experiments

3
3 Previously, it has been shown that one can use the temperature ramping method (i.e., to grow the InGaN well layers and GaN barrier layers at different temperatures) to improve crystal quality of InGaN–GaN MQW. However, the proposed methods were required to stop the growth for a short period of time; an interruption during the growth of InGaN–GaN MQW might contribute to the out-diffusion and/or desorption of In atoms. In this letter, we report the use of the temperature cycling method to further improve the quality of the MQW structure and the performance of nitride-based LEDs.

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Previously, it has been shown that one can use the temperature ramping method (i.e., to grow the InGaN well layers and GaN barrier layers at different temperatures) to improve crystal quality of InGaN–GaN MQW. However, the proposed methods were required to stop the growth - PowerPoint PPT Presentation

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Page 1: Experiments

3

Previously, it has been shown that one can use the temperature ramping method (i.e., to grow the InGaN well layers and GaN barrier layers at different temperatures) to improve crystal quality of InGaN–GaN MQW.

However, the proposed methods were required to stop the growth

for a short period of time; an interruption during the growth of InGaN–GaN MQW might contribute to the out-diffusion

and/or desorption of In atoms.

In this letter, we report the use of the temperature cycling method to further improve the quality of the MQW structure and the performance of nitride-based LEDs.

Page 2: Experiments

Experiments 4

30nm GaN nucleation layer

c-plane Sapphire

0.2um Mg-dopedGaN

2um Si-doped n-GaN

1um undoped GaN layer

five periods MQWs InGaN well : 3nmGaN barrier :15nm

520 ℃

1050 ℃

1050 ℃

1050 ℃

Page 3: Experiments

Results and Discussion5

Fig. 1. Three different temperature profiles used to grow the MQW activeregions in this study.

sample temperature Profiles

Process A ramping method

Process B conventional

Process C cycling method

sample TMGaflow rate

growth time of GaN

Process A 15 sccm 90 s

Process B 5 sccm 270 s

Process C 5 sccm 270 s