electronic packaging and manufacturing electronic packaging
TRANSCRIPT
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Electronic Packaging and
Manufacturing
Level - I Packaging
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Level – I Packaging: Chip to Chip Carrier
Chip carrier
Housing for the thin and fragile chip
Purpose
Protects the chip from environment and abusive handling
Facilitates interconnections from the chip to the pads/holes on the
circuit board
Provides pins/pads for that serve as bases for solder joints
Also involved in the heat transfer process as the first step in the
heat flow path from source to sink
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Chip carrier
Parts of Chip Carrier
Chip
Case
Leads and lead frame
Chip to package bond
Bonding wires
Lid
Many different chip carriers exist
today but they all more or less
conform to this parent structure
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I/O count – Rent’s Rule
The need for pin-outs is
defined by Rent’s rule
a is a proportionality constant –
normally between 0.5 & 1.5
b is a constant that depends on the
functionality of the package
b
GOI aNN /
Examples:
– For low end memory chips, a=6 and b=0.12
– For high end, high-speed mainframe computer logic, a=1.4 and b=0.63
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Key design features of a chip carrier
I/O count
Modern VLSI or ULSI chips have thousands of gates thereby requiring large number of I/Os
Hermeticity
Ensures reliable operation
Entry of moisture is avoided - can cause corrosion of pins, wires
Organic materials that out-gas (release volatiles) with time are not used
Heat Dissipation
Modern circuitry result in very high heat fluxes
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Types of chip carriers
Based on materials
Plastic
Ceramic
Tape
Based on connections
Through hole
Surface Mount
Leadless
Based on I/O layout
Peripheral
Area Array
Flip chip
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Ceramic chip carriers
Ceramic cases
High Cost
Used for products with
Higher I/O count
Stringent hermeticity requirements
Bonding material – Eutectic solder of gold and silicon
Inorganic – does not release volatiles
Melting point is 390ºC
Thermal conductivity is 296 W/m-K
Aids in heat transfer from chip to case
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Ceramic Package – assembly process
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Ceramic Chip Carriers
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Plastic Encapsulated Microcircuit
(PEM)
Consists of an integrated circuit chip physically attached to a leadframe,
electrically interconnected to input-output leads, and molded in a plastic that is
in direct contact with the chip, leadframe, and interconnects.
Used for products with
Low powers
Moderate I/O count
Lenient hermeticity requirements
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PEM Assembly Flowchart
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Dual Inline Package (DIP)
First package (invented in
1960s)
Both plastic and ceramic
Low wattage chips
Fully encapsulated
Pins inserted in holes
• Attached to the underside of the
board by wave soldering
Advantages
Robust pins and connections
Automated assembly – pick and
place machines
Width of pins is increased near
the body – provides a shoulder
Disadvantages
Poor area efficiency
Limited wireability
Limited I/O count (100
mil pitch) mech14.weebly.com
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Types of leads
Pin-in-hole Gull wing type leads
J type leads mech14.weebly.com
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Other Peripheral Packages - SMT
Surface Mount Technology Lower pitch – higher I/O count
No holes required – better wiring
Both sides of the board can be used
Small Outline Package (SOP) Well-suited to 24 – 48 pin memory with space constraints
Similar to DIP with copper lead frames
Quad Flat Pack (QFP) Plastic and ceramic
Lead frames go around the entire periphery
Higher pin counts (up to 300)
There is a push for thin QFPs or TQFP for portable PCs
Ceramic QFPs are used for higher temperature or humid applications
Handling problems – only connections on one side are made simultaneously
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Peripheral packages
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Area Array Packages
Utilizes the entire bottom side of the carrier for
interconnections instead of only the perimeter.
