final program book - imid.or.kr · minho sohn, vp, marketing udc: mike hack , vp, business...

www.imid.or.kr

Final Program Book

Organized by

The Korean Information Display Society(KIDS) The Society for Information Display(SID) Korea Display Industry Association(KDIA)

The 18th International Meeting on Information Display

2 The 18th International Meeting on Information Display

CONTENTS

Welcome Message ·········································································· 4Program Overview - Tutorials ·················································································· 6 - Workshops ············································································· 6 - Keynote Addresses ································································· 7 - Display Industry Forum ·························································· 8 - Young Leaders Conference I & II ··········································· 9 - YLC Awards ············································································ 9 - Social Events ··········································································· 9 - IMID 2018 Awards ······························································· 10IMID 2018 Awarded Papers ························································· 11Useful Information - Venue ··················································································· 12 - Registration ·········································································· 12 - Internet ················································································· 13 - Tax ························································································· 13 - Tipping ················································································· 14 - Electricity (220V) ·································································· 14 - Telephone ············································································· 14 - Emergency Phone Number ·················································· 14Information on Technical Program ··············································· 15Keynote Addresses ········································································ 16Tutorials & Workshops ·································································· 20Session Programs (Aug. 29, 2018/ Wed.) 01. OLED Fundamentals ························································· 21 02. QD-based Electroluminescence ······································· 24 03. Touch and Interactive Displays I ······································ 26 04. 2D Materials ····································································· 28 05. Near-Eye Display for AR/VR/MR ······································· 30 06. Advanced LED Fabrications ············································· 32 07. Organic Transistors I ························································· 34 08. Novel Materials for Stretchable/

Deformable Electronics ···················································· 36 09. OLED Display & Device Engineering ································ 38 10. New & Emerging QD Technologies ································· 40 11. Touch and Interactive Displays II ······································ 42 12. Perovskite Materials ························································· 44 13. Holographic Near-Eye Displays ········································ 46 14. QD, OLED, and Lighting ·················································· 48 15. Si Transistors I ··································································· 51 16. Smart Processing for Stretchable/

Deformable Electronics ···················································· 53Session Programs (Aug. 30, 2018/ Thu.) 17. OLED Emissive Materials ·················································· 55 18. Perovskite and QD-based Devices and Stability ·············· 57 19. Human Factors for Displays ············································· 59 20. Micro LEDs I ······································································ 61 21. Display Industry Forum ···················································· 63 22. QD-based Solar Cells ······················································· 64 23. Oxide Transistors I ···························································· 66

August 28-31, 2018 / BEXCO, Busan, Korea 2018 3

CONTENTS

24. Wearable Devices with Stretchable/Deformable Structures ··················································· 69

25. OLED Materials Engineering ·········································· 71 26. Photoluminescence Application of QDs ························ 73 27. Display Metrologies ························································ 75 28. Micro LEDs II ··································································· 77 29. Display Industry Forum ··················································· 79 30. Young Leaders Conference I ·········································· 80 31. Organic Transistors II ······················································ 82 32. Innovative 3D Displays I ·················································· 84 33. OLED Optics ···································································· 87 34. Transparent/Flexible Displays (OLED) ····························· 89 35. High Resolution Driving Technologies ··························· 91 36. LC Optical Components ················································· 93 37. Display Industry Forum ··················································· 95 38. Young Leaders Conference II ········································· 97 39. 2D Transistors I ······························································· 99 40. Light Field Display Techniques ····································· 101Session Programs (Aug. 31, 2018/ Fri.) 41. TADF Developments ····················································· 104 42. Transparent/Flexible Displays ········································ 106 43. Advanced Driving Technologies ··································· 108 44. LC Materials ·································································· 110 45. Process Technology for OLED Manufacturing ············· 113 46. Advanced Micro-LED Technologies ······························ 114 47. 2D Transistors II ···························································· 116 48. Innovative 3D Displays II ··············································· 118 49. OLED Processes & Device Fabrications ························ 121 50. Transparent/Flexible Displays (Display Backplane) ······· 123 51. Low Power & Signage Displays ···································· 125 52. LC Physics ····································································· 127 53. High Throughput Display Manufacturing ··················· 129 54. Perovskite/OPV Solar Cells ··········································· 131 55. Oxide Transistors II ························································ 133 56. Applications of 3D Displays ········································· 136 57. OLED New Applications ··············································· 139 58. Transparent/Flexible Displays

(Materials & Processes) ················································· 141 59. Novel Flexible and Printed Devices ······························ 143 60. High Performed LCD Technologies ······························ 145 61. Ink Printing in the Display Manufacturing ··················· 147 62. Next-generation Energy Devices ·································· 149 63. Si Transistors II ······························································ 151 64. Holographic Display Techniques ·································· 153Poster Session I (Aug. 29, Wed. / 2018) ······························ 156Poster Session II (Aug. 30, Thu. / 2018) ······························· 177Poster Session III (Aug. 31, Fri. / 2018) ································ 199IMID 2018 Committees ························································ 221IMID 2018 Invited Papers ····················································· 229Author Index ········································································· 242


Welcome Message

On behalf of the Organizing Committee of the 18th International

Meeting on Information Display (IMID 2018), we are very much

honored and delighted to welcome you to the 18th conference.

The IMID 2018 will be held at the Exhibition Center I, BEXCO,

Busan, Korea from August 28 to 31, 2018.

The IMID has been held every year since 2001 and organized by

the Korean Information Display Society (KIDS), the Society for

Information Display (SID), and the Korea Display Industry

Association (KDIA). The IMID has become a premier conference

with more than 2,000 attendees each year, where many academic,

industry, and business leaders meet to share an insight into the

recent research and technologies on information display.

In the IMID 2018, we have received near 700 abstracts including

distinguished invited papers from all over the world, which make

the IMID 2018 an excellent program. Also, this conference received

generous supports from many sponsors and exhibitors, who greatly

helped to make the IMID 2018 a successful event. We would like

to take this opportunity to express our personal appreciation for

your participation and support for the IMID 2018.

Special programs for this year include the Quantum Dots,

Micro-LEDs, AR/VR/MR, and Stretchable/Deformable Materials and

Electronics with Young Leaders Conference and Display Industry

Forum. And, a Special Exhibition will be held on an even larger

scale than ever. It features three themes that are 1) Enterprise

Exhibition 2) SF-Zone, and 3) Special Zone (Media Art Zone and

AR&VR Zone). We sincerely hope that the IMID Special Exhibition

Welcome Message


Welcome Message

will be an exciting opportunity to gain diverse information and

knowledge for future display technologies.

Busan, the host city of the IMID 2018, is known as a newly

developed ocean city attracting millions of people to the beach

annually. We provide many attractive social events for participants

to experience and enjoy the Korean culture. We hope that you will

take these opportunities by joining us the social event programs.

Once again, we sincerely welcome all of you and appreciate your

participation and support for the IMID 2018. We hope your

attendance at the IMID 2018 is enjoyable and memorable with a

fruitful professional experience.

Sung-Tae Shin

General Chair of IMID 2018Professor of Korea University

Jun SoukGeneral Co-Chair of IMID 2018

Director of SID Korea Chapter


Program Overview

Tutorials

10:00~17:30, August 28 (Tue.), 2018 / 2F, Room A (#211~213)

No. Assigned Time (90mins) Speaker Presentation Title

T1 10:00~11:30Prof. Yajie Dong

(Univ. of Central Florida, USA)

Quantum Dot Materials and Devices for Display and

Beyond

T2 11:30~13:00Prof. Min Chul Suh

(Kyung Hee Univ., Korea)Fundamentals of OLEDs

T3 14:30~16:00Dr. Achin Bhowmik

(Starkey Hearing Technologies, USA)

Virtual, Augmented, and Mixed Reality Technologies:

Requirements, Status, and Outlook

T4 16:00~17:30Prof. Zhaojun Liu (Southern Univ. of

Science and Tech., China)Introduction to Micro-LEDs

※ T3 Session will be run through video lecture.

Workshops

10:00~17:30, August 28 (Tue.), 2018 / 2F, Room B (#214~216)

No. Assigned Time (90mins) Speaker Presentation Title

W1 10:00~11:30Dr. Pawel E. Malinowski

(IMEC, Belgium)

Display++: New User Interfaces Enabled by AMOLED Frontplane

Integration

W2 11:30~13:00

Prof. Jianfeng Zang (Huazhong Univ. of

Science and Tech., China

Fundamentals of Flexible and Stretchable Electronics

W3 14:30~16:00Prof. Jianpu Wang (Nanjing Tech Univ.,

China)

How could perovskite LEDs challenge organic LEDs?

W4 16:00~17:30

Dr. Armin Wedel (Fraunhofer Inst. for

Applied Polymer Research, Germany)

New Technologies for Colouring in Displays

Program Overview


Program Overview

Keynote Addresses

15:40~17:40, August 29 (Wed.), 2018 / 2F, Auditorium

Keynote I: 15:40~16:10Jin-Oh Kwag(EVP, Samsung Display Co., Ltd., Korea)

The Infinite Evolution with "Display"

Keynote II: 16:10~16:40Charles Li(CEO, PlayNitride, Taiwan)

MicroLED - The Ultimate Display Technology

Keynote III: 16:40~17:10Stefan Peana(Technologist, Dell, USA)

Front of Screen Innovation Driving Consumer Experience

Keynote IV: 17:10~17:40Steven Bathiche(CVP, Microsoft Corp., USA)

Evolution of Surface Computing


Program Overview

Display Industry Forum

09:00~17:30, August 30 (Thu.), 2018 / 3F, Room E (#311~312)

Time Session Title Speakers

8:30~ Registration

09:00~09:05 IMID Representative Welcome

09:05~09:10 Conference Chair Welcome

Session 1. Display Market Outlook

9:10~10:30 Session Chair:DSCC

DSCC Korea:Calvin Lee, Director

Samsung Securities :JungHoon Chang, Senior analyst

Nomura Financial Investment : Chris Chang, VP

10:30~10:45 Networking Break

Session 2. TV Market & Technology Outlook


DSCC:Bob O'Brien, Co-Founder & President

LG Display:KyuYoung(Stephen) Ko, VP /

Head of TV Marketing Division

12:10~13:00 Lunch(※ The Lunch box will be provided during the conference)

Session 3. Supply Chain Executive Session


AP Systems:Chiwoo Kim, President/CTO

Corning Precision Materials:Minho Sohn, VP, Marketing

UDC:Mike Hack, VP, Business Development

Session 4. Smartphone Market and Technology Outlook


DSCC:Yoshio Tamura, Co-Founder & President of Asian Operations

Sigmaintell:Ellike Chen, VP, Small &

medium size display market research

Solip Tech:Byeong-Soo Bae, CEO

Session 5. Technologies Enabling Next Generation Displays - Foldable, QD CFs, QLEDs, MicroLEDs and more


SCHOTT:Mathias Mydlak, Doctor, Global Business Development Manager

Merck:Dong-Mee Song, Merck Technical

Marketing Manager

GIST:Dong-Sun Lee, Professor

17:30~18:30 Networking Reception(※ Confirmed Speakers or Companies Only)


Program Overview

Young Leaders Conference (YLC)

YLC Session I: 11:00~12:40, August 30 (Thu.), 2018 /3F, Room F (#313)

YLC Session II: 15:50~17:05, August 30 (Thu.), 2018 /3F, Room F (#313)

Young Leaders Conference (YLC) has been offered to budding

scientist and student who would like to share and discuss their

research result. YLC Sessions were divided into two categories this

year. YLC session I has been assigned invited talk by budding scientist.

And student will give a presentation in YLC session II. Especially YLC

Session II, after oral presentations, outstanding presenter among YLC

applicants will be selected by committees based upon their research

originality and technical significance. In addition, Best Presentation

Award will be given right after the session.

YLC Awards

Grade Numbers Prize (per paper)

Gold 1 Paper KRW 500,000

Silver 2 Papers KRW 300,000

Bronze 2 Papers KRW 100,000

To be selected the best presentation award, the presentation will be

put to a spot poll (Vote) by participants and reviewed by professional

experts. So, it means you can invite your co-author and colleagues

in this session.

Social Events

Opening Ceremony

15:10~15:40, August 29 (Wed.), 2018 / 2F, AuditoriumKeynote Addresses will be followed by this event. Do not miss it!

Special Tour

19:00~21:00, August 29 (Wed.), 2018

※ You should come to the lobby at 2B Hall, Exhibition Center I, BEXCO by 18:30 for bus boarding process.

※ The bus will leave at 19:00.

Banquet

18:30~20:30, August 30 (Thu.), 2018 / 2F, Grand Ballroom, Paradise Hotel, Busan※ Participants are required to show the 'Banquet ticket' at the

entrance.


Program Overview

IMID 2018 Awards

• Merck Award

• Merck Young Scientist Award

• KIDS Awards (Sponsored by LG Display & Samsung Display)

• UDC Innovative Research Award in Organic Electronics

• UDC Pioneering Technology Award in Organic Electronics

The awardees have been selected from papers submitted to IMID

2018 based upon their originality and the technical significance to

information display industry. The Merck Awards will be presented at

the Opening Ceremony on Wednesday, 29 August, 2018 in

Auditorium (2F). The KIDS Awards will be presented at the Poster

Session II on Thursday, 30 August, 2018 at 2B Hall, Exhibition Center

I, BEXCO and the UDC Awards will be presented at the Banquet on

Thursday, 30 August, 2018 in Paradise Hotel Busan.

• Best Poster Awards

IMID 2018 will present the Best Poster Awards to the nominated

presenters during the conference. The assessment will be conducted

onsite by the judges. The award certificate will be given at the Poster

Session I, II, III by the technical program chair of IMID 2018.


IMID 2018 Awarded Papers

Awards Winners

Merck Awards

Merck AwardC59-2 Kyung Cheol Choi (KAIST, Korea)

Related Paper: Fibertronic Approach for Wearable AMOLEDs

Merck YoungScientist Award

G55-2 You Seung Rim (Sejong Univ., Korea)Related Paper: Solution-Processed Oxide TFTs for Sensors

KIDSAwards

Gold (SDC)

B42-1 Review of Networked Nanowire Fabrication Using Cracked Template and Applications to Transparent Electrodes and SensorsYeong-gyu Kim, Byung Ha Kang, Hee Jun Kim, Young Jun Tak, Won-Gi Kim, and Hyun Jae Kim (Yonsei Univ., Korea)

Gold (LGD)

G23-3 Orders of Magnitude Enhancement in Conductivity-Tuning in InGaZnO TFTs by SiNX Passivation and Dual Gate ModulationsChangDong Chen and Chuan Liu (Sun Yat-sen Univ., China)

Silver (SDC)

C43-3 Design and Evaluation of High Resolution Matrix Backlight for Excellent Local-Dimming Results and Uniformity of LCDsMaxim Schmidt, Chihao Xu, Michael Grüning, Julian Ritter (Saarland Univ., Germany), and Andreas Hudak (STZ Electronic Systems GmbH., Germany)

Silver (LGD)

G47-4 Polymer Co-Sputtered IGZO Thin Film Transistors with Improved Water Resistance and Positive Bias Stress StabilityJae Won Na and Hyun Jae Kim (Yonsei Univ., Korea)

Bronze (SDC)

H24-4 Deformable and Biocompatible Electronics Using a Biodegradable Natural MaterialSung Pyo Park, Young Jun Tak, Hee Jun Kim, and Hyun Jae Kim (Yonsei Univ., Korea)

Bronze (LGD)

D12-3 Photo Aligned Nano Rod Emissive Films by Printing for LCD BacklightingSwadesh Kumar Gupta, Maksym Prodanov, Valerii Vashchenko, Vladimir G. Chigrinov, Hoi Sing Kwok, and Abhishek Kumar Srivastava (HKUST, Hong Kong)

UDCAwards

UDC Innovative Research

Award in Organic Electronics

B42-3 Highly Polarized Emission by Vacuum Evaporation of Organic Light-Emitting CompoundByung-Jun Kang, Dong-Myung Lee, Chang-Jae Yu (Hanyang Univ., Korea), E-Joon Choi (Kumoh Nat'l Inst. of Tech., Korea), and Jae-Hoon Kim (Hanyang Univ., Korea)

UDC Pioneering Technology Award in Organic Electronics

A1-5 Mechanism of Exciplex Diffusion in Organic FilmsHwang-Beom Kim and Jang-Joo Kim (Seoul Nat'l Univ., Korea)

IMID 2018 Awarded Papers


Useful Information

Venue

The IMID 2018 is taking place at the Busan Exhibition and Convention Centre (BEXCO) in Busan, Korea. The BEXCO is located 30 minutes from Gimhae International Airport and is located in the heart of the Haeundae Beach Resort, one of South Korea's most famous hospitality sites. BEXCO, opening its doors in May 2001 in the prized location of Haeundae, Korea's greatest tourist spot, continues to set new records for events hosted each year, successfully hosting large-scale international exhibitions, international conferences, a variety of small and medium-scale conferences, corporate events, and others. Based on this continued success, BEXCO is fast establishing itself as "Asia's leading exhibition and convention hub."

Registration

Registration fee for the conference includes admission to all sessions except for tutorials, workshops, and display industry forum, entrance to the special exhibition and opening ceremony as well as keynote addresses. We also provide a conference kit.

• On-Site Registration FeeConference On-Site Registration

RegularKIDS / SID Member USD 650

Non-Member USD 750

StudentKIDS / SID Member USD 200

Non-Member USD 220

Useful Information


Useful Information

• Hours of OperationDate Time

August 28 (Tue.) 08:30~18:00

August 29 (Wed.) 08:00~18:00

August 30 (Thu.) 08:00~18:00

August 31 (Fri.) 08:00~17:30

• Name BadgeFor security purposes, participants must wear their name badges during the conference. If your badge needs any correction, please visit the registration desk for a replacement. There will be staff to check your badge at every gate of scientific rooms and special exhibition (2B Hall).

• Conference KitConference kit is distributed at the kit desk in the lobby of 1F (right beside the registration desk). After registration, please show your congress kit coupon to receive your kit, which includes a Final Program Book, USB Proceedings, and so on.

Cloak & Preview Room

You can store you luggage in the cloakroom #B011 after 14:00, August 29 (Wed.). And if you want to check your presentation material, you can also use the same room.

Internet

• Internet LoungeInternet Lounge is located in 2B Hall (1F) during the special exhibition (Aug. 29 ~ Aug. 31, 2018). All participants will be able to use computers and the internet during special exhibition schedule.

• Wi-FiFree Wi-Fi is available for IMID 2018 participants.

Tax

Value Added Tax (VAT) is levied on most goods and services at a standard rate of 10% and is included in the retail price. In tourist hotels, this 10% tax applies to meals and other services and is added into the bill.


Useful Information

Tipping

Tipping is not a traditional custom in Korea. A 10% service charge will be added to your bill at all tourist restaurants and hotels. It is also not necessary to tip a taxi driver unless he assists you with luggage or provides an extra service.

Electricity (220V)

The electricity supply commonly used in Korea is the 220-volt 60Hz system. Because most newly built hotels and houses have the 220-volt wiring installed, you are advised to check your electronic equipment beforehand.

Telephone

Step 1 Determine what time it is in Korea before you call.(9 hours ahead of Greenwich Mean Time.)

Step 2 Dial 001, the international access code.

Step 3 Dial 82, the country code of Korea.

Step 4 Dial the area code of the city you wish to call with 0 removed.[Seoul: 2, Daejeon: 42, Busan: 51]

Step 5 Dial the remaining digits.

※ 001(International Access Code) + Country Code + Area Code + Remaining Digits

EX) Calling Secretariat of IMID 2018, please refer to the following steps; +82-42-472-7460.

Emergency Phone Number

- Medical Emergency: 1339- Emergencies for Fire, Rescue & Hospital Service: 119- Police: 112- First Aid Services: 129


Information on Technical Program

Advance Preparation

Oral presentation speakers including all kinds of programs are required to upload the presentation file to the laptop in the session room at least 15 minutes prior to the session.

Presentation Time

• Keynote: 30 minutes• Tutorials: 90 minutes• Workshops: 90 minutes• Invited Talk: 20 minutes for presentation and 5 minutes for Q&A• Oral Presentation: 10 minutes for presentation and 5 minutes for

Q&A

Poster Sessions

The presentation code of each paper will be shown on the board and adhesive tapes will be provided in the poster session area. Poster authors are responsible for creating, preparing, and transporting their poster to the conference. They also are required to preside at their poster panels during the session for discussion with participants.

Place: 2B Hall (1F) Poster Session I Poster Session II Poster Session III

Date Aug. 29 (Wed.) Aug. 30 (Thu.) Aug. 31 (Fri.)

Put-up Time 08:00~12:00

Presentation Time 13:20~14:50 14:00~15:30

Take-down Time 16:00~17:30

Information on Technical Program


Keynote Addresses

Keynote Addresses

Date : August 29 (Wednesday), 2018Time : 15:40~17:40Room : Auditorium (2F)Chairs : Jeong-Ik Lee (ETRI, Korea)

Yong-Young Noh (Dongguk Univ., Korea)

Keynote I 15:40~16:10

The Infinite Evolution with “Display”

Jin-Oh Kwag

(EVP, Samsung Display Co., Ltd., Korea)

<Abstract>

There are many points in common between the origin of living organism and display. Through learning about the common features they have, we will estimate the looks of the future world that we will soon encounter and further discuss the looks of future technology of display. And we also discover about Hyper-connected world which created by IoT technology, it will enable people to receive any information anywhere they want through the interworking devices. In this presentation, we can recognize display will be placed as a main component and we can expect it to be in the center of the future hyper-connected world.

<Biography>

• Education - Ph.D of Solid State Physics, Seoul National University

• Professional Experience - 2017 EVP, Research Center of SDC - 2015 EVP, OLED Development Center of SDC - 2012 SVP, OLED Development Center of SDC - 2012 VP, OLED Product Development Team of SDC - 2009 VP, Development Team of SMD - 2008 VP, Mobile Display Development Team of SEC - 1987 Joined Samsung (LCD Development Team of SDI)


Keynote Addresses

Keynote Addresses



Keynote II 16:10~16:40

MicroLED - The Ultimate Display Technology

Charles Li

(CEO, PlayNitride Inc., Taiwan)

<Abstract>

MicroLED display is an emerging technology with high brightness, wide color gamut, high aperture ratio, and best reliability. In additional to traditional display applications, MicroLED display can be used for innovative display technology, such as transparent display, sports watch, ultra large size cinema, automotive, and many new display scenarios. In the MicroLED ecosystem, PlayNitride Inc.has established MicroLED technology solution – PixeLED Display, which includes wafer epitaxy, chip process, and mass transfer technology. We also invented addressable mass transfer repair solution to achievezero defect display. MicroLED display can fulfill all display required features, and it is believed to be the ultimate display technology in the near future.

<Biography>

Dr. Yun-Li (Charles) Li is CEO and co-founder of PlayNitride Inc., a company provides ODM services of PixeLED technology for next generation, high performance display technology.PixeLED technology is a MicroLED display technology, which can be applied for high performance displays with very high resolution, high contrast ratio, high aperture ratio, fast response, and very low power consumption. Dr. Li received his Ph.D. degree from Rensselaer Polytechnic Institute (USA) with Prof. Fred Schubert in 2003. Dr. Li's Ph.D. work focused on gallium nitride (GaN) light-emitting devices and solid state lighting applications.


Keynote Addresses

Keynote Addresses



Keynote III 16:40~17:10

Front of Screen Innovation Driving Consumer Experience

Stefan Peana

(Technologist, Dell, USA)

<Abstract>

In 1984, Dell launched the first computer to market using the innovative, and highly successful, built-to-order approach and direct distribution model. The products and technologies at Dell have since advanced, but the innovative culture remains at the core of the display business. As Display Front of Screen (FOS) performance and design continues to be a users’ only interface to content creation, consumption and entertainment, we must embrace the importance of customer-led innovation to drive better consumer experiences.wehighlights the evolution of computing and the importance of Display through immersive communication, collaborative engagement, and intelligent information processing. Better understand current and future trends in computing products, discuss prioritization of critical display focus areas based on anticipated innovation and collaborate with Dell’s product leadership on the future of display!

<Biography>

Stefan Peana, Chief Display Technologist at Dell, leads the display strategy, emerging technologies applications and overall technology roadmap across the Client Business. Working at Dell for 16 years, and in the display industry for over 30 years, Stefan has extensive knowledge and experience pioneering and implementing displays for both communication and computing products. Stefan currently represents Dell on the UHD Alliance, VESA HDR and VESA Standard committees and most recently has focused on: flexible display and product form factor, display color and front of screen performance enhancements, and HDR eco-system development.


Keynote Addresses

Keynote Addresses



Keynote IV 17:10~17:40

Evolution of Surface Computing

Steven Bathiche

(CVP, Microsoft Corp., USA)

<Abstract>

Machines cannot fulfill people’s fundamental biological need of interacting with other people. Simply put people cannot truly love machines or replace human interaction with those machines. The future of computing is to make machines smart and immersive enough that they no longer are the focus of interaction. Instead, they disappear, and allow people who are physically distant from each other to feel like they are literally in the same room. The computer’s role will be to create as real of an experience as possible while giving people the tools to digitally enhance and augment their interaction. In this talk, I will talk about the history of Surface, its role at Microsoft, and its potential future for redefining the way we compute, communicate, and entertain ourselves.

<Biography>

Steven has been at the forefront of combining new interaction and display technologies. For 3D input, he invented one of the first consumer input devices that used inertial sensors for gesture control, Sidewinder Freestyle Pro. In 2002 he invented the Microsoft Surface Table, one of the first augmented-reality multi-person devices to use multi-touch and object recognition and coined the term Surface Computing. As a follow-on, he was one of the inventors of PixelSense technology—which embeds flat cameras into the display matrix—and Surface Table 2.0, the world’s first computer-vision-based large flat-panel computer. These innovations seeded several technologies and led to the formation of the current family of Microsoft Surface computers, where he also leads the design of the Surface displays and sensing technologies. He now leads product innovation and applied research for all Microsoft Hardware. He holds over 110 patents, was name Microsoft Technical Fellow in 2017—one of just twenty individuals conferred that honor—and, is also an Society for Information Display fellow.


Tutorials & Workshops

Tutorials

10:00~17:30, August 28 (Tue.), 2018 / 2F, Room A (#211~213)

Chair: Prof. Seung-Woo Lee (Kyung Hee Univ., Korea)

Session No. Time Presentation Title

TutorialsI

T1 10:00~11:30

Quantum Dot Materials and Devices for Display and BeyondProf. Yajie Dong (Univ. of Central Florida, USA)

T2 11:30~13:00Fundamentals of OLEDsProf. Min Chul Suh (Kyung Hee Univ., Korea)

TutorialsII

T3 14:30~16:00

Virtual, Augmented, and Mixed Reality Technologies: Requirements, Status, and OutlookDr. Achin Bhowmik (Starkey Hearing Technologies, USA)

T4 16:00~17:30Introduction to Micro-LEDs Prof. Zhaojun Liu (Southern Univ. of Science and Tech., China)

※ T3 Session will be run through video lecture.

Workshops

10:00~17:30, August 28 (Tue.), 2018 / 2F, Room B (#214~216)

Chair: Prof. Yong-Young Noh (Dongguk Univ., Korea)

Session No. Time Presentation Title

WorkshopsI

W1 10:00~11:30Display++: New User Interfaces Enabled by AMOLED Frontplane IntegrationDr. Pawel E. Malinowski (IMEC, Belgium)

W2 11:30~13:00

Fundamentals of Flexible and Stretchable ElectronicsProf. Jianfeng Zang (Huazhong Univ. of Science and Tech., China)

WorkshopsII

W3 14:30~16:00

How could perovskite LEDs challenge organic LEDs?Prof. Jianpu Wang (Nanjing Tech Univ., China)

W4 16:00~17:30New Technologies for Colouring in DisplaysDr. Armin Wedel (Fraunhofer Inst. for Applied Polymer Research, Germany)

Tutorials & Workshops


A (Room 211~213)

1 OLED Fundamentals

Date: Aug. 29 (Wed.), 2018Time: 09:00~10:35Session Chairs: Dr. Akiyoshi Mikami (KIT, Japan)

Dr. Jang Jin Yoo (LG Display Co., Ltd., Korea)

A1-1 09:00~09:25

Experimental and Kinetic Monte Carlo Simulation Studies of Excitonic Processes in Phosphorescent and TADF-Type OLEDs

R. Coehoorn, A. Ligthart, X. de Vries, P.A. Bobbert, S. Gottardi, S.L.M. van Mensfoort, and H. van Eersel (Eindhoven Univ. of Tech., The Netherlands)

In this talk, we demonstrate how kinetic Monte Carlo (KMC) simulations can be used to successfully analyze and predictively model the internal quantum efficiency (IQE) of phosphorescent and TADF-based OLEDs and its roll-off at large current densities. We first discuss the results of theoretical and experimental studies of charge transport and excitonic processes in disordered organic semiconductors, including phosphorescent host-guest systems. Secondly, we demonstrate how KMC simulations can be used to successfully analyze and predictively model the IQE of Thermally Activated Delayed Fluorescence (TADF, 3rd generation)-based OLEDs, and their IQE roll-off at large current densities. Finally, we present simulation results for 3.5th-generation OLEDs that consist of a mixture of a TADF dye, 4CzIPN-Me, and a fluorescent dye, TBRb, in mCBP as the host material. The simulations reveal the cause of the roll-off and show how in 3.5th generation OLEDs an optimal fluorescent dye concentration can be obtained.

A1-2 09:25~09:50

Effects of Interface Structures on Thermal Stability of OLED Films

Daisuke Yokoyama, Ukyo Shiomoto, and Yoshiya Sakai (Yamagata Univ., Japan)

To ensure the high stability of OLED displays and lighting in a high-temperature environment, the understanding of thermal stability of OLED films and devices are required. However, it has been difficult to trace the change of multilayer samples under heating processes in detail because of the difficulty to determine the temperature of phase transition of very thin films inside the multilayer structures. In this presentation, we will show how to address this problem and demonstrate the significant effects of interface structures on thermal stability of OLED films. We will clearly demonstrate that thermal stability of an OLED film is significantly affected by structures at the top and bottom interfaces of the film and depends on materials at the interfaces. Our results show that the intermolecular interaction and microscopic structure at the interfaces are important to understand the thermal stability of films in OLED multilayer structures.


A (Room 211~213)

1 OLED Fundamentals



A1-3 09:50~10:05

Highly Efficient, Conventional Fluorescent OLEDs with Long Operational Lifetime by Utilizing Spin-Mixing Process with Induced Heavy Atom Effect

Hyun-Gu Kim, Kwon-Hyeon Kim, Chang-Ki Moon, and Jang-Joo Kim (Seoul Nat'l Univ., Korea)

Harvesting triplet excited states in light emitting process has been an important issue for efficient OLEDs. Heavy metal complexes, TADF materials and exciplexes resulted in efficient OLEDs, but device stability has been issued because of a slow decay process due to spin-mixing process in the emitters. In this work, we demonstrate a method to utilize both sensitization and induced heavy atom effects to harvest triplet excited states for efficient fluorescent OLED. We report highly efficient fluorescent OLEDs with the maximum EQE exceeding25.0% and extended operational lifetime by using exciplex co-host and iridium(Ir) complex sensitizer. Energy transfer processes reduce the lifetime of the exciplex and excitons on the sensitizer and enable an excited state to exist in a conventional fluorescent emitter, thereby increasing device lifetime. In addition, we fabricate efficient blue fluorescent OLED based on Ir complex sensitizer. Efficient spin-mixing process in the Ir complex without quenching to the host triplet resulted inefficient Fӧrster energy transfer, and the fluorescent OLED showed EQE of nearly 18%.

A1-4 10:05~10:20

Study on the New Device Structure for Two Terminal AC-OLEDs

So-Ra Park, Hyoungsik Nam, and Min Chul Suh (Kyung Hee Univ., Korea)

The organic light emitting diodes (OLEDs) have received considerable attention due to their abundant advantages as information displays and solid state lightings. Hence there have been lots of researchers to improve a device efficiency and internal efficiency was already reached up to 100%. However, there have been lots of issues associated with the operational lifetime. The main reason of short lifetime is known to be dissociation of a chemical bond at a certain interface between some organic materials by the accumulated excess charge carriers. To alleviate such degradation originated from the interfacial charge accumulation, we designed a new OLED structure composed of two vertically stacked EMLs. Especially, we designed to operate only one EML layer according to the direction of the current flow without using any additional intermediate electrode, as shown in Fig. 1. (forward bias: EML 2/ reverse bias: EML 1) From this approach, we believe that we could solve the short lifetime issues originated from a charge accumulation at an organic interface.


A (Room 211~213)

1 OLED Fundamentals



A1-5 10:20~10:35

Mechanism of Exciplex Diffusion in Organic Films

Hwang-Beom Kim and Jang-Joo Kim (Seoul Nat'l Univ., Korea)

An exciplex plays crucial roles in organic optoelectronic devices such as OPVs and OLEDs as a precursor before charge separation and a triplet harvester, respectively. Exploiting its triplet harvesting ability, its application in OLEDs as a host for conventional fluorescent dyes and light emitter are actively researching. However, exciplex diffusion in films has not been studied much because the energy transfer between exciplexes is considered to be improbable due to the apparent lack of optical absorption for an exciplex state. Recently, however, it was reported that exciplex diffusion takes place via inchworm mechanism instead of energy transfer. In this presentation, we report absorption band for intermolecular charge-transfer (CT) state emitting exciplex luminescence. Based on bilayer and concentration-dependent quenching experiments, we concluded that exciplex could diffuse by energy transfer. The energy transfer rate constant decreases exponentially with the distance. The absorption band for intermolecular CT state and exponential drop of energy transfer rate constant with separation indicate that this energy transfer occurs by the exchange mechanism.


B (Room 214~216)

2 QD-based Electroluminescence

Date: Aug. 29 (Wed.), 2018Time: 09:00~10:20Session Chairs: Prof. Wan Ki Bae (Sungkyunkwan Univ., Korea)

Prof. Heesun Yang (Hongik Univ., Korea)

B2-1 09:00~09:25

Efficient Quantum Dot Light-Emitting Diodes with Tandem Structure

Heng Zhang, Qiang Su, and Shuming Chen (Southern Univ. of Science and Tech., China)

Efficient tandem quantum-dot LEDs (QLEDs) are developed by using an inter-connecting layer (ICL) with the structure of ZnMgO/Al/HATCN/MoO3. With the proposed ICL, full color (red/green/blue/white, R/G/B/W) tandem QLEDs are demonstrated with extremely high current efficiency (CE) and external quantum efficiency (EQE): 17.9 cd/A and 21.4% for B-QLEDs, 121.5 cd/A and 27.6% for G-QLEDs, 41.5 cd/A and 23.1% for R-QLEDs, 55.06 cd/A and 23.88% for W-QLEDs, which, to the best of our knowledge, are the highest values ever reported. The demonstrated R/G/B/W tandem QLEDs, with extremely high efficiency, long operational lifetime, low efficiency roll-off and high color purity, would be ideal candidates to bring QLEDs into the next generation full-color displays and the solid-state lighting market.

B2-2 09:25~09:50

Ideal Nanocrystal Quantum Dots for Active-Matrix Light- Emitting Diodes

Zhaohan Li, Ruili Wu, Huaibin Shen, and Lin Song Li (Henan Univ., China)

Semiconductor nanocrystal core/shell quantum dots (QDs) have successfully extended their original fundamental research into many practical applications. But core/shell QDs may still not satisfying enough in the practical applications because of the existence of photoblinking, multi-exponential PL decay behavior, and F?rster resonance energy transfer (FRET) between QDs. Herein, we report an approach to synthesize a series of alloyed core/shell QDs by a low temperature injection and high temperature growth precisely controlled method. By probing shell-thickness dependent performance, ZnCdSe-based core/shell QDs not only with nonblinking, but also single photoluminescence decay channel and suppressed FRET have been successfully prepared. All these superb characteristics can be beneficial to high quality QD-based active-matrix lighting-emitting diodes. The highest external quantum efficiency of ~17% was obtained by applying such ideal ZnCdSe-based core/shell QDs.


B (Room 214~216)

2 QD-based Electroluminescence

Date: Aug. 29 (Wed.), 2018Time: 09:00~10:20 Session Chairs: Prof. Wan Ki Bae (Sungkyunkwan Univ., Korea)

Prof. Heesun Yang (Hongik Univ., Korea)

B2-3 09:50~10:05

Droop-Free Operation of Quantum Dot Light Emitting Diodes up to 100,000 nit

Jaehoon Lim, Young-Shin Park, Kaifeng Wu, Hyeong Jin Yun, and Victor I. Klimov (Los Alamos Nat'l Lab., USA)

We suggest a novel design strategy of core/shell quantum dots (QDs) to cope with the efficiency droop of QD-based light emitting diodes (QLEDs). We partitioned the internal region of QDs to two functional regions; first, we introduce a specially shaped carrier injection barrier to outer shell region to balance charge injection, which prevents the formation of charged excitons that trigger the efficiency droop in QLEDs. Second, we combine the smoothened confinement potential at the core-shell interface to suppress Auger recombination of charged excitons. These newly developed QDs exhibit exceptionally high quantum yields for both neutral and charged excitons, which is a key property to maintain high emissivity of a QD emission layer at high currents. Surprisingly, these engineered QDs completely eliminates the efficiency droop up to brightnesses of ~100,000 nit in QLEDs and suggests their potential suitability for high optical power applications such as projectors, daylight displays, and outdoor lightings.

B2-4 10:05~10:20

Enhanced Performance of Inverted Quantum Dot Light-Emitting Diodes by Passivating Defects of ZnO

Suhyeon Lee, Ahyoung Hong, Byung Jun Jung, and Jeonghun Kwak (The Univ. of Seoul, Korea)

As a future display device, quantum dot light-emitting diodes (QLEDs) have attracted attention due to their narrow spectral emission bandwidth, color tunability, and easy fabrication through solution process. In spite of these advantages, poor balance between electron-hole charge carriers results in low device efficiency, lifetime, and drastic efficiency roll-off. In this work, we report an inverted QLED adopting ethylenediaminetetraacetic acid (EDTA)-ZnO as an electron transport layer (ETL). The EDTA added on the sol-gel ZnO synthesis process effectively passivated the defects of ZnO as reported, leading to improved performances by approximately 30% in current efficiency. It is noticeable that the QLEDs using the EDTA-ETL showed much lower leakage current by a factor of 10 below the turn-on voltage region, which is attributed to the diminished defect states by EDTA filling the oxygen vacancies in ZnO. We believe this EDTA-ZnO ETL is a simple and effective approach to improve the performance of QLEDs.


C (Room 217)

3 Touch and Interactive Displays I

Date: Aug. 29 (Wed.), 2018Time: 09:00~10:15Session Chair: Prof. Do Hwan Kim (Hanyang Univ., Korea)

C3-1 09:00~09:25

Large Deformation in Soft Material Enables New Photonic and Phononic Properties

Jianfeng Zang (Huazhong Univ. of Science and Tech., China)

Soft materials, including biological tissues, muscles, gels, and elastomers, have attracted significant attention due to their unprecedented properties on reversible and large deformation subjected to external stimuli. Together with specifically designed structures and functional components, soft material enables many new functions and properties otherwise impossible in rigid materials system. Here we demonstrate some striking examples using soft materials to generate some new functions ranging from photonics to phononics and acoustics.

C3-2 09:25~09:50

Smart Healthcare Sensing System Powered by Human Motions

Yun-Ting Jao, Po-Kang Yang, Che-Min Chiu, Yu-Jhen Lin, Shuo-Wen Chen, and Zong-Hong Lin (Nat'l Tsing Hua Univ., Taiwan)

Functional textiles have evoked great attention due to their promising applications in next-generation wearable and biomedical electronics. However, the constraints on the harsh operation environment and ineffective response to instantly reflect the physical status remain critical challenges. Herein, we develop a chitosan-based triboelectric nanogenerator (C-TENG) to harvest biomechanical energy from human motions, in which a nanostructured chitosan-glycerol film is utilized to promote the commercial textile into a multi-functional textile based on its transparency, flexibility, biocompatibility and adaptability to commercial fabrics. The output characteristics of the as-fabricated C-TENG are notably stable under various humidity conditions, distinguishing them from conventional TENGs. Moreover, the C-TENG can be further developed into various kinds of self-powered healthcare sensors for glucose, lactate, humidity, sweat, and gait phase detection. This work presents a new step in applying multi-functional textiles to wearable energy harvesters and self-powered sensors, which have high potential for future smart clothing products and personalized healthcare sensors.


C (Room 217)

3 Touch and Interactive Displays I

Date: Aug. 29 (Wed.), 2018Time: 09:00~10:15Session Chair: Prof. Do Hwan Kim (Hanyang Univ., Korea)

C3-3 09:50~10:15

Ultraflexible Organic Differential Amplifier for Biosignal Monitoring Systems

Takafumi Uemura and Tsuyoshi Sekitani (Osaka Univ., Japan)

In this study, we have developed a noise reduction technique utilizing an ultraflexible and bio-conformable organic differential amplification circuit, which has a capability of amplifying differential input signal while suppressing common-mode noise. The organic circuit was fabricated on an ultraflexible 1-μ thick parylene foil with p-channel OTFTs and thin-film capacitors, and therefore, showing highly mechanical flexibility to attach onto a soft human skin surface. To demonstrate the potential of improving signal integrity for biosignal monitoring, we have recorded human electrocardiogram (ECG) signal. As a result, the input signal to noise ratio of -1.7 dB was improved to 20.6 dB utilizing the differential amplification circuit.


D (Room 218)

4 2D Materials

Date: Aug. 29 (Wed.), 2018Time: 09:00~09:55Session Chairs: Dr. Jaehyun Moon (ETRI, Korea)

Prof. Sung-Yool Choi (KAIST, Korea)

D4-1 09:00~09:25

Atomic Engineering of Wafer-Scale 2D Semiconductors

Kibum Kang (KAIST, Korea)

High-performance semiconducting films with precisely engineered thicknesses and compositions are essential for developing next generation electronic devices, which are becoming more integrated, complex, and multifunctional. My talk will introduce the novel processes that enable atomic-scale control of the thickness and spatial composition of semiconducting films on the wafer-scale. These processes include: (i) the wafer-scale generation of monolayer van der Waals semiconductors such as transition metal dichalcogenides (TMDs) via metal-organic chemical vapor deposition (MOCVD), 1,2 (ii) the atomic-level engineering of vertical thickness and composition through the layer-by-layer assembly of TMD monolayers, 3 and (iii) the transfer of atomically engineered films, using their van der Waals nature, onto arbitrary substrates.3 These capabilities provide a new material platform for both fundamental research and practical applications, including incorporation into existing integrated circuit technology to form hybrid materials (i.e. TMD/CMOS) and boost electrical and optical functionality.

D4-2 09:25~09:40

Enhanced Stability of Solution Processed In GaZnO Thin-Film Transistor with Parylene Passivation for OLED Display

Pengyu Sun, Bowen Zhu, Le Cai, Guangwei Xu (Univ. of California, USA), Suhui Lee, Jin Jang (Kyung Hee Univ., Korea), and Yang Yang (Univ. of California, USA)

InGaZnO (IGZO) thin-film transistor (TFT) is fabricated with solution process and passivated with parylene coating. The as fabricated devices show significant stability improvement with Von shift of 0.5 V under 10000s positive bias stress (PBS) and maintain good performance. The IGZO TFT demonstrates ability of driving OLED by integration in a 5 cm x 5 cm, 144-pixel passive matrix OLED (PMOLED) display.


D (Room 218)

4 2D Materials

Date: Aug. 29 (Wed.), 2018Time: 09:00~09:55Session Chairs: Dr. Jaehyun Moon (ETRI, Korea)

Prof. Sung-Yool Choi (KAIST, Korea)

D4-3 09:40~09:55

Flexible Graphene OLED

Jaehyun Moon, Jin-Wook Shin, Hyunsu Cho, Jong-Heon Yang, Jun-Han Han, Byoung-Hwa Kwon, Chun-Won Byun, Kang Me Lee, Nam Sung Cho, and Jeong-Ik Lee (ETRI, Korea)

Using a display compatible process graphene film was directly patterned into a pixel array on a polyimide (PI) film. Sequentially, two color OLED and a thin-film encapsulation layer were formed to realize a fully operational OLED under bending condition. In this talk, we elaborate integration and processing topics which are of high importance to achieve flexible OLEDs on commercially meaningful substrate size. In this course, we emphasize the technical feasibility of ultra-thin encapsulation, clean and accurate patterning of graphene film and usefullness of laser lift-off process. Since its successful isolation from the growth substrate, graphene has been suggested as a crucial component for flexible optoelectronics. However, due to the processing hurdles, graphene containing large area flexible device has not been substantiated. Our results is a milestone toward flexible devices, in which the uniqueness of graphene bears an indispensable role.


E (Room 311~312)

5 Near-Eye Display for AR/VR/MR

Date: Aug. 29 (Wed.), 2018Time: 09:00~10:20Session Chair: Prof. Jae-Hyeung Park (Inha Univ., Korea)

E5-1 09:00~09:25

Advanced OLED Microdisplays for Virtual- and Augmented- Reality Applications

Uwe Vogel, Philipp Wartenberg, Bernd Richter, Stephan Brenner, Karsten Fehse, and Matthias Schober (Fraunhofer FEP, Germany)

Demands for high information density in smart glasses, and realistic immersion in virtual-reality, require a leap in microdisplay technology for size, resolution, refresh rate, and low-power consumption. This presentation is to report on recent advances in application-specific OLED microdisplays for virtual- and augmented-reality (VR, AR). Therefore we cover 2300 ppi 1" 120 Hz WUXGA OLED microdisplay developed within the frame of the European-funded research project "LOMID" (www.lomid.eu) dedicated to VR applications, as well as <0.2" ultra-low power OLED microdisplay solutions for mobile AR.

E5-2 09:25~09:50

OLED Micro-Displays for Virtual Reality (VR) & Augmented Reality (AR)

Amalkumar Ghosh, Ilyas Khayrullin, Qi Wang, Evan Donoghue, Tariq Ali, Ihor Wacyk, Kerry Tice, Fridrich Vazan, Olivier Prache, and Laurie Sziklas (eMagin Corp., USA)

Virtual reality (VR) and augmented reality (AR) wearables require displays with high luminance and high resolution. OLED microdisplays are capable of generating high quality images that meet many of the requirements of VR/AR applications; however, the maximum luminance of conventional full color OLED microdisplays remains below the 2,000 cd/m2 minimum threshold requirement of VR/AR. Hence the need to develop high brightness OLED microdisplays. This paper presents results of generating high brightness OLED microdisplay using direct patterning technology. This was achieved by eliminating the color filters in a conventional white OLED emitter and also by introducing phosphorescent materials in a side-by-side RGB pattern. Maximum luminance obtained in 2Kx2K display using direct patterning is more than 5,000 cd/m2 with 12.5% pixels on. More recently maximum luminance of more than 7,500 cd/m2 with 20% pixels on was achieved in a WUXGA display (1920x1200 pixels) using direct patterning. Color gamut achieved was about 100% DCI-P3 and 133% sRGB with slight brightness loss. Performance of these displays will be presented.


E (Room 311~312)

5 Near-Eye Display for AR/VR/MR

Date: Aug. 29 (Wed.), 2018Time: 09:00~10:20Session Chair: Prof. Jae-Hyeung Park (Inha Univ., Korea)

E5-3 09:50~10:05

Video Upscaling on a Panel for High Resolution Microdisplay Systems

Sung-Wook Eo, Wook Hong, Ho Kwon Kim, and Joon Goo Lee (RAONTECH Inc., Korea)

In most microdisplay systems, the scaler function is performed in a microdisplay controller. However, this manner requires higher data bandwidth because the total amount of data to be transferred from the controller to the panel should be increased. To solve this problem, we propose a design methodology that the scaling function is performed on panel side rather than on the controller. Since the amount of data transmitted via the interface between the controller and the panel does not increase, it is no longer necessary to consider multitude limitations of the interface to increase the bandwidth. The liquid crystal on silicon (LCoS) based microdisplay panel with HD to QHD scaler and FHD to QHD scaler has designed and fabricated using 110nm process. We have verified designed scalers with a QHD resolution LCoS microdisplay panel system. Performance degradation due to our scaling algorithm is unnoticeable.

E5-4 10:05~10:20

Multi Focal Head Mounted Display Using Polarization Directed Flat Lens

Hoyoung Jung, Nari Kim, Sehoon Kim, and Wonhee Choe (Samsung Electronics Co., Ltd., Korea)

A Single focal plane AR glasses has VAC problem. To solve this problem, we propose a multi focal plane structure using PDFL (Polarization Directed Flat Lens) which has the special property that create a different focal length dependent on circular polarization state. With right handed circularly polarized light, the lenses will produce one focal length, while left handed circularly polarized light will present a focal length with the opposite sign. Plane A and B have different circular polarization directions. Plane A has the effect of getting close the focal distance due to the negative focal length when passing through PDFL, and Plane B has the opposite effect. In this way, the distance between the planes is first compressed using the PDFL, and the distance between the final planes seen by the user is also compressed.


F (Room 313)

6 Advanced LED Fabrications

Date: Aug. 29 (Wed.), 2018Time: 09:00~10:30Session Chair: Prof. Ray-Hua Horng (Nat'l Chiao Tung Univ., Taiwan)

F6-1 09:00~09:25

Impact of Plasma Electron on Plasma Damage-Free Sputtering of Tin-Doped Indium Oxide Contact Layer on p-GaN for InGaN/GaN LEDs

Joon Seop Kwak (Sunchon Nat'l Univ., Korea)

We systematically studied the origin of plasma-induced damage on a p-type wide-band-gap layer during the sputtering of ITO contact layers by using RF-superimposed DC sputtering and its effects on the forward voltage and light output power (LOP) of LEDs with sputtered ITO transparent conductive electrodes (TCE). Changing the DC power voltage from negative to positive bias reduces the forward voltages and enhances the LOP of the LEDs. The positive DC power drastically decreases the electron flux in the plasma obtained by plasma diagnostics using a cutoff probe and a Langumir probe, suggesting that the repulsion of plasma electrons from the p-GaN surface can reduce plasma-induced damage to the p-GaN. The plasma electrons can increase the effective barrier height at the ITO/deep-level defect (DLD) band of p-GaN by compensating DLDs, resulting in the deterioration of the forward voltage and LOP. Finally, the plasma damage-free sputtered-ITO TCE enhances the LOP of the LEDs by 20% with a low forward voltage of 2.9 V at 20 mA.

F6-2 09:25~09:50

GaN Monolithic Integration for Lighting and Displays

Hoi Wai Choi (The Univ. of Hong Kong, Hong Kong)

Single wavelength transmission is typically expected from monolithic systems, given that the emission wavelengths of the QWs are not tunable. However, the highly-strained nature of the InGaN/GaN wells due to lattice and thermal mismatch, especially for those of longer emission wavelengths, offer a viable way of wavelength tuning. Through dimensional downsizing of the emitters, the emission wavelengths are blue-shifted due to the strain-relaxation effect. Blue-shifts of as much as 80 nm has been observed from nanostructured emitters of less than 100 nm in dimensions, turning green-light emitters into blue-light emitters, enabling multi-wavelength emission from a single wafer in a controllable fashion. Besides wavelength blue-shifting by strain relaxation, it is also possible to induce strain into the MQWs by nano-structuring to produce wavelength red-shifting.


F (Room 313)

6 Advanced LED Fabrications

Date: Aug. 29 (Wed.), 2018Time: 09:00~10:30Session Chair: Prof. Ray-Hua Horng (Nat'l Chiao Tung Univ., Taiwan)

F6-3 09:50~10:15

Novel Epitaxial Growth Methods for Nitride Materials by Using Plasma Technology

O. Oda, F. W. Amalraj, N. Shimizu H. Kondo, M. Sekine, Y. Tsutumi, K. Ishikawa, (Nagoya Univ., Japan) H. Kano (NURei Co., Ltd., Japan), N. Ikarashi, H. Amano, and M. Hori (Nagoya Univ., Japan)

We have developed novel crystal growth methods for nitride semiconductors by using plasma technology based on our long term experiences. One is HDRS (high density radical source) which is based on ICP and CCP (capacitance coupled plasma) in order to increase the density of atomic nitrogen radicals. By using this HDRS, it was proved that high quality GaN and InGaN epitaxial layers can be grown with higher growth rate than conventional radical sources. Another is REMOCVD (radical enhanced MOCVD) method, in which nitrogen and hydrogen gas are plasma treated and nitrides can be grown by the reaction between radicals and MO gas. In fact, it was proved that GaN, AlN and AlInN can be grown with high crystal quality at lower temperatures than those for MOCVD. High quality InN can be grown even at a temperature as low as 200 ɦnbsp;

F6-4 10:15~10:30

Thermally Stable Color Converter Using Ce3+-Doped Y3Al5O12 Phosphor for High Power Light Source

Yong Ha Choi, Ji Wook Moon, and Jihyun Kim (Korea Univ., Korea)

Color conversion materials such as phosphors have been used as a material for implementing white light in the field of solid state lighting. Because it converts light from a light source into light of longer wavelength. In this study, we fabricated polycrystalline ceramic using Ce3+-doped Y3Al5O12 (YAG) phosphor for the color conversion materials with high thermal stability. YAG phosphor absorbs blue light well and emits yellow light having broad spectrum, so that white light of good quality can be implemented. The fabrication of this color converter is in four steps: (1) Synthesis of precursor, (2) Pressing, (3) Sintering, (4) Polishing and dicing. Optical property of fabricated sample was measured using an integrating sphere and blue LD (445 nm). We will report on the research of the optical and thermal properties of color converters and how to improve them.


G (Room 314~315)

7 Organic Transistors I

Date: Aug. 29 (Wed.), 2018Time: 09:00~10:05Session Chair: Prof. Jiyoul Lee (Pukyong Nat'l Univ., Korea)

G7-1 09:00~09:25

Solution-Processed Organic Crystals for Transistor Applications

Yun Li (Nanjing Univ., China)

We devoted our efforts in patterning technology for solution-processed organic crystals and their transistor applications. Our spin-coating technique from mixture solutions is a promising method to efficiently produce large organic semiconducting crystals on various substrates for transistor arrays. This solution-based process also has other excellent advantages, such as phase separation for self-assembled interfaces via one-step spin-coating, self-flattening of rough interfaces, and in-situ purification that eliminates the impurity influences. Recently, we are also interested in 2D organic materials. We successfully fabricated 2D molecular crystalline semiconductors with precise layer definition using a floating-coffee-ring-driven assembly. Transistors yielded a high carrier mobility of 13.0 cm2/Vs. Besides, we demonstrated a simple and efficient approach to directly write 2D organic crystals using a rollerball pen. Furthermore, using our 2D molecular crystals, we achieved low-voltage FETs with the carrier mobility up to 9.8 cm2/Vs and high-speed ferroelectric OFET memory devices. Therefore, our results can help improve solution-coated 2D molecular crystals in low-cost, large-area, and high-performance electronic applications.

G7-2 09:25~09:50

Organic Anti-Ambipolar Field-Effect Transistor for Flexible Logic Circuits

Yutaka Wakayama (NIMS, Japan)

The main purpose of this study is to develop a novel organic field-effect transistor, in which a sharp increase and decrease in drain current is induced by gate bias voltage.This transistor is so-called “anti-ambipolar transistor”. Auniqueness of the device configuration can be ascribed to a partially overlapped p-n heterojunction at the center of a transistor channel. The observed non-linear carrier transport is analogous to that of a negative differential resistance and, therefore, this device has potential for multi-level logic circuits. By connecting this device with typical n-type channel, we achieved a ternary convertor (0, 1/2, 1) operation. Specific emphasize is put on such novelty of the device operation, which can overcome the limit of large-scale integration in conventional binary CMOS converter to open up a new field of the flexible organic logic circuits.


G (Room 314~315)

7 Organic Transistors I

Date: Aug. 29 (Wed.), 2018Time: 09:00~10:05Session Chair: Prof. Jiyoul Lee (Pukyong Nat'l Univ., Korea)

G7-3 09:50~10:05

Drain Current Model for Coplanar Organic-Field Effect Transistors with Power-Law Mobility and Contact Resistance

Yong Jeong Lee (Ecole Polytechnique, France), Sung Yeop Jung, Sung June Jung (POSTECH, Korea), Gilles Horowitz, and Yvan Bonnassieux (Ecole Polytechnique, France)

We develop a physically-based drain current model for coplanar organic field-effect transistors in the above-threshold regime considering gate voltage dependent mobility and contact resistance by power-law. In this study, first, we observed that the contact resistance in a coplanar transistor exhibits a power-law behavior by 2-D numerical simulation. Then, we propose a novel drain current model with incorporating the power-law contact resistance model. A set of experimental data from coplanar will also be presented. Second, we examine the applicability of the power-law model for a transistor with a greater energetic disorder in organic semiconductor behaving as a degenerate semiconductor. By conducting a series of numerical simulation at various width of the Gaussian density of states, i.e. σ sp;= 0.05, 0.10 and 0.15 eV, we demonstrate a single value of power-law exponent is sufficient to describe the gate-voltage dependent mobility at each Gaussian density of states width condition for a practical range of gate voltage. This infers that the power-law model is valid for both non-degenerate and degenerate semiconductor.


H (Room 316~317)

8 Novel Materials for Stretchable/Deformable Electronics

Date: Aug. 29 (Wed.), 2018Time: 09:00~10:05Session Chair: Prof. Zijian Zheng (The Hong Kong Polytechnic Univ., China)

H8-1 09:00~09:25

Stretchable Conductors for Human-Machine Interface

Pooi See Lee (Nanyang Technological Univ., Singapore)

The emergence of deformable devices is driven by the need of free-form properties for conformable and adaptable applications. We have prepared liquid metal based multiphase composites for superelastic electronic conductors and successfully fabricated highly stretchable and printable touch sensors for human-machine interface. The superelastic conductor contains electrically conductive fillers that enhanced the stretchability and durability, giving a 1000% strain at initial conductivity of 8331 Scm-1 and eight times resistance change after reversibly stretched to 800% strain for 10,000 times. On the other hand, stretchable ionic conductors have been used as current collectors and electrolytes in soft electronic or energy devices. We demonstrate the preparation of a stretchable touch interface using the stretchable, transparent and printable ionic conductors. The touch sensing performance as a function of stretching will be discussed. The stretchable ionic conductors can also be used to prepare stretchable energy harvestors that respond to mechanical contact forces and convert them into electricity.

H8-2 09:25~09:50

Deformable Single Crystalline Metal Oxide Nanowires and Their Deformable Device Applications

Takeshi Yanagida (Kyushu Univ., Japan)

Self-assembled deformable one-dimensional Single Crystalline Nanowires have attracted much attention due to not only the fundamental interests in nanoscale-confided physical properties but also novel nano-device applications, where existing nanomaterials have not been applicable. Here I demonstrate i) a fundamental design concept for creating single crystalline oxide nanowires via vapor-liquid-solid (VLS) pathway, and ii) a development to measure the physical properties of a single nanowire, including electrical and thermal transport properties. We have constructed highly stable memristive device comprised of single nanowire. In addition, we have shown the intrinsic transport properties and applications of various oxide nanowires. We believe that the presented approaches by utilizing meal oxide nanowires offers an important platform for investigating not only nanoscale properties of transition metal oxides but also exploring novel nano-devices with other materials, which had not been possible to be integrated onto Si and/or deformable plastic substrate.


H (Room 316~317)

8 Novel Materials for Stretchable/Deformable Electronics

Date: Aug. 29 (Wed.), 2018Time: 09:00~10:05Session Chair: Prof. Zijian Zheng (The Hong Kong Polytechnic Univ., China)

H8-3 09:50~10:05

Multifunctional Light-Emitting Transistors Based on 2D Trarnsition Metal Dichalcogenides

Huije Ryu, Junyoung Kwon, and Gwan-Hyoung Lee (Yonsei Univ., Korea)

Here we demonstrate a tunneling device based on monolayer WSe−2, which has a potential as a multifunctional light-emitting transistors. In our graphene/hBN/WSe2/BN/graphene heterostructure devices, electrons and holes were injected into monolayer WSe2 from two graphene electrodes. Due to a long lifetime of the excitons in WSe2 sandwiched by hBN, excitons emit a light through recombination of electrons and holes. In addition to that structure, we contacted another graphene directly on WSe2 −to come out additional device functions. Our device showed a tunneling Ids-Vds curve, which is a typical signature for direct tunneling transport mechanism. Electroluminescence (EL) and photoluminescence (PL) can be modulated by a gate bias (Vgs) and direct carrier injection contact bias (Vis) due to tunability of charge carriers. Our work shows a high potential of van der Waals tunneling device for multifunctional light emitting applications.


A (Room 211~213)

9 OLED Display & Device Engineering

Date: Aug. 29 (Wed.), 2018Time: 10:50~12:30Session Chair: Dr. Nam Sung Cho (ETRI, Korea)

A9-1 10:50~11:15

High Dynamic Range Performance of OLED TVs

Jang Jin Yoo, Sungjin Kim, Yongmin Park, Dongwoo Kang, Jongjin Park, Jonguk Bae, and Sooyoung Yoon (LG Display Co., Ltd., Korea)

High Dynamic Range (HDR) content standards such as HDR10, Dolby Vision, HLG (Hybrid Log Gamma) have been presented over a last couple of years, and these standards commonly have both wider dynamic range and color gamut than that of the legacy content. However, it is practically hard to fully satisfy the HDR content standards with the current TV technologies. Although various standards for display metrology regarding HDR content standards have been released to evaluate the performance of HDR TVs, it has been controversial whether the performance obtained from measurements using test patterns is well consistent with the actual performance of HDR TVs from which viewers are expecting. For this reason, a series of tests were carried out to examine how the performance of HDR TVs varies in case measurements are made using actual HDR content instead of test patterns in terms of peak luminance and black level with two different types of premium HDR TVs, an Organic Light Emitting Diode (OLED) and a Liquid Crystal Display (LCD). In this paper, current status and development direction of HDR technology for TVs were discussed.

A9-2 11:15~11:40

Optical Design for High Efficiency and Wide-Color-Gamut in OLEDs with Multi-Cathode Structure

Akiyoshi Mikami (Kanazawa Inst. of Tech., Japan)

The emission efficiency becomes higher by using multi-cathode (MLC) structure consisting of a semi-transparent MgAg, optical buffer ITO layer and high reflection Ag, which is caused by the reduction of surface plasmon (SP) loss. Instead the waveguide mode increases due to the direct coupling of SP with the external micro-cavity in the MLC. These phenomena can be explained by considering two kinds of SP resonance of long range SP and short range SP, which interact with each other on both sides of very thin MgAg layer. Sharp emission band is another advantage in the MLC structure because of the enhancement of the external micro-cavity effect. The purity of three primary color can be rather improved.


A (Room 211~213)

9 OLED Display & Device Engineering

Date: Aug. 29 (Wed.), 2018Time: 10:50~12:30Session Chair: Dr. Nam Sung Cho (ETRI, Korea)

A9-3 11:40~12:05

Withdrawal

A9-4 12:05~12:30

New OLED Device for Automotive Display

Kwan-soo Kim, Kimin Lim, Byungsoo Kim, Eunjung Park, Hyun-chul Choi, and InByeong Kang (LG Display Co., Ltd., Korea)

Recently, OLEDs are adopted to a wide range of products including TV and mobile due to its excellence such as good picture quality and the flexible design. However, it is still required to improve the OLED lifetime under the operating environment of the display. Especially, automotive displays are required longer lifetime at high luminance and high temperature than the other products. These customers requirements could not be satisfied by conventional OLED devices. In this work, we have developed novel high efficiency and long lifetime RGB OLED device which is differentiated from the existing ones for the automotive display. Using this OLED device, we achieved about 1.5 times higher efficiency and 4 times longer lifetime compared to conventional RGB OLED devices for mobile (Fig. 1). Also we could meet the demand of automotive display with this new OLED device.


B (Room 214~216)

10 New & Emerging QD Technologies

Date: Aug. 29 (Wed.), 2018Time: 10:50~12:20Session Chairs: Prof. Jiwan Kim (Kyonggi Univ., Korea)

Prof. Jaehoon Lim (Ajou Univ., Korea)

B10-1 10:50~11:15

Light Emitting Devices Made of Graphene Quantum Dot with Controlled Oxidation

Seokwoo Jeon (KAIST, Korea)

Graphene quantum dots (GQDs) could be a new class of optical material with useful properties of tunable luminescence, low cost, and superior photo and chemical stability. Based on experimental evidences supported with calculations, our group have revealed that the isolated small sp2 carbon hexagons within a GQD, namely subdomain plays a key role on PL mechanism. With those understanding, the GQD light-emtting diodes (GQD-LEDs) with 1,000 cd/m2 has demonstrated for the first time. In addition, we have continued to explore various light emitting devices for GQDs. We prepared GQD embedded boron oxynitride (BNO) powder from mixture of GQD with boric acid and urea by simple microwave heating. The powdered GQD embedded BNO shows great applicability for AC powder EL device as an active material, with a luminance up to 283 cd/m2. Those demonstrations of GQD-based electroluminescent devices will open new prospect in the field of low cost, eco-friendly EL displays.

B10-2 11:15~11:40

Highly Transparent Optoelectronics Based on Quantum-Dots and Oxide Semiconductors

Seong Jun Kang (Kyung Hee Univ., Korea)

This talk will focus to introduce a new type of optoelectronics based on nanomaterials, such as quantum-dots and metal nanoparticles. These kinds of optoelectronics are considered as an emerging science and technology due to the potential applications including transparent and soft interactive devices. During the presentation, the interfacial physics of quantum-dots light emitting diodes (QLEDs) will be considered as well as the fabrication process of red, greed, and blue QLEDs. In addition, a method to fabricated transparent photosensors, which can be perfectly turned on and off by a visible light, based on quantum-dots and metal nanoparticles will be discussed in detail. The measurements and analysis of interfacial electronic structure of optoelectronics based on quantum-dots will be introduced in detail as well.


B (Room 214~216)

10 New & Emerging QD Technologies

Date: Aug. 29 (Wed.), 2018Time: 10:50~12:20 Session Chairs: Prof. Jiwan Kim (Kyonggi Univ., Korea)

Prof. Jaehoon Lim (Ajou Univ., Korea)

B10-3 11:40~12:05

New Technologies for Colouring in Displays

Armin Wedel, Yohan Kim, Benjamin Heyne, and André Geßner (Fraunhofer Inst. for Applied Polymer Research, Germany)

Colloidal quantum dots (QDs)-based light-emitting diodes (QLEDs) has been actively researched due to the potential impacts to the display and lighting industry base on the unique properties of QDs itself such as size-dependent bandgap tuneability, narrow emission spectrum, and low-cost solution-based processing. Here, we investigated the performance of conventional and inverted QLEDs fabricated with synthesized InP/ZnSe/ZnS QDs and ZnO NPs in terms of charge carrier balance. Since organic-inorganic hybrid structure has more possibility to get high efficiency, zinc oxide (ZnO) nanoparticle (NP) has a lot of attention as electron transport layer with the advantage of material stability, high electron mobility and easy preparation process. Green, yellow and red InP/ZnSe/ZnS QDs were sophisticatedly designed for application in QLEDs by optimizing different precursor, shell thickness, and organic surface ligands. Optimizing charge carrier balance and the recombination zone in the multilayered device structure is key for the development of highly efficient and stable InP-based QLEDs.

