evbum2566db - implementing all‐in‐one pc power supply

© Semiconductor Components Industries, LLC, 2018

August, 2018 − Rev. 11 Publication Order Number:

EVBUM2566/D

EVBUM2566/D

Implementing All‐in‐One PCPower Supply EvaluationBoard User's Manual

PC Power Supply with the NCP13992,NCP1616, NCP4306 and NCP431

DescriptionThis evaluation board user’s manual provides basic information

about a high efficiency, low no-load power consumption referencedesign that was tailored to power All-in-One PC or similar type ofequipment that accepts 12 VDC on the input. The power supplyimplements PFC front stage to assure unity power factor and lowTHD, current mode LLC power stage to enhance transient responseand secondary side synchronous rectification to maximize efficiency.This design note focuses mainly on the NCP13992 current mode LLCcontroller description. Please use links in literature section to getmaterials about NCP1616, NCP4306 and NCP431 to gain moreinformation about these devices.

The NCP13992 is a high performance current mode controller forhalf bridge resonant converters. This controller implements 600 Vgate drivers, simplifying layout and reducing external componentcount. The Controller also features built-in high voltage startup. TheBrown-Out input function eases implementation of the controller in allapplications. In applications where a PFC front stage is needed, theNCP13992 features a dedicated output to drive the PFC controller.This feature together with quiet skip mode technique further improveslight load efficiency of the whole application. The NCP13992provides a suite of protection features allowing safe operation in anyapplication. This includes: overload protection, over-currentprotection to prevent hard switching cycles, brown-out detection, openoptocoupler detection, automatic dead-time adjust, over-voltage(OVP) and over-temperature (OTP) protections. The LLC currentmode means that the operating frequency of an LLC converter is notcontrolled via voltage (or current) controlled oscillator but is directlyderived from the resonant capacitor voltage signal and actual feedbacklevel. This control technique brings several benefits compare totraditional voltage mode controllers like improved line and loadtransient response and inherent out of zero voltage switchingprotection.

Table 1. GENERIC PARAMETERS

Device Applications Input VoltageNominal OutputVoltage/Current Output Power VOUT Ripple

NCP1616,NCP13992, NCP4306

AOI, Server Power

90 – 265 Vac 12 Vdc / 20 A 240 W < 150 mV@ Full load

Efficiency@ 230 V AC Standby Power

OperatingTemperature Cooling Topology Board Size

4 point AVG 94.11% < 135 mW 0 – 40°C Convection OpenFrame, Forced in

Frame

PFC CrCMLLC + SR

194 × 108 × 27 mm7.11 W/inch3

www.onsemi.com

Figure 1. Evaluation Board Picture

EVAL BOARD USER’S MANUAL

Key Features• Wide Input Voltage Range

• High Efficiency

• Low No−load Power Consumption

• No Auxiliary SMPS, Fast Startup

• X2 Capacitor Discharge Function

• Near Unity Power Factor

• Low Mains & Overload Protection

• Thermal Protection

• Regulated Output Under any Conditions

• Excellent Load & Line Transient Response

• All Magnetics Available as Standard Parts

• Small Form Factor

• Universal Design for Multiple ControllersAssembling Possibilities

• Extremely Low No−load Consumption

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EVBUM2566/D

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Figure 2. AOI Demo-board Schematic − Primary Side (Assembled Options on Standard Revision of the Demo)