Since area available is higher, it is possible to have
Higher I/O count
Increased lead pitch
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Pin Grid Array (PGA)
Pin Grid Array
Substitute for DIPs
Can handle large I/O count
Usually ceramic body
Pins go into vias (holes)
For high power Surface area below chip is
used for heat sink
Disadvantages Higher cost
Area efficieny is poor as pin pitch is 100 mils
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CPGA package
Source: https://i.stack.imgur.com/H88EF.jpg Source: Intel
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Utilizes small solder balls for connection between
component and motherboard
Active chip can be interconnected to the package by
wire bonding or flip chip technology
Ball Grid Array (BGA)
Bruce Guenin, Electronic Cooling, 2002
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Source: Practical Components
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Advantages of Ball Grid Array (BGA)
Advantages
Improved electrical performance due to shorter distance between
chip and the solder balls
Improved thermal performance by use of thermal vias incorporated
in the substrate
Occupies less board real estate (less package area per I/O)
Reduced handling-related lead damages due to use of solder balls
instead of metal leads.
When reflow attached to boards, the solder balls self align leading
to higher manufacturing yields.
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Disadvantages of Ball Grid Array
Disadvantages
Difficult to inspect formed solder joint after assembly
X-Ray technique used normally – but not effective in determining if a joint is ‘cold’ or ‘wet’.
Other techniques involve fibreoptic light and optical instruments
Keep-out area required in board for such techniques
Source: http://www.bga.net
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Land Grid Array (LGA)
A land grid array (LGA) is an integrated circuit design
involving a square grid of contacts that are connected to other
components of a printed circuit board. The term refers to a
"socket design" where certain components are disconnected
from the actual circuit board and integrated into the board’s structure in particularly new ways. In contrast to most other
designs, LGA configurations have pins in the socket rather
than on the chip.
Definition: Technopedia
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Land Grid Array (LGA)
Source: Wikipedia Source: Intel 771 socket
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Land Grid Array (LGA)
No solder joints/balls
Uses lands and connection pads
Pins on the socket side
Designed for lesser lead usage allowing for better
Restrictions of Hazardous Substances (RoHS)
Advantages
Ease of assembly/disassembly
Thinner and lighter packages
Short electrical path
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Lead Configurations
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Chip scale package (CSP)
A CSP is any package that has a
footprint no greater than 1.2 times
that of the IC
Importance is high due to cell
phones and PDAs
Its greatest advantage is size
reduction
The name, CSP, does not give
details about package construction
The main types of CSP are:
flex circuit interposer
rigid substrate interposer
custom lead frame
wafer-level assembly
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Types of CSPs
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Packaging Efficiency
Packaging efficiency is defined as
Examples:
DIP: 2%
QFP: 5%
BGA/CSP: 30-80%
Bare chip: 100%
Size Package
Size ICEfficiency
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Area efficiency of different packages
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What next?
The best package is no package at all!
Can the manufacturer (semiconductor fab) ship chips with BGAs or flex connectors on a tested and burned-in wafer?
This is called a wafer-level flip chip
The trends for Japanese consumer products show that packages are area arrays, thin and light. Most become wafer-level accessible.
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Flip Chip
A chip packaging technique in which the active area of the chip is "flipped over" facing downward. Instead of facing up and bonded to the package leads with wires from the outside edges of the chip, any surface area of the flip chip can be used for interconnection, which is typically done through metal bumps of solder, copper or nickel/gold. These "bumps" or "balls" are soldered onto the package substrate or the circuit board itself and underfilled with epoxy. The flip chip allows for a large number of interconnects with shorter distances than wire, which greatly reduces inductance.
Source: https://www.pcmag.com/encyclopedia/term/43310/flip-chip
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Flip Chip
Source: https://www.pcmag.com/encyclopedia/term/43310/flip-chip
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Flip Chip - introduction
Bare semiconductor chips are turned upside down and
bonded directly into the motherboard or chip carrier
Connections are made through solder bumps and (solder wettable) pads
High I/O count
All connections can be made simultaneously
Top surface (back side of the chip is available for heat dissipation.
First introduced by IBM in 1962.
Path breaking technology invention
Introduced for ceramic substrates (Solid Logic Technology)
Converted in 1970 to C4 (Controlled Collapse Chip Connection) for ICs
Initially used for peripheral packages but quickly progressed to area
arrays
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Flip Chip - process
Source: Wikipaedia
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Why use Flip Chip?