B10-4 12:05~12:20

The Landscape of Electroluminescent Quantum Dots Technology: Trends and Opportunities

Zine Bouhamri and Pars Mukish (Yole Développement, France)

With the increasing success of OLED and growing interest in QLED, emissive technologies have already proven their worth and enabled a variety of consumer products with stunning display performance. MicroLED is announced as the disruptive display technology for a variety of applications. But another potential disruptive display technology, continuation of the work for both QLED and OLED, is considered as the ultimate display technology and could be right around the corner: Electroluminescent Quantum Dots (EL-QDs). This presentation will provide an overview of EL-QD technology, focusing on our patent landscape analysis as shown on Fig. 1, to point out the key players, the technical choices and the specificities they focus on. Objective will also be to comparatively analyze some recently published efficiency and reliability results to underline opportunities such emerging technology could offer for equipment and material suppliers.


C (Room 217)

11 Touch and Interactive Displays II

Date: Aug. 29 (Wed.), 2018Time: 10:50~12:10Session Chair: Prof. Steve Park (KAIST, Korea)

C11-1 10:50~11:15

Morphological Control of Touch Surfaces Based on Soft Elastomer Actuators

Il-Kwon Oh (KAIST, Korea)

Electro-active soft actuators and bio-inspired artificial muscles have received burgeoning interest as essential components in future electronic devices such as soft haptic-feedback systems, human-friendly wearable electronics, and active biomedical devices. However, important challenging issues including fast response time, ultra-low input power, robust operation in harsh environments, high-resolution controllability and cost-effectiveness remain to be resolved for more practical applications. Here, we report an electro-ionic antagonistic artificial muscle based on hierarchically porous nitrogen-doped carbon (HPNC) electrodes derived from a microporous poly(triazine-triptycene) organic framework (PtztpOF). The HPNC, which exhibits hierarchically micro- and mesoporous structures, high specific capacitance of 330 F g-1 in aqueous solution, large specific surface area of 830.46 m2 g-1 and graphitic nitrogen doping, offers high electrical conductivity of 0.073 MS m-1 and outstanding volumetric capacitance of 10.4 MF m-3. Furthermore, we demonstrate that a novel electro-ionic antagonistic muscle based on HPNC electrodes successfully displays extremely reliable and large bending deformations and long-term durability under ultra-low input voltages.

C11-2 11:15~11:40

User-Interactive and Color-Tunable Electronic Skin

Ho-Hsiu Chou (Nat'l Tsing Hua Univ., Taiwan), Amanda Nguyen, Alex Chortos, John W.F. To, Chien Lu, Jianguo Mei, Tadanori Kurosawa, Won-Gyu Bae, Jeffrey B.-H. To, and Zhenan Bao (Standford Univ., USA)

Some animals, such as the chameleon and cephalopod, have the remarkable capability to change their skin colour. This unique characteristic has long inspired scientists to develop materials and devices to mimic such a function. However, it requires the complex integration of stretchability, colour-changing and tactile sensing. Here we show an all-solution processed chameleon-inspired stretchable electronic skin (e-skin), in which the e-skin colour can easily be controlled through varying the applied pressure along with the applied pressure duration. As such, the e-skins colour change can also be in turn utilized to distinguish the pressure applied. The integration of the stretchable, highly tunable resistive pressure sensor and the fully stretchable organic electrochromic device enables the demonstration of a stretchable electrochromically active e-skin with tactile-sensing control. This system will have wide range applications such as interactive wearable devices, artificial prosthetics and smart robots.


C (Room 217)

11 Touch and Interactive Displays II

Date: Aug. 29 (Wed.), 2018Time: 10:50~12:10Session Chair: Prof. Steve Park (KAIST, Korea)

C11-3 11:40~11:55

The Use of Near-Field Electrospinning to Print Bridge Electrodes for Touch Panel Applications

Kye-Si Kwon (Soonchunhyang Univ., Korea), Seongjun Kim (Samsung Electronics Co., Ltd., Korea), Soobin Oh, and Md. Khalilur Rahman (Soonchunhyang Univ., Korea)

Flexible transparent electrodes (FTEs) has been important components for exible optoelectronic devices, including photovoltaic cells, organic light-emitting diodes and touch panels [1,2]. In this study, we propose the use of NFES to print conductive line with width less than 5 mm on PET film so that the patterns can be invisible to naked eyes. As a practical application of NFES, bridge electrodes are printed between two transparent ITO conductive PADs on a PET substrate, which is designed for flexible transparent touch panel sensor.

C11-4 11:55~12:10

Improved Touch Pen Alignment Method by Vision Cameras for Higher Precision

Sinhu Choi (LG Display Co., Ltd., Korea)

To get more convenience on the display, a high precise input tool of touch devices is moving from finger to pen. As the touch pen becomes more widespread, higher sensing precision of the touch digitizer is also required. Manufacturers have begun to produce higher resolution touch devices and need to evaluate them with test equipment and test methods that have enough features to measure high touch accuracy. In this study, we have defined unintended measurement error factors during evaluating a touch pen and proposed a method to minimize them in order to get higher precision and accuracy. We have developed a pen alignment method that minimizes these three error factors by using the x, y, and z axis vision cameras to image the position of the pen tip. From this research, the Improved Pen Alignment method which enables reliable touch performance evaluation for various types of touch pens with high accuracy (0.02 mm) has been acquired.


D (Room 218)

12 Perovskite Materials

Date: Aug. 29 (Wed.), 2018Time: 10:50~12:20Session Chairs: Prof. Soo Young Kim (Chung-Ang Univ., Korea)

Dr. Jong Hyun Park (LG Display Co., Ltd., Korea)

D12-1 10:50~11:15

Halide Perovskite Dot Emitters for Display Applications

Young-Hoon Kim and Tae-Woo Lee (Seoul Nat'l Univ., Korea)

Halide perovskites have been studied as promising light emitters in display applications due to high color-purity and easy color-tunability. However, low photoluminescence quantum efficiency (PLQE) at room temperature is a challenge that should be overcome. Here, we report ligand-engineered perovskite dots based on methylammonium (MA) and formamidinium (FA) cations beyond quantum size and highly efficient perovskite light-emitting diodes (PeLEDs). We effectively controlled the dimension of perovskite dots by tuning the density and length of ligands. Perovskite dots with a dimension larger than exciton Bohr diameter (regime beyond quantum size) showed size-insensitively high color-purity and PLQE by preventing the non-radiative recombination of charge carriers at the surface traps and inside the dots, and also improved the charge transport capability in perovskite dot films. With these strategies, we demonstrated highly efficient PeLEDs (15.5 cd/A for MAPbBr3 dot PeLEDs and 9.156 cd/A for FAPbBr3 dot PeLEDs).

D12-2 11:15~11:40

Blue Emitting Square Planar Metal Complexes for Displays and Lighting Applications

Jian Li, Samuel Shin, Kody Klimes, and Zhiqiang Zhu (Arizona State Univ., USA)

In this presentation, we will discuss our continuing efforts on the design, synthesis and characterization of novel platinum complexes for displays and lighting applications. The photo-physics, electrochemistry, electroluminescent properties and operational stability of these novel metal complexes, including deep blue narrowband emitters, blue emitters with 6-membered chelate rings and blue MADF emitters, will be discussed, particularly including our 10-year effort in the design of blue emitting phenyl-pyridine based metal complexes. The rational molecular design enables us to develop cyclometalated metal complexes with both photon-to-photon (in thin film) and electron-to-photon (in device settings) conversion efficiency close to 100% for OLED applications. Our approaches to achieve high efficiency white OLED using a single emitter will be also included.


D (Room 218)

12 Perovskite Materials

Date: Aug. 29 (Wed.), 2018Time: 10:50~12:20Session Chairs: Prof. Soo Young Kim (Chung-Ang Univ., Korea)

Dr. Jong Hyun Park (LG Display Co., Ltd., Korea)

D12-3 11:40~11:55

Photo Aligned Nano Rod Emissive Films by Printing for LCD Backlighting

Swadesh Kumar Gupta, Maksym Prodanov, Valerii Vashchenko, Vladimir G. Chigrinov, Hoi Sing Kwok, and Abhishek Kumar Srivastava (HKUST, Hong Kong)

The inkjet printing has been used to deposit uniform nanorod (NR) films on the photoaligned surface over a large area (2.5-inch substrate). Inkjet printing has an essential advantage over other film deposition methods to get thick NR films with high optical and PL properties. In the present work, we have used liquid crystal monomer (LCM) as a host material to align NRs on a photoaligned substrate to utilize the polarized emission from NRs to improve the optical efficiency of LCDs, where the polarized light is an essential requirement [1,4]. We have optimized the inkjet ink by optimizing the content of the solvents, monomers, and NRs for the uniform printing of the NR films. We have shown a multiple layer inkjet printing for different NRs in different layers. Thus, printed NREFs are characterized by high polarization ratio of 7.1:1, which correspond to a degree of polarization ~0.75.

D12-4 11:55~12:20

Novel Perovskite Nano-Particles for Display Applications

Shu-Wen Dai, Bo-Wei Hsu, Tsu-Yu Chou, and Hao-Wu Lin (Nat'l Tsing Hua Univ., Taiwan)

In this talk, I will show a novel perovskite nano-particles synthesized by spray method with excellent performance of ~100% photoluminescence quantum yield (PLQY) in both the solution and the solid-state neat film, very narrow 20-nm full-width-half-maximum emission spectrum, extremely saturated green emission with CIE coordinates of (0.161, 0.769) as well as excellent color-conversion-type device characteristics of 121 lm/W and 28% external quantum efficiency (EQE). Another very intriguing class of the emitters for display application is the thermally activated delay fluorescent (TADF) organic small molecules. I will also talk about the new diboron-based molecules, which show excellent TADF and organic light-emitting diodes (OLEDs) properties. The compounds exhibit PLQY of ~100% and 84% horizontal dipole orientation ratio in the thin film, yield an OLED with a high EQE of 38%, a current efficiency of 140 cd/A and a power efficacy of 122 lm/W and an efficiency roll-off of only 0.3% at 1000 nits.


D (Room 218)

13 Holographic Near-Eye Displays

Date: Aug. 29 (Wed.), 2018Time: 10:50~12:20Session Chair: Dr. Uwe Vogel (Fraunhofer FEP, Germany)

E13-1 10:50~11:15

Withdrawal

E13-2 11:15~11:40

Optical See-Through Near-to-Eye Display with Depth of Focus Control

Jae-Hyeung Park and Seong-Bok Kim (Inha Univ., Korea)

Optical see-through near-to-eye display (NED) is a key device for augmented reality applications. In this presentation, we introduce our recent work to realize the optical see-through NED with depth of focus control. The proposed method is based on a waveguide-type Maxwellian display configuration with computer generated hologram contents whose carrier waves are used for the depth of focus control.

E13-3 11:40~12:05

Full-Color Holographic Near-Eye Display with Natural Depth Cues

Seyedmahdi Kazempourradi, M. Kıvanç Hedili, Burak Soner, Ali Cem, Erdem Ulusoy, and Hakan Ürey (Koç Univ., Turkey)

Visual discomfort including headaches, eye strain and motion sickness associated with stereoscopic headsets create less than desirable viewing experience. Matching the vergence and accommodation, depth cues and natural blurring of images are all important for comfortable 3D experience with near-eye displays. Computational holographic displays are the only solution which can provide all the natural depth cues and visual comfort. We developed a holographic near-eye display and achieved full-color and high-quality holograms with high resolution and true per-pixel focal control in the fovea. The experimental results prove that a holographic near-to-eye display is promising solution for the future of augmented and virtual reality.


D (Room 218)

13 Holographic Near-Eye Displays

Date: Aug. 29 (Wed.), 2018Time: 10:50~12:20Session Chair: Dr. Uwe Vogel (Fraunhofer FEP, Germany)

E13-4 12:05~12:20

Characteristics of Holographic Lens and Eye-Box for Holographic Near-Eye Display

Changwon Jang, Kiseung Bang, Gang Li, and Byoungho Lee (Seoul Nat'l Univ., Korea)

The holographic near eye display can provide a natural focus cue and can satisfy high resolution, making it a strong candidate for future near-eye displays. Although off-axis holographic lens generates severe aberration, holographic display has a unique capability that can compensate the optical aberration with its intrinsic principle of wavefront modulation, which makes the combination of holographic display and holographic lens a well suited choice. In this study, we present a comprehensive analysis including the aberration characteristics and the effect on Wigner distribution function (WDF) of intrinsic eye-box. The analysis can be used for more analytic aberration compensation method as well as eye-box expansion method. Lastly, we suggest an idea that can overcome the limitation of eye-box, which can be an important break-through for near-eye holographic display.


F (Room 313)

14 QD, OLED, and Lighting

Date: Aug. 29 (Wed.), 2018Time: 10:50~12:25Session Chair: Dr. Noh-Joon Park (CPRI, Korea)

F14-1 10:50~11:15

Barrier Less Quantum Dot Film for Display and Lighting Applications

Young Wook Ko, Yongduk Kim, Yong-Hwan Yoo, Taehee Park, Jung-Chul Shin, Myung-Keun Hwang (CPRI, Korea), Wanggun Yu, and Woosik Lee (GLVISION Co., Ltd., Korea)

Meanwhile, quantum dot technology has brought a lot of attention from many people as it has many useful characteristics. However, the quantum dot film is not stable for heat, oxygen, moisture, and photon flux, so it is necessary to use protective barrier films for commercial quantum dot film product1. Recently, we have successfully developed a single quantum dot film that does not require protective barrier films. The developed single quantum dot film technology was a very useful tool for producing more competitive products and used to successfully create liquid crystal display (LCD) displays and light emitting diode (LED) lighting products. The number of products using this technology is expected to continue to increase in the near future.

F14-2 11:15~11:40

Colloidal Quantum Dot Optoelectric Applications

Kyung-Sang Cho and Chan-Wook Baik (Samsung Advanced Inst. of Tech., Korea)

Colloidal quantum-dots (QDs) have been considered as a promising candidate of materials for electroluminescent (EL) light-emitting devices with many technological advantages, such as high quantum yields, narrow emission, spectral tunability, solution processability, and a higher stability than organic lumophores. The use of QDs in the light-emitting diodes was first proposed by Alivisatos et al. and various approaches have been followed to improve the performance of devices, including the design of novel device structures, the development of novel QD and transport materials, and the optimization of carrier injection. Recently a functioning monochromatic-QD-display and full-color RGB QD-display was demonstrated by our group. In this report, various issues of QD-LED fabrication and enhancement of the device performance on QD-LED and QD-display are discussed including the design of QD materials, device structure, interface control, charge/energy transfer of QD layer and QD-patterning. Studies of the QD-monolayer assembled structure and their application into the QD white-light-emitting devices are also shown. Besides QD-LEDs, some recent research for the optoelectronic device applications (QD lasers and high-performance QD phototransistors) will be presented.


F (Room 313)


Date: Aug. 29 (Wed.), 2018Time: 10:50~12:25 Session Chair: Dr. Noh-Joon Park (CPRI, Korea)

F14-3 11:40~11:55

Enhancing the Outcoupling Efficiency of OLED Using the Built-In High Haze Glass-Fabric Reinforced Hybrimer (GFRHybrimer) Films

Young-Woo Lim, Seung-Mo Kang (KAIST, Korea), O Eun Kwon, Hyunsu Cho, Jonghee Lee, Young-Sam Park, Nam Sung Cho (ETRI, Korea), Won-Yong Jin (Chonbuk Nat'l Univ., Korea), Jaeho Lee (KAIST, Korea), Jae-Wook Kang (Chonbuk Nat'l Univ., Korea), Seunghyup Yoo (KAIST, Korea), Jaehyun Moon (ETRI, Korea), and Byeong-Soo Bae (KAIST, Korea)

Herein, we report a route to fabricate a robust glass-fabric reinforced hybrimer (GFRHybrimer) flexible film equipped with light extraction capacity. The fabricated GFRHybrimer film exhibited excellent surface smoothness (~ 0.3 nm), thermal stability (~200℃), dimensional stability (~13 ppm/℃) and chemical stability,making it directly suitable as a substrate for organic light emitting diodes (OLEDs). Our hazy GFRHybrimer film showed a haze level of 90% and a high total transmittance of 90%. Compared to the device characteristics of OLED fabricated on the transparent GFRHybrimer film, those fabricated on hazy GFRhybrimer film were highly enhanced. To be specific, an outstanding enhancement in external quantum efficiency of 103% was achieved with widened luminace distribution and negligible angular spectral distortion. Thanks to its robustness and excellent light extraction capacity, our flexible hazy GFRHybrimer film can be extended to various photonic applications, in which both flexibility and emission property enhancement stronglymatter.

F14-4 11:55~12:10

Organic Light-Emitting Diodes for Electroluminescent Packagings

Changhun Yun (KITECH, Korea)

Design and materials for a packaging have been developed for better visual merchandising. Recently, designers started to utilize the light for eye-catching and distinguishable packagings. Although the electroluminescent device based on inorganic phosphors has widely adopted for blinking textures or images, it is still challenging to realize lighting packaging because of high operation voltage, low efficiency and low brightness. OLED also can be a potential candidate as the light source in the illuminated packaging due to high brightness, thin and flexible nature, and high efficiency. However, the fabrication cost does not meet the requirement of packaging industry because the lighting pattern is determined during the fabrication process. To avoid this limit, we utilize the digital printing method to pattern lighting OLEDs after the whole fabrication process. The details of the digital printing method and more experimental results depending on the various OLED structures will be presented and discussed.


F (Room 313)


Date: Aug. 29 (Wed.), 2018Time: 10:50~12:25 Session Chair: Dr. Noh-Joon Park (CPRI, Korea)

F14-5 12:10~12:25

First-Order Estimation on the Constraints of Radiative Recombination Zone Distribution in Organic-Inorganic Halide Perovskite Light Emitting Diodes

Jaehyeok Park, Jaeho Lee, and Seunghyup Yoo (KAIST, Korea)

In this study, we aim to get insight into optical design strategies to improve outcoupling efficiencies (ηi>out) of perovskite light-emitting diodes (PeLEDs). The novel predictive model for planar structure is used to find constraints of the location of recombination zone (RZ) inside the emission layer (EML). Assuming lossless EML and 100% electrical efficiency, it was possible to find ideal ηi>out and other loss-mode fractions for PeLEDs. With the sensitivity to two-beam interference conditions of ηi>out, constraints on RZ distribution can be found, providing key clues to this inverse outcoupling problem. Although the model used in this study ignores absorption losses in the EML. The strong dependency of optical characteristics on the location of RZ enables the first-order estimation on where the light emission originates within the EML. We believe this study will play an important role in better understanding the optical properties of PeLEDs and eventually in improving their optical efficiencies.


G (Room 314~315)

15 Si Transistors I

Date: Aug. 29 (Wed.), 2018Time: 10:50~12:10Session Chairs: Prof. Naoto Matsuo (Univ. of Hyogo, Japan)

Prof. Yong-Hoon Kim (Sungkyunkwan Univ., Korea)

G15-1 10:50~11:15

Poly-Si TFT Technology from Viewpoints of Low-Temperature Crystallization and High-Performance Device

Naoto Matsuo (Univ. of Hyogo, Japan)

TFTs utilizing the Low-Temperature Polycrystalline-Si (LTPS) are very crucial for the system-on-glass. The requirements for the LTPS film are a high quality, a large grain size and a position control of the nucleation. To satisfy those requirements, the promising crystallization methods have been presented. In addition, the novel device structures have been developed. For the excimer laser crystallization, a large grained film with a high-quality was provided. It was also clarified that hydrogens in a-Si film greatly improved the crystallinity of the poly-Si film. For a soft X-ray crystallization, it reduced the threshold temperature of crystallization for a-Si, Ge and SixGe1-x films. Tunneling Dielectric Thin-Film Transistor (TDTFT) was proposed and fabricated. It drastically reduced the gate-off current. In addition, the TDTFT improved the hump effect. We conclude that TDTFT will suitable as a candidate of the next generation poly-Si TFT structure.

G15-2 11:15~11:40

Low Temperature Growth of Group-IV Semiconductors on Insulator for Advanced Flexible Electronics

Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan), and Isao Tsunoda (Kumamoto College, Japan)

Development of low-temperature (≤ 300 ƃ) crystallization techniques of high quality group-IV semiconductors on insulator is desired to realize advanced flexible electronics, where high speed thin-film transistors and high efficiency optical devices are integrated on flexible plastic sheets. In line with this, various techniques, such as solid-phase crystallization (SPC), metal-induced crystallization (MIC), metal-induced lateral crystallization (MILC), and pulsed laser annealing have been investigated. Among them, utilization of catalysis in MIC and MILC is a promising approach to decrease the crystallization temperatures. In the presentation, we review recent progress in MIC and MILC of group-IV semiconductors on insulator. These techniques are expected to facilitate realization of the advanced flexible electronics.


G (Room 314~315)

15 Si Transistors I

Date: Aug. 29 (Wed.), 2018Time: 10:50~12:10Session Chairs: Prof. Naoto Matsuo (Univ. of Hyogo, Japan)

Prof. Yong-Hoon Kim (Sungkyunkwan Univ., Korea)

G15-3 11:40~11:55

Effective Laser Crystallization of PECVD Si Films without De-Hydrogenation

Takashi Noguchi, Yuya Ishiki, Tatsuya Okada (Univ. of the Ryukyus, Japan), Taro Morimura, Atsushi Ota, and Yasushi Nishikata (ULVAC, Japan)

On glass, hydrogenated amorphous Si films of 50 nm thickness were deposited using PE CVD at 300℃. Subsequently, BLDA using 445 nm beam has been performed by controlling the output power at a scanning speed at 500 mm/s without adding any higher temperature de-hydrogenating annealing. Crystalized behavior for the Si films has been investigated using UV reflectance spectra, spectroscopic ellipsometry etc. The surfacemorphology for the Si surface after BLDA was analyzed using AFM. Furthermore, BLDA has been done directly for the hydrogenated amorphous Si films on PI (PolyImide) sheetwithout adding subsequent higher temperature annealing above 300℃. By adopting BLDA directly for PE CVD Si films deposited below 300℃, not only shortening the LTPS takt time but also lowering the process temperature should be possible. Additionally, high performance LTPS TFTs are expected to be realized not only on glass but also on flexible sheets.

G15-4 11:55~12:10

Crystallization of Si Film on PC (Poly-Carbonate) for Low-Cost LTPS TFT Formed below 200℃

Yuya Ishiki, Futa Gakiya, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus, Japan), and Naoya Kawamoto (Yamaguchi Univ., Japan)

UV reflectance spectroscopy was used for the evaluation of crystallinity after ELA, additionally, AFM was used to evaluate the surface condition of the Si films. peaks are confirmed at wavelengths of 280 nm and 360 nm. From the value of RMS that the surface flatness degradation peculiar to the case of crystallized Si surface after ELA irradiation is seen. By adopting the thermal buffer layer having a low thermal conductivity film, thermal damage to the PC substrate can be suppressed during laser annealing and crystallization with high laser energy becomes possible. Since Poly-Si film was obtained stably on a transparent PC sheet, high performance TFT fabrication for low-cost, transparent, highly functional flexible display application can be expected.


H (Room 316~317)

16 Smart Processing for Stretchable/Deformable Electronics

Date: Aug. 29 (Wed.), 2018Time: 10:50~12:20Session Chair: Prof. Jeonghyun Kim (Kwangwoon Univ., Korea)

H16-1 10:50~11:15

Textile-Based Wearable Electrochemical Energy Storage Devices

Zijian Zheng (The Hong Kong Polytechnic Univ., Hong Kong, China)

Wearable electronics is foreseen to be the next major technology after smart phone in the near future. However, most conventional electronic devices are rigid, bulky, and heavy, making them difficult to wear. On the other hand, textiles are materials that have been worn by human beings for more than a thousand years. Textiles are flexible, lightweight, conformal, and highly manufacture-able. This talk will introduce how our research group makes use of fibre and textile for wearable electronics. These fibre-based electronic devices can function as high-performance electronics while maintaining the flexibility, lightweight, permeability, processibility, and even washing ability like textiles. In addition, we also show that fibre-based device can significant improve the electrochemical properties of the devices.

H16-2 11:15~11:40

Fully Formed Reverse Fabrication Techniques for Flexible Bio-Integrated Electronics

Ki Jun Yu (Yonsei Univ., Korea)

Advanced capabilities in electrophysiology recording are necessary for the treatment of diseases associated with important organs such as brain and heart. The most advanced technologies utilizes flexible implantable electronics. Unfortunately, however, the penetration of bio-fluids into the underlying active electronics and any ensuing electrochemical reactions pose significant safety risks. Here, we demonstrated that an ultrathin, leakage-free, biocompatible thermally grown SiO2 can completely protect an underlying array of flexible electronics while allowing for electrophysiological measurements through capacitive coupling between tissue and the electronics. The resulting current-leakage levels and operational lifetimes are significantly smaller and between two and three orders of magnitude longer than those of other conventional flexible-electronics systems. Systematic electrophysiological studies with normal, paced and arrhythmic conditions in rabbit hearts show the capabilities of the capacitive-coupling approach. These advances provide realistic pathways towards the broad applicability of biocompatible, flexible electronic implants.


H (Room 316~317)

16 Smart Processing for Stretchable/Deformable Electronics

Date: Aug. 29 (Wed.), 2018Time: 10:50~12:20Session Chair: Prof. Jeonghyun Kim (Kwangwoon Univ., Korea)

H16-3 11:40~12:05

Multi-Functional Flexible Sensor Sheets for Wearable and IoT Applications

Kuniharu Takei (Osaka Prefecture Univ., Japan)

Mechanically flexible and stretchable devices have attracted much attention for a next class of electronics such as flexible photovoltaics, flexible displays, and wearable electronics. In particular, multiple sensors for potential applications such as wearable healthcare devices and Internet of Things (IoT) concepts are one of the most important requirements to develop for moving forward to building the flexible sensor system platform. To address this requirement, in this talk, flexible physical and chemical sensor sheets using mainly inorganic nanomaterials will be introduced by proposing low-cost and macroscale fabrication methods and material systems. Especially human-interactive flexible sensors to detect human motion, health condition, and room environment information are mainly discussed. In addition to the fundamental sensor characteristics, integrated device applications with several sensors on a flexible film are demonstrated as proof-of-concepts for multi-functional flexible sensor sheets.

H16-4 12:05~12:20

Novel Patterning Technique via Atomically Thin Graphene Etch Masks for Integrated 2D Heterostructure Device

Junyoung Kwon (Yonsei Univ., Korea), Jangyup Son, SunPhil Kim, Yinchuan Lv, Jaehyung Yu (Univ. of Illinois at Urbana-Champaign, USA), Jong-Young Lee (Yonsei Univ., Korea), Huije Ryu (Univ. of Illinois at Urbana-Champaign, USA), Kenji Watanabe, Takashi Taniguchi (NIMS, Japan), Rita Garrido-Menacho, Nadya Mason, Elif Ertekin, Pinshane Y. Huang, Arend van der Zande (Univ. of Illinois at Urbana-Champaign, USA), and Gwan-Hyoung Lee (Yonsei Univ., Korea)

In next generation molecular nanotechnologies, atomically-precise fabrication methods are needed to controllably, scalably and reproducibly engineer devices with designed functionality. Here, we demonstrate the novel use of monolayer graphene as a highly selective etch mask in van der Waals (vdW) heterostructures and application in nanoelectronic and nanomechanical devices. Based on that, we fabricated contacts to graphene devices encapsulated within hexagonal boron nitride (hBN) layers, where deposited metal touches only the fluorinated graphene regions through etched holes in the hBN. The devices showed remarkably high carrier mobility of ~140,000 cm2V-1s-1 at room temperature and surprisingly low contact resistance of 80 Ω･μm By bringing critical capabilities together, along with recent advancements in the scalable growth of 2D materials, this selective etch will find wide applicability in realizing 2D heterostructure

devices as a viable technology.


A (Room 211~213)

17 OLED Emissive Materials

Date: Aug. 30 (Thu.), 2018Time: 09:00~10:30Session Chair: Prof. Lixin Xiao (Peking Univ., China)

A17-1 09:00~09:25

Phosphorescent OLEDs: Materials and Technology

Michael S Weaver, Nicholas J. Thompson, Vadim I. Adamovich, and Julie J. Brown (Universal Display Corp., USA)

Organic light emitting device (OLED) displays are now in commercial production for a range of products. These include smart-phones, tablets, ultra-high definition (UHD) TVs, and newly emerging applications such as augmented reality/virtual reality (AR/VR) headsets, wearable devices and solid-state lighting. OLEDs offer excellent visual performance, and through the use of phosphorescent OLED (PHOLED) technology, lower power consumption than AMLCDs. OLEDs possess novel features such as transparency and flexibility, which will further increase their market potential over the next few years, and provide a much greater differentiation from current technologies. In this presentation we outline how PHOLED technology meets the ever more demanding performance requirements of future products e.g. efficiency and lifetime. We will outline how this technology can further improve PHOLED performance to enable ever increasing product performance.

A17-2 09:25~09:50

Exciton-Mediated Formation of Polaron Pairs Shortens Lifetime of Blue-Electrophosphorescence Devices

Youngmin You (Ewha Womans Univ., Korea)

Chemical degradation of organic layers is responsible for short lifetimes of organic light-emitting devices.1-4 However, the molecular mechanism by which degradation initiates has yet to be fully understood to date. My group investigated exciton- mediated formation of a radical ion pair between a wide bandgap host and a series of blue-phosphorescent Ir(III) complexes. Electrochemical studies predicted an occurrence of reductive electron transfer from dopants to host exciton to form a polaron pair (radical ion pair). A variety of spectroscopic techniques were employed to monitor the generation and annihilation of the radical ion pair. Analyses of degradation byproducts indicated breakage of C-N bonds in the polaronic species, prior to the annihilation by charge recombination. A linear correlation exists between device lifetimes and rate constants for charge recombination. These findings demonstrate the importance of controlling exciton-induced electron transfer within an emitting layer, and enable novel strategies to improved device longevity.


A (Room 211~213)

17 OLED Emissive Materials

Date: Aug. 30 (Thu.), 2018Time: 09:00~10:30Session Chair: Prof. Lixin Xiao (Peking Univ., China)

A17-3 09:50~10:15

Exciplex: Its Nature and Applications to OLEDs

Chang-Ki Moon, Hwang-Bum Kim, Kwon-Hyun Kim, Hyun Shin, Hyun-Gu Kim, and Jang-Joo Kim (Seoul Nat'l Univ., Korea)

Excited charge transfer complexes (Exciplex) formed between donor and acceptor materials are frequently encountered in organic photonic devices such as in organic light emitting diodes and organic photovoltaics. In this presentation we will firstly discuss on the nature of exciplex including the electronic structure, emission processes and diffusion. Further discussion will be given to the application of exciplex forming systems as the triplet harvesting fluorescent molecular system and as the co-host for phosphorescent and fluorescent dopants for ultimate efficiency in OLEDs.

A17-4 10:15~10:30

Exciplex Forming Mixed Cohost Utilizing Aggregation Induced Emission for Deep Blue Emission

Jin Won Sun, Dae Yup Shin, and Hyein Jeong (Samsung Display Co., Ltd., Korea)

Recently, the importance of finding a proper host for deep blue emission in organic light emitting diodes (OLEDs) has been risen. One of the best option is an exciplex forming mixed cohost which has advantage in the perspective of energy transfer in host-guest system and charge balance in emission layer (EML), however the lower photon energy of exciplex compared to the constituting hole and electron transporting materials makes the exciplex less attractive for the utilization as deep blue host. Herein, we report a mixed cohost for blue OLEDs, which the system contains two different phenomenon of intermolecular charge transfer (CT) and aggregation induced emission (AIE). The emission which was originated from aggregation of electron transporting material (ETM) enabled the mixed cohost for deep blue emission with additional benefit from forming exciplex.


B (Room 214~216)

18 Perovskite and QD-based Devices and Stability

Date: Aug. 30 (Thu.), 2018Time: 09:00~10:05Session Chairs: Prof. Jeonghun Kwak (Univ. of Seoul, Korea)

Prof. Jea Woong Jo (Dongguk Univ., Korea)

B18-1 09:00~09:25

Photoluminescent Perovskites and Electroluminescent Quantum Dots

Hao Chen, Juan He, Caicai Zhang, Yanan Wang, Shin-Tson Wu, and Yajie Dong (Univ. of Central Florida, USA)

I will report our recent developments on photoluminescent perovskite materials and electroluminescent quantum dot devices. A versatile swelling-deswelling microencapsulation strategy has been developed to achieve well dispersed, intimately passivated, green emitting perovskite nanoparticles inside polymer film matrixes with high photoluminescence efficiency, color purity and ultrahigh stability against heat and water exposure. These outstanding green perovskite-polymer composite films could work with other red state-of-the art downconverters (i.e. QDs or narrow band phosphors) and enable low cost, efficient, color-vivid, and cadmium free back light unites (BLUs) for liquid crystal displays (LCDs). We have developed ultra-bright and efficient deep red quantum dot light emitting devices (QLEDs). While actively working on extending QLED lifetime to meet demanding requirements of display industry, we are also exploring emerging photomedical light source markets. I will report recent developments of flexible QLED light sources which promise to enable the widespread clinical acceptance of photomedical strategies for cancer treatments, wound repair or aesthetics.

B18-2 09:25~09:50

Bright and Efficient Light-Emitting Diodes Based on Perovskite Quantum Dots

Kai Wang and Xiao Wei Sun (Southern Univ. of Science and Tech., China)

Perovskite quantum dots (PeQDs) have been rapidly developed recently due to their outstanding luminescence performance, including narrow emission, precisely tunable emission wavelength, high efficiency, etc., which are beneficial for wide color gamut display. We develop a polar solvent controlled ionization (PCI) method to synthesize all inorganic PeQDs and the QYs of blue (462 nm) and sky blue (481 nm) PeQDs can reach up to 82% and 90% respectively, which are one of the highest records for blue PeQDs so far. Moreover, surface defects caused by Pb are reduced by introducing rich Br resulting in 240% enhancement of EQE of PeLED. In addition, we dope cation (FA(1-x)CsxPbBr3, MA(1-x)CsxPbBr3) to tune the bandgaps of the perovskite materials, lower the hole injection barrier, and obtain the highly efficient PeLED. The max luminance of FA0.8Cs0.2PbBr3 PeLED is 55005 cdm-2 which is 6.4 times of that of FAPbBr3 PeLED.


B (Room 214~216)

18 Perovskite and QD-based Devices and Stability

Date: Aug. 30 (Thu.), 2018Time: 09:00~10:05 Session Chairs: Prof. Jeonghun Kwak (Univ. of Seoul, Korea)

Prof. Jea Woong Jo (Dongguk Univ., Korea)

B18-3 09:50~10:05

Origins of Operational Instability in Quantum Dot Based Light-Emitting Diodes

Jun Hyuk Chang (Seoul Nat`l Univ, Korea), Byeong Guk Jeong (KAIST, Korea), Donghyo Hahm, Hark June Lee (Seoul Nat`l Univ, Korea), Doh C. Lee (KAIST, Korea), Kookheon Char (Seoul Nat`l Univ, Korea), and Wan Ki Bae (Sungkyunkwan Univ., Korea)

We report the operational instability of quantum dot (QD) based light-emitting diodes (QLEDs). Spectroscopic analysis on QD emissive layer within devices compared with the optoelectronic and electrical characteristics of devices disclose that the device efficiency of QLED under operation is deteriorated by two main mechanisms. The first is luminance efficiency drop of QD emissive layer in the running devices owing to the accumulation of excess electrons in QDs, which escalates the possibility of non-radiative Auger recombination processes in QDs. The other is the electron leakage toward HTLs that accompanies irreversible physical damage to HTLs by creating non-radiative recombination centers. These processes are distinguishable in terms of the timescale and the reversibility, but both stem from a single origin, the discrepancy between electron versus hole injection rates into QDs. Based on experimental and calculation results, we propose mechanistic models for the operation of the-state-of-the-art QLEDs in individual quantum dot levels and offer rational guidelines that promise the realization of high performance QLEDs with proven operational stability.


C (Room 217)

19 Human Factors for Displays

Date: Aug. 30 (Thu.), 2018Time: 09:00~10:30Session Chair: Dr. Thierry Leroux (ELDIM, France)

C19-1 09:00~09:25

Design and Metrology for HDR/WCG Displays

Kenichiro Masaoka (NHK, Japan)

The Rec. 2020 RGB primary set was designed to reproduce most real object colors. Presently, many displays with Rec. 2020 RGB inputs are commercially available. However, their inherent gamut sizes vary. Consequently, the gamut size measurement is important. Display gamuts usually render complex shapes in a uniform color space, requiring observers to change views to comprehend a 3D plot. For practical gamut measurement of well-behaved HDR/WCG RGB displays, whose gamuts are usually uniquely determined based on the chromaticities of the RGB primaries assuming a perfect additive color mixing, a combination of conventional display metrics based on basic colorimetry is useful. Also, a 2D representation of a display color gamut, named gamut rings, the areal dimension corresponds to the volume within an arbitrary luminance and hue range, enables an intuitive approach to grasping the color volume of a complex shape in a quantitative manner.

C19-2 09:25~09:50

Scene Dependent AR Image Rendering of Optical See-Through HMDs

Pei-Li Sun and Yu-Ting Hsiao (Nat'l Taiwan Univ., Taiwan)

A color rendering model is proposed to enhance visual appearance of AR images for optical see-through HMDs. The optimized parameters were evaluated by a series of psychophysical experiments. The scene behind the glasses is analyzed and the highlight luminance of the masking area is estimated automatically to determine what level of luminance compensation is needed to achieve better visual appearance.


C (Room 217)

19 Human Factors for Displays

Date: Aug. 30 (Thu.), 2018Time: 09:00~10:30Session Chair: Dr. Thierry Leroux (ELDIM, France)

C19-3 09:50~10:15

Central, Peripheral and Binocular Vision

Hyung Ki Hong (SEOULTECH, Korea)

On retina of human eyes, photoreceptors called cone and rod are non-uniformly distributed. At fovea on the retina, density of cones is highest and resolving power of the eye is best. As the resolving power outside fovea is poor, the eyes rotates constantly to scan the large angular ranges. Left and right eyes moves in coordination to fix the viewing direction on the object. Field of view (FOV) of people can be divided into central vision and peripheral vision. By eye rotation, central vision can cover the whole area of the typical display. Nowadays, angular size of some displays like VR are larger than central vision. For these displays, role of peripheral vision becomes more important. In case of near eye displays, one or two eyes see the virtual images and good alignment between the eyes and the virtual images is important. In summary, for some of new display applications, better understanding about peripheral vision and binocular vision is necessary.

C19-4 10:15~10:30

Presence in Large Curved Display

Yung Kyung Park and Yoon Jung Kim (Ewha Womans Univ., Korea)

The purpose of this paper is finding the novel image quality aspect of large curved displays compared to flat displays. The viewing behavior was analyzed by eye-tracker results and questionnaire while watching moving videos. We have found that immersion behavior is aroused by presence-ness of viewing curved displays.


D (Room 218)

20 Micro LEDs I

Date: Aug. 30 (Thu.), 2018Time: 09:00~10:30Session Chair: Dr. Dong-Sun Lee (GIST, Korea)

D20-1 09:00~09:25

MicroLED Displays: Hype and Reality, Hopes and Challenges

Eric Virey and Pars Mukish (Yole Développement, France)

Interest in MicroLED displays has grown exponentially since the acquisition of Luxvue by Apple in 2014. Since then, numerous companies have initiated work on the development of this innovative technologies, leading to the filing of more than 1,500 patents by close to 150 companies. Today, the science is here, but MicroLED is an inherently complex display technology with cost drivers different from those of incumbent technologies. The concept is simple: each pixel is constituted of individual MicroLED emitters. However, several technological nodes are still to be levered: MicroLED device efficiency, mass transfer, color conversion, defect management and repair, light extraction and beam shaping. But, if successful, microLED displays could have profound impact on both the led and display markets and supply chains.

D20-2 09:25~09:50

Nitride MicroLEDs and Displays

Hongxing Jiang and Jingyu Lin (Texas Tech Univ., USA)

Since our invention in 2000, microLED has emerged as a promising technology for a range of applications. In particular, with the intrinsic material properties of inorganic semiconductors, microLED can provide much higher brightness levels than those of LCD and OLEDs. Furthermore, microLED can be operated at extreme conditions such as high or low temperatures (-100 to 120℃). Therefore, microLED arrays are ideal for self-emissive microdisplays and ultrahigh brightness and resolution large flat panel displays. Moreover, with high turn on/off speed, microLEDs and microdisplays appear to be the most suitable technology for the emerging three-dimensional (3-D) and augmented reality/virtual reality (AR/VR) applications. In this presentation, we discuss briefly the early development of microLEDs and the first full scale high-resolution (VGA) microLED microdisplay capable of delivering video graphic images via active driving using a hybrid approach by integrating microLED arrays with CMOS active matrix drivers. Possible approaches for achieving full color microdisplays will be highlighted.


D (Room 218)

20 Micro LEDs I

Date: Aug. 30 (Thu.), 2018Time: 09:00~10:30 Session Chair: Dr. Dong-Sun Lee (GIST, Korea)

D20-3 09:50~10:15

Printing MicroLEDs and MicroICs for Next Generation Displays

Christoper Bower (X-Celeprint Inc., Ireland)

Displays that use direct light emission from microLEDs have the potential to be bright and power efficient. High-throughput assembly technologies that accurately and cost-effectively deposit large arrays of microLEDs onto display substrates with high yield are key enablers for displays. Transfer-printing with elastomer stamps is a candidate assembly technology for making microLED displays. A variety of displays have been designed and fabricated using transfer-printed microLEDs and microICs.

D20-4 10:15~10:30

Characteristics of Adsorption Mass Transfer System Using AAO for Micro-LED Transfer

Seung Ho Park, Sung Hyun Byun, Dong Hyeok Seo, and Tae Hwan Song (Point Engineering. Co., Ltd., Korea)

The mass transfer system with AAO (Anodic Aluminum Oxide) exhibits uniform and an excellent adsorption performance due to high array of the nano-sized pores [2]. Moreover, high vacuum adsorption force can be obtained up to 2.1 N/cm2 (Typically, the porous chuck is 0.5 N/cm2.) with a specimen contact area of 25% from the open area. In this study, vacuum adsorption force was measured based on the size of the specimen and the pore size of the AAO relative to the vacuum adsorption area. Additionally, the micro-LED mass transfer device using AAO has been manufactured, and pick & place test was conducted. The LED, a total of 125 with a size of 160 um * 160 um were arrayed, and the mass transfer test was successfully achieved. Furthermore, the transfer error and the deviation were confirmed before and after the LED transfer.


E (Room 311~312)

21 Display Industry Forum

Date: Aug. 30 (Thu.), 2018Time: 09:00~17:30Session Chair: DSCC

● Display Market Outlook 09:00~10:30

- Cavin Lee, Director (DSCC Korea)

- JungHoon Chang, Senior analyst (Samsung Securities)

- Chris Chang, VP (Nomura Financial Investment)

● TV Market & Technology Outlook 10:45~12:10

- Bob O'Brien, Co-Founder & President (DSCC)

- KyuYoung(Stephen) Ko, VP / Head of TV Marketing Division

(LG Display Co., Ltd.)

● Supply Chain Executive Session 13:00~14:30

- Chiwoo Kim, President/CTO (AP Systems)

- Minho Sohn, VP, Marketing (Corning Precision Materials)

- Mike Hack, VP, Business Development (UDC)

● Smartphone Market and Technology Outlook 14:30~16:00

- Yoshio Tamura, Co-Founder & President of Asian Operations (DSCC)

- Ellike Chen, VP, Small & medium size display market research

(Sigmaintell)

- Byeong-Soo Bae, CEO (Solip Tech)

● Technologies Enabling Next Generation Displays-Foldable, QD CFs, QLEDs, MicroLEDs and more

16:00~17:30

- Mathias Mydlak, Doctor, Global Business Development Manager

(SCHOTT)

- Dong-Mee Song, Merck Technical Marketing Manager (Merck)

- Dong-Sun Lee, Professor (GIST)


F (Room 313)

22 QD-based Solar Cells

Date: Aug. 30 (Thu.), 2018Time: 09:00~10:15Session Chair: Dr. Sohee Jeong (KIMM, Korea)

F22-1 09:00~09:25

Improved Charge Collections and Photovoltaic Performances in Infrared Colloidal Quantum Dot Solar Cells

Younghoon Kim (DGIST, Korea), Jongmin Choi, Jea-Woong Jo, and Edward H. Sargent (Univ. of Toronto, Canada)

Colloidalquantum dots (CQDs) have attracted considerable attention in the fields of electronic and optoelectronic device applications due to their size-tunable bandgap, reducing the utilization of materials and large-scale processibility. Among them, lead sulfide (PbS) CQDs are a promising solar absorber to harvest an infrared (IR) light energy from the full solar spectrum. The development of surface chemistry in colloidal nanomaterials has enabled tremendous progress in the synthesis and surface modification of PbS CQDs using organic or inorganicligands. In addition, post-synthetic routes and device architecture engineering have resulted in the significant improvement of CQD solar cell performance. Recently, best-performing CQD solar cells reached certified power conversion efficiency (PCE) of 11.3% using a lead halide-passivated CQD ink, prepared based on the solution-phase ligand exchange. Here, we demonstrate the new approaches for further improvement of CQD solarcell performance.

F22-2 09:25~09:50

Interface Engineering for High Performing Bulk-Heterojunction Solar Cells

Shinuk Cho (Univ. of Ulsan, Korea)

In organic-based photovoltaic cells, aside from improvements in the design and synthesis of active materials, morphology control and interface engineering have emerged as key factors to further increase device efficiency and stability. With an interface engineering techniques for single junction solar cells, firstly, we have demonstrated enhanced power conversion efficiency (PCE) in inverted BHJ solar cells by introducing doped ZnO electron transport layer. The inclusion of an additional metal carbonate layer led to gradient doping of the ZnO ripple layer and improved the electron extraction properties by modifying the energy level without destroying the ZnO ripple structures. For tandem solar cells, we have demonstrated high efficiency homo-tandem solar cells with enhanced efficiency by introducing carbon-quantum-dot (CQD) doped PEI on TJ-ICL. The inclusion of CQDs in PEI layer led to better series connection in tandem solar cells. The highest performing tandem solar cell fabricated with C-dots doped PEI layer in ICL yield a maximum PCE of 12.13%; ~15% increase compared to tandem cells with pristine PEI layer.


F (Room 313)

22 QD-based Solar Cells

Date: Aug. 30 (Thu.), 2018Time: 09:00~10:15Session Chair: Dr. Sohee Jeong (KIMM, Korea)

F22-3 09:50~10:15

Conjugate Polymer Thin Films for Self-Powered Electrochromic Display

Eunkyoung Kim (Yonsei Univ., Korea)

Conjugated polymers (CPs) have emerged as promising electronic materials for their easy tunability of colors, carrier transport, and solution processibility. Nonetheless the loss of optical memory at colored and/or bleached states of CPs consumes significant energy that could be amplified as the area of a widow become larger. Mechanisms for self-coloration and -bleaching in electrochromic reactions were formulated to find out that the optical bistability may stem from the charge transport at the interfaces. The control on the interfacial charge transport plus charge balancing reactions afforded a low voltage working ECDs with a long bistability as shown in Figure 1. These results could be translated into an energy saving and self-powered ECDs. Taking advantage of the bistability and charge storage capacity of CPs, a color switchable electrochromic capacitor could be realized. Effect of the polymer structure and device structure on the EC properties will be discussed.


G (Room 314~315)

23 Oxide Transistors I

Date: Aug. 30 (Thu.), 2018Time: 09:00~10:35Session Chairs: Prof. Thomas Anthopoulos (KAUST, Saudi Arabia)

Prof. Myung-Gil Kim (Chung-Ang Univ., Korea)

G23-1 09:00~09:25

Hydrogen Anion and Subgap States in Amorphous In–Ga–Zn–O Thin Films

Joon Ho Bang, Satoru Matsuishi, Jung Hwan Kim, and Hideo Hosono (Tokyo Inst. of Tech., Japan)

Negative bias illumination stress instability occurs by the photoexcitation of the subgap states in amorphous In-Ga-Zn-O thin films. We report that there are an ionic hydrogens of ~1020 cm-3 in amorphous In-Ga-Zn-O thin films and the metal-hydride bonds give rise to subgap states near valence band maximum.

G23-2 09:25~09:50

Oxide Thin Film Transistor with Spin-on-Glass Gate Insulator

S. H. Hwang, Y. J. Baek, Y. L. Han, S. M. Lee, J. M. Lee, E. -J. Yun, and B. S. Bae (Hoseo Univ., Korea)

Top gate amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) was developed with spin-on-glass (SOG) insulator wihch was used for the buffer, gate insulator and inter layer dielectric layers. The spin on glass (SOG) has been used widely for interlayer dielectric in semiconductor process. The SOG can be processed on large area substrate and has the advantage of the planarization. The effects of dilution of SOG solution and the annealing environment will be discussed.


G (Room 314~315)




G23-3 09:50~10:05

Orders of Magnitude Enhancement in Conductivity-Tuning in InGaZnO TFTs by SiNX Passivation and Dual Gate Modulations

ChangDong Chen and Chuan Liu (Sun Yat-sen Univ., China)

Considerable attentions have been given to amorphous metal oxide (AOS), especially indium-gallium-zinc-oxide (IGZO), based thin film transistors (TFTs) due to the advantages of high mobility (about 10 cm2V-1s-1), high transparency, and room-temperature fabrication. Yet for ultrahigh definition displays, channel mobility required is above 30 cm2V-1s-1. Meanwhile, previous study on improving AOSs performance were mostly focused on partial doping low-dimensional materials (e.g. carbon nanotube), which are not suitable for large-area manufacturing. Here we present hydrogen doped IGZO TFTs with greatly improved transfer performance via simple plasma enhanced chemical vapor deposition (PECVD) technique. The enhanced conductivity-tuning is attributed with hydrogen diffusion from the SiNX passivation layer to IGZO during the annealing process. However, the incorporation of hydrogen might also create excessive electrons resulting negative shift of transfer characteristic and degraded subthreshold properties. To this end, we deposited an additional top gate on top of passivation layer, aiming to adjust the VTH. The resulting transistors exhibit orders of magnitude enhanced transconductance and acceptable subthreshold property.

G23-4 10:05~10:20

High-Performance and Reliable Heterostructure Metal-Oxide Thin-Film-Transistors

Min Uk Lee, Jeong-Wan Jo, Yoon-Jeong Kim, and Sung Kyu Park (Chung-Ang Univ., Korea)

We report a new strategy to achieve high-mobility and good operational stability in solution-processable metal-oxide TFTs via exploiting 2DEG system by using alternative indium-tin-zinc-oxide and indium-gallium-zinc-oxide bilayer. The corrugated structure includes alternative thin ITZO-IGZO and thick ITZO-IGZO region, showing vertically corrugated structure, which facilitate tuning of the accumulated electron concentration at off and on state via the charge control at the vertical interface. The optimized corrugated heterostructure TFTs exhibit a maximum field-effect mobility greater than 50 cm2V-1s-1 wit an on/off current ratio of > 108 and good operational stability (threshold voltage shift < 1 V at positive gate-bias stress of 10 ks). To exploit the underneath conduction mechanism of the corrugated heterostructure TFTs, we implemented a physical model by using a variety of chemical, structural, and electrical characterizations and technology computer-aided design (TCAD). The physical model reveals that the manipulation of effective charge control is accessible with the corrugated heterostructure, especially at the nanoscale vertical interface between ITZO and IGZO, demonstrating low off- and high on-current.


G (Room 314~315)




G23-5 10:20~10:35

Atomic Layer Deposited Quaternary In-Zn-Sn-O Thin Films for Emerging Electronic Devices

In-Hwan Baek, Jung Joon Pyeon (KIST, Korea), Taek-Mo Chung (KRICT, Korea), Jeong Hwan Han, Cheol Seong Hwang (Seoul Nat'l Univ., Korea), and Seong Keun Kim (KIST, Korea)

In this work, atomic layer deposition (ALD) process of amorphous In-Zn-Sn-O (a-IZTO) thin films is demonstrated as a new process and material as the oxide channel material for the latest version AMOLEDs. Replacement of Ga (from In-Ga-Zn-O) with Sn is expected to induce intimate spatial overlap of delocalized 5s orbital so that the carrier mobility could be enhanced to ~ 25 cm2/Vs. We successfully fabricated high-performance TFTs which operate in an enhancement-mode. Furthermore, a CMOS inverter could be fabricated using the optimized n-IZTO TFTs and p-SnO TFTs at low temperatures (250℃).This work coincides with a feasible demonstration of the ALD process of a-IZTO that can provide an excellent opportunity for a variety of functional devices.


H (Room 316~317)

24 Wearable Devices with Stretchable/Deformable Structures

Date: Aug. 30 (Thu.), 2018Time: 09:00~10:20Session Chair: Prof. Pooi See Lee (Nanyang Technological Univ., Singapore)

H24-1 09:00~09:25

Real Reality Interfaces with Interactive Light Field Displays

Roel Vertegaal (Queen's Univ., Canada)

In this abstract, I argue that the very presence of a headset is the chief limiting factor in Virtual/Augmented Reality systems. While more light-weight headset form factors may be developed in the future, we propose that Augmented Reality take the form of light field displays that are embedded in the environment instead. Light field displays render every angle of a scene through angular pixel technologies, and have the clear advantage of being able to provide multiple co-present and remote users with different views of the same scene, or with different views altogether, without head tracking.

H24-2 09:25~09:50

Wireless Sensors and Digital Healthcare

Jeonghyun Kim (Kwangwoon Univ., Korea)

In the past, electronic devices were difficult and heavy to move, but such smartphones and tablet PCs are becoming easier to move. In the future, it is expected that wearable electronic devices that are more convenient to use or attached to clothes or skin are expected. Such wearable devices are utilized in the form of a wearable sensor for diagnosing human health, and sensors for temperature, blood pressure, blood flow, oxygen saturation, and electrophysiological signals have been developed. These sensors have been applied to our body in a small, lightweight, thin form, but require additional connections to the power supply and data transfer. Near-field communication technology provides an easy-to-use battery-free platform for continuous monitoring of physiological health. This study reported ideas for wireless systems to monitor the optical properties of skin. The wireless platforms for optical evaluation are relevant for the proper use of clinical care, and at-home diagnosis.


H (Room 316~317)

24 Wearable Devices with Stretchable/Deformable Structures

Date: Aug. 30 (Thu.), 2018Time: 09:00~10:20Session Chair: Prof. Pooi See Lee (Nanyang Technological Univ., Singapore)

H24-3 09:50~10:05

Capacitive Pressure Sensor with High Sensitivity in Wide Pressure Range Using Thin Structured Ionic Gel

Haechang Lee, Hanul Moon, Hyukyun Kwon, and Seunghyup Yoo (KAIST, Korea)

Thin-film pressure sensors are attracting interest as they can be applied to artificial skin and wearable healthcare products. Pressure sensors for these applications should not only be highly sensitive to low pressure but also be operable over wide pressure range; furthermore, it should be thin enough to allow flexibility so that they can be applied to a variety of surfaces. In this study, we propose a capacitive pressure sensor with structured ionic gel. The ionic gel is electrically suitable and promising in terms of mechanical properties because it has low Youngs modulus similar to that of rubber. By using structures on surface of the ionic gel film, we show that it is possible to obtain high sensitivity of 1.1 kPa-1 at low pressure of 700 Pa and uniform linearity up to high pressure of 100 kPa. Since the pressure sensor can be manufactured as thin-film with thickness of 10 μ i>m, we believe the proposed pressure sensors can be easily attached to curved surfaces to detect various stimuli.

H24-4 10:05~10:20

Deformable and Biocompatible Electronics Using a Biodegradable Natural Material

Sung Pyo Park, Young Jun Tak, Hee Jun Kim, and Hyun Jae Kim (Yonsei Univ., Korea)

Wearable and implantable electronics are regarded as one of the most promising candidate for healthcare electronics. However, conventional healthcare electronics are commonly fabricated by using inorganic materials, so that it is not easily applicable to flexible electronics due to many problems such as mechanical instability, fragility, and high fabrication costs. In this regard, researches related to flexible electronics using organic materials such as small molecules, polymers, and metal-doped composites have been steadily emerging. However, conventional polymeric organic materials involve complex chemical synthesis and processing, which consume a lot of energy and produce toxic byproducts that cause environmental pollution. For these reasons, biologically reliable biomaterials are attracting a lot of attention due to many advantages such as high flexibility, simple processability, non-toxic property, and biodegradability. In this study, we successfully fabricated resistive random access memory (RRAM) which is key component of data storage system, and analyzed nonvolatile switching behavior by utilizing a novel biomaterial, glucose, as a switching layer of RRAM without additional purification or extraction.


A (Room 211~213)

25 OLED Materials Engineering

Date: Aug. 30 (Thu.), 2018Time: 11:00~12:30Session Chair: Prof. Youngmin You (Ewha Womans Univ., Korea)

A25-1 11:00~11:25

Development of Organic Semiconducting Materials

Yun-Hi Kim (Gyeongsang Nat'l Univ., Korea)

Organic semiconductors have been extensively developed with regards to their charge transport ability and have recently been demonstrated to be a possibilities for large-area, commercial electronic photonics and electronics. To develop the organic semiconducting materials for various organic electronics, there are many synthesis and design strategies. In this presentation, we will report design strategy of high mobility, environmental-friendly processability, and easy ambipolar transport for organic semiconducting materials.

A25-2 11:25~11:50

Long-Lived Highly Efficient Electron-Transporting Material for OLED

Mengying Bian, Fan Lv, Jiannan Gu, and Lixin Xiao (Peking Univ., China)

The electron-transport material (ETM) is one of the key factors to determine the efficiency and stability of organic light-emitting diodes (OLEDs). An ideal ETM requires high ET mobility, good exciton confinement as well as feasible charge injection from the anode. Technically, a high triplet energy (T1) is necessary for good exciton confinement, which can be achieved by limited molecule conjugation structures. Here, a novel ETM with a (A)n-D-(A)n structure of 27-TPSF is synthesized by combining electron-withdrawing TPY moieties with rigid spirobifluorene, and long-lived TADF-PhOLEDs with ultimate device efficiencies were reported. By using Ir(mppy)3 (T1 = 2.4 eV) as the green phosphorescent emitter and a TADF host, the optimized device with 27-TPSF as ETM exhibits a Von of 2.4 V, a hext, max of 24.5%, and a half-life (T50) of 121 hours at initial luminance of 10,000 cd m-2, corresponding to 6,804 hours at 1,000 cd m-2 and 382,636 hours at 100 cd m-2, which are much better than the device with a commercialized ETM of DPPyA.


A (Room 211~213)

25 OLED Materials Engineering

Date: Aug. 30 (Thu.), 2018Time: 11:00~12:30Session Chair: Prof. Youngmin You (Ewha Womans Univ., Korea)

A25-3 11:50~12:15

Efficiency Engineering of Blue and Green OLEDs

Joachim Kaiser, Edgar Böhm, Tobias Großmann, Holger Heil, Dominik Joosten, Jun-Ho Kim, Rouven Linge, Aurelie Ludemann, Falk May, Christof Pflumm, Lara-Isabel Rodriguez, Philipp Stößel, and Frank Voges (Merck KGaA, Germany)

Luminance efficiency is one of the key performance parameters for OLED applications, having crucial impact on features such as power consumption, battery life, heat management, maximum panel brightness, resolution, and others. A lot of material and stack related mechanisms affecting efficiency have been extensively investigated by various groups, ranging from light outcoupling to effective energy transfer and exciton harvesting or optimized charge balance.In this talk, we introduce our latest material developments in emissive materials as well as transport materials for fluorescent blue and phosphorescent green vapor based OLEDs, with emphasis on understanding and improving luminance efficiency. We present several examples that illustrate how the various efficiency affecting mechanisms can be addressed by material design. From an emissive material development point of view, focus will be put on photoluminescence quantum yield and emitter orientation, whereas for the surrounding transporting layers confinement and charge balance are the most important aspects under consideration.

A25-4 12:15~12:30

Effect of Acceptor Moiety on the Emission Spectrum of Green Platinum Complex

Yukiko Iwasaki, Hirohiko Fukagawa, and Takahisa Shimizu (NHK Science & Tech. Research Lab., Japan)

Highly efficient, operationally stable and pure-color OLEDs are of great significance for practical wide-color-gamut displays. In recent years, an efficient pure green phosphorescent OLED (PHOLED) has been demonstrated by employing both a platinum complex and a top-emitting structure. Toward the development of pure green PHOLEDs with high operational stability, it is essential to clarify the effect of host materials on the emission spectrum of the platinum complex. This is because the emission spectrum of the platinum complex in a TADF material exhibits a considerably broad emission spectrum, although TADF materials have been reported to be suitable hosts for efficient and stable PHOLEDs. In this study, we investigated the origin of this spectral change by evaluating the photoluminescence of a platinum complex in several hosts with different moieties. These spectral changes are considered to be caused by exciplex formation between the host and the platinum complex, which is affected by the acceptor moiety of the host.


B (Room 214~216)

26 Photoluminescence Application of QDs

Date: Aug. 30 (Thu.), 2018Time: 11:00~12:05Session Chairs: Prof. Seong Jun Kang (Kyung Hee Univ., Korea)

Dr. Sohee Jeong (KIMM, Korea)

B26-1 11:00~11:25

Modification of Solution-Phase Ligand Exchange Methods for Infrared Colloidal Quantum Dot Photovoltaics

Jea Woong Jo (Dongguk Univ., Korea)

Colloidal quantum dots (CQDs) have attracted much attention as infrared photo-active materials for photovoltaic applications. Recently, high performance photovoltaic cells with power conversion efficiencies > 11% have been reported by introducing lead-halide passivated PbS CQDs. In photovoltaic applications, the long insulating ligands that are utilized for protecting CQD surface during the synthesis should be replaced with the conductive ligands that offer well-coupled quantum dot solids. Among several strategies, solution-phase ligand exchange has been recently considered as a promising way that could provide homogeneous and uniform passivation of CQD surfaces. However, to date, solution-phase ligand exchange has not been fully optimized and has still shown insufficient chemical reactions or undesirable side reactions, leading to reduced charge-transporting ability and increase of polydispersity in the finally deposited CQD films. In this study, new solution-phase ligand exchange methods are developed by introducing various chemical additives that can affect the reactivity of ligand exchange.

B26-2 11:25~11:50

Competitive Materials: Narrow Band Red Emitting LED Phosphors for Wide Color Gamut Displays

James Murphy (GE Global Research, USA), William Beers (GE Lighting, USA), Matthew Butts, Sam J. Camardello (GE Global Research, USA), Ashfaqul Chowdhury, William Cohen, Fangming Du (GE Lighting, USA), Jerry Liu (GE Global Research, USA), Clark Nelson (GE Lighting, USA), Gautam Parthasarathy, Robert Perry, and Anant A. Setlur (GE Global Research, USA)

Although the first commercial LED packages using GE RadiantRedTM technology, specifically the K2SiF6 :Mn4+ (KSF) phosphor, came more than a year after the commercial introduction of quantumdot LCD displays, packages using this red-line emitting LED phosphor (lmax = 631 nm) have penetrated the market at more than five times the rate of quantum dot displays. Over 20 billion LEDs containing GE RadiantRed technology have been sold, making this phosphor the red emitting luminescent material of choice for wide color gamut displays. Continual improvements in absorption, quantum efficiency and stability under high humidity and high light flux will be presented that have resulted incommercialization of this material as GE TriGainTM phosphors. Additionally, GE has developed new types of TriGain phosphor and will discuss progress on narrow band green phosphors that when combined with RadiantRED technology provide an on-chip, RoHS compliant package that reaches up to 95% rec2020.


B (Room 214~216)

26 Photoluminescence Application of QDs

Date: Aug. 30 (Thu.), 2018Time: 11:00~12:05Session Chairs: Prof. Seong Jun Kang (Kyung Hee Univ., Korea)

Dr. Sohee Jeong (KIMM, Korea)

B26-3 11:50~12:05

White OLED Display Prepared with the Wrinkled Silica-Quantum Dot Hybrid Nanoparticles Dispersed in Photoresist

Hyo-Jun Kim, Kiju Um, Ji-Hoon Kim, Hye-Bin Yang, Kangtaek Lee, and Young-Joo Kim (Yonsei Univ., Korea)

In previous research, we published a new approach to improve the optical efficiency of white OLED display by applying the patterned QD film dispersed in photoresist (PR) to downcovert the unnecessary light from white OLED to necessary light. However, the requirement of thin thickness (about 2 μm) even with high concentration (maximum 20 wt%) in the patterned QD film made it difficult to absorb all the unnecessay light from white OLED. In this study, we applied the wrinkled silica-QD hybrid nanoparticles (WSQs) to white OLED to increase the color conversion efficiency of QD film. WSQs were well dispersed in PR with high concentration (above 20 wt%) by modifying the surface of WSQs with glycidoxypropyl trimethoxysilane which is matched with PR. In addition, unique surface structure of WSQs scatters the light more efficiencyly compared to the spherical silica particles, resulting in the enhancement of color conversion efficiency of QD film.


C (Room 217)

27 Display Metrologies

Date: Aug. 30 (Thu.), 2018Time: 11:00~12:30Session Chairs: Prof. Youngshin Kwak (UNIST, Korea)

Dr. Don Gyou Lee (LG Display Co., Ltd., Korea)

C27-1 11:00~11:25

Display Quality Control Using New Real-Time Spectral Viewing Angle Measurement System

Thierry Leroux and Pierre Boher (ELDIM, France)

Last generation of displays has reached very high optical quality thanks to new display technologies as well as very strict control of the quality during the manufacturing process. In parallel, requirements on the measurement instruments have increased drastically in terms of accuracy and speed. In addition luminance and color are now no more sufficient and spectral measurements become mandatory. A new real time spectral instrument that measures the viewing angle along one azimuth with high angular and spectral resolution is introduced. Its patented optical configuration uses a transmission grating integrated inside the optical Fourier transform system allowing simultaneous angular and spectral detection in one image. One slit on the first Fourier plane selects light coming from one azimuth that is diffracted using a transmission grating on the iris used to define the spot size on the display. The system is small and can be easily rotated to measure several azimuths or the entire angular aperture rapidly.