VDR H10S 275TS E

T−4A

2n2/Y12n2/Y1

1uF /275Vac

0.05R / 2W

22k

GN

D

1uF /275Vac

1uF /275Vac

820n100n

22k

22k

33nF /2kVdc

5k6

GN

D 100n

GN

D 2n2/Y1

4M7

V bulk

F C

PF

22N60

F C

PF

13N60

F C

PF

13N60

100

0R

22R

22R

100n

MS

R 860

5R 6

27k

FO

D817B

220p/1kV

10n

13k

0R

10n

GND

MU

R A

160

1N5408

strap

MB

R 2H

100S F

T3G

BC

807−16

47

1N4148

KBU810

33nF /2kVdc

NU NU

3n9

GN

D

+17V

22R

30k

2u2

GN

D

GN

DG

ND

0R

470p

GN

D

0R

15V

22k

10n

GN

D

220u/35V

1M81M81M61M6

0R20k

200k

100n

MB

R 0540

MB

R 0540

1R

1R

NC

P13992A

IOG

E V

B

GN

D

FO

D817B

100u/25

GN

D5k1

100p

GN

D 330k

20k

GN

D

BS

S 138

4k7

100u/450V

100u/450V

100u/450V

0R

1k5

GN

D

4V3

2R

BA

T54T

1

220p/1kV2k

90uH, 7447013

90uH, 7447013

GN

D

2k72k7

1n

GN

D

VC

C IN

T

VC C INT

GN

D

S K

129_GN

DL

75k

220n

MR A4007T 3G

MR A4007T 3G

BAT54T1

VC C INT

+17V220uF

/35V

GN

D

2k72k7

1N4148

1N4148 33k

1M

1n

0R

150k

0R

1N41480R

0R

0R

0R

0R

47k

10n

0R

1n

GN

D

86k

86k

0R

10n

GN

D

680k

330k

1N4148

1k

BS

S 138

GN

D

50uH, 750370249

NC

P1616A

1

GN

DG

ND

GN

D

GN

D

LN AC INPUT90 − 265Vac

R 48

F 1

C Y1C Y2

C 15

R 38

R 33

C 33

C 47

C 40

C 41

R 20

R 36

C 18

R 104

C 54

C Y

3

R 107

Q4

Q3

Q5

R 64

R 42

R 54

R 55

C 53

D5

R 96

R 105

3 4O

K1

C 29

C 34

R 67

R 72

C 57

D23

D4

R 91

D3

Q7

R 25

D7

B1

C 7

D9 D6

C 32

R 26

R 75

C 36

R 52

C 50

R 5

D2

R 4

C 2

C 3

R 18R 27R 35R 47

R 56

R 70

R 80

C 43

D13

D12

R 58

R 62

X2−1

X2−2

HV

_IN1

VB

/PF

C −

F B

3

R E

M4

LLC _F

B5

LLC _C

S6

OV

P/O

T P

7

P_O

N/O

F F

8M

OD

E9

VC

C10

GN

D11

MLO

W12

MU

P14

HB

15V

BO

OT

16IC

3

3 4O

K3

C 37

R 126

C 44

NT

C 1

R 133

Q6

R 66

C 38

C 55

C 16

R 147

R 148

D21

R 150

D26

C 17

R 63

L5L6

R 87R 92

C 62

HE

AT

S IN

K_1

R 137

C 66

D22

D28

D19

C 56

R 6R 15

D1

D8

R 28

R 31

C 31

R 34

342

5*2

1

P E

R 1

R 16

D14R 43

R 50

R 57

R 61

R 69

R 74

C 26

R 94

C 13

R 2

R 158

R 13

C 27

R 49

R 102D17

R 24

Q8

L1

F B

1

VC

NT

R L

3

F F

C N

T R

L4

S T

DB

Y/FA

ULT

2

C S

/ZC

D5

GN

D6

DR

V7

VC

C8

HV

10U

1

+

+

+

+

+

INT

INT

INT

+


EVBUM2566/D

www.onsemi.com3

Figure 3. AOI Demo-board Schematic − Secondary Side (Assembled Options on Standard Revision of the Demo)

1000u/16V

1000u/16V

1000u/16V

220u/25V

820R

39k

47k

11k

150k

2n7

GN

D1

1000u/16V

1000u/16V

1000u/16V

1000u/16V

1000u/16V

GN

D1

GN

D1

0R

68k

56R

56R

0R0R

5k6

36k

6n8

6n8

1uF100n

100n1uF

5k6

36k

22k

22k

4R 74R 7

56R

56R

NC

P 4306A

AA

ZZ

ZA

GN

D1

GN

D1

NC

P 4306A

AA

ZZ

ZA

GN

D1 G

ND

1

GND1

GND1 GND1GND1 GND1

GND1

GN

D1

GN

D1

NTMFS 5C 442

NTMFS 5C 442NTMFS 5C 442

NTMFS 5C 442

0R

47k

12k

10n

82k

68k

1k

GN

D1

NC P 431

NC

P 431

0R

0R

WW

006

27k

27k

GND1GND1

GND1 GND1

100n100n

100n100n

GN

D1

C 21

C 22

C 23

C 12

R 85

R 89

R 95

R 98

R 99

C 51

12

C 9

C 24

C 8

C 10

C 11

X1−1

X1−2

X1−3

X1−4

R 78

R 88

R 9

R 41

R 3R 30

R 39

R 37

C 25

C 4

C 6

C 5

C 19

C 20

R 11

R 7

R 12

R 51

R 10R 32

R 8

R 40

IC 4

DR

V8

GN

D7

T R

IG/D

IS5

C S

6

VC

C1

MIN

_TO

F F

2

MIN

_TO

N3

LLD4IC

5

DR

V8

GN

D7

T R

IG/D

IS5

C S

6

VC

C1

MIN

_TO

F F

2

MIN

_TO

N3

LLD4

Q20

Q21

Q2

Q9

R 68

12

R 76

R 77

C 30

R 79

R 82

R 84

IC 6A C

R

A C

R

IC 7

R 140R 142

L4

11 9*2

8

R 100

R 101

C 59

C 63

C 71

C 73

+

+

+

+

+

+

+

+

+


EVBUM2566/D

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Figure 4. AOI Demo-board Schematic − Primary Side (Assembled and also All Other Possible Options in PCB Layout)

