ee 466/586 vlsi design
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EE 466/586 VLSI Design. Partha Pande School of EECS Washington State University [email protected]. Lecture 7 Static MOS Gate Circuits. CMOS Gate Sizing. NAND and NOR gate sizing Follow board notes. Pseudo-NMOS Gate Sizing. Fanin and Fanout Considerations. - PowerPoint PPT PresentationTRANSCRIPT
EE 466/586EE 466/586VLSI DesignVLSI DesignPartha Pande
School of EECSWashington State University
Lecture 7Static MOS Gate CircuitsStatic MOS Gate Circuits
CMOS Gate Sizing NAND and NOR gate sizing Follow board notes
B
A
A B
F
VDDVDD
A B
A
B
F
VDD
A
A
F
1
2 2 2
2
21 1
4
4
Inverter 2-input NAND 2-input NOR
Pseudo-NMOS Gate Sizing
Fanin and Fanout Considerations Gates with a large number of inputs
(high fan-in gates) Too high resistance Area penalty
Follow board notes Fan Out
Output driving capability
Fan Out
VTC of NAND Gates
If input A is held high while input B switched from low to high, the gate is equivalent to an inverter with a 2W pull-up device and a 2W pull-down device. The resulting transfer characteristic would shift to the left of the standard inverter.
VTC of NOR Gates
Static Complementary CMOSVDD
F(In1,In2,…InN)
In1In2
InN
In1In2InN
PUN
PDN
PMOS only
NMOS only
PUN and PDN are dual logic networks…
…
• The function of the PUN is to provide a connection between the output and Vdd anytime the output of the logic gate is meant to be 1
• Similarly the role of the PDN is to connect the output to GND when the output is meant to be 0
NMOS as PDN & PMOS as PUN NMOS device can pull the output all the way
down to GND, but the PMOS device can pull it down to Vtp
NMOS transmits a strong 0 PMOS transmits a strong 1
Complex CMOS Gate
OUT = D + A • (B + C)
DA
B C
D
AB
C
Constructing a Complex Gate
C
(a) pull-down network
SN1 SN4
SN2
SN3D
FF
A
DB
C
D
F
A
B
C
(b) Deriving the pull-up networkhierarchically by identifyingsub-nets
D
A
A
B
C
VDD VDD
B
(c) complete gate
Sequential Logic
2 storage mechanisms• positive feedback• charge-based
COMBINATIONALLOGIC
Registers
Outputs
Next state
CLK
Q D
Current State
Inputs
A latch is level sensitive
A register is edge-triggered
Latch versus Register Latch
Stores data depending on the level of the clock
D
Clk
Q D
Clk
Q
Registerstores data when clock rises
Clk Clk
D D
Q Q
Latches
In
clk
In
Out
Positive Latch
CLK
DG
Q
Out
Outstable
Outfollows In
In
clk
In
Out
Negative Latch
CLK
DG
Q
Out
Outstable
Outfollows In
Latch-Based Design
• N latch is transparentwhen = 0
• P latch is transparent when = 1
NLatch Logic
Logic
PLatch
Timing Definitions
tCLK
tD
tc 2 q
tholdtsu
tQ DATA
STABLE
DATASTABLE
Register
CLK
D Q
Timing Definitions Tsu (Setup time)
Incoming data must be stable before the clock arrives Thold (Hold time)
The length of time the data remains stable after the clock arrives for proper operation
If the data is stable before the setup time and continues to be stable after the hold time, the register will properly capture the data
Tclk-Q (clk to Q delay) This is the delay from the time the clock arrives to the point
at which the Q output stabilizes
Maximum Clock Frequency
FF’s
LOGIC
tp,comb
tclk-Q + tp,comb + tsetup = T
Positive Feedback: Bi-StabilityVi1 Vo2
Vo2 =Vi1
Vo1 =Vi2
Vo1
Vi25Vo1
Vi25Vo1
Vi1
A
C
B
Vo2
Vi1=Vo2
Vo1 Vi2
Vi2=Vo1 A, B – Two stable operating points
Meta-Stability
Gain should be larger than 1 in the transition region
A
C
d
B
V i25
V o1
Vi1 5Vo2
A
C
d
B
V i25
V o1
Vi1 5Vo2
Cross-Coupled Pairs
Forbidden State
S
S
R
Q
QRS Q
Q00 Q
101 0
010 1011 0R Q
NOR-based set-reset
Cross-Coupled NAND
S
QR
Q
M1
M2
M3
M4Q
M5S
M6CLK
M7 R
M8 CLK
VDD
Q
Cross-coupled NANDsAdded clock
This is not used in datapaths any more,but is a basic building memory cell