C27-2 11:25~11:50

Display Metrology Methodology of the Early 21st Century

Joe Miseli (JVM Research, USA)

Talks about how metrology was done in the late 20th century, and addresses how modern displays, with more sophisticated, and greater performance capabilities require different and more advanced methods to analyze that performance.


C (Room 217)

27 Display Metrologies

Date: Aug. 30 (Thu.), 2018Time: 11:00~12:30Session Chairs: Prof. Youngshin Kwak (UNIST, Korea)

Dr. Don Gyou Lee (LG Display Co., Ltd., Korea)

C27-3 11:50~12:15

Color Gamut Volume Metric with Overlap and Viewing Direction under 8 Point Measurement

Kyung Jin Kang (LG Electronics Inc., Korea)

When we want to evaluate the display color capability by color gamut volume, the overlap color gamut volume comparing with the standard gamut volume is also helpful to evaluate the accurate color reproduction. But, the real measurement data over the surface of 3D color gamut is hard to be estimated for the overlap volume. And, when we try to get the directional color gamut volume for the directional color properties especially in case of transmissive display such as LCD, it might take long time due to so many measurement times for all directions. Therefore, we can use the 8 point measurement and interpolate to estimate the intermediate data. It is also useful in multi-primary displays such as RGBW and RGBY as well as conventional RGB display. The color gamut volume is calculated based on CIELAB color space according to the definition in CIE 168 where the L*ab in each directional measurement can be gotten by using each directional white for the directional color gamut volume.

C27-4 12:15~12:30

Sound Quality Evaluation of OLED Panel Speaker

Jung Sub Hwang, Sun Ho Park, and Jang Jin Yoo (LG Display Co., Ltd., Korea)

The latest TV products have ultra thin and bezelless design, in this case the speakers will be set behind the panel. This hidden speaker affect seriously degradation to sound quality and viewing experience. Recently, in order to solve these problems, Crystal Sound OLED (CSO) have been developed that vibrate the thin OLED panel itself to make a sound on the viewing screen.sound played on the center of panel not only increase sound quality, but also keeps the TV design thin. In this study, it was confirmed that the level of perceptual sound quality through subjective evaluation based on the difference between position and radiation direction of TV speaker. As a result, Sound quality of TV was critically affected by position and radiation direction of the speaker and the CSO which directly played sound on the panel was evaluated as the most preferred.


D (Room 218)

28 Micro LEDs II

Date: Aug. 30 (Thu.), 2018Time: 11:00~12:30Session Chair: Prof. Keon-Jae Lee (KAIST, Korea)

D28-1 11:00~11:25

Flexible MicroLED for Displays and Biomedical Applications

Keon Jae Lee (KAIST, Korea)

With the emergence of IoT era, visual IoT platforms have attracted significant interest, which can offer collecting, and processing of optical information. Flexible displays are a potential candidate for visual communication, as they can be affixed anywhere. Inorganic LEDs have superior characteristics, compared to OLED. However, due to the brittle property of inorganics, III-V LED limits its applications for flexible electronics. This seminar introduces the flexible vertical microLED on plastics. The superb properties of inorganic LED enable the extension of flexible displays toward wearable devices of light source and full color flexible micoLED displays. MicroLED stimulation of neurons is one of reliable methods in neuroscience for deduction of functional movement, complex behavior and long-range connectivity. Advanced biomedical tools employ flexible optoelectronic devices with optogenetic models to activate small functional regions. Here we introduce flexible vertical light-emitting diodes (VLEDs) for 2D perturbation of mouse cortex, stimulating neurons below layer III from brain surface. Operation of red light from f-VLEDs induces mouse movements and synchronized EMG signals.

D28-2 11:25~11:50

Micro-LEDs for Marco-Displays

Zhaojun Liu, Ke Zhang (Southern Univ. of Science and Tech., China), Chengfeng Qiu, Kei May Lau, Hoi Sing Kwok (HKUST, Hong Kong), and Xiaowei Sun (Southern Univ. of Science and Tech., China)

High pixel per inch (PPI) and high resolution Micro-LED displays are attracting more and more attentions. Many groups reported their work of the design, fabrication, full color realization, mass transferring, and system integration. In this talk, we are going to review the design considerations, fabrication, transfer bonding, and active matrix driving schemes of Micro-LEDs and share our thoughts about how to make better Micro-LEDs and the its applications for displays and beyond. We will also discuss the full-color realization and Micro-LEDs on flexible & transparent substrates.


D (Room 218)

28 Micro LEDs II

Date: Aug. 30 (Thu.), 2018Time: 11:00~12:30Session Chair: Prof. Keon-Jae Lee (KAIST, Korea)

D28-3 11:50~12:15

Micro-LED Integrated Bioelectronics: Enabling Tools to Engage Biological Systems Using Light

Jae-Woong Jeong (KAIST, Korea)

Recent research and development have established materials and manufacturing foundations for microscale light emitting diodes (micro-LEDs) with high performance and high efficiency. The tiny optoelectronics can be seamlessly printed onto thin, elastic membranes to form soft, flexible and stretchable electronics, which can conformally interface with complex 3-D shape of biological organs to engage biological systems using light. This new class of soft bioelectronics enable intimate, non-invasive integration of light sensors and actuators, directly with human body, in ways that are impossible with conventional, hard, planar device technologies. This is an enabling technology that can bring current light-based medical technologies to outside of the lab and the hospital for ubiquitous health monitoring and disease therapy. This talk discusses the concepts and the engineering designs of the micro-LED integrated bioelectronics, and introduces our research on tissue conformal optoelectronics for physiological monitoring and soft optofluidic neural probes for brain circuit manipulation as respective representative examples of wearable and implantable applications.

D28-4 12:15~12:30

Study on Flip-Chip AlGaInP Red LEDs for Micro LED Applications

Ray-Hua Horng (Nat'l Chiao Tung Univ., Taiwan), Yu-Tin Tsaiand, and Dong-Sing Wuu (Nat'l Chung Hsing Univ., Taiwan)

In this work, FCLEDs with three types of n-GaAs area are discussed. FCLEDs with 17.7% n-GaAs area have lower current density compared with FCLEDs with 9.8% n-GaAs area and have lower n-GaAs area which can absorb output power compared with FCLEDs with 100% n-GaAs area. With the same 17.7% n-GaAs area, two types of arrangement of n-GaAs including 9 circles with a diameter of 20 um and 25 circles with a diameter of 16 um are discussed. The output power of FCLED with 100% n-GaAs area is 2.08 mW (@5 mA). The output power of FCLED with Ag mirror and 17.7% n-GaAs area 9 circles n-GaA pattern is 2.38 mW and is 2.69 mW after packaged. The FCLED output power can be improved from 2.08 mW to 2.69 mW and WPE can be improved from 22.1% to 28.0% by n-GaAs etching and changing mirror.


E (Room 311~312)


















(Sigmaintell)



16:00~17:30


(SCHOTT)




F (Room 313)

30 Young Leaders Conference I

Date: Aug. 30 (Thu.), 2018Time: 11:00~12:40Session Chair: Dr. Jeong-Ik Lee (ETRI, Korea)

F30-1 11:00~11:25

Physical Decoupling of Charge Transport and Injection in Organic Transistors

Chang-Hyun Kim (Gachon Univ., Korea) and J. Emyr Macdonald (Cardiff Univ., UK)

In this presentation, we will introduce new approaches toward closed-form current-voltage models for a wider applicability, focusing on the interdependency between charge-carrier mobility and contact resistance, and its effect on transistor behaviors. Validity of the model is confirmed by measurements on high-performance small-molecule OFET devices.

F30-2 11:25~11:50

Stretchable Ionics – A Promising Candidate for Oncoming Wearable Devices

Jeong-Yun Sun (Seoul Nat'l Univ., Korea)

As many devices for human utility target fast and convenient communications with users, superb electronic devices have been demonstrated as hardware for Human-Machine Interface (HMI) in wearable forms. Wearable devices for daily health-cares and self-diagnosis desire more human-like properties unconstrained to deformation. In this sense, stretchable ionics based on flexible and stretchable hydrogels is on the rise as another field to develop wearable devices for bio-applications due to two major reasons; i) ionic currents, choosing the same signal carriers with biological areas, and ii) the adoption of hydrogel ionic conductors which are intrinsically stretchable materials with bio-compatibility. Here, forte and current status of stretchable ionics as well as future applications whose positive effects can be magnified by stretchable ionics are going to be introduced.


F (Room 313)

30 Young Leaders Conference I

Date: Aug. 30 (Thu.), 2018Time: 11:00~12:40Session Chair: Dr. Jeong-Ik Lee (ETRI, Korea)

F30-3 11:50~12:15

Perovskite Thin Film Transistors

Farjana Haque, Nhu Hoang, Jin Jang, and Mallory Mativenga (Kyung Hee Univ., Korea)

Owing to the compelling combination of simple low-cost processing and high electrical performance, hybrid organic-inorganic perovskite semiconductors have become probably the most celebrated material for theoretical and experimental research in photovoltaic and optoelectronic device applications. However, applications in thin film transistors (TFTs) have been limited, mainly due to their unique morphology, where dislocated crystalline grains inhibit lateral current flow. This talk will discuss effective ways of applying organic-inorganic hybrid perovskite materials in TFTs on glass for display applications. In particular, ways of achieving polycrystalline films with continuous grain-to-grain connections will be discussed. It should be noted that good grain-to-grain connection is necessary for high TFT lateral channel conductivity, in contrast with the vertical conductivity in most photovoltaic applications. The presentation will also cover electrical properties of perovskite TFTs with the inverted coplanar structure on glass substrates.

F30-4 12:15~12:40

High Performance Thin-Film Transistors Based on Advanced Materials for Next-Generation Displays

Tae-Jun Ha (Kwangwoon Univ., Korea)

The potential of solution-processable thin-film transistors (TFTs) has been intensively explored to open up a new route for next-generation displays requiring low-cost fabrication in large-area. Such TFTs based on advanced semiconducting materials as an active channel such as donor-acceptor copolymer, single-wall carbon nanotube, and amorphous metal-oxide semiconductor, have exhibited excellent device performance [1-3]. In this presentation, we will focus on challenges and opportunities for solution-processable TFTs based on advanced materials for next-generation displays. Promising approaches to realize highly stable and robust TFTs fabricated at low temperature will be discussed [4]. We will also demonstrate charge transport study in TFTs based on advanced materials and investigate a transport model. Whereas quasi-DC experiments provide only a partial picture of charge transport and device physics in high mobility TFTs, our NQS measurements allow time-resolved charge transport studies including the computation of carrier velocity distributions [5].


G (Room 314~315)

31 Organic Transistors II

Date: Aug. 30 (Thu.), 2018Time: 11:00~12:30Session Chair: Dr. Yutaka Wakayama (NIMS, Japan)

G31-1 11:00~11:25

Imide-Functionalized Organic Semiconductors for High- Performance N-Type Thin-Film Transistors

Xugang Guo (Southern Univ. of Science and Tech., China)

A series of novel ladder-type imide-functionalized bithiophenes BTIs up to 5 imide groups are synthesized and characterized, their resulting acceptor-acceptor type homopolymers show tunable FMO energy levels and film morphologies. An imide-functionalized thiazole DTzTI is also developed, which enables access of acceptor-acceptor homopolymer. The homopolymers exhibit unipolar n-type transport characteristics in organic thin-film transistors with the highest electron mobility > 3 cm2V-1s-1. Notably, all homopolymers do not show undesirable kink in transfer curves, thus avoiding mobility overestimation. The deep-lying FMO levels lead to greatly suppressed Ions of 10-10-10-11 A and remarkable Ion/Ioffs of 107- 108 in transistors, which greatly differ from the OTFT performance parameters of most high-performance n-type polymers reported to date. Besides the acceptor-acceptor homopolymers, these novel imide-functionalized arenes are used to construct donor-acceptor and donor-acceptor-acceptor type copolymers, which also show unipolar n-type transistor characteristics with remarkable electron mobility approaching 3 cm2V-1s-1 in transistors.

G31-2 11:25~11:50

OFET: Enhanced Performance for Flexible Displays

Jochen Brill and Peter Erk (BASF SE, Germany)

The display industry is moving towards flexible displays to offer new features like lightweight, unbreakable and eventually rollable or even foldable displays for the user. The existing backplane Technologies are not yet compatible with commonly available plastic substrates. The alternative is to use Organic Thin-Film Transistors (OTFT), which can be processed at much lower temperatures, e.g. below 120 ƃ and are therefore compatible with plastic substrates like PET or PEN. Furthermore, organic materials match with additional properties, e.g. the coefficients of thermal expansion or Youngs modulus, to make the dream of truly flexible devices come true. BASF is developing all materials needed for a full stack OTFT including the organic semiconductors, dielectrics, contact treatments and interlayer dielectric as well as planarization materials. The material sets shown so far are capable to drive EPD and LCD displays [4,5]. In this presentation we will introduce our recent achievements towards the direction of OLED backplanes and discuss the future development.


G (Room 314~315)

31 Organic Transistors II

Date: Aug. 30 (Thu.), 2018Time: 11:00~12:30Session Chair: Dr. Yutaka Wakayama (NIMS, Japan)

G31-3 11:50~12:15

Correlation of Molecule Structures and Charge Transport Properties in N-Channel Organic Field-Effect Transistors

Yuanyuan Hu (Hunan Univ., China)

Understanding the relationship between molecular structure and charge transport is critical to the development of high-performance organic devices. In this work, we investigated the structure-property correlation by finely tuning the molecule structure of organic semiconductors and comparing the performance of TFT devices, aiming to deepen our knowledge of the structure-property relationship and to provide guidance for optimizing the synthesis of high-mobility organic semiconductors. Through systematic studies, we have clarified how the alkyl-chain length, symmetry and the length of donor units influence charge transport in organic semiconductors.

G31-4 12:15~12:30

Role of Fluoroalkyl Side-Chain of DPP-BTZ Copolymer on Charge Transport Properties

Do Hyeon Jeong (Pukyung Nat'l Univ., Korea), Seok-Heon Jung, Jin-Kyun Lee (Inha Univ., Korea), and Ji Youl Lee (Pukyung Nat'l Univ., Korea)

In this presentation, the study on a newly-synthesized novel dithienyl-DPP based polymer obtained by copolymerization with the weakly electron-deficient benzotriazole (BTZ) monomers will be discussed [3]. In particular, unlike the conventional doping method in which an interstitial small-molecule based dopants were added by thermal deposition, a method of introducing a side-alkyl chain containing fluorine, which is an electrophilic element, into a DPP-BTZ backbone will be introduced. For this purpose, we prepared four kinds of DPP-BTZ semiconducting copolymers with different ratios of alkyl side-chain to fluoroalkyl side-chain (i.e. alkyl chains:fluoroalkyl chains = 3:7, 5:5, 7:3 and 10:0, respectively). The preliminary results reveal that the mobility of DPP-BTZ semiconducting copolymer films is increased as the ratio of fluoroalkyl side-chain is decreased.


H (Room 316~317)

32 Innovative 3D Displays I

Date: Aug. 30 (Thu.), 2018Time: 11:00~12:45Session Chair: Dr. Youngmin Kim (KETI, Korea)

H32-1 11:00~11:25

Tabletop 3D Displays with Mixture of Virtuality and Reality Based on Integral Imaging

Han-Le Zhang, Huan Deng, Min-Yang He, and Qiong-Hua Wang (Sichuan Univ., China)

We propose two tabletop 3D display systems with mixture of virtuality and reality based on integral imaging (II). In the first system, the microlens array HOE records the wavefronts of the tilted spherical waves. In the reconstruction, an elemental image array is projected by a projector. A 3D image is generated by the tilting spherical waves in an oblique viewing angle, which presents the tabletop 3D feature. In the second system, the multiplexed HOE (MHOE) has the function of two sets of micro-lens arrays, and it is recorded by a reference beam using the single-exposure method. The reference beam records the wavefronts of a micro-lens array from two different directions. When the display beam is projected on the MHOE, two wavefronts with different directions is rebuilt and the 3D virtual images is reconstructed, which presents the dual-view-zone tabletop 3D feature.

H32-2 11:25~11:50

Innovation of Real 3D Display and Augmented Reality in Biomedical Engineering

Hongen Liao (Tsinghua Univ., China)

Real three-dimensional (3D) display and augmented reality play a fast-growing role in biomedical applications to enhance human vision, recognition and learning. We have developed an autostereoscopic 3D medical image display method called integral videography with a full parallax. In high-quality, large viewing angle and high-accuracy 3D image generation, we design a novel optical image enhancement, image-compensated rendering method and super-multiview rendering pipeline. Secondly, we design a 3D augmented reality system that enables observers to see the virtual images merged in the real scene and solve the hand-eye discoordination in medical operations. With real-time tracking, the 3D images are directly overlaid on the real object with very high geometrical accuracy. In the research of next-generation 3D display, we develop a super long viewing distance light homogeneous emitting display method based on MEMS scanning mechanism, making it the first to exhibit animated 3D images with image depth of more than six meters.


H (Room 316~317)



H32-3 11:50~12:15

Hidden Stereo: Hiding Phase-Based Stereo Disparity for Ghost-Free Viewing without Glasses

Taiki Fukiage, Takahiro Kawabe, and Shin’ya Nishida (NTT Communication Science Lab., Japan)

When a conventional stereoscopic display is viewed without 3D glasses, image blurs, or ghosts, are visible due to the fusion of stereo image pairs on the screen. This artifact severely degrades 2D image quality, making it difficult to simultaneously present clear 2D and 3D contents. To overcome this limitation, we have recently proposed a method to synthesize ghost-free stereoscopic images. Our method gives binocular disparity to a 2D image by the addition of a disparity-inducer pattern. The disparity-inducer patterns added to the left and right images are identical except for the contrast polarity. Thus, the fusion of the two images cancels out the disparity-inducer components and makes only the original 2D pattern visible to viewers without glasses.

H32-4 12:15~12:30

Self-Interference Incoherent Digital Holography Using Geometric Phase Effect

Kihong Choi, Junkyu Yim, and Sung-Wook Min (Kyung Hee Univ., Korea)

The self-interference incoherent digital holography using geometric phase effect is presented. The geometric phase lens is utilized as a self-interferometer inside the holographic recording system. And by collaborating with the geometric phase lens and a rotating polarizer, the geometric phase shifter is achieved. The only optical components to achieve the Fresnel on-axis holography are the two polarizers, geometric phase lens, objective lens and the image sensor. The total optical path length required in the system is within 4 cm, which is remarkably compact among the reported holographic recording systems, to the best of our knowledge. Any prior knowledge is not required to reconstruct the object information. The proposed system is expected to utilize as a portable holographic camera.


H (Room 316~317)



H32-5 12:30~12:45

Dynamic Control Holographic Display System with Integral Imaging Pickup

Yan-Ling Piao, Ki-Chul Kwon, Nyamsuren Darkhanbaatar (Chungbuk Nat'l Univ., Korea), Jong-Rae Jeong (Suwon Science College, Korea), and Nam Kim (Chungbuk Nat'l Univ., Korea)

In this study, we proposed a full-color dynamic controlling holographic display system of a real-existing scene by camera which is captured the real object through lens-array. the integral image will be used for generate orthographic projection images. Finally, dynamic control (mouse, display etc.) will be used in the orthographic projection images-based hologram generation.


A (Room 211~213)

33 OLED Optics

Date: Aug. 30 (Thu.), 2018Time: 15:50~16:55Session Chair: Prof. Yun-Hi Kim (Gyeongsang Nat'l Univ., Korea)

A33-1 15:50~16:15

Importance of Low Refractive Index Media for Ultimate Efficiency in OLEDs

Seunghyup Yoo, Jaeho Lee, and Jinouk Song (KAIST, Korea)

The efficiency of OLEDs is often limited by various loss channels such as excitation of waveguided modes or surface plasmon polariton (SPP) modes. Hence it is important to develop a methodology that prevents excitation of these modes for ultimate efficiency in OLEDs. Here we first focus on the fact that PEDOT:PSS - the most commonly used conducting polymer in organic electronics - has a refractive index lower than most organic semiconductors and study on how to utilize such properties to improve the performance of OLEDs. We then move to low-index transport layers and demonstrate OLEDs made thereof, exhibiting a very high external quantum efficiency. Detailed mechanisms are elucidated by the full wave-optic analysis that takes into account dipole orientation, Purcell factor, and excitations to SPP modes.

A33-2 16:15~16:40

Emitter Orientation vs. Host Birefringence for OLED Optimization

Norbert Danz (Fraunhofer IOF, Germany), Nils Haase, Antonia Morherr, Christof Pflumm (Merck KGaA, Germany), and Dirk Michaelis (Fraunhofer IOF, Germany)

Spontaneously aligning emitter molecules can improve the efficiency and brightness of OLED devices. Any birefringence of the host affects the apparent emitter orientation, similar to emitter orientation. Co-evaporating Ir(ppy)3 into hosts with qualitatively different birefringence properties and quantitatively analyzing the electroluminescence emission patterns reveals the apparent emitter orientation. The results illustrate the device optimization potential when utilizing emitting layers with appropriate birefringence properties, because birefringence can be used to suppress perpendicular emitter contributions while amplifying the impact of the horizontal dipoles.


A (Room 211~213)

33 OLED Optics

Date: Aug. 30 (Thu.), 2018Time: 15:50~16:55 Session Chair: Prof. Yun-Hi Kim (Gyeongsang Nat'l Univ., Korea)

A33-3 16:40~16:55

Dipole Orientation Measurement Method for Organic Semiconductor Material Based on Effective Exciton Decay Rate

Ik Jang Ko, Ji Eun Yeom, Subin Lee, Min-Geun Song and Jang Hyuk Kwon (Kyung Hee Univ., Korea)

In this study, we report a new dipole orientation measurement method of organic semiconductor by simply investigating photoluminescence exciton decay rate (k*) variation in the organic and metal electrode stacked film. The k* of thin organic film with electrode is influenced by the dipole orientation and distance between exciton and electrode. The energy of vertical exciton dipole more strongly transferred to the surface plasmon resulting in enhanced surface plasmon-dipole coupling. Because these surface plasmon-dipole coupling in a resonant cavity environment can be analyzed by optical modeling, anisotropic orientation factor of exciton dipole could be calculated from the vibration of k*. Dipole orientation of phosphorescence, florescence and even thermally activated delayed fluorescence are able to obtained using measured k* and optical analysis. As their investigated anisotropic dipole orientation were very similar to those of previous reports, our measurement method is very simple, universal and reliable to measure the dipole orientation any organic materials.


B (Room 214~216)

34 Transparent/Flexible Displays (OLED)

Date: Aug. 30 (Thu.), 2018Time: 15:50~17:20Session Chairs: Dr. Joosun Yoon (Samsung Display Co., Ltd., Korea)

Dr. Martin Rosenblum (Vitriflex, USA)

B34-1 15:50~16:15

Recent Advances in Highly Flexible and Transparent OLED Devices for Signage Applications

Pavel Kudlacek, Raghu Pendyala, Pradeep Panditha, Ahmed Salem, Suzanne de Winter, Peter van de Weijer, Piet C. P. Bouten, Hylke Akkerman, and Paul Poodt (Holst Centre TNO, Netherlands)

Holst Centre has long history in development of technologies for flexible and transparent OLEDs for signage applications. In our contribution we will report on recent advances in development of firstly, highly flexible (<1 mm bending radius), transparent, thin film encapsulation for OLED applications and secondly a highly transparent OLED cathode enabling truly transparent OLED devices with 80% transparency. Recently, Holst Centre has teamed up with other OLED technology leaders in Europe (Fraunhofer FEP, VTT and CPI), launching a pilot production line for flexible OLEDs that operates under a brand-named Lyteus. In our contribution we will also briefly address challenges connected to bringing the abovementioned technologies on a pilot production scale.

B34-2 16:15~16:40

Ink Jet Application in Thin Film Encapsulation of Flexible Displays

Lorenza Moro, Chris Hauf, June Zhang, and Jeff Hebb (Kateeva, Inc., USA)

Thin film encapsulation (TFE) has been critical in the commercial deployment of OLED displays for mobile applications. The TFE common structure is 3-layer inorganic/organic/inorganic stack where the inorganic layers are film of SiNx deposited by plasma enhanced chemical vapor deposition (PECVD) and an organic deposited by ink jet print (IJP). Kateevas ink-jet printers and printing technology allow the deposition of mura-free polymer films in mass production (MP). In this paper, IJ deposition technology will be presented and discussed in the contest of current and future applications to flexible and foldable displays.


B (Room 214~216)

34 Transparent/Flexible Displays (OLED)

Date: Aug. 30 (Thu.), 2018Time: 15:50~17:20Session Chairs: Dr. Joosun Yoon (Samsung Display Co., Ltd., Korea)

Dr. Martin Rosenblum (Vitriflex, USA)

B34-3 16:40~17:05

Opportunities and Challenges of Flexible AMOLED Industry

Jianping Chen, Guizhou Qiao, Weiguo Li, and Shengzu Zhu (Visionox, China)

Recently, flexible AMOLED display has attracted a quite attention, owing to OLEDs inherent flexibility that LCD display cant match. To better realize flexible AMOLED display application, for examples, in flexible smartphone and flexible tablet, there is a need to develop the corresponding flexible touch sensor technology. In this presentation, we will review key technical requirements for flexible touch sensor, including the choice of transparent conductive films, patterning process, folding ability, etc., and will present our latest development on flexible and foldable touch sensors, that possess the following characteristics, the out-folding ability of 100,000 times at a coverture of 3 mm, touch accuracy, touch sensitivity, and touch linearity. And moreover, we will present the results of the touch sensor-integrated flexible and foldable AMOLED display.

B34-4 17:05~17:20

Novel Cathode Materials for OLED Displays

Michael Helander, Zhibin Wang, Jacky Qiu, Yi-lu Chang, and Qi Wang (OTI Lumionics Inc., Canada)

Display blue shift and lifetime are key problems shown with the recent OLED display product introductions, particularly for larger size RGB panels. These problems and the inherent issue of IR drop can be solved with novel cathode materials and processes. New cathode materials with better device performance and substantially lower processing temperature, allowing for higher uniformity, will be discussed, along with solutions to the IR drop problem in large area RGB panels.


C (Room 217)

35 High Resolution Driving Technologies

Date: Aug. 30 (Thu.), 2018Time: 15:50~17:10 Session Chairs: Prof. Suk-Ju Kang (Sogang Univ., Korea)

Prof. Hojin Lee (Soongsil Univ., Korea)

C35-1 15:50~16:15

Atomized Scan Strategy for High Frame Rate and Definition OLED Microdisplay

Wendong Chen, Shuping Huang, and Yuan Ji (Shanghai Univ., Korea)

The purpose of the atomized scan is to achieve the well balance between the transmission efficiency and the linear weights. First, we find a low order gray-level scan matrix Q[m] with the transmission efficiency of 100%. This scan matrix is defined as the abstract atomized scan matrix. It can be implanted in another higher order gray-level scan matrix Q[m,n]. The implantation process of the atomized scan follows the linear optimization rule and the implantable rule of the scan weight sequences. Through the implantation operation, we can obtain the higher gray level, higher transmission efficiency, and better linear scan sequence Q. Figure 1 shows an eight bit gray example of atomized scan a demo device of the head mounted virtual reality. It uses two digital drive silicon-based OLED microdisplays that adopts the atomized scan strategy.

C35-2 16:15~16:30

5.36" 10K6K 2250 ppi Display

Hyun Sup Lee, Sang Hee Jang, Hyun Gil Jeon, Byung-Seok Choi, Seong Heon Cho, Won Tae Kim, Keun Kyu Song, Hye Yong Chu, Sung-Chan Jo, and Jin Oh Kwag (Samsung Display Co., Ltd., Korea)

We have developed a large-area ultra high density display (5.3610 K, 2250 ppi, RGB type) with the glass-based process technology. A new pixel architecture has been devised to integrate TFTs, contact holes, and data / gate lines in the smallest pixel pitch ever reported on glass. A new driver system including a new IC design has also been developed for this 10K resolution display. We envision a wide application of this technology in areas such as holographic displays, VR, and AR.


C (Room 217)

35 High Resolution Driving Technologies

Date: Aug. 30 (Thu.), 2018Time: 15:50~17:10 Session Chairs: Prof. Suk-Ju Kang (Sogang Univ., Korea)

Prof. Hojin Lee (Soongsil Univ., Korea)

C35-3 16:30~16:55

HVS Model-Based Tone Mapping Technique for Displaying HDR10 Contents

Nam Hoang Nguyen, Tu Van Vo, and Chul Lee (Pukyung Nat'l Univ., Korea)

The market for ultra-high-definition (UHD) TVs has been rapidly expanding due to the recent expansion of high-definition content produced and UHD broadcasting. UHD broadcasting supports high dynamic range (HDR) image content, which can represent a wider dynamic range than standard dynamic range (SDR) content for a more realistic experience. However, an SDR TV can display contents with lower dynamic range than that defined in HDR10. Moreover, as the peak luminance represented by each device is different, TVs that support HDR10 contents display them differently. Therefore, when HDR10 content is displayed on the SDR device or when the maximum luminance values of the HDR content and the display are different, a process of converting the dynamic range of the input HDR content, called tone mapping, is required. In this work, we propose a human visual system (HVS) model-based tone mapping technique for displaying HDR10 content to maintain the perceptual quality of the input content.

C35-4 16:55~17:10

Scan Driver Circuit Using Q Node as a Pull-Down Unit Structure

Jong Su Oh, Jin-Ho Kim, Jae Moon Kim, Kyung-Mo Jung (Sungkyunkwan Univ., Korea), Kee Chan Park (Konkuk Univ., Korea), Jae-Hong Jeon (Korea Aerospace Univ., Korea), and Yong-Sang Kim (Sungkyunkwan Univ., Korea)

We propose a new type scan driver circuit using Q node as a pull-down unit. In general, since the QB node voltage is always charged to discharge the Q node except for VOUT output timing, gate bias stress is constantly applied to the pull-down unit. This is directly affects the stability of the circuit. To solve this problem, we proposed circuit that the Q node can play the role of pull-up and pull-down unit together. However, the VH of Q node that can discharge VOUT node has only 33.3 % duty ratio on the basis of 1 frame period. Therefore, the Q node cannot completely discharge the VOUT node during 1 frame period. So, we designed additional circuit schematic composed of T3, T6, and C2. It forms additional circuit structure called by B node, which can control ripple with 66.7 % duty ratio. As a result, proposed circuit can always control VOUT ripple during 1 frame period except for VOUT VH timing.


D (Room 218)

36 LC Optical Components

Date: Aug. 30 (Thu.), 2018Time: 15:50~17:20Session Chairs: Dr. Hyunseok Choi (Samsung Electronics Co., Ltd., Korea)

Dr. Fumito Araoka (RIKEN, Japan)

D36-1 15:50~16:15

Optically Addressed Liquid Crystal Spatial Light Modulator

Peng Chen, Bing-Yan Wei, and Wei Hu (Nanjing Univ., China)

I'll present an optically addressed liquid crystal spatial light modulator that enables the accurate, arbitrary and reconfigurable azimuthal angle control of LCs. It supplies a powerful approach for the manipulation of light and brings new possibilities for the design of novel advanced liquid crystal photonic devices.

D36-2 16:15~16:40

Transparent Holographic Optical Element with Visible Playback Using Cholesteric Liquid Crystals

Hiroyuki Yoshida, SeongYong Cho, Masaru Ono, and Masanori Ozaki (Osaka Univ., Japan)

Cholesteric LCs with patterned orientation on the substrate can act as holographic optical elements whereby the phase of light reflected from the cholesteric LC is phase modulated according to the imprinted orientation distribution. Here, we demonstrate a holographic optical element that looks transparent under ambient light by exploiting the characteristic property of cholesteric LCs that high-order reflections are suppressed. We also show that the device can be played back by visible light by using an auxiliary prism to access the blue-shifted reflection band in the visible region.

D36-3 16:40~17:05

Ultra-Large Field-of-View Retinal Projection Display with Corrective Lens

Wenbo Zhang, Chao Ping Chen, Lantian Mi, Yifan Lu, Weiqian Guo, Yang Li, Bing Yu, and Nizamuddin Maitlo (Shanghai Jiao Tong Univ., China)

We propose a retinal projection display that is able to merge with the vision correction for myopia. Our solution is highlighted by a corrective lens coated with an array of tiled organic light-emitting diodes, and a transmissive spatial light modulator. Its design rules are set forth in detail, followed by the results and discussion regarding the field of view, modulation transfer function, contrast ratio, distortion, and simulated imaging.


D (Room 218)

36 LC Optical Components

Date: Aug. 30 (Thu.), 2018Time: 15:50~17:20 Session Chairs: Dr. Hyunseok Choi (Samsung Electronics Co., Ltd., Korea)

Dr. Fumito Araoka (RIKEN, Japan)

D36-4 17:05~17:20

Bistable Smectic-A Phase Grating Cell Switchable Between Haze-Free Transparent and High-Haze Translucent States

Jae-Won Huh, Tae-Hoon Choi, Jeong-Ho Seo, Jin-Hun Kim, Jae-Hyeon Woo, and Tae-Hoon Yoon (Pusan Nat'l Univ., Korea)

We demonstrate bistable switching of a smectic-A LC (SmA-LC) phase grating device. To control the phase difference electrically in an LC cell, interdigitated electrodes can be formed on both the top and bottom substrates. The diffracted light intensity of this device can be controlled by not only the magnitude but also the duration of the applied voltage wave. Owing to the high viscosity of SmA-LCs, this device can maintain its state after the applied electric field is removed. We have shown that 98.1% of the incident light can be transferred from the zeroth to higher orders. Owing to the high diffraction efficiency, a fabricated LC cell can provide a high-haze (~92.2%) translucent state. Moreover, it can provide a haze-free transparent state because it does not contain any polymer structure.


E (Room 311~312)


















(Sigmaintell)



16:00~17:30


(SCHOTT)




F (Room 313)

38 Young Leaders Conference II

Date: Aug. 30 (Thu.), 2018Time: 15:50~17:05Session Chair: Prof. Hyun Jae Kim (Yonsei Univ., Korea)

F38-1 15:50~16:05

Organic Phototransistors with NIR-Sensing Conjugated Polymers: Flexible Sensors for Innovative Displays

Hyemi Han, Chulyeon Lee, Hwajeong Kim, and Youngkyoo Kim (Kyungpook Nat'l Univ., Korea)

Organic photodetectors have recently attracted keen interest because they are able to play as a flexible/bendable image sensor in the fast-growing electronics era. In particular, organic phototransistors (OPTRs) have been spotlighted due to their advantages including effective signal amplification and active matrix driving characteristics. Lightweight and wearable OPTRs are expected to make a paradigm shift in optical sensors and vision systems for various innovative devices including displays. Our group has attempted to develop flexible OPTRs that can stably detect photons in the range of near infrared (NIR), in order to promote the application windows of OPTRs. Very recently, we have proposed new concept for NIR-sensing OPTRs because conventional OPTRs have been very limited in terms of choosing organic materials for the NIR detection. This presentation will show our recent research results on various types of interesting OPTRs with the NIR-sensing conjugated polymers and discuss their future applications for innovative displays.

F38-2 16:05~16:20

FPGA-Optimized Image Super-Resolution for Virtual Reality Using Deep Learning

Jung-Woo Chang, Keon-Woo Kang, and Suk-Ju Kang (Sogang Univ., Korea)

This paper proposes a hardware-optimized super-resolution (SR) system that generates ultra-high-definition (UHD) images in real time on a panel for virtual reality (VR) devices through deep learning.


F (Room 313)



F38-3 16:20~16:35

Ultra-High Definition Full Color Top Emitting Organic Light Emitting Diode Structure with Higher Efficiency

Jun Hee Han, Dohong Kim, Tae-Woo Lee, Ho Seung Lee, and Kyung Cheol Choi (KAIST, Korea)

Ultra-high definition organic light emitting diodes have been studied for advanced displays such as virtual reality and micro-displays. In the case of organic light emitting diodes, a fine metal mask is used for pixel discrimination, but improvement of display definition has a limitation through this method. In this paper, advanced structure and fabrication method for top emission full colored ultra-high definition organic light emitting diodes is suggested. With the proposed structure and fabrication method, various shaped nanometer scale pixels can be expected, thereby realizing an ultra-high definition display. Furthermore, enhanced optical efficiency was observed when suggested device structure was applied. The structure includes pattern available multifunctional conductive optical film that works simultaneously as an electrode, optical efficiency enhancer, and a color converter. The method in this paper offers convenience in terms of the fabrication step and it can allow a more compact UHD device structure with higher efficiency.

F38-4 16:35~16:50

Revealing the Origin of Orientation of Ir Complexes Doped in Organic Semiconducting Layers

Chang-Ki Moon, Kwon-Hyeon Kim, and Jang-Joo Kim (Seoul Nat'l Univ., Korea)

In organic light-emitting diodes (OLEDs), the molecular orientation of emitter embedded in the emissive layer has been an issue to enhance the outcoupling efficiency of light pursuing the horizontal alignment of the emitting dipole moment. However, It was difficult to figure out the reason why Ir(III) complexes have preferred molecular alignments as doped in the emissive layers. Here, we carefully examined the vacuum deposition process of phosphors on organic layers using a combination of molecular dynamics simulations and quantum mechanical analyses. Theoretical prediction of EDO from simulated deposition process reveals excellent quantitative agreement with experimental observations, reproducing the anisotropic molecular orientations of heteroleptic Ir complexes in the emissive layers. In-depth analysis indicates that the molecular orientation originates from the coupling of the cyclometalated main ligand participating in the optical transition with neighbor host molecules. Close observation of the simulation results indicate that non-bonded energy has a critical influence on the molecular orientation during the deposition, and controlling the miscibility between host and dopant molecules.


F (Room 313)



F38-5 16:50~17:05

Organic Light Emitting Board for Interactive Visualization

Eui Hyuk Kim, Seokyeong Lee, Soyeon Baek, SeungWon Lee, and Cheolmin Park (Yonsei Univ., Korea)

Interactive displays involve the interfacing of a stimuli-responsive sensor with a visual human-readable response. Here, we describe a polymeric electroluminescence-based stimuli-responsive display method that simultaneously detects external stimuli and visualizes the stimulant object. This organic light-emitting board is capable of both sensing and direct visualization of a variety of conductive information. Simultaneous sensing and visualization of the conductive substance is achieved when the conductive object is coupled with the light emissive material layer upon application of alternating current. A variety of conductive materials can be detected regardless of their work functions, and thus information written by a conductive pen is clearly visualized, as is a human fingerprint with natural conductivity. Furthermore, we demonstrate that integration of the organic light-emitting board with a fluidic channel readily allows for dynamic monitoring of metallic liquid flow through the channel, which may be suitable for biological detection and imaging applications.


G (Room 314~315)

39 2D Transistors I

Date: Aug. 30 (Thu.), 2018Time: 15:50~17:20Session Chair: Prof. Nan Liu (Beijing Normal Univ., China)

G39-1 15:50~16:15

Inkjet Printing Technique of Single Crystalline Organic Semiconductor Films for High-Performance TFTs

Hiromi Minemawari, Mutsuo Tanaka, Seiji Tsuzuki, Satoru Inoue, Toshikazu Yamada (AIST, Japan), Reiji Kumai (CMRC, Japan), Yukihiro Shimoi, and Tatsuo Hasegawa (AIST, Japan)

In this paper, we demonstrate fabrication of single crystalline organic semiconductor thin films by using the double-shot inkjet printing (DS-IJP) technique for alkyl-substituted benzothieno[3,2-b][1]benzothiophene (BTBT) derivatives and high-performance OTFTs based on the printed films. Visualization of the printing process and systematic investigation of the correlation between molecular structures, solution-processability and crystal structures revealed the fundamental requirements to form high-quality organic semiconductor films through the DS-IJP. On the basis of these findings, we succeeded in fabricating TFT based on the printed single crystal films of several symmetrically/asymmetrically substituted BTBT derivatives with high yield and reproducibility and achieving high carrier mobility as high as 10 cm2V-1s-1.

G39-2 16:15~16:40

Ultratransparent and Stretchable Graphene Electrodes

Nan Liu (Beijing Normal Univ., China)

To enable excellent strain-dependent performance of transparent graphene conductors, we created graphene nanoscrolls in between stacked graphene layers, referred to as multi-layer G/G scrolls (MGG). Under strain, some scrolls bridged the fragmented domains of graphene to maintain a percolating network that enabled excellent conductivity at high strains.


G (Room 314~315)

39 2D Transistors I

Date: Aug. 30 (Thu.), 2018Time: 15:50~17:20 Session Chair: Prof. Nan Liu (Beijing Normal Univ., China)

G39-3 16:40~17:05

Thin-Film Transistors Based on Organic-2D Heterostructures

Tae Hoon Lee (Kwangwoon Univ., Korea)

The charge transport in polycrystalline organic films is significantly hindered by scattering at grain boundaries and interface traps, which limits the application of organic thin-film transistors (OTFTs) for high-performance displays and electronics. Thus, it is of great importance to reduce grain boundaries and traps by improving the crystallinity and interfaces of organic films. In this talk, we discuss the use of van der Waals heterostructures of organic and chemical-vapor-deposited 2D materials for achieving highly crystalline organic films. We utilized C60/graphene and C60/h-BN heterostructures for vertical and lateral transistors, respectively. The C60 films evaporated on 2D materials show two-dimensional growth and epitaxial relationship between C60 and 2D materials, which are confirmed using transmission electron microscopy and supported by ab initio calculations. Also, electrical characterization of the transistors reveals low densities of grain boundaries and interface traps due to the two-dimensional and epitaxial growth of organic films on 2D materials. The use of organic-2D heterostructures for OTFTs will find a variety of applications including flexible displays and electronics.

G39-4 17:05~17:20

High-Performance and Large-Area Metal Chalcogenide Thin-Film- Transistors with Chalco-Gel Precursors

Sung Min Kwon, Jae Sang Heo, Min-Uk Lee, Myung-Gil Kim, and Sung-Kyu Park (Chung-Ang Univ., Korea)

Here, we demonstrated a general strategy for obtaining stable metal chalcogenide solutions, large-area metal chalcogenide thin-films, and high-mobility metal chalcogenide devices based on benign solution route using organochalcogen, metal salt precursors, and complexing agents. The stable chalco-gel with diverse metal species and conventional organic solvents could be easily transformed into high-quality metal chalcogenide thin-films over large area. Diverse metal chalcogenide and those alloys (MQX:M = Zn, Cd, In, Sb, Pb;Q = Se, Se Te) were successfully obtained at relatively low processing temperature (< 400℃). As a representative demonstration, thin-film transistors (TFTs) and integrated circuits was fabricated on a borosilicate glass substrate using CdSe active layers. The CdSe TFTs and integrated circuits exhibited high saturation field-effect mobility exceeding 100 cm2V-1s-1 over a 2.5-inch area (100 TFT devices), good operational stability (?Vth < 0.5 V at positive-gate bias stress for 10 k-sec), and oscillation frequency of ~2.5 MHz in a seven-stage ring oscillator.


H (Room 316~317)

40 Light Field Display Techniques

Date: Aug. 30 (Thu.), 2018Time: 15:50~17:15Session Chairs: Prof. Hongen Liao (Tsinghua Univ., China)

Dr. Soon-Gi Park (LetinAR, Korea)

H40-1 15:50~16:15

Integral Three-Dimensional Display Using Multiple Display Units

Hisayuki Sasaki, Naoto Okaichi, Hayato Watanabe, Masahiro Kawakita, and Tomoyuki Mishina (NHK, Japan)

We are studying spatial image reproduction and three-dimensional (3D) display by integral photography to develop a 3D television that can reproduce natural 3D images without requiring special glasses. In this method, light rays reflected by subjects can be reproduced, and natural 3D images can be observed irrespective of the position of the observer. We introduce several studies on quality improvement by combining multiple integral 3D image displays.

H40-2 16:15~16:30

Flat-Panel See-Through Integral Imaging Display Using a Transparent Polarized Point Light Source Array

Zi Wang, Guoqiang Lv, and Qibin Feng (Hefei Univ. of Tech., China)

An optical see-through three-dimensional (3D) display is a key device for augmented reality (AR) technology since it can superimpose 3D images on real objects. We demonstrated a see-through 3D display based on point light source integral imaging (PLSII) . This display consists of an edge-lit light guide plate (LGP), a polarizer array and a transparent liquid crystal display (LCD) panel without rear polarizer. The combination of the light guide plate and the polarizer array acts as a transparent polarized point light source array (PLSA), and reconstructs the 3D image with the elemental image array loaded on the LCD panel. The background rays passing through the gaps in the polarized PLSA carry the object information and implement see-through property. The see-through and superposition capabilities of the proposed method are demonstrated in experimental result.


H (Room 316~317)




H40-3 16:30~16:45

Blocking Surface-Reflected Light in Omnidirectional Aerial Display

Erina Abe and Hirotsugu Yamamoto (Utsunomiya Univ., Japan)

Omnidirectional display, which shows pictures in all direcitions, has a merit to give a viewer a realistic feeling because of the surrounding visual images. Aerial imaging by retro-reflection (AIRR) has been proposed to form aerial information screen with a wide viewing angle and utilized for an omnidirectional aerial display. However, its omnidirectional aerial image is visible in front of surface reflections on the retro-reflector. That is, although a part of incident light to the retro- reflector is retro-reflected, another part of the incident light is reflected on the surface of the retro-reflector. This paper proposes an optical design to block the surface-reflected light to the viewing position in the omnidirectional aerial display.

H40-4 16:45~17:00

Non-Hogel-Based Hologram Synthesis from Light Field

Mehdi Askari and Jae-Hyeung Park (Inha Univ., Korea)

In the community of computer graphics and computer vision, the term light field is well established. The light field display not only reproduces the intensity but also the direction of light rays. However, in light field display we lose the phase information which in turn compromise the resolution of the reconstructed image. On the other hand, the wave-front reconstruction enables an ideal 3D display, which is known as holography. The advantage is that the wave-front reconstructed by a hologram has phase information which contributes in better resolution than the light field display. In this paper, we propose a direct conversion from the light field data to the wave field information without the need of exploiting point coordinates of a 3D scene. Unlike holographic stereogram whose resolution depends on the number of hogels, the resolution of the proposed hologram will be the same as the resolution of the light field itself.


H (Room 316~317)




H40-5 17:00~17:15

Extension of Dynamic Depth Range in All-Optical Depth Coloring Camera

Sungjin Lim, Mugeon Kim, Daerak Heo, Geunseop Choi, and Joonku Hahn (Kyungpook Nat'l Univ., Korea)

All-optical depth coloring (AODC) camera is able to extract depth information without any computation. The AODC camera colors the objects according to their depth profile. The AODC camera converts the depth of the object into wavelength. This conversion in AODC camera is fully optical process including both encoding and decoding and it is realized by using one grating, two lenses and moving the synchronized two slits. So, the AODC camera has a distinct advantage in the measurement speed without any computation cost. In this paper, we improve our previous work and expand the dynamic depth range. The proposed method is realized by adding the slits in the gating part in comparison of the previous work.


A (Room 211~213)

41 TADF Developments

Date: Aug. 31 (Fri.), 2018Time: 09:00~10:20Session Chairs: Dr. Pawel Malinowski (IMEC, Belgium)

Prof. Seunghyup Yoo (KAIST, Korea)

A41-1 09:00~09:15

HyperfluorescenceTM, A Disruptive Technology, Changes the OLED Displays

Junji Adachi and Hisashi Okada (Kyulux Inc., Japan)

Thermally Activated Delayed Fluorescence (TADF) is a OLED emission technology which enables highly efficient emission without using iridium. One disadvantage of TADF is low color purity if it is applied to displays because of its wide emission spectrum. HyperfluorescenceTM combines TADF and fluorescence to provide the ultimate solution for OLED display. TADF acts as excitons generator and transfers excitons to Fluorescence by Förster energy transfer (FRET). Fluorescence molecule receives excitons and emits light as high as 100% internal quantum efficiency which is four times higher efficiency than a conventional Fluorescence emitting technology. (Fig. 1) HyperfluorescenceTM enables all requirement for a display, full RGB color, nearly 100% Internal Quantum Efficiency, and pure narrow color spectrum. HyperfluorescenceTM is a disruptive technology that will replace the current emitting technologies, fluorescence and phosphorescence, by early 2020s.

A41-2 09:15~09:40

Highly Efficient Deep Blue TADF Emitter Materials for Next-Generation OLED Displays

Thomas Baumann and Geoergios Liaptsis (Cynora GmbH, Germany)

CYNORA develops highly efficient blue OLED emitters based on Thermally Activated Delayed Fluorescence (TADF) technology. TADF is a promising approach to provide high efficiency blue emitters with superior color point (CIEy < 0.15) and long lifetime. A new highly efficent blue emitter for OLEDs would lead to great opportunities to create better OLED applications with lower power consumption and higher display resolution.

A41-3 09:40~10:05

Theoretical Insights into the Rational Design of Thermally Activated Delayed Fluorescence Materials

Dongwook Kim (Kyonggi Univ., Korea)

We highlight the fundamental difference between the singlet and triplet excited states. On the basis of such difference, the more effective way of controlling will be suggested. In addition, the spin-orbit coupling between the singlet and triplet states in organic emitters will be discussed in both qualitative and quantitative ways, which lead us to a rational design rule of organic molecules of efficient ISC.


A (Room 211~213)

41 TADF Developments

Date: Aug. 31 (Fri.), 2018Time: 09:00~10:20 Session Chairs: Dr. Pawel Malinowski (IMEC, Belgium)

Prof. Seunghyup Yoo (KAIST, Korea)

A41-4 10:05~10:20

Synthesis of Triazine Based Green Thermally Activated Delayed Fluorescent Materials for Highly Efficient Organic Light-Emitting Diodes

Ha Lim Lee, Si Hyun Han (Sungkyunkwan Univ., Korea), Wan Pyo Hong, Ok-Keun Song (LG Chem., Korea), and Jun Yeob Lee (Sungkyunkwan Univ., Korea)

Two kinds of triazine based dopant materials were designed and synthesized as green thermally activated delayed fluorescent (TADF) materials in organic light-emitting diodes (OLED). The acceptor moiety of dopant materials were synthesized by using Suzuki-coupling reaction twice. In case of donor units, 9H-carbazole (Cz) and 3,6-di-tert-butyl-9H-carbazole (tCz) were used. These two dopants were tested with unipolar host, (oxybis (2,1-phenylene))bis(diphenylphosphine oxide) (DPEPO). The dopant which has Cz donor units showed better performance in OLED device than the other dopant that has tCz donor units. Both dopant materials showed over 10.0% external quantum efficiency (EQE) and exhibited TADF property. The maximum EQE of Cz type dopant was higher than tCz type dopant by about 4.0%. However, at high doping concentration, tCz type dopant did not show any quenching effect, only around 1.0% of EQE drop. In contrast, Cz type dopant showed high concentration quenching effect. This effect was caused by substituting tert-butyl group at position of 3 and 6 of Cz because the tert-butyl goup made intermolecular interaction reduced.


B (Room 214~216)

42 Transparent/Flexible Displays

Date: Aug. 31 (Fri.), 2018Time: 09:00~09:55Session Chairs: Prof. Sang-Hee Ko Park (KAIST, Korea)

Dr. Lorenza Moro (Kateeva, Inc., USA)

B42-1 09:00~09:15

Review of Networked Nanowire Fabrication Using Cracked Template and Applications to Transparent Electrodes and Sensors

Yeong-gyu Kim, Byung Ha Kang, Hee Jun Kim, Young Jun Tak, Won-Gi Kim, and Hyun Jae Kim (Yonsei Univ., Korea)

We suggested a simple method to fabricate the interconnected nanowires using self-formed cracked template without complex equipment. The cracked template was easily formed by spin-coating the template solution on the substrate and drying it. The fabricated template could be easily removed by a physical treatment like ultrasonic treatment. Therefore, when a material to be fabricated as nanowires was deposited on the cracked template and removing the template using ultrasonication, the deposited material on the island structure of the template was removed together with template during the ultrasonication, and only the material deposited on cracks remained. Through these processes, the highly-interconnected nanowires could be obtained. Based on these fabrication methods, we fabricated an interconnected nanowires of Al metal and indium gallium zinc oxide (IGZO), and they are applied to the transparent electrode and thin-film transistor (TFT) based sensors, respectively.

B42-2 09:15~09:40

Material Research Strategy for Flexible and Stretchable Liquid Crystal Displays

Hideo Fujikake, Seiya Kawamorita, Daisuke Minami, Ryosuke Saito, Yosei Shibata, and Takahiro Ishinabe (Tohoku Univ., Japan)

Flexible displays have the great potential of creating many application concepts. Moreover, stretchable LCDs enable to deform for various three-dimensional curvatures as wearable and ambient devices. Such soft LCD technologies have impacts in future image media technology. For flexible LCDs, the most important challenge is the cell gap keeping in bending. We investigated the spacer-wall forming method, based on wettability difference between LC and monomer on a substrate surface. After patterning substrate surface with fluoro-resin and rubbed polyimide, we promoted phase separation of LC/monomer solution by cooling. For future printing and roll-to-roll processes without photo-lithography, we have developed high-precision wall forming process based on transfer method using PDMS mold. As an LC layer for stretchable LCDs, we are researching self-standing LC gel. The LC gel could be extended (unbroken). The electro-optic effects of the LC gel were observed. Our advanced component/process approach will be useful for establishing next-generation soft LCD technology.


B (Room 214~216)

42 Transparent/Flexible Displays

Date: Aug. 31 (Fri.), 2018Time: 09:00~09:55Session Chairs: Prof. Sang-Hee Ko Park (KAIST, Korea)

Dr. Lorenza Moro (Kateeva, Inc., USA)

B42-3 09:40~09:55

Highly Polarized Emission by Vacuum Evaporation of Organic Light-Emitting Compound

Byung-Jun Kang, Dong-Myung Lee, Chang-Jae Yu (Hanyang Univ., Korea), E-Joon Choi (Kumoh Nat'l Inst. of Tech., Korea), and Jae-Hoon Kim (Hanyang Univ., Korea)

In this work, we first demonstrated linearly polarized photoluminescence (LPPL) by an evaporation of low molecules. The low molecular light-emitting compound exhibits liquid crystalline (LC) phase and thus a highly ordered state is easily achieved on the anisotropically treated substrate. After the evaporation of the mesogenic light-emitting compound on the rubbed alignment layer the thermal annealing process at the LC phase is carried out and the rapidly quenching process is followed. By thermal annealing and rapidly quenching processes, a ratio of the parallel LPPL to the perpendicular LPPL to the rubbing direction is dramatically improved from 1.5:1 to 8.2:1.


C (Room 217)

43 Advanced Driving Technologies

Date: Aug. 31 (Fri.), 2018Time: 09:00~10:20Session Chair: Prof. Seung-Woo Lee (Kyung Hee Univ., Korea)

C43-1 09:00~09:25

Driving AMOLED Displays with Lower Power and Improved Luminescence Uniformity

Xinghua Xu, Jiali Fan, and Xiaojun Guo (Shanghai Jiao Tong Univ., China)

With significant improvement of luminance efficiency of OLEDs for low power, and also reduction of pixel area for high resolution mobile displays, the required largest pixel current has decreased to very low levels. As a result, for most of lower gray levels, the driving TFT would be operated in the subthreshold regime. Therefore, the commonly used threshold voltage compensation approaches will not work properly, and the TFT current is also very sensitive to the voltage fluctuations in the subthreshold regime. These could cause severe non-uniformity issues for AMOLED displays, especially at lower gray cales. This paper will discuss these issues through circuit and system simulations. A dynamic voltage scaling (DVS) approach to adjust both the supply voltage and the data voltage according to the displayed image is proposed, which is shown to be able to avoid operation of the driving TFT in the deep subthreshold regime for improved uniformity, and in the meantime further reduce the static power consumption.

C43-2 09:25~09:50

Image Processing for Enhancing Display Performance

Chihao Xu, Maxim Schmidt, Michael Grüning, and Xingtong Jiang (Saarland Univ., Germany)

Besides physical, chemical and process engineering, image processing is a further method for achieving higher display performance. In this paper, image processing techniques for LCDs as well as for AMOLED displays will be discussed. For LCDs, the most efficient image improving and power saving method is local-dimming. Visual artifacts have to be suppressed and the visual quality like contrast ratio should be enhanced. The well proven SSC-algorithm is such an algorithm which was applied on different Edge-Lit LCDs. The effectiveness depends on design of the BLU like the light-spread-function. The high-contrast AMOLED displays suffer from modest lifetime and decreasing image quality due to image sticking. This aging may be compensated by applying proper aging model which deliver the drift of the current efficiency. The lifetime can significantly be extent. In any case, image processing is eligible and effective for enhancing display performance.


C (Room 217)

43 Advanced Driving Technologies

Date: Aug. 31 (Fri.), 2018Time: 09:00~10:20 Session Chair: Prof. Seung-Woo Lee (Kyung Hee Univ., Korea)

C43-3 09:50~10:05

Design and Evaluation of High Resolution Matrix Backlight for Excellent Local-Dimming Results and Uniformity of LCDs

Maxim Schmidt, Chihao Xu, Michael Grüning, Julian Ritter (Saarland Univ., Germany), and Andreas Hudak (STZ Electronic Systems GmbH., Germany)

High resolution matrix backlight is being considered as a reasonable technology in order to fulfill requirements like high visual quality, power saving and lifetime. It may generate high luminance and deliver excellent black level as demanded from HDR and automotive application. Up to now, the design of matrix backlight has been focused on uniformity, while the local dimming algorithm is developed independently. In this paper, the general aspects of backlight unit design are considered as a whole and a reasonable FWHM to pitch ratio will be proposed. In addition, a new procedure for the uniformity analysis of direct-lit BLUs will be introduced, which is necessary due to the upcoming high-resolution matrix backlight. The aspects and challenges of local-dimming in combination with the high density BLUs will be described and solutions will be proposed. Some metrics for performance evaluation are introduced.

C43-4 10:05~10:20

Multi-Layer and Multi-Function OSD for Microdisplay Systems

Chan Ung Lee, Wook Hong, and Joon Goo Lee (RAONTECH Inc., Korea)

An on-screen display (OSD) superimposes text and/or bitmap images on a screen, and thus a user can notice necessary details about system status. Many display panels have offered OSD function with its corresponding panel controller. However, it is rare to find the function in microdisplay systems in spite of usefulness. We propose multi-layer OSD which has multitude additional features to provide as many options as possible for various applications with better usability. The OSD has two main modules. One is a bitmap renderer, and the other is a text renderer. Both renderers are controllable via I2C communication path and embedded micro-computer. Each renderer can import bitmap images, or binary font data and color palettes from an SPI Flash memory, and can represent multiple images and text boxes with various setting. We implemented and fabricated the OSD as an application specific integrated circuits (ASIC), and verified all the functionalities we designed.


D (Room 218)

44 LC Materials

Date: Aug. 31 (Fri.), 2018Time: 09:00~10:30Session Chairs: Prof. Suk-Won Choi (Kyung Hee Univ., Korea)

Prof. Hiroyuki Yoshida (Osaka Univ., Japan)

D44-1 09:00~09:25

Second Harmonic Microscopy for Liquid Crystals

Fumito Araoka (CEMS, Japan) and Koichiro Shirota (RAP, Japan)

We review some of our research activities using SHG microscopy for LCs, starting from visualization of spontaneous polarization in FLCs. Followingly, we demonstrate, for the first time, visualization of the flexoelectric polarization in NLCs in which SHG has been conventionally thought to be forbidden because of their centrosymmetric nature. The flexoelectric effect is a coupling of elastic deformation and electric dipoles, which deteriorates the image quality by the image flickering, being significant in FFS mode. In the present work, the flexoelectric polarization is induced by an electric field to various NLCs with positive or negative dielectric anisotropy. We also compare SHG images among various cell geometries of not only FFS but also IPS and TN modes. Furthermore, we have confirmed the flexoelectric polarization even in a wide-temperature BP. Thus, we believe that our method is greatly advantageous to evaluate the performance of industrial LCDs, influenced by the design of devices and LC materials.

D44-2 09:25~09:50

Hierarchical Nanostructures from Functional Reactive Mesogens

Kwang-Un Jeong (Chonbuk Nat'l Univ., Korea)

Anisotroptic liquid crystal (LC) networks prepared from reactive mesogens (RM) have numerous advantages in optoelectronic devices especially because of the excellent processability. To fabricate the robust LC thin films with excellent thermal, chemical and mechanical stabilities, the photo-polymerization of anisotropically pre-oriented RMs should be conducted on the optimized conditions. Since the final physical properties of anisotroptic LC networks depend on chemical functions and physical intermolecular interactions, the hierarchical superstructures of the programmed RMs with specific chemical functions should be controlled on the different length and time scales before polymerization. The presentation describes the fundamental characteristics and recent research interests of anisotropic LC networks, elastomers and gels fabricated using various programmed RMs.


D (Room 218)

44 LC Materials

Date: Aug. 31 (Fri.), 2018Time: 09:00~10:30Session Chairs: Prof. Suk-Won Choi (Kyung Hee Univ., Korea)

Prof. Hiroyuki Yoshida (Osaka Univ., Japan)

D44-3 09:50~10:15

Liquid Crystals: A Functional Building Block for Programmable Adaptive Materials

Suk-Kyun Ahn (Pusan Nat'l Univ., Korea)

Programmable adaptive materials capable of shape transformation in a reversible and controlled manner offer a multifunctional material platform, and are appealing in numerous applications including soft robotics, smart coatings, and dynamic substrates for tissue engineering and printed electronics. Liquid crystals (LCs) can be an interesting building block for creating such reconfigurable soft materials because of the director orientation by alignments and reversible change in their ordering by external stimuli. In this talk, I will discuss how we exploit the unique properties of LCs to prepare macroscopically aligned LC elastomer (LCE) monoliths. The surface amenable chemistry for LCE synthesis together with various alignment methods will be highlighted. Depending on the initial alignment conditions, these reconfigurable soft materials can show a reverible switching between 2D sheets and complex 3D shapes under various external stimuli including heat and light.

D44-4 10:15~10:30

Color Design of a Dye-Doped Cholesteric Liquid Crystal Cell for Transmittance Control Devices

Seong-Min Ji, Yuong-Seo Jo, Seung-Min Nam, Seung-Won Oh, Sang-Hyeok Kim, Jae-Won Huh, and Tae-Hoon Yoon (Pusan Nat'l Univ., Korea)

Transmittance-control devices have been studied for smart window, goggle, and automotive applications. Transmittance-control devices, such as a suspended particle device, electro-chromic device, and dye-doped liquid crystal (LC) device, reduce the light intensity by absorption of the incident light. Among these devices, dye-doped LC devices are widely used for automotive applications which require the fast response time. A dye-doped LC device has a high transmittance difference between the transparent and opaque states when it has a large twist angle, such as a dye-doped cholesteric LC (DDCLC) cell. However, because of the twist structure, the color of the opaque state in a DDCLC cell is different from the black color of a homogeneous aligned LC cell. The main reason for the color difference is that the direction of long axis of dye molecules in DDCLC. Because the absorption of the incident light is maximized in the long axis of dye molecules, it should be considered with the direction of dye molecules in designing the dye.


E (Room 311~312)

45 Process Technology for OLED Manufacturing

Date: Aug. 31 (Fri.), 2018Time: 09:00~10:20 Session Chair: Dr. Steve Ready (Xerox Palo Research Center, USA)

E45-1 09:00~09:25

Proprietary Process Technologies for Large Area OLED Manufacturing

Jae Hoon Jung, Soeren Hartmann, Markus Schwambera, Boerge Wessling, and Markus Gersdorff (APEVA SE, Germany)

Taking the basic principle, APEVA has added its proprietary Close Coupled Showerhead® (CCS) technology as well as novel source technologies specifically developed for efficient evaporation of organic materials. These core technologies enable the precise deposition of organic thin films with excellent thickness uniformity and high material utilization efficiency at high throughput. The Short Thermal Exposure Source (STExS) technology allows refill of the sources during production and thus enables continuous operation without need for downtime. Besides Uptime the short thermal exposure time of organic material avoids thermal degradation of the materials and ensures high purity processing. In summary the OVPD approach enables better device quality and realizes also cost advantages through economies of scale, thus leading to significantly lower manufacturing costs.

E45-2 09:25~09:50

FMM Materials and Manufacturing Process

Chiwoo Kim, Kisoo Kim, Jong Kab Park, Doh Hoon Kim, and Kiro Jung (APS Holdings Corp., Korea)

For RGB patterning, high accuracy fine metal mask (FMM) is being used. To implement the UHD or higher resolution displays, specially designed and fabricated FMM should be developed. The technical hurdles and the solutions of the FMM materials and patterning process are discussed.


E (Room 311~312)

45 Process Technology for OLED Manufacturing

Date: Aug. 31 (Fri.), 2018Time: 09:00~10:20 Session Chair: Dr. Steve Ready (Xerox Palo Research Center, USA)

E45-3 09:50~10:05

SiOx Passivation Layer Using HMDSO for OLED Device

Ji Min Kim, Hyeong Wook Jang, and Sin Woo Lee (LG Display Co., Ltd., Korea)

In recent years plasma enhanced chemical vapor deposition (PECVD) of silicon containing layers has become a widely used technique for Passivation layer of OLED device which is indispensable part for encapsulation. Not only silane but tetraethyloxysilane (TEOS) and hexamethyldisiloxane (HMDSO) is a commonly used precursors for the PECVD of SiOx layers. Especially, HMDSO is advantageous for temperature sensitive substrates like OLED device due to operation temperature as low as 100˚C2 This study focused on the water barrier performance of SiOx layer, for which we gave the variation of HMDSO/O2/Ar ratio for the elimination of hydrocarbon in the SiOx layer. Besides, the optimum ratio of gases were studied for the annihilation of diffusable oxygen which caused the degradation of organic emitting layers.

E45-4 10:05~10:20

High Throughput Al2O3/Organic Multilayer Structure Thin Films for Moisture Barrier by Spatially Resolved Atomic Layer Deposition Processes

Sun Jung Kim, Sang Heon Yong, You Jin Choi, Hyeok Hwangbo, and Heeyeop Chae (Sungkyunkwan Univ., Korea)

ALD processes are one of the promising process for the deposition of moisture barrier layers on plastic substrates because ALD produces high quality films at relatively low temperature. But, growth per cycle (GPC) is in the order of 1 angstrom and ALD processes are difficult to apply to commercial display fabrication processes at this moment. To resolve the low throughput, spatial ALD has been developed. In the spatial ALD reactor, precursor and reactant gas are supplied simultaneously at different gas injection modules and those reatants are physically separated by Ar purge gas flow. In this study, high throughput spatial Al2O3 ALD deposition process was developed for multilayer moisture barrier films. Al2O3/organic multilayer structure was deposited in the spatial ALD chamber, and moisture barrier performance and bending resistance property were invetigated. Water vapor transmission rate (WVTR) were measured at 85 ƃ and 85% relative humidity by electrical Ca test. The multilayer structure showed considerably low WVTR value of 8.5 x 10-5 g/m2day with improved flexibility than single Al2O3 layer structure.