VDR H10S 275TS ET−4A

2n2/Y12n2/Y1

1uF/275Vac

0.05R / 2W

22k

GN

D

1uF/275Vac

1uF/275Vac

820nN

U100n

GN

D

22k

22k

33nF/2kVdc

5k6

NU

GN

D

GN

DNU

100n

NU

GN

D 2n2/Y1

4M7

V bulk

FC P F22N60

FC

P F

13N60

FC

P F

13N60

100

0R

22R22R

100n

MS

R 860

5R 6

27k

FO

D817B

NU

220p/1kV

10n

13k

0R

10n

GND

MU

R A

160

NU

1N5408

strap

NU

MB

R 2H

100S F

T3G

BC807−16

471N

4148

KB

U810

33nF/2kVdc

NU NU3n9G

ND

+17V

NU

22R

30k

2u2

GN

D

GN

DG

ND

0R

GN

D

GN

D

GN

D

470p

GN

D

0R

15V

22k

10n

GN

D

220u/35V

1M8

1M8

1M6

1M6

0R

20k

200k

100n

MB

R 0540

MB

R 0540

1R1R

NC

P1399A

IOG

E V

B

GN

D

NU

FO

D817B

100u/25

GN

D

5k1

GN

D

100p

GN

D 330k

GN

D

NU

NU

20k

GN

D

NU

BS

S 138

GN

D

4k7

NU

GN

D

100u/450V

100u/450V

100u/450V

NU

NU

0R

1k5

GN

D

4V3

1RB

AT

54T1

220p/1kV2k

90uH, 7447013

90uH, 7447013

GN

D

NU

2k72k7

1n

GN

D

NU

VC

C IN

T

VC C INT

GN

D

S K

129_GN

DL

NC

P1616A

1

GN

D

75k

220nN

U

NU

MR A4007T3G

MR A4007T3G

NU

NU

NU

NU

BA

T54T

1 VC

C IN

T

+17V

220uF/35V

GN

D

2k72k7

1N4148

1N4148

NU

33kGN

D

NU

1M

1n 0R

150k

0R

1N4148

0RN

U0R

NU

0R

NU

NU

0R

0RN

U

47k

NU

10n

0R

NU

NU

1n

GN

D

86k

86k

0R

10n

GN

D

680k

330k

NU

GN

D

1N4148

1k

BS

S 138

GN

D

50uH, 750370249

LN AC INP UT90 − 265Vac

Dual footprint

package

Dual footprint

package

Dual footprint

package

R 48

F1

C Y1C Y2

C 15

R 38

R 33

C 33

C 47

C 40

C 39

C 41

R 20

R 36

C 18

R 104

R 103

C 28

C 54

C 42

C Y

3

R 107

Q4

Q3

Q5

R 64 R

42

R 54

R 55

C 53

D5

R 96

R 105

3 4O

K1

R 71

C 29

C 34

R 67

R 72

C 57

D23

L12

D4

R 91

L13

D3

Q7

R 25

D7

B1

C 7

D9 D6C

32

R 97

R 26

R 75C

36

R 52

C 50

R 5

D2

R 4

C 2

C 3

R 18

R 27

R 35

R 47

R 56

R 70

R 80

C 43

D13

D12

R 58

R 62

X2−1

X2−2

HV

_IN1

VB

/P F

C −

FB

3

R E

M4

LLC _F

B5

LLC _C

S6

OV

P /O

TP

7

P _O

N/O

FF

8M

OD

E9

VC

C10

GN

D11

MLO

W12

MU

P14

HB

15V

BO

OT

16IC

3

3 4O

K2

3 4O

K3

C 37

R 126

C 44

NT

C 1

D11

R 132

R 133

C 46

Q6

R 66

C 35

C 38

C 55

C 16

R 144

R 146

R 147

R 148

D21

R 150

D26

C 17

R 63

L5L6

R 83

R 87

R 92

C 62

R 93

HE

AT

S IN

K_1

HV

FB

1*2

FB

2*2

R S

T3

FO

VP

/BU

V4*2

VC

NT

R L

5*2

FF

C N

TR

L6

FAU

LT7

S T

DB

Y8

P S

TM

R9

P F

C O

K10

C S

/ZC

D11

GN

D12*2

DR

V13*2

VC

C14

HV

16*2U

1

R 137C

66C

67

NT

C 2

D22

D28

R 17 C

68

D18

R 14

D19

C 56

R 6

R 15

D1

D8

R 23

R 28

R 29

R 31

C 31

R 34

342

5*2

1

PE

R 1

R 16

D14

R 43

R 46

R 50

R 53

R 57 R

59R

60

R 61

R 69

R 73

R 74

R 81

C 26

R 94

D15

D16

C 13

R 2

R 158

R 13

C 27

R 49

R 102

C 74

D17

R 24

Q8

L1

+

+

+

+

+

+

INT

INT

INT

+

2.5V


EVBUM2566/D

www.onsemi.com5

Figure 5. AOI Demo-board Schematic − Secondary Side (Assembled and also All Other Possible Options in PCB Layout)

1000u/16V

1000u/16V

1000u/16V

220u/25V

820R39k

47k

11k150k

2n7

NU

GN

D1

GN

D1

1000u/16V

1000u/16V

1000u/16V

1000u/16V

1000u/16V

GN

D1

GN

D1

NU NU

NU

NU

GND1

0R

68k

56R

56R

0R

0R

5k6

36k

6n8

6n8

1uF100n

100n

1uF

5k6

36k

22k

22k

4R 7

4R 7

56R

56R

NC

P4306A

AA

ZZ

ZA

GN

D1

GN

D1

NC

P4306A

AA

ZZ

ZA

GN

D1

GN

D1

GN

D1

GND1 GND1

GND1 GND1

GN

D1

GN

D1

GN

D1

NTMFS 5C 442

NTMFS 5C 442

NTMFS 5C 442

NTMFS 5C 442

0R

GND1

NU NU

NU

NU

NU

NU

NU

NU

NUNUNU

NU

NU

NU

NU

NU

NU

NU

NU

NU

NU

NU

NU

NU

NU

NU

NU

NU(MMS D4148)

