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February 2001

2001 Fairchild Semiconductor Corporation FDS3890 Rev B(W)

FDS389080V N-Channel Dual PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designedspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventionalswitching PWM controllers.

These MOSFETs feature faster switching and lowergate charge than other MOSFETs with comparableR

DS(ON)specifications. The result is a MOSFET that is

easy and safer to drive (even at very high frequencies),and DC/DC power supply designs with higher overallefficiency.

Features

4.7 A, 80 V. RDS(ON) = 44 m @ VGS = 10 V

RDS(ON) = 50 m @ VGS = 6 V

Fast switching speed

High performance trench technology for extremely

low RDS(ON)

High power and current handling capability

S2

SO-8G2

S1G1

D2

D2D1

D1

4

3

2

1

5

6

7

8

Q1

Q2

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings UnitsVDSS Drain-Source Voltage 80 V

VGSS Gate-Source Voltage 20 V

ID Drain Current Continuous (Note 1a) 4.7 A

Pulsed 20

PD Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1.0

(Note 1c) 0.9

TJ, TSTG Operating and Storage Junction Temperature Range 55 to +175 C

Thermal Characteristics

RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/WRJC Thermal Resistance, Junction-to-Case (Note 1) 40 C/W

Package Marking and Ordering InformationDevice Marking Device Reel Size Tape width Quantity

FDS3890 FDS3890 13 12mm 2500 units

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Electrical Characteristics TA

= 25C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 2)WDSS Single Pulse Drain-Source

Avalanche EnergyVDD = 40 V, ID = 4.7 A 175 mJ

IAR Maximum Drain-Source AvalancheCurrent

4.7 A

Off CharacteristicsBVDSS DrainSource Breakdown Voltage VGS = 0 V, ID = 250 A 80 V

BVDSSTJ

Breakdown Voltage TemperatureCoefficient

ID = 250 A, Referenced to 25C 86 mV/C

IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 A

IGSSF GateBody Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

IGSSR GateBody Leakage, Reverse VGS = 20 V VDS = 0 V 100 nA

On Characteristics (Note 2)VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 2 2.3 4 V

VGS(th)TJ Gate Threshold VoltageTemperature Coefficient ID = 250 A, Referenced to 25C 6 mV/C

RDS(on) Static DrainSourceOnResistance

VGS = 10 V, ID = 4.7 A

VGS = 6.0 V, ID = 4.4 A

VGS = 10 V, ID = 4.7 A, TJ = 125C

34

37

60

44

50

82

m

ID(on) OnState Drain Current VGS = 10 V, VDS = 5 V 20 A

gFS Forward Transconductance VDS = 10 V, ID = 4.7 A 24 S

Dynamic CharacteristicsCiss Input Capacitance 1180 pF

Coss Output Capacitance 171 pF

Crss Reverse Transfer Capacitance

VDS = 40 V, V GS = 0 V,

f = 1.0 MHz

50 pF

Switching Characteristics (Note 2)td(on) TurnOn Delay Time 11 20 ns

tr TurnOn Rise Time 8 16 ns

td(off) TurnOff Delay Time 26 50 ns

tf TurnOff Fall Time

VDD =40 V, ID = 1 A,VGS = 10 V, RGEN = 6

12 25 ns

Qg Total Gate Charge 25 35 nC

Qgs GateSource Charge 4.5 nC

Qgd GateDrain Charge

VDS = 40 V, ID = 4.7 A,VGS = 10 V

5.8 nC

DrainSource Diode Characteristics and Maximum RatingsIS Maximum Continuous DrainSource Diode Forward Current 1.3 A

VSDDrainSource Diode ForwardVoltage

VGS = 0 V, IS = 1.3 A (Note 2) 0.74 1.2 V

Notes:

1. RJA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RJC

is guaranteed by design while RCA

is determined by the user's board design.

a) 78C/W whenmounted on a 1in

2

pad of 2 oz copper

b) 125C/W whenmounted on a .04 in

2

pad of 2 oz copper

c) 135C/W when mounted on aminimum pad.

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%

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Typical Characteristics

0

4

8

12

16

20

0 1 2 3 4

VDS, DRAIN-SOURCE VOLTAGE (V)

ID,DRAINCURRENT(A)

5.0V

4.0V

VGS = 10V

3.5V

0.8

1

1.2

1.4

1.6

1.8

2

0 4 8 12 16 20

ID, DRAIN CURRENT (A)

RDS(ON),NORMALIZED

DRAIN-SOURCEON-RESISTANC

E

VGS = 4.0V

4.5V5.0V

10V

6.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.2

0.6

1

1.4

1.8

2.2

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (oC)

RDS(ON),NORMALIZED

DRAIN-SOURCEON-RESISTANC

ID = 4.7A

VGS = 10V

0

0.025

0.05

0.075

0.1

2 4 6 8 10

VGS, GATE TO SOURCE VOLTAGE (V)

RDS(ON),ON-RESISTANCE(OHM)

ID = 2.4 A

TA = 125oC

TA = 25oC

Figure 3. On-Resistance Variation withTemperature.

Figure 4. On-Resistance Variation withGate-to-Source Voltage.

0

4

8

12

16

20

1 2 3 4 5

VGS, GATE TO SOURCE VOLTAGE (V)

ID,DRAINCURRENT(A)

TA = 125oC

-55

o

C

VDS = 5V

25oC

0.001

0.01

0.1

1

10

100

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

IS,REVERSEDRAINCURRENT(A)

TA = 125oC

25oC

-55oC

VGS = 0V

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variationwith Source Current and Temperature.

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Typical Characteristics

0

2

4

6

8

10

0 6 12 18 24 30

Qg, GATE CHARGE (nC)

VGS,GATE-SOURCEVOLTAGE(V)

ID = 4.7A VDS = 10V

40V

20V

0

500

1000

1500

2000

0 20 40 60 80

VDS, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE(pF)

CISS

CRSSCOSS

f = 1MHz

VGS = 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

ID,DRAINCURRENT(A)

DC

10s

1s

100ms

100sRDS(ON) LIMIT

VGS = 10V

SINGLE PULSE

RJA = 135oC/W

TA = 25oC

10ms

1ms

0

10

20

30

40

0.01 0.1 1 10 100

t1, TIME (sec)

P(pk),PEAKTRANSIENTPOWER(W)

SINGLE PULSE

RJA = 135C/W

TA = 25C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse MaximumPower Dissipation.

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

r(t),NORMALIZEDEFFECTIVE

TRANSIENTTHERMALRESISTANCE

RJA(t) = r(t) + RJA

RJA = 135C/W

TJ - TA = P * RJA(t)

Duty Cycle, D = t1/ t2

P(pk)

t1t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.Thermal characterization performed using the conditions described in Note 1c.Transient thermal response will change depending on the circuit board design.

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TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:

1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.

2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Formative orIn Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

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