fdx and finfet: differentiated technologies for diverging...

FDX and FinFET:

Differentiated Technologies for Diverging Markets

Dr. Rutger Wijburg, SVP and General Manager Fab 1, Dresden

© 2016 GLOBALFOUNDRIES

These trends are defining the „new normal“ in our industry …

Revenue growth is slowing:

CAGR 1985 – 2012: 10.1%

exp. CAGR 2013 – 2018: 4.3%

ASPs continue to be under pressure.

New market segments start with low ASPs to begin with

Cost of going from 65nm to 20nm:

Fab cost up 168%

Process Dev cost up 225%

Chip Design cost up 341%

Increasing complexity of Hardware/Software co-development

Sources: EETimes http://www.eetimes.com/document.asp?doc_id=13303741

http://www.eetimes.com/document.asp?doc_id=1330374


… while the challenges keep multiplying

We do not see when EUV and if 450 will deliver

sufficient cost improvements.

Shrinking no longer results automatically in

performance, power and cost benefits.

Traditional logic growth markets are flattening.

IoT market requires low power & low cost

as well as collaboration along value chain.

Memory poses new challenges with new

materials (e.g MRAM or 3D NAND).

Not surprisingly, the trend towards consolidation continues

2

The key growth drivers for markets of the future

• One technology doesn’t fit all

• Intelligence is being built in

• Understand and anticipate

the needs of the end-markets

Connectivity and AI

Emergence of Intelligent Computing

Developments in Pervasive Computing

AR / VR

© 2016 GLOBALFOUNDRIES 3

Market Shifts

Mobile saturation

forcing System Integration

5G driving high performance

RF Network Infra and variable

performance mini Base-Stations

AI / DNN at the Edgerequiring more Performance,

Battery / ULL savings, and

lower system costs

Data Center Servers

and HP Computing requires

maximum performance 100%

of the time

Increasing semi content

in Automotive ADAS,

Body Electronics, IVI

AI requires Acceleration

of Increased Performance

and Tighter Memory

Integration

IoT mass-market adoption

driven by Low Power, RF

connectivity, and full-system

integration

Gaming experiences on

Consoles, Displays, Wearables

moving to AI and AR / VR

CLIENTS

AutomotiveIoTMobile

DATA CENTERS

Compute / CloudsWired / Wireless

NETWORKS

How does the GLOBALFOUNDRIES

roadmap support this?


7nm FinFET

16/14nmFinFET

28nm

55nm40nm

• High Performance Computers/Servers, Graphics, High-end Mobile drove adoption of 16/14nm FinFET

• Servers CPUs will need 7nm performance and drive 7nm FinFET adoption

Cost of development is a huge barrier

Don’t need performance all the time, but needUltra-Low-Power in all modes

Need Analog/RF/NVM integration for connectivity

However, It is not well suited to large number of applications…

Our roadmap reflects the real market-need for differentiation


7nm FinFET

16/14nmFinFET

28nm

55nm40nm

• High Performance Computers/Servers, Graphics, High-end Mobile drove adoption of 16/14nm FinFET

• Servers CPUs will need 7nm performance and drive 7nm FinFET adoption

However, it is not well suited for a large number of applications…

Our roadmap reflects the real market-need for differentiation

Low power Low cost



Our roadmap offers multiple tracks -

reflecting different market requirements

http://www.3dincites.com/wp-content/uploads/forkintheroad-1024x653.png

7

Performance & Density at Any Cost – Servers, Networking,

Graphics, High-end Mobile

7nmFinFET

14nmFinFET

28nm HK& PolySi

Higher Performance and Power Reduction

at lower Die-Cost over 14nm and 10nm

2nd generation FinFET

Logic density over

17M gates/mm2

Enables highest absolute performance

>3.5GHz A72 performance

(>30% over 14nm)

Source: GLOBALFOUNDRIES internal assessment© 2016 GLOBALFOUNDRIES

Track 1 - FinFET

8

Cost-Effective Performance for Connected and Low Power

Embedded Applications



7nmFinFET

14nmFinFET

28nm HK& PolySi

40/55nmeNVM

eMRAM

22FDX®


• More than 50 customers

engaged

• FinFET performance at

28nm die cost

• Energy efficiency

– Ultra-low voltage (0.4v)

– Ultra-low leakage (1pA/um)

• Software-controlled body-bias

• RF integration

Track 2 - FDX

9





eNVM

12FDX™

7nmFinFET

14nmFinFET

28nm HK& PolySi

40/55nmeNVM

eMRAM

22FDX®


Track 2 – FDX extending to 12nm

10


7nm FinFET Platform OverviewStrong value proposition compared to 14nm

Total

Power

• High performance tuned

− Multiple Work-Functions

− Up to 17 levels of metal

− High speed SRAM

− Advanced MIMCAP

• Optical litho based with EUV compatibility

• Fully enabled platform:

− ASIC design services

− 2.5D/3D packaging

Device

Performance

14nm7nm

>30%

>60%

11

22FDX™ Platform – Introduced One Year Ago

70% lower power than 28HKMG

20% smaller die than 28nm bulk planar

20% lower die cost than 16/14nm

FD-SOIPlanar process similar to bulk

Ultra-thin Buried

Oxide Insulator

Fully Depleted

Channel for

Low Leakage

Architected for:• Emerging products in IoT, Mobile, and RF

Enables differentiated customer solutions:

• FinFET-like performance at 28nm cost

• Energy efficiency– Ultra-low voltage (0.4v)

– Ultra-low leakage (1pA/um)

• Design flexibility and integration– Software-controlled body-bias

– RF integration


Our 22FDX™ execution and value proposition is strong

PDK version 0.6 released in August

50 customers engaged - customer prototyping underway in Fab 1

Volume Production of first platform in 2017

Device performance at target

Logic & SRAM yields ahead of schedule; close to 28nm mature yields

Ultra-low power, ultra-low voltage operation, and ultra-low leakage

70% lower power vs. 28nm HKMG

0.4v logic operation

~1pA/um

Ultra-high performance

FinFET performance via forward body-bias

Integrated RF and Analog: Reduced system cost and power

Superior RF/Analog characteristics enables 5G applications



22FDX/12FDX low power RF SOC technology

FD-SOI (22FDX & 12FDX) is a truly

differentiating technology for

RF SOC applications

– Low Vt and Steep subthreshold slope = 90mV/Decade

– Low voltage power supply Vdd=0.8V

– Unique back gate bias threshold voltage adjust

– Excellent Analog device characteristics

– Excellent RF with High fT and high fMAX

NMOS

BOX

Substrate

Si-P

HK/MGPoly-Si

NiSiNiSi

Si-Channel

PMOS

NiSi

SiGeB

BOX

SiGe Channel

Substrate

0

0,2

0,4

0,6

0,8

1

1,2

1,4

Masks (a.u.) Performance @ Iso-Power (a.u.)

FDX best for low power, low cost solutions

With body-biasing delivers FDX FinFET-like performance

• Next node performance with 40 percent fewer masks

• 10nm FinFET performance at less than 16nm FinFET cost

10FF12FDX(w/BB)

14/16FF22FDX(w/BB)

10FF

12FDX

14/16FF

22FDX

40% fewer masksLower mask cost

Reduced cycle time

FinFET performance and powerFDX has superior RF/Analog to FF

Software controlled body-bias14

Wired / Wireless

COMMUNICATIONS NETWORKSMARKETS / APPLICATIONS

AutomotiveIoTMobile

DATA CENTERS

Compute / Clouds

Market shifts – favorable to FDXTM

Mobile saturation forcing System Integration

IoT mass-market adoption driven by Low Power, RF

connectivity, and full-system integration

Increasing semi content in Automotive ADAS, Body

Electronics, IVI

AI / DNN at the Edge requiring more Performance,

Battery / ULL savings, and lower system costs

5G driving high performance RF Network Infra and variable

performance mini Base-Stations

Gaming experiences on Consoles, Displays, Wearables moving

to AI and AR / VR

AI requires Acceleration of Increased Performance and Tighter

Memory Integration

15

Ecosystem and Initial Contributing Partners

To facilitate FDX SoC design

and reduce time to market:

• Creates market place for FDX solutions

• Provides easy access to plug and

play solutions

• Minimizes customer development costs

• Lowers barriers of migration from

bulk nodes

• Partners take advantage of FDX growth

IP

ASIC

EDA

OSAT

Design

Services

System

IP

Customers


22FDX® – eMRAM

• 1,000x faster write speeds

• 1,000x higher endurance

• Scalable beyond 22nm; planned for both

FinFET and FDX platforms

• Versatile – utilize for both code storage

and working data

• Accelerates real-time vision processingand 3D mapping updates






eNVM

12FDX™

7nmFinFET

14nmFinFET

28nm HK& PolySi

40/55nmeNVM

eMRAM

22FDX®


Trademark Attribution

GLOBALFOUNDRIES®, the GLOBALFOUNDRIES logo and combinations thereof, and GLOBALFOUNDRIES’ other trademarks and service marks are owned by GLOBALFOUNDRIES Inc. in the United States and/or other jurisdictions. All other brand names, product names, or trademarks belong to their respective owners and are used herein solely to identify the products and/or services offered by those trademark owners.

© 2016 GLOBALFOUNDRIES Inc. All rights reserved.

Thank you for your interest!

fdx and finfet: differentiated technologies for diverging...

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