experiments
DESCRIPTION
Previously, it has been shown that one can use the temperature ramping method (i.e., to grow the InGaN well layers and GaN barrier layers at different temperatures) to improve crystal quality of InGaN–GaN MQW. However, the proposed methods were required to stop the growth - PowerPoint PPT PresentationTRANSCRIPT
3
Previously, it has been shown that one can use the temperature ramping method (i.e., to grow the InGaN well layers and GaN barrier layers at different temperatures) to improve crystal quality of InGaN–GaN MQW.
However, the proposed methods were required to stop the growth
for a short period of time; an interruption during the growth of InGaN–GaN MQW might contribute to the out-diffusion
and/or desorption of In atoms.
In this letter, we report the use of the temperature cycling method to further improve the quality of the MQW structure and the performance of nitride-based LEDs.
Experiments 4
30nm GaN nucleation layer
c-plane Sapphire
0.2um Mg-dopedGaN
2um Si-doped n-GaN
1um undoped GaN layer
five periods MQWs InGaN well : 3nmGaN barrier :15nm
520 ℃
1050 ℃
1050 ℃
1050 ℃
Results and Discussion5
Fig. 1. Three different temperature profiles used to grow the MQW activeregions in this study.
sample temperature Profiles
Process A ramping method
Process B conventional
Process C cycling method
sample TMGaflow rate
growth time of GaN
Process A 15 sccm 90 s
Process B 5 sccm 270 s
Process C 5 sccm 270 s