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Enhancing Life One Photon at a Time

_________Applications_________

High Energy Physics Nuclear Medicine Medical Imaging

Life Science Biotech Instrumentation

Homeland Security Flow Cytometry

Biological Sensors Analytical Instruments

Confocal & SEM microscopy

___________Features__________

Sensitive to visible light Detection of extremely faint light

Low operating voltage Very high gain (106)

Extremely good timing performance Insensitive to magnetic fields Not damaged by ambient light

Small and compact Available in package or die form

Room temperature operation

Low light level silicon radiation detector with single photon sensitivity

and photo counting capability

Valid and innovative solid state alternative to conventional photomultiplier tubes (PMT detectors)

Direct NUV/VIS light detection g, X, b detection with crystals

SiPM – The Silicon PhotoMultiplier

3 July 2014

2

NDIP 2014 - Tours, France

SiPM Markets and Applications

3 July 2014 NDIP 2014 - Tours, France

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AdvanSiD SiPM technology roadmap


4th generation 2015 +

3rd generation 2014

2nd generation 2012

1st generation 2010

Original n-on-p SiPM technology

RGB & NUV SiPM technology

•RGB-SiPMs Red-green-blue light detection

•NUV-SiPMs Near-Ultra-Violet Light detection

•Low noise •High VBD uniformity

•High temperature stability

New 40um micro-cell RGB & NUV SiPMs

•RGB DCR<400 kHz/mm2

•NUV DCR<200 kHz/mm2

•60% fill-factor •High PDE •High dynamic range

New RGB-HD & NUV-HD SiPMs

•100 kHz/mm2 DCR •10 to 30 um cells •60% PDE •Reduced crosstalk

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AdvanSiD SiPM technology


NUV-SiPM p-on-n structure Near-ultra-Violet light detection Peak PDE at 420 nm DCR < 200 kHz/mm2

RGB-SiPM n-on-p structure Red-Green-Blue light detection Peak PDE at 550 nm DCR < 400 kHz/mm2

Unified cell-size: 40 um, 60 % fill-factor Best trade-off in terms of PDE, Gain, Noise

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Active Area size CSP TO18 TO8 Glob-Top

1x1 mm2 R R R

1.2 mm circular R R R

3x3 mm2 R R

4x4 mm2 R R

Single-channel SiPMs


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1x1 mm2 square

active area

1.2 mm circular

active area

New CSP SiPM Packages


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• New SLIM 3x3 and 4x4 mm2 CSP SiPMs

– “Edgeless” 3x3 and 4x4 mm2 SiPM dies

– SLIM CSP package with reduced borders

4x4 mm2 ACTIVE AREA

4.48 mm 3.48 mm

3.93 mm

4.93 mm

200 um border

3x3 mm2 ACTIVE AREA

SiPM Arrays


Channels / Pixel size Monolithic Hybrid

Hybrid High Fill-Factor

64 channels / 1.5 mm pixels R

16 channels / 3 mm pixels R R

16 channels / 4 mm pixels R R

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64 channels – 1.5 mm SiPM pitch 50 um gap between pixels

16 channels – 4x4 mm2 SiPMs Independent anodes & cathodes

16 channels – 87.5 % Fill-Factor 4x4 mm2 SiPMs, 4.2 mm pitch

16 channels – 87.5 % Fill-Factor 4x4 mm2 SiPMs, 4.2 mm pitch

Hybrid High Fill-Factor Array


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• Hybrid array = silicon dies (not CSP) on common package

• 16 elements, 4x4 mm2 SiPMs, 4.2 mm pitch: 87.5 % Fill-Factor

• 16 elements, 3x3 mm2 SiPMs, 3.2 mm pitch: 85 % Fill-Factor – 200 um gap between active areas, 120 um gap between silicon dies

– Regular pitch (x & y direction), 3 sides buttable

– Die-to-die (bridge) bonding: common front bias, independent backside readout

200um

200um

SiPM die

SiPM die

SiPM die

SiPM die

Hybrid Array customization


• SiPM die customization

– SiPM size from 2x2 mm2 to 1x1 cm2

– Die shape square, rectangular

– Active area shape square, circular

• Package customization

– Number of SiPMs # of rows, # of columns

– SiPM pitch

– Connection scheme single die bonding, die-to-die (bridge) bonding, output connectors

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SiPMs uniformity

• RGB and NUV SiPMs with 40um micro-cell

• Production on 6-inch wafers

• Data from on-wafer measurements at 24 °C


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1. Breakdown voltage (VBD) (24 °C)


12

0

100

200

300

400

500

600

700

800

24,5 24,6 24,7 24,8 24,9 25 25,1

Co

un

t

Breakdown voltage (V)

NUV-SiPMs

0

100

200

300

400

500

600

700

28,4 28,5 28,6 28,7 28,8 28,9 29 29,1 29,2 29,3 29,4 C

ou

nt

Breakdown voltage (V)

RGB-SiPMs

0.2 V breakdown uniformity: 92% SiPMs



0.1 V breakdown uniformity: 85% SiPMs VBD uniformity Gain Uniformity Upon request: Selection of SiPMs based on VBD

Sample wafer #1 Sample wafer #2

Sample wafer #1 Sample wafer #2 Sample wafer #3

2. Dark Current (40um micro-cell, 24 °C)


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High dark current uniformity: 96.7% SiPMs within a factor of 2 (1.8e-10 – 9.9e-10 A/microcell)

DCR < 200 kHz/mm2 (at 20° C and 3V overvoltage)

0

20

40

60

80

100

1201

,2E-

10

1,5

E-1

0

1,8

E-1

0

2,1

E-1

0

2,4

E-1

0

2,7

E-1

0

3E-

10

3,3

E-1

0

3,6

E-1

0

3,9

E-1

0

4,2

E-1

0

4,5

E-1

0

4,8

E-1

0

Co

un

t

Dark Current per micro-cell (A)

NUV-SiPMs @3 V ov.

0

50

100

150

200

250

300

Co

un

t Dark Current per micro-cell (A)

RGB-SiPMs @4 V ov.


High dark current uniformity: 100% SiPMs within a factor of 2 (4e-10 -- 8e-10 A/microcell)

DCR < 400 kHz/mm2 (at 20° C and 4V overvoltage)

Sample wafer #1 Sample wafer #2

3. Quenching resistance (Rq) (24 °C)


14

0

20

40

60

80

100

120

Co

un

t

Quenching resitance (ohm)

NUV-SiPMs Sample wafer #1 Sample wafer #2

0

50

100

150

200

250

300

350

400

450

Co

un

t Quenching resitance (ohm)

RGB-SiPMs


High Rq uniformity on wafers 97% SiPM within ±10% from mean value

Rq uniformity SiPM signal amplitude uniformity

AdvanSiD Evaluation Boards


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Product code SiPM Evaluation Board

ASD-EP-EB-N ASD-EP-EB-PZ

Description SiPM signal amplifier SiPM signal amplifier

Pole-Zero compensation network

SiPM Application Dark characterization

Faint light measurements

Timing and Energy measurements with

scintillators, LEDs, Laser, optic fibers

Low Gain Output OUT 1 OUT 1

High Gain Output OUT 2 -

Pole-Zero Output - OUT2

Output Impedance 50 W 50 W

Output Polarity OUT 1: Negative

OUT 2: Negative

OUT 1: Positive

OUT 2: Negative

Output Voltage

Swing ±3.9 V (typ.) ±3.9 V (typ.)

Power Supply

Operating Range

4.5 V (Min)

12 V (Max)

4.5 V (Min)

12 V (Max)

Schematic

Pole-Zero compensation

• The compensation of the SiPM signal tail leads to an effective suppression of the baseline fluctuations due to dark counts. This is particularly important for time pick-off of signals from SiPMs coupled to scintillators (e.g., timing measurements for PET applications). In fact, standard Leading-Edge Discriminator (LED) technique is rather sensitive to the local variation of the baseline.


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A dark pulse occurring right before a gamma pulse rises the baseline and introduces a non-negligible time jitter due to the finite slope of the SiPM signal itself; By eliminating the tail of the SiPM pulses (hence the tail of the dark events) the baseline readily restores to zero, avoiding fluctuations, and allowing lower threshold levels for LED time pick-off.

PZ Evaluation Board: TOF-PET setup


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Setup picture

SiPM + LYSO wrapped in teflon

ASD-EP-EB-PZ SiPMs pre-amplifier with Pole-Zero compensation

22Na source

Energy and Timing measurements with PZ Evaluation Board

Out1: Preserve signal shape (energy channel)

Out2 (PZ compensated): Only rising edge (timing channel)

Latest news from AdvanSiD


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• TRIMAGE EU project – Optimised TRI-modality (PET/MR/EEG)

imaging tool for schizophrenia based on SiPMs (see also poster 75 – Weeroc)

• MEG upgrade (PSI institute)

– Timing Counter based on AdvanSiD NUV-SiPMS

Company assets

• Internal SiPM production for customized SiPMs – 6 inch Silicon production

• Volume production at external foundry – Standard, high volume production

– 8 inch fabrication line, short lead-time

• Internal packaging and assembly line

• Internal testing, characterization, yield & reliability procedures

• Worldwide presence in key areas – Europe, USA, Canada, Brazil, Israel, Asia


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SiPMs R&D at FBK High-Density SiPMs development Small cell size, «Low» gain (105 < gain < 106)

low after-pulse

low direct and delayed XT

low external XT

2nd generation trench technology

High dynamic range (5’000 – 10’000 cells/mm2)

Fast signals (low capacitance)


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RGB-HD - 15 um micro-cell Measured by Y. Musienko @CERN

Thank You


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