Small size
Reduced board area, less height, lesser weight
Improved performance – high speed
Eliminating bond wires reduces the delaying inductance and capacitance
Shortens the path by a factor of 25 to 100
Great I/O flexibility
Rugged
With “underfill”, flip chips behave like small blocks of cured epoxy
Availability of materials, equipment and services
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1st level connections
Automated wire bonding
Thermo compression
Ultra sonic
Thermo sonic
Tape automated bonding
Flip chip bonding
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Wire bonding
Wirebonding is an electrical interconnection technique using thin wire and
a combination of heat, pressure and/or ultrasonic energy. Wirebonding is a
solid phase welding process, where the two metallic materials (wire and
pad surface) are brought into intimate contact. Once the surfaces are in
intimate contact, electron sharing or interdiffusion of atoms takes place,
resulting in the formation of wirebond.
Process Pressure Temperature
(C)
Ultrasonic Energy Wire Pad
Thermo-
compression
High 300-500 No Au Al, Au
Ultrasonic Low 25 Yes Au, Al Al, Au
Thermosonic Low 100-150 No Au Al, Au
Two basic wirebonding methods
Ball bonding
Wedge Bonding mech14.weebly.com
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Ball Bonding
Components
Wire
Capillary
Electronic Flame Off (EFO) system
Uses T/C or T/S bonding
Temperature range is 100-500°C
Fine gold wire (75m) normally used
used where the pad pitch is greater than 100m mech14.weebly.com
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Ball Bonding (cont.)
Capillary
Finished bonds mech14.weebly.com
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Wedge Bond
Name is based on shape of the tool
Wire fed at 30-60o from the horizontal bonding surface through a hole in the back of a bonding wedge
Process used is normally U/S or T/S
Al wire – U/S bonding process
Au wire – T/S bonding process
Can be used for smaller pitches Speed is low
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Wedge Bond
Process Wire pinned against die pad
U/S or T/S bond is formed
Wedge ascends and forms the loop
Descends on the substrate and forms the second bond
Wire torn after second bond using clamp tear (wedge stationary) or table tear (clamp stationary)
Source: http://www.westbond.com/wedge_bond_guide.htm
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Video links
https://www.youtube.com/watch?v=xAw7CzuyrV0
https://www.youtube.com/watch?v=mQP9J4iYYtA
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Tape Automated Bonding (TAB)
Process of mounting a die on a flexible tape made of polymer
material, such as polyimide
Mounting is done such that the bonding sites of the die,
usually in the form of bumps or balls made of gold or solder,
are connected to fine conductors on the tape, which provide
the means of connecting the die to the package or directly to
external circuits.
Sometimes the tape on which the die is bonded already
contains the actual application circuit of the die.
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Tape Automated Bonding (TAB)
https://www.youtube.com/watch?v=X104jJNTvuc
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Flip chip bonding
Bumping the die
Attachment to
substrate
Epoxy Underfill
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Flip chip bonding - steps
Formation of solder bumps on the front face of the die/chip Under bump metallization (UBM)
Solder deposited over the UBM by evaporation, electroplating, screen printing solder paste, or needle-depositing
Bumped die placed on substrate pads Wetted controlled collapse interconnection
Solid state bond – uses T/C or T/S bonding techniques
Solder flux helps in removal of oxide and ensures perfect wetting
Under-chip space filled with a non-conductive "underfill" adhesive joining the entire surface of the chip to the substrate
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Bumping the die
Formation of solder bumps on the front face of the die/chip Under bump metallization (UBM)
Solder deposited over the UBM by evaporation, electroplating, screen printing solder paste, or needle-depositing
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Under Bump Metallization
Under Bump Metallization (UBM) is an essential step
where the connection pads are coated/sputtered with a
metallic layer
IC connection pads typically Al (oxidation, non wettable, non – solderable)
UBM layer produces a good bond to the aluminum pad, hermetically seals
the aluminum, and prevents the potential of diffusion of metals into the IC
package
Methods
dry vacuum sputter method combined with electroplating - multi-metal
layers sputtered in a high temperature evaporation system
Electroless Nickel/Immersion Gold (ENIG) - consists of wet chemical
processes
http://www.uyemura.com/under-bump-metallization-to-reduce-wafer-processing-costs.htm
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Bumping process
Source: Dorogi et al. (2006) “Advances in Metal Deposition for Wafer Bumping”, Solid State Technology
Source: http://www.practicalcomponents.com
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Solder Bumps
http://www.faradaysolutionsllc.com/images/solder-bumps.gif
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Attachment to the Substrate
Bumped die placed on substrate pads Solder is “reflowed” – typically using hot air reflow
soldering process
Solder flux helps in removal of oxide and ensures perfect wetting
Image: Wikipaedia
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Flip Chip - process
Source: Wikipaedia
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Underfill
Underfill needle-dispensed along the edges of each chip
drawn into the under-chip space by capillary action
heat-cured to form a permanent bond
Why is underfill required? compensate for any thermal expansion difference between the chip
and the substrate - mechanically "locks together" chip and substrate so that differences in thermal expansion do not break or damage the electrical connection of the bumps.