NU

NU

NU

NU

NU

47k

12k

10n

82k

68k

1k

GN

D1

NU

GN

D1

GN

D1

GND1GND1

GN

D1

GN

D1

NC P431

NC

P431

0R

NU

0R

NU

NU

NU

NU

WW

006

NU

NU

NU

27k

27k

NU

GND1

GND1

NU

GN

D1

GN

D1

100n100n

NUNU

NU

100n

NU

100n

C 21

C 22

C 23

C 12

R 85

R 89

R 95

R 98

R 99

C 51

C 49

12

C 9

C 24

C 8

C 10

C 11

X1−1

X1−2

X1−3

X1−4

C 48

R 86

D20

C 45

R 78

R 88

R 9

R 41

R 3

R 30

R 39

R 37

C 25

C 4

C 6

C 5

C 19

C 20

R 11

R 7

R 12

R 51

R 10

R 32

R 8

R 40

IC 4

DR

V8

GN

D7

TR

IG/D

IS5

C S

6

VC

C1

MIN

_TO

FF

2

MIN

_TO

N3

LLD4

IC 5

DR

V8

GN

D7

TR

IG/D

IS5

C S

6

VC

C1

MIN

_TO

FF

2

MIN

_TO

N3

LLD4

Q20

Q21

Q2

Q9

R 68

C 60 C 61

1212

C 1

R 19

C 106 R

21D

105

IS N

S4

VS

NS

1

OF

FD

E T

2

VM

IN3

VC

C8

DR

IVE

6

LE D

5

GN

D7

IC 101

R 117R 118R 127

R 119

R 120

C 108

R 22

C 111

R 128

R 116

C 109

LE D1

R 122

R 44

R 45

R 65

C 110

C 107

Q100

D112

R 125R 124

C 14 R 123

D10

R 76

R 77

C 30

R 79

R 82

R 84

R 90

FB

C6

GN

D7

IS N

S3

LE D

4

OF

FD

E T

2

ON

OF

F5

VC

C8

VS

NS

1

IC 6A C

R

A C

R

IC 7

R 140

R 141

R 142

R 143

Q10

R 121

R 131

L4

R 138

C 65

D27

11 9*2

8

R 100

R 101

C 52

C 58

C 59

C 63

C 64

C 69

C 70

C 71

C 72

C 73

+

+

+

+

+

+

+

+

+

+


EVBUM2566/D

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Detailed Descriptions of the Evaluation BoardThe input EMI filter is formed by components L15, L5,

L6, C47, C33, CY1, CY2 and R48 – refer to Figure 2. Theinrush current limiting resistor R91 is substituted by strap inthis demo revision – one can replace it by appropriate NTCinrush current limiter if needed. The U1 − NCP1616(Figure 2) with diodes D22, D28 and resistors R6, R15 isused to X2 capacitor discharge function after application isdisconnected from the mains. This circuit also provides PFCVcc Start-up feature and input voltage sensing, also is partlyshared for the LLC controller IC. The Power FactorCorrector (PFC) power stage uses standard boost PFCtopology formed by power components B1, C15, L2, D4,D5, Q4, R38, and bulk capacitors C16, C38, C55. The PFCcontroller U1 (NCP1616) senses input voltage directly viapin 10 (HV) through network above mentioned. The PFCinductor current is sensed by the shunt resistor R38. Theseries resistor R38 sets maximum PFC front stage peakcurrent. Maximum peak current level is to 10 A. The PFCfeedback divider is shared with LLC brown-out sensingnetwork in order to reduce application no-load powerconsumption. The PFC FB divider is formed by resistorsR18, R27, R35, R47, R158, R63, R56, R34, R69, R74 andR31. The FB signal is filtered by capacitor C13 and C31 toovercome possible difficulties caused by the parasiticcapacitive coupling between pin and other nodes that handlehigh dV/dt signals. The internal bulk voltage regulatorcompensation C40, C36, R75 is connected through R61 tothe U1 pin 3. The PFC MOSFET is driven via circuitry R25,D7, R26, R33 and Q7. This solution enables to define neededturn-on and turn-off process speed for Q4. The PNPtransistor Q7 is connected directly source of Q4 (not throughsensing shunt R38) to minimize discharge loop and thusallow fast turn off PFC switch and also minimizing EMIcaused by the driver loop. The PFC coil auxiliary windingvoltage after rectifying with D14 provides ZCD signal forPFC controller. The NCP1616 has shared pin 5 − CS/ZCDfor current limit and zero current detection. Duringturned-on Q4 is sensed and limited maximum input currentand after turning-off Q4 is detected zero current condition.The resistance of R66 should be bigger than 3.9 k� to avoidwrong detection of destroyed R38. Also, resistance R28should be reasonable high enough to limit no-load andlight-load consumption.