F (Room 313)

46 Advanced Micro-LED Technologies

Date: Aug. 31 (Fri.), 2018Time: 09:00~10:15 Session Chair: Prof. Yong-Young Noh (Dongguk Univ., Korea)

F46-1 09:00~09:25

Ultra-Fine Pitch Thin-Film Micro LED Display Simulation

Shu-Mei Yang, Po-Hsun Wang, Chia-Hsin Chao, Yen-Hsiang Fang, and Chien-Chung Lin (ITRI, Taiwan)

Micro-LEDs have been considered as the next generation display technology. They are expected to exceed LCD and OLED in terms of brightness and power efficiency for outdoor applications like smartphone, wearable devices and they can also be applied in the AR/VR environment. One of the very important characteristics is its light field pattern and the related image quality issue. In this paper, we simulated a full-color micro-LED array emission pattern for display application. The influence of the surface molding layer is investigated by changing the shape of the molding and calculated by commercial software to obtain optimized design for micro LED panel display. The simulated results show that the molding layer is an important issue. Unsuitable molding design may affect the emission pattern and result in colour separation and degradation of the image quality.

F46-2 09:25~09:50

Feasibility of Low Cost Micro LEDs Prepared by Pulsed Sputtering

Hiroshi Fujioka, Kohei Ueno, and Atsushi Kobayashi (The Univ. of Tokyo, Japan)

We have recently developed a new PVD-based growth technique for GaN called PSD (pulsed sputtering deposition) that allows us to fabricate RGB full color LEDs at process temperatures below 500C. In this presentation, we will discuss the feasibility of low cost fabrication of large area micro LEDs on various low cost substrates such as glass sheet or metal foils. We will also discuss the feasibility of fabrication of high performance TFTs with nitride semiconductor films for the switching devices of micro LEDs. This low temperature growth technique can be also applied to fabrication of large area flexible nitride devices at low cost.


E (Room 311~312)

46 Advanced Micro-LED Technologies

Date: Aug. 31 (Fri.), 2018Time: 09:00~10:15 Session Chair: Prof. Yong-Young Noh (Dongguk Univ., Korea)

F46-3 09:50~10:15

Withdrawal


G (Room 314~315)

47 2D Transistors II

Date: Aug. 31 (Fri.), 2018Time: 09:00~10:30Session Chairs: Dr. Do Kyung Hwang (KIST, Korea)

Prof. Jaekyun Kim (Hanyang Univ., Korea)

G47-1 09:00~09:25

Chargeable Semiconductors for Non-Volatile Transistor-Type Memory

Wen-Ya Lee (Nat'l Taipei Univ. of Tech., Taiwan)

Organic nonvolatile memory have attracted great attention worldwide because of their role in the management and storage of electrical information in the wearable, flexible electronics. Several memory technologies, including nano-floating gates, polymer electret, and polarizable ferroelectric materials, were reported. However, these approaches required to add an extra chargeable dielectric layer or floating gates to store charges. These approaches not only cause complicated processes, but also increase cost. To simplify the process and device structures, we demonstrated a system based on chargeable semiconductors without using any floating gate or chargeable dielectrics for organic non-volatile memory. This talk will introduce several polymer semiconductors with strong non-volatile memory behaviors, including ambipolar conjugated polymers, doped polymer semiconductors and ionic polymer semiconductors. Possible mechanisms of the chargeable semiconductors will be also elucidated. This presentation will open a novel way toward high performance memory devices with low cost and simple processes.

G47-2 09:25~09:50

CVD Monolayer MoS2 and Exfoliated WSe2 Field Effect Transistors toward Active Matrix Pixel with Organic Light Emitting Diodes

Hyeokjae Kwon, Sanghyuck Yu (Yonsei Univ., Korea), Sourav Garg, Seongsin Kim, Patrick Kung (Univ. of Alabama, USA), and Seongil Im (Yonsei Univ., Korea)

Transition metal dichalcogenides have shown potential as a future semiconductor material. However, mechanical exfoliation limits length scale of flakes only to a few micrometers. Researchers have studied to make such 2D MoS2 in a large scale, which would open the gate toward practical applications enabling conventional photolithographic device/circuit patterning. Yet, reports in photolithographic patterning for large scale 2D FETs are rare. For instance, CVD-grown monolayer MoS2 FETs might have never been used for switching and driving of organic light emitting diodes (OLEDs) [1,2]. Here, we have fabricated CVD-grown large scale MoS2 FETs using a high temperature MoS2 growth technique, and investigated their applications toward analogue OLED pixel as low voltage switching/and high current driving FETs. In particular, we successfully spin-coated an ultrathin hydrophobic polystyrene polymer layer on Al2O3 dielectric, so that the uniformity of threshold voltage of FETs might be improved. Dynamic switchings of blue and green OLED pixels were nicely demonstrated using the CVD monolayer MoS2 FETs as shown below.


G (Room 314~315)

47 2D Transistors II

Date: Aug. 31 (Fri.), 2018Time: 09:00~10:30 Session Chairs: Dr. Do Kyung Hwang (KIST, Korea)

Prof. Jaekyun Kim (Hanyang Univ., Korea)

G47-3 09:50~10:15

Low Dimensional Semiconductor Materials for Various Electronic and Optoelectronic Applications

Do Kyung Hwang (KIST, Korea)

Low dimensional semiconducting materials such as colloidal quantum dots (QDs) and two-dimensional van der Waals atomic crystals are an emerging class of new materials that can provide important resources for future electronics and materials sciences due to their unique physical properties. In the first part of this presentation, we introduce a new approach to fabricate PbS QD sensitized IGZO hybrid phototransistors for cost-effective NIR detection. The PbS QD can be functionalized directly onto the surface of the IGZO TFT to create a new bi-functional optoelectronic device: a gate-tunable, highly sensitive, and easily integrated NIR-sensing three-terminal phototransistor. In the second part, we report on a high performance MoS2 and BP nanosheet based nonvolatile memory transistors with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. In order to explore advanced memory applications beyond unit memory devices, we implement two kinds of memory inverter circuits: a resistive-load inverter circuit and a complementary inverter circuit.

G47-4 10:15~10:30

Polymer Co-Sputtered IGZO Thin Film Transistors with Improved Water Resistance and Positive Bias Stress Stability

Jae Won Na and Hyun Jae Kim (Yonsei Univ., Korea)

We report polymer co-sputtered indium gallium zinc oxide (P:IGZO) thin film transistors (TFTs) and their improved stability against water exposure and electrical stresses. We co-sputtered IGZO with polytetrafluoroethylene (PTFE) which is a flexible high-molecular-weight polymer consisting wholly of carbon and fluorine. PTFE is a highly hydrophobic material due to high electronegativity of fluorine. As a consequence, PTFE co-sputtered IGZO (P:IGZO) TFTs demonstrated improved stability against water exposure for 1 h. The Vth shift of P:IGZO TFT under positive bias stress (PBS) and positive bias temperature stress (PBTS) test for 10,000 s represented 2.70 V and 3.26 V, respectively, whereas the Vth shift of pristine IGZO TFT was 3.98 V and 5.83 V, respectively. In addition, P:IGZO TFT exhibited stable performances upon multiple bending through a radius of 5 mm.


H (Room 316~317)

48 Innovative 3D Displays II

Date: Aug. 31 (Fri.), 2018Time: 09:00~10:35Session Chair: Dr. Jiwon Yeom (KETI, Korea)

H48-1 09:00~09:25

Volumetric Displays Using Holographic Multi-Photon Excitations

Kota Kumagai and Yoshio Hayasaki (Utsunomiya Univ., Japan)

Volumetric displays with holographic two- and multi-photon excitations for fluorescence plates, air, and glycerin using a computer-generated hologram were developed. The multi-photon excitation implemented with a femtosecond laser gives a wide selectivity of screen materials. The holographic technique has advantages of increasing the number of voxels per unit time, increasing the total input energy, and controlling the size, shape, and spatial position of voxels.

H48-2 09:25~09:50

Layering Liquid Crystal Panels and Microlens Arrays in Autostereoscopic Displays

Hironobu Gotoda (Nat'l Inst. Informatics, Japan)

Arranging multiple transparent films in layers was a method invented by Lumière in 1920 to represent stereoscopic scenes. Recently, descendants of this method has been investigated, where films are replaced by liquid crystal panels, and refractive elements such as microlens arrays are attached to. Here we review such types of autostereoscopic displays. We first focus on a multilayer display, which is constructed by stacking multiple LC panels on a light source. The depth-of-field of this display is proportional to the distance between front and rear panels, and generally deeper than that of a lenticular or parallax barrier display. However, artifacts may be observed when the angle of viewing becomes large. We next present an improvement of multilayer display, where each panel is sandwiched between sheets of microlens arrays. The lenses refract light so that each pixel in the panel is only visible from a specific viewing zone. This enables us to represent 3D scenes containing specular highlights and mitigate the artifacts


H (Room 316~317)



H48-3 09:50~10:05

Viewing Zone Expansion by High-Speed Horizontal-Position Change of Front and Rear Images in DFD Display

Asuka Nogami, Haruki Mizushina, and Shiro Suyama (Tokushima Univ., Japan)

We propose new method for enlarging viewing zone by high-speed horizontal-position change of front and rear images in DFD display. In conventional DFD display, viewing zone is restricted between the overlapped region of front and rear images, that is, within interocular distance. On the other hand, in our proposed method, by changing the front and rear images positions alternately in the horizontal direction at high speed, the front and rear images can instantaneously overlap each other even outside interocular distance, that is, anywhere in the horizontal direction. In our proposed method even at large viewing angle, we can obtain adequate depth perception similar to the conventional one within interocular distance of narrow viewing zone. This results in viewing zone expansion from 2 degrees to 16.7 degrees.

H48-4 10:05~10:20

Depth Perception at Short Display Time from Long Viewing Distance in Non-Overlapped DFD (Depth-fused 3D) Display

Seishiro Mukaeyama, Rui Takano, Haruki Mizushina, and Shiro Suyama (Tokushima Univ., Japan)

Long-viewing distance 3D display will be promissing for many outdoor applications such as digital signage, street advertising and etc. We consider DFD (Depth-fused 3D) display only composed of layered LED displays is appropriate for such outdoor applications and have proposed Non-overlapped DFD display by solving the problem of non-transparency of LED display. Small-light source was composed of a hole with 6 mm diameters, illuminated by a projector. A high speed shutter in front of projector lens controlled the display time to long time or 10 ms. The luminance ratio between front and rear images was randomly changed in five levels. Perceived depth was estimated by matching the reference image depth with the perceived image depth. Observation distances are 5 m and 10 m. In conclusion, even at short display time of 10 ms, easy depth fusion and appropriate perceive depth dependence can be obtained by enlarging observation distance to 10 m.


H (Room 316~317)



H48-5 10:20~10:35

Large Depth Perception by Monocular Motion Parallax in DFD Display

Kyohei Okamoto, Haruki Mizushina, and Shiro Suyama (Tokushima Univ., Japan)

Not a few people, called stereo-blind, cannot perceive 3D image depths only by using binocular disparity. Even for such stereo-blind people, monocular motion parallax is effective. We have proposed large depth perception in DFD display by using continuous monocular motion parallax for stereo-blind people. DFD display is composed of front and rear images overlapped. There is the problem of depth fusion limit in front-rear gap in DFD with both eyes. When front-rear gap is larger than about 6 arcmin., disparity excessively increases, and difficult to fuse front and rear images. We propose the solution for large depth perception by using monocular motion parallax. In monocular motion parallax, disparity can be maintained to moderate level by controlling head motion width. Experimental, perceived depth was evaluated by moving the reference to the perceived depth position. Result, by using monocular motion parallax, two images can fused to one depth and its perceived depth coincides the theoretical line.


A (Room 211~213)

49 OLED Processes & Device Fabrications

Date: Aug. 31 (Fri.), 2018Time: 11:00~12:20Session Chair: Prof. Malte Gather (Univ. of St Andrews, UK)

A49-1 11:00~11:25

New Display Applications Enabled by High Resolution OLED Frontplane

Paweł E. Malinowski, Tung-Huei Ke (IMEC, Belgium), Atsushi Nakamura (Fujifilm Electronic Materials Europe, Belgium), David Cheyns, Dieter Vander Velpen, Erwin Vandenplas, Kris Myny (IMEC, Belgium), Hylke Akkerman, Auke Jisk Kronemeijer, Jan-Laurens van der Steen (TNO/Holst Centre, Netherlands), Soeren Steudel (IMEC, Belgium), Gerwin Gelinck (TNO/Holst Centre, Netherlands), and Paul Heremans (IMEC, Belgium)

Advances in manufacturing of AMOLED displays have enabled many new applications thanks to free form factor, infinite contrast, vivid colors and low power consumption, also at attractive cost. At the same time, other user interfaces gain importance to enable a fully immersive experience. In this paper, we describe pixel patterning technology using photolithography, providing ultra-high resolution with corresponding high aperture ratio. It also makes it possible to expand the AMOLED platform with other types of pixels. We demonstrated displays with 1250 ppi pixel density with OLED frontplane patterned by photolithography. OLED lifetime after patterning is above 150 hours (T90 at 1000 nit). In the future, combining them with organic photodetectors in the same frontplane might enable in-display biometric recognition. Furthermore, ultrasound transducers incorporation can provide haptic feedback. In this paper, we give an overview of applications that can be envisioned with side-by-side organic patterning by photolithography.

A49-2 11:25~11:50

Equipment for Future Generations of OLED

Xuena Zhang, Jerry R Chen, Soo Y Choi (Display and Flexible Tech. Group, USA), Neil Morrison (Display and Flexible Tech. Group, Germany), Max McDaniel, Peter Nunan (Display and Flexible Tech. Group, USA), Kevin Moraes (Silicon Product Group, USA), and Robert J Visser (Applied Materials, USA)

The Display industry is going to some very rapidchanges; 1) ever increasing resolution for both mobile devices (300-800 ppm)and TVs (4k to 8k and beyond), the need for even much higher resolution in ARand VR devices (>2500 ppi) 2) changing form factors from curved to bendablegoing to rollable and even foldable (while stretchable and creasible still seemfar away, at least for LCD and OLED, micro-LED displays might be more suitablefor this). 3) ever increasing size, TV going from 40 to 70 and mobiledisplays from 4.5 to more than 5.5.


H (Room 316~317)

49 OLED Processes & Device Fabrications

Date: Aug. 31 (Fri.), 2018Time: 11:00~12:20Session Chair: Prof. Malte Gather (Univ. of St Andrews, UK)

A49-3 11:50~12:05

Withdrawal

A49-4 12:05~12:20

Electron Beam Patterning for Realization of RGB Microcavity OLEDs

Elisabeth Bodenstein, Matthias Schober, Stefan Saager, Christoph Metzner, and Uwe Vogel (Fraunhofer FEP, Germany)

Our latest research results demonstrate a new promising concept for OLED patterning that enables high-resolution displays without using shadow masks or color filters. We use a thermal electron beam process for patterning the hole transport layer (HTL). Alternate this electron beam patterning with further HTL depositions we are able to realize an HTL staircase with three different HTL thicknesses on the respective pixels for RGB. When the OLED stack is finalized by on-top evaporation of additional layers the metal electrodes form a staircase of microcavities that enable RGB colors according to the different resonator lengths. Electron beam patterning is applicable to different materials and layer stacks because the distribution of electron energies and penetration depths can be tuned over a vast range. We will present calculated thermal profiles for estimation of the generated temperatures and heat-affected zones as well as a correlation to the feature sizes of patterned organic material.


B (Room 214~216)

50 Transparent/Flexible Displays (Display Backplane)

Date: Aug. 31 (Fri.), 2018Time: 11:00~12:20Session Chair: Dr. Chi-Sun Hwang (ETRI, Korea)

B50-1 11:00~11:25

A Solution Metal Oxide-Driven 27.6-in. Flexible LCD

Yen-Yu Huang (Chunghwa Picture Tubes Ltd., Taiwan)

Instead of the mainstream sputtered IGZO TFT unit, a soluble metal oxide is conducted to be a TFT unit to enhance the display performance. The well-known higher mobility and extremely low leakage current of sputtered IGZO TFT are also identically accomplished in solution metal oxide (SMO) TFT. The performance of BCE type SMO TFT after long time thermo-stress driving exhibits the excellent electric and reliability performances. The micrograph of SMO is also systematically analyzed to support the performances. The manufacturing of flexible SMO-TFT LCD is intuitively feasible by directly utilizing the preexisting a-Si compatible facilities and the Laser Lift Off (LLO) procedure is conducted for the double-side carrier glass removal. We had successfully developed a 27.6-in. flexible LCD device with 1920 x 360 resolution, 500 nits in brightness, FFS mode and the total thickness of panel with ca. 0.4 mm.

B50-2 11:25~11:50

Nano-Film Transfer Technology for Solution-Processed Multilayer Structured OLEDs

Kwan Hyun Cho, Dai Geon Yoon, and Kyung Tae Kang (KITECH, Korea)

Solution-processed organic light-emitting diodes (OLEDs) have attracted broad attention in the fields of display and lighting. However, organic films fabricated by the conventional solution-based spin-coating process and the inkjet printing process still cannot match the quality of the films fabricated by vacuum evaporation [1]. In addition, the synthesis and ink formulation of active organic materials are limited to the capabilities of orthogonal solvents or the cross-linking poperties to create multilayer structured OLEDs [2]. We demonstrate a new type of nano-film transfer technology using intense pulsed light (IPL) to improve the film quality and fabrication of solution-processed multilayer architectures. First, we deposited the active organic films onto an intermediate substrate, thus converting light to heat, using a conventional solution-based spin-coating process, after which the deposited organic film was transferred onto the device substrate through IPL illumination.


B (Room 214~216)

50 Transparent/Flexible Displays (Display Backplane)

Date: Aug. 31 (Fri.), 2018Time: 11:00~12:20 Session Chair: Dr. Chi-Sun Hwang (ETRI, Korea)

B50-3 11:50~12:05

Transparent p-MoTe2 2D Transistor Enabled by an O2-Plasma-Induced MoOx Layer and an Ultrathin Pt Layer as Contact Media

Yongjae Cho, Ji Hoon Park, Minju Kim, Yeonsu Jeong, Jongtae Ahn, Yeonjin Yi, and Seongil Im (Yonsei Univ., Korea)

We have fabricated a transparent p-MoTe2 2D transistor. To improve the performance of the transistor, we applied O2 plasma treatment and deposited an ultra-thin Pt layer between the p-MoTe2 surface and ITO S/D electrodes. Consequently, almost transparent 2D FETs are obtained with a decent mobility of ~5 cm2/V s, a high ON/OFF current ratio of ~105, and 70% transmittance. O2 plasma treatment on the S/D area of p-MoTe2 flake generates formation of MoOx on the surface of p-MoTe2. The induced MoOx layer greatly improves a hole injection characteristics at S/D contacts of the transistor. Using one identical MoTe2 flake, we fabricated two transistors with and without O2 plasma treatment to separately investigate the effect of an O2-plasma-induced MoOx layer on a p-MoTe2 transistor. And, to investigate the mechanism of improvement in a hole injection by O2-plasma-induced MoOx, we conducted UPS measurement. We revealed that a low work function and gap state between the fermi level and the valence band of MoOx result in the improvement.

B50-4 12:05~12:20

Polysulfide Thermosets for Use in Front Plane Applications

Radu Reit, Adrian Avendano, and David Arreaga (Ares Materials, USA)

Front plane materials for display applications have had minor innovation in the previous decade, focusing solely on the use of glass due to its superb thermal, optical and mechanical properties. As the display industry moves to flexible and rollable form factors, glass presents mechanical challenges that cannot be answered. To address these challenges, Ares has developed Pylux: a family of polysulfide thermosetting resins and films for optically-demanding display applications. Owing to a high visible light transparency, low haze, low yellowness and ultra-low birefringence, polysulfide thermosets have been explored in uses as cover lenses, optically clear adhesives and substrates for touch panels and color filters. In this presentation, three separate grades of Pylux polysulfide thermosets are discussed for their multiple optical-path uses and the thermomechanical customization of polysulfide thermosets allowing such uses.


C (Room 217)

51 Low Power & Signage Displays

Date: Aug. 31 (Fri.), 2018Time: 11:00~12:30Session Chair: Dr. Toshihide Kamata (AIST, Japan)

C51-1 11:00~11:25

Retro-Reflective eTIR Technology for ePaper 2.0

Robert Fleming, Sri Peruvemba, Robert Holman, Scott Ferguson (CLEARink Displays, USA), Bram Sadlik, and Thomas Johansson (CLEARink Displays, Canada)

This paper will review the progress of a novel electrophoretic type display with video level switching speeds and high reflected brightness brought about by the exploitation of total internal reflectance from embedded optical structures. The increased reflected brightness is such that standard color filter arrays can be used to produce full color reflective displays.

C51-2 11:25~11:50

Large-Area Flexible Active Matrix Driven Electrophoretic E-Paper and Transferring Technology for Realizing Full-Color Applications

Bo-Ru (Paul) Yang, Li Wang (Sun Yat-Sen Univ., China), Xidu Wang, Dianlu Hu, Yuhu Lin, Xi Zeng, and Yu Chen (Guangzhou OED Tech. Inc., China)

Manipulating the particles movement within the micro-cavity has created a new category of reflective display, termed Electro-Phoretic Display, (EPD). The superior performances of EPD under sunlight ambience and the capability of fabricated with roll-to-roll process has make it as a very unique and critical technology. However, it is still quite difficult to realize the larger area flexible AM-EPD as well as making it full-color. As a result, in this paper, we explored the challenges, and proposed a method to demonstrate a 30 inch flexible AM-EPD with 10 pieces of 8 inch EPD modules, with an effective resolution of 3840 x 2048. The fabrication of flexible EPD panels and the system of splicing-method to large size display are discussed. Also, the plausible method of using transferring technology for realizing full-color EPD is also discussed.


C (Room 217)

51 Low Power & Signage Displays

Date: Aug. 31 (Fri.), 2018Time: 11:00~12:30Session Chair: Dr. Toshihide Kamata (AIST, Japan)

C51-3 11:50~12:15

Performance of Reflective Electro-Wetting Displays in out of Home Applications

Doeke J. Oostra (Etulipa, Netherlands)

Advertisement on digital out of home displays becomes more and more attractive for companies and organizations to communicate with targeted audiences outdoors. Energy consumption and light pollution prohibit that LED displays will become as abundant as paper. Reflective electro-wetting displays can fulfill the need and the requirements for outdoor digital displays, because of their capability to realize high contrast and the possibility to create bright saturated colors using a CMY color approach. Etulipa has the first electro-wetting products going to market that successfully pass all perception tests on readability under all outdoor conditions.

C51-4 12:15~12:30

Free Form Display in Logo Design

Rui Xu, Lei Wang, Yanqing Chen, Jian Sun, and Chenru Wang (Beijing BOE Optoelectronics Tech. Co., Ltd., China)

Free form display, what is a kind of new type product, was used widely in vehicle system. The new type free form display was design not only curved surface but also hollow inside. the border of the module was also slim. The product type used this technology was a company logo applied in exhibition.


D (Room 218)

52 LC Physics

Date: Aug. 31 (Fri.), 2018Time: 11:00~12:30 Session Chair: Prof. Dan Luo (Southern Univ. of Science and Tech., China)

D52-1 11:00~11:25

De Vries Smectics with Large Electro-Clinic Effect in SmA* Phase and Unusual Low-Layer Shrinkage in SmC* Phase – Prospective Materials for the New FLC Displays

Jagdish K. Vij (The Univ. of Dublin, Ireland)

New ferroelectric liquid crystals have been designed, synthesized and characterized using complementary experimental techniques. Mesogen in these liquid crystals is terminated on one side by silane/siloxane or fluorinated chains and on the opposite side, by chains/groups involving chiral carbon atom. It is found that these liquid crystals exhibit de Vries behaviour such as (i) low layer shrinkage of ~1 to 2% at ~20℃ below SmA* - SmC* transition temperature as opposed to ~13% for a conventional ferroelectric liquid crystal (ii) extremely large electro-clinic effect in the SmA* phase, (iii) birefringence decreases with a reduction in temperature in SmA* phaseinstead of increasing with temperature decreasing, and (iv) alow orientational order parameter in both SmA* and SmC* phases especially in the absence of external field, (v) large tilt angle fluctuations in SmA* phase. Measurements of birefringence, electro-optics, IR, Raman and dielectric spectroscopy are carried out. The orientational distribution function in SmA* phase follows diffuse cone model close to the SmA* to SmC* transition temperature where minimum and maximum tilt angles in SmA* phase depend on temperature and the maximum field applied. Plausible reasons for such a behavior are discussed. These materials have the potential for use in the next generation of FLC displays and photonic applications;since zigzag defects arising from layer shrinkage in SmC* are largely avoided.

D52-2 11:25~11:50

Electrical Suppressed Helix Ferroelectric Liquid Crystals for the Field Sequential Color Displays

A. K. Srivastava, Liangyu Shi, V. G. Chigrinov, and Hoi-Sing Kwok (HKUST, Hong Kong)

Ferroelectric liquid crystals (FLCs), because of their fast electro-optical response, are one of the most important classes of liquid crystals. Here, in this talk, we have summarized various electro-optical modes for FLCs with an emphasis on electrically suppressed helix FLC (ESHFLC) that is characterized by high optical contrast ratio (10k:1) at a very small driving voltage (~2-5 V/μm) (see Fig. 1). The unique optical quality of the ESHFLC is highly sensitive to the anchoring energy, which should be comparable but smaller than the elastic energy of the FLC helix. The photo-alignment offers good control on the anchoring energy by means of the controlled irradiation energy, and therefore, it provides optimal anchoring energy for ESHFLCs.


D (Room 218)

52 LC Physics

Date: Aug. 31 (Fri.), 2018Time: 11:00~12:30 Session Chair: Prof. Dan Luo (Southern Univ. of Science and Tech., China)

D52-3 11:50~12:15

The Origin of Optical Nonlinearity of Liquid Crystals Revealed by Transient Grating Imaging

Kenji Katayama (Chuo Univ., Japan)

A colossal optical nonlinearity has been observed for the dye-doped liquid crystals under the condition that the nematic phase is very close to the isotropic condition, and it has been usually explained by the effect of the dye-induced torque on the liquid crystal. However, the direct observation of the photo-response by the time-resolved transient grating phase imaging revealed that the optical nonlinear polarization, causing the extraordinary refractive index change, was observed in the liquid crystal region, where the light was not irradiated. Furthermore, a shock-like wave was observed after this nonlinear response ended. We propose that a compression wave generated at the disordered/ordered interface induced the reorientation of liquid crystal molecules to generate a larger polarization, causing the optical nonlinearity.

D52-4 12:15~12:30

Product Performance of Hybrid Viewing Angle LCD

Shih-Bin Liu, Xiaojun Guo (Shanghai Jiao Tong Univ., China), Chia-Min Yu, Chia-Te Liao, and Te-Chen Chung (Info Vision Optoelectronics (Kunshan) Co., Ltd., China)

Many related research on the viewing-angle switching technology of liquid crystal device (LCD) have been reported, but it is still a technological challenge about one hybrid viewing-angle (HVA) LC panel which possess the mass conditions, such as the conveniences of production, low cost, and so on. We adopt the single cell design that with lower cost, and utilize the optical properties of LC after electrically tilting to achieve this challenge. By applying this principle of the above, we have the capacity to produce these HVA LCD displays of different sizes and take a demo prototype as an example here. These visual performances are perceived at oblique angles (Azimuth = 0o, Polar = 55o) of this prototype in the WVA and NVA mode, which are shown in our attached figure. Optical properties of the LCD on prototype are measured on a Display Measurement Systems (DMS), employing the standard setups. It can observe the comprehensive information of the LCD panel.


E (Room 311~312)

53 High Throughput Display Manufacturing

Date :Aug. 31 (Fri.), 2018Time: 11:00~12:20Session Chairs: Dr. Chiwoo Kim (APS Holdings Corp., Korea, Korea)

Dr. Neetu Chopra (Kateeva®, USA)

E53-1 11:00~11:25

Multi-Material Printing for 3D Electronics

Steve Ready (Xerox Palo Research Center, USA)

In order to expand 3D printing and making it more versatile, new processes are needed that are able to deposit a broader range of materials (plastics of different characteristics, as well as metals), along with embedded electronic circuits consisting of both printed and conventional components. Such printed objects go beyond conventional structural features by embedding optical and electrical functionalities, such as sensors; all in complex structures that are difficult to produce with existing manufacturing methods. Coupled with user-friendly design software it becomes possible to analyze complex designs in order to determine structural properties as well as model electrical and mechanical operation explore materials compatibility and diagnose other aspects of the design which may cause fabrication problems. We have demonstrated printed wireless sensors as examples of complex functional objects. In my presentation I describe our progress in printing integrated multi-material objects, including a collection of our latest demonstrators.

E53-2 11:25~11:50

Printing Technology for Display Manufacturing

Zheng Cui (Chinese Academy of Science, China)

Printing offers an alternative route to OLED panel manufacturing, especially for large size panel. Printing can achieve OLED emission material usage more than 90%, whereas vacuum deposition only has 10%. At the author's Printable Electronics Research Center (PERC) materials and printing processes have been developed for display applications. The materials are thermally cross-linkable electron transport and hole transport materials which can be spin coated or inkjet printed. OLED devices have been fabricated, showing performace comparable to vacuum deposited devices. A novel hybrid printing method has been developed at PERC for making metal mesh as transparent conductive electrode to replace ITO electrode. The metal mesh is hundred times more conductive than ITO at the same transparency and much more flexible than ITO. OLED devices have been fabricated to prove that it can indeed replace ITO as transparent electrode. Other work related to printing fabrication for display applications include printed thin-film transistors based on carbon nanotubes and metal oxide semiconductors, and inkjet printed silver electrodes to drive OLED.


D (Room 218)

53 High Throughput Display Manufacturing

Date :Aug. 31 (Fri.), 2018Time: 11:00~12:20Session Chairs: Dr. Chiwoo Kim (APS Holdings Corp., Korea, Korea)

Dr. Neetu Chopra (Kateeva®, USA)

E53-3 11:50~12:05

No-Show

E53-4 12:05~12:20

Laser-Free Mechanical Debonding of Plastic Films

David Arreaga, Adrian Avendano, and Radu Reit (Ares Materials, USA)

Electronics microfabrication on plastic is a growing area in the display industry, owing to the needs for reduced thickness and increased robustness of display modules. This has primarily been achieved by active-matrix fabrication atop polyimide films. However, the laser lift-off delamination process for these modules is quite expensive due to substantial capital investment for specialized equipment and is difficult to scale to modules above ~6 diagonal due to low yield. Ares Materials has developed a temporary bonding layer, Easybond, which can be formed by a variety of industrial coating techniques, is stable at temperatures in excess of 450 ƃ, and enables a simple mechanical delamination of the flexible substrate from the carrier at the end of the microfabrication process. In this presentation, we will discuss the ease-of-use for Easybond solutions, and explore two case studies of flexible substrates (polyimides and polysulfide thermosets) processed lithographically atop carriers coated with Easybond.


F (Room 313)

54 Perovskite/OPV Solar Cells

Date: Aug. 31 (Fri.), 2018Time: 11:00~12:20Session Chair: Dr. Sohee Jeong (KIMM, Korea)

F54-1 11:00~11:25

Oriented Grains with Preferred Low-Angle Grain Boundaries in Halide Perovskite Films

Jong Hyeok Park (Yonsei Univ., Korea)

Herein, we report a perovskite film with preferred-orientation and enlarged tetragonal grains with low-angle grain boundaries (LAGBs) created by applied stress. Studying relationship between stress and crystalline formation which is introduced in this paper is totally new. In this study, we mainly focused on tailoring perovskite orientation, crystallinity and additionally demonstrated the PSCs employing those positive new finding for the first time. The rheological behavior of the intermediate perovskite films under a directionally applied stress allows us to prepare highly efficient PSCs. An intermediate perovskite film was prepared by spin-coating on either a TiO2 layer for a normal cell or a poly(3,4-ethylenedioxythiophene): polystyrenesulfonate (PEDOT:PSS) layer for an inverted cell. This was followed by thermal annealing at 100℃, during which a uniaxial compression force was applied tothe intermediate perovskite film from a designed hexagonal nanodot array stamping film made of polyurethane (PUA). Noticeably, PSCs with the compressed perovskite films showed preferred-orientation and highly close-packed grains and exhibited highly efficient photovoltaic responses.

F54-2 11:25~11:40

Interfacial Modification of Electron Transport Layer in Planar Perovskite Photovoltaic: A Promising Candidate for Indoor Light Harvesting and Stability of Solar Cells

Meng Li (Soochow Univ., China), Chao Zhao (Swansea Univ., UK), Zhao-Kui Wang (Soochow Univ., China), Wing C. Tsoi (Swansea Univ., UK), Ying-Guo Yang (Chinese Academy of Sciences, China), James R. Durrant (Imperial College London, UK), Liang-Sheng Liao (Soochow Univ., China), and Sagar M. Jain (Swansea Univ., UK)

Perovskite solar cells (PSCs) are attracting significant interest from the scientific community for their promising outdoor performance. Here, we investigate the potential of planar perovskite solar cells for harvesting indoor light for low power consumption devices. 1-butyl-3-methylimidazolium tetrafluoroborate ([BMIM]BF4) is employed as a novel electron transport layer (ETL) in inverted perovskite solar cells. Significantly improves indoor as well as outdoor solar cell performance, obtaining record power conversion efficiency (PCE) of 35.20% (for 0.125 cm2 active area) and 23.16% (for 4 cm2 active area) under fluorescent lamps of 1000 lux, whilst achieving the impressive PCE of 19.30% at 1 sun illumination. It is found that the incorporation of [BMIM]BF4 on PCBM not only alleviate PCBM film formation diminishing the interfacial contacts but facilitates the charge transport and separation at the PCBM/[BMIM]BF4 and the cathode interface through effectively passivating the surface trap states of planar PSCs.


F (Room 313)

54 Perovskite/OPV Solar Cells

Date: Aug. 31 (Fri.), 2018Time: 11:00~12:20 Session Chair: Dr. Sohee Jeong (KIMM, Korea)

F54-3 11:40~11:55

Energy-Level-Tuned N-Type InAs Quantum-Dot Films for Efficient Photovoltaics

Hyekyoung Choi, Jung Hoon Song, Hien Thu Pham, and Sohee Jeong (KIMM, Korea)

InAs quantum dots (QDs) are promising material for photostatics because of near-infrared (NIR) absorption. However, fabrication of conductive InAs QD assemblies is still extremely challenging because of the inherently covalent bonding nature and surface oxidation. Even more seriously, unwanted In2O3 and As2O3 formed on the surfaces during synthesis severely limit the conductivity of the electronic devices. Here, we achieved conductive QD assemblies via two-step surface modification: 1) surface peel-off and 2) passivation of naked QDs with incoming short ligands. Accordingly, we could modulate their energy level positions up to 0.4 eV depending on the surface ligands, which results in efficient charge transport and suppression of interfacial recombination losses when used with p-type PbS QDs in quantum hetero-junction solar cells. We obtained a power conversion efficiency of 7.9%, which is the highest efficiency reported to date for QD solar cells without employing wide-bandgap metal oxides.

F54-4 11:55~12:20

Designing High Ductility Polymers for Stretchable OPVs

Yilin Li, Jonathan Onorato, Wesley Tatum, and Christine K. Luscombe (Univ. of Washington, USA)

Organic semiconductors have been the focus of scientific research because of their interesting (opto)electronic properties and solution processability. They have been successfully employed and extensively studied in the fields of organic photovoltaics (OPVs), organic field-effect transistors (OFETs), organic light-emitting diodes (OLEDs) and organic thermoelectrics (OTEs). As their practical applications have extended into the health and life sciences areas (e.g., electronic skins and artificial muscles), the mechanical compliance (i.e., low stiffness and high ductility) has become increasingly important. This in turn requires one to establish an understanding of the relationship between polymer structure and their mechanical properties as well as their (opto)electronic properties. In this presentation, the synthesis of a series of indacenodithiophene-based semiconducting polymers will be discussed along with the feasibility of using these polymers in stretchable devices.


G (Room 314~315)

55 Oxide Transistors II

Date: Aug. 31 (Fri.), 2018Time: 11:00~12:35Session Chairs: Dr. Min Suk Oh (KETI, Korea)

Prof. You Seung Rim (Sejong Univ., Korea)

G55-1 11:00~11:25

Multi-Layer Metal Oxide Channel Thin-Film Transistors

Dong Yoon Khim, Yen-Hung Lin (Imperial College London, UK), Hendrik Faber, and Thomas D. Anthopoulos (KAUST, Saudi Arabia)

This presentation discuss an alternative strategy to materials development based on low-dimensional, solution-processed multilayer metal oxide systems and their application in TFTs with performance characteristics beyond the state-of-the-art. In particular, I will describe how ultra-thin layers (<10 nm-thick) of various metal oxides can be grown from solution at temperatures ranging from room temperature up to 200 ƃ using a combination of conventional thermal annealing and advanced photonic processing techniques. Emphasis will be placed on the use of photonic-based processing approach for ultra-fast (sub-second) chemical conversion of various oxide precursors to high quality semiconducting, dielectric and conducting layers and their implementation in high electron mobility and low-operating voltage (<2 V) multilayer transistors.

G55-2 11:25~11:50

Solution-Processed Oxide TFTs for Sensors

You Seung Rim (Sejong Univ., Korea)

New materials and devices-based sensor platforms have been attracting attentions in internet of things (IoTs), and wearable healthcare monitoring. Among sensing parameters, the sensitivity is a crucial factor to realize non-invasive body signal monitoring or proximity sensing interfaces. At this point of view, we proposed solution-processed quasi-two dimensional (quasi-2D) metal oxide semiconductors, which has few nanometer thick film (~4 nm). Thus, this film showed ultrahigh sensitivity for the interaction of biomolecules or light incidence. Based on this film, we demonstrated quasi-2D In2O3-based electrochemical transistors, which was utilized for glucose and dopamine sensing by immobilizing glucose oxidase or dopamine sequenced aptamers. We also demonstrated bulk-hetero junction polymer embedded quasi-2D IGZO phototransistors with the detection ranges of UV-Vis-NIR region. PBDTT-DPP:PC61BM/IGZO phototransistors not only showed the charge transfer of electrons regarding threshold voltage changes but also increased the off-current by the photoconductivity of PBDTT-DPP:PC61BM with the exciton dissociation at the interface under the light.


G (Room 314~315)




G55-3 11:50~12:05

Low Temperature Activation of Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sodium Hypochlorite

Won-Gi Kim, Young Jun Tak, Yeong-Gyu Kim, Jeong Woo Park, Hyuk Joon Yoo, Hyung Tae Kim, and Hyun Jae Kim (Yonsei Univ., Korea)

We proposed a novel material, named sodium hypochlorite (NaClO), as a source of activation for amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). We could reduce the activation temperature from 300℃ to 150℃ by using NaClO. We could also improve the electrical characteristics and stability of a-IGZO TFTs, simultaneously. The field effect mobility increased from 11.38 to 14.63 cm2/V.s, the on-off ratio increased from 1.09×1010 to 3.71×1010, and the threshold voltage shifts under positive bias stress test decreased from 5.01 V to 2.55 V (VG = 20 V and VD = 10.1 V for 10000 s). Furthermore, we elucidated the mechanism of NaClO activation for a-IGZO TFTs through light and thermal effects.

G55-4 12:05~12:20

Study on the Effect of Dry Etching Damage in BCE Oxide Thin-Film Transistors

Ji Hun Choi, Jong-Heon Yang, Jae-Eun Pi, Chi-Young Hwang, Kyung Hee Choi, Hee-Ok Kim, and Chi-Sun Hwang (ETRI, Korea)

As the display industry develops, there is a growing demand for ultra-high resolution display. Accordingly, formation of a very small unit pixel becomes very important, and it is indispensable to apply the dry etching process. In the process, it is inevitably accompanied by physical damage and is more serious in the back-channel etched (BCE) thin-film transistor. However, no in-depth study on the issue has been conducted. In this study, we investigated the physical phenomena occurring in the channel layer when dry etching the source/drain layer in the BCE device. The damage on channel by dry etching process was examined by XPS analysis. Additionally, a very simple treatment process was applied to alleviate the damage. As a result, it was observed that the damaged channel surface was restored to almost the same as immediately after the channel layer deposition. By this way, the performance of the device was remarkably improved.


G (Room 314~315)




G55-5 12:20~12:35

Metal Electrodes-Induced Green Laser Activation for Indium Gallium Zinc Oxide Thin Film Transistors

Jeong Woo Park, Won-Gi Kim, Hyuk Joon Yoo, Hyung Tae Kim, and Hyun Jae Kim (Yonsei Univ., Korea)

We proposed high-energy green laser irradiation as a new technique for the activation of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). Compared with a-IGZO TFTs fabricated at 300 ƃ, green laser-activated a-IGZO TFTs without any thermal annealing process showed superior characteristics: field effect mobility of 6.88 cm2/Vs, subthreshold swing of 0.29 V/dec, and on/off ratio of 6.95 x 109. These improvements were attributed to selective heat absorption for gate, source, and drain metal electrodes with selective laser irradiation. The thermal energy converted by the laser irradiation selectively activated a-IGZO films without thermal damage to flexible substrates.

•When: 2019. 06.18 (Tue)

•Venue: Intercontinental Hotel (Seoul, Korea)

•Special Program

- Announcement of Top 20 technologies (Display History Wall)

- 20-year pictorial slide show

- Lectures by international display legends

- Entertainment (congratulatory performance, prize draw, etc.)

20th Anniversary ofThe Korea Information Display Society (KIDS)

For more detail information:

+82-2-563-7962 (Phone), [email protected] (E-mail)

• Email. [email protected] • Tel. +82-2-563-7992 • Fax. +82-2-556-3396 • Web Site. www.imid.or.kr

SecretariatThe Korean Information Diaplay Society (KIDS)

2019

2019August 27~30, 2019 / HICO, Gyeongju, Korea

Welcome! Next will be held in

Gyeongju, Koreafrom August 27 to 30, 2019.

IDW '18

The 25th International Display Workshops

Dec. 12 – 14, 2018

Nagoya Congress Center Nagoya, Japan

http://www.idw.or.jp/


H (Room 316~317)

56 Applications of 3D Displays

Date: Aug. 31 (Fri.), 2018Time: 11:00~12:35Session Chair: Dr. Soon-Gi Park (LetinAR, Korea)

H56-1 11:00~11:25

The Application of 3D Virtual Fish to the Study about Fish Cognition

Masaki Yasugi and Eiji Watanabe (NIBB, Japan)

The use of virtual animals in the cognition studies is drawing attention in recent years. We created the virtual medaka fish which imitates the appearance and motion of real medaka fish, and revealed that medaka fish recognize the natural color, shape and motion of conspecifics and show their social behaviors accordingly, by observing their response to the 3D virtual medaka fish presented on LCD monitor. Furthermore, we discovered that medaka fish strongly respond to the virtual fish turning its face toward them, which can partly explain the attractiveness of the motion. We expect that the role of visual information on the fish cognition will become more and more apparent, as the technology for the creation and presentation of 3D virtual fish advances.

H56-2 11:25~11:50

Application of 3D Display Based on Motion Parallax to Research of Animal Behavior

Nozomi Nishiumi and Eiji Watanabe (NIBB, Japan)

To examine visual perception capability of animals, researchers have employed a variety of techniques that involve the use of dummies, video playbacks, and computer animations. Recently, providing interaction in computer animations has gotten increasing attention in animal research. This interaction shows flexible visual stimuli according to behavioral states of target animals, by feedbacking the motion of the target to rendering animation in real time. With this concept, various behavioral contexts based on interaction between animals can be reproduced between the animal and the display. Moreover, the display is able to present a motion parallax image, which is an important factor in providing a three dimensional view. In this conference, we will introduce an example of the system by presenting an interactive visual stimuli to fish. We will also present advantages for behavioral study as well as limitations due to perceptual and ecological characteristics of target animals.


H (Room 316~317)


Date: Aug. 31 (Fri.), 2018Time: 11:00~12:35Session Chair: Dr. Soon-Gi Park (LetinAR, Korea)

H56-3 11:50~12:05

Pixel-Matched Pickup Corresponding to Multi-View Display with Side Mirrors

Minwoo Jung, Beomjune Kim, Chanhee Lee, Sungjin Lim, and Joonku Hahn (Kyungpook Nat'l Univ., Korea)

Among three-dimensional (3D) displays, multi-view displays have been studied popularly since they provide 3D contents with high quality to observers. One of most famous multi-view displays is Holovizio manufactured by Holografika. In this system, mirrors are placed on both sides behind of the anisotropic diffusing screen and they provide the advantage of efficiently shaping Wigner distribution function (WDF). In general, the pixel-matched pickup method for multi-view display without side mirrors was proposed with 4f optics. However, in the case of multi-view display with side mirrors such as Holovizio, simple application of 4f optics doesnt work since the rays reflected by the side mirrors dont be captured by the camera. In this paper, we propose a pixel-match 3D pickup method corresponding to multi-view display with side mirrors. This system is designed with camera array where each camera captures image proper for individual projector comprising the multi-view display with side mirrors.

H56-4 12:05~12:20

Fourier Peplography – Real-Time Passive 3D Imaging through Scattering Media by Optical Signal Processing

Myungjin Cho (Hankyong Nat'l Univ., Korea)

Conventional peplography which is a Greek word and means veiled imaging can visualize the scene through the scattering media by Gaussian random process and photon counting imaging. However, its processing speed is very slow because of the statistical estimation of the scattering media and the numerical approach of photon counting imaging with many photons. In addition, since numerical photon counting process is statistically random and it utilizes Gaussian random process globally in the local scattering media, it may cause artifacts of the reconstructed image. Therefore, in this paper, we propose a novel real-time 3D image visualization approach through the scattering media. Our approach analyzes and processes the scattered scene in Fourier domain by use of optical signal processing, denoted as Fourier peplography. To show the feasibility of our proposed method, we implement optical experiments and numerical reconstruction, including passive 3D integral imaging with optical signal processing.


H (Room 316~317)


Date: Aug. 31 (Fri.), 2018Time: 11:00~12:35 Session Chair: Dr. Soon-Gi Park (LetinAR, Korea)

H56-5 12:20~12:35

Study on Lossless Compression of Hologram Data

Duk Hyun Kim and Yuji Sakamoto (Hokkaido Univ., Japan)

The data compression coding process is essential for realizing a digital hologram broadcasting service system. This paper discusses the application of lossless compression techniques to CGH(Computer-Generated Hologram)-based hologram data. A CGH was calculated based on the Fourier transform optical system for two types of objects (USAF, T-Pot), and the point-based method was used to calculate the object light to generate an interference pattern within the CGH. In an experiment, three lossless compression schemes were applied to the acquired hologram: huffman encode, run-length encode, DPCM (differential pulse code modulation). As a result of the experiment, the compression rate in general was in the range of approximately 40 to 85%. In particular, DPCM showed approximately 20-30% higher results than that by the other two compression schemes.


A (Room 211~213)

57 OLED New Applications

Date: Aug. 31 (Fri.), 2018Time: 15:50~17:20Session Chair: Prof. Dongwook Kim (Kyonggi Univ., Korea)

A57-1 15:50~16:05

Color-Tunable Organic Light-Emitting Diodes with a Vertically Stacked Structure for High-Resolution Displays

Hyunkoo Lee, Sukyung Choi, Byoung-Hwa Kwon, Chun-Won Byun, Hyunsu Cho, Jun-Han Han, Jong-Heon Yang, Jin-Wook Shin, Chi-Sun Hwang (ETRI, Korea), Eungjun Kim, Seunghyup Yoo (KAIST, Korea), and Nam Sung Cho (ETRI, Korea)

In this work, we report color-tunable OLEDs with vertically stacked red (R), green (G), and blue (B) elements. In order to reduce the pattern-size of the color-tunable OLEDs, a photolithography process was used for the intermediate electrodes patterning. Through the low-temperature process and the introduction of the passivation layer, the transparent intermediate electrodes can be successfully patterned without damage of the lower element. The R, G, and B elements in the color-tunable OLEDs are independently controlled, which make various colors through mixing of each color.

A57-2 16:05~16:30

OLEDs and FETs with Near Infrared Emission beyond 1000 nm

Arko Graf, Caroline Murawski (Univ. of St Andrews, UK), Martin Held, Yuriy Zakharko (Univ. Heidelberg, Germany), Laura Tropf (Univ. of St Andrews, UK), Jana Zaumseil (Univ. Heidelberg, Germany), and Malte C. Gather (Univ. of St Andrews, UK)

OLEDs emitting further in the nIR - at wavelengths beyond 800 nm - would facilitate a range of new applications, e.g. in bio-imaging, skin treatment, optical communication and night-vision. However, very few organic materials emit in this spectral range and the ones that do often suffer from poor emission efficiency. Here, we demonstrate nIR-emitting OLEDs based on solution-processed semiconducting SWCNTs as the active emitter material, combined with doped charge transport layers. For optimized stacks, the emission is exclusively in the nIR (>1000 nm) and shows narrow linewidth (<50 nm FWHM). SWCNTs show highly horizontal orientation of transition dipoles, resulting in a 60 % increase of light outcoupling efficiency. We also use SWCNTs in a microcavity-integrated light-emitting field-effect transistor (LEFET) to achieve efficient electrical pumping of exciton-polaritons at room temperature. Exciton-polaritons are hybrid light-matter particles that can generate coherent laser-like emission and may lead to electrically pumped organic polariton lasers.


A (Room 211~213)

57 OLED New Applications

Date: Aug. 31 (Fri.), 2018Time: 15:50~17:20Session Chair: Prof. Dongwook Kim (Kyonggi Univ., Korea)

A57-3 16:30~16:55

Organic Light-Emitting Diodes for Optogenetic Stimulation with High Spatial Resolution

Changmin Keum, Caroline Murawski, Andrew Morton, Yali Deng, Gareth Miles, Stefan R. Pulver, and Malte C. Gather (Univ. of St Andrews, UK)

Optogenetics is an emerging biophotonics technology that allows to provoke or inhibit neuronal activity in living tissue or behaving animals with light. The typical light sources used to deliver light to the target cells such as lasers, inorganic light-emitting diodes, or optical fibres are able to provide sufficient temporal control, however, achieving sufficient spatial control to stimulate individual cells in a high-precision manner still remains challenging. In this contribution, we present a new light source for optogenetic stimulation that is based on the organic light-emitting diode (OLEDs) technology. Making use of high-brightness blue OLED stacks, we demonstrate micro-structured OLEDs for high spatial resolution stimulation and thus sequential switching between targeted cells. We also propose an approach to ultra-durable thin film encapsulation that can effectively protect OLEDs while operating in cell culture medium. This work is expected to pave the way towards utilizing the unique properties of OLEDs, such as bio-compatibility, color tunability, and high-resolution spatial control, for optogenetics.

A57-4 16:55~17:20

Energy Level Alignments in Organic Electronic Devices

Yeonjin Yi, Hyunbok Lee, and Minju Kim (Yonsei Univ., Korea)

Energy level alignments in organic electronic devices is of great importance. Electronic properties of devices are determined decisively by the electronic structures of materials of interests. In addition, multilayered structures of organic devices emphasis the interfacial electronic structures again. However, direct measurements/analysis on the electronic transport levels have been focused on academic research but not on the real world research and development. Current development stage of organic devices is quite matured and precise control of transport level is highly requited. Therefore, proper measurements and understanding on the electronic structure of organic materials as well as the interfacial energy level alignments are of great importance. Here, direct and inverse photoelectron spectroscopy techniques will be introduced with an emphasis on their usefulness for the transport level measurements and two measurement results on the charge generation layer (HAT-CN) in OLED and inorganic hole injection layer (CuSCN) will be presented.


B (Room 214~216)

58 Transparent/Flexible Displays (Materials & Processes)

Date: Aug. 31 (Fri.), 2018Time: 15:50~16:55Session Chairs: Prof. MunPyo Hong (Korea Univ., Korea)

Dr. Pavel Kudlacek (Holst Centre TNO, Netherlands)

B58-1 15:50~16:15

2D Material Based Light Source

Young Duck Kim (Kyung Hee Univ., Korea)

Two-dimensional (2D) materials such as graphene, hexagonal boron nitride (hBN) and transition metal dichalcogenide semiconductors (TMDC) including MoS2, WSe2 have emerged as promising materials for next generation atomically thin nanophotonics and flexible/transparent optoelectronics applications due to superior electronic, optical, mechanical properties. In this talk, I will present the various 2D van der Waals heterostructure based electrically driven light sources including graphene, TMDC semiconductors and hBN. Especially, graphene based light source with hBN encapsulation layers exhibits ultrafast light pulse generation up to 10 GHz bandwidth with broad spectral range from visible to near-infrared. The ultrafast light pulse generation and unique heat dissipations in graphene results from ultrafast charge-carrier dynamics and weak electron and phonon bath decoupling. Strong light-matter interaction in van der Waals heterostructure interfaces also provide the efficient and direct electronic cooling pathway via near-field hybrid graphene plasmon-hBN phonon polaritonic modes.

B58-2 16:15~16:40

Highly Sensitive and Mechanically Decoupled Pressure and Strain Sensors for Application in Tactile Panels

Steve Park (KAIST, Korea)

We propose the use of microporous structures to fabricate 1) highly sensitive, large sensing range pressure sensor with low hysteresis and 2) strain sensor with no-response to applied pressure. Our pressure and strain sensors can easily be coated onto irregularly shaped 3-dimensional objects (e.g. robotic hand), or be attached to human joints, to detect bending motion. Furthermore, our sensors can be used to differentiate between shear stress and normal pressure. These demonstrations make our sensors highly unique and important for the future development of high performance tactile sensors.


B (Room 214~216)

58 Transparent/Flexible Displays (Materials & Processes)

Date: Aug. 31 (Fri.), 2018Time: 15:50~16:55Session Chairs: Prof. MunPyo Hong (Korea Univ., Korea)

Dr. Pavel Kudlacek (Holst Centre TNO, Netherlands)

B58-3 16:40~16:55

Light Extraction of Low–Cost Flexible Integrated OLED Substrates Manufactured by Printing Process

Doo-Hee Cho, O Eun Kwon, Young-Sam Park, Jungyun Kwon, Jaehyun Moon, Chul Woong Joo, Hyunsu Cho, Byounggon Yu, and Nam Sung Cho (ETRI, Korea)

We developed the flexible integrated substrates for highly efficient OLED lighting panels with scattering polymer layer and printing process. We used two kind of processes for flexible integrated substrate. To fabricate the first, a screen printing, a copper plating, and a bar coating were used. To fabricate the second, a gravure off-set printing and bar coating were used. EQEs of the OLEDs with the scattering polymer layer were enhanced by 65% and 68% at the first case and the second case, respectively. These processes are expected to reduce the price of highly efficient flexible OLED lighting panels significantly.


C (Room 217)

59 Novel Flexible and Printed Devices

Date: Aug. 31 (Fri.), 2018Time: 15:50~17:10Session Chairs: Dr. Seong-Deok Ahn (ETRI, Korea)

Prof. Bo Ru Yang (Sun Yat Sen Univ., China)

C59-1 15:50~16:15

Flexible Touch Imaging Sheet Sensor Developed by Advanced Printed Electronics Technology

Toshihide Kamata, Shusuke Kanazawa, Taiki Nobeshima, Sei Uemura, Manabu Yoshida, Hirobumi Ushijima (AIST, Japan), Hitoshi Kondoh, Shinichi Nishi, and Yasuyoshi Mishima (JAPERA, Japan)

We have developed a flexible sheet sensor array which provide us an imaging data of pressure distribution on the sheet sensor. The flexible sheet sensor system is consisting of a flexible pressure sensor array and TFT back plane. The sensor was prepared on a flexible film substrate by newly developed advanced printed electronics technology with low process damage. The developed flexible sheet sensor was applied to the robot skin, seat sensor of a chair and so on. The obtained imaging data of pressure distribution is useful to provide a information at the surface condition (Identification and detection).

C59-2 16:15~16:40

Fibertronic Approach for Wearable AMOLEDs

Kyung Cheol Choi, Seonil Kwon, and Jeong Woo Park (KAIST, Korea)

Here we present advanced fiber-based OLEDs fabricated using an all-solution process for reel-to-reel manufacturing, and also report a fiber-based oxide thin-film transistor (TFT), which is the second of the two essential electronic devices for wearable active-matrix OLEDs (AMOLEDs). The fiber-based oxide TFT was fabricated by conventional methods including sputter, thermal evaporator and thermal atomic layer deposition systems that are used to produce planar oxide TFTs. Since batteries are limited in wearable devices, power consumption is a crucial factor to consider when developing wearable devices. In this respect, a TFT that functions as a switch to control the current flowing to turn each individual pixel on or off, is very important for reducing power consumption in wearable displays. We anticipate that our approach and results will provide a new route for future fiber-based wearable AMOLEDs.


B (Room 214~216)

59 Novel Flexible and Printed Devices

Date: Aug. 31 (Fri.), 2018Time: 15:50~17:10Session Chairs: Dr. Seong-Deok Ahn (ETRI, Korea)

Prof. Bo Ru Yang (Sun Yat Sen Univ., China)

C59-3 16:40~16:55

Withdrawal

C59-4 16:55~17:10

Stretchable Organic Light Emitting Diodes: A Novel Architecture Based on a Low Young’s Modulus Stress-Relief Layer

Taehyun Kim, Hyeonwoo Lee, Jaeho Lee, Hanul Moon, and Seunghyup Yoo (KAIST, Korea)

Due to the elastic or moving nature of the human skin and body parts, those body-attachable devices including information displays are preferred to exhibit a certain degree of stretchability. However, due to the lack of stretchable semiconductors and transparent conductors, stretchable displays using OLEDs are difficult to realize and, if any, less efficient than rigid or flexible OLEDs. Development of materials that are stretchable must be continued, but realizing a stretchable platform that meets the stretchability and performance requirements, at the same time. In this work, we propose stretchable OLEDs that are formed on a plurality of rigid isolation islands connected via serpentine interconnectors. Underneath the rigid platforms, a low Youngs modulus (Y) layer is introduced to relieve mechanical stress of devices grown on top of rigid isolation lands. Upon use of very low-Y medium, applied strain on rigid islands and interconnectors are greatly reduced. Stretchable OLEDs based on this electrodes also can be stretched 140-150% without a significant drop in the electrical characteristic and brightness.


D (Room 218)

60 High Performed LCD Technologies

Date: Aug. 31 (Fri.), 2018Time: 15:50~17:25Session Chair: Prof. Chang-Je Yu (Hanyang Univ., Korea)

D60-1 15:50~16:15

Technological Evolution for the Homeotropic Alignment of Nematic Liquid Crystals

Shin-Woong Kang, Aboozar Nasrollahi, Vineet Kumar, Le Gia Trung, and Avinash Kumar Rella (Chonbuk Nat'l Univ., Korea)

The homeotropic polyimides (PIs) have been using for various VA-LC modes, such as multidomain VA (MVA), patterned VA (PVA), polymer stabilized VA (PSVA), surface stabilized VA (SSVA). For high performance TV applications, multidomain alignment and fast response time are essential requirements so that the VA-LC mode was continuously evolved based on new alignment techniques. The commercialized VA-LC modes so far essentially have been relied on the homeotropic PIs. Recently, a few different types of PI-less VA modes have been developing by employing additives doped to LC host. The functional additives produce vertical alignment without using pretreated polymer layers. The vetical alignment can be spontaneously induced by the additive (i.e., self-aligned VA). In situ treatment of the additives may result in VA-LC without using PIs (i.e., PI-less in situ VA). This can be further manipulated to achieve multidomain tilted VA with no slit-patterns. The technological evolution of VA-LC technology and latest advances in PI-less VA-LC will be discussed during presentation.

D60-2 16:15~16:40

High-Reflective Colorful Films Based on Multi-Layer Cholesteric Structures

Yong Li and Dan Luo (Southern Univ. of Science and Tech., China)

In this paper, we demonstrate all-solid super-reflective films based on multi-layer helical structure. The films is formed by a wash-out and refill process to refill the optical adhesive into two cholesteric films with opposite handedness. Super-reflectivity over 80% for all red, green, and blue colors has been achieved. Based on the proposed films, static displays with vivid colors are demonstrated by directly printing liquid crystals/monomers mixture as inks on glass/flexible substrates.


B (Room 214~216)

60 High Performed LCD Technologies

Date: Aug. 31 (Fri.), 2018Time: 15:50~17:25 Session Chair: Prof. Chang-Je Yu (Hanyang Univ., Korea)

D60-3 16:40~16:55

No-Show

D60-4 16:55~17:10

Design of Achromatic Wide-View Circular Polarizer with Normal- Dispersion Films

Seung-Won Oh, Sang-Hyeok Kim, Jong-Min Baek, and Tae-Hoon Yoon (Pusan Nat'l Univ., Korea)

In this paper, we propose an achromatic wide-view circular polarizer using normal-dispersion films to eliminate the light reflection over the entire polar and azimuth angles. We use three uniaxial films with different dispersion characteristics so that they can compensate each other to achieve the desired achromatic effective phase retardation. The retardation values can be optimized with the aid of the Poincaré sphere. Zero or negative dispersion films are not used, which are incidentally difficult to fabricate and very expensive for practical display applications.

D60-5 17:10~17:25

Sub-Millisecond Switching of VA-LCD via 2-D Virtual Confinement

Tae-Hoon Choi, Byoung-Gyu Jeon, Su-Min Do, and Tae-Hoon Yoon (Pusan Nat'l Univ., Korea)

In this presentation, we report a method for achieving sub-millisecond switching of liquid crystals (LCs), which is based on the two-dimensional (2-D) confinement effect of LCs. When an in-plane electric field is applied to a vertical alignment (VA) cell, virtual walls are built at the center of interdigitated electrodes and the middle of the gaps between them. The LC molecules are 2-D confined not only by two substrates but also by the virtual walls. Therefore, we can achieve sub-millisecond switching of vertically-aligned LCs simply by using interdigitated electrodes with a short pitch. We experimentally obtained a sub-millisecond response time in the VA cell. The measured turn-on and turn-off times of the fabricated VA-FFS cell was 0.33 ms and 0.41 ms, respectively.


E (Room 311~312)

61 Ink Printing in the Display Manufacturing

Date: Aug. 31 (Fri.), 2018Time: 15:50~17:10Session Chair: Dr. Sung Haeng Cho (ETRI, Korea)

E61-1 15:50~16:15

Inkjet Printing Technology for Display

Seog Soon Kim, Hyun Surk Kim, Jong Gyun Lee, and Chang Woo Seo (UniJet Co., Ltd., Korea)

Inkjet technology has penetrated various applications of display manufacturing. But its applications are used for the overall coating or low printing accuracy applications up to now. Since the accuracy and reliability of the inkjet printing technology used in display manufacturing was considered as the big issues. The conventional printing accuracy of the inkjet technology was mentioned around 10 to 15 depending upon the printing condition. Now the advanced inkjet technology, which is mainly MEMS head technology, head control method and optimized inkjet process, has been applied for more accurate, uniform and reliable printing than before. So the printing accuracy of the new inkjet technology has achieved up to 2 micro lens gap for micro lens array without any specific micro lens position zone defining treatment. The reliability of the inkjet is also improved a lot. The variation of the droplet size was maintained below 0.1 μm for 24 hours. And the tolerance was within 0.09%

E61-2 16:15~16:40

Advanced Inkjet Printing: A Disruptive Manufacturing Equipment Solution for Enabling Next-Generation Displays

Neetu Chopra, Ranjana Shah, Ed Wrzesniewski, Amit Babel, Alex Ko, Shandon Alderson, and Chris Hauf (Kateeva®, USA)

Kateeva is a market leader in inkjet equipment and process solutions for OLED displays. The companys YIELDjet® platform has already demonstrated high-performance printing for the organic Thin Film Encapsulation (TFE) layer in mass production of mobile OLED displays. Since its market introduction in 2016, Kateevas TFE system, known as the YIELDjet® FLEX, has delivered millions of flexible mobile OLED products with near-zero yield loss. Key factors for the success of the YIELDjet® FLEX system are discussed. In addition, pixel patterning of active OLED materials using Kateevas inkjet printing solution, will also be discussed.


E (Room 311~312)

61 Ink Printing in the Display Manufacturing

Date: Aug. 31 (Fri.), 2018Time: 15:50~17:10Session Chair: Dr. Sung Haeng Cho (ETRI, Korea)

E61-3 16:40~16:55

A Hybrid Electrohydrodynamic (EHD) Jet Printing Method for High Speed Vector Printing

Kye-Si Kwon and Thanh Huy Phun (Soonchunhyang Univ., Korea)

Vector line printing using single nozzle has been widely used for most EHD printing applications since a single nozzle is commonly used. However, the application has been limited to low-speed printing due to two major drawbacks: jetting frequency limitation and non-uniform line width near the end points where line printing starts and ends. At end points of line vector printing, the deposited drop amount is likely to be significantly large compared to the rest of the printed lines, due to unavoidable acceleration and deceleration. To overcome the limitations, we will propose so-called hybrid EHD printing, which is capable of both high speed printing and on-off control of jetting via jetting trigger signal as shown in Fig. 1. For this purpose, the proposed method uses the controllability of the shape of deposited droplet by adding proper amount of polymer in ink. Also, the end point amount was controlled via two encoders in the x and y directions.

E61-4 16:55~17:10

Capillary-Induced Ink Transfer Technology for the Fabrication of High Resolution OLED Displays

Dai Geon Yoon, Ho-Nyun Lee, Yong-Cheol Jeong, Jun Young Kim, Hanchul Cho, Young Min Park, Kyung Tae Kang, and Kwan Hyun Cho (KITECH, Korea)

To fabricate full-color organic light-emitting diodes (OLEDs), a fine metal mask (FMM) is considered as the main method for the patterning of the organic emitting layer (EML). However, this method is associated with challenges related to the realization of high resolutions, such as VR (virtual reality) resolution. Ink-jet printing has garnered considerable attention due to its low cost and large area processing capabilities, but there are critical limitations with regard to feature size with dot diameters of 10-30 μm We present a capillary-induced ink transfer method which achieves a breakthrough in the fabrication of high-resolution full-color OLEDs. First, fine stripe shapes of the emitting layer (EML) were deposited into a capillary micro-channel by means of inkjet printing. Also, we controlled the wettability between the bank and bottom of the capillary micro-channel using a selective surface treatment.