protects the bumps from moisture or other environmental hazards
provides additional mechanical strength to the assembly
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Underfill steps
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Underfill Process
Capillary Flow Injection Flow
Compression Flow
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Summary
Flip Chip Technology – one of the most significant
advances in Electronic Packaging
3 steps
UBM
Attachment to substrate
Underfill
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Advanced Packaging
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Advanced Packaging
Incessant need for faster,
lighter cheaper and better
electronics
Shrinkage in footprint and
form factor
Need for advanced designs,
methods
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Multi-chip Module (MCM)
Multiple chips on the same substrate/package
Source: Intel Corporation
Source:
https://arstechnica.com/gaming/2012/10/nintendo-
does-its-own-wii-u-teardown-shows-off-multichip-
module-design/
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System on a Chip (SoC)
Multiple functions are
implemented on a single die
Highest performance at lowest power
extremely complex
Possibilities
one or more processor cores, memory
blocks, peripheral functions, and
hardware accelerators, all created on
the same piece of silicon
digital logic, memory, and analog/RF
functions all on the same die
Source: https://www.eetimes.com/document.asp?doc_id=1279540
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System in Package (SiP)
Chip-scale package (CSP) devices mounted on a common
substrate used to connect them all together.
Substrate and its components then placed in a single package
Possibilities
can include analog, digital, and radio frequency (RF) dice in the same
package, where each die is implemented using that domain's most appropriate
technology process
Source: https://www.eetimes.com/document.asp?doc_id=1279540
Source: Octavo Systems Source: STATS ChipPAC
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2.5D integration
Silicon interposer placed between the SiP substrate and the die, where this
silicon interposer has through-silicon vias (TSVs) connecting the
metallization layers on its upper and lower surfaces. Substrate and its
components then placed in a single package
Advantages
Overcomes the problem of mismatch in wiring tracks in die and SIP substrate
Increase in capacity and performance
Source: https://www.eetimes.com/document.asp?doc_id=1279540
Xilinx Virtex-7 2000T
Source: http://www.techdesignforums.com
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3D integration
Mount two or more dies on top of each other
Source: GIAN course by Prof. A Dasgupta, 2018
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Package on Package (PoP)
Source: GIAN course by Prof. A Dasgupta, 2018
Allow one peripheral package on top of another
Tessera Folded Package
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Summary – Advanced Packaging
Multi Chip Module (MCM)
System on a Chip (Soc)
System in Package (SiP)
2.5D and 3D integration
Package on Package (PoP)
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Summary – 1st level packaging
Interconnect technology
Types of packages
Wire bonding
Tape Automated Bonding
Flip Chip Bonding
Advanced Packaging
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References:
“Packaging of Electronic Systems”, James W. Dally, McGraw-Hill Education,
1990
“Fundamentals of Microsystems Packaging: R. R. Tummala, McGraw Hill, 2001
Essentials of Electronbic Packaging – A Multidisciplinary Approach”, P
Vishwanadham, ASME Press, 2011
Chanchani R., Integration Technologies – An Overview. In: Lu D., Wong C. (eds)
Materials for Advanced Packaging. Springer, Boston, MA, 2009
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