The LLC power stage primary side converter composesfrom these devices: MOSFETs Q3, Q5, external resonantinductor L1, transformer TR1 and resonant capacitors C7,C18. The IC3(NCP13992AIOGEVB) LLC controllersenses primary current indirectly – via resonant capacitorvoltage monitoring which is divided down by capacitivedivider C17, C29, C32 and C62.The capacitive divider hasto provide minimum phase shift between resonant capacitorsignal and divided signal on the LLC_CS pin. The capacitivedivider has to be loaded in the same time to assure fastLLC_CS pin signal stabilization after application startup –this is achieved by resistor R148.The series resistor R64 isused to limit maximum current that can flow into the

LLC_CS pin. The FB optocoupler OK1 is connected to theLLC_FB pin and defines converter output voltage by pullingdown this pin when lower output power is needed. CapacitorC51 forms high frequency pole in FB loop characteristicsand helps to eliminate eventual noise that could be coupledto the FB pin by parasitic coupling paths. The Brow-outsignal for LLC controller is derived from PFC feedbackdivider – described before. A voltage taken from node R13,R47 and R158, is impedance separated by voltage followerQ8, which helps to avoid influencing bulk voltageregulation. The voltage follower output feds R2 and R133divider, which is minimizing Q8 thresh-hold voltagetemperature dependency. Divider output is filtered with C34and connected to IC3 VB/PFC−FB pin. The Skip/REM pinof the NCP13992 issued for skip threshold adjustment.Resistors R103 and R104 are used for this purpose togetherwith noise filtering capacitor C57. The over-voltage andover-temperature protections are implemented viaOVP/OTP pin by using resistors R126 and R67, temperaturedependent resistor NTC1, Zener-diode D21, filteringcapacitor C44 and optocoupler OK3. The OVP comparatoris located on the secondary side to assure maximum OVPcircuitry accuracy. The pin 8 P_ON/OFF is actually used fordefining minimum feedback voltage – lower saturationlevel, which influences maximum switching frequency. Forthis purpose serve R105 and C26 decouples noise. Thestand-by mode − burst mode of the PFC stage and bulkvoltage are controlled by NCP13992 via MODE pin 9,which goes high during LLC stage switching and during idlefalls to low level. While skip mode operation occurs, theLLC controller forces the PFC controller into STAND-BYmode by the MODE pin 9 via circuitry R80, C43, R70 andR50. Positive hiccup mode is implemented such way, thatMODE pin influences FB divider and changes lower restartlevel from lower value to higher value. This is realized bynetwork with D17, R102 and 49. These changes help toachieve very low no-load consumption.

The VCC decoupling capacitor C54 and also bootstrapcapacitor for high side driver powering C53 are located asclose to the LLC controller package as possible to minimizeparasitic inductive coupling to other IC adjust componentsdue to high driver current peaks that are present in the circuitduring drivers rising and falling edges transitions. Thebootstrap capacitor is charged via HV bootstrap diode D23and series resistor R96 which limits charging current andVboot to HB power supply slope during initial C53 chargingprocess. The gate driver currents are reduced by added seriesresistors R54, R55 to optimize EMI signature of theapplication. For fastening the mosfets turn-off process areused serial R−D particles composed with R58−D13 andR62−D12. The primary controllers bias voltage limitercircuitry is used in order to restrict upper value of theprimary VCC voltage to approximately 13 V. The VCClimiter composes of these components: resistors R150,R4,R5 capacitors C2, C3, diodes D3, D26 and transistor Q6.Thesecondary side synchronous rectification uses IC4 and IC5


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SR controllers – NCP4306. Two MOSFTEs are connectedin parallel for each SR channel to achieve low total drop −Q2, Q9 and Q20, Q21. RC snubber circuits C4, R8, R9 andC25, R40, R41 are used to damp down the parasitic ringingand thus limit the maximum peak voltage on theSRMOSFETs. The SR controllers are supplied fromconverter output via resistors R68, R10 and R32. Theseresistors form RC filter with decoupling capacitors C5, C6and C19, C20. The minimum on-time – R11, R39 andminimum off-time – R7, R37 resistors define neededblanking periods that help to overcome SR controllers falsetriggering to ringing in the SR power stage. Each SRcontroller uses very clever light load detection feature(LLD). After first incoming pulse from burst, the LLDfeature wakes-up controller from low power mode (50 �A)and prepare it to operate. As last pulse from the burst endscontroller enters to stand-by mode after defined period,which is set with resistor (R100 and R101). Instead of thecomplicated light-load guard circuitry, just one additionalresistor is needed for setup. The NCP4306 LLD featureoffers great benefits compare to the traditional solutions, inwhich SR operation and no-load consumption is much lessefficient. The output filtering capacitor bank composes fromlow ESR electrolytic capacitors C8 to C11, C21 to C24 andceramic capacitors C59 to C73. Output filter L4, C12 is usedto smooth output voltage from switching glitches. L4 is600 nH inductor in case of need can be replaced withdifferent product which enables higher dI/dt slope load. Theoutput voltage of the converter is regulated by standardshunt regulator NCP431−IC6. The regulation optocoupler

OK1 is driven via resistor R85 which defines loop gain. TheNCP431 is biased via resistor R88 in case there is no currentflowing via regulation optocoupler – which can happenbefore the nominal VOUT level is reached or duringtransients from no-load to full-load conditions. The outputvoltage is adjusted by divider R89 and R98, R99. Thefeedback loop compensation network is formed partially byresistor R95 and capacitor C51. The secondary side OVPsense circuitry is also using NCP431 reference (IC7) toachieve precise OVP trip point. The OVP threshold isadjusted by resistor divider R76, R77and R79. The biascurrent of OVP optocoupler OK3 is limited by resistor R84and IC7 is biased via resistor R82. Capacitor C30 slowsdown OVP reaction speed and helps overcome falsetriggering by noise. There are several options prepared in thePCB layout so that customer can modify demo-boardaccording to required of target application – please refer toFigure 4 and 5 for schematic that shows all options includedin the PCB. The PCB consists of a 2 layer FR4 board with70 �m copper thickness to minimize parasitic resistance insecondary side where high currents are conducted. Leadedcomponents are assembled form the top side of the board andall SMT components are place from the bottom only so thatwave soldering process can be used for production. Theboard was design to work as open frame with natural air flowcooling. The LLC transformer temperature reachesapproximately 90°C for Tambient = 25°C and full load.Forced air flow cooling management should be consideredin case the board is packed into some box or targetapplication.