F (Room 313)

62 Next-generation Energy Devices

Date: Aug. 31 (Fri.), 2018Time: 15:50~17:00Session Chair: Dr. Younghoon Kim (DGIST, Korea)

F62-1 15:50~16:15

Thermoelectric Properties of Thermally Reduced Graphene Oxide Observed by Tuning Energy States

Hyunjung Lee (Kookmin Univ., Korea)

In this study, the charge-carrier transport properties of TrGO were investigated as functions of the reduction temperature. Most importantly, we found that the Seebeck coefficients of TrGO can be changed by controlling the reduction temperature, which induces a shift from ECNP to EF without doping with impurities or other elements. According to the modified Motts equation, the Seebeck coefficient changed sign at the CNP and its magnitude depended on the energy level (Vg). For comparison, the actual Seebeck coefficient was measured in TrGO bulk films. Both the Seebeck coefficients calculated by Motts equation at EF (Vg = 0 V) and the measured Seebeck coefficients in bulk films exhibited similar behaviors, namely, their absolute values decreased and reached zero at a sufficiently high reduction temperature. In conclusion, we found that controlling the positions of EF and CNP in rGO is important for determining the Seebeck coefficient in metallically conducting rGO.

F62-2 16:15~16:30

Wide Voltage Ranged and Efficient Power Conversion in Display Power System

Satoshi Ikeda (Panasonic Corp., Japan) and Fujio Kurokawa (Nagasaki Inst. of Applied Science, Japan)

This paper proposes a new display power system with a variable dc voltage bus for photo-voltaic energy source or rechargeable energy storage. A novel isolated boost full bridge dc-dc converter with a low loss active snubber is featured in this system to obtain wide input/output voltage range and fault tolerance compared to conventional techniques, while it takes maximum power from renewable energy sources. To verify the feasibility of the proposed scheme, a converter prototype is developed and tested.


F (Room 313)

62 Next-generation Energy Devices

Date: Aug. 31 (Fri.), 2018Time: 15:50~17:00Session Chair: Dr. Younghoon Kim (DGIST, Korea)

F62-3 16:30~16:45

Self-Powered All-Flexible Luminescent Electronics Using a High-Performance Thin-Film Energy Harvester

Seung Hyung Lee, Dae Yong Park, Han Eol Lee, and Keon Jae Lee (KAIST, Korea)

Energy-harvesting technology using mechanical energy is an attractive approach to sustainable operation of various flexible electronic devices. The new concept of a self-powered fully-flexible luminescent system using a piezoelectric energy harvester has been established through flexible vertical light emitting diodes (f-VLEDs). The f-VLEDs realized by anisotropic conductive film (ACF) bonding and whole wafer etching present great performances under mechanical deformation. With the laser lift-off (LLO) process, it is possible to manufacture a high-performance energy harvester in a safe manner. Specially, the LLO process has advantages of to fabricate the flexible and robust piezoelectric devices, without deterioration of piezoelectric properties. In this work, self-powered fully-flexible luminescent system can be achieved by the electricity generated from the thin-film energy harvester by applying small amount of biomechanical energy with no external energy supplies. This conceptual self-powering technology converting mechanical energy into electrical energy can pave the way for various, self-powered, bio-compatible applications, as well as mobile and wearable applications.

F62-4 16:45~17:00

High-Performance Textile Polymer Solar Cells Enabled by Plasmonically Designed Nanomaterials

Seok Ho Cho (Chonnam Nat'l Univ., Korea), Kyung Cheol Choi (KAIST, Korea), and Sung-Min Lee (Kookmin Univ., Korea)

Here we present a type of wearable polymer solar cells (PSCs) with the enhanced performance by simply embodied, plasmonic nanostructures on commercially available textile substrates. To overcome incompatible properties of woven fabrics (i.e. textile) including uneven surfaces and water permeability, a process for the planarization and encapsulation was implemented with organic/inorganic multilayers. On the manipulated textile substrate, silica nanoparticles were randomly spread, which created a nanostructure consisting of randomly distributed elliptical hemispheres at a sebsequently deposited, bottom metallic electrode. A form of dielectric/metal/dielectric multilayer optimized for the high transmittance was employed as a transparent and flexible top electrode. Due to the surface plasmon resonance excited at the nanostructured bottom electrode, the photon absorption of the active layer was considerably augmented. With an additional benefit of mitigating the electrical ohmic loss, the power conversion efficiency of ~8.71% was achieved at the nanostructured textile PSCs, which efficiency level was 1.2 times higher than that of the planar device with otherwise same structure.


G (Room 314~315)

63 Si Transistors II

Date: Aug. 31 (Fri.), 2018Time: 15:50~17:25Session Chair: Prof. Wenchang Yeh (Shimane Univ., Japan)

G63-1 15:50~16:15

Selective Formation of Single Crystal Si/Ge Stripe on Glass Substrate for TFTs by Novel μ-Chevron Laser Beam Annealing Method

Wenchang Yeh and Seigo Moriyama (Shimane Univ., Japan)

Micro chevron laser beam annealing (μCLBA) was introduced, where single crystal Si stripe can be formed on Si film by selectively scanning μCLB over Si/Ge film. Details on this method and crystal quality of single crystal Si stripe will be shown.

G63-2 16:15~16:40

Meniscus Force Mediated Transfer of Single-Crystalline Silicon Thin Films on PET Substrate and Its Application to CMOS Circuit Fabrication

Seiichiro Higashi (Hiroshima Univ., Japan)

Single-crystalline silicon layer is transferred to polyethylene terephthalate (PET) substrate by meniscus force mediated layer transfer technique (MLT) at 80 ƃ. MLT technique is further extended to monolithic fabrication of CMOS circuits by pillar shaping implantation (PSI) technique, which enables the SiO2 pillars underneath the silicon layer in tapered side wall and makes the simultaneous layer transfer of both n- and p-channel with a high transfer yield (99.8%). TFTs showed high field effect mobilities of 529 (n) and 191 (p) cm2/Vs, and CMOS ring oscillator was successfully operated with 14.3 MHz.

G63-3 16:40~16:55

Photo-Sensors Using Poly-Si Thin Films Crystallized by BLDA for System on Panel Application

Tatsuya Okada, Tatsuyuki Higashizako, Charith Jayanada Koswaththage, Takashi Noguchi (Univ. of the Ryukyus, Japan), Taro Morimura, Osamu Nishikata, and Atsushi Ota (ULVAC, Inc., Japan)

Integrating thin film photo-sensors with TFTs as system on panel (SoP) is expected for shorten the process and reducing the cost during fabrication of multifunctional devices. In this work, we evaluated photo-sensitivity of 50 nm-thick poly-Si prepared by using PE-CVD and blue multi-laser diode annealing (BLDA). Poly-Si films crystallized by BLDA after the deposition using PE-CVD at 300 ɠ are expected not only TFTs but also photo-sensors for system on panel applications.


G (Room 314~315)

63 Si Transistors II

Date: Aug. 31 (Fri.), 2018Time: 15:50~17:25Session Chair: Prof. Wenchang Yeh (Shimane Univ., Japan)

G63-4 16:55~17:10

Analysis on Current Transport of Poly-Si Schottky Barrier TFTs by Blue-Laser-Diode Annealing (BLDA)

Keun Sam Lee, Ken Ji Shimai, Won Chul Choi (Nihon Sysnopsys G.K., Japan), Tatsuya Okada, and Takashi Noguchi (Univ. of the Ryukyus, Japan)

The Blue-Laser-diode Annealing (BLDA) method without high concentration n+ layer for LTPS TFT was developed to satisfy the high performance, the low temperature process, and low-cost as the back-plane device for display. The current transport mechanism for the SB-TFT (Schottky Barrier Thin Film Transistor), i.e. TFT with metal source and drain, and for conventional LTPS-TFT was analyzed using device simulator. Sufficient characteristics of the SB TFT was simulated for the SB-TFT and they are good agreement to the measured data. We analyzed the behavior of SB-TFT device with metal S/D device without ion implantation and showed that the poly Si TFT is expected to the device as for Back-Plane in Display with low fabrication cost.

G63-5 17:10~17:25

Theoretical Models on Laser Pulse Shape Dependence of Poly-Si Crystallization

Oleg N. Prudnikov (Novosibirsk State Univ., Russia), Min Jin Kang, Tae Sang Park, Sung Tae Shin, and Byoung-Ho Cheong (Korea Univ., Korea)

poly-Si crystallization mechanism is examined by conducting numerical simulations, combining the thermal diffusion equation with a rigorous coupled wave analysis method. The ripples at the boundary of poly-Si grains are modeled as a grating surface structure. Under laser beam irradiation, the melting front profiles are accurately analyzed by including surface diffraction, polarization of the laser, and laser energy density. For two different lasers, XeCl excimer laser (l = 308 nm) and Yb:YAG solid state laser (l = 343 nm), the energy density range at which poly-Si grains are gradually ordered was determined. Furthermore, the energy density window of the Yb:YAG laser is found to be four times larger than that of XeCl laser. On the other hand, the Yb:YAG laser may produce amorphous-Si phase after completing the crystallization process. It is suggested that this amorphous-Si phase could be avoided, if a double pulse laser is used.


H (Room 316~317)

64 Holographic Display Techniques

Date: Aug. 31 (Fri.), 2018Time: 15:50~17:25Session Chairs: Dr. Jisoo Hong (KETI, Korea)

Prof. Yoshio Hayasaki (Utsunomiya Univ., Japan)

H64-1 15:50~16:15

Recent Progress in Computer Holography: Color and Monochrome 3D Imaging by Large-Scale Computer-Generated Holograms

Kyoji Matsushima (Kansai Univ., Japan)

Several techniques recently developed is presented in computer holography, which is the technique to create holographic 3D images by using a computer. The created holograms, called computer-generated hologram (CGH), is composed of more than tens of billion pixels and can reconstruct 3D images of non-physical objects as well as physical objects in a deep 3D scene. The presented techniques include generation of very large-scale monochrome CGH with 0.1 trillion pixels, and full-color CGHs based on RGB color filters and transferred volume holograms. Actual monochrome and full-color large-scale CGHs will be demonstrated for verifying the techniques.

H64-2 16:15~16:40

Time-Multiplexing Techniques for Holographic Three- Dimensional Displays

Yasuhiro Takaki (Tokyo Univ., Japan)

The viewing-zone scanning holographic displays using the time-multiplexing technique have been developed to enlarge the screen size and the viewing zone. The MEMS-SLM generates hologram patterns at a high frame rate. The pixel pitch is magnified to enlarge the screen size and the reduced viewing zone is enlarged by the horizontal scanner. The 360-degree display system has been developed by rotating the reduced viewing zone circularly using a rotating flat screen. The color image generation is realized by generating the reduced viewing zones for R, G, and B colors sequentially. The multi-channel system is developed to further enlarge the screen size; the images produced by the multiple hologram projectors are tiled seamlessly on the planar scanner which provides a large screen size and a large scan angle.


H (Room 316~317)




H64-3 16:40~16:55

High-Speed Diffraction-Image Acquisition for Wide-Viewing Angle Hologram by Sequential Switching Light Sources

Sunggyun Ahn, Daerak Heo, Sungjin Lim, Geunseop Choi, Mugeon Kim, and Joonku Hahn (Kyungpook Nat'l Univ., Korea)

Recently, various methods for fabricating holograms have been proposed. Among them, imprinting method has some advantages for massive production of digital hologram since it consists of relatively simple fabrication processes. Also, it is possible to reconstruct object wave with its own colour from embossed imprinted hologram by adding structural coloration. We are concerned with high resolution holograms and we needs to measure the diffraction properties of this kind hologram. Generally, there are two approaches to measure wide-viewing angle from high resolution hologram. But, these two methods are not suitable for high speed and large quantity production. In this paper, we propose a high-speed diffraction-image acquisition system for wide-viewing angle hologram by sequential switching light sources. This system measures six different views of hologram originating from correspondent light emitting diodes (LEDs) respectively. Each LED generates collimated light with a pre-determined oblique angle and it flashes sequentially. Therefore, it is possible to measure diffraction images of wide-viewing angle hologram neither moving the hologram nor the camera.

H64-4 16:55~17:10

Occlusion Culling and Calculation for a Computer-Generated Fresnel Hologram Using a Projection-Based Method

Xu Zhang, Zi Wang, Guoqiang Lv, and Qibin Feng (Hefei Univ. of Tech., China)

We proposed a projection-based method to solve the occlusion problem and generate a hologram. The novel look-up table method (NLUT) is used to generate the Fresnel hologram. When calculating the complex amplitude distribution of a point on the hologram plane, the silhouette masks of all of the front layers will be projected to the hologram plane to make shadows. For each layer, the projected shadows of the front masks through the center points are precalculated and stored in the table. For other object points on this layer, the corresponding shadows on the hologram plane can be obtained by simply shifting precalculated shadows according to displacements of these points from the center point. The complex amplitude distribution of these points on the shadow regions will be deleted from the PFPs. Digital reconstruction proves that the proposed algorithm can reconstruct quality 3D scenes with accurate depth information, as well as the occlusion effect.


H (Room 316~317)




H64-5 17:10~17:25

Digital Content Generation for Holographic Stereogram Printer

Erkhembaatar Dashdavaa, Anar Khuderchuluun (Chungbuk Nat'l Univ., Korea), Sang-Keun Gil (Suwon Univ., Korea), and Nam Kim (Chungbuk Nat'l Univ., Korea)

A design and implementation of full-parallax holographic stereogram printer is presented. The holographic stereogram is synthesized using 2D perspective images of the 3D object that are rendered from multiple directions. The perspective images of the 3D scene are firstly captured by a virtual camera and transformed to two-dimensional holographic elements called hogels. The hogels are exposed using the perspective images to form the whole holographic stereogram. After all the hogels are exposed successively, a holographic stereogram can be achieved. Numerical simulation and optical reconstructions are implemented.


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-1

Wide Emission-Tunability of Novel Ag–Ga–S and Its Quaternary Derivative Quantum Dots

Kyung-Hye Kim, Jong-Hoon Kim, Chang-Yeol Han, and Heesun Yang (Hongik Univ., Korea)

P1-2

Highly Efficient, Green-to-Near Infrared Emission-Tunable Cu–In–S Quantum Dots

Suk-Young Yoon, Jong-Hoon Kim, Hwi-Jae Kim, and Heesun Yang (Hongik Univ., Korea)

P1-3

Silica Embedding of Multishelled InP/ZnSeS/ZnS Quantum Dots towards High Photoluminescence Retention and Photostability

Seung-Won Lim, Eun-Pyo Jang, Jung-Ho Jo, Han-Byul Lim, and Heesun Yang (Hongik Univ., Korea)

P1-4

Stability Improvement of Quantum Dot/Siloxane Film by Silica- Modification

Yun Hyeok Kim, Su Kyong Lee, Yong Ho Kim, and Byeong-Soo Bae (KAIST, Korea)

P1-5

Highly Hazy Glass-Fabric Reinforced Quantum Dot Hybrimer (QDGFRHybrimer) Phosphor Film for Improved Luminescent Display/ LightingHyunhwan Lee, Young-Woo Lim, Junho Jang, and Byeong-Soo Bae (KAIST, Korea)

P1-6

A Study on the Effect of ZnO Nanoparticles Size on the Charge Balance of QLEDsSanghyun Lee, Suyoung Park, Junekyun Park, Jaewon Jeong, Jaehyun Kim, Juhyung Kim, Seok-won Jeong, and Yonghan Roh (Sungkyunkwan Univ., Korea)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-7

Shape Control of InP Colloidal NanocrystalsHyekyoung Choi, Youngsik Kim, Xing Jin, and Sohee Jeong (KIMM, Korea)

P1-8

Inkjet Printing Strategy with Quantum Dots and Insulator Blending for Highly Efficient Quantum Dot Light-Emitting DiodesDonghyun Ko, Heebum Roh (Seoul Nat'l Univ., Korea), Wan Ki Bae (Sungkyunkwan Univ., Korea), and Changhee Lee (Seoul Nat'l Univ., Korea)

P1-9

High Efficiency, Solution Processed QLED via 1,12-Diaminododecane (DAD) Ligand ExchangeSeunghyun Rhee (Seoul Nat'l Univ., Korea), Roman Kusterer, Philipp Haida (Hamburg Univ., Germany), and Changhee Lee (Seoul Nat'l Univ., Korea)

P1-10

Improving Charge Balance Using LiF Thin Layer: Toward Highly Efficient and Stable Inverted Quantum-Dot Light-Emitting DiodesJongseok Han (Seoul Nat'l Univ., Korea), Wan Ki Bae (Sungkyunkwan Univ., Korea), and Changhee Lee (Seoul Nat'l Univ., Korea)

P1-11

Effect of Pressure and Solvent on Formation of Quantum Dots Film for Soft Contact PrintingKyunghwan Kim, Heeyoung Jung (Seoul Nat'l Univ., Korea), Wan Ki Bae (Sungkyunkwan Univ., Korea), and Changhee Lee (Seoul Nat'l Univ., Korea)

P1-12

Hybrid Light Emitting Diodes with Stacked QLEDs-OLEDs StructureSoeun Ju, Sungkeun Oh, and Jiwan Kim (Kyonggi Univ., Korea)

P1-13

CsPbBr3/PbS Core/Shell Perovskite Quantum Dot for Enhanced Stability and Improvement of Luminous Efficiency through Control of LigandHo-Yong Kim and Yong-Seog Kim (Hongik Univ., Korea)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-14

Characteristic Analysis on ZnO / PEDOT: PSS Charge Generation Junctions for Improvement of Hole Injection Ability in QLEDs

Jaehyun Kim, Sanghyun Kim, Jaewon Jeong, Junekyun Park, and Yonghan Roh (Sungkyunkwan Univ., Korea)

P1-15

No-Show

P1-16

No-Show

P1-17

No-Show

P1-18

An Augmented Reality Display System Based on FPGA PlatformRan Duan, XiTong Ma, Chuang Wei, and Xiao Zhang (BOE Tech. Group Co., Ltd., China)

P1-19

True 3D Displays Based on Liquid Crystals for AR ApplicationsYan Li, Shuxin Liu, Pengcheng Zhou, and Quanming Chen (Shanghai Jiao Tong Univ., China)

P1-20

Multi Focal Head-Mounted Display Using Reflective Optical SystemNari Kim, Hoyoung Jung, Sehoon Kim, and Wonhee Choe (Samsung Electronics, Co., Ltd., Korea)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-21

Low-Resolution Backlight Modulated Near-Eye Tomographic DisplayDongheon Yoo, Seungjae Lee, Youngjin Jo, Jaebum Cho, and Byoungho Lee (Seoul Nat'l Univ., Korea)

P1-22

Occlusion-Capable Head-Mounted Display with Digital Micro-Mirror DeviceKwangsoo Kim, Mugeon Kim, Daerak Heo, and Joonku Hahn (Kyungpook Nat'l Univ., Korea)

P1-23

Optical System of Slim Head Mounted Display for Virtual RealitySung-Min Jung, Keong-Jin Lee, Sung-Woo Kim, Hoon Kang, Bu-Yeol Lee, Soo-Young Yoon, and In-Byeong Kang (LG Display Co., Ltd., Korea)

P1-24

‘Double-Layered’ Serpentine Interconnects with a Liquid Metal Conducting Layer

Doo Ri Yim (UST, Korea), Chi-Sun Hwang, and Chan Woo Park (ETRI, Korea)

P1-25

A Sensitive and Flexible Thin Film Humidity Sensor by Using Enhanced Hydrophilic PTFE for Real-Time Monitoring SystemSeok Hwan Jeong, Heekyeong Park, Uihyun Jung (Sungkyunkwan Univ., Korea), Joonhyung Lee (Samsung Advanced Inst. of Tech., Korea), and Sunkook Kim (Sungkyunkwan Univ., Korea)

P1-26

Highly Sensitive, Stable and Stretchable Resistive Pressure Sensor Based on Silver Nanowires and Conductive PolymerJinyoung Lee, Gieun Kim, Dongkyun Shin, and Jongwoon Park (KOREATECH, Korea)

P1-27

A Long-Term Monitoring System for Medicinal Products Accompanying by the Silver Nanowires Based Temperature SensorMuhammad Naqi, Uihyun Jung, Srinivas Gandla, Hyeokju Chae, and Sunkook Kim (Sungkyunkwan Univ., Korea)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-28

Study of Variously Designed Piezoelectric Electrode Manufactured by a Screen Printing Technique

Hyunho Park (KETI, Korea), Ji Sun Yoon (KICET, Korea), and Sun Hong Yoon (KETI, Korea)

P1-29

Portable Sleep Monitoring Sensor to Prevent SIDS

Inyeol Yun, Jinpyeo Jeung, and Yoonyoung Chung (POSTECH, Korea)

P1-30

Skin-Inspired Optoelectronic Materials and Devices: Polyethylene Glycol-Based Diblock CopolymerChih-Li Chang (Nat'l Sun Yat-sen Univ., Taiwan) and Ho-Hsiu Chou (Nat'l Tsing Hua Univ., Taiwan)

P1-31

Large area multi-layer MoS2 by two step synthesis

Sooho Choo, Jeonghun Kim, Healin Im, Trung Nguyen, Liu Na, and Sunkook Kim (Sungkyunkwan Univ., Korea)

P1-32

Fabrication of Film-Type Frequency Selective Surface Structure Based on Printing Technology

Sun Hong Yoon and Hyunho Park (KETI, Korea)

P1-33

Stretchable Nanowire Photodetector by All-Printing and Welding Method for Wearable ApplicationsKyungji Kim, Byeongmoon Lee, Seunghwan Lee, and Yongtaek Hong (Seoul Nat'l Univ., Korea)

P1-34

Self-Healable and Radiation Shielding Composite HydrogelJinwoo Park (Seoul Nat'l Univ., Korea), Sooseok Choi (Jeju Nat'l Univ., Korea), and Jeoung-Yun Sun (Seoul Nat'l Univ., Korea)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-35

Soft and Stretchable Gels Consisting of Non-Polar Solvent with Enhanced Stability of Luminescent Perovskite Nanocrystals

Jae-Man Park and Jeong-Yun Sun (Seoul Nat'l Univ., Korea)

P1-36

Mechanical Stability of Stretchable AMOLED Display

Sangwoo Kim, Jong-Ho Hong, Jae Min Shin, Jun Hyeong Park, Jewon Yoo, Hyejin Joo, Gyujeong Lee, Keunkyu Song, Sung-Chan Jo, and Jinoh Kwag (Samsung Display Co., Ltd., Korea)

P1-37

Surface Aligned Main-Chain Liquid Crystalline Elastomers: Tailored Properties by the Choice of Amine Chain Extenders

Hyeong-ho Yoon (Pusan Nat'l Univ., Korea), Dae-yoon Kim, Kwang-un Jeong (Chonbuk Nat'l Univ., Korea), and Suk-kyun Ahn (Pusan Nat'l Univ., Korea)

P1-38

Experimental Study on 3D Metal Interconnection for HySiF(Hybrid System in Flexible) Devices and Stretchable Displays Utilizing a Direct-Imaging MethodYongjin Kim, Joon Yub Song, Jae Hak Lee, and Seung Man Kim (KIMM, Korea)

P1-39

Graphene QDs-Doped WO3 in Electrochromic DevicesAmirhossein Hasani, Quyet Van Le, Thang Phan Nguyen (Chung-Ang Univ., Korea), Kyoung Soon Choi (KBSI, Korea), Ho Won Jang (Seoul Nat'l Univ., Korea), and Soo Young Kim (Chung-Ang Univ., Korea)

P1-40

Development of High Mobility Indium Oxide-Based Transparent Oxide Semiconductor

Mitsuru Ueno, Fumito Ootake, Motoshi Kobayashi, and Junya Kiyota (ULVAC, Inc., Japan)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-41

Synthesis of 2-Dimensional Single Phase SnS2 by Atomic Layer

Deposition

Jung Joon Pyeon, In-Hwan Baek (KIST, Korea), Taek-Mo Chung (KRICT, Korea), Jeong Hwan Han (SEOULTECH, Korea), Chong-Yun Kang, and Seong Keun Kim (KIST, Korea)

P1-42

Fluorescent Emitters Based on Indeno-Polycyclic Aromatic Derivatives

for Organic Light-Emitting Diodes

Namhee Hwnag, Jisu Kang (Sungkyunkwan Univ., Korea), Song Eun Lee, Young Kwan Kim (Hongik Univ., Korea), and Seung Soo Yoon (Sungkyunkwan Univ., Korea)

P1-43

Functional Nanostructures for Improving the Out-Coupling Efficiency of Organic and Perovskite Light-Emitting Diodes

Jeong Bin Shin, Ju Young Woo (KAIST, Korea), Sohee Jeong (KIMM, Korea), and Kyung Cheol Choi(KAIST, Korea)

P1-44

Highly Stable Ambipolar Perovskite Phototransistors Fabricated by Chemical Vapor Deposition

Hyoung-Do Kim, Hae-Won Lee, Soon-Gil Yoon, and Hyun-Suk Kim (Chungnam Nat'l Univ., Korea)

P1-45

Ambipolar Organic Field Effect Transistors Based on Tips-Benzodithiophene Copolymers: Acceptor Unit Effect on Polymer Performance

Henry Opoku and Yong-Young Noh (Dongguk Univ., Korea)

P1-46

1T-Phase Transition Metal Dichalcogenide Nanosheet Based Antimicrobial Applications for Display Device

Tae In Kim, Ick-Joon Park, Jayoung Kim, and Sung-Yool Choi (KAIST, Korea)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-47

Fabrication of Anti-Reflection Thin Films Using a Coatable Polarizer and Retarder with a Photo-Alignment Materials

Young Hun Kim, Chang Sub Kim, Han Sol Back, Jeong Ju Baek, Ki Cheol Chang, Gwang Sik Song, Kyung Ho Choi, and Gyo Jic Shin (KITECH, Korea)

P1-48

Side-Chain Polyimides as Binder Polymer for Photolithographic Patterning of Black Pixel Define Layer for Organic Light Emitting Diode

Genggongwo Shi (CCTech, Korea), Sung Hoon Park (UNIST, Korea), Jeseob Kim (CCTech, Korea), Jin Woo Park (Samsung Display Co., Ltd., Korea), and Lee Soon Park (UNIST, Korea)

P1-49

Analysis of Charge Transfer Complex Formation at the Interface between Organic and Inorganic Semiconductors

Seung-Hoon Lee, Jae-Young Park, Hyun-Kyung Choi, and Jae-Hyun Lee (Hanbat Nat'l Univ., Korea)

P1-50

No-Show

P1-51

A Study of the Defects in the Polysilicon Device from Excimer Laser Annealing

Mi-Hyang Sheen, Doo Hyoung Lee, Kyung Lae Rho, and Nari Ahn (Samsung Display Co., Ltd., Korea)

P1-52

Reproducible and Air Stable Gas Sensor Based on Organic Field Effect Transistor Using Indacenodithiophene-Co-Benzothiadiazole Polymer with Additives

Eun-Sol Shin and Yong-Young Noh (Dongguk Univ., Korea)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-53

Ferroelectric Memory Application of Dual Gate Oxide Field-Effect Transistors

Amos Amoako Boampong, Jae-Hyun Lee, Yoon Seuk Choi, and Min-Hoi Kim (Hanbat Nat'l Univ., Korea)

P1-54

Interface-Engineered Low-Voltage Organic Thin Film Transistors with Hydrogel/Polyurethane Bilayer Gate Dielectrics

Grace Dansoa Tabi, Benjamin Nketia-Yawson (Dongguk Univ., Korea), Joo Sung Kim, Do Hwan Kim (Hanyang Univ., Korea), and Yong-Young Noh (Dongguk Univ., Korea)

P1-55

A LTPS Pixel Circuit for AMOLED Displays

Jiuzhan Zhang, Zhanjie Ma, Zhenzhen Han, Hui Zhu, Xiujian Zhu, and Xiuqi Huang (Yungu (Gu' an) Tech., Co., Ltd., China)

P1-56

Fluorinated Epoxy Hybrid Material for Transparent Low-K Passivation

Layer on Oxide Thin Film Transistors

In Jun Lee, Yong Ho Kim, Jung Cheol Shin, Sang-Hee Ko Park, and Byeong-Soo Bae (KAIST, Korea)

P1-57

No-Show

P1-58

Improvement of HDCS Instability in Self-Aligned Coplanar InGaZnO

Thin Film Transistor

Hyun Tae Jung, Seung Min Lee, Hyun Min Cho, Woo Cheol Jeong, Jae Yong Park, and Jong Woo Kim (LG Display Co., Ltd., Korea)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-59

High Performance Thin-Film Transistors Using Amorphous (ZnxBa1-x) SnO3 Semiconductors: Experimental and First-Principles StudySo Hyeon Lee (Chungnam Nat'l Univ., Korea), Ho-Hyun Nahm (KAIST, Korea), and Hyun-Suk Kim (Chungnam Nat'l Univ., Korea)

P1-60

Undercut Investigation of Aluminum Gate Line for the Application of Self-Aligned Imprint Lithography TFT FabricationHyung Tae Kim, Sung Jin Kim, Hee Nam Chae, and Sung Min Cho (Sungkyunkwan Univ., Korea)

P1-61

High Mobility P-Type Thin-Film Transistors Based on Copper Oxynitride SemiconductorSeung Deok Yoon and Hyun-Suk Kim (Chungnam Nat'l Univ., Korea)

P1-62

Low Temperature Fabrication of In-Ga-Zn-O Thin-Film Transistors Using Microwave AnnealingSeong Cheol Jang and Hyun-Suk Kim (Chungnam Nat'l Univ., Korea)

P1-63

A High Sensitive NO2 Gas Sensors Based on Multilayered Molybdenum DisulfideSe Hwan Kim, Hea Lin Im, Na Liu, and Sun Kook Kim (Sungkyunkwan Univ., Korea)

P1-64

Effect of Etch-Stop Layer Deposition Temperature on the Performance of Indium-Gallium-Zinc-Oxide Thin Film TransistorRusheng Liu, Genmao Huang, Lin Xu, Cuicui Sheng, Bo Yuan, Xiuqi Huang, and Xiaoyu Gao (Yungu (Gu’an) Tech., Co., Ltd., China)

P1-65

Analysis and Modeling of Capacitances in Organic Field-Effect TransistorsSung Yeop Jung (POSTECH, Korea), Yong Jeong Lee, Gilles Horowitz, Yvan Bonnassieux (Ecole Polytechnique, France), and Sung June Jung (POSTECH, Korea)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-66

Binary Solvent Effects on Sorted Semiconducting Carbon Nanotubes Using Naphthalene Diimide-Based Conjugated PolymersDong Seob Ji, Ji-Young Go, Eun Sol Shin, and Yong-Young Noh (Dongguk Univ., Korea)

P1-67

High Mobility Poly-Si TFT Formed on Flexible Polyimide Using Low Temperature ProcessFuta Gakiya, Daisuke Tokieda, Yuya Ishiki, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus, Japan), and Tetsuo Okuyama (Toyobo Co., Ltd., Japan)

P1-68

No-Show

P1-69

Effect of Molecular Structure on Film Morphology and Performance of Organic Field-Effect Transistors

Melaku Dereje Mamo (Dongguk Univ., Korea), Tomotsugu Takaya, Makoto Karakawa (Kanazawa Univ., Japan), and Yong-Young Noh (Dongguk Univ., Korea)

P1-70

Organic/Inorganic Hybrid Shortwave Infrared Phototransistors with Improved Detectivity

Hyonwoong Kim, Zhenghui Wu, and Tse Nga Ng (Univ. of California, USA)

P1-71

Reliability Mechanism of Al2O3-Passivated Amorphous InGaZnO Thin-Film Transistors Using Dimethylaluminum Hydride at Different ALD Temperatures

Dianne Corsino, Juan Paolo Bermundo, Mami N. Fujii (NAIST, Japan), Kiyoshi Takahashi (Nippon Aluminum Alkyls, Ltd, Japan), Yasuaki Ishikawa, and Yukiharu Uraoka (NAIST, Japan)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-72

No-Show

P1-73

Waterproof Flexible GaN LED on a Liquid Crystal Polymer Substrate Applicable to Implantable Biomedical Field

Jae Hee Lee and Keon Jae Lee (KAIST, Korea)

P1-74

No-Show

P1-75

Highly Efficient Organic Light Emitting Diodes Based on the Controlled

Light-Scattering Layers

Hyeck Go (KITECH, Korea), Eun-Mi Han (Chonnam Nat'l Univ., Korea), and Changhun Yun (KITECH, Korea)

P1-76

Polarized Light Emission Based on Smectic Phase Reactive Mesogen

Sang-Hun Lee, Rui He, Keumjin Ko, Jea-Wook Kang, and Myong Hoon Lee (Chonbuk Nat'l Univ., Korea)

P1-77

Synthesis and Characterization of Vovel Polypyrrole Hybrid

Nanotubules Incorporated with Polyaniline Spots

Ji-Hong Bae, Kyung Seok Kang, Chanhyuk Jee, Hyo Jin Jung, and Pilho Huh (Pusan Nat'l Univ., Korea)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-78

A Study on the Phosphor Synthetic Process Mimicking the Pumice- Forming Process

Tae Gil Lim, Yong Nam Ahn, Hyun Woo Park, and Jae Soo Yoo (Chung-Ang Univ., Korea)

P1-79

Highly Efficient White Organic Light-Emitting Devices by Solution Processing of Emission Layer

Jong-Beom Kim, Tae-Yong Kim, Mi-Young Ha, Da-Young Park, and Dae-Gyu Moon (Soonchunhyang Univ., Korea)

P1-80

Effect of Microlens Shapes and Dimensions on the Outcoupling Efficiency of Organic Light Emitting Diodes Studied by FDTD Simulation

Ji-Soo Park, Jong-Wan Lee, Jae-Hyeon Ko (Hallym Univ., Korea), Young Wook Ko, Yong duk Kim, and Yong Hwan Yoo (CPRI, Korea)

P1-81

Effects of the Active Volume on the Efficiency Droop of InGaN/GaN Blue Light-Emitting Diodes

Yu-Lim Min, Chan-Hyoung Oh, Dong-Soo Shin, and Jong-In Shim (Hanyang Univ., Korea)

P1-82

Characterization of Time-Dependent Atmospheric Denaturalization of Small Organic Molecule Thin Films in OLED

Seok Kyu Han, Hyunsang Seo, Young Gil Park, Nari Ahn, and Ki Hyun Kim (Samsung Display Co., Ltd., Korea)

P1-83

Inorganic Perovskite Light-Emittng Diodes with Enhanced Stability and Efficiency

Yuequn Shang (ShanghaiTech Univ., China), Jun Pan, Osman Bakr (KAUST, Saudi Arabia), and Zhijun Ning (ShanghaiTech Univ., China)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-84

Improvement of OLED Impedance Analysis Based on Maxwell-Wagner Model and Its Application on Device Analysis

Hyosup Shin, Seokgyu Yoon, and Hyein Jeong (Samsung Display Co., Ltd., Korea)

P1-85

Performance Improvement by Copper Invar Copper Substrate for

N-Side Up AlGaInP-Based LED

Cheng-Po Li (Nat'l Chiao Tung Univ., Taiwan), Dong-Sing Wuu (Nat'l Chung Hsing Univ., Taiwan), and Ray-Hua Horng (Nat'l Chiao Tung Univ., Taiwan)

P1-86

Enhanced Light Extraction Red LEDs by Surface Texture Process

You-Cheng Lin, Fu-Gow Tarntair (Nat'l Chiao Tung Univ., Taiwan), Kuei-Yuan Cheng (ITRI, Taiwan), and Ray-Hua Horng (Nat'l Chiao Tung Univ., Taiwan)

P1-87

Fabrication of Multifocal Lenses Using Holographic Technology

Jae-min Lee, Seo-Yeon Park, Seok-Hee Jeon, and Nam-Kim (Chungbuk Nat'l Univ., Korea)

P1-88

Chiroptical Organic Semiconductor Thin Films for Circularly Polarized

Light Detector

Na Yeon Kim (KIST, Korea), Eun Ji Lee (GIST, Korea), Byeong Kwon Ju (Korea Univ., Korea), and Jung Ah Lim (KIST, Korea)

P1-89

Improved Charge Balance by Double Oxide Buffer Layers in Organic

Light-Emitting Diodes

Chang Min Lee, Dong Hyun Kim, P. Justin Jesuraj, Hassan Hafeez, and Seung Yoon Ryu (Korea Univ., Korea)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-90

Effect of Interlayer Thickness in Quantum Well Structure for Highly Efficient Blue Phosphorescent Organic Light Emitting Diodes

Tae Kyoung Kim, Jong Chan Lee, P. Justin Jesuraj, Hassan Hafeez, and Seung Yoon Ryu (Korea Univ., Korea)

P1-91

No-Show

P1-92

Enhanced Optical Properties of GaN-Based Green Micro Light- Emitting-Diode with Tin-Oxide Nanostructure for Next Generation Full-Color Microdisplay

Donggyun Yoo, Yeonsik Kim (Korea Univ., Korea), Hyun-Chan Moon (EyeDis, Co., Ltd, Korea), and Byeong Kwon Ju (Korea Univ., Korea)

P1-93

Origin of Macroscopic Adhesion Force in Organic Light-Emitting Diodes Analyzed at Different Length Scales

Minyoung Yoon, Sungho Kim, Seongjae Park (Sungkyunkwan Univ., Korea), Wanheui Lee (Samsung Display Co., Ltd., Korea), Owoong Kwon (Sungkyunkwan Univ., Korea), Shang-U Kim, Youngtae Choi, Jongwoo Park (Samsung Display Co., Ltd., Korea), and Yunseok Kim (Sungkyunkwan Univ., Korea)

P1-94

Flexible Top Emission Organic Light-Emitting Diodes Incorporating Nano Lens Array Simply Fabricated by Organic Vapor Phase Deposition

Jungyun Kwon, Doo-Hee Cho, O Eun Kwon, Jonghee Lee, Woo Jin Sung, Jun-Han Han, Jaehyun Moon, Byounggon Yu, Seongdeok Ahn, Nam Sung Cho, Jeong-Ik Lee, and Young-Sam Park (ETRI, Korea)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-95

PI-SCALE: Setting Up a Flexible OLED Pilot LineYun Fu Chan, Sean Bolton, John McLean, Philip Hollis (Centre for Process Innovation Ltd., UK), Pavel Kudlacek (Holst Centre, Netherlands), Claudia Keibler-Willner (Fraunhofer FEP, Germany), and Markus Tuomikoski (VTT, Finland)

P1-96

Pre-Drying Treatments of PEDOT:PSS Films for the Enhancement of Intra-Pixel Thickness UniformityDongkyun Shin (KOREATECH, Korea), Yu Seok Seo, Seong Hoon Jang (Youlchon Chemical, Co., Ltd., Korea), and Jongwoon Park (KOREATECH, Korea)

P1-97

Suppression of Aggregation in Crosslinked Hole Transport Films by a Mixture of PolymerJinyoung Lee (KOREATECH, Korea), Yu Seok Seo, Seong Hoon Jang (Youlchon Chemical, Co., Ltd., Korea), and Jongwoon Park (KOREATECH, Korea)

P1-98

Degradation Mechanism of Stable Blue Fluorescent OLEDs with Different Hole Transport MaterialsSong Eun Lee (Hongik Univ., Korea), Geum Jae Yun (Hoseo Univ., Korea), Namhee Hwang (Sungkyunkwan Univ., Korea), Ki Ju Kim, Su A Ahn (Hongik Univ., Korea), Seung Soo Yoon (Sungkyunkwan Univ., Korea), Woo Young Kim (Hoseo Univ., Korea), and Young Kwan Kim (Hongik Univ., Korea)

P1-99

Effect of the Dipole Emitter Position on the Internal Electric Field Distribution of the Radiation Mode in a Top-Emitting Organic Light-Emitting DiodeJiyong Kim (Kyung Hee Univ., Korea), Kyoung-Youm Kim (Sejong Univ., Korea), and Jungho Kim (Kyung Hee Univ., Korea)

P1-100

Al2O3&TiO2 Hybridization Nano-Lamination via Plasma Enhanced Atomic Layer Deposition for OLED Thin Film EncapsulationXueyuan Li, Ying Huang, Ping Zhu, Shengfang Liu, Xiuqi Huang, and Xiaoyu Gao (Yungu(Gu'an) Tech. Co., Ltd., China)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-101

Solutions Processed Single-Layer Phosphorescent White Organic Light-Emitting Diodes with Bipolar Host MaterialDong Uk Kim, Kyu Sung Kim, and Jae-Woong Yu (Kyung Hee Univ., Korea)

P1-102

Investigation of OLED Characteristics Evolution under Sequential Photolithography Patterning ProcessesTung-Huei Ke, Paweł E. Malinowski (IMEC, Belgium), Atsushi Nakamura (Fujifilm Electronic Materials (Europe), Belgium), Dieter Vander Velpen, Erwin Vandenplas, and Paul Heremans (IMEC, Belgium)

P1-103

No-Show

P1-104

No-Show

P1-105

No-Show

P1-106

Anti-Glare Glass-Fabric Reinforced Hybrimer (GFRHybrimer) Film with Flexural Hard Surfaces

Hyunhwan Lee, Seung-Mo Kang, Young-Woo Lim, and Byeong-Soo Bae (KAIST, Korea)

P1-107

No-Show


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-108

No-Show

P1-109

No-Show

P1-110

Holographic Display System with Wide-Viewing Zone and Enabling Users to Interact with Holographic 3D Contents

MinSung Yoon, Youngjun Kim, and Il Kwon Jeong (ETRI, Korea)

P1-111

A Transparent a-ITZO/Al2O3 Coupled MOIM Photo Sensing Diode

Ha-gun Oh, Myeong-ho Kim, and Duck-kyun Choi (Hanyang Univ., Korea)

P1-112

A New Type Transparent Oxide Diode with DUV Irradiation

Jong-un Kim, Myeong-ho Kim (Hanyang Univ., Korea), Jun-hyung Lim (Samsung Display Co., Ltd., Korea), and Duck-kyun Choi (Hanyang Univ., Korea)

P1-113

Fabrication of Aligned Carbon Nanotubes-Based Biosensor for Detection of Alzheimer's Disease

Minji Kim and Steve Park (KAIST, Korea)

P1-114

A New Evaluation Method of the Touch Latency

Byeollim Kim (LG Display Co., Ltd., Korea)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-115

Deformable, Transparent and Visco-Poroelastic Ion Pumps for Triboelectric Nanogenerators and Self-Powered Tactile Sensors

Joo Sung Kim (Hanyang Univ., Korea), Hee Jae Hwang (Kyung Hee Univ., Korea), Eunsong Jee (Hanyang Univ., Korea), Dukhyun Choi (Kyung Hee Univ., Korea), and Do Hwan Kim (Hanyang Univ., Korea)

P1-116

An Electrochromically Active Iontronic Touch Skin Using Elastomeric Ion Pumps

Jehyoung Koo, Kyungah Nam (Hanyang Univ., Korea), Moon Sung Kang (Soongsil Univ., Korea), and Do Hwan Kim (Hanyang Univ., Korea)

P1-117

Orthogonal Interpenetrating Polymer Semiconductor Networks for Ultrasensitive Organic Transistor Chemosensor

Jaehee Kim, Haejung Hwang, Han Wool Park (Hanyang Univ., Korea), Moon Sung Kang (Soongsil Univ., Korea), and Do Hwan Kim (Hanyang Univ., Korea)

P1-118

Cross-Aligned Silver Nanowire Electrodes by Bar-Coating Assembly for Flexible and Transparent Mechanochromic Touch Screens

Seungse Cho, Saewon Kang, Ashish Pandya, Ravi Shanker, Ziyauddin Kkan, Youngsu Lee, Stephene L. Craig, and Hyunhyub Ko (UNIST, Korea)

P1-119

Transparent and Robust Silver Nanowire-Polymer Composite Nanomembrane for the Fabrication of Wearable ElectronicsSaewon Kang, Seungse Cho, Ravi shanker, Hochan Lee, Jonghwa Park, Dooseung Um, Youngoh Lee, and Hyunhyub Ko (UNIST, Korea)

P1-120

Three-Dimensional Microporous Pressure Sensor Fabricated Using Droplet Based Microfluidic Assisted Emulsion Self-AssemblyJin-Oh Kim, Se Young Kwon, Jun Chang Yang, Jinwon Oh, and Steve Park (KAIST, Korea)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-121

Electroluminescent Pressure Sensing Displays with Micro-Pyramidal Patterned Ionic GelSeung Won Lee, Eui Hyuk Kim, Soyeon Baek, Seokyeong Lee, and Cheolmin Park (Yonsei Univ., Korea)

P1-122

Large Area Sensing Fingerprint Sensors with Built-in Multi-Touch InteractionJae Kyoung Kim, Kiseo Kim, Kyoungtea Park, Byunghan Yoo, Jong-In Baek, Won-Sang Park, Sung-Chan Jo, Hye Yong Chu, Jinoh Kwag, and Sungchul Kim (Samsung Display Co., Ltd., Korea)

P1-123

Doped Fluorinated Elastomeric Dielectric for Pressure SensorsGuan-Ting Chen, Shih-Han Wei, Chun-Hao Su, Min-Yu Wen, Ying-Chih Liao, and Wen-Ya Lee (Nat'l Taipei Univ. of Tech., Taiwan)

P1-124

Pressure Insensitive Strain Sensor Based on Porous MWCNT-Polymer Composite with Solution-Based Process

Jinwon Oh, Jun Chang Yang, Jin-Oh Kim, and Steve Park (KAIST, Korea)

P1-125

Pressure Sensor with High-Sensitivity and Low Hysteresis Based Porous Pyramid Structure

Jun Chang Yang, Jin-Oh Kim, and Steve Park (KAIST, Korea)

P1-126

Withdrawal

P1-127

Inorganic Polymer Micro-Pillar Based Solution Shearing Process with Controlled Morphology and Crystal Size

Jeong-Chan Lee, Jin-Oh Kim, Min-Ji Kim, and Steve Park (KAIST, Korea)


2B Hall (1F)

Poster Session I

Date: Aug. 29 (Wed.), 2018Time: 13:20~14:50

P1-128

Fabrication of Metal Mesh Type Transparent Conducting Electrode Films for Touch Screen PanelDuck Min Seo, Genggongwo Shi (UNIST, Korea), Su Yong Nam (Pukyong Nat'l Univ., Korea), Deok Yeong Lee (ELK Corp., Korea), and Lee Soon Park (UNIST, Korea)

P1-129

High-Speed Electroactive Polymer Actuator for Artificial MuscleYongchan Kim (Soongsil Univ., Korea), So Young Kim (Hanyang Univ., Korea), Dayoon Lee (Soongsil Univ., Korea), Eunsong Ji, Do Hwan Kim (Hanyang Univ., Korea), and Hojin Lee (Soongsil Univ., Korea)

P1-130

Dielectric Field Assisted One Step Sorting and Large Area Thin Film Fabrication with Single-Walled Carbon NanotubeHyeonseok Lee and Steve Park (KAIST, Korea)

P1-131

Ultrasensitive, Iontronic Touch Sensor Based on Cellular Structured Ionic Polymer CompositesVipin Amoli, Eunsong Jee, Joo Sung Kim, Kyungah Nam, So Young Kim, Haejung Hwang, and Do Hwan Kim (Hanyang Univ., Korea)

P1-132

Flat Panel Fingerprint/Image-Scan Sensor Using a-Si TFT Photo- Transistor and Four-Mask Process Architecture TechnologyAn-Thung Cho, Kai-jun Liu, Zhen Liu, Qiong-hua Mo, Feng-yun Yang, Wan-fei Yong, James Hsu, Wade Chen, and York Lu (Chongqing HKC Optoelectronics Tech. Co., Ltd., China)

P1-133

Large Sized Touch System Using Advanced In-Cell Touch for Digital KioskJaehun Jun, Hongju Lee, Yongwoo Choi, Kyungjin Jang, and Jongsang Baek (LG Display Co., Ltd., Korea)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-1

Super Ultra-High Resolution Liquid-Crystal-Display Using Perovskite Quantum-Dot Functional Color-Filters

Yun-Hyuk Ko, Mohammed Jalalah, Seung-Jae Lee, Ji-Eun Lee, Seo-Yun Kim, and Jea-Gun Park (Hanyang Univ., Korea)

P2-2

Metal Oxide Nanoparticles in an Electron Transport Layer for Efficient Charge Balance in Inverted Quantum Dot Light-Emitting Diodes

Hyejin Kim, Woosuk Lee, and Heeyeop Chae (Sungkyunkwan Univ., Korea)

P2-3

Stability Improvement of Quantum Dot Color Conversion Films by the Interconnection between Designed Quantum Dot Ligands and Polymer Matrices

Eunhee Nam, Changmin Lee, and Heeyeop Chae (Sungkyunkwan Univ., Korea)

P2-4

Controllable Smectic Defect Patterns Using In-plane Electric Field and Their Use as Templates for Quantum Dot Cluster Arrays

Ahram Suh (KAIST, Korea), Hyungju Ahn (POSTECH, Korea), Tae Joo Shin (UNIST, Korea), and Dong Ki Yoon (KAIST, Korea)

P2-5

Inverted Quantum Dots Based Light-Emitting Devices Using Size Tunable ZnO Nanoparticles

Ju-Seong Kim, Hyun-Min Jeong, Sae-Wan Kim, Binrui Xu, Jin-Beom Kwon, and Shin-Won Kang (Kyungpook Nat'l Univ., Korea)

P2-6

Surface Morphology of Quantum-Dot Layer Affected by Baking Condition of Hole Transport Layer

Young Joon Han, Kyung Tae Kang (KITECH, Korea), Byung Kwon Ju (Korea Univ., Korea), and Kwan Hyun Cho (KITECH, Korea)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-7

Effect of the Concentration of Solution-Processed Zinc Oxide Nanoparticles for Quantum Dot Light Emitting DiodeSuk-Ho Song, Sung-Jae Park, Tae-Jun Bae, Won-Hyeok Park, Sang-Soo Kim, and Jang-Kun Song (Sungkyunkwan Univ., Korea)

P2-8

Efficiency Improvement with DMSO Treatment of PEDOT:PSS for Quantum Dot Light Emitting Diode

Tae-Jun Bae, Suk-Ho Song, Sung-Jae Park, Sang-Soo Kim, and Jang-Kun Song (Sungkyunkwan Univ., Korea)

P2-9

All Solution Processed Oxide/Metal/Oxide Multilayers on QD-Based EL DevicesHyungin Lee and Jiwan Kim (Kyonggi Univ., Korea)

P2-10

Quantum Dot Based Light Emitting Diodes with Graphene Schottky Barrier ControlJaewon Jeong, Sanghyun Lee, Jaehyun Kim, Junkyun Park, Juhyung Kim, and Yonghan Roh (Sungkyunkwan Univ., Korea)

P2-11

A Quantitative Study of Charge Injection Balance on Performances of QLEDs via Analyzing Singular Carrier DevicesSun-Kyo Kim and Yong-Seog Kim (Hongik Univ., Korea)

P2-12

Investigation of Nanostructures and Energy Level of CsPbX3 Quantum Dots on the Performance of Light Emitting DiodesQuyet Van Le and Soo Young Kim (Chung-Ang Univ., Korea)

P2-13

Fabrication of Flexible Micro-LED Display Using Adhesive Film-Based Transfer TechnologyChang Wan Kim, Do Hyun Kim (Korea Advanced Nano Fab. Center, Korea), JinSub Park (Hanyang Univ., Korea), Chan Soo Shin, and JeHyuk Choi (Korea Advanced Nano Fab. Center, Korea)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-14

Roll Transfer of Micro–LED with Direct Electrical Interconnection via Solder Paste

Yun Hwangbo (KIMM, Korea), Sung-Uk Yoon (UST, Korea), and Jae-Hyun Kim (KIMM, Korea)

P2-15

Fabrication of Passive-Matrix Micro-LEDs for Display Applications

Soo-Young Choi, Chang-Mo Kang, Seung-Hyun Mun, and Dong-Seon Lee (GIST, Korea)

P2-16

Experimental Big-Data Analysis for InGaN/GaN MQWs Structure Optimization with Graphene Layer

Jae-Kyung Choi (KISTI, Korea), Goh-Myeong Bae (UNIST, Korea), Seongho Seo, Hyunsang Chung, Jongseok Kang (KISTI, Korea), and Soon-Yong Kwon (UNIST, Korea)

P2-17

Epidermal Near-Infrared Organic Phototransistor for Cardiovascular Monitoring

Huihua Xu (Sun Yat-Sen Univ., China), Ni Zhao (The Chinese Univ. of Hong Kong, China), and Chuan Liu (Sun Yat-Sen Univ., China)

P2-18

Room-Temperature Solution-Synthesized p-Type Copper(I) Iodide Semiconductors for Transparent Thin Film Transistors and Complementary ElectronicsAo Liu, Huihui Zhu, Won-Tae Park, Yong Xu, and Yong-Young Noh (Dongguk Univ., Korea)

P2-19

Impacts of Additive Uniaxial Strain on Hole Mobility in Bended p-Channel LTPS TFTs on PlasticsJae Seob Lee, Thanh Tien Nguyen, Joon Woo Bae, Gyoo Chul Jo, Yong Su Lee, Sung Hoon Yang, Hye Yong Chu, and Jin Oh Kwag (Samsung Display Co., Ltd., Korea)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-20

A High-k Fluorinated P(VDF-TrFE)-g-PMMA Polymer Insulator for High-Performance Organic Field-Effect TransistorsEul-Yong Shin (Dongguk Univ., Korea), Hye Jin Cho, Sung Woo Jung, Chang Duk Yang (UNIST, Korea), and Yong-Young Noh (Dongguk Univ., Korea)

P2-21

Mixed-Dimensional 1D ZnO–2D WSe2 Van der Waals Heterojunction Device for Optoelectronic ApplicationJong Tae Ahn, Hyun Tae Choi, Hyo Sun Lee, and Do Kyung Hwang (KIST, Korea)

P2-22

Charge Injection Memory Device Based on Black Phosphorous Nanosheets for Charge Trapping and Active Channel LayersHyun Tae Choi, Jong Tae Ahn, and Do Kyung Hwang (KIST, Korea)

P2-23

Suppressed Ion Migration in Perovskite Thin Film Transistors at Room TemperatureHuihui Zhu, Ao Liu and Yong-Young Noh (Dongguk Univ., Korea)

P2-24

Review of Simultaneous Ultraviolet and Thermal Treatment for Oxide Thin-Film TransistorYoung Jun Tak, Won-Gi Kim, Sung Pyo Park, Hee Jun Kim, and Hyun Jae Kim (Yonsei Univ., Korea)

P2-25

Improving Electrical Characteristic and Stability of Indium- Gallium-Zinc Oxide Thin-Film Transistors by Ethyl Cyanoacrylate Passivation LayerHyuk Joon Yoo, Young Jun Tak, Won-Gi Kim, Yeong-Gyu Kim, and Hyun Jae Kim (Yonsei Univ., Korea)

P2-26

New Fabrication Method of Solution-Processed Oxide Thin-Film Transistors for Improving Electrical Characteristics via Photocatalytic ReactionJun Ki Kang, Sung Pyo Park, Jae Won Na, Jin Hyeok Lee, Dong Woo Kim, and Hyun Jae Kim (Yonsei Univ., Korea)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-27

Doping Effects of Cesium Carbonate on Semiconducting Single-Walled Carbon Nanotubes Transistors

Ji-Young Go, Dong Seob Ji, Won-Tae Park, and Yong-Young Noh (Dongguk Univ., Korea)

P2-28

High Performance and Stable Naphthalene Diimide Based N-Channel Organic Field-Effect Transistors by Polyethylenimine Doping

Dang Xuan Long and Yong-Young Noh (Dongguk Univ., Korea)

P2-29

Effect of Structure Properties of Solution-Processed Ultrathin Indium Oxide Electrochemical Transistors under the Physiological Conditions

Yun Young Choi, Se Rin Lim, Tae In Kwon, and You Seung Rim (Sejong Univ., Korea)

P2-30

Fabrication of Indium–Gallium–Zinc Oxide Phototransistor with Titanium Dioxide for Visible Light Detection

Dong Woo Kim, I Sak Lee, Jae Kyum Lee, Jeung Ha Oh, and Hyun Jae Kim (Yonsei Univ., Korea)

P2-31

Solution-Processable Small-Anion Salts as a Dopant of Organic Conjugated Polymers for Non-Volatile Organic Field Effect Transistor Memory Device

Ting-Feng Yu (Nat'l Taipei Univ., Taiwan), Chu-Chen Chueh (Nat'l Taiwan Univ., Taiwan), and Wen-Ya Lee (Nat'l Taipei Univ., Taiwan)

P2-32

Low-Temperature Solution-Processed Lanthanum Doped Aluminum Oxide Gate Dielectrics for High-Performance Metal Oxide Thin Film Transistors

Jae Young Kim, Woo Bin Lee, and Yong-Hoon Kim (Sungkyunkwan Univ., Korea)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-33

Thread-like Single-Walled Carbon Nanotube Fibre-Transistors and Complementary Logic Circuits for Advanced Electronic-Textile DisplaysJae Sang Heo, Jun Ho Lee (Chung-Ang Univ., Korea), Yong-Hoon Kim (Sungkyunkwan Univ., Korea), and Sung Kyu Park (Chung-Ang Univ., Korea)

P2-34

Withdrawal

P2-35

The Improvement of Electrical Performance of ZnON TFTs Using Ultra-Fast Intensive Pulse Light (IPL) Process under Room TemperatureHyun-Jun Jeong, Hyun-Mo Lee, Ki-Lim Han, Eun-Jae Park, Ji-Eun Hwang, Kyung-Chul Ok, Chung-Hyeon Ryu, Hyun-Jun Hwang, Hak-Sung Kim, and Jin-Seong Park (Hanyang Univ., Korea)

P2-36

All-Solution-Processed Metal Oxide/Chalcogenide Hybrid-Structure Phototransistors for Full-Color and Fast Dynamic Image SensingSung Woon Cho, Sung Hyeon Jung, and Hyung Koun Cho (Sungkyunkwan Univ., Korea)

P2-37

Improvement in Various Relevant Properties of Oxide/Metal/Oxide Multilayer by Gas Control for Transparent Conductive Oxide ApplicationJoohee Jang and Ji-Won Choi (KIST, Korea)

P2-38

Directly Assembled Flexible Solid-State Micro-Battery on Polymer SubstrateHaena Yim, Hyun Seok Lee, and Ji-Won Choi (KIST, Korea)

P2-39

High-Performance of IZO/IGZO Double Channel Thin Film Transistor Fabricated by Atomic Layer DepositionMin Hoe Cho, Hyeon Joo Seul, Cheol Hee Choi, Hyun Ji Yang (Hanyang Univ., Korea), Pil Sang Yun, Jong-Uk Bae, Kwon-Shik Park (LG Display Co., Ltd., Korea), and Jae Kyong Jeong (Hanyang Univ., Korea)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-40

Metal-Oxide Semiconductor Properties by Variation of Cation Composition via Atomic Layer Deposition System

Hyeon Joo Seul, Min Hoe Choi, Min Jae Kim, and Jae Kyeong Jeong (Hanyang Univ., Korea)

P2-41

P-Type Electrical Characteristics of Metal Oxychalcogenide Thin-Film Transistors with a Magnetron Sputtering

Bae Keun Yoo, Tai Kyu Kim, Sung Yeon Yim, and Jae Kyeong Jeong (Hanyang Univ., Korea)

P2-42

Enhancement of Indium Zinc Tin Oxide Transistors Field-Effect Mobility by Tantalum Metal Capping Method

Nuri On, Hyun Ji Yang, and Jae Kyeong Jeong (Hanyang Univ., Korea)

P2-43

Effect of Hydrogen Diffusion on the Stability of a-IGZO TFTs under Positive Bias Temperature Stress

Dong-Gyu Kim, Myeong-Ho Kim, and Duck-Kyun Choi (Hanyang Univ., Korea)

P2-44

High Mobility Al-Doped In-Sn-Zn-O Thin-Film-Transistors with Molybdenum Alloy Copper Barrier Source/Drain Electrode

Dae Ho Kim, Jung-Cheol Shin (KAIST, Korea), Jörg Winkler (PLANSEE SE, Austria), Hennrik Schmidt (PLANSEE (Shanghai) High Performance Material Ltd., China), and Sang-Hee Ko Park (KAIST, Korea)

P2-45

Near-Infrared Photoresponsivity of ZnON Thin-Film Transistor with Energy Bandtunable Semiconductor

Hyun-Mo Lee, Hyun-Jun Jeong, Eun-Jae Park (Hanyang Univ., Korea), You Seung Rim (Sejong Univ., Korea), and Jin-Seong Park (Hanyang Univ., Korea)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-46

Improved Hole-Accumulation in DPP-Based D-A Type Copolymer Films Using Fluorine Containing DielectricsYi-Na Moon (Pukyong Nat'l Univ., Korea), Jong-Woon Ha, Do-Hoon Hwang (Pusan Nat'l Univ., Korea), and Ji Youl Lee (Pukyong Nat'l Univ., Korea)

P2-47

Detecting Visible Light by Solution Processed Oxide Absorption Layer for IGZO PhototransistorJu Sung Chung, Young Jun Tak, Young Kyu Kim, Won-Gi Kim, Byung Ha Kang, and Hyun Jae Kim (Yonsei Univ., Korea)

P2-48

Analysis of Carrier Transport in High-Mobility InGaZnOx-Hetero- Channel Thin-Film TransistorsDaichi Koretomo, Ryunosuke Higashi, and Mamoru Furuta (Kochi Univ. of Tech., Japan)

P2-49

Surface Passivation Effect of Printed Metal Oxide Semiconductors- Based Electrochemical Transistors for pH SensorsJoon Hui Park and You Seung Rim (Sejong Univ., Korea)

P2-50

Channel Shortening Effects of Oxide Semiconductor Thin Film Transistor Depends on Mobility of Active MaterialsSeong Jae Kim, Seung Hee Lee, Jung Cheol Shin, Woo Seok Jeong, and Sang-Hee Ko Park (KAIST, Korea)

P2-51

Sequential Electric-Field Treatment for Amorphous Indium-Gallium-Zinc Oxide Thin-Film TransistorsHee Soo Lee and Hyun Jae Kim (Yonsei Univ., Korea)

P2-52

Correlation between the Spin Density of SiOx for Passivation Layer and BTS ΔVth of IGZO TFTsJee Ho Park, So Hyung Lee, Hee Sung Lee, Sung Ki Kim, Kwon-Shik Park, and Soo-Young Yoon (LG Display Co., Ltd., Korea)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-53

Black Matrix with Light Scattering Particles for the Enhancement of Visibility of Laser Beam on Display PanelsGi Eun Kim, Dong Kyun Shin, Jin Young Lee, and Jong Woon Park (Korea Univ., Korea)

P2-54

No-Show

P2-55

Perceived Legibility of Red Primary OLED DisplayDa Eun Park, Yoon-Jung Kim (Ewha Womans Univ., Korea), Hyo Sun Kim, Young-Jun Seo (Samsung Display Co., Ltd., Korea), and Yung Kyung Park (Ewha Womans Univ., Korea)

P2-56

Preferred Font Size in Transparent OLED DisplaysHyo Sun Kim (Samsung Display Co., Ltd., Korea), Hye Young Ha (UNIST, Korea), Young-Jun Seo, Seung Bae Lee, Sung-Chan Jo (Samsung Display Co., Ltd., Korea), and Young Shin Kwak (UNIST, Korea)

P2-57

Preferred Primary Color Comparisons between Head Mounted Display and Liquid-Crystal DisplaySe Min Oh, Young Shin Kwak (UNIST, Korea), Hyo Sun Kim, and Young-Jun Seo (Samsung Display Co., Ltd., Korea)

P2-58

No-Show

P2-59

No-Show


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-60

The Image Enhancement Methodology and FPGA System for Low Power DesignGaoming Sun, Zhengde Lai, Quan Yang, Yuxin Bi, Yang Gao, and Zhenkun Song (BOE Tech., Group Co., Ltd., China)

P2-61

No-Show

P2-62

An Adaptive Mode Changing Buck-Boost DC-DC ConverterMuhammad Abrar Akram, Ji-Hoon Park, Yong-In Park, Brian Kim, and In-Chul Hwang (Kangwoon Nat'l Univ., Korea)

P2-63

The High Performance Compression Algorithm for Display Device and SystemSeok Hwan Roh, Geun Young Jeong, Ho Suk Maeng, and Won Jun Choe (Samsung Display Co., Ltd., Korea)

P2-64

Multi-Level Memory-in-Pixel Circuit Comprising CMOSJae-Hee Jo (Kyung Hee Univ., Korea), Hoon-Ju Chung (Kumoh Nat'l Inst. of Tech., Korea), and Seung-Woo Lee (Kyung Hee Univ., Korea)

P2-65

An 8-bit Micro-LED Microdisplay Driver IC

Pei-Yi Lai Lee, Xing-Wei Huang, and Chih-Wen Lu (Nat'l Tsing Hua Univ., Taiwan)

P2-66

No-Show


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-67

Comparison of Integrated Gate Drivers in the Viewpoint of Fault Tolerance

Jae-Hee Jo (Kyung Hee Univ., Korea), Hoon-Ju Chung (Kumoh Nat'l Inst. of Tech., Korea), and Seung-Woo Lee (Kyung Hee Univ., Korea)

P2-68

Design and Fabrication of Hybrid Structure for Improved Light Extraction of a Sheetless Backlight Unit

Jung Suk Bang, Kwang Soo Bae, Min Jeong Oh, Young Je Cho, and Dong Whan Kim (Samsung Display Co., Ltd., Korea)

P2-69

TFT Leaking Modeling Based on Flicker Measurement

Dowon Kim, Seok-Jeong Song, Ki-Hyuk Seol, Young In Kim, Seungjun Park (Kyung Hee Univ., Korea), Jae Hoon Lee, Jai-Hyun Koh, Heendol Kim, Soo-Yeon Lee, Gyu-Su Lee (Samsung Display Co., Ltd., Korea), and Hyoungsik Nam (Kyung Hee Univ., Korea)

P2-70

Enhancement of View Angle for 3D Medical Display

Zhou Chun Miao, Hong Tao, Zhang Xiao, Leng Chang Lin, Weiwei, and Yin Xin She (BOE Tech. Group Co., Ltd., China)

P2-71

SMV 3D Contents Generation Based on TDF Volume Raycasting

Byoungkyun Kim, Byeong-Ho Choi, and Youngbae Hwang (KETI, Korea)

P2-72

High Accurate Three-Dimensional Computational Reconstruction Algorithm in Integral Imaging Considering the Diffraction Pattern of the Lenslet Aperture

Kotaro Inoue, Byungwoo Cho, Hui Yun (Hankyong Nat'l Univ., Korea), Min-Chul Lee (Kyushu Inst. of Tech., Japan), Cheol-Su Kim (Gyeongju Univ., Korea), Jungsik Koo, Jiyong Park (GERI, Korea), and Myungjin Cho (Hankyong Nat'l Univ., Korea)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-73

