtar olarak çalışma, kutuplama, kuvvetlendiriciler, küçük işaret analizi; MOSFET: yapısı ve türleri, anahtar olarak çalışma ve MOSFET li kuvvetlendiriciler; İşlemsel kuvvetlendiriciler ve uygulama örnekleri.

Course Learning Outcomes and Competences

Upon successful completion of the course, the learner is expected to: 1. identify the basic physical behavior of semi-conductor electronic devices; 2. distinguish the terminal characteristics of semi-conductor electronic devices; 3. comprehend how to bias semi-conductor electronic devices; 4. analyze and design basic electronic circuits employing semi-conductor electronic devices; 5. construct electric circuits in the laboratory and analyze these circuits by making

measurements.

Relationship of the Course with the Student Outcomes Level Learning Outcome(s) Assessed by

Student Outcomes N=None

S=Supportive H=High

Exam, Project, HW,

Experiment, Presentation,

etc. (a) an ability to apply knowledge of mathematics, science, and engineering H 1,2,3,4 Exams,

Homework

(b) an ability to design and conduct experiments, as well as to analyze and interpret data

(b)-1. an ability to design/develop an experiment by identifying required assumptions, constraints, data collection methods and models

(b)-2. Implement experimental procedures to conduct an experiment and use engineering judgment to draw conclusions

H 5 Labs

(c) an ability to design a system, component, or process to meet desired needs within realistic constraints such as economic, environmental, social, political, ethical, health and safety, manufacturability, and sustainability

S 4,5 Labs

(d) an ability to function on multidisciplinary teams

(d)-1. Function effectively on a intradisciplinary team

(d)-2. Function effectively on a multidisciplinary team

(e) an ability to identify, formulate, and solve engineering problems H 1,2,3,4,5

Exams, Homework,

Labs (f) an understanding of professional and ethical responsibility (g) an ability to communicate effectively (g)-1. Communicate effectively with well-organized written

documents S 5 Lab Reports

(g)-2. Communicate effectively verbally with a range of audiences

(h) the broad education necessary to understand the impact of engineering solutions in a global, economic, environmental, and societal context

(i) a recognition of the need for, and an ability to engage in life-long learning

(j) a knowledge of contemporary issues

(k) an ability to use the techniques, skills, and modern engineering tools necessary for engineering practice

H 4 SPICE Homework

Prepared by and Date Prof. Engin Türe / January 2018 Semester Spring 2018-2019 Name of Instructor Prof. Engin Türe Course Contents Week Topic 1. Basic of semiconductor behavior, Conduction mechanisms, doping, drift and diffusion

mechanisms 2. Introduction, diode and its electrical behavior 3. Basics of pn junction, small signal model, AC analysis of diode circuits 4. Diode models, DC analysis of diode circuits, Zener diode 5. Parasitic of pn junction (body resistances, junction and diffusion capacitances), other

diode types, rectifiers and regulation using Zener diodes 6. Basics of BJT and its operating regions 7. Early effect, BJT models and characteristics 8. DC biasing of BJT circuits 9. Basics of MOSFET and its operation regions

10. MOSFET characteristics and important second order effects (channel length modulation, body effect)

11. DC biasing of MOSFET circuits 12. DC biasing of MOSFET circuits 13. Switching applications of BJTs and MOSFETs

14. Basic applications of BJTs and MOFETs in digital circuits

15. Final Examination Period 16. Final Examination Period

Required/Recommended Readings

Microelectronic Circuits, Sedra, A. S., Smith, K.C., Oxford University Press 4th Edition, 1998.

Teaching Methods Lectures/contact hours using “flipped classroom” as an active learning technique Homework and Projects There will be 5 homework assignments Laboratory Work Students will carry out experiments on semi-conductor electronic devices. Computer Use At least one of the homework assignments is based on SPICE Simulations on computer or

some questions in the homework is based on SPICE solutions Other Activities - Assessment Methods Types of assessment Number Ratio (%)

Midterm Exam 1 20 Labs 7 25 Homework 5 15 Final 1 40 Total 100

Course Administration Instructor’s office and phone number: 5th Floor office hours: TBA ; email address: [email protected] Policies: • Missing a midterm: Provided that proper documents of excuse are presented, a make-

up exam will be given for the missed midterm. • Missing a final: Faculty regulations. • Homeworks are due 1-2 weeks after it is announced. Late homeworks will be

downgraded by 20% for each day passed the due date. • Exams are in closed-notes and closed-books format. • To be eligible of taking the final, you should attend 4 out of 5 lab sections and your

midterm score should be at least 25 (out of 100). • A reminder of proper classroom behavior, code of student conduct: YÖK

Regulations • Statement on plagiarism: YÖK Regulations http://3fcampus.mef.edu.tr/uploads/cms/webadmin.mef.edu.tr/4833_2.pdf

ECTS Student Workload Estimation

Activity No/Weeks Calculation Explanation

No/Weeks per Semester (A)

Preparing for the Activity (B)

Spent in the Activity Itself (C)

Completing the Activity

Requirements (D)

Lecture 14 2 3 70 A*(B+C+D)

Homeworks 5 2 2 20 A*(B+C+D)

Labs 7 1 3 3 49 A*(B+C+D)

Midterm(s) 1 15 2 17 A*(B+C+D)

Final 1 15 2 17 A*(B+C+D)

Total Workload 173

Total Workload/25 6.92

ECTS 7

Hours