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Figure 6. Evaluation Board − Top Side Components

Figure 7. Evaluation Board − Bottom Side Components


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Figure 8. Evaluation Board − Top Layer

Figure 9. Evaluation Board − Bottom Layer Blue


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Figure 10. Evaluation Board Photograph − Top View

Figure 11. Evaluation Board Photograph− Bottom View


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Figure 12. Overall Efficiency vs. Output Power

76

78

80

82

84

86

88

90

92

94

96

0 50 100 150 200 250

Eff

icie

ncy

[%

]

Output Power [W]

Overall Efficiency at 115 V AC

Overall Efficiency at 230 V AC

Table 2. EFFICIENCY DATA MEASURED AND AVERAGED FROM 10 BUILT DEMO_BOARDS

LOAD

Consumption [mW] of Efficiency [%]

@ 120 VAC @ 230 VAC

NO−LOAD < 115 mW < 125 mW

Load 250 mW 0,466 0,475

Load 500 mW 0,72 0,823

Load 20% − 4 A 90,22 91,47

Load 25% − 5 A 91,82 92,95

Load 50% − 10 A 93,39 94,36

Load 75% − 15 A 93,13 94,62

Load 100% − 20 A 92,57 94,5

4 point AVG 92,73 94,11


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The following figures illustrate conduced EMI signatures under full loading for different input line voltage levels.

Figure 13. EMI Signature Comparison @ 120 VAC & Full-load (Measured MAX Peak)

Figure 14. EMI Signature Comparison @ 230 VAC & Full-load (Measured MAX Peak)

Figures 15 to 16 are focused on transient response, whichis highly depended (when is expected correct feedback loopbehavior) on loading current slope and output optional postfilter composed of L4 and C12. In case, that higher currentslope and lower voltage drop are needed inductor L4 can be

replaced by new one with lower inductance. Figure 17 showpower supply input current shape for different input linevoltage levels under full loading. Figures 18–20 areintended to LLC stage operation.


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Figure 15. Step Load Response 20 A to 2 A − 50 A/s (Right Measured without Post Inductor)

Figure 16. Step Load Response 20 A to 2 A − 50 A/s (Right Measured without Post Inductor)

Figure 17. PFC Input Current @ 240 W Load @ 115 VAC − Left, @ 230 VAC Right

CH1 – LLC Low SideM OSFET Gate−Drive Voltage

CH2 – Output Voltage CH3 – LLC HB Node Voltage CH4 – Loading current


CH2 – Output Voltage CH3 – LLC HB Node Voltage CH4 – Loading current

CH1 – N/A CH2 – N/A CH3 – N/A CH4 – Input line current


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Figure 18. LLC Stage Start-up Sequence into Full-load Detail − Left, LCC Stage NO-LOAD Burst Detail − Right

Figure 19. LLC Stage SKIP Mode Operation at 0.5 A Load (Burst Detail) − Left, Light-load Mode Operation at 2 A Load − Right

Figure 20. LLC Stage Normal Operation 10 A Load − Left, LLC Stage Normal Operation 20 A Load − Right


CH2 – N/A CH3 – LLC HB Node Voltage CH4 – Resonant tank current






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Figure 21. PFC Vbulk Building @ 230 VAC @ 20 A Load − Left, PFC SKIP MODE at 0.5 A Load (Burst Detail) − Right

Figure 22. PFC, DCM @ 120 VAC 1.5 A Load − Left, PFC, CrM @ 120 VAC 20 A Load − Right

Figure 23. SR Waveforms during VOUT Building into Full Load − Left, SR NORMAL MODE @ Load 20 A − Right

CH1 – PFC M OSFET Gate−Drive Voltage

CH2 – Bulk Voltage CH3 – PFC M OSFET DrainVoltage

CH4 – PFC inductor current








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Figure 24. SR Waveforms during Overload from 20 A to 25 A (FB Fault 100 ms) − Left, SR Waveforms during Hard Overload from 20 A to 50 A (CS Stop) − Right

CH1 – SR1 V DS Voltage CH1 – SR2 V DS Voltage CH3 – Output Voltage CH4 – Load current

Literature• High Performance Current Mode Resonant Controller with Integrated High Voltage Drivers:

NCP13992: http://www.onsemi.com/PowerSolutions/product.do?id=NCP13992

• Power Factor Controller, High Voltage Active X2:NCP1616: http://www.onsemi.com/PowerSolutions/product.do?id=NCP1616

• Secondary Side Synchronous Rectifier Controllers:NCP4306: http://www.onsemi.com/PowerSolutions/product.do?id=NCP4306

• Voltage Reference, Programmable Shunt Regulator:NCP431: http://www.onsemi.com/PowerSolutions/product.do?id=NCP431