Enhanced Depth Estimation Algorithm in Integral Imaging

Kotaro Inoue, Byungwoo Cho, Hui Yun (Hankyong Nat'l Univ., Korea), Min-Chul Lee (Kyushu Inst. of Tech., Japan), Cheol-Su Kim (Gyeongju Univ., Korea), Jungsik Koo, Jiyong Park (GERI, Korea), and Myungjin Cho (Hankyong Nat'l Univ., Korea)

P2-74

Enhancement of Both Lateral and Longitudinal Resolution of Integral Imaging

Hui Yun, Byungwoo Cho, Kotaro Inoue (Hankyong Nat'l Univ., Korea), Min-Chul Lee (Kyushu Inst. of Tech., Japan), Cheol-Su Kim (Gyeongju Univ., Korea), Jungsik Koo, Jiyong Park (GERI, Korea), and Myungjin Cho (Hankyong Nat'l Univ., Korea)

P2-75

Computational Volumetric Reconstruction of Integral Imaging with Considering Continuously Integer-Valued Shifting Pixel

Byungwoo Cho, Hui Yun, Kotaro Inoue (Hankyong Nat'l Univ., Korea), Min-Chul Lee (Kyushu Inst. of Tech., Japan), Cheol-Su Kim (Gyeongju Univ., Korea), Jungsik Koo, Jiyong Park (GERI, Korea), and Myungjin Cho (Hankyong Nat'l Univ., Korea)

P2-76

Three-Dimensional Visualization of Integral Imaging with Profilometry and Fourier Ptychography


P2-77

Three-Dimensional QR Code with Enhanced Security Using Coordinate Transformation



2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-78

Holographic Device Based on Reversible Electrodeposition TechnologySeong M. Cho, Sujung Kim, Yong-Hae Kim, Tae-Youb Kim, Sang Hoon Cheon, Joo Yeon Kim, Chil Seong Ah, Juhee Song, Hojun Ryu, Chi-Sun Hwang, and Jeong-Ik Lee (ETRI, Korea)

P2-79

Improvement of Three-Dimensional Biological Imaging with Integral ImagingMasaharu Tashiro (Kyushu Inst. of Tech., Japan), Kotaro Inoue, Myungjin Cho (Hankyong Nat'l Univ., Korea), and Min-Chul Lee (Kyushu Inst. of Tech., Japan)

P2-80

Scatter Media Removal Method of Fourier PtychographyNaohiro Kikutake (Kyushu Inst. of Tech,, Japan), Kotaro Inoue (Hankyong Nat'l Univ,, Korea), Naoki Konishi (Kyushu Inst. of Tech,, Japan), Myungjin Cho (Hankyong Nat'l Univ,, Korea), and Min-Chul Lee (Kyushu Inst. of Tech,, Japan)

P2-81

High Speed Processing of Occlusion Removal Method by Using GPGPU OptimizationMin-Chul Lee, Masaharu Tashiro, Jae-Hoon Lee (Kyushu Inst. of Tech., Japan), Kotaro Inoue, Myungjin Cho (Hankyong Nat'l Univ., Korea)

P2-82

No-Show

P2-83

DFD Display by Aerial Image Formed on 2D Display SurfaceYoshiki Terashima (Utsunomiya Univ., Japan), Shiro Suyama (Tokushima Univ., Japan), and Hirotsugu Yamamoto (Utsunomiya Univ., Japan)

P2-84

Forming an Enlarged Aerial Image by Use of a Curved Beam Splitter in AIRRYusuke Seki, Ryosuke Kujime, and Hirotsugu Yamamoto (Utsunomiya Univ., Japan)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-85

Ultrafast Switching of Highly Aligned Bent-Core Liquid Crystal(LC) DomainMin Jeong Shin (KAIST, Korea), Hyungju Ahn (POSTECH, Korea), Damian Pociecha, Ewa Gorecka (Univ. of Warsaw, Poland), and Dong Ki Yoon (KAIST, Korea)

P2-86

No-Show

P2-87

No-Show

P2-88

The Effects of Surface Morphology on Azimuthal Anchoring EnergyIn Hye Lee and Dong Myung Shin (Hongik Univ., Korea)

P2-89

No-Show

P2-90

Independent Control of Haze and Transmittance Using a Dye-Doped Liquid Crystal Phase Grating DeviceByoung-Gyu Jeon, Tae-Hoon Choi, Jae-Hyeon Woo, and Tae-Hoon Yoon (Pusan Nat'l Univ., Korea)

P2-91

Switching between Transparent and Translucent States by Electrohydrodynamic Effect in a Liquid Crystal Mixture without Ion DopantYoung-Seo Jo, Tae-Hoon Choi, Seong-Min Ji, and Tae-Hoon Yoon (Pusan Nat'l Univ., Korea)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-92

No-Show

P2-93

No-Show

P2-94

Homeotropic Alignment of Nematic Liquid Crystal Using Fumed SilicaEun Young Park, Hae Seong Jo, Junyong Lee, Jeong-Seon Yu, and Jong-Hyun Kim (Chungnam Nat'l Univ., Korea)

P2-95

Studies on Ordering of Discotic Lyotropic Liquid Crystals on Alignment LayersHyeong Wook Kim, Sang Hee Won, Sung Tae Shin, and Bo Sung Kim (Korea Univ., Korea)

P2-96

Fabrication of Plastic TN-LCD Using In-Cell Coatable Polarizers by Polymerizable Smectic LCEunche Oh, Rui He, and Myong-Hoon Lee (Chonbuk Nat'l Univ., Korea)

P2-97

Manufacturing and Evaluation of Coated Polarizer

Seung-Eun Baik and Myong-Hoon Lee (Chonbuk Nat'l Univ., Korea)

P2-98

"Synthesis and Properties of Smectic Reactive Mesogen for Guest-Host” System Thin-Film Polarizer

Yang Ye, Rui He, and Myong-Hoon Lee (Chonbuk Nat'l Univ., Korea)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-99

No-Show

P2-100

Novel Approach to Realize the High Transmittance of a Large-Sized LCD with a hG-2D TechnologyKwangsoo Bae, Jungsuk Bang, Minjeong Oh, Young Je Cho, and Dong Hwan Kim (Samsung Display Co., Ltd., Korea)

P2-101

Defect Zero Vertical Alignment (DZVA) Mode for High Transmittance of Liquid Crystal DisplaysMinjeong Oh, Kwangsoo Bae, Jungsuk Bang, Young Je Cho, and Donghwan Kim (Samsung Display Co., Ltd., Korea)

P2-102

Liquid Crystal Capsule Size Distribution Dependence of Electro-Optic Properties in Coacervation Type Black PDLCsHee-Sang Yang, Seong-Jun Lee, Eun-Jin Kim, Se-Yong Eom (Hoseo Univ., Korea), Da-Som Yoon (NDIS Corp., Korea), and Soon-Bum Kwon (Hoseo Univ., Korea)

P2-103

Liquid Crystal Based Smart Window to Intensively Block Strong Light in a Specific Direction

Seong-Jun Lee, Hee-Sang Yang, Eun-Jin Kim (Hoseo Univ., Korea), Da-Som Yoon, Hee-Sang Yoo (NDIS Corp., Korea), and Soon-Bum Kwon (Hoseo Univ., Korea)

P2-104

Smart Window Utilizing Three States of Cholesteric Liquid CrystalsEun-Jin Kim (Hoseo Univ., Korea), Da-Som Yoon (NDIS Corp., Korea), Hee-Sang Yang, Seong-Jun Lee, Se-Yong Eom, and Soon-Bum Kwon (Hoseo Univ., Korea)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-105

Fabrication of Liquid Crystal Micro-Pattern via Applying Electric FieldRa You, Yun-Seok Choi, Minjeong Shin, Min-Kyo Seo, and Dong Ki Yoon (KAIST, Korea)

P2-106

Achievement of Homogeneous Planar Alignment of Nematic Liquid Crystals in Vertically Aligned Cell Using Azo-Dye Additive and Linearly Polarized LightVineet Kumar, Aboozar Nasrollahi, Avinash Kumar Rella (Chonbuk Nat'l Univ., Korea), Ho Lim, Keun Chan Oh, Jae Jin Lyu (Samsung Display Co., Ltd., Korea), Myong-Hoon Lee, and Shin-Woong Kang (Chonbuk Nat'l Univ., Korea)

P2-107

High Contrast Ratio Polarizer-Less Reflective Display Using Dichroic DyeChang Suk Lee, Yun Jin Heo, Sung Guk Lee, Manda Ramesh, Young Jin Lim, and Seung Hee Lee (Chonbuk Nat'l Univ., Korea)

P2-108

Effect of Nanoconfinement and Surface Treatment on Heliconical Structure of Twist Bend Nematic Liquid Crystal PhaseR. You, W. Park (KAIST, Korea), E. Carlson (Univ. of Colorado, USA), S. H. Ryu, M. J. Shin (KAIST, Korea), E. Guzman (Univ. of Colorado, USA), H. Ahn (POSTECH, Korea), T. J. Shin (UNIST, Korea), D. M. Walba, N. A. Clark (Univ. of Colorado, USA), and D. K. Yoon (KAIST, Korea)

P2-109

Cholesteric Liquid Crystal Linear-Polarization RotatorKo-Ting Cheng, Cheng-Kai Liu, Chian-Yu Chiu (Natl' Central Univ., Taiwan), Stephen M. Morris (Univ. of Oxford, UK), Min-Cheng Tsai, and Chii-Chang Chen (Natl' Central Univ., Taiwan)

P2-110

Fabrication of the Multi-Functional Films Based on Aligned CNTs Sheet for LCD ApplicationTae Hyung Kim, Yul Ki Kim, Kyeong Jun Cho (Chonbuk Nat'l Univ., Korea), Jong Gil Park, Young Hee Lee (Sungkyunkwan Univ., Korea), and Seung Hee Lee (Chonbuk Nat'l Univ., Korea)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-111

Enhancing Light Extraction and Angular Color Stability of Top-Emitting OLED by Using Spontaneously Formed Organic Wrinkle StructureSangsoo Jang (Chungnam Nat'l Univ., Korea), Jaehyun Moon, Jonghee Lee, Chul Woong Joo, Hyunsu Cho, Nam-sung Cho (ETRI, Korea), Sung Yun Yang (Chungnam Nat'l Univ., Korea), and Byoung-Hwa Kwon (ETRI, Korea)

P2-112

Circularly Polarized Emission Depending on a Surface-Induced Anisotropy of Mesogenic Conjugate PolymerJong-Ha Woo, Dong-Myung Lee, Chang-Jae Yu, and Jae-Hoon Kim (Hanyang Univ., Korea)

P2-113

Patterned Circularly Polarized Emission of Twisted Conjugated Polymer by AFM LithographyKyung-Min Baek, Seung-Hyun Jeong, Jae-Hoon Kim, and Chang-Jae Yu (Hanyang Univ., Korea)

P2-114

Synthesis of Host Materials Based on Silane Moiety for Blue Phosphorescent Organic Light-Emitting DiodesJuHui Yun, SiHyun Han, and JunYeob Lee (Sungkyunkwan Univ., Korea)

P2-115

β Phase Conformation of Polyfluorenes by Adopting Solvent Vapor Treatment and Rubbing Process for Enhanced Color Purity and Efficiency in Polymer Light Emitting DiodeChi-Heon Kim, Byeonggon Kim, and Hak-Rin Kim (Kyungpook Nat'l Univ., Korea)

P2-116

Development of Solution-Processable Blue/Hybrid-White Organic Light-Emitting Diodes Based on Thermally Activated Delayed FluorescenceChul Woong Joo, Hyunsu Cho, Byoung-Hwa Kwon, Nam Sung Cho (ETRI, Korea), Youheon Kim, Yun-Hi Kim (Gyeongsang Nat'l Univ., Korea), and Jonghee Lee (ETRI, Korea)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-117

High-Efficient Tetrahedral Silicon-Based Organic Light-Emitting Diodes

Sunyoung Sohn (POSTECH, Korea), Kwang Hun Park, Soon-Ki Kwon (Gyeongsang Nat'l Univ., Korea), Han-Koo Lee, Hyungju Ahn, Sungjune Jung (POSTECH, Korea), and Yun-Hi Kim (Gyeongsang Nat'l Univ., Korea)

P2-118

D-EML PHOLED Structure to Improve Roll Off Phenomenon and Side Peak

Youngjae Jeon, Jewon Yoo, Sungjae Park (Sungkyunkwan Univ., Korea), Sangwon Kim, and Sangsoo Kim (Samsung Display Co., Ltd., Korea)

P2-119

Quantification of the Level of the Pixel Shrinkage Using Highly Accelerated Solar Exposure System

Ki Young Yeon, Dongyoun Yoo, Woo Young Lee, Sooim Jeong, YoungGil Park, and Nari Ahn (Samsung Display Co., Ltd., Korea)

P2-120

A Design Approach for Highly Efficient HyperfluorescenceTM OLED Materials & Device Stacks

YuSeok Yang (Kyulux Inc., Korea), Ayakata Endo (Kyulux Inc., Japan), Timothy Hirzel (Kyulux Inc., USA), and Shuo-Hsien Cheng (Kyulux Inc., Taiwan)

P2-121

Formation of Organic Thin Films by Molecular Layer Epitaxy

T. N. Kopylova, V. Burtman, S.Y. Nikonov, K. M. Degtyarenko (Tomsk State Univ., Russia), and I. V. Kulemanov (NUST MISiS, Russia)

P2-122

Improvement of Device Performances of the Solution Processed OLED by Interface Mixing

Ji-Ho Kang, Seungjun Lee, Yongsup Park, and Min Chul Suh (Kyung Hee Univ., Korea)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-123

Orientation of Host Molecules Dictates Molecular Orientation of a Pt(II) Complex Doped in Organic Thin Films

Jin-Suk Huh, Kwon-Hyeon Kim, Chang-Ki Moon, and Jang-Joo Kim (Seoul Nat'l Univ., Korea)

P2-124

Light Modulation of Top Emission Organic Light Emitting Diodes Showing Strong Microcavity Effect by Using Nano-Porous Polymer Film

Seon Hyeak Jung, Nam Su Kim, and Min Chul Suh (Kyung Hee Univ., Korea)

P2-125

Blue phOLED with Improved Operational Lifetime Using High Triplet Level Exciplex Forming Host

Hyoungcheol Lim, Hyun Shin, Kwon-Hyeon Kim, Seung-Jun Yoo, Jin-Suk Huh, and Jang-Joo Kim (Seoul Nat'l Univ., Korea)

P2-126

Polymer Dispersed Liquid Crystal Layer for Light Extraction of Organic Light Emitting Diodes

Akpeko Gasonoo, Ahreum Kim, Jae-Hyun Lee, and Yoonseuk Choi (Hanbat Nat'l Univ., Korea)

P2-127

A Safe Lighting Source after Dusk Based on Low-Color Temperature OLED

Deepak Kumar Dubey, Rohit Ashok Kumar Yadav, Sujith Sudheendran Swayamprabha, and Jwo-Huei Jou (Nat'l Tsing Hua Univ., Taiwan)

P2-128

High Efficiency Top-Emission Organic Light Emitting Diodes Realized Using a Newly Developed Low Absorption Pure Ag Cathode Configuration

Seong Keun Kim, Ramchandra Pode, and Jang Hyuk Kwon (Kyung Hee Univ., Korea)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-129

Tandem Structured 2-Color Micro-Polymer Light-Emitting Diodes (μ-PLEDs)Keun-Yeong Choi (Soongsil Univ., Korea), Han Wool Park, Do Hwan Kim (Hanyang Univ., Korea), and Hojin Lee (Soongsil Univ., Korea)

P2-130

Investigation of Thermally Activated Delayed Fluorescence Property Depending on the Poitions of Indole Substitution in Carbazole Donor MoietyHyuna Lee, Dae Hyun Ahn, Seung Yeon Lee, Si Woo Kim, Ju Young Lee, and Jang Hyuk Kwon (Kyung Hee Univ., Korea)

P2-131

Structure of OLED Device for Enhancing Anti-Reflection PerformanceDoyeon Lee, Je-won Yoo, Sung-jae Park, Suk-ho Song, and J. K. Song (Sungkyunkwan Univ., Korea)

P2-132

Electron Transport Type Exciton Blocking Materials Derived from Trisdibenzofuran for Blue Phosphorescent Organic Light-Emitting DiodesJu Hui Yun, Yu Jin Kang, Si Hyun Han, and Jun Yeob Lee (Sungkyunkwan Univ., Korea)

P2-133

Application of Novel Indole Moiety for Highly Efficient Thermally Activated Delayed Fluorescent EmitterHa Lim Lee, Si Hyun Han, and Jun Yeob Lee (Sungkyunkwan Univ., Korea)

P2-134

The Effect of Horizontal Dipole Ratio on the Efficiency of Organic Light-Emitting Diode with an External Scattering LayerJinouk Song, Jaeho Lee, Woochan Lee, and Seunghyup Yoo (KAIST, Korea)

P2-135

Molecular Design Strategy of Charge Transfer Type Blue Fluorescent Emitters for Efficient Deep Blue Organic Light Emitting DiodesSeung-Je Woo (Seoul Nat'l Univ., Korea), Youheon Kim, Yun-Hi Kim (Gyeongsang Nat'l Univ., Korea), and Jang-Joo Kim (Seoul Nat'l Univ., Korea)


2B Hall (1F)

Poster Session II

Date: Aug. 30 (Thu.), 2018Time: 14:00~15:30

P2-136

Enhanced Charge Balance and Recombination Movement Tactics in Green Phosphorescent Organic Light Emitting Diodes by Varying The Electron Transport Layer ThicknessSung Woo Kim, Won Ho Lee, Hassan Hafeez, P. Justin Jesuraj, and Seung Yoon Ryu (Korea Univ., Korea)

P2-137

Novel Tri-Fluro-Phenyl Substituted Carbazole as Hole Transporting Material for Efficient Organic Light-Emitting DiodesSujith Sudheendran Swayamprabha, Deepak Kumar Dubey, Rohit Ashok Kumar Yadav (Nat'l Tsing Hua Univ., Taiwan), Saulius Grigalevicius (Kaunas Univ. of Tech., Lithuania), and Jwo-Huei Jou (Nat'l Tsing Hua Univ., Taiwan)

P2-138

Controlling Carrier Accumulation and Exciplex Formation in PHOLEDs Using CBP:TPBi as a Co-Host Emission LayerSang-won Kim, Won-hyeok Park, Taek-ki Lee, and Sang Soo Kim (Sungkyunkwan Univ., Korea)

P2-139

Effect of Deposition Rate of NPB as a Hole Transport Layer on Electrooptical Performance of The PHOLED DeviceTae-hyeon Yang, Won-hyeok Park, Sang-won Kim, and Sang Soo Kim (Sungkyunkwan Univ., Korea)

P2-140

Micro-Cavity Resonance Control of the Top Emission Blue PHOLED Devices by Controlling The Thickness of The Electron Transport LayerIn-Seon Lee, Sang-Won Kim, Won-Hyeok Park, and Sang Soo Kim (Sungkyunkwan Univ., Korea)

P2-141

Blocking Layer Effects on The Triplet Exciton Diffusion in PHOLEDMin-Joon Kim, Won-hyeok Park, Dongpil Park, and Sang Soo Kim (Sungkyunkwan Univ., Korea)

P2-142

High Refractive Index Nanocomposite Material for OLED ApplicationsSang-Hun Choi, Peter C. Guschl, and Matthew D. Healy (Pixelligent Technologies LLC, USA)


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-1

High Mobility Transparent Thin Film Transistor with 5nm-Indium Oxide by Atomic Layer DepositionJongchan Lee (Korea Univ., Korea), Seung-Youl Kang, Jaehyun Moon, Jae-Eun Pi, Seong-Deok Ahn, Himchan Oh (ETRI, Korea), and Kwang-Ho Kwon (Korea Univ., Korea)

P3-2

Flexible Oxide TFT Fabricated on 350oC Processable Glass-Fabric Reinforced Siloxane Hybrid (GFRHybrimer) FilmYoung-Woo Lim, Seung-Hee Lee, Yong Ho Kim, Sang-Hee Ko Park, and Byeong-Soo Bae (KAIST, Korea)

P3-3

Folding Stability of Oraganic-Inorganic Multilayer Near Neutral PlaneSoungbo Ham, Haksoo Lee, and Sungmin Cho (Sungkyunkwan Univ., Korea)

P3-4

Synthesis and Characterization of a Thermally Curable 4-(Trifluorovinyloxy)benzoyl Substituted Poly(4-vinylphenol) for Gate Insulator in Thin Film TransistorGyeongmin Ki and Taek Ahn (Kyungsung Univ., Korea)

P3-5

Low-Temperature Processable, Photo-Curable Polymides as Gate Insulators for Thin-Film TransistorsGyeongmin Ki and Taek Ahn (Kyungsung Univ., Korea)

P3-6

Synthesis and Characterization of Post-Functionalized Photo-Patternable Soluble Polyimide Gate Insulator for Pentacene Thin Film TransistorsGyeongmin Ki and Taek Ahn (Kyungsung Univ., Korea)

P3-7

Ultra-Flat and Transparent Silver Nanowire Network for Flexible and Leakage-Free Organic Light-Emitting DiodesTae Hong Im and Keon Jae Lee (KAIST, Korea)


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018 Time: 14:00~15:30

P3-8

Transparent Intelligent Display Module for Exhibition IndustryHaiyan Wan, Xingqun Jiang, Quanzhong Wang, Weiguo Li, Xiaodong Shi, Fan Yang, Zifeng Wang, and Junning Su (BOE Tech. Group Co., Ltd., China)

P3-9

High-Resolution Patterns of Solution-Processed Organic Light-Emitting Diode Based on Chemically Modified Bank StructureSin-Hyung Lee, Hea-Lim Park, Sujie Kang, and Sin-Doo Lee (Seoul Nat'l Univ., Korea)

P3-10

Improvement in Performance of Solution Processed Organic-Inorganic Hybrid Gate Dielectrics via UV TreatmentJaeSeok Hur, JeongOh Kim, HyeonA Kim, SiHyung Lee, and JaeKyeong Jeong (Hanyang Univ., Korea)

P3-11

Transparent Barrier Electrode with Multilayered Thin Film Structure for Flexible Organic Light Emitting DiodeTae-Woo Lee, Eun Gyo Jeong, Dohong Kim, Jun Hee Han, Ho Seung Lee, and Kyung Cheol Choi (KAIST, Korea)

P3-12

Residual Stress Optimized Encapsulation Barrier with Double Buffer Layer for Transparent and Flexible DisplaysEun Gyo Jeong, Jun Hee Han, and Kyung Cheol Choi (KAIST, Korea)

P3-13

Hybrid Encapsulation Technology of the OLED with Edge Sealing LineGeon Bae, Han-Jun Yun, and Cheol-Hee Moon (Hoseo Univ., Korea)

P3-14

All Solution Processed Organic Light Emitting Diode Using Printed Silver ElectrodeHan-Jun Yun, Geon Bae, and Cheol-Hee Moon (Hoseo Univ., Korea)


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-15

Effect of Soft/Hard Segments in Poly (Tetramethylene Glycol)- Polyurethane for Water Barrier Film

Kyung Seok Kang, Ji-Hong Bae, Chanhyuk Jee, Hyo Jin Jung, and PilHo Huh (Pusan Nat'l Univ., Korea)

P3-16

Activation of IGZO Channel Thin Film Transistors by Electon-Beam Annealing

Moon Uk Cho, Yu-Jung Cha, Tae Kyoung Kim, and Joon Seop Kwak (Sunchon Nat'l Univ., Korea)

P3-17

Ultrathin Thin Film Transistors by Debonding Process Using Water Soluble PVA

Jae Moon Kim, Jongsu Oh, Kyung-Mo Jung (Sungkyunkwan Univ., Korea), KeeChan Park (Konkuk Univ., Korea), Jae-Hong Jeon (Korea Aerospace Univ., Korea), and Yong-Sang Kim (Sungkyunkwan Univ., Korea)

P3-18

No-Show

P3-19

Achieving High Mobility in IGTO Thin-Film Transistors at a Low Temperature via Film Densification

Hyeon-A Kim, JeongOh Kim, JaeSeok Hur, Min Jae Kim, Su Eon Lee, and Jae Kyeong Jeong (Hanyang Univ., Korea)

P3-20

Structural Effects on the Electrical Performance of Indium-Zinc-Oxide Thin-Film Transistor by Zinc Concentration

Dongwook Kim, Hyunji Shin (Hongik Univ., Korea), Jaehoon Park (Hallym Univ., Korea), and Jong Sun Choi (Hongik Univ., Korea)


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-21

Bias Instability of Indium-Doped Zinc-Oxide Thin-Film TransistorDongwook Kim, Hyunji Shin (Hongik Univ., Korea), Jaehoon Park (Hallym Univ., Korea), and Jong Sun Choi (Hongik Univ., Korea)

P3-22

Improvement of Doping Efficiency in Al-Doped ZnO Thin Films with ALD Pulse Sequence ControlHyo Seok Lee and Jaeyeong Heo (Chonnam Nat'l Univ., Korea)

P3-23

Transparent and Flexible Cover Window for Foldable DisplayKang-Han Kim and Yong-Cheol Jeong (KITECH, Korea)

P3-24

The Characterization of AF Film Derived from Inorganic Polysilazane for Electronic DevicesJeong Ju Baek, Han Sol Back, Gwang Sik Song, Young Hun Kim, Ki Cheol Chang, Kyung Ho Choi, and Gyo Jic Shin (KITECH, Korea)

P3-25

A Study on Self-Cleaning Anti-Reflection Characteristics of Polymer/Inorganic Multilayer Thin Films with Plasma Polymer Fluorocarbon as Top LayerMac Kim, Sung Hyun Kim, Tae-Woon Kang, and Sang-Jin Lee (KRICT, Korea)

P3-26

Plasma Polymer Fluorocarbon/Inorganic Multilayer Films for Application to Moisture Barrier Coatings Deposited Using Roll-to-Roll SputteringTae-Woon Kang, Sung Hyun Kim, Mac Kim, and Sang-Jin Lee (KRICT, Korea)

P3-27

Mid-Range Frequency Sputtering of Carbon Allotropes/PTFE Composite: High Hardness Plasma Polymer Fluorocarbon Thin Film StudySung Hyun Kim, Mac Kim, Tae-Woon Kang, and Sang-Jin Lee (KRICT, Korea)


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-28

Optically Isotropic Pitch Length Dependent Tunable Diffraction Gratings with IPS Cell

Srinivas Pagidi, Ramesh Manda, T Arun Kumar, Hyesun Yoo, Sung Guk Lee, Seong Min Song, Young Jin Lim, and Seung Hee Lee (Chonbuk Nat'l Univ., Korea)

P3-29

Encapsulation Characteristics of Improved Graphene Oxide Thin Film for Flexible OLED Displays

Seung-Yeol Yang, Chan-Soo Kim, and Yong-Seog Kim (Hongik Univ., Korea)

P3-30

Enhancing Mechanical and Electrical Performance of Flexible Amorphous InGaZnO Thin-Film Transistors Using Organic/Inorganic Hybrid Buffer Layer

Ki-Lim Han, Hyun-Jun Jeong, Beom-Su Kim, Seong Hyeon Lee, and Jin-Seong Park (Hanyang Univ., Korea)

P3-31

Improvement of Out-Coupling Efficiency of Flexible Organic Light Emitting Diode with Micro-Structure Patterned Parylene Substrate

Ahreum Kim, Akpeko Gasonoo, Young-Ji Lim, Yoonseuk Choi, Jonghee Lee, and Jae-Hyun Lee (Hanbat Nat'l Univ., Korea)

P3-32

Ultra-Thin Glass Covers for Foldable Displays

Seung Kim and June Hyoung Park (Samsung Display Co., Ltd., Korea)

P3-33

Analysis of Recoverable Residual Image in Flexible Organic Light Emitting Diode Displays Using Flexible Substrates

Han Wook Hwang, Seonghwan Hong (Yonsei Univ., Korea), Sang Soo Hwang, Yong Min Ha (LG Display Co., Ltd., Korea), and Hyun Jae Kim (Yonsei Univ., Korea)


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-34

Oxide Semiconductor Based Photo-Memory with a Multilevel Memory Behavior in the Visible Light RegionJin Hyeok Lee, Sung Pyo Park, Tae Soo Jung, Hee Jun Kim, Dong Woo Kim, and Hyun Jae Kim (Yonsei Univ., Korea)

P3-35

Solution-Processed Fluoropolymer Organic Passivation Layers for Highly Stable Solution-Processed Metal-Oxide Thin-Film TransistorsSeung Beom Choi, Seung Ho Song, and Yong-Hoon Kim (Sungkyunkwan Univ., Korea)

P3-36

Top-Illuminated Photodetecting Device with Organic Photodiode and Oxide TFT for Digital Imaging SystemMin Kook Kim, Hyun-Jae Kim, Myo Jeong Choi, Chul Jong Han, Byung Wook Yoo, and Min Suk Oh (KETI, Korea)

P3-37

Threshold Voltage Tuning in Multilayer MoS2 Transistors via Fluorine-Based Plasma TreatmentGeon Wook Yoo, Ji Yeon Ma (Soongsil Univ., Korea), Young Seo Park (Ajou Univ., Korea), So Hyeon Kim, Young Woo Joo (Soongsil Univ., Korea), Jun Seok Heo (Ajou Univ., Korea), and Min Suk Oh (KETI, Korea)

P3-38

Degradation by X-Ray Irradiation of a-IGZO Thin Film Transistors Used in Digital X-Ray Detector

Jun-Sun Lee, Myeong-Ho Kim, Dong-gyu Kim (Hanyang Univ., Korea), Myoung-Su Yang, Youn-Gyoung Chang, Jin-Pil Kim, Young-Jin Yi (LG Display Co., Ltd., Korea), and Duck-Kyun Choi (Hanyang Univ., Korea)

P3-39

No-Show


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-40

Effects of Precursor Engineering on Zinc-Tin Oxide Thin Film TransistorsTae Soo Jung, Hee Soo Lee, Hee Jun Kim, Jin Hyeok Lee, and Hyun Jae Kim (Yonsei Univ., Korea)

P3-41

No-Show

P3-42

Multi-Channel Phase-Demodulation Electrical Inspector in Manufacturing Process for Flat Panel Active-Matrix ArrayUh-Ho Shin and Hyun-Sik Kim (Dankook Univ., Korea)

P3-43

Coplanar a-InGaZnO Thin Film Transistors with Photo-Patterned Ionic-Polymer Gate DielectricDa Yoon Lee, Yong Chan Kim, and Ho Jin Lee (Soongsil Univ., Korea)

P3-44

Large-Scale Dry Etching Using a Linear ECR Plasma Source with Reciprocating Substrate MotionSungYong Kwon, HoWon Yoon, YunSung Jang, SeungMin Shin, Seungjun Yi, and MunPyo Hong (Korea Univ., Korea)

P3-45

Thermal-Free High Dense Thin Film Deposition Using Neutral Particle Beam Assisted Sputtering (NBAS) SystemSeungMin Shin, YunSung Jang, SeungJun Yi, and MunPyo Hong (Korea Univ., Korea)

P3-46

Electrical and Optical Properties of Indium Tin Oxide Films Fabricated by Magnetic Field Shielded Sputtering ProcessSeulGi Kim, DongHyeok Lee, KyungDuck Kim, and MunPyo Hong (Korea Univ., Korea)


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-47

Transparent Flexible Vertical GaN MicroLEDs for Wireless Biomedical Stimulator

Han Eol Lee, Jung Ho Shin, Jung Hwan Park, Jae Hee Lee, and Keon Jae Lee (KAIST, Korea)

P3-48

No-Show

P3-49

No-Show

P3-50

Development of High Resolution Continuous Patterning Technology for Roll-to-Roll Micro-Contact Printing

Ju-Ryong Kim, So-Hyeon Lee, Amos Amoako Boampong, Dong Soo Kim, and Min-Hoi Kim (Hanbat Nat'l Univ., Korea)

P3-51

No-Show

P3-52

No-Show


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-53

No-Show

P3-54

No-Show

P3-55

No-Show

P3-56

No-Show

P3-57

No-Show

P3-58

No-Show


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-59

No-Show

P3-60

No-Show

P3-61

Etching Characteristics of Silicon Nitride Surfaces Using In-Line Equipment with Atmospheric Glow Plasma for Large Size DisplayJang-Sick Park, Yoon-Suk Heo, and Bang-Kwon Kang (APP Co., Ltd., Korea)

P3-62

First OLED Fabrication Using Plane Source EvaporationChang Hun Hwang, Byung Doo Chin, Sung Su Kim, Shin Woong Bang, and Se Ho Choi (Dankook Univ., Korea)

P3-63

Characteristic Improvement of Top Gate InSnGaO (ITGO) TFTHyun Jae Jang, Kyung Deok Kim, Seul Gi Kim, Bo Sung Kim, and Mun Pyo Hong (Korea Univ., Korea)

P3-64

High Mobility Self-Aligned Coplanar Amorphous-Aluminum-Doped- Indium-Zinc-Tin Oxide Thin-Film TransistorsHyun Jae Jung (Korea Univ., Korea), Chi-Sun Hwang, Sung Haeng Cho (ETRI, Korea), and Bo Sung Kim (Korea Univ., Korea)

P3-65

Effects of Substrate Cooling on Ionic Conductivity of Tantalum Oxide Thin Films Prepared by Reactive Sputtering Using Water Vapor InjectionYusuke Ito, Yoshio Abe, Midori Kawamura, Kyung Ho Kim, and Takayuki Kiba (Kitami Inst. of Tech., Japan)


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-66

Plasma Damage-Free Sputtering of AlN Passivation Layer on Organic

Light Emitting Devices

Do-Yeol Yoon, Tae-Young Kim, and Dae-Gyu Moon (Soonchunhyang Univ., Korea)

P3-67

Direct Silver and Copper Electrodes Patterning with Electrohydrodynamic

Jet Printer

Thu Thuy Thi Can, Canh Tuan Nguyen, Jaegun Woo, Yun-Soo Kim, and Woon-Seop Choi (Hoseo Univ., Korea)

P3-68

Effect of the Solvent Mixture and Surface Treatment of Substrate

on the Coffee Ring Stain in Inkjet Printing Process

Jin-Beom Kim, Kang-Han Kim, and Yong-Cheol Jeong (KITECH, Korea)

P3-69

Analysis of SiO2 Thin Film Properties for High Performance TFT

Kanghyun Kim, Younggil Park, Nari Ahn (Samsung Display Co., Ltd., Korea), Dong Hyun Kim, and Jae Woo Lee (Korea Univ., Korea)

P3-70

A New Formation of Multi-layered n+ Silicon Films Using Four-mask process Architecture for Image Sticking Improvement in 32” TV Product

Feng-Yun Yang, An-Thung Cho, James Hsu, Zhen Liu, Kai-Jun Liu, Qiong-Hua Mo, Wade Chen, and York Lu (Chongqing HKC Optoelectronics Tech. Co., Ltd., China)

P3-71

Reliability Improvement of OLED Display Module by Utilizing

Hyper-Viscoelastic Material Characteristic

Wookjae Lee, Youngkuil Joo, and Jungmin Park (Samsung Display Co., Ltd., Korea)


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-72

A Novel Single Substrate LCD Using Patterned Micro-Tunnel ArraysHeekeun Lee, Yeuntae Kim, Veidhes Basrur, Taejin Kong, Daehyun Kim, Hyunmin Cho, Keunkyu Song, Sungchan Jo, and Jinoh Kwag (Samsung Display Co., Ltd., Korea)

P3-73

Effect of Magnetic Field Intensity and Process Parameter on Properties of Amorphous InGaZnO Thin Film Transistors in Sputtering SystemHang Kang, Do Hyun Kim, Chang Kyu Lee, Da Young In, Dong Ju Oh, and Sang Ho Lee (ULVAC Korea. Ltd., Korea)

P3-74

No-Show

P3-75

A Simple and Effective Method to Improve Array Yield in Four-Mask Technology for Large-Size TFT-LCDsJeff Zhou, Yi-Qun Tian, Bang-Tong Ge, Ting-Ting Fu, Feng-Xiang Long, James Xu, Wade Chen, and York Lu (Chongqing HKC Optoelectronics Tech. Co., Ltd., China)

P3-76

Fabrication of Various Optical Retarders by Nanolithography of Alignment LayerHee Jung Ryu and Ji-Hoon Lee (Chonbuk Nat'l Univ., Korea)

P3-77

A Novel Phenothiazinyl Multi-β Oxime Ester PhotoinitiatorWon Jung Lee, Deuk Rak Lee, Jung Sik Choi, and Chun Rim Oh (Samyang Corp., Korea)

P3-78

A Study of Lithium Complex Behavior Change Caused by Thermal Stress under High TemperatureMan Jae Park, Kihyun Kim, Olga Egorova, and Nari Ahn (Samsung Display Co., Ltd., Korea)


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-79

Image Quality for Convex Curved Liquid Crystal Display with High Curvature 800R by Viewing Position

Bum-Jin Yoon (KETI, Korea), Seung-Duk Kim, Kyung-Ha Lee (Tovis, Korea), and Chan-Jae Lee (KETI, Korea)

P3-80

Cu/Cu Barrier Interconnect for the Next-Generation High Resolution Display Fabricated Using Electron Cyclotron Resonance (ECR) Sputtering Method

Wooseok Jeong (KAIST, Korea), Jae-Chul Doe, Jeong Rak Lee, Wan Woo Park (AVACO, Korea), and Sang-Hee Ko Park (KAIST, Korea)

P3-81

Characterization of the Degree of Cure of UV Hybrid Type PSA by Modulus Measurement

Hwa-Jeong Choi, Jong-Ho Shin, Ah-Sell Cho, Mi-Hee Kim, Heemin Yoo, and Eun-Ah Kim (Samsung Display Co., Ltd., Korea)

P3-82

Hydrogen Analysis Using Magnetic Peak Switching by Nano-Secondary Ion Mass Spectrometry

Ji-Hye Lee, Jaedong Choi, Soocheol Park, Myeongkyu Park, Eunah Kim, and Nari Ahn (Samsung Display Co., Ltd., Korea)

P3-83

Effects of the Solvent Formulation on the Pattern Uniformity of An Inkjet-Printed Bipolar Host for Green Phosphorescent Organic Light-Emitting Diodes

Youjung Kang, Jihye Kim, Robert Bail, Chilwon Lee, and Byungdoo Chin (Dankook Univ., Korea)

P3-84

Highly Efficient Deep Blue Fluorescent Organic Light-Emitting Diodes by Using TADF Type Sensitizing Host

Hui Jae Choi, Chil Won Lee, and Byung Doo Chin (Dankook Univ., Korea)


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-85

Four-Mask Process Architecture Using NH3 Plasma Treatment Technology for Image Sticking Improvement in 32” TV ProductFeng-Yun Yang, An-Thung Cho, James Hsu, Zhen Liu, Kai-Jun Liu, Wade Chen, and York Lu (Chongqing HKC Optoelectronics Tech. Co., Ltd., China)

P3-86

Control of the Pattern Resolution for Inkjet-Printed CdSe Quantum Dot Light Emitting DiodeJi-Hye Kim, Gyeong Seok Hwang, You Jung Kang, Robert Bail, Chil Won Lee, and Byung Doo Chin (Dankook Univ., Korea)

P3-87

Advanced Halftone Photolithography Using High Efficient Four-Mask Technology for G8.6 TFT-LCDsAn-Thung Cho, Zhen Liu, James Hsu, Jeff Zhou, Feng-Xiang Long, Feng-Yun Yang, Ting-Ting Fu, Qiong-Hua Mo, Kai-Jun Liu, Bang-Tong Ge, Wade Chen, York Lu (Chongqing HKC Optoelectronics Tech. Co., Ltd., China)

P3-88

Withdrawal

P3-89

Plane Source FMM Evaporation Technology for 2250ppi AMOLEDChanghun Hwang, Sung Su Kim, Shin Woong Bang, Se Ho Choi, and Byung Doo Chin (Dankook Univ., Korea)

P3-91

Three-Dimensionally Structured Voxels and Holographic Color Switching for Volumetric DisplayKota Kumagai, Ibuki Yamaguchi, and Yoshio Hayasaki (Utsunomiya Univ., Japan)

P3-92

Flicker Measurement of 360-Dgree Tabletop Electronic Holographic DisplayJeho Nam and Jinwoong Kim (ETRI, Korea)


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-93

Light Field Imaging System Utilizing Switchable Micro-Lens Array to Improve Depth of Field and Resolution of Reconstructed Image

Tae-Hyun Lee, Min-Kyu Park, Kyung-Il Joo, and Hak-Rin Kim (Kyungpook Nat'l Univ., Korea)

P3-94

Quality Analysis of Light-Waves for Wireless Transmission System of CGHs

Kazuhiro Yamaguchi (Suwa Tokyo Univ. of Science, Japan) and Yuji Sakamoto (Hokkaido Univ., Japan)

P3-95

Influence of Changing Motion Direction on Depth Perception from

Motion Parallax

Yuki Masuda, Ippei Kanayama, Shiro Suyama, and Haruki Mizushina (Tokushima Univ., Japan)

P3-96

Measurement and Estimation of Speckle Distribution in 360-Degree Table-Top Electronic Holographic Display System

Yongjun Lim and Jinwoong Kim (ETRI, Korea)

P3-97

High Resolution Full Parallax Light Field Display with 4 Physiological

Depth Cues

Jaejoong Kwon, Beomshik Kim, Sujung Huh, Joowoan Cho, Juhwa Ha, Subin Jung (Samsung Display Co., Ltd., Korea), Junghoon Lee (Sekonix Co., Ltd., Korea), Keunkyu Song, Hye Yong Chu, and Sungchan Jo (Samsung Display Co., Ltd., Korea)

P3-98

High-Resolution Light Field Acquisition without Defocus Noise

Ni Chen (Chinese Academy of Sciences, China) and Byoungho Lee (Seoul Nat'l Univ., Korea)


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-99

Wide Viewing Angle Holographic Display Using Ultra High Resolution SLMHyesog Lee, Jae-Ho Yu, Young-Chan Kim, Sang-Ho Kim, Cheon-Myeong Lee, Byung-Choon Yang, Sung-Chan Jo, Hye-Yong Chu, and Jin-Oh Kwag (Samsung Display Co., Ltd., Korea)

P3-100

Influence on Visibilityas Anti-Glare Coated Cover Window and Airgapunder Lighting ConditionsChan-Jae Lee and Min-Gi Kwak (KETI, Korea)

P3-101

A Depth-Enhanced Integral Imaging System Using an Active Polarization Switching Device and a Geometric Phase LensMinyoung Park (Sejong Univ., Korea), Kyung-Il Joo, Hak-Rin Kim (Kyungpook Nat'l Univ., Korea), and Hee-Jin Choi (Sejong Univ., Korea)

P3-102

Glass-Ball Three-Dimensional Display with Two-Axis Scanner

Daerak Heo, Sungjin Lim, Geunseop Choi, and Joonku Hahn (Kyungpook Nat'l Univ., Korea)

P3-103

Aerial Interpersonal 3D Screen with AIRR that Shares Your Gesture and Your Screen with an Opposite ViewerRyota Kakinuma, Masaki Yasugi, Shusei Ito, Kengo Fujii, and Hirotsugu Yamamoto (Utsunomiya Univ., Japan)

P3-104

Full Color Holographic Tabletop Display with Video Streaming FunctionJaehan Kim (ETRI, Korea), Kisoo Seol (ASTEL, Korea), Minsik Park, and Jinwoong Kim (ETRI, Korea)

P3-105

No-Show


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-106

No-Show

P3-107

Increase of Flexoelectric Anisotropy of Nematic Liquid Crystal by Doping Bimesogen MoleculesJimin Park, Jongyoon Kim, Jahyeon Koo, Kwang-Un Jeong, and Ji-Hoon Lee (Chonbuk Nat'l Univ., Korea)

P3-108

Transmission Spectrum and Polymer Morphology of Polymer-Stabilized Cholesteric Liquid Crystal with Different Ratio of Mono- and Di-Acrylate Reactive MesogenJongyoon Kim and Ji-Hoon Lee (Chonbuk Nat'l Univ., Korea)

P3-109

Dual Wavelength In Situ Photoalignment of Azodye- and RM-Doped Nematic Liquid CrystalsAboozar Nasrollahi, Vineet Kumar, Le Gia Trung, Myong-Hoon Lee, Shin-Woong Kang (Chonbuk Nat'l Univ., Korea), Ho Lim, Keun Chan Oh, and Jae Jin Lyu (Samsung Display Co., Ltd., Korea)

P3-110

Orientation Control of Universal Liquid Crystal Materials through Simple Scratching Method and Their Electro-Optical ApplicationsAhram Suh and Dong Ki Yoon (KAIST, Korea)

P3-111

Study on Liquid Crystal for High Performance and Power-Saving ModeSeung Jae Lee (Chonbuk Nat'l Univ., Korea), Min Su Kim (Johns Hopkins Univ., USA), Eo Jin Seo, and Seung Hee Lee (Chonbuk Nat'l Univ., Korea)

P3-112

Fabrication of Liquid Crystals Control Platform Based on Soft-imprinting MethodMin Jeong Shin, Min-Jun Gim, and Dong Ki Yoon (KAIST, Korea)


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-113

Advanced Technology to Improve Sandy Mura for G8.6 Large-Size TFT-LCDs

Min Li, Yu Yao, Jeff Chou, James Hsu, Wade Chen, and York Lu (Chongqing HKC Optoelectronics Tech. Co., Ltd., China)

P3-114

Dependence of Retardation Dispersion on UV Polarization during Polymerization of Single-Layer Negative Dispersion Retarder Film

Hojin Choi, Jinyoung Jeong, and Ji-Hoon Lee (Chonbuk Nat'l Univ., Korea)

P3-115

Multi-Directional Wrinkling Patterns of Liquid Crystalline Polymer for Electro-Optic Device Applications

Jaehyun Sim, Sihwa Oh, Sooyoung Yeom, Kitae Kim, and Jun-Hee Na (Chungnam Nat'l Univ., Korea)

P3-116

Polymerization-Induced Phase Separated Liquid Crystalline Haze FilmJae-Hyun Bae and Suk-Won Choi (Kyung Hee Univ., Korea)

P3-117

Circularly Polarized Luminescence from Self-Assembled Hierarchical Mesopahse Composed of Bent-Core and Rodlike MoleculesByeong-Cheon Kim and Suk-Won Choi (Kyung Hee Univ., Korea)

P3-118

Photomodulating Chiroptic Behaviors in Hierarchical Mesophase from Mixture System Consisting of Achiral Bent-Core and Rod-Like Mesogens

Hyeon-Joon Choi and Suk-Won Choi (Kyung Hee Univ., Korea)

P3-119

Dielectrohoresis in Nematic Medium Depending on the Cell Thickness

Bomi Lee and Jang-Kun Song (Sungkyunkwan Univ., Korea)


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-120

Dependence of Retardation Dispersion on UV-Polymerization Temperature in Host-Guest Reactive Mesogen Mixture

Jinyoung Jeong and Ji-Hoon Lee (Chonbuk Nat'l Univ., Korea)

P3-121

Intense Pulsed Light Annealed Metal Layer with Metal Nanoparticle for Organic Photovoltaics

Soo-Jung Yim, Dong-uk Kim, and Jae-Woong Yu (Kyung Hee Univ., Korea)

P3-122

No-Show

P3-123

Fabrication of All-Solution-Processed Inverted Organic Solar Cells

Dong Jae Lee, Da Hyun Kim, and Moon Hee Kang (Keimyung Univ., Korea)

P3-124

Microstructured Ion-Gel Film for Capacitive Pressure Sensors ArrayKang Lib Kim and Cheolmin Park (Yonsei Univ., Korea)

P3-125

Synthesis and Characterization of Nickel Hydroxide Nanostructures Prepared by Chemical Bath DepositionMoe Mikami, Yoshio Abe, Midori Kawamura, Takayuki Kiba, and Kyung Ho Kim (Kitami Inst. of Tech., Japan)

P3-126

Effects of Zn Precursors on Structural and Morphological Properties of Zn-Al Layered Double HydroxideSena Motoyama, Yoshio Abe, Midori Kawamura, Takayuki Kiba, and Kyung Ho Kim (Kitami Inst. of Tech., Japan)


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-127

Temperature Controlled Growth of Tin Sulfide Thin Films for Solar Cell Application

Pravin Pawar and Jaeyeong Heo (Chonnam Nat'l Univ., Korea)

P3-128

No-Show

P3-129

No-Show

P3-130

A Comparative Study of Various Poly(3,4-Ethylenedioxythiophene) Transparent Conductive Polymers Prepared on Flexible Substrates

Shotaro Tsuji, Yoshio Abe, Midori Kawamura, Takayuki Kiba, and Kyung Ho Kim (Kitami Inst. of Tech., Japan)

P3-131

No-Show

P3-132

Eliminating Toxic Process of N-Type Layer Fabrication in Amorphous Si Thin-Film Solar Cells by PFN Interfacial Layer Deposition

Min Seok Lee, Dae Keun Choi, Jun Hwan Cha, Hassan Hafeez, P. Justin Jesuraj, and Seung Yoon Ryu (Korea Univ., Korea)


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-133

High-Performance Soft Piezoelectric Nanogenerators via In-Situ Integration of P(VDF-TrFE) Thin Film and AgNW-Embedded Soft PlatformsHyeon Cho, Byeongmoon Lee, and Yongtaek Hong (Seoul Nat'l Univ., Korea)

P3-134

Control of Mouse Behavior via Flexible Light-Emitting Diodes on Motor CortexSeung Hyun Lee, Jung Ho Shin, Han Eol Lee, and Keon Jae Lee (KAIST, Korea)

P3-135

Hybrid Alignment of Dye-Doped Chiral-Nematic Liquid CrystalsSang-Hyeok Kim, Seung-Won Oh, and Tae-Hoon Yoon (Pusan Nat'l Univ., Korea)

P3-136

Dye Doped Siloxane Coating Film for Camera Module Infrared Cut-Off FilterSeung-Mo Kang, Yong Ho Kim, Young-Woo Lim, and Byeong-Soo Bae (KAIST, Korea)

P3-137

Human Attachable Photobiomodulation Using Conformable Organic Light-Emitting Band-Aid with Improved Wound Healing EffectYongmin Jeon (KAIST, Korea), Hye-Ryung Choi (Seoul Nat'l Univ., Korea), Jeong Hyun Kwon (KAIST, Korea), Kyoung-Chan Park (Seoul Nat'l Univ., Korea), and Kyung Cheol Choi (KAIST, Korea)

P3-138

Mirrored Image for Curved-Edge Seamless Display ApplicationSeunghwan Lee, Hyungsoo Yoon, Chanhyung Yoo, Boik Park, Dongyeon Kim, Eunho Oh, Byoungho Lee, and Yongtaek Hong (Seoul Nat'l Univ., Korea)

P3-139

Characterizing of Mechanical Properties for Flexible OLED ComponentsJunsu Park, Gisuk Kwon, Sooim Jung, Younggil Park, and Nari Ahn (Samsung Display Co., Ltd., Korea)


2B Hall (1F)

Poster Session III

Date: Aug. 31 (Fri.), 2018Time: 14:00~15:30

P3-140

Polarization Selective Etalon Color Filter Embedded with Plasmonic Nano GratingsYonghee Jung, Hyunseung Jung, and Hojin Lee (Soongsil Univ., Korea)

P3-141

Extremely Efficient Solution-Processed Simplified Small-Molecule Organic Lightemitting Diodes with Low Efficiency Roll-OffYoung-Hoon Kim, Tae-Hee Han, and Tae-Woo Lee (Seoul Nat'l Univ., Korea)

P3-142

In-Situ Fabrication of Polymer Light-Emitting Diodes on Surface-Modified Silicone Rubber for Applications in Soft Light-Emitting DevicesSujin Jeong, Hyungsoo Yoon, Byeongmoon Lee, Changhee Lee, and Yongtaek Hong (Seoul Nat'l Univ., Korea)

P3-143

A Compensation Circuit without Time Division Using Double-Gate- Structured Single-Walled Carbon Nanotube Thin Film TransistorsHyunjun Yoo, Jewook Ha, Hyeonggyu Kim, Jiseok Seo, and Yongtaek Hong (Seoul Nat'l Univ., Korea)

P3-144

Fabrication of Highly Reflective Thin-Film Mirrors on Surface-Modified Elastomer for Seamless Display ApplicationHyungsoo Yoon, Seunghwan Lee, and Yongtaek Hong (Seoul Nat'l Univ., Korea)

P3-145

Nickel-PDMS Based Soft Pressure Sensor with Suppressed Leakage CurrentJin kyun Park, Eunho Oh, Geonhee Kim, Byeongmoon Lee, and Yongtaek Hong (Seoul Nat'l Univ., Korea)


IMID 2018 Committees

Organizing Committee

General Chair Prof. Sung-Tae Shin (Korea Univ., Korea)

General Co-Chair Prof. Jun Souk (Korea Univ., Korea)

Executive Chair Prof. Hyun Jae Kim (Yonsei Univ., Korea)

Technical Program Chair Dr. Jeong-Ik Lee (ETRI, Korea)

Exhibition Chair Prof. Dae-Gyu Moon (Soonchunhyang Univ., Korea)

General Secretary Prof. Chang-Jae Yu (Hanyang Univ., Korea)

Technical Program SecretaryProf. Seung-Woo Lee (Kyung Hee Univ., Korea)

Prof. Yong-Young Noh (Dongkuk Univ., Korea)

Advisory Committee

Dr. Adi Abileah (Adi - Displays Consulting, USA)

Prof. Jong Sun Choi (Hongik Univ., Korea)

Prof. Ho-Kyoon Chung (Sungkyunkwan Univ., Korea)

Dr. Nak Woong Eum (ETRI, Korea)

Prof. Jin Jang (Kyung Hee Univ., Korea)

Prof. Yong-Seog Kim (Hongik Univ., Korea)

Prof. Hoi-Sing Kwok (HKUST, Hong Kong)

Prof. Oh-Kyong Kwon (Hanyang Univ., Korea)

Prof. John Kymissi (Columbia Univ. USA)

Prof. Sin-Doo Lee (Seoul Nat’l Univ., Korea)

Prof. Jong Duk Lee (Seoul Nat'l Univ., Korea)

Dr. Sri Peruvemba (Clearink Displays, Inc., USA)

Prof. Jun Souk (Korea Univ., Korea)

Mr. Ta Ahn Tu (Embassy of the S. R. of Vietnam in Korea, Vietnam)

Prof. Ki-Woong Whang (Seoul Nat’l Univ., Korea)

Dr. Xiaolin Yan (TCL Corporate Research, China)




Technical Program Committee

01. Special Session I : Quantum Dots

Chair Dr. Chul Jong Han (KETI, Korea)

Co-Chair Dr. Wedel Armin (Fraunhofer Inst. for Applied Polymer Research, Germany)

Secretary Prof. Wan Ki Bae (Sungkyunkwan Univ., Korea)Dr. Sohee Jeong (KIMM, Korea)Prof. Jiwan Kim (Kyunggi Univ., Korea)

Members Dr. Jake Joo (Dow Chem., Korea)Dr. Shinae Jun (Samsung Electronics Co., Ltd., Korea)Prof. Seong Jun Kang (Kyung Hee Univ., Korea)Prof. Moon Sung Kang (Soongsil Univ., Korea)Dr. Younghoon Kim (DGIST, Korea)Prof. Liang Li (Shanghai Jiao Tong Univ., China)Prof. Jaehoon Lim (Ajou Univ., Korea)Dr. Hunter McDaniel (UbiQD, USA)Dr. Jeffrey Pietryga (Los Alamos Nat'l Lab., USA)Prof. Heesun Yang (Hongik Univ., Korea)

02. Special Session II : Micro-LEDs

Chair Dr. Young-Woo Kim (KOPTI, Korea)

Co-Chairs Dr. Dong-Sun Lee (GIST, Korea)Prof. Keon-Jae Lee (KAIST, Korea)

Secretary Dr. Tak Jeong (KOPTI, Korea)

Members Dr. JeHyuk Choi (KANC, Korea)Dr. Brian Kim (RAON Tech, Korea)Dr. Jae-Hyun Kim (KIMM, Korea)Dr. Jin-Mo Kim (KOPTI, Korea)Dr. Jong-Su Kim (Photo Mechanic, Korea)Prof. Joon Seop Kwak (Sunchun Univ., Korea)Prof. Han-Youl Ryu (In-Ha Univ., Korea)Dr. Jae-Hyeong Ryu (KILT, Korea)

03. Special Session III : AR/VR/MR

Chair Dr. Wonhee Choe (Samsung Electronics Co., Ltd., Korea)

Co-Chair Prof. Jun Xia (SoutEast Univ., China)

Secretary Dr. Tae-yong Park (LG Display Co., Ltd., Korea)

Members Dr. Jongho Chong (Samsung Display Co., Ltd., Korea)Dr. James D. K. Kim (Samsung Electronics Co., Ltd., Korea)Dr. Brian Kim (RAON Tech, Korea)Dr. Hong-Seok Lee (Samsung Electronics Co., Ltd., Korea)Prof. Jae-Hyeung Park (Inha Univ., Korea)



04. Special Session IV: Stretchable / Deformable Materials andElectronics

Chair Prof. Jang-Ung Park (UNIST, Korea)

Co-Chair Prof. Pooi See Lee (Nanyang Technological Univ., Singapore)

Secretary Prof. Seong Jun Kang (Kyung Hee Univ., Korea)

Members Prof. Yu-Lun Chueh (Nat'l Tsing-Hua Univ., Taiwan)Dr. Sunho Jeong (KRICT, Korea)Dr. Hagen Klauk (Max Planck Inst., Germany)Dr. Jae Bon Koo (ETRI, Korea)Prof. Chi Hwan Lee (Purdue Univ., USA)Prof. Tsuyoshi Sekitani (Univ. of Tokyo, Japan)Dr. Barbara Stadlober (Joanneum Research Forschungsgesellschaft, Austria)Prof. Kuniharu Takei (Osaka Prefecture Univ., Japan)Dr. Ashutosh Tripathi (Holst Centre TNO, Netherlands)Prof. Cunjiang Yu (Univ. of Houston, USA)Prof. Ki Jun Yu (Yonsei Univ., Korea)Prof. Zijian Zheng (The Hong Kong Polytechnic Univ., China)

05. Transparent / Flexible Displays

Chair Dr. Joosun Yoon (Samsung Display Co., Ltd., Korea)

Co-Chairs Dr. Martin Rosenblum (Vitriflex, USA)Dr. Woojae Lee (ENF Tech. Co., Ltd., Korea)

Secretary Prof. Han-Ki Kim (Kyung Hee Univ., Korea)Prof. Jang-Yeon Kwon (Yonsei Univ., Korea)

Members Dr. Janglin Chen (ITRI, Taiwan)Prof. MunPyo Hong (Korea Univ., Korea)Prof. Toshihide Kamata (AIST, Japan)Dr. Taewoong Kim (Samsung Display Co., Ltd., Korea)Dr. Young Seok Kim (Dow Co., Ltd., Korea)Prof. Sang-Hee Ko Park (KAIST, Korea)Dr. Jae Bon Koo (ETRI, Korea)Prof. Soon-Bum Kwon (Hoseo Univ., Korea)Dr. Won Seo Park (LG Display Co., Ltd., Korea)

06. Emerging Display Materials

Chair Prof. Sung-Yool Choi (KAIST, Korea)

Co-Chair Prof. Maksym Kovalenko (ETH, Switzerland)

Secretary Prof. Soo Young Kim (Chung-Ang Univ., Korea)

Members Prof. Dae Sung Chung (DGIST, Korea)Dr. Masataka Hasegawa (AIST, Japan)Prof. Ho Won Jang (Seoul Nat'l Univ., Korea)Prof. Changgu Lee (Sungkyunkwan Univ., Korea)Prof. Gwan-Hyoung Lee (Yonsei Univ., Korea)Prof. Hao-Wu Lin (Nat'l Tsinghua Univ., Taiwan)Prof. Kian-Ping Loh (Nat'l Univ. of Singapore, Singapore)Dr. Jaehyun Moon (ETRI, Korea)Dr. Jong Hyun Park (LG Display Co., Ltd., Korea)Prof. Myoung Hoon Song (UNIST, Korea)Prof. Dmitri V. Talapin (The Univ. of Chicago, USA)Prof. Hin-Lap(Angus) Yip (South China Univ. of Tech., China)



07. Active-Matrix Device

Chair Prof. Yong-Hoon Kim (Sungkyunkwan Univ., Korea)

Co-Chair Prof. Thomas Anthopoulos (KAUST, Kingdom of Saudi Arabia)

Secretary Prof. Myung-Gil Kim (Chung-Ang Univ., Korea)Dr. Min-Suk Oh (KETI, Korea)

Members Dr. Mario Caironi (IIT, Italy)Dr. Gerwin Gelinck (Holst Center, TNO, Netherland)Prof. Xugang Guo (South Univ. of Sci. and Tech., China)Prof. Jiyoul Lee (Pukyong Nat'l Univ., Korea)Prof. Kimoon Lee (Kunsan Univ., Korea)Prof. Mi-Jung Lee (Kookmin Univ., Korea)Prof. Hanying Li (Zhejiang Univ., China)Dr. Takeo Minari (NIMS, Japan)Dr. Shelby Nelson (Eastman kodak, USA)Prof. Takashi Noguchi (Univ. of the Ryukyus, Japan)Prof. Soong-Ju Oh (Korea Univ., Korea)Prof. Sungkyu Park (Chung-Ang Univ., Korea)Prof. Takafumi Uemura (Osaka Univ., Japan)Dr. Janos Veres (PARC, USA)Prof. Haibo Zeng (Nanjing Univ., China)

08. Applied Vision / Human Factors

Chair Dr. Jang Jin Yoo (LG Display Co., Ltd., Korea)

Co-Chairs Dr. Thierry Leroux (ELDIM, France)Prof. Youngshin Kwak (UNIST, Korea)

Secretary Prof. Yung Kyung Park (Ewha Womans Univ., Korea)

Members Mr. Jongho Chong (Samsung Display Co., Ltd., Korea)Prof. Hyungki Hong (Seoul Nat'l Univ. of S&T, Korea)Dr. Kyung-Jin Kang (LG Electronics Co., Ltd., Korea)Prof. Choon-Woo Kim (Inha Univ., Korea)Dr. Kenichiro Masaoka (NHK, Japan)Dr. Byungseok Min (Samsung Electronics Co., Ltd., Korea)Dr. John Penczek (NIST, USA)Prof. Pei-Li Sun (NTUST, Taiwan)

09. Display Electronics and Systems

Chair Prof. Hojin Lee (Soongsil Univ., Korea)

Co-Chair Prof.Reiji Hattori (Kyushu Univ., Japan)

Secretary Prof. Suk-Ju Kang (Sogang Univ., Korea)

Members Dr. Hideki Asada (NLT Tech., Ltd., Japan)Prof. Byong-Deok Choi (Hanyang Univ., Korea)Dr. Yong Ho Jang (LG Display Co., Ltd., Korea)Prof. Seung-Woo Lee (Kyung Hee Univ., Korea)Prof. Yiming Li (Nat'l Chiao Tung Univ., Taiwan)Prof. Hyoungsik Nam (Kyung Hee Univ., Korea)Dr. Haruhiko Okumura (Toshiba Corp., Japan)Dr. Hyun-Sang Park (Samsung Electronics Co., Ltd., Korea)Prof. KeeChan Park (Konkuk Univ., Korea)Mr. Bonghyun You (Samsung Display Co., Ltd., Korea)Prof. Jaehee You (Hongik Univ., Korea)



10. Display Manufacturing and Equipments

Chair Prof. Dae-Gyu Moon (Soonchunhyang Univ., Korea)

Co-Chair Dr. Gerwin Gelinck (Holst Centre TNO, Netherlands)

Secretary Dr. Sunghaeng Cho (ETRI, Korea)

Members Prof. Heeyeop Chae (Sungkyunkwan Univ., Korea)Prof. Changhun Hwang (Dankook Univ., Korea)Dr. Kyung-Tae Kang (KITECH, Korea)Prof. Kye-Si Kwon (Soonchunhyang Univ., Korea)Dr. Sin Kwon (KIMM, Korea)Dr. Hyeon-Jun Lee (DGIST, Korea)Dr. Jeongno Lee (KETI, Korea)Prof. Jongwoon Park (Korea Univ. of Tech. & Education, Korea)Prof. Seungjun Yi (Korea Univ., Korea)Dr. Dong Kil Yim (AKT, USA)

11. Display Optics - 3D Displays

Chair Dr. Jisoo Hong (KETI, Korea)

Co-Chair Prof. Hirotsugu Yamamoto (Utsunomiya Univ., Japan)

Secretary Dr. Soon-Gi Park (LetinAR, Korea)

Co-Secretary Dr. Keehoon Hong (ETRI, Korea)

Members Prof. Myungjin Cho (Hankyong Nat'l Univ., Korea)Prof. Hee-Jin Choi (Sejong Univ., Korea)Dr. Kyuhwan Choi (Samsung Electronics Co., Ltd., Korea)Dr. Sujung Huh (Samsung Display Co., Ltd., Korea)Prof. Joonku Hahn (Kyungpook Nat'l Univ., Korea)Dr. Hoon Kang (LG Display Co., Ltd., Korea)Dr. Hoonjong Kang (KETI, Korea)Prof. Hwi Kim (Korea Univ., Korea)Prof. Nam Kim (Chungbuk Univ., Korea)Dr. Seung-Cheol Kim (KT, Korea)Dr. Youngmin Kim (KETI, Korea)Dr. Hong-Seok Lee (Samsung Electronics Co., Ltd., Korea)Dr. Kwang-Hoon Lee (KOPTI, Korea)Dr. Yongjun Lim (ETRI, Korea)Prof. Sung-Wook Min (Kyung Hee Univ., Korea)Prof. Jae-Hyeung Park (Inha Univ., Korea)Prof. YeongHo Seo (Kwangwoon Univ., Korea)Dr. Byoungsub Song (KIST, Korea)Dr. Jiwoon Yeom (KETI, Korea)



12. LC Technologies

Chair Prof. Suk-Won Choi (Kyung Hee Univ., Korea)

Co-Chair Dr. Fumito Araoka (RIKEN, Japan)

Secretary Prof. Hak-Rin Kim (Kyungpook Nat'l Univ., Korea)Prof. Jangkun Song (Sungkyunkwan Univ., Korea)

Members Dr. Hyunseok Choi (Samsung Electronics Co., Ltd., Korea)Prof. Yoonseuk Choi (Hanbat Nat'l Univ., Korea)Prof. Jin Seog Gwag (Yeungnam Univ., Korea)Prof. Takahiro Ishinabe (Tohoku Univ., Japan)Prof. Shin-Woong Kang (Chonbuk Nat'l Univ., Korea)Prof. Jong Hyun Kim (Chungnam Nat'l Univ., Korea)Prof. Seung Hee Lee (Chonbuk Nat'l Univ., Korea)Prof. Tsung-Hsien Lin (Nat'l Sun Yat Sen Univ., Taiwan)Dr. Koichi Miyachi (JSR Corp., Japan)Dr. Kichul Shin (Samsung Display Co., Ltd., Korea)Prof. Dong Ki Yoon (KAIST, Korea)

