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ESPROS Photonics Corporation Key Technology of the 21 st Century High Speed, Backside Illuminated 1024x1 Line Imager with Charge Domain Frame Store in Espros Photonic CMOS TM Technology IISW2013 Snowbird, UT June 15 th , 2013 Martin Popp , Beat De Coi, Dieter Huber, Pascal Ferrat, Markus Ledergerber Espros Photonics AG, Sankt Galler Strasse 135, CH-7320 Sargans, Switzerland

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ESPROS Photonics CorporationKey Technology of the 21st Century

High Speed, Backside Illuminated 1024x1 Line Imager with Charge Domain Frame Store in Espros Photonic CMOSTM Technology

IISW2013 Snowbird, UTJune 15th, 2013

Martin Popp, Beat De Coi, Dieter Huber, Pascal Ferrat, Markus Ledergerber

Espros Photonics AG, Sankt Galler Strasse 135, CH-7320 Sargans, Switzerland

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© by ESPROS Photonics Corporation 2

Our Goal

Provide high performance yet cost efficient solutions for special imaging applications

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Our approach

Base material

Adapted CMOS process

Wafer thinning,BS processing

Packaging

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The application

Key requirements:1024 pixels: 7.5µm x 120µm Single analog video out up to 50klines/sHigh-speed frame store: burst rate 500klines/s

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The product

130

0µm

7960µm

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The product

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The Pixel: Fill factor

Position of light source

Scan point light source across pixel field:No dips in summed intensity observed==> 100% fill factor

Output pixel i

Output pixel i+1

Sum of outputs: Not dips

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The Pixel: QE & resolution

450 550 650 750 850 950 10500

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

measured QE

wavelength [nm]

abso

lute

qu

antu

m e

ffici

ency

Geometrical aspect ratio of pixel in Si:7.5µm (pitch) / 50µm (height) = 1:7

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Resolution vs. wavelength

300 400 500 600 700 800 9002

2.5

3

3.5

4

4.5

5

5.5

6

0.01

0.1

1

10

100

s_pix [µm]

Linear (s_pix [µm])

Absorption length in Si [µm]

Wavelength [nm]

sigma_pix [nm]

Abs

orp

tion

len

gth

m]

Spatial resolution is constant over wide wavelength range→ high-res NIR imaging becomes possible

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Frame store: Resolution

No impact on resolution by charge collection close to frame store

Sub-pixel are a

90µ

mF

rame store

(shielded) 60 µ

m

Effective optical sensitive height: 12

0µm

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Frame store: Parasitic light sensitivity

No impact by illumination in FS area up to 7x max. signal amplitudeLimiting factor: charge spill-over

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Summary

CMOS-CCD technology with backside illumination

High-QE over broad wavelength range

Application example: Line imager

Charge domain frame store

Constant PSF from blue to NIR

Other applications can be adressed

Thank you!

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© by ESPROS Photonics Corporation 13

more Info … ESPROS Photonics AGMarket ing & Sales St . Gallerst rasse 135

CH-7320-Sargans Main +41 58 411 03 00 Fax +41 58 411 03 01 [email protected] www.espros.ch

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File: This document is confidential and protected by law and international trades. It must not be shown to any third party nor be copied in any form without our written permission.

07.09.2011

Page 1<xx>

Raster 0.1mm

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