• N-Channel SupreMOS® MOSFET 600 V, 22 A, 165 m�

FCPF22N60NT: http://www.onsemi.com/PowerSolutions/product.do?id=FCPF22N60NT

• Power Rectifier, Soft Recovery, Switch-mode, 8 A, 600 VMSR860: http://www.onsemi.com/PowerSolutions/product.do?id=MSRF860G

• N-Channel SupreMOS® MOSFET 600 V, 13 A, 258 m�

FCPF13N60NT: http://www.onsemi.com/PowerSolutions/product.do?id=FCPF13N60NT

• Single N-Channel Power MOSFET 40 V, 130 A, 2.5 m�

NVMFS5C442NL: http://www.onsemi.com/PowerSolutions/product.do?id=NVMFS5C442NL


http://www.onsemi.com/PowerSolutions/product.do?id=NCP13992




http://www.onsemi.com/PowerSolutions/product.do?id=FCPF22N60NT

http://www.onsemi.com/PowerSolutions/product.do?id=MSRF860G

http://www.onsemi.com/PowerSolutions/product.do?id=FCPF13N60NT

http://www.onsemi.com/PowerSolutions/product.do?id=NVMFS5C442NL

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Table 3. BILL OF MATERIALS

Reference Qty. Description Value Footprint ManufacturerManufacturerPart Number Substitution

B1 1 Bridge Rectifier KBU8M Through Hole Vishay KBU8M−E4/51 Yes

C12 1 Electrolytic Capacitor 220 �F/25 V Through Hole Panasonic EEU FC1E221 Yes

C13, C31, C62 3 Ceramic Capacitor 1 nF/50 V C 0805 Various

C15, C33, C47 3 MKP Capacitor 1 �F/275 Vac Through Hole Würth Elektronik MXXP225105K310ASPB46000

Yes

C16, C38, C55 3 Electrolytic Capacitor 100 �F/450 V Through Hole Rubycon 450BXW100MEFC18X30 Yes

C17, C29 2 Ceramic Capacitor 220 pF/1 kV Through Hole Vishay S221M39SL0N63K7R Yes

C2, C26, C27, C30,C34, C57

6 Ceramic Capacitor 10 nF/50 V C 0805 Various − Yes

C3 1 Electrolytic Capacitor 220 �F/35 V Through Hole Panasonic EEU FM1V221L Yes

C32 1 Ceramic Capacitor 39 nF/50 V C 0805 Various − Yes

C36 1 Ceramic Capacitor 2.2 �F/16 V C 0805 Various − Yes

C37 1 Electrolytic Capacitor 100 �F/25 V Through Hole Panasonic EEU−TA1E101BJ Yes

C4, C25 2 Ceramic Capacitor 6.8 pF/50 V 1206 Various − Yes


C44 1 Ceramic Capacitor 100 pF/50 V C 0805 Various − Yes

C5, C19, C41, C43,C53, C54, C59, C63,

C71, C73

10 Ceramic Capacitor 100 nF/50 V C 0805 Various − Yes

C50 1 Ceramic Capacitor 470 pF/50 V C 0805 Various − Yes


C56 1 Electrolytic Capacitor 220 �F/35 V Through Hole Panasonic EEU FM1V221L Yes

C6, C20 2 Ceramic Capacitor 1 �F/25 V C 0805 Various − Yes


C7, C18 2 Metal Film Capacitor 33 nF/630 V Through Hole Epcos B32652A6333J Yes

C8, C9, C10, C11,C21, C22, C23, C24

8 Electrolytic Capacitor 1000 �F/16 V Through Hole Panasonic P15332CT ND Yes

CY1, CY2, CY3 3 Y Capacitor 22 nF/Y1 Through Hole Murata DE1E3KX222MA5BA01

D1, D7, D8, D14,D17

5 Diode MMSD4148 SOD123 ON Semiconductor MMSD4148T3G No

D12, D13 2 Schottky Diode MBR0540 SOD123 ON Semiconductor MBR0540T1G No

D19, D26 2 Schottky Diode BAT54 SOD123 ON Semiconductor BAT54T1G No

D2 1 Zener Diode 15 V SOD123 ON Semiconductor MMSZ15T1G No

D21 1 Zener Diode 4.3 V SOD123 ON Semiconductor MMSZ4V3T1G No

D22, D28 2 Power Rectifier Diode MRA4007T3G SMA ON Semiconductor MRA4007T3G No

D23 1 Ultrafast PowerRectifier Diode

MURA160 SMA ON Semiconductor MURA160T3G No

D3 1 Schottky Diode MBR2H100 SOD123 ON Semiconductor MBR2H100SFT3G No

D4 1 Standard RecoveryRectifier Diode

1N5408 Through Hole ON Semiconductor 1N5408RLG No

D5 1 Soft RecoveryRectifier Diode

MSR860 TO220 ON Semiconductor MSRF860G No

D6, D9 2 Diode NU − − − −

F1 1 FUSE HOLDER +4A/T Fuse

T−4A Through Hole Various − Yes

IC3 1 LLC Controller NCP13992 NCP1399 ON Semiconductor NCP13992AIOGEVB No

IC4, IC5 2 SynchronousRectifier Controller

NCP4306 SOIC8 ON Semiconductor NCP4306AAAZZZA No

IC6, IC7 2 Shunt Regulator NCP431 SOT23 ON Semiconductor NCP431AVSNT1G No

L1 1 Power ResonantInductor

50 �H RM8 Würth Elektronik 750370249 Yes

L15 1 Common ModeInductor

2.9 mH Through Hole ICE Components LF−28030−0029−H No

L2 1 PFC Inductor 260 �H PQ3225 Würth Elektronik 750315036 Yes


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Table 3. BILL OF MATERIALS (continued)

Reference SubstitutionManufacturerPart NumberManufacturerFootprintValueDescriptionQty.