13. Lighting Materials and Applications

Chair Prof. Jae-Hyeon Ko (Hallym Univ., Korea)

Co-Chair Prof. Ray-Hua Horng (Nat'l Chung Hsing Univ., Taiwan)

Secretary Dr. Seongsoo Jang (LG Display Co., Ltd., Korea)

Members Dr. Tony Bergen (Photometric Solutioins InterNat'l Pty Ltd., Australia)Dr. Meeryoung Cho (KOPTI, Korea)Prof. Yong-Hoon Cho (KAIST, Korea)Prof. Ja-Soon Jang (Yeungnam Univ., Korea)Prof. Byung-Yun Joo (Korea Univ. of Tech. & Education, Korea)Dr. Tae-Gyu Kang (ETRI, Korea)Prof. Jong Kyu Kim (POSTECH, Korea)Dr. Jun-Youn Kim (Samsung Electronics Co., Ltd., Korea)Dr. Young Wook Ko (CPRI, Korea)Prof. In-Hwan Lee (Korea Univ., Korea)Dr. Jae-Hyoung Ryu (KILT, Korea)

14. OLED Frontplanes

Chair Dr. Chang Wook Han (LG Display Co., Ltd., Korea)

Co-Chair Dr. Andreas Haldi (Cynora GmbH, Germany)

Secretary Dr. Nam Sung Cho (ETRI, Korea)

Members Dr. Remi Anemian (Merck, Germany)Dr. Hong Seok Choi (LG Display Co., Ltd., Korea)Dr. Toshiaki Ikuta (JNC Petrochemical Co., Japan)Prof. Chil Won Lee (Dankook Univ., Korea)Prof. Chun-Sing Lee (City Univ. of Hong Kong, China)Prof. Björn Lüssem (Kent State Univ., USA)Prof. Sebastian Reineke (TU Dresden, Germany)Prof. Min Chul Suh (Kyung Hee Univ., Korea)Prof. Zhao-Kui Wang (Soochow Univ., China)Dr. Seunggak Yang (Samsung Displays Co., Ltd., Korea)Prof. Seunghyup Yoo (KAIST, Korea)



15. Energy Devices

Chair Dr. Won Suk Shin (KRICT, Korea)

Co-Chairs Prof. Christine K. Luscombe (Univ. of Washington, USA)Prof. Riede Moritz (Univ. of Oxford, UK)

Secretary Prof. BongSoo Kim (Ewha Womans Univ., Korea)

Members Dr. Sohee Jeong (KIMM, Korea)Prof. Jae Hong Kim (Yeungnam Univ., Korea)Dr. Younghoon Kim (DGIST, Korea)Prof. Hyunjung Lee (Kookmin. Univ., Korea)Prof. Jae-Joon Lee (Dongguk Univ., Korea)Prof. Jung-Yong Lee (KAIST, Korea)Dr. Dong Chan Lim (KIMS, Korea)Dr. Jangwon Seo (KRICT, Korea)

16. Touch and Interactive Displays

Chair Prof. Do Hwan Kim (Hanyang Univ., Korea)

Co-Chair Prof. Ho-Hsiu Chou (National Tsing Hua Univ., Taiwan)

Secretary Prof. Steve Park (KAIST, Korea)Prof. Jeong-Yun Sun (Seoul Nat'l Univ., Korea)

Members Prof. Jong-Hyun Ahn (Yonsei Univ., Korea)Prof. Unyong Jeong (POSTECH, Korea)Dr. Min-Seok Kim (KRISS, Korea)Prof. Hyunhyub Ko (UNIST, Korea)Prof. Sung Won Lee (DGIST, Korea)Prof. Joon Hak Oh (POSTECH, Korea)Prof. Changhyun Pang (Sungkyunkwan Univ., Korea)

17. Emerging Display Applications

Chair Prof. Yongtaek Hong (Seoul Nat'l Univ., Korea)

Co-Chair Dr. Jeongno Lee (KETI, Korea)

Secretary Dr. Cheolam Kim (ETRI, Korea)

Members Dr. Seongdeog Ahn (ETRI, Korea)Dr. Seungjun Chung (KIST, Korea)Prof. Jaewook Jeong (Chungbuk Nat'l Univ., Korea)Mr. Jeonghyun Kim (LG Display Co., Ltd., Korea)Prof. Jooyong Kim (Soongsil Univ., Korea)Prof. Sungkyu Park (Chung-Ang Univ., Korea)Prof. Bo-Ru (Paul) Yang (Sun Yat-Sen Univ., China)



Exhibition Committee

Chair Prof. Dae-Gyu Moon (Soonchunhyang Univ., Korea)

Co-Chair Dr. Won Houng Seo (KDIA, Korea)

Members Dr. Nam Sung Cho (ETRI, Korea) Prof. Hee Hwan Choe (Korea Aerospace Univ., Korea)Prof. Sung Hoo Ju (Daejin Univ., Korea)Dr. Kyung-Tae Kang (KITECH, Korea)Dr. Young-Woo Kim (KOPTI, Korea)Dr. Dong Sik Kim (KDIA, Korea)Dr. Young Wook Koh (CPRI, Korea) Dr. Jeong-No Lee (KETI, Korea)Prof. Bum Joo Lee (Chonbuk Nat'l Univ., Korea)Prof. Jin-Seong Park (Hanyang Univ., Korea)Dr. Chang Taek Seo (GERI, Korea)Prof. Dong Chan Shin (Chosun Univ,. Korea)Dr. Jae Ik Woo (NPAC, Korea)


IMID 2018 Invited Papers

A1-1 Experimental and Kinetic Monte Carlo Simulation Studies of Excitonic Processes in Phosphorescent and TADF-Type OLEDsR. Coehoorn, A. Ligthart, X. de Vries, P.A. Bobbert, S. Gottardi, S.L.M. van Mensfoort, and H. van Eersel (Eindhoven Univ. of Tech., The Netherlands)

A1-2 Effects of Interface Structures on Thermal Stability of OLED FilmsDaisuke Yokoyama, Ukyo Shiomoto, and Yoshiya Sakai (Yamagata Univ., Japan)

B2-1 Efficient Quantum Dot Light-Emitting Diodes with Tandem StructureHeng Zhang, Qiang Su, and Shuming Chen (Southern Univ. of Science and Tech., China)

B2-2 Ideal Nanocrystal Quantum Dots for Active-Matrix Light- Emitting DiodesZhaohan Li, Ruili Wu, Huaibin Shen, and Lin Song Li (Henan Univ., China)

C3-1 Large Deformation in Soft Material Enables New Photonic and Phononic PropertiesJianfeng Zang (Huazhong Univ. of Science and Tech., China)

C3-2 Smart Healthcare Sensing System Powered by Human MotionsYun-Ting Jao, Po-Kang Yang, Che-Min Chiu, Yu-Jhen Lin, Shuo-Wen Chen, and Zong-Hong Lin (Nat'l Tsing Hua Univ., Taiwan)

C3-3 Ultraflexible Organic Differential Amplifier for Biosignal Monitoring SystemsTakafumi Uemura and Tsuyoshi Sekitani (Osaka Univ., Japan)

D4-1 Atomic Engineering of Wafer-Scale 2D SemiconductorsKibum Kang (KAIST, Korea)

E5-1 Advanced OLED Microdisplays for Virtual- and Augmented- Reality Applications Uwe Vogel, Philipp Wartenberg, Bernd Richter, Stephan Brenner, Karsten Fehse, and Matthias Schober (Fraunhofer FEP, Germany)

E5-2 OLED Micro-Displays for Virtual Reality (VR) & Augmented Reality (AR)Amalkumar Ghosh, Ilyas Khayrullin, Qi Wang, Evan Donoghue, Tariq Ali, Ihor Wacyk, Kerry Tice, Fridrich Vazan, Olivier Prache, and Laurie Sziklas (eMagin Corp., USA)




F6-1 Impact of Plasma Electron on Plasma Damage-Free Sputtering of Tin-Doped Indium Oxide Contact Layer on p-GaN for InGaN/GaN LEDs Joon Seop Kwak (Sunchon Nat'l Univ., Korea)

F6-2 GaN Monolithic Integration for Lighting and DisplaysHoi Wai Choi (The Univ. of Hong Kong, Hong Kong)

F6-3 Novel Epitaxial Growth Methods for Nitride Materials by Using Plasma TechnologyO. Oda, F. W. Amalraj, N. Shimizu H. Kondo, M. Sekine, Y. Tsutumi (Nagoya Univ., Japan), K. Ishikawa, H. Kano, N. Ikarashi (NURei Co., Ltd., Japan), H. Amano, and M. Hori (Nagoya Univ., Japan)

G7-1 Solution-Processed Organic Crystals for Transistor ApplicationsYun Li (Nanjing Univ., China)

G7-2 Organic Anti-Ambipolar Field-Effect Transistor for Flexible Logic CircuitsYutaka Wakayama (NIMS, Japan)

H8-1 Stretchable Conductors for Human-Machine InterfacePooi See Lee (Nanyang Technological Univ., Singapore)

H8-2 Deformable Single Crystalline Metal Oxide Nanowires and Their Deformable Device ApplicationsTakeshi Yanagida (Kyushu Univ., Japan)

A9-1 High Dynamic Range Performance of OLED TVsJang Jin Yoo, Sungjin Kim, Yongmin Park, Dongwoo Kang, Jongjin Park, Jonguk Bae, and Sooyoung Yoon (LG Display Co., Ltd., Korea)

A9-2 Optical Design for High Efficiency and Wide-Color-Gamut in OLEDs with Multi-Cathode StructureAkiyoshi Mikami (Kanazawa Inst. of Tech., Japan)

A9-3 Recent Developments on Purely Organic White OLEDsShi-Jian Su (South China Univ. of Tech., China)

A9-4 New OLED Device for Automotive DisplayKwan-soo Kim, Kimin Lim, Byungsoo Kim, Eunjung Park, Hyun-chul Choi, and InByeong Kang (LG Display Co., Ltd., Korea)

B10-1 Light Emitting Devices Made of Graphene Quantum Dot with Controlled OxidationSeokwoo Jeon (KAIST, Korea)

B10-2 Highly Transparent Optoelectronics Based on Quantum-Dots and Oxide SemiconductorsSeong Jun Kang (Kyung Hee Univ., Korea)



B10-3 New Technologies for Colouring in DisplaysArmin Wedel, Yohan Kim, Benjamin Heyne, and André Geßner (Fraunhofer Inst. for Applied Polymer Research, Germany)

C11-1 Morphological Control of Touch Surfaces Based on Soft Elastomer ActuatorsIl-Kwon Oh (KAIST, Korea)

C11-2 User-Interactive and Color-Tunable Electronic SkinHo-Hsiu Chou (Nat'l Tsing Hua Univ., Taiwan), Amanda Nguyen, Alex Chortos, John W.F. To, Chien Lu, Jianguo Mei, Tadanori Kurosawa, Won-Gyu Bae, Jeffrey B.-H. To, and Zhenan Bao (Standford Univ., USA)

D12-1 Halide Perovskite Dot Emitters for Display ApplicationsYoung-Hoon Kim and Tae-Woo Lee (Seoul Nat'l Univ., Korea)

D12-2 Blue Emitting Square Planar Metal Complexes for Displays and Lighting ApplicationsJian Li, Samuel Shin, Kody Klimes, and Zhiqiang Zhu (Arizona State Univ., USA)

D12-4 Novel Perovskite Nano-Particles for Display ApplicationsShu-Wen Dai, Bo-Wei Hsu, Tsu-Yu Chou, and Hao-Wu Lin (Nat'l Tsing Hua Univ., Taiwan)

E13-1 Can Holographic Technology Realize Ideal HMD?Yuji Sakamoto, Hibiki Kubo, Yuki Oguro, and Fumio Okuyama (Hokkaido Univ., Japan)

E13-2 Optical See-Through Near-to-Eye Display with Depth of Focus ControlJae-Hyeung Park and Seong-Bok Kim (Inha Univ., Korea)

E13-3 Full-Color Holographic Near-Eye Display with Natural Depth CuesSeyedmahdi Kazempourradi, M. Kıvanç Hedili, Burak Soner, Ali Cem, Erdem Ulusoy, and Hakan Ürey (Koç Univ., Turkey)

F14-1 Barrier Less Quantum Dot Film for Display and Lighting ApplicationsYoung Wook Ko, Yongduk Kim, Yong-Hwan Yoo, Taehee Park, Jung-Chul Shin, Myung-Keun Hwang (CPRI, Korea), Wanggun Yu, and Woosik Lee (GLVISION Co., Ltd., Korea)

F14-2 Colloidal Quantum Dot Optoelectric ApplicationsKyung-Sang Cho and Chan-Wook Baik (Samsung Advanced Inst. of Tech., Korea)

G15-1 Poly-Si TFT Technology from Viewpoints of Low-Temperature Crystallization and High-Performance DeviceNaoto Matsuo (Univ. of Hyogo, Japan)



G15-2 Low Temperature Growth of Group-IV Semiconductors on Insulator for Advanced Flexible ElectronicsTaizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan), and Isao Tsunoda (Kumamoto College, Japan)

H16-1 Textile-Based Wearable Electrochemical Energy Storage Devices Zijian Zheng (The Hong Kong Polytechnic Univ., Hong Kong, China)

H16-2 Fully Formed Reverse Fabrication Techniques for Flexible Bio-Integrated ElectronicsKi Jun Yu (Yonsei Univ., Korea)

H16-3 Multi-Functional Flexible Sensor Sheets for Wearable and IoT ApplicationsKuniharu Takei (Osaka Prefecture Univ., Japan)

A17-1 Phosphorescent OLEDs: Materials and TechnologyMichael S Weaver, Nicholas J. Thompson, Vadim I. Adamovich, and Julie J. Brown (Universal Display Corp., USA)

A17-2 Exciton-Mediated Formation of Polaron Pairs Shortens Lifetime of Blue- Electrophosphorescence DevicesYoungmin You (Ewha Womans Univ., Korea)

A17-3 Exciplex: Its Nature and Applications to OLEDsChang-Ki Moon, Hwang-Bum Kim, Kwon-Hyun Kim, Hyun Shin, Hyun-Gu Kim, and Jang-Joo Kim (Seoul Nat'l Univ., Korea)

B18-1 Photoluminescent Perovskites and Electroluminescent Quantum DotsHao Chen, Juan He, Caicai Zhang, Yanan Wang, Shin-Tson Wu, and Yajie Dong (Univ. of Central Florida, USA)

B18-2 Bright and Efficient Light-Emitting Diodes Based on Perovskite Quantum DotsKai Wang and Xiao Wei Sun (Southern Univ. of Science and Tech., China)

C19-1 Design and Metrology for HDR/WCG DisplaysKenichiro Masaoka (NHK, Japan)

C19-2 Scene Dependent AR Image Rendering of Optical See-through HMDsPei-Li Sun and Yu-Ting Hsiao (Nat'l Taiwan Univ., Taiwan)

C19-3 Central, Peripheral and Binocular VisionHyung Ki Hong (SEOULTECH, Korea)

D20-1 MicroLED Displays: Hype and Reality, Hopes and ChallengesEric Virey and Pars Mukish (Yole Développement, France)



D20-2 Nitride MicroLEDs and DisplaysHongxing Jiang and Jingyu Lin (Texas Tech Univ., USA)

D20-3 Printing MicroLEDs and MicroICs for Next Generation DisplaysChristoper Bower (X-Celeprint Inc., Ireland)

F22-1 Improved Charge Collections and Photovoltaic Performances in Infrared Colloidal Quantum Dot Solar CellsYounghoon Kim (DGIST, Korea), Jongmin Cho, Jea-Woong Jo, and Edward H. Sargent (Univ. of Toronto, Canada)

F22-2 Interface Engineering for High Performing Bulk-Heterojunction Solar CellsShinuk Cho (Univ. of Ulsan, Korea)

F22-3 Conjugate Polymer Thin Films for Self-Powered Electrochromic DisplayEunkyoung Kim (Yonsei Univ., Korea)

G23-1 Hydrogen Anion and Subgap States in Amorphous In–Ga–Zn–O Thin FilmsJoon Ho Bang, Satoru Matsuishi, Jung Hwan Kim, and Hideo Hosono (Tokyo Inst. of Tech., Japan)

G23-2 Oxide Thin Film Transistor with Spin-on-Glass Gate InsulatorS. H. Hwang, Y. J. Baek, Y. L. Han, S. M. Lee, J. M. Lee, E. -J. Yun, and B. S. Bae (Hoseo Univ., Korea)

H24-1 Real Reality Interfaces with Interactive Light Field DisplaysRoel Vertegaal (Queen's Univ., Canada)

H24-2 Wireless Sensors and Digital HealthcareJeonghyun Kim (Kwangwoon Univ., Korea)

A25-1 Development of Organic Semiconducting MaterialsYun-Hi Kim (Gyeongsang Nat'l Univ., Korea)

A25-2 Long-Lived Highly Efficient Electron-Transporting Material for OLEDMengying Bian, Fan Lv, Jiannan Gu, and Lixin Xiao (Peking Univ., China)

A25-3 Efficiency Engineering of Blue and Green OLEDs

Joachim Kaiser, Edgar Böhm, Tobias Großmann, Holger Heil, Dominik Joosten, Jun-Ho Kim, Rouven Linge, Aurelie Ludemann, Falk May, Christof Pflumm, Lara-Isabel Rodriguez, Philipp Stößel, and Frank Voges (Merck KGaA, Germany)

B26-1 Modification of Solution-Phase Ligand Exchange Methods for

Infrared Colloidal Quantum Dot Photovoltaics

Jea Woong Jo (Dongguk Univ., Korea)



B26-2 Competitive Materials: Narrow Band Red Emitting LED Phosphors for Wide Color Gamut Displays James Murphy (GE Global Research, USA), William Beers (GE Lighting, USA), Matthew Butts, Sam J. Camardello (GE Global Research, USA), Ashfaqul Chowdhury, William Cohen, Fangming Du (GE Lighting, USA), Jerry Liu (GE Global Research, USA), Clark Nelson (GE Lighting, USA), Gautam Parthasarathy, Robert Perry, and Anant A. Setlur (GE Global Research, USA)

C27-1 Display Quality Control Using New Real-Time Spectral Viewing Angle Measurement SystemThierry Leroux and Pierre Boher (ELDIM, France)

C27-2 Display Metrology Methodology of the Early 21st CenturyJoe Miseli (JVM Research, USA)

C27-3 Color Gamut Volume Metric with Overlap and Viewing Direction under 8 Point MeasurementKyung Jin Kang (LG Electronics Inc., Korea)

D28-1 Flexible MicroLED for Displays and Biomedical ApplicationsKeon Jae Lee (KAIST, Korea)

D28-2 Micro-LEDs for Marco-DisplaysZhaojun Liu, Ke Zhang (Southern Univ. of Science and Tech., China), Chengfeng Qiu, Kei May Lau, Hoi Sing Kwok (HKUST, Hong Kong), and Xiaowei Sun (Southern Univ. of Science and Tech., China)

D28-3 Micro-LED Integrated Bioelectronics: Enabling Tools to Engage Biological Systems Using LightJae-Woong Jeong (KAIST, Korea)

F30-1 Physical Decoupling of Charge Transport and Injection in Organic TransistorsChang-Hyun Kim (Gachon Univ., Korea) and J. Emyr Macdonald (Cardiff Univ., UK)

F30-2 Stretchable Ionics – A Promising Candidate for Oncoming Wearable DevicesJeong-Yun Sun (Seoul Nat'l Univ., Korea)

F30-3 Perovskite Thin Film TransistorsFarjana Haque, Nhu Hoang, Jin Jang, and Mallory Mativenga (Kyung Hee Univ., Korea)

F30-4 High Performance Thin-Film Transistors Based on Advanced Materials for Next-Generation Displays Prof. Tae-Jun Ha (Kwangwoon Univ., Korea)

G31-1 Imide-Functionalized Organic Semiconductors for High- Performance N-Type Thin-Film TransistorsXugang Guo (Southern Univ. of Science and Tech., China)



G31-2 OFET: Enhanced Performance for Flexible Displays Jochen Brill (BASF SE, Germany)

G31-3 Correlation of Molecule Structures and Charge Transport Properties in N-Channel Organic Field-Effect TransistorsYuanyuan Hu (Hunan Univ., China)

H32-1 Innovation of Real 3D Display and Augmented Reality in Biomedical EngineeringHongen Liao (Tsinghua Univ., China)

H32-2 Hidden Stereo: Hiding Phase-Based Stereo Disparity for Ghost-Free Viewing without GlassesTaiki Fukiage, Takahiro Kawabe, and Shin’ya Nishida (NTT Communication Science Lab., Japan)

A33-1 Importance of Low Refractive Index Media for Ultimate Efficiency in OLEDsSeunghyup Yoo, Jaeho Lee, and Jinouk Song (KAIST, Korea)

A33-2 Emitter Orientation vs. Host Birefringence for OLED OptimizationNorbert Danz (Fraunhofer IOF, Germany), Nils Haase, Antonia Morherr, Christof Pflumm (Merck KGaA, Germany), and Dirk Michaelis (Fraunhofer IOF, Germany)

B34-1 Recent Advances in Highly Flexible and Transparent OLED Devices for Signage ApplicationsPavel Kudlacek, Raghu Pendyala, Pradeep Panditha, Ahmed Salem, Suzanne de Winter, Peter van de Weijer, Piet C. P. Bouten, Hylke Akkerman, and Paul Poodt (Holst Centre TNO, Netherlands)

B34-2 Ink Jet Application in Thin Film Encapsulation of Flexible DisplaysLorenza Moro, Chris Hauf, June Zhang, and Jeff Hebb (Kateeva, Inc., USA)

B34-3 Opportunities and Challenges of Flexible AMOLED IndustryJianping Chen, Guizhou Qiao, Weiguo Li, and Shengzu Zhu (Visionox, China)

C35-1 Atomized Scan Strategy for High Frame Rate and Definition OLED MicrodisplayWendong Chen, Shuping Huang, and Yuan Ji (Shanghai Univ., Korea)

C35-3 HVS Model-Based Tone Mapping Technique for Displaying HDR10 ContentsNam Hoang Nguyen, Tu Van Vo, and Chul Lee (Pukyung Nat'l Univ., Korea)

D36-1 Optically Addressed Liquid Crystal Spatial Light ModulatorPeng Chen, Bing-Yan Wei, and Wei Hu (Nanjing Univ., China)



D36-2 Transparent Holographic Optical Element with Visible Playback Using Cholesteric Liquid CrystalsHiroyuki Yoshida, SeongYong Cho, Masaru Ono, and Masanori Ozaki (Osaka Univ., Japan)

D36-3 Ultra-Large Field-of-View Retinal Projection Display with Corrective LensWenbo Zhang, Chao Ping Chen, Lantian Mi, Yifan Lu, Weiqian Guo, Yang Li, Bing Yu, and Nizamuddin Maitlo (Shanghai Jiao Tong Univ., China)

G39-1 Inkjet Printing Technique of Single Crystalline Organic Semiconductor Films for High-Performance TFTsHiromi Minemawari, Mutsuo Tanaka, Seiji Tsuzuki, Satoru Inoue, Toshikazu Yamada (AIST, Japan), Reiji Kumai (CMRC, Japan), Yukihiro Shimoi, and Tatsuo Hasegawa (AIST, Japan)

G39-2 Ultratransparent and Stretchable Graphene ElectrodesNan Liu (Beijing Normal Univ., China)

G39-3 Thin-Film Transistors Based on Organic-2D HeterostructuresTae Hoon Lee (Kwangwoon Univ., Korea)

H40-1 Tabletop 3D Displays with Mixture of Virtuality and Reality Based on Integral ImagingHan-Le Zhang, Huan Deng, Min-Yang He, and Qiong-Hua Wang (Sichuan Univ., China)

H40-2 Integral Three-Dimensional Display Using Multiple Display UnitsHisayuki Sasaki, Naoto Okaichi, Hayato Watanabe, Masahiro Kawakita, and Tomoyuki Mishina (NHK, Japan)

A41-2 Highly Efficient Deep Blue TADF Emitter Materials for

Next-Generation OLED Displays

Thomas Baumann and Geoergios Liaptsis (Cynora GmbH, Germany)

A41-3 Theoretical Insights into the Rational Design of Thermally Activated Delayed Fluorescence MaterialsDongwook Kim (Kyonggi Univ., Korea)

B42-2 Material Research Strategy for Flexible and Stretchable Liquid Crystal DisplaysHideo Fujikake, Seiya Kawamorita, Daisuke Minami, Ryosuke Saito, Yosei Shibata, and Takahiro Ishinabe (Tohoku Univ., Japan)

C43-1 Driving AMOLED Displays with Lower Power and Improved Luminescence UniformityXinghua Xu, Jiali Fan, and Xiaojun Guo (Shanghai Jiao Tong Univ., China)



C43-3 Image Processing for Enhancing Display PerformanceChihao Xu, Maxim Schmidt, Michael Grüning, and Xingtong Jiang (Saarland Univ., Germany)

D44-1 Second Harmonic Microscopy for Liquid CrystalsFumito Araoka (CEMS, Japan) and Koichiro Shirota (RAP, Japan)

D44-2 Hierarchical Nanostructures from Functional Reactive MesogensKwang-Un Jeong (Chonbuk Nat'l Univ., Korea)

D44-3 Liquid Crystals: A Functional Building Block for Programmable Adaptive MaterialsSuk-Kyun Ahn (Pusan Nat'l Univ., Korea)

E45-1 Proprietary Process Technologies for Large Area OLED Manufacturing Jae Hoon JUNG, Soeren Hartmann, Markus Schwambera, Boerge Wessling, and Markus Gersdorff (APEVA SE, Germany)

E45-2 FMM Materials and Manufacturing Process Chiwoo Kim, Kisoo Kim, Jong Kab Park, Doh Hoon Kim, and Kiro Jung (APS Holdings Corp., Korea)

F46-1 Ultra-Fine Pitch Thin-Film Micro LED Display Simulation Shu-Mei Yang, Po-Hsun Wang, Chia-Hsin Chao, Yen-Hsiang Fang, and Chien-Chung Lin (ITRI, Taiwan)

F46-2 Feasibility of Low Cost Micro LEDs Prepared by Pulsed SputteringHiroshi Fujioka, Kohei Ueno, and Atsushi Kobayashi (The Univ. of Tokyo, Japan)

F46-3 Design of Spectral Power Distribution with Phosphor Converted LEDs for Human Centric LightingNoh-Joon Park (CPRI, Korea), Jeong-Vin Bae (ALLIX Co., Ltd., Korea), Mi-Ri Park, Won Seok Choi, and Myung-Keun Hwang (CPRI, Korea)

G47-1 Chargeable Semiconductors for Non-Volatile Transistor-Type MemoryWen-Ya Lee (Nat'l Taipei Univ. of Tech., Taiwan)

G47-2 CVD Monolayer MoS2 and Exfoliated WSe2 Field Effect Transistors toward Active Matrix Pixel with Organic Light Emitting DiodesHyeokjae Kwon, Sanghyuck Yu (Yonsei Univ., Korea), Sourav Garg, Seongsin Kim, Patrick Kung (Univ. of Alabama, USA), and Seongil Im (Yonsei Univ., Korea)

G47-3 Low Dimensional Semiconductor Materials for Various Electronic and Optoelectronic ApplicationsDo Kyung Hwang (KIST, Korea)



H48-1 Volumetric Displays Using Holographic Multi-Photon ExcitationsKota Kumagai and Yoshio Hayasaki (Utsunomiya Univ., Japan)

H48-2 Layering Liquid Crystal Panels and Microlens Arrays in Autostereoscopic DisplaysHironobu Gotoda (Nat'l Inst. Informatics, Japan)

A49-1 New Display Applications Enabled by High Resolution OLED FrontplanePaweł E. Malinowski, Tung-Huei Ke (IMEC, Belgium), Atsushi Nakamura (Fujifilm Electronic Materials Europe, Belgium), David Cheyns, Dieter Vander Velpen, Erwin Vandenplas, Kris Myny (IMEC, Belgium), Hylke Akkerman, Auke Jisk Kronemeijer, Jan-Laurens van der Steen (TNO/Holst Centre, Netherlands), Soeren Steudel (IMEC, Belgium), Gerwin Gelinck (TNO/Holst Centre, Netherlands), and Paul Heremans (IMEC, Belgium)

A49-2 Equipment for Future Generations of OLEDXuena Zhang, Jerry R Chen, Soo Y Choi (Display and Flexible Tech. Group, USA), Neil Morrison (Display and Flexible Tech. Group, Germany), Max McDaniel, Peter Nunan (Display and Flexible Tech. Group, USA), Kevin Moraes (Silicon Product Group, USA), and Robert J Visser (Applied Materials, USA)

B50-1 A Solution Metal Oxide-Driven 27.6-in. Flexible LCDYen-Yu Huang (Chunghwa Picture Tubes Ltd., Taiwan)

B50-2 Nano-Film Transfer Technology for Solution-Processed Multilayer Structured OLEDsKwan Hyun Cho, Dai Geon Yoon, and Kyung Tae Kang (KITECH, Korea)

C51-1 Retro-Reflective eTIR Technology for ePaper 2.0Robert Fleming, Sri Peruvemba, Robert Holman, Scott Ferguson (CLEARink Displays, USA), Bram Sadlik, and Thomas Johansson (CLEARink Displays, Canada)

C51-2 Large-Area Flexible Active Matrix Driven Electrophoretic E-Paper and Transferring Technology for Realizing Full-Color ApplicationsBo-Ru (Paul) Yang, Li Wang (Sun Yat-Sen Univ., China), Xidu Wang, Dianlu Hu, Yuhu Lin, Xi Zeng, and Yu Chen (Guangzhou OED Tech. Inc., China)

C51-3 Performance of Reflective Electro-Wetting Displays in out of Home ApplicationsDoeke J. Oostra (Etulipa, Netherlands)



D52-1 De Vries Smectics with Large Electro-Clinic Effect in SmA* Phase and Unusual Low-Layer Shrinkage in SmC* Phase – Prospective Materials for the New FLC DisplaysJagdish K. Vij (The Univ. of Dublin, Ireland)

D52-2 Electrical Suppressed Helix Ferroelectric Liquid Crystals for the Field Sequential Color DisplaysA. K. Srivastava, Liangyu Shi, V. G. Chigrinov, and Hoi-Sing Kwok (HKUST, Hong Kong)

D52-3 The Origin of Optical Nonlinearity of Liquid Crystals Revealed by Transient Grating ImagingKenji Katayama (Chuo Univ., Japan)

E53-1 Multi-Material Printing for 3D ElectronicsSteve Ready (Xerox Palo Research Center, USA)

E53-2 Printing Technology for Display ManufacturingZheng Cui (Chinese Academy of Science, China)

F54-1 Designing High Ductility Polymers for Stretchable OPVsYilin Li, Jonathan Onorato, Wesley Tatum, and Christine K. Luscombe (Univ. of Washington, USA)

F54-2 Oriented Grains with Preferred Low-Angle Grain Boundaries in Halide Perovskite Films Jong Hyeok Park (Yonsei Univ., Korea)

G55-1 Multi-Layer Metal Oxide Channel Thin-Film TransistorsDong Yoon Khim, Yen-Hung Lin (Imperial College London, UK), Hendrik Faber, and Thomas D. Anthopoulos (KAUST, Saudi Arabia)

G55-2 Solution-Processed Oxide TFTs for SensorsYou Seung Rim (Sejong Univ., Korea)

H56-1 The Application of 3D Virtual Fish to the Study about Fish CognitionMasaki Yasugi and Eiji Watanabe (NIBB, Japan)

H56-2 Application of 3D Display Based on Motion Parallax to Research of Animal BehaviorNozomi Nishiumi (Okazaki Inst. for Integrative Bioscience, Japan) and Eiji Watanabe (NIBB, Japan)

A57-2 OLEDs and FETs with Near Infrared Emission beyond 1000 nmArko Graf, Caroline Murawski (Univ. of St Andrews, UK), Martin Held, Yuriy Zakharko (Univ. Heidelberg, Germany), Laura Tropf (Univ. of St Andrews, UK), Jana Zaumseil (Univ. Heidelberg, Germany), and Malte C. Gather (Univ. of St Andrews, UK)



A57-3 Organic Light-Emitting Diodes for Optogenetic Stimulation with High Spatial ResolutionChangmin Keum, Caroline Murawski, Andrew Morton, Yali Deng, Gareth Miles, Stefan R. Pulver, and Malte C. Gather (Univ. of St Andrews, UK)

A57-4 Energy Level Alignments in Organic Electronic DevicesYeonjin Yi, Hyunbok Lee, and Minju Kim (Yonsei Univ., Korea)

B58-1 2D Material Based Light SourceYoung Duck Kim (Kyung Hee Univ., Korea)

B58-2 Highly Sensitive and Mechanically Decoupled Pressure and Strain Sensors for Application in Tactile PanelsSteve Park (KAIST, Korea)

C59-1 Flexible Touch Imaging Sheet Sensor Developed by Advanced Printed Electronics TechnologyToshihide Kamata, Shusuke Kanazawa, Taiki Nobeshima, Sei Uemura, Manabu Yoshida, Hirobumi Ushijima (AIST, Japan), Hitoshi Kondoh, Shinichi Nishi, and Yasuyoshi Mishima (JAPERA, Japan)

C59-2 Fibertronic Approach for Wearable AMOLEDsKyung Cheol Choi, Seonil Kwon, and Jeong Woo Park (KAIST, Korea)

D60-1 Technological Evolution for the Homeotropic Alignment of Nematic Liquid CrystalsShin-Woong Kang, Aboozar Nasrollahi, Vineet Kumar, Le Gia Trung, and Avinash Kumar Rella (Chonbuk Nat'l Univ., Korea)

D60-2 High-Reflective Colorful Films Based on Multi-Layer Cholesteric Structures Yong Li and Dan Luo (Southern Univ. of Science and Tech., China)

E61-1 Inkjet Printing Technology for DisplaySeog Soon Kim, Hyun Surk Kim, Jong Gyun Lee, and Chang Woo Seo (UniJet Co., Ltd., Korea)

E61-2 Advanced Inkjet Printing: A Disruptive Manufacturing Equipment Solution for Enabling Next-Generation DisplaysNeetu Chopra, Ranjana Shah, Ed Wrzesniewski, Amit Babel, Alex Ko, Shandon Alderson, and Chris Hauf (Kateeva®, USA)

F62-1 Thermoelectric Properties of Thermally Reduced Graphene Oxide Observed by Tuning Energy StatesHyunjung Lee (Kookmin Univ., Korea)



G63-1 Selective Formation of Single Crystal Si/Ge Stripe on Glass Substrate for TFTs by Novel μ-Chevron Laser Beam Annealing MethodWenchang Yeh and Seigo Moriyama (Shimane Univ., Japan)

G63-2 Meniscus Force Mediated Transfer of Single-Crystalline Silicon Thin Films on PET Substrate and Its Application to CMOS Circuit FabricationSeiichiro Higashi (Hiroshima Univ., Japan)

H64-1 Recent Progress in Computer Holography: Color and Monochrome 3D Imaging by Large-Scale Computer-Generated HologramsKyoji Matsushima (Kansai Univ., Japan)

H64-2 Time-Multiplexing Techniques for Holographic Three-Dimensional DisplaysYasuhiro Takaki (Tokyo Univ., Japan)


Author Index

A

Abe, Erina H40-3Abe, Yoshio P3-65Abe, Yoshio P3-125Abe, Yoshio P3-126Abe, Yoshio P3-130Adachi, Junji A41-1Adamovich, Vadim I. A17-1Ah, Chil Seong P2-78Ahn, Cheol Hyoun P3-41Ahn, Dae Hyun P2-130Ahn, H. P2-108Ahn, Hyungju P2-4Ahn, Hyungju P2-85Ahn, Hyungju P2-117Ahn, Jong Tae P2-21Ahn, Jong Tae P2-22Ahn, Jongtae B50-3Ahn, Nari P1-51Ahn, Nari P1-82Ahn, Nari P2-119Ahn, Nari P3-69Ahn, Nari P3-78Ahn, Nari P3-82Ahn, Nari P3-139Ahn, Seongdeok P1-94Ahn, Seong-Deok P3-1Ahn, Su A P1-98Ahn, Suk-Kyun D44-3Ahn, Suk-kyun P1-37Ahn, Sunggyun H64-3Ahn, Taek P3-4Ahn, Taek P3-5Ahn, Taek P3-6Ahn, Yong Nam P1-78Akkerman, Hylke B34-1Akkerman, Hylke A49-1Akram, Muhammad Abrar P2-62Alderson, Shandon E61-2Ali, Tariq E5-2Amalraj, F. W. F6-3Amano, H. F6-3Amoli, Vipin P1-131Anthopoulos, Thomas D. G55-1Araoka, Fumito D44-1Arreaga, David B50-4Arreaga, David E53-4Askari, Mehdi H40-4Avendano, Adrian B50-4Avendano, Adrian E53-4

B

Babel, Amit E61-2Back, Han Sol P1-47Back, Han Sol P3-24Bae, B. S. G23-2Bae, Byeong-Soo F14-3Bae, Byeong-Soo P1-4Bae, Byeong-Soo P1-5Bae, Byeong-Soo P1-56Bae, Byeong-Soo P1-106Bae, Byeong-Soo P3-2Bae, Byeong-Soo P3-136Bae, Geon P3-13Bae, Geon P3-14Bae, Goh-Myeong P2-16Bae, Jae-Hyun P3-116Bae, Jeong-Vin F46-3Bae, Ji-Hong P1-77Bae, Ji-Hong P3-15Bae, Jonguk A9-1Bae, Jong-Uk P2-39Bae, Joon Woo P2-19Bae, Kwang Soo P2-68Bae, Kwangsoo P2-100Bae, Kwangsoo P2-101Bae, Tae-Jun P2-7Bae, Tae-Jun P2-8Bae, Wan Ki B18-3Bae, Wan Ki P1-8Bae, Wan Ki P1-10Bae, Wan Ki P1-11Bae, Won-Gyu C11-2Baek, In-Hwan G23-5Baek, In-Hwan P1-41Baek, Jeong Ju P1-47Baek, Jeong Ju P3-24Baek, Jong-In P1-122Baek, Jong-Min D60-4Baek, Jongsang P1-133Baek, Kyung-Min P2-113Baek, Soyeon F38-5Baek, Soyeon P1-121Baek, Y. J. G23-2Bai, Jian P1-109Baik, Chan-Wook F14-2Baik, Seung-Eun P2-97Bail, Robert P3-83Bail, Robert P3-86Bakr, Osman P1-83Bang, Joon Ho G23-1Bang, Jung Suk P2-68Bang, Jungsuk P2-100

Author Index


Author Index

Bang, Jungsuk P2-101Bang, Kiseung E13-4Bang, Shin Woong P3-62Bang, Shin Woong P3-89Bao, Zhenan C11-2Basrur, Veidhes P3-72Baumann, Thomas A41-2Beers, William B26-2Bermundo, Juan Paolo P1-71Bi, Yuxin P2-60Bian, Mengying A25-2Boampong, Amos Amoako P1-53Boampong, Amos Amoako P3-50Bobbert, P.A. A1-1Bodenstein, Elisabeth A49-4Boher, Pierre C27-1Böhm, Edgar A25-3Bolton, Sean P1-95Bonnassieux, Yvan G7-3Bonnassieux, Yvan P1-65Bouhamri, Zine B10-4Bouten, Piet C. P. B34-1Bower, Christoper D20-3Brenner, Stephan E5-1Brill, Jochen G31-2Brown, Julie J. A17-1Burtman, V. P2-121Butts, Matthew B26-2Byun, Chun-Won D4-3Byun, Chun-Won A57-1Byun, Sung Hyun D20-4

C

Cai, Le D4-2Camardello, Sam J. B26-2Can, Thu Thuy Thi P3-67Cao, Wu P2-99Carlson, E. P2-108Cem, Ali E13-3Cha, Jun Hwan P3-132Cha, Yu-Jung P3-16Chae, Hee Nam P1-60Chae, Heeyeop E45-4Chae, Heeyeop P2-2Chae, Heeyeop P2-3Chae, Hyeokju P1-27Chae, Juae P2-58Chan, Wade P3-74Chan, Yun Fu P1-95Chang, Chih-Li P1-30Chang, Jun Hyuk B18-3Chang, Jung-Woo F38-2

Chang, Ki Cheol P1-47Chang, Ki Cheol P3-24Chang, Yi-lu B34-4Chang, Youn-Gyoung P3-38Chao, Chia-Hsin F46-1Char, Kookheon B18-3Chen, ChangDong G23-3Chen, Chao Ping D36-3Chen, Chii-Chang P2-109Chen, Guan-Ting P1-123Chen, Hao B18-1Chen, Hao P2-61Chen, Jerry R A49-2Chen, Jianping B34-3Chen, Jun P1-103Chen, Jun Sheng P2-54Chen, Junsheng D60-3Chen, Junsheng P1-107Chen, Junsheng P2-86Chen, Junsheng P2-92Chen, Junsheng P3-53Chen, Junsheng P3-54Chen, Junsheng P3-57Chen, Junsheng P3-59Chen, Junsheng P3-105Chen, liang P3-48Chen, Liang P3-52Chen, Lili P1-16Chen, Lili P1-17Chen, Ni P3-98Chen, Peng D36-1Chen, Qicheng P1-103Chen, Quanming P1-19Chen, Shuming B2-1Chen, Shuo-Wen C3-2Chen, Si P2-93Chen, Wade P1-132Chen, Wade P3-70Chen, Wade P3-75Chen, Wade P3-85Chen, Wade P3-87Chen, Wade P3-113Chen, Weitao P1-105Chen, Weitao P1-108Chen, Wendong C35-1Chen, Yanqing C51-4Chen, Yu C51-2Chen, Yuqiong P1-105Chen, Yuqiong P2-87Cheng, Ko-Ting P2-109Cheng, Kuei-Yuan P1-86Cheng, Pijian P2-89Cheng, Shuo-Hsien P2-120Cheon, Sang Hoon P2-78Cheong, Byoung-Ho G63-5Cheyns, David A49-1


Author Index

Chigrinov, V. G. D52-2Chigrinov, Vladimir G. D12-3Chin, Byung Doo P3-62Chin, Byung Doo P3-84Chin, Byung Doo P3-86Chin, Byung Doo P3-89Chin, Byungdoo P3-83Chiu, Che-Min C3-2Chiu, Chian-Yu P2-109Chiu, Chungyi P2-99Cho, Ah-Sell P3-81Cho, An-Thung P1-132Cho, An-Thung P3-70Cho, An-Thung P3-85Cho, An-Thung P3-87Cho, Byungwoo P2-72Cho, Byungwoo P2-73Cho, Byungwoo P2-74Cho, Byungwoo P2-75Cho, Byungwoo P2-76Cho, Byungwoo P2-77Cho, Doo-Hee B58-3Cho, Doo-Hee P1-94Cho, Hanchul E61-4Cho, Himchan C59-3Cho, Hye Jin P2-20Cho, Hyeon P3-133Cho, Hyun Min P1-58Cho, Hyung Koun P2-36Cho, Hyung Koun P3-41Cho, Hyunmin P3-72Cho, Hyunsu D4-3Cho, Hyunsu F14-3Cho, Hyunsu A57-1Cho, Hyunsu B58-3Cho, Hyunsu P2-111Cho, Hyunsu P2-116Cho, Jaebum P1-21Cho, Joowoan P3-97Cho, Kwan Hyun B50-2Cho, Kwan Hyun E61-4Cho, Kwan Hyun P2-6Cho, Kyeong Jun P2-110Cho, Kyung-Sang F14-2Cho, Min Hoe P2-39Cho, Moon Uk P3-16Cho, Myungjin H56-4Cho, Myungjin P2-72Cho, Myungjin P2-73Cho, Myungjin P2-74Cho, Myungjin P2-75Cho, Myungjin P2-76Cho, Myungjin P2-77Cho, Myungjin P2-79Cho, Myungjin P2-80Cho, Myungjin P2-81

Cho, Nam Sung D4-3Cho, Nam Sung F14-3Cho, Nam Sung A57-1Cho, Nam Sung B58-3Cho, Nam Sung P1-94Cho, Nam Sung P2-116Cho, Nam-sung P2-111Cho, Seok Ho F62-4Cho, Seong Heon C35-2Cho, Seong M. P2-78Cho, SeongYong D36-2Cho, Seung-Jin P3-48Cho, Seungse P1-118Cho, Seungse P1-119Cho, Shinuk F22-2Cho, Sung Haeng P3-64Cho, Sung Min P1-60Cho, Sung Woon P2-36Cho, Sungmin P3-3Cho, Yongjae B50-3Cho, Young Je P2-68Cho, Young Je P2-100Cho, Young Je P2-101Choe, Won Jun P2-63Choe, Won Jun P2-66Choe, Wonhee E5-4Choe, Wonhee P1-20Choi, Byeong-Ho P2-71Choi, Byung-Seok C35-2Choi, Cheol Hee P2-39Choi, Dae Keun P3-132Choi, Duck-kyun P1-111Choi, Duck-kyun P1-112Choi, Duck-Kyun P2-43Choi, Duck-Kyun P3-38Choi, Dukhyun P1-115Choi, E-Joon B42-3Choi, Geunseop H40-5Choi, Geunseop H64-3Choi, Geunseop P3-102Choi, Hee-Jin P3-101Choi, Hoi Wai F6-2Choi, Hojin P3-106Choi, Hojin P3-114Choi, Hui Jae P3-84Choi, Hwa-Jeong P3-81Choi, Hyekyoung F54-3Choi, Hyekyoung P1-7Choi, Hyeon-Joon P3-118Choi, Hye-Ryung P3-137Choi, Hyun Tae P2-21Choi, Hyun Tae P2-22Choi, Hyun-chul A9-4Choi, Hyun-Kyung P1-49Choi, Jaedong P3-82Choi, Jae-Kyung P2-16


Author Index

Choi, JeHyuk P2-13Choi, Ji Hun G55-4Choi, Ji-Won P2-37Choi, Ji-Won P2-38Choi, Jong Sun P3-20Choi, Jong Sun P3-21Choi, Jongmin F22-1Choi, Jung Sik P3-77Choi, Keun-Yeong P2-129Choi, Kihong H32-4Choi, Kyoung Soon P1-39Choi, Kyung Cheol F38-3Choi, Kyung Cheol C59-2Choi, Kyung Cheol F62-4Choi, Kyung Cheol P3-11Choi, Kyung Cheol P3-12Choi, Kyung Cheol P3-137Choi, Kyung Hee G55-4Choi, Kyung Ho P1-47Choi, Kyung Ho P3-24Choi, Min Hoe P2-40Choi, Myo Jeong P3-36Choi, Sang-Hun P2-142Choi, Se Ho P3-62Choi, Se Ho P3-89Choi, Seung Beom P3-35Choi, Seung-Jin P1-68Choi, Seung-Jin P3-39Choi, Seung-Jin P3-52Choi, Sinhu C11-4Choi, Soo Y A49-2Choi, Sooseok P1-34Choi, Soo-Young P2-15Choi, Suk-Won P3-116Choi, Suk-Won P3-117Choi, Suk-Won P3-118Choi, Sukyung A57-1Choi, Sung-Yool P1-46Choi, Tae-Hoon D36-4Choi, Tae-Hoon D60-5Choi, Tae-Hoon P2-90Choi, Tae-Hoon P2-91Choi, Won Chul G63-4Choi, Won Seok F46-3Choi, Woon-Seop P3-67Choi, Yong Ha F6-4Choi, Yongwoo P1-133Choi, Yoon Seuk P1-53Choi, Yoonseuk P2-126Choi, Yoonseuk P3-31Choi, You Jin E45-4Choi, YoungSeok P3-88Choi, Youngtae P1-93Choi, Yun Hee P2-66Choi, Yun Young P2-29Choi, Yun-Seok P2-105Chol, Kyung Cheol P1-43

Choo, Sooho P1-31Chopra, Neetu E61-2Chortos, Alex C11-2Chou, Ho-Hsiu C11-2Chou, Ho-Hsiu P1-30Chou, Jeff P3-74Chou, Jeff P3-113Chou, Tsu-Yu D12-4Chowdhury, Ashfaqul B26-2Chu, Hye Yong C35-2Chu, Hye Yong P1-122Chu, Hye Yong P2-19Chu, Hye Yong P3-97Chu, Hye-Yong P3-99Chu, Yifang P3-18Chueh, Chu-Chen P2-31Chung, Hoon-Ju P2-64Chung, Hoon-Ju P2-67Chung, Hyunsang P2-16Chung, Ju Sung P2-47Chung, Taek-Mo G23-5Chung, Taek-Mo P1-41Chung, Te-Chen D52-4Chung, Yoonyoung P1-29Clark, N. A. P2-108Coehoorn, R. A1-1Cohen, William B26-2Corsino, Dianne P1-71Craig, Stephene L. P1-118Cui, Zheng E53-2

D

Dai, Shu-Wen D12-4Danz, Norbert A33-2Darkhanbaatar, Nyamsuren H32-5Dashdavaa, Erkhembaatar H64-5Degtyarenko, K. M. P2-121Deng, Chuanfeng P1-57Deng, Huan H32-1Deng, Liguang P1-109Deng, Liguang P1-109Deng, Yali A57-3Deng, Zhuming P2-99Ding, Xianlin P1-103Do, Su-Min D60-5Doe, Jae-Chul P3-80Dong, Hui P1-72Dong, Ruijun P1-16Dong, Ruijun P1-17Dong, Yajie B18-1Donoghue, Evan E5-2Dou, Shuqian P1-109Du, Fangming B26-2


Author Index

Duan, Ran P1-18Duan, Xianxue P3-57Dubey, Deepak Kumar P1-91Dubey, Deepak Kumar P2-127Dubey, Deepak Kumar P2-137Durrant, James R. F54-2

E

Eersel, H. van A1-1Egorova, Olga P3-78Endo, Ayakata P2-120Eo, Sung-Wook E5-3Eom, Se-Yong P2-102Eom, Se-Yong P2-104Erk, Peter G31-2Ertekin, Elif H16-4

F

Faber, Hendrik G55-1Fan, Jiali C43-1Fang, Yen-Hsiang F46-1Fehse, Karsten E5-1Feng, Jing P3-49Feng, Longqiang P2-93Feng, Qibin H40-2Feng, Qibin H64-4Feng, Shanglei P3-129Ferguson, Scott C51-1Fleming, Robert C51-1Fu, Ting-Ting P3-75Fu, Ting-Ting P3-87Fu, Xiaoliang P1-109Fu-Gow, Tarntair P1-86Fujii, Kengo P3-103Fujii, Mami N. P1-71Fujikake, Hideo B42-2Fujioka, Hiroshi F46-2Fukagawa, Hirohiko A25-4Fukiage, Taiki H32-3Furuta, Mamoru P2-48

G

Gakiya, Futa G15-4Gakiya, Futa P1-67Gandla, Srinivas P1-27Gao, Jie P1-104

Gao, Jin-Cheng P1-68Gao, Jin-Cheng P3-39Gao, Jin-Cheng P3-48Gao, Jin-cheng P3-52Gao, Xiaoyu P1-64Gao, Xiaoyu P1-100Gao, Xingyu P3-129Gao, Yang P2-60Garg, Sourav G47-2Garrido-Menacho, Rita H16-4Gasonoo, Akpeko P2-126Gasonoo, Akpeko P3-31Gather, Malte C. A57-2Gather, Malte C. A57-3Ge, Bang-Tong P3-75Ge, Bang-Tong P3-87Gelinck, Gerwin A49-1Geng, Hongkai P3-122Gersdorff, Markus E45-1Geßner, André B10-3Ghosh, Amalkumar E5-2Gil, Sang-Keun H64-5Gim, Min-Jun P3-112Go, Hyeck P1-75Go, Ji-Young P1-66Go, Ji-Young P2-27Gong, Kui P3-57Gorecka, Ewa P2-85Gotoda, Hironobu H48-2Gottardi, S. A1-1Graf, Arko A57-2Grigalevicius, Saulius P2-137Großmann, Tobias A25-3Grüning, Michael C43-2Grüning, Michael C43-3Gu, Jiannan A25-2Gu, Renquan P3-49Gu, Yue P2-89Guo, Guang-Long P3-39Guo, Qiuyun P2-86Guo, Wei P3-18Guo, Weiqian D36-3Guo, Xiaojun C43-1Guo, Xiaojun D52-4Guo, Xugang G31-1Guo, Yuanhui P3-105Guo, Zongjie P1-103Gupta, Swadesh Kumar D12-3Guschl, Peter C. P2-142Guzman, E. P2-108

H

Ha, Hye Young P2-56


Author Index

Ha, Jewook P3-143Ha, Jong-Woon P2-46Ha, Juhwa P3-97Ha, Mi-Young P1-79Ha, Tae-Jun F30-4Ha, Tae-Jun P1-126Ha, Tae-Jun P2-34Ha, Yong Min P3-33Haase, Nils A33-2Hafeez, Hassan P1-89Hafeez, Hassan P1-90Hafeez, Hassan P2-136Hafeez, Hassan P3-132Hahm, Donghyo B18-3Hahn, Joonku H40-5Hahn, Joonku H56-3Hahn, Joonku H64-3Hahn, Joonku P1-22Hahn, Joonku P3-102Haida, Philipp P1-9Ham, Soungbo P3-3Han, Chang-Yeol P1-1Han, Chul Jong P3-36Han, Eun-Mi P1-75Han, Gyuhull P1-74Han, Hyemi F38-1Han, Jae-Ho P1-126Han, Jeong Hwan G23-5Han, Jeong Hwan P1-41Han, Jongseok P1-10Han, Jun Hee F38-3Han, Jun Hee P3-11Han, Jun Hee P3-12Han, Jun-Han D4-3Han, Jun-Han A57-1Han, Jun-Han P1-94Han, Ki-Lim P2-35Han, Ki-Lim P3-30Han, Rui P3-18Han, Seok Kyu P1-82Han, Si Hyun A41-4Han, Si Hyun P2-132Han, Si Hyun P2-133Han, SiHyun P2-114Han, Tae-Hee P3-141Han, Y. L. G23-2Han, Young Joon P2-6Han, Zhenyu P1-72Han, Zhenzhen P1-55Haque, Farjana F30-3Hartmann, Soeren E45-1Hasani, Amirhossein P1-39Hasegawa, Tatsuo G39-1Hauf, Chris B34-2Hauf, Chris E61-2Hayasaki, Yoshio H48-1

Hayasaki, Yoshio P3-91He, Fang P3-49He, Juan B18-1He, Min-Yang H32-1He, Rui P1-76He, Rui P2-96He, Rui P2-98He, Wei E53-3Healy, Matthew D. P2-142Hebb, Jeff B34-2Hedili, M. Kıvanç E13-3Heil, Holger A25-3Helander, Michael B34-4Held, Martin A57-2Heo, Daerak H40-5Heo, Daerak H64-3Heo, Daerak P1-22Heo, Daerak P3-102Heo, Do Won P2-58Heo, Jae Sang G39-4Heo, Jae Sang P2-33Heo, Jaeyeong P3-22Heo, Jaeyeong P3-127Heo, Jun Seok P3-37Heo, Yoon-Suk P3-61Heo, Yun Jin P2-107Heremans, Paul A49-1Heremans, Paul P1-102Heyne, Benjamin B10-3Higashi, Ryunosuke P2-48Higashi, Seiichiro G63-2Higashizako, Tatsuyuki G63-3Hirzel, Timothy P2-120Hoang, Nhu F30-3Hollis, Philip P1-95Holman, Robert C51-1Hong, Ahyoung B2-4Hong, Hyung Ki C19-3Hong, Jong-Ho P1-36Hong, Jun P1-104Hong, Jun P1-107Hong, Liu P3-55Hong, Liu P3-58Hong, Mun Pyo P1-50Hong, Mun Pyo P3-63Hong, MunPyo P3-44Hong, MunPyo P3-45Hong, MunPyo P3-46Hong, SangPyo P3-88Hong, Seonghwan P3-33Hong, Seongin P1-74Hong, Wan Pyo A41-4Hong, Wook E5-3Hong, Wook C43-4Hong, Yongtaek P1-33Hong, Yongtaek P3-133


Author Index

Hong, Yongtaek P3-138Hong, Yongtaek P3-142Hong, Yongtaek P3-143Hong, Yongtaek P3-144Hong, Yongtaek P3-145Hong, Young Ki P1-74Hongjun, Yu P3-55hongjun, Yu P3-56Hongjun, Yu P3-58Hongliang, Yuan P3-58Hori, M. F6-3Horng, Ray-Hua D28-4Horng, Ray-Hua P1-85Horng, Ray-Hua P1-86Horowitz, Gilles G7-3Horowitz, Gilles P1-65Hosono, Hideo G23-1Hsiao, Yu-Ting C19-2Hsu, Bo-Wei D12-4Hsu, James P1-132Hsu, James P3-70Hsu, James P3-74Hsu, James P3-85Hsu, James P3-87Hsu, James P3-113Hu, Dianlu C51-2Hu, Kehao P3-131Hu, Lingxiao P1-107Hu, Lingxiao P2-92Hu, Wei D36-1Hu, Wei P2-86Hu, Wei-Wei P1-68Hu, Wei-Wei P3-39Hu, Yuanyuan G31-3Huang, Dongsheng P2-93Huang, Genmao P1-64Huang, Pinshane Y. H16-4Huang, Shiqiang P2-86Huang, Shuping C35-1Huang, Wei A49-3Huang, Xing-Wei P2-65Huang, Xiuqi P1-55Huang, Xiuqi P1-64Huang, Xiuqi P1-100Huang, Yen-Yu B50-1Huang, Ying P1-100Hudak, Andreas C43-3Huh, Jae-Won D36-4Huh, Jae-Won D44-4Huh, Jin-Suk P2-123Huh, Jin-Suk P2-125Huh, Pilho P1-77Huh, PilHo P3-15Huh, Sujung P3-97Hur, JaeSeok P3-10Hur, JaeSeok P3-19Hwang, Chang Hun P3-62

Hwang, Changhun P3-89Hwang, Cheol Seong G23-5Hwang, Chi-Sun G55-4Hwang, Chi-Sun A57-1Hwang, Chi-Sun P1-24Hwang, Chi-Sun P2-78Hwang, Chi-Sun P3-64Hwang, Chi-Young G55-4Hwang, Do Kyung G47-3Hwang, Do Kyung P2-21Hwang, Do Kyung P2-22Hwang, Do-Hoon P2-46Hwang, Gyeong Seok P3-86Hwang, Haejung P1-117Hwang, Haejung P1-131Hwang, Han Wook P3-33Hwang, Hee Jae P1-115Hwang, Hyun-Jun P2-35Hwang, In-Chul P2-62Hwang, Ji-Eun P2-35Hwang, Jung Sub C27-4Hwang, Myung-Keun F14-1Hwang, Myung-Keun F46-3Hwang, Namhee P1-98Hwang, S. H. G23-2Hwang, Sang Soo P3-33Hwang, Youngbae P2-71Hwangbo, Hyeok E45-4Hwangbo, Yun P2-14Hwnag, Namhee P1-42

I

Ikarashi, N. F6-3Ikeda, Satoshi F62-2Im, Hea Lin P1-63Im, Healin P1-31Im, Seongil G47-2Im, Seongil B50-3Im, Tae Hong P3-7In, Da Young P3-73Inoue, Kotaro P2-72Inoue, Kotaro P2-73Inoue, Kotaro P2-74Inoue, Kotaro P2-75Inoue, Kotaro P2-76Inoue, Kotaro P2-77Inoue, Kotaro P2-79Inoue, Kotaro P2-80Inoue, Kotaro P2-81Inoue, Satoru G39-1Ishikawa, K. F6-3Ishikawa, Yasuaki P1-71Ishiki, Yuya G15-3


Author Index

Ishiki, Yuya G15-4Ishiki, Yuya P1-67Ishinabe, Takahiro B42-2Ito, Shusei P3-103Ito, Yusuke P3-65Iwasaki, Yukiko A25-4

J

Jain, Sagar M. F54-2Jalalah, Mohammed P2-1Jalalah, Mohammed P3-128Jang, Changwon E13-4Jang, Eun-Pyo P1-3Jang, Ho Won P1-39Jang, Hyeong Wook E45-3Jang, Hyun Jae P3-63Jang, Jin D4-2Jang, Jin F30-3Jang, Jin Nyoung P1-50Jang, Joohee P2-37Jang, Junho P1-5Jang, Kyungjin P1-133Jang, Sang Hee C35-2Jang, Sangsoo P2-111Jang, Seong Cheol P1-62Jang, Seong Hoon P1-96Jang, Seong Hoon P1-97Jang, YunSung P3-44Jang, YunSung P3-45Jao, Yun-Ting C3-2Jee, Chanhyuk P1-77Jee, Chanhyuk P3-15Jee, Eunsong P1-115Jee, Eunsong P1-131Jeon, Byoung-Gyu D60-5Jeon, Byoung-Gyu P2-90Jeon, Hyun Gil C35-2Jeon, Jae-Hong C35-4Jeon, Jae-Hong P3-17Jeon, Seok-Hee P1-87Jeon, Seokwoo B10-1Jeon, Yongmin P3-137Jeon, Youngjae P2-118Jeong, Byeong Guk B18-3Jeong, Do Hyeon G31-4Jeong, Eun Gyo P3-11Jeong, Eun Gyo P3-12Jeong, Geun Young P2-63Jeong, Hyein A17-4Jeong, Hyein P1-84Jeong, Hyun-Jun P2-35Jeong, Hyun-Jun P2-45

Jeong, Hyun-Jun P3-30Jeong, Hyun-Min P2-5Jeong, Il Kwon P1-110Jeong, Il Kwon P2-82Jeong, Jae Kyeong P2-40Jeong, Jae Kyeong P2-41Jeong, Jae Kyeong P2-42Jeong, Jae Kyeong P3-19Jeong, Jae Kyong P2-39Jeong, JaeKyeong P3-10Jeong, Jaewon P1-6Jeong, Jaewon P1-14Jeong, Jaewon P2-10Jeong, Jae-Woong D28-3Jeong, Jinyoung P3-106Jeong, Jinyoung P3-114Jeong, Jinyoung P3-120Jeong, Jong-Rae H32-5Jeong, Kwang-Un D44-2Jeong, Kwang-un P1-37Jeong, Kwang-Un P3-107Jeong, Seok Hwan P1-25Jeong, Seok-won P1-6Jeong, Seung-Hyun P2-113Jeong, Sohee F54-3Jeong, Sohee P1-7Jeong, Sohee P1-43Jeong, Sooim P2-119Jeong, Su-Hun C59-3Jeong, Sujin P3-142Jeong, Woo Cheol P1-58Jeong, Woo Seok P2-50Jeong, Wooseok P3-80Jeong, Yeonsu B50-3Jeong, Yong-Cheol E61-4Jeong, Yong-Cheol P3-23Jeong, Yong-Cheol P3-68Jesuraj, P. Justin P1-89Jesuraj, P. Justin P1-90Jesuraj, P. Justin P2-136Jesuraj, P. Justin P3-132Jeung, Jinpyeo P1-29Ji, Dong Seob P1-66Ji, Dong Seob P2-27Ji, Eunsong P1-129Ji, Seong-Min D44-4Ji, Seong-Min P2-91Ji, Yuan C35-1Jia, Peng P1-108Jiang, Bo A49-3Jiang, Hongxing D20-2Jiang, Tao P3-39Jiang, Tao P3-52Jiang, Xingqun P3-8Jiang, Xingtong C43-2Jin, Wenfeng P1-109


Author Index

Jin, Won-Yong F14-3Jin, Xing P1-7Jo, Gyoo Chul P2-19Jo, Hae Seong P2-94Jo, Jae-Hee P2-64Jo, Jae-Hee P2-67Jo, Jea Woong B26-1Jo, Jea-Woong F22-1Jo, Jeong-Wan G23-4Jo, Jung-Ho P1-3Jo, Sungchan P3-72Jo, Sungchan P3-97Jo, Sung-Chan C35-2Jo, Sung-Chan P1-36Jo, Sung-Chan P1-122Jo, Sung-Chan P2-56Jo, Sung-Chan P3-99Jo, Youngjin P1-21Jo, Young-Seo P2-91Jo, Yuong-Seo D44-4Johansson, Thomas C51-1Joo, Chul Woong B58-3Joo, Chul Woong P2-111Joo, Chul Woong P2-116Joo, Hyejin P1-36Joo, Kyung-Il P3-93Joo, Kyung-Il P3-101Joo, Young Woo P3-37Joo, Youngkuil P3-71Joosten, Dominik A25-3Joseph, Vellaichamy P1-91Jou, Jwo-Huei P1-91Jou, Jwo-Huei P2-127Jou, Jwo-Huei P2-137Ju, Byeong Kwon P1-88Ju, Byeong Kwon P1-92Ju, Byung Kwon P2-6Ju, Soeun P1-12Jun, Jaehun P1-133Jung, Byung Jun B2-4Jung, Heeyoung P1-11Jung, Hoyoung E5-4Jung, Hoyoung P1-20Jung, HyeYoung P3-88Jung, Hyo Jin P1-77Jung, Hyo Jin P3-15Jung, Hyun Jae P3-64Jung, Hyun Tae P1-58Jung, Hyunseung P3-140JUNG, Jae Hoon E45-1Jung, Kiro E45-2Jung, Kyung-Mo C35-4Jung, Kyung-Mo P3-17Jung, Minwoo H56-3Jung, Seok-Heon G31-4Jung, Seon Hyeak P2-124Jung, Sooim P3-139

Jung, Subin P3-97Jung, Sung Hyeon P2-36Jung, Sung Hyeon P3-41Jung, Sung June G7-3Jung, Sung June P1-65Jung, Sung Woo P2-20Jung, Sung Yeop G7-3Jung, Sung Yeop P1-65Jung, Sungjune P2-117Jung, Sung-Min P1-23Jung, Tae Soo P3-34Jung, Tae Soo P3-40Jung, Uihyun P1-25Jung, Uihyun P1-27Jung, Yonghee P3-140

K

Kaiser, Joachim A25-3Kakinuma, Ryota P3-103Kamata, Toshihide C59-1Kanayama, Ippei P3-95Kanazawa, Shusuke C59-1Kang, Bang-Kwon P3-61Kang, Byeong-Cheol P1-126Kang, Byung Ha B42-1Kang, Byung Ha P2-47Kang, Byung-Jun B42-3Kang, Chang-Mo P2-15Kang, Chong-Yun P1-41Kang, Dongwoo A9-1Kang, DongWoo P3-88Kang, Hang P3-73Kang, Hoon P1-23Kang, InByeong A9-4Kang, In-Byeong P1-23Kang, Jae-Wook F14-3Kang, Jea-Wook P1-76Kang, Ji-Ho P2-122Kang, Jisu P1-42Kang, Jongseok P2-16Kang, Jun Ki P2-26Kang, Keon-Woo F38-2Kang, Kibum D4-1Kang, Kyung Jin C27-3Kang, Kyung Seok P1-77Kang, Kyung Seok P3-15Kang, Kyung Tae B50-2Kang, Kyung Tae E61-4Kang, Kyung Tae P2-6Kang, Min Jin G63-5Kang, Moon Hee P3-123Kang, Moon Sung P1-116Kang, Moon Sung P1-117


Author Index

Kang, Saewon P1-118Kang, Saewon P1-119Kang, Seong Jun B10-2Kang, Seung-Mo F14-3Kang, Seung-Mo P1-106Kang, Seung-Mo P3-136Kang, Seung-Youl P3-1Kang, Shin-Won P2-5Kang, Shin-Woong D60-1Kang, Shin-Woong P2-106Kang, Shin-Woong P3-109Kang, Sujie P3-9Kang, Suk-Ju F38-2Kang, Tae-Woon P3-25Kang, Tae-Woon P3-26Kang, Tae-Woon P3-27Kang, You Jung P3-86Kang, Youjung P3-83Kang, Yu Jin P2-132Kano, H. F6-3Karakawa, Makoto P1-69Katayama, Kenji D52-3Kawabe, Takahiro H32-3Kawakita, Masahiro H40-1Kawamorita, Seiya B42-2Kawamoto, Naoya G15-4Kawamura, Midori P3-65Kawamura, Midori P3-125Kawamura, Midori P3-126Kawamura, Midori P3-130Kazempourradi, Seyedmahdi E13-3Ke, Tung-Huei A49-1Ke, Tung-Huei P1-102Keibler-Willner, Claudia P1-95Keum, Changmin A57-3Keun, Shin Moo P1-72Khayrullin, Ilyas E5-2Khim, Dong Yoon G55-1Khuderchuluun, Anar H64-5Ki, Gyeongmin P3-4Ki, Gyeongmin P3-5Ki, Gyeongmin P3-6Kiba, Takayuki P3-65Kiba, Takayuki P3-125Kiba, Takayuki P3-126Kiba, Takayuki P3-130Kikutake, Naohiro P2-80Kim, Ahreum P2-126Kim, Ahreum P3-31Kim, Beomjune H56-3Kim, Beomshik P3-97Kim, Beom-Su P3-30Kim, Bo Sung P2-95Kim, Bo Sung P3-63Kim, Bo Sung P3-64Kim, Brian P2-62

Kim, Byeollim P1-114Kim, Byeong-Cheon P3-117Kim, Byeonggon P2-115Kim, Byoungkyun P2-71Kim, Byungsoo A9-4Kim, Chang Sub P1-47Kim, Chang Wan P2-13Kim, Chang-Hyun F30-1Kim, Chan-Soo P3-29Kim, Cheol-Su P2-72Kim, Cheol-Su P2-73Kim, Cheol-Su P2-74Kim, Cheol-Su P2-75Kim, Cheol-Su P2-76Kim, Cheol-Su P2-77Kim, Chi-Heon P2-115Kim, Chiwoo E45-2Kim, Da Hyun P3-123Kim, Dae Ho P2-44Kim, Daehyun P3-72Kim, Dae-yoon P1-37Kim, Do Hwan P1-54Kim, Do Hwan P1-115Kim, Do Hwan P1-116Kim, Do Hwan P1-117Kim, Do Hwan P1-129Kim, Do Hwan P1-131Kim, Do Hwan P2-129Kim, Do Hyun P2-13Kim, Do Hyun P3-73Kim, Doh Hoon E45-2Kim, Dohong F38-3Kim, Dohong P3-11Kim, Dong Hwan P2-100Kim, Dong Hyun P1-89Kim, Dong Hyun P3-69Kim, Dong Soo P3-50Kim, Dong Uk P1-101Kim, Dong Whan P2-68Kim, Dong Woo P2-26Kim, Dong Woo P2-30Kim, Dong Woo P3-34Kim, Dong-Gyu P2-43Kim, Dong-gyu P3-38Kim, Donghwan P2-101Kim, Dong-uk P3-121Kim, Dongwook A41-3Kim, Dongwook P3-20Kim, Dongwook P3-21Kim, Dongyeon P3-138Kim, Dowon P2-69Kim, Duk Hyun H56-5Kim, Eui Hyuk F38-5Kim, Eui Hyuk P1-121Kim, Eunah P3-82Kim, Eun-Ah P3-81


Author Index

Kim, Eungjun A57-1Kim, Eun-Jin P2-102Kim, Eun-Jin P2-103Kim, Eun-Jin P2-104Kim, Eunkyoung F22-3Kim, Geonhee P3-145Kim, Gi Eun P2-53Kim, Gieun P1-26Kim, Hak-Rin P2-115Kim, Hak-Rin P3-93Kim, Hak-Rin P3-101Kim, Hak-Sung P2-35Kim, Hee Jun H24-4Kim, Hee Jun B42-1Kim, Hee Jun P2-24Kim, Hee Jun P3-34Kim, Hee Jun P3-40Kim, Heendol P2-69Kim, Hee-Ok G55-4Kim, Ho Kwon E5-3Kim, Ho-Yong P1-13Kim, Hwajeong F38-1Kim, Hwang-Beom A1-5Kim, Hwang-Bum A17-3Kim, HwanMyeong P3-88Kim, Hwi-Jae P1-2Kim, Hyejin P2-2Kim, Hyeokjin P3-106Kim, HyeonA P3-10Kim, Hyeon-A P3-19Kim, Hyeong Wook P2-95Kim, Hyeonggyu P3-143Kim, Hyo Sun P2-55Kim, Hyo Sun P2-56Kim, Hyo Sun P2-57Kim, Hyo-Jun B26-3Kim, Hyonwoong P1-70Kim, Hyoung-Do P1-44Kim, Hyun Jae H24-4Kim, Hyun Jae B42-1Kim, Hyun Jae G47-4Kim, Hyun Jae G55-3Kim, Hyun Jae G55-5Kim, Hyun Jae P2-24Kim, Hyun Jae P2-25Kim, Hyun Jae P2-26Kim, Hyun Jae P2-30Kim, Hyun Jae P2-47Kim, Hyun Jae P2-51Kim, Hyun Jae P3-33Kim, Hyun Jae P3-34Kim, Hyun Jae P3-40Kim, Hyun Surk E61-1Kim, Hyung Tae G55-3Kim, Hyung Tae G55-5Kim, Hyung Tae P1-60Kim, Hyun-Gu A1-3

Kim, Hyun-Gu A17-3Kim, Hyun-Jae P3-36Kim, Hyun-Sik P3-42Kim, Hyun-Suk P1-44Kim, Hyun-Suk P1-59Kim, Hyun-Suk P1-61Kim, Hyun-Suk P1-62Kim, Jae Kyoung P1-122Kim, Jae Moon C35-4Kim, Jae Moon P3-17Kim, Jae Young P2-32Kim, Jaehan P3-104Kim, Jaehee P1-117Kim, Jae-Hoon B42-3Kim, Jae-Hoon P2-112Kim, Jae-Hoon P2-113Kim, Jaehyun P1-6Kim, Jaehyun P1-14Kim, Jaehyun P2-10Kim, Jae-Hyun P2-14Kim, Jang-Joo A1-3Kim, Jang-Joo A1-5Kim, Jang-Joo A17-3Kim, Jang-Joo F38-4Kim, Jang-Joo P2-123Kim, Jang-Joo P2-125Kim, Jang-Joo P2-135Kim, Jayoung P1-46Kim, Jeonghun P1-31Kim, Jeonghyun H24-2Kim, JeongOh P3-10Kim, JeongOh P3-19Kim, Jeseob P1-48Kim, Ji Min E45-3Kim, Ji-Hoon B26-3Kim, Jihye P3-83Kim, Ji-Hye P3-86Kim, Jihyun F6-4Kim, Jin-Beom P3-68Kim, Jin-Ho C35-4Kim, Jin-Hun D36-4Kim, Jin-Oh P1-120Kim, Jin-Oh P1-124Kim, Jin-Oh P1-125Kim, Jin-Oh P1-127Kim, Jin-Pil P3-38Kim, Jinwoong P3-92Kim, Jinwoong P3-96Kim, Jinwoong P3-104Kim, Jiwan P1-12Kim, Jiwan P2-9Kim, Jiyong P1-99Kim, Jong Rea P2-66Kim, Jong Woo P1-58Kim, Jong-Beom P1-79Kim, Jong-Hoon P1-1Kim, Jong-Hoon P1-2


Author Index

Kim, Jong-Hyun P2-94Kim, Jong-un P1-112Kim, Jongyoon P3-107Kim, Jongyoon P3-108Kim, Joo Sung P1-54Kim, Joo Sung P1-115Kim, Joo Sung P1-131Kim, Joo Yeon P2-78Kim, Juhyung P1-6Kim, Juhyung P2-10Kim, Jun Young E61-4Kim, Jung Hwan G23-1Kim, Jungho P1-99Kim, Jun-Ho A25-3Kim, Ju-Ryong P3-50Kim, Ju-Seong P2-5Kim, Kang Lib P3-124Kim, Kang-Han P3-23Kim, Kang-Han P3-68Kim, Kanghyun P3-69Kim, Ki Hyun P1-82Kim, Ki Ju P1-98Kim, Kihyun P3-78Kim, Kiseo P1-122Kim, Kisoo E45-2Kim, Kitae P3-115Kim, Kwangsoo P1-22Kim, Kwan-soo A9-4Kim, Kwon-Hyeon A1-3Kim, Kwon-Hyeon F38-4Kim, Kwon-Hyeon P2-123Kim, Kwon-Hyeon P2-125Kim, Kwon-Hyun A17-3Kim, Kyoung-Youm P1-99Kim, Kyu Sung P1-101Kim, Kyung Deok P3-63Kim, Kyung Ho P3-65Kim, Kyung Ho P3-125Kim, Kyung Ho P3-126Kim, Kyung Ho P3-130Kim, KyungDuck P3-46Kim, Kyunghwan P1-11Kim, Kyung-Hye P1-1Kim, Kyungji P1-33Kim, Mac P3-25Kim, Mac P3-26Kim, Mac P3-27Kim, Mi-Hee P3-81Kim, Min Jae P2-40Kim, Min Jae P3-19Kim, Min Kook P3-36Kim, Min Su P3-111Kim, Min-Hoi P1-53Kim, Min-Hoi P3-50Kim, Minji P1-113Kim, Min-Ji P1-127Kim, Min-Joon P2-141

Kim, Minju B50-3Kim, Minju A57-4Kim, Mugeon H40-5Kim, Mugeon H64-3Kim, Mugeon P1-22Kim, Myeong-ho P1-111Kim, Myeong-ho P1-112Kim, Myeong-Ho P2-43Kim, Myeong-Ho P3-38Kim, Myung-Gil G39-4Kim, Na Yeon P1-88Kim, Nam H32-5Kim, Nam H64-5Kim, Nam P1-87Kim, Nam Su P2-124Kim, Nari E5-4Kim, Nari P1-20Kim, Sae-Wan P2-5Kim, Sang Kook P2-66Kim, Sang Soo P2-138Kim, Sang Soo P2-139Kim, Sang Soo P2-140Kim, Sang Soo P2-141Kim, Sang-Ho P3-99Kim, Sang-Hyeok D44-4Kim, Sang-Hyeok D60-4Kim, Sang-Hyeok P3-135Kim, Sanghyun P1-14Kim, Sangsoo P2-118Kim, Sang-Soo P2-7Kim, Sang-Soo P2-8Kim, Sangwon P1-15Kim, Sangwon P2-118Kim, Sang-won P2-138Kim, Sang-won P2-139Kim, Sang-Won P2-140Kim, Sangwoo P1-36Kim, Se Hwan P1-63Kim, Sehoon E5-4Kim, Sehoon P1-20Kim, Seog Soon E61-1Kim, Seong Jae P2-50Kim, Seong Keun G23-5Kim, Seong Keun P1-41Kim, Seong Keun P2-128Kim, Seong-Bok E13-2Kim, Seongjun C11-3Kim, Seongsin G47-2Kim, Seo-Yun P2-1Kim, Seo-Yun P3-128Kim, Seul Gi P3-63Kim, SeulGi P3-46Kim, Seung P3-32Kim, Seung Man P1-38Kim, Seung-Duk P3-79Kim, Shang-U P1-93Kim, Si Woo P2-130


Author Index

Kim, So Hyeon P3-37Kim, So Young P1-129Kim, So Young P1-131Kim, Soo Young P1-39Kim, Soo Young P2-12Kim, Sujung P2-78Kim, Sun Jung E45-4Kim, Sun Kook P1-63Kim, Sung Hyun P3-25Kim, Sung Hyun P3-26Kim, Sung Hyun P3-27Kim, Sung Jin P1-60Kim, Sung Ki P2-52Kim, Sung Su P3-62Kim, Sung Su P3-89Kim, Sung Woo P2-136Kim, Sungchul P1-122Kim, Sungho P1-93Kim, Sungjin A9-1Kim, Sung-Woo P1-23Kim, Sunkook P1-25Kim, Sunkook P1-27Kim, Sunkook P1-31Kim, Sunkook P1-74Kim, Sun-Kyo P2-11Kim, SunPhil H16-4Kim, Tae Hyung P2-110Kim, Tae In P1-46Kim, Tae Kyoung P1-90Kim, Tae Kyoung P3-16Kim, Taehyun C59-4Kim, Tae-Yong P1-79Kim, Tae-Youb P2-78Kim, Tae-Young P3-66Kim, Tai Kyu P2-41Kim, Won Tae C35-2Kim, Won-Gi B42-1Kim, Won-Gi G55-3Kim, Won-Gi G55-5Kim, Won-Gi P2-24Kim, Won-Gi P2-25Kim, Won-Gi P2-47Kim, Woo Young P1-98Kim, Woong P2-59Kim, Yeong-gyu B42-1Kim, Yeong-Gyu G55-3Kim, Yeong-Gyu P2-25Kim, Yeonsik P1-92Kim, Yeuntae P3-72Kim, Yohan B10-3Kim, Yong Chan P3-43Kim, Yong duk P1-80Kim, Yong Ho P1-4Kim, Yong Ho P1-56Kim, Yong Ho P3-2Kim, Yong Ho P3-136Kim, Yongchan P1-129

Kim, Yongduk F14-1Kim, Yong-Hae P2-78Kim, Yong-Hoon P2-32Kim, Yong-Hoon P2-33Kim, Yong-Hoon P2-34Kim, Yong-Hoon P3-35Kim, Yongjin P1-38Kim, Yong-Sang C35-4Kim, Yong-Sang P3-17Kim, Yong-Seog P1-13Kim, Yong-Seog P2-11Kim, Yong-Seog P3-29Kim, Yoon Jung C19-4Kim, Yoon-Jeong G23-4Kim, Yoon-Jung P2-55Kim, Youheon P2-116Kim, Youheon P2-135Kim, Young Duck B58-1Kim, Young Hun P1-47Kim, Young Hun P3-24Kim, Young In P2-69Kim, Young Kwan P1-42Kim, Young Kwan P1-98Kim, Young Kyu P2-47Kim, Young-Chan P3-99Kim, Younghoon F22-1Kim, Young-Hoon D12-1Kim, Young-Hoon C59-3Kim, Young-Hoon P3-141Kim, Young-Joo B26-3Kim, Youngjun P1-110Kim, Youngkyoo F38-1Kim, Youngsik P1-7Kim, Yul Ki P2-110Kim, Yun Hyeok P1-4Kim, Yun-Hi A25-1Kim, Yun-Hi P2-116Kim, Yun-Hi P2-117Kim, Yun-Hi P2-135Kim, Yunseok P1-93Kim, Yun-Soo P3-67Kiyota, Junya P1-40Kkan, Ziyauddin P1-118Klimes, Kody D12-2Klimov, Victor I. B2-3Ko, Alex E61-2Ko, Donghyun P1-8Ko, Hyunhyub P1-118Ko, Hyunhyub P1-119Ko, Ik Jang A33-3Ko, Jae-Hyeon P1-80Ko, Keumjin P1-76Ko, Young Wook F14-1Ko, Young Wook P1-80Ko, Yun-Hyuk P2-1Ko, Yun-Hyuk P3-128Kobayashi, Atsushi F46-2


Author Index

Kobayashi, Motoshi P1-40Koh, Jai-Hyun P2-69Kondo, N. Shimizu H. F6-3Kondoh, Hitoshi C59-1Kong, Taejin P3-72Konishi, Naoki P2-80Koo, Jahyeon P3-107Koo, Jehyoung P1-116Koo, Jungsik P2-72Koo, Jungsik P2-73Koo, Jungsik P2-74Koo, Jungsik P2-75Koo, Jungsik P2-76Koo, Jungsik P2-77Kopylova, T. N. P2-121Koretomo, Daichi P2-48Koswaththage, Charith Jayanada G63-3Kronemeijer, Auke Jisk A49-1Kubo, Hibiki E13-1Kudlacek, Pavel B34-1Kudlacek, Pavel P1-95Kujime, Ryosuke P2-84Kulemanov, I. V. P2-121Kumagai, Kota H48-1Kumagai, Kota P3-91Kumai, Reiji G39-1Kumar, T Arun P3-28Kumar, Vineet D60-1Kumar, Vineet P2-106Kumar, Vineet P3-109Kung, Patrick G47-2Kurokawa, Fujio F62-2Kurosawa, Tadanori C11-2Kusterer, Roman P1-9Kwag, Jin Oh C35-2Kwag, Jin Oh P2-19Kwag, Jinoh P1-36Kwag, Jinoh P1-122Kwag, Jinoh P3-72Kwag, Jin-Oh P3-99Kwak, Jeonghun B2-4Kwak, Joon Seop F6-1Kwak, Joon Seop P3-16Kwak, Min-Gi P3-100Kwak, Young Shin P2-56Kwak, Young Shin P2-57Kwok, Hoi Sing D12-3Kwok, Hoi Sing D28-2Kwok, Hoi-Sing D52-2Kwon, Byoung-Hwa D4-3Kwon, Byoung-Hwa A57-1Kwon, Byoung-Hwa P2-111Kwon, Byoung-Hwa P2-116Kwon, Gisuk P3-139Kwon, Hyeokjae G47-2Kwon, Hyukyun H24-3

Kwon, Jaejoong P3-97Kwon, Jang Hyuk A33-3Kwon, Jang Hyuk P2-128Kwon, Jang Hyuk P2-130Kwon, Jeong Hyun P3-137Kwon, Jin-Beom P2-5Kwon, Jungyun B58-3Kwon, Jungyun P1-94Kwon, Junyoung H8-3Kwon, Junyoung H16-4Kwon, Ki-Chul H32-5Kwon, Kwang-Ho P3-1Kwon, Kye-Si C11-3Kwon, Kye-Si E61-3Kwon, O Eun F14-3Kwon, O Eun B58-3Kwon, O Eun P1-94Kwon, Owoong P1-93Kwon, Se Young P1-120Kwon, Seonil C59-2Kwon, Soon-Bum P2-102Kwon, Soon-Bum P2-103Kwon, Soon-Bum P2-104Kwon, Soon-Ki P2-117Kwon, Soon-Yong P2-16Kwon, Sung Min G39-4Kwon, SungYong P3-44Kwon, Tae In P2-29

L

Lai, Zhengde P2-60Lau, Kei May D28-2Le, Quyet Van P1-39Le, Quyet Van P2-12Le, Zhang P3-56Lee, Bomi P3-119Lee, Bu-Yeol P1-23Lee, Byeongmoon P1-33Lee, Byeongmoon P3-133Lee, Byeongmoon P3-142Lee, Byeongmoon P3-145Lee, Byoungho E13-4Lee, Byoungho P1-21Lee, Byoungho P3-98Lee, Byoungho P3-138Lee, Chan Ung C43-4Lee, Chang Kyu P3-73Lee, Chang Min P1-89Lee, Chang Suk P2-107Lee, Changhee P1-8Lee, Changhee P1-9Lee, Changhee P1-10Lee, Changhee P1-11


Author Index

Lee, Changhee P3-142Lee, Changmin P2-3Lee, Chanhee H56-3Lee, Chan-Jae P3-79Lee, Chan-Jae P3-100Lee, Cheon-Myeong P3-99Lee, Chiayu P2-99Lee, Chil Won P3-84Lee, Chil Won P3-86Lee, Chilwon P3-83Lee, Chul C35-3Lee, Chulyeon F38-1Lee, Da Yoon P3-43Lee, Dayoon P1-129Lee, Deok Yeong P1-128Lee, Deuk Rak P3-77Lee, Doh C. B18-3Lee, Dong Jae P3-123Lee, DongHyeok P3-46Lee, Dong-Myung B42-3Lee, Dong-Myung P2-112Lee, Dong-Seon P2-15Lee, Doo Hyoung P1-51Lee, Doyeon P2-131Lee, Eun Ji P1-88Lee, Gwan-Hyoung H8-3Lee, Gwan-Hyoung H16-4Lee, Gyujeong P1-36Lee, Gyu-Su P2-69Lee, Ha Lim A41-4Lee, Ha Lim P2-133Lee, Haechang H24-3Lee, Hae-Won P1-44Lee, Haksoo P3-3Lee, Han Eol F62-3Lee, Han Eol P3-47Lee, Han Eol P3-134Lee, Han-Koo P2-117Lee, Hark June B18-3Lee, Hee Soo P2-51Lee, Hee Soo P3-40Lee, Hee Sung P2-52Lee, Heekeun P3-72Lee, Ho Jin P3-43Lee, Ho Seung F38-3Lee, Ho Seung P3-11Lee, Hochan P1-119Lee, Hojin P1-129Lee, Hojin P2-129Lee, Hojin P3-140Lee, Hongju P1-133Lee, Ho-Nyun E61-4Lee, Hyeonseok P1-130Lee, Hyeonwoo C59-4Lee, Hyesog P3-99Lee, Hyo Seok P3-22Lee, Hyo Sun P2-21

Lee, Hyun Seok P2-38Lee, Hyun Sup C35-2Lee, Hyuna P2-130Lee, Hyunbok A57-4Lee, Hyungin P2-9Lee, Hyunhwan P1-5Lee, Hyunhwan P1-106Lee, Hyunjung F62-1Lee, Hyunkoo A57-1Lee, Hyun-Mo P2-35Lee, Hyun-Mo P2-45Lee, I Sak P2-30Lee, In Hye P2-88Lee, In Jun P1-56Lee, In-Seon P2-140Lee, J. M. G23-2Lee, Jae Hak P1-38Lee, Jae Hee P1-73Lee, Jae Hee P3-47Lee, Jae Hoon P2-69Lee, Jae Kyum P2-30Lee, Jae Seob P2-19Lee, Jae Woo P3-69Lee, Jaeho F14-3Lee, Jaeho F14-5Lee, Jaeho A33-1Lee, Jaeho C59-4Lee, Jaeho P2-134Lee, Jae-Hoon P2-81Lee, Jae-Hyun P1-49Lee, Jae-Hyun P1-53Lee, Jae-Hyun P2-126Lee, Jae-Hyun P3-31Lee, Jae-min P1-87Lee, Jeong Rak P3-80Lee, Jeong-Chan P1-127Lee, Jeong-Ik D4-3Lee, Jeong-Ik P1-94Lee, Jeong-Ik P2-78Lee, Ji Youl G31-4Lee, Ji Youl P2-46Lee, Ji-Eun P2-1Lee, Ji-Eun P3-128Lee, Ji-Hoon P3-76Lee, Ji-Hoon P3-106Lee, Ji-Hoon P3-107Lee, Ji-Hoon P3-108Lee, Ji-Hoon P3-114Lee, Ji-Hoon P3-120Lee, Ji-Hye P3-82Lee, Jin Hyeok P2-26Lee, Jin Hyeok P3-34Lee, Jin Hyeok P3-40Lee, Jin Young P2-53Lee, Jin-Kyun G31-4Lee, Jinyoung P1-26Lee, Jinyoung P1-97


Author Index

Lee, Jong Chan P1-90Lee, Jong Gyun E61-1Lee, Jongchan P3-1Lee, Jonghee F14-3Lee, Jonghee P1-94Lee, Jonghee P2-111Lee, Jonghee P2-116Lee, Jonghee P3-31Lee, Jong-Wan P1-80Lee, Jong-Young H16-4Lee, Joon Goo E5-3Lee, Joon Goo C43-4Lee, Joonhyung P1-25Lee, Ju Young P2-130Lee, Jun Ho P2-33Lee, Jun Yeob A41-4Lee, Jun Yeob P2-132Lee, Jun Yeob P2-133Lee, Junghoon P3-97Lee, Jun-Sun P3-38Lee, JunYeob P2-114Lee, Junyong P2-94Lee, Kang Me D4-3Lee, Kangtaek B26-3Lee, Keon Jae D28-1Lee, Keon Jae F62-3Lee, Keon Jae P1-73Lee, Keon Jae P3-7Lee, Keon Jae P3-47Lee, Keon Jae P3-134Lee, Keong-Jin P1-23Lee, Keun Sam G63-4Lee, Kyung-Ha P3-79Lee, Min Seok P3-132Lee, Min Uk G23-4Lee, Min-Chul P2-72Lee, Min-Chul P2-73Lee, Min-Chul P2-74Lee, Min-Chul P2-75Lee, Min-Chul P2-76Lee, Min-Chul P2-77Lee, Min-Chul P2-79Lee, Min-Chul P2-80Lee, Min-Chul P2-81Lee, Min-Uk G39-4Lee, Myong Hoon P1-76Lee, Myong-Hoon P2-96Lee, Myong-Hoon P2-97Lee, Myong-Hoon P2-98Lee, Myong-Hoon P2-106Lee, Myong-Hoon P3-109Lee, Pei-Yi Lai P2-65Lee, Pooi See H8-1Lee, S. M. G23-2Lee, Sang Ho P3-73Lee, Sang-Hun P1-76Lee, Sanghyun P1-6

Lee, Sanghyun P2-10Lee, Sang-Jin P3-25Lee, Sang-Jin P3-26Lee, Sang-Jin P3-27Lee, Seokyeong F38-5Lee, Seokyeong P1-121Lee, Seong Hyeon P3-30Lee, Seong-Jun P2-102Lee, Seong-Jun P2-103Lee, Seong-Jun P2-104Lee, Seung Bae P2-56Lee, Seung Hee P2-50Lee, Seung Hee P2-107Lee, Seung Hee P2-110Lee, Seung Hee P3-28Lee, Seung Hee P3-111Lee, Seung Hyun P3-134Lee, Seung Hyung F62-3Lee, Seung Jae P3-111Lee, Seung Kyu D60-3Lee, Seung Kyu P1-107Lee, Seung Kyu P2-54Lee, Seung Kyu P2-86Lee, Seung Kyu P2-92Lee, Seung Kyu P3-53Lee, Seung Kyu P3-54Lee, Seung Kyu P3-57Lee, Seung Kyu P3-59Lee, Seung Min P1-58Lee, Seung Won P1-121Lee, Seung Yeon P2-130Lee, Seung-Hee P3-2Lee, Seung-Hoon P1-49Lee, Seunghwan P1-33Lee, Seunghwan P3-138Lee, Seunghwan P3-144Lee, Seungjae P1-21Lee, Seung-Jae P2-1Lee, Seung-Jae P3-128Lee, Seungjun P2-122Lee, SeungKyu P3-105Lee, SeungWon F38-5Lee, Seung-Woo P2-64Lee, Seung-Woo P2-67Lee, SiHyung P3-10Lee, Sin Woo E45-3Lee, Sin-Doo P3-9Lee, Sin-Hyung P3-9Lee, So Hyeon P1-59Lee, So Hyung P2-52Lee, So-Hyeon P3-50Lee, Song Eun P1-42Lee, Song Eun P1-98Lee, Soo-Yeon P2-69Lee, Su Eon P3-19Lee, Su Kyong P1-4Lee, Subin A33-3


Author Index

Lee, Suhui D4-2Lee, Suhyeon B2-4Lee, Sung Guk P2-107Lee, Sung Guk P3-28Lee, Sung-Min F62-4Lee, Tae Hoon G39-3Lee, Tae-Hyun P3-93Lee, Taek-ki P2-138Lee, Tae-Woo D12-1Lee, Tae-Woo F38-3Lee, Tae-Woo C59-3Lee, Tae-Woo P3-11Lee, Tae-Woo P3-141Lee, Wanheui P1-93Lee, Wen-Ya G47-1Lee, Wen-Ya P1-123Lee, Wen-Ya P2-31Lee, Won Ho P2-136Lee, Won Jung P3-77Lee, Woo Bin P2-32Lee, Woo Young P2-119Lee, Woochan P2-134Lee, Wookjae P3-71Lee, Woosik F14-1Lee, Woosuk P2-2Lee, Yong Jeong G7-3Lee, Yong Jeong P1-65Lee, Yong Su P2-19Lee, Young Hee P2-110Lee, Youngoh P1-119Lee, Youngsu P1-118Lee, Yun Bok P1-107Lee, Yun Bok P2-86Lee, Yun Bok P2-92Lee, Yun Bok P3-53Lee, Yun Bok P3-54Leroux, Thierry C27-1Li, Ao-Xiang P1-68Li, Cheng-Po P1-85Li, Dongsheng P3-49Li, Feng P1-105Li, Feng P1-108Li, Gang E13-4Li, Hongmin P3-105Li, Hongpeng P2-93LI, Huizi P3-105Li, Ji P3-54Li, Jian D12-2Li, Ke P1-16Li, Ke P1-17Li, Lin Song B2-2Li, Meng F54-2Li, Meng P3-129Li, Min P3-74Li, Min P3-113Li, Na P2-59

Li, Pengtao P3-18Li, Shipei P3-49Li, Weiguo B34-3Li, Weiguo P3-8Li, Wenyang P3-18Li, Wusheng E53-3Li, Wusheng P3-49Li, Xueyuan P1-100Li, Yan P1-19Li, Yang D36-3Li, Yilin F54-4Li, Yong D60-2Li, Yun G7-1Li, Zhaohan B2-2Liao, Chia-Te D52-4Liao, Hongen H32-2Liao, Liang-Sheng F54-2Liao, Liang-Sheng P3-131Liao, Ying-Chih P1-123Liaptsis, Geoergios A41-2Ligthart, A. A1-1Lim, Byung Cheon P2-61Lim, Byung-Cheon P1-68Lim, Byung-Cheon P3-39Lim, Byung-Cheon P3-48Lim, Byung-Cheon P3-52Lim, Han-Byul P1-3Lim, Ho P2-106Lim, Ho P3-109Lim, Hyoungcheol P2-125Lim, Jaehoon B2-3Lim, Jung Ah P1-88Lim, Jun-hyung P1-112Lim, Kimin A9-4Lim, Se Rin P2-29Lim, Seung-Won P1-3Lim, Sungjin H40-5Lim, Sungjin H56-3Lim, Sungjin H64-3Lim, Sungjin P3-102Lim, Tae Gil P1-78Lim, Yongjun P3-96Lim, Young Jin P2-107Lim, Young Jin P3-28Lim, Young-Ji P3-31Lim, Young-Woo F14-3Lim, Young-Woo P1-5Lim, Young-Woo P1-106Lim, Young-Woo P3-2Lim, Young-Woo P3-136Lin, Chien-Chung F46-1Lin, Hao-Wu D12-4Lin, Huizhe P2-86Lin, Jingyu D20-2Lin, Leng Chang P2-70Lin, Yen-Hung G55-1


Author Index

Lin, You-Cheng P1-86Lin, Yuhu C51-2Lin, Yu-Jhen C3-2Lin, Yunglun P2-99Lin, Zong-Hong C3-2Linge, Rouven A25-3Liu, Ao P2-18Liu, Ao P2-23Liu, Cheng-Kai P2-109Liu, Chenhui P3-122Liu, Chuan G23-3Liu, Chuan P2-17Liu, Jerry B26-2Liu, Jinliang P1-57Liu, Kai-jun P1-132Liu, Kai-Jun P3-70Liu, Kai-Jun P3-85Liu, Kai-Jun P3-87Liu, Lei P2-59Liu, Minggang P2-99Liu, Na P1-63Liu, Nan G39-2Liu, Rusheng P1-64Liu, Shengfang P1-100Liu, Shih-Bin D52-4Liu, Shuxin P1-19Liu, Tianzhen P3-57Liu, Xiaona P1-105Liu, Xiaona P1-108Liu, Xiaona P2-87Liu, Yali P1-16Liu, Yali P1-17Liu, Yingming P1-109Liu, Ze-Xu P3-48Liu, Ze-xu P3-52Liu, Zhaofan P3-51Liu, Zhaofan P3-60Liu, Zhaojun D28-2Liu, Zhen P1-132Liu, Zhen P3-70Liu, Zhen P3-85Liu, Zhen P3-87Liu, Zhi P2-54Liu, Zhi P3-59Long, Bin P3-18Long, Dang Xuan P2-28Long, Feng-Xiang P3-75Long, Feng-Xiang P3-87Lu, Chien C11-2Lu, Chih-Wen P2-65Lu, Kai P2-93Lu, Yifan D36-3Lu, York P1-132Lu, York P3-70Lu, York P3-74Lu, York P3-75

Lu, York P3-85Lu, York P3-87Lu, York P3-113Luan, Xinglong P3-49Ludemann, Aurelie A25-3Luo, Dan D60-2Luo, Hui D60-3Luscombe, Christine K. F54-4Lv, Fan A25-2Lv, Fengzhen P1-57Lv, Guoqiang H40-2Lv, Guoqiang H64-4Lv, Lei P1-104Lv, Yinchuan H16-4Lyu, Jae Jin P2-106Lyu, Jae Jin P3-109

M

Ma, Ji Yeon P3-37Ma, Juncai P3-53Ma, Qing P3-18Ma, Rui P1-57Ma, Rui P1-72Ma, Xiaoye P1-57Ma, XiTong P1-18Ma, Yu P1-105Ma, Yu P1-108Ma, Zhanjie P1-55Macdonald, J. Emyr F30-1Maeng, Ho Suk P2-63Maitlo, Nizamuddin D36-3Malinowski, Paweł E. A49-1Malinowski, Paweł E. P1-102Mamo, Melaku Dereje P1-69Manda, Ramesh P3-28Masaoka, Kenichiro C19-1Mason, Nadya H16-4Masuda, Yuki P3-95Mativenga, Mallory F30-3Matsuishi, Satoru G23-1Matsuo, Naoto G15-1Matsushima, Kyoji H64-1May, Falk A25-3McDaniel, Max A49-2McLean, John P1-95Mei, Jianguo C11-2Mensfoort, S.L.M. van A1-1Metzner, Christoph A49-4Mi, Lantian D36-3Miao, Zhou Chun P2-70Michaelis, Dirk A33-2Mikami, Akiyoshi A9-2


Author Index

Mikami, Moe P3-125Miles, Gareth A57-3Min, Byungseok P2-58Min, Sung-Wook H32-4Min, Tae Yup P2-86Min, Yu-Lim P1-81Minami, Daisuke B42-2Minemawari, Hiromi G39-1Miseli, Joe C27-2Mishima, Yasuyoshi C59-1Mishina, Tomoyuki H40-1Miyao, Masanobu G15-2Mizushina, Haruki H48-3Mizushina, Haruki H48-4Mizushina, Haruki H48-5Mizushina, Haruki P3-95Mo, Qiong-hua P1-132Mo, Qiong-Hua P3-70Mo, Qiong-Hua P3-87Moon, Chang-Ki A1-3Moon, Chang-Ki A17-3Moon, Chang-Ki F38-4Moon, Chang-Ki P2-123Moon, Cheol-Hee P3-13Moon, Cheol-Hee P3-14Moon, Dae-Gyu P1-79Moon, Dae-Gyu P3-66Moon, Hanul H24-3Moon, Hanul C59-4Moon, Hyun-Chan P1-92Moon, Jaehyun D4-3Moon, Jaehyun F14-3Moon, Jaehyun B58-3Moon, Jaehyun P1-94Moon, Jaehyun P2-111Moon, Jaehyun P3-1Moon, Ji Wook F6-4Moon, Jong-Won P1-68Moon, Jong-Won P3-39Moon, Jong-Won P3-48Moon, Jong-Won P3-52Moon, Kyoung Hwan P2-66Moon, Yi-Na P2-46Moraes, Kevin A49-2Morherr, Antonia A33-2Morimura, Taro G15-3Morimura, Taro G63-3Moriyama, Seigo G63-1Moro, Lorenza B34-2Morris, Stephen M. P2-109Morrison, Neil A49-2Morton, Andrew A57-3Motoyama, Sena P3-126Mukaeyama, Seishiro H48-4Mukish, Pars B10-4Mukish, Pars D20-1Mun, Seung-Hyun P2-15

Murawski, Caroline A57-2Murawski, Caroline A57-3Murphy, James B26-2Myny, Kris A49-1

N

Na, Jae Won G47-4Na, Jae Won P2-26Na, Jun-Hee P3-115Na, Liu P1-31Nahm, Ho-Hyun P1-59Nakamura, Atsushi A49-1Nakamura, Atsushi P1-102Nam, Eunhee P2-3Nam, Hyoungsik A1-4Nam, Hyoungsik P2-69Nam, Jeho P3-92Nam, Kyungah P1-116Nam, Kyungah P1-131Nam, Seung-Min D44-4Nam, Su Yong P1-128Naqi, Muhammad P1-27Nasrollahi, Aboozar D60-1Nasrollahi, Aboozar P2-106Nasrollahi, Aboozar P3-109Nelson, Clark B26-2Ng, Tse Nga P1-70Nguyen, Amanda C11-2Nguyen, Canh Tuan P3-67Nguyen, Nam Hoang C35-3Nguyen, Thang Phan P1-39Nguyen, Thanh Tien P2-19Nguyen, Trung P1-31Nikonov, S.Y. P2-121Ning, Zhijun P1-83Nishi, Shinichi C59-1Nishida, Shin’ya H32-3Nishikata, Osamu G63-3Nishikata, Yasushi G15-3Nishiumi, Nozomi H56-2Nketia-Yawson, Benjamin P1-54Nobeshima, Taiki C59-1Nogami, Asuka H48-3Noguchi, Takashi G15-3Noguchi, Takashi G15-4Noguchi, Takashi G63-3Noguchi, Takashi G63-4Noguchi, Takashi P1-67Noh, Yong-Young P1-45Noh, Yong-Young P1-52Noh, Yong-Young P1-54Noh, Yong-Young P1-66Noh, Yong-Young P1-69


Author Index

Noh, Yong-Young P2-18Noh, Yong-Young P2-20Noh, Yong-Young P2-23Noh, Yong-Young P2-27Noh, Yong-Young P2-28Nunan, Peter A49-2

O

Oda, O. F6-3Oguro, Yuki E13-1Oh, Chan-Hyoung P1-81Oh, Chun Rim P3-77Oh, Dong Ju P3-73Oh, Eunche P2-96Oh, Eunho P3-138Oh, Eunho P3-145Oh, Ha-gun P1-111Oh, Himchan P3-1Oh, Il-Kwon C11-1Oh, Jeung Ha P2-30Oh, Jinwon P1-120Oh, Jinwon P1-124Oh, Jong Su C35-4Oh, Jongsu P3-17Oh, Keun Chan P2-106Oh, Keun Chan P3-109Oh, Min Jeong P2-68Oh, Min Suk P3-36Oh, Min Suk P3-37Oh, Minjeong P2-100Oh, Minjeong P2-101Oh, Se Min P2-57Oh, Seung-Won D44-4Oh, Seung-Won D60-4Oh, Seung-Won P3-135Oh, Sihwa P3-115Oh, Soobin C11-3Oh, Sungkeun P1-12Ok, Kyung-Chul P2-35Okada, Hisashi A41-1Okada, Tatsuya G15-3Okada, Tatsuya G15-4Okada, Tatsuya G63-3Okada, Tatsuya G63-4Okada, Tatsuya P1-67Okaichi, Naoto H40-1Okamoto, Kyohei H48-5Okuyama, Fumio E13-1Okuyama, Tetsuo P1-67On, Nuri P2-42Ono, Masaru D36-2Onorato, Jonathan F54-4

Oostra, Doeke J. C51-3Ootake, Fumito P1-40Opoku, Henry P1-45Ota, Atsushi G15-3Ota, Atsushi G63-3Ozaki, Masanori D36-2

P

Pagidi, Srinivas P3-28Pan, Jun P1-83Panditha, Pradeep B34-1Pandya, Ashish P1-118Park, Boik P3-138Park, Chan Woo P1-24Park, Cheolmin F38-5Park, Cheolmin P1-121Park, Cheolmin P3-124Park, Da Eun P2-55Park, Dae Yong F62-3Park, Da-Young P1-79Park, Dongpil P1-15Park, Dongpil P2-141Park, Eun Young P2-94Park, Eun-Jae P2-35Park, Eun-Jae P2-45Park, Eunjung A9-4Park, Han Wool P1-117Park, Han Wool P2-129Park, Hea-Lim P3-9Park, Heekyeong P1-25Park, Hyun Woo P1-78Park, Hyunho P1-28Park, Hyunho P1-32Park, Ick-Joon P1-46Park, Jae Sung P2-58Park, Jae Yong P1-58Park, Jaehoon P3-20Park, Jaehoon P3-21Park, Jaehyeok F14-5Park, Jae-Hyeung E13-2Park, Jae-Hyeung H40-4Park, Jae-Man P1-35Park, Jae-Young P1-49Park, Jang-Sick P3-61Park, Jea-Gun P2-1Park, Jea-Gun P3-128Park, Jee Ho P2-52Park, Jeong Woo G55-3Park, Jeong Woo G55-5Park, Jeong Woo C59-2Park, Ji Hoon B50-3Park, Ji Won P2-58


Author Index

Park, Ji-Hoon P2-62Park, Jimin P3-107Park, Jin kyun P3-145Park, Jin Woo P1-48Park, Jin-Seong P2-35Park, Jin-Seong P2-45Park, Jin-Seong P3-30Park, JinSub P2-13Park, Jinwoo P1-34Park, Ji-Soo P1-80Park, Jiyong P2-72Park, Jiyong P2-73Park, Jiyong P2-74Park, Jiyong P2-75Park, Jiyong P2-76Park, Jiyong P2-77Park, Jong Gil P2-110Park, Jong Hyeok F54-1Park, Jong Kab E45-2Park, Jong Woon P2-53Park, Jonghwa P1-119Park, Jongjin A9-1Park, Jongwoo P1-93Park, Jongwoon P1-26Park, Jongwoon P1-96Park, Jongwoon P1-97Park, Joon Hui P2-49Park, Jun Hyeong P1-36Park, June Hyoung P3-32Park, Junekyun P1-6Park, Junekyun P1-14Park, Jung Hwan P3-47Park, Jungmin P3-71Park, Junkyun P2-10Park, Junsu P3-139Park, Kee Chan C35-4Park, KeeChan P3-17Park, Ku Hyun P1-107Park, Ku Hyun P2-86Park, Ku Hyun P3-54Park, Kwang Hun P2-117Park, Kwon-Shik P2-39Park, Kwon-Shik P2-52Park, Kyoung-Chan P3-137Park, Kyoungtea P1-122Park, Lee Soon P1-48Park, Lee Soon P1-128Park, Man Jae P3-78Park, Min-Ho C59-3Park, Min-Kyu P3-93Park, Minsik P3-104Park, Minyoung P3-101Park, Mi-Ri F46-3Park, Myeongkyu P3-82Park, Noh-Joon F46-3Park, Sang-Hee Ko P1-56

Park, Sang-Hee Ko P2-44Park, Sang-Hee Ko P2-50Park, Sang-Hee Ko P3-2Park, Sang-Hee Ko P3-80Park, Seongjae P1-93Park, Seo-Yeon P1-87Park, Seung Ho D20-4Park, Seungjun P2-69Park, Soocheol P3-82Park, So-Ra A1-4Park, Steve B58-2Park, Steve P1-113Park, Steve P1-120Park, Steve P1-124Park, Steve P1-125Park, Steve P1-127Park, Steve P1-130Park, Sun Ho C27-4Park, Sung Hoon P1-48Park, Sung Kyu G23-4Park, Sung Kyu P2-33Park, Sung Pyo H24-4Park, Sung Pyo P2-24Park, Sung Pyo P2-26Park, Sung Pyo P3-34Park, Sungjae P2-118Park, Sung-Jae P2-7Park, Sung-Jae P2-8Park, Sung-jae P2-131Park, Sung-Kyu G39-4Park, Suyoung P1-6Park, Tae Sang G63-5Park, Taehee F14-1Park, W. P2-108Park, Wan Woo P3-80Park, Wonhyeok P1-15Park, Won-Hyeok P2-7Park, Won-hyeok P2-138Park, Won-hyeok P2-139Park, Won-Hyeok P2-140Park, Won-hyeok P2-141Park, Won-Sang P1-122Park, Won-Tae P2-18Park, Won-Tae P2-27Park, Yong-In P2-62Park, Yongmin A9-1Park, Yongsup P2-122Park, Young Gil P1-82Park, Young Min E61-4Park, Young Seo P3-37Park, YoungGil P2-119Park, Younggil P3-69Park, Younggil P3-139Park, Young-Sam F14-3Park, Young-Sam B58-3Park, Young-Sam P1-94


Author Index

Park, Young-Shin B2-3Park, Yung Kyung C19-4Park, Yung Kyung P2-55Parthasarathy, Gautam B26-2Pawar, Pravin P3-127Pendyala, Raghu B34-1Peng, Jintao P3-49Perry, Robert B26-2Peruvemba, Sri C51-1Pflumm, Christof A25-3Pflumm, Christof A33-2Pham, Hien Thu F54-3Phun, Thanh Huy E61-3Pi, Jae-Eun G55-4Pi, Jae-Eun P3-1Piao, Yan-Ling H32-5Pociecha, Damian P2-85Pode, Ramchandra P2-128Poodt, Paul B34-1Prache, Olivier E5-2Prodanov, Maksym D12-3Prudnikov, Oleg N. G63-5Pulver, Stefan R. A57-3Pyeon, Jung Joon G23-5

Q

Qian, Jin A49-3Qiao, Guizhou B34-3Qin, Yifeng P2-93Qiu, Chengfeng D28-2Qiu, Jacky B34-4Qu, Bowen P3-54

R

Rahman, Md. Khalilur C11-3Ramesh, Manda P2-107Ready, Steve E53-1Reit, Radu B50-4Reit, Radu E53-4Rella, Avinash Kumar D60-1Rella, Avinash Kumar P2-106Rhee, Seunghyun P1-9Rho, Kyung Lae P1-51Richter, Bernd E5-1Rim, You Seung G55-2Rim, You Seung P2-29Rim, You Seung P2-45Rim, You Seung P2-49Ritter, Julian C43-3

Rodriguez, Lara-Isabel A25-3Roh, Heebum P1-8Roh, Seok Hwan P2-63Roh, Yonghan P1-6Roh, Yonghan P1-14Roh, Yonghan P2-10Ryu, Chung-Hyeon P2-35Ryu, Hee Jung P3-76Ryu, Hojun P2-78Ryu, Huije H8-3Ryu, Huije H16-4Ryu, Jaiil A49-3Ryu, S. H. P2-108Ryu, Seung Yoon P1-89Ryu, Seung Yoon P1-90Ryu, Seung Yoon P2-136Ryu, Seung Yoon P3-132

S

Saager, Stefan A49-4Sadlik, Bram C51-1Sadoh, Taizoh G15-2Saito, Ryosuke B42-2Sakai, Yoshiya A1-2Sakamoto, Yuji E13-1Sakamoto, Yuji H56-5Sakamoto, Yuji P3-94Salem, Ahmed B34-1Sang, Qi P1-105Sang, Qi P1-108Sargent, Edward H. F22-1Sasaki, Hisayuki H40-1Schmidt, Hennrik P2-44Schmidt, Maxim C43-2Schmidt, Maxim C43-3Schober, Matthias E5-1Schober, Matthias A49-4Schwambera, Markus E45-1Seki, Yusuke P2-84Sekine, M. F6-3Sekitani, Tsuyoshi C3-3Seo, Chang Woo E61-1Seo, Dong Hyeok D20-4Seo, Duck Min P1-128Seo, Eo Jin P3-111Seo, Hyunsang P1-82Seo, Jeong-Ho D36-4Seo, Jiseok P3-143Seo, Min-Kyo P2-105Seo, Seongho P2-16Seo, Young-Jun P2-55Seo, Young-Jun P2-56


Author Index

Seo, Young-Jun P2-57Seo, Yu Seok P1-96Seo, Yu Seok P1-97Seol, Ki-Hyuk P2-69Seol, Kisoo P3-104Setlur, Anant A. B26-2Seul, Hyeon Joo P2-39Seul, Hyeon Joo P2-40Shah, Ranjana E61-2Shang, Yuequn P1-83Shanker, Ravi P1-118shanker, Ravi P1-119Shao, Xian Jie P2-54Shao, Xianjie D60-3Shao, Xianjie P3-59Shao, Xianjie P3-105Shao, Xibin P1-103Shao, Xibin P2-59She, Yin Xin P2-70Sheen, Mi-Hyang P1-51Shen, Huaibin B2-2Shen, Qiyu P3-51Shen, Qiyu P3-60Sheng, Cuicui P1-64Shi, Bo P3-18Shi, Gaofei P3-51Shi, Gaofei P3-60Shi, Gaofei P3-105Shi, Genggongwo P1-48Shi, Genggongwo P1-128Shi, Liangyu D52-2Shi, Xiaodong P3-8Shi, Yue P2-92Shi, Yue P3-53Shibata, Yosei B42-2Shim, Jong-In P1-81Shimai, Ken Ji G63-4Shimizu, Takahisa A25-4Shimoi, Yukihiro G39-1Shin, Chan Soo P2-13Shin, Dae Yup A17-4Shin, Dae-Young P3-41Shin, Dong Kyun P2-53Shin, Dong Myung P2-88Shin, Dongkyun P1-26Shin, Dongkyun P1-96Shin, Dong-Soo P1-81Shin, Eul-Yong P2-20Shin, Eun Sol P1-66Shin, Eun-Sol P1-52Shin, Gyo Jic P1-47Shin, Gyo Jic P3-24Shin, Hyosup P1-84Shin, Hyun A17-3Shin, Hyun P2-125Shin, Hyunji P3-20Shin, Hyunji P3-21

Shin, Jae Min P1-36Shin, Jeong Bin P1-43Shin, Jin-Wook D4-3Shin, Jin-Wook A57-1Shin, Jong-Ho P3-81Shin, Jung Cheol P1-56Shin, Jung Cheol P2-50Shin, Jung Ho P3-47Shin, Jung Ho P3-134Shin, Jung-Cheol P2-44Shin, Jung-Chul F14-1Shin, M. J. P2-108Shin, Min Jeong P2-85Shin, Min Jeong P3-112Shin, Minjeong P2-105Shin, Samuel D12-2Shin, SeungMin P3-44Shin, SeungMin P3-45Shin, Sung Tae G63-5Shin, Sung Tae P2-95Shin, T. J. P2-108Shin, Tae Joo P2-4Shin, Uh-Ho P3-42Shiomoto, Ukyo A1-2Shirota, Koichiro D44-1Sim, Jaehyun P3-115Sohn, Sunyoung P2-117Son, Jangyup H16-4Soner, Burak E13-3Song, Gwang Sik P1-47Song, Gwang Sik P3-24Song, J. K. P2-131Song, Jang-Kun P2-7Song, Jang-Kun P2-8Song, Jang-Kun P3-119Song, Jie P3-51Song, Jie P3-60Song, Jinouk A33-1Song, Jinouk P2-134Song, Joon Yub P1-38Song, Juhee P2-78Song, Jung Hoon F54-3Song, Keun Kyu C35-2Song, Keunkyu P1-36Song, Keunkyu P3-72Song, Keunkyu P3-97Song, Min-Geun A33-3Song, Ok-Keun A41-4Song, Seok-Jeong P2-69Song, Seong Min P3-28Song, Seung Ho P3-35Song, Suk-Ho P2-7Song, Suk-Ho P2-8Song, Suk-ho P2-131Song, Tae Hwan D20-4Song, Wenshuai P2-59Song, Yong P2-89


Author Index

Song, Zhenkun P2-60Srivastava, A. K. D52-2Srivastava, Abhishek Kumar D12-3Steen, Jan-Laurens van der A49-1Steudel, Soeren A49-1Stößel, Philipp A25-3Su, Chun-Hao P1-123Su, Junning P3-8Su, Qiang B2-1Su, Shi-Jian A9-3Suh, Ahram P2-4Suh, Ahram P3-110Suh, Min Chul A1-4Suh, Min Chul P2-122Suh, Min Chul P2-124Sun, Baoquan P3-129Sun, Gaoming P2-60Sun, Jeong-Yun F30-2Sun, Jeong-Yun P1-35Sun, Jeoung-Yun P1-34Sun, Jian C51-4Sun, Jin Won A17-4Sun, Pei-Li C19-2Sun, Pengyu D4-2Sun, Qi P2-89Sun, Wei P1-104Sun, Xiao Wei B18-2Sun, Xiaowei D28-2Sun, Yujia P2-87Sung, Woo Jin P1-94Suyama, Shiro H48-3Suyama, Shiro H48-4Suyama, Shiro H48-5Suyama, Shiro P2-83Suyama, Shiro P3-95Swayamprabha, Sujith Sudheendran P2-127Swayamprabha, Sujith Sudheendran P2-137Sziklas, Laurie E5-2

T

Tabi, Grace Dansoa P1-54Tak, Young Jun H24-4Tak, Young Jun B42-1Tak, Young Jun G55-3Tak, Young Jun P2-24Tak, Young Jun P2-25Tak, Young Jun P2-47Takahashi, Kiyoshi P1-71Takaki, Yasuhiro H64-2Takano, Rui H48-4

Takaya, Tomotsugu P1-69Takei, Kuniharu H16-3Tanaka, Mutsuo G39-1Taniguchi, Takashi H16-4Tao, Hong P2-70Tao, Jian P3-105Tashiro, Masaharu P2-79Tashiro, Masaharu P2-81Tatum, Wesley F54-4Terashima, Yoshiki P2-83Thomas, K R Justin P1-91Thompson, Nicholas J. A17-1Tian, Bao P3-48Tian, Chunguang P1-105Tian, Chunguang P1-108Tian, Yi-Qun P3-75Tice, Kerry E5-2To, Jeffrey B.-H. C11-2To, John W.F. C11-2Tokieda, Daisuke P1-67Tropf, Laura A57-2Trung, Le Gia D60-1Trung, Le Gia P3-109Tsai, Min-Cheng P2-109Tsaiand, Yu-Tin D28-4Tsoi, Wing C. F54-2Tsuji, Shotaro P3-130Tsunoda, Isao G15-2Tsutumi, Y. F6-3Tsuzuki, Seiji G39-1Tuomikoski, Markus P1-95

U

Uemura, Sei C59-1Uemura, Takafumi C3-3Ueno, Kohei F46-2Ueno, Mitsuru P1-40Ulusoy, Erdem E13-3Um, Dooseung P1-119Um, Kiju B26-3Uraoka, Yukiharu P1-71Ürey, Hakan E13-3Ushijima, Hirobumi C59-1

V

Vandenplas, Erwin A49-1Vandenplas, Erwin P1-102Vashchenko, Valerii D12-3Vazan, Fridrich E5-2Velpen, Dieter Vander A49-1


Author Index

Velpen, Dieter Vander P1-102Vertegaal, Roel H24-1Vij, Jagdish K. D52-1Virey, Eric D20-1Visser, Robert J A49-2Vo, Tu Van C35-3Vogel, Uwe E5-1Vogel, Uwe A49-4Voges, Frank A25-3Vries, X. de A1-1

W

Wacyk, Ihor E5-2Wakayama, Yutaka G7-2Walba, D. M. P2-108Wan, Haiyan P3-8Wang, Bing D60-3Wang, Bing P3-59Wang, Chenru C51-4Wang, Chenru P1-16Wang, Chenru P1-17Wang, Chun P3-105Wang, Guangquan P1-104Wang, Hui D60-3wang, Hui P1-57Wang, Hui P2-54Wang, Hui P3-59Wang, Jieqiong P1-104Wang, Kai B18-2Wang, Kun P3-105Wang, Lei C51-4Wang, Li C51-2Wang, Lisen P3-53Wang, Lu A49-3Wang, Mengjie P2-87Wang, Po-Hsun F46-1Wang, Qi E5-2Wang, Qi B34-4Wang, Qiong-Hua H32-1Wang, Quanzhong P3-8Wang, Sheng P1-107Wang, Sheng P2-86Wang, Sheng P2-92Wang, Sheng P3-53Wang, Sheng P3-54Wang, Shichao P2-93Wang, Tao P3-52Wang, Wei P2-93Wang, Xiang P1-107Wang, Xidu C51-2Wang, Xudong P1-72Wang, Yan D60-3Wang, Yanan B18-1

Wang, Yijun P3-51Wang, Yijun P3-60Wang, Yijun P3-60Wang, Yiwei P3-122Wang, Zhao-Kui F54-2Wang, Zhao-Kui P3-129Wang, Zhao-Kui P3-131Wang, Zhibin B34-4Wang, Zi H40-2Wang, Zi H64-4Wang, Zifeng P3-8Wartenberg, Philipp E5-1Watanabe, Eiji H56-1Watanabe, Eiji H56-2Watanabe, Hayato H40-1Watanabe, Kenji H16-4Weaver, Michael S A17-1Wedel, Armin B10-3Wei, Bing-Yan D36-1Wei, Chen P3-55Wei, Chuang P1-18Wei, Shih-Han P1-123Wei, Wei P2-70Weijer, Peter van de B34-1Weixiong, Chen P3-56Wen, Min-Yu P1-123Wen, Na P1-105Wen, Na P1-108Wessling, Boerge E45-1Winkler, Jörg P2-44Winter, Suzanne de B34-1Won, Sang Hee P2-95Woo, Jaegun P3-67Woo, Jae-Hyeon D36-4Woo, Jae-Hyeon P2-90Woo, Jong-Ha P2-112Woo, Ju Young P1-43Woo, Seung-Je P2-135Woong, Kim P1-72Wrzesniewski, Ed E61-2Wu, Bo P3-18Wu, Chenchen P2-87Wu, Fangfang P1-72Wu, Huili P3-49Wu, Kaifeng B2-3Wu, Ruili B2-2Wu, Shin-Tson B18-1Wu, Zhenghui P1-70Wuu, Dong-Sing D28-4Wuu, Dong-Sing P1-85

X

Xia, Tianyu P1-105


Author Index

Xia, Tianyu P1-108Xiao, Lixin A25-2Xiao, Zhang P2-70Xie, Yongxian P1-57Xin, Li P3-55xin, Li P3-56Xin, Li P3-58Xin, Xiandong P3-122Xing, Hongyan P2-89Xing, Hongyan P2-89Xiong, Xiong P1-57Xu, Benzhi P2-61Xu, Binrui P2-5Xu, Chihao C43-2Xu, Chihao C43-3Xu, Dezhi P3-57Xu, Fei P1-104Xu, Guangwei D4-2Xu, Haifeng P1-72Xu, Huihua P2-17Xu, James P3-75Xu, Jinbo P2-92Xu, Kang P3-122Xu, Lin P1-64Xu, Rui C51-4Xu, Xinghua C43-1Xu, Xufei P3-51Xu, Xufei P3-60Xu, Yong P2-18Xu, Zhanqi P1-103Xuchen, Yuan P3-55Xuchen, Yuan P3-58Xue, Dapeng P3-49Xue, Wei P1-104

Y

Yadav, Rohit Ashok Kumar P1-91Yadav, Rohit Ashok Kumar P2-127Yadav, Rohit Ashok Kumar P2-137Yamada, Toshikazu G39-1Yamaguchi, Ibuki P3-91Yamaguchi, Kazuhiro P3-94Yamamoto, Hirotsugu H40-3Yamamoto, Hirotsugu P2-83Yamamoto, Hirotsugu P2-84Yamamoto, Hirotsugu P3-103Yanagida, Takeshi H8-2Yang, Bo-Ru (Paul) C51-2Yang, Byung-Choon P3-99Yang, Chang Duk P2-20Yang, Fan P3-8Yang, Feng-yun P1-132

Yang, Feng-Yun P3-70Yang, Feng-Yun P3-85Yang, Feng-Yun P3-87Yang, Hee-Sang P2-102Yang, Hee-Sang P2-103Yang, Hee-Sang P2-104Yang, Heesun P1-1Yang, Heesun P1-2Yang, Heesun P1-3Yang, Hye-Bin B26-3Yang, Hyun Ji P2-39Yang, Hyun Ji P2-42Yang, Jong-Heon D4-3Yang, Jong-Heon G55-4Yang, Jong-Heon A57-1Yang, Jun Chang P1-120Yang, Jun Chang P1-124Yang, Jun Chang P1-125Yang, Myoung-Su P3-38Yang, Po-Kang C3-2Yang, Quan P2-60Yang, Seung-Yeol P3-29Yang, Shu-Mei F46-1Yang, Sung Hoon P2-19Yang, Sung Yun P2-111Yang, Tae-hyeon P2-139Yang, Wan-Yun P1-91Yang, Weifan P2-59Yang, Yang D4-2Yang, Yingguo P3-129Yang, Ying-Guo F54-2Yang, YuSeok P2-120Yangheng, Li P3-58yanyan, Yin P3-56Yao, Qi E53-3Yao, Qi P3-49Yao, Yu P3-74Yao, Yu P3-113Yasugi, Masaki H56-1Yasugi, Masaki P3-103Ye, Yang P2-98Yeh, Wenchang G63-1Yeom, Ji Eun A33-3Yeom, Sooyoung P3-115Yeon, Ki Young P2-119Yi, Seungjun P3-44Yi, SeungJun P3-45Yi, Xin P2-54Yi, Xin P3-59Yi, Yeonjin B50-3Yi, Yeonjin A57-4Yi, Young-Jin P3-38Yim, Doo Ri P1-24Yim, Haena P2-38Yim, Junkyu H32-4Yim, Soo-Jung P3-121


Author Index

Yim, Sung Yeon P2-41Yin, Dongsheng P3-49Yin, Xiaobin P2-86Yin, Xiaobin P3-53Yin, Xiaobin P3-54Yin, Yanyan P2-89Yokoyama, Daisuke A1-2Yong, Sang Heon E45-4Yong, Song P3-55yong, Song P3-56Yong, Song P3-58Yong, Wan-fei P1-132Yoo, Bae Keun P2-41Yoo, Byung Wook P3-36Yoo, Byunghan P1-122Yoo, Chanhyung P3-138Yoo, Donggyun P1-92Yoo, Dongheon P1-21Yoo, Dongyoun P2-119Yoo, Geon Wook P3-37Yoo, Heemin P3-81Yoo, Hee-Sang P2-103Yoo, Hyesun P3-28Yoo, Hyuk Joon G55-3Yoo, Hyuk Joon G55-5Yoo, Hyuk Joon P2-25Yoo, Hyunjun P3-143Yoo, Jae Soo P1-78Yoo, Jang Jin A9-1Yoo, Jang Jin C27-4Yoo, Jewon P1-36Yoo, Jewon P2-118Yoo, Je-won P2-131Yoo, Seunghyup F14-3Yoo, Seunghyup F14-5Yoo, Seunghyup H24-3Yoo, Seunghyup A33-1Yoo, Seunghyup A57-1Yoo, Seunghyup C59-4Yoo, Seunghyup P2-134Yoo, Seung-Jun P2-125Yoo, Yong Hwan P1-80Yoo, Yong-Hwan F14-1Yoon, Bum-Jin P3-79Yoon, D. K. P2-108Yoon, Dai Geon B50-2Yoon, Dai Geon E61-4Yoon, Da-Som P2-102Yoon, Da-Som P2-103Yoon, Da-Som P2-104Yoon, DK P3-18Yoon, Dong Ki P2-4Yoon, Dong Ki P2-85Yoon, Dong Ki P2-105Yoon, Dong Ki P3-110Yoon, Dong Ki P3-112

Yoon, Do-Yeol P3-66Yoon, HoWon P3-44Yoon, Hyeong-ho P1-37Yoon, Hyungsoo P3-138Yoon, Hyungsoo P3-142Yoon, Hyungsoo P3-144Yoon, Ji Sun P1-28Yoon, Min Sung P2-82Yoon, MinSung P1-110Yoon, Minyoung P1-93Yoon, Seokgyu P1-84Yoon, Seung Deok P1-61Yoon, Seung Soo P1-42Yoon, Seung Soo P1-98Yoon, Soon-Gil P1-44Yoon, Sooyoung A9-1Yoon, Soo-Young P1-23Yoon, Soo-Young P2-52Yoon, Suk-Young P1-2Yoon, Sun Hong P1-28Yoon, Sun Hong P1-32Yoon, Sung-Uk P2-14Yoon, Tae-Hoon D36-4Yoon, Tae-Hoon D44-4Yoon, Tae-Hoon D60-4Yoon, Tae-Hoon D60-5Yoon, Tae-Hoon P2-90Yoon, Tae-Hoon P2-91Yoon, Tae-Hoon P3-135Yoon, Youngki P1-74Yoshida, Hiroyuki D36-2Yoshida, Manabu C59-1You, R. P2-108You, Ra P2-105You, Youngmin A17-2Youn, Yang Sik P3-57Yu, Bing D36-3Yu, Byounggon B58-3Yu, Byounggon P1-94Yu, Byoung-Soo P2-34Yu, Chang-Jae B42-3Yu, Chang-Jae P2-112Yu, Chang-Jae P2-113Yu, Chaozhi P3-53Yu, Chaozhi P3-54Yu, Chia-Min D52-4Yu, Jae-Ho P3-99Yu, Jaehyung H16-4Yu, Jae-Woong P1-101Yu, Jae-Woong P3-121Yu, Jeong-Seon P2-94Yu, Jie P3-18Yu, Ki Jun H16-2Yu, Sanghyuck G47-2Yu, Ting-Feng P2-31Yu, Wanggun F14-1


Author Index

Yuan, Bo P1-64Yuan, Guangcai A49-3Yuan, Guangcai E53-3Yuan, Guangcai P3-49Yuan, Jianfeng P2-86Yuan, Miao P3-51Yuan, Miao P3-60Yuan, Shuai P2-87Yun, Changhun F14-4Yun, Changhun P1-75Yun, E. -J. G23-2Yun, Geum Jae P1-98Yun, Han-Jun P3-13Yun, Han-Jun P3-14Yun, Hui P2-72Yun, Hui P2-73Yun, Hui P2-74Yun, Hui P2-