L4 1 High Current Inductor 300 nH/30 A Through Hole Würth Elektronik WW006 Yes

L5, L6 2 EMI Inductor 90 �H Through Hole Würth Elektronik 7447013 Yes

NTC1 1 NTC Thermistor 330 k� Through Hole Vishay NTCLE100E3334JB0 Yes

OK1, OK3 2 Optocoupler FOD817B Through Hole ON Semiconductor FOD817B No

Q2, Q9, Q20, Q21 4 N−channel MOSFET NTMFS5C442 SO−8FL/DFN−5 ON Semiconductor NTMFS5C442NLTT1G No

Q3, Q5 2 N−channel MOSFET FCPF13N60 TO220 ON Semiconductor FCPF13N60NT No

Q4 1 N−channel MOSFET FCPF22N60 TO220 ON Semiconductor FCPF22N60NT No

Q6 1 N−channel MOSFET BSS138 SOT23 ON Semiconductor BSS138LT1G Yes

Q7 1 PNP Transistror BC807−16 SOT23 ON Semiconductor BC807−16LT1G Yes

Q8 1 N−channel MOSFET BSS138 SOT23 ON Semiconductor BSS138LT1G Yes

R1, R99 2 Resistor 150 k� R 0805 Various − Yes

R10, R32 2 Resistor 4.7 �/5% R 0805 Various − Yes

R100, R101, R105 3 Resistor 27 k� R 0805 Various − Yes

R102 1 Resistor 330 k� R 0805 Various − Yes

R107 1 Resistor 47 M�/5% Through Hole Vishay VR37000004704JA100 Yes

R11, R39, R104 3 Resistor 5.6 k� R 0805 Various − Yes

R126 1 Resistor 5.1 k� R 0805 Various − Yes



R150 1 Resistor 2 �/5% R 0805 Various − Yes

R18, R27 2 Resistor 1.8 M� R 0805 Various − Yes



R25 1 Resistor 47 �/5% R 0805 Various − Yes

R26, R54, R55 3 Resistor 22 �/5% R 0805 Various − Yes


R3, R5, R13, R16,R30, R34, R43, R50,R56, R57, R61, R69,

R72, R78, R94,R140, R142, R147

18 Resistor 0 � R 0805 Various − Yes

R31 1 Resistor 1 M� R 0805 Various − Yes

R35, R47 2 Resistor 1.6 M� R 0805 Various − Yes

R38 1 Resistor 0.05 �/3 W Through Hole Vishay/ Dale LVR03R0500FR50 Yes

R4, R12, R20, R33,R36, R51

6 Resistor 22 k� R 0805 Various − Yes

R42, R52, R68 3 Resistor 0 � R 1206 Various − Yes

R48 1 VARISTOR 275 VAC Through Hole Würth Elektronik 820512711 Yes


R58, R62 2 Resistor 1 �/5% R 0805 Various − Yes

R6, R15, R87, R92 4 Resistor 2.7 k� R 1206 Various − Yes


R64 1 Resistor 100 � R 0805 Various − Yes





R74, R76, R95 3 Resistor 47 k� R 0805 Various − Yes




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Table 3. BILL OF MATERIALS (continued)

Reference SubstitutionManufacturerPart NumberManufacturerFootprintValueDescriptionQty.


R8, R9, R40, R41 4 Resistor 56 �/5% R 1206 Various − Yes



R85 1 Resistor 820 � R 0805 Various − Yes


R91 1 VARISTOR strap − − − Yes

R96 1 Resistor 5.6 /5% R 0805 Various − Yes


TR1 1 LLC Transformer Lpri = 600 �H PQ3225 Würth Elektronik 750314580 Yes

U1 1 Power FactorController

NCP1616A1 SO9 ON Semiconductor NCP1616A1 No

X1 1 Wire to boardterminal

Pitch 5 mm Through Hole IMO 20.700M/2 Yes

X2 1 Wire to boardterminal

Pitch 5 mm Through Hole Lumberg KRE 02 Yes


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The evaluation board/kit (research and development board/kit) (hereinafter the “board”) is not a finished product and is not available for sale to consumers. The board is only intendedfor research, development, demonstration and evaluation purposes and will only be used in laboratory/development areas by persons with an engineering/technical training and familiarwith the risks associated with handling electrical/mechanical components, systems and subsystems. This person assumes full responsibility/liability for proper and safe handling. Anyother use, resale or redistribution for any other purpose is strictly prohibited.

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FCC WARNING – This evaluation board/kit is intended for use for engineering development, demonstration, or evaluation purposes only and is not considered by onsemi to be a finishedend product fit for general consumer use. It may generate, use, or radiate radio frequency energy and has not been tested for compliance with the limits of computing devices pursuantto part 15 of FCC rules, which are designed to provide reasonable protection against radio frequency interference. Operation of this equipment may cause interference with radiocommunications, in which case the user shall be responsible, at its expense, to take whatever measures may be required to correct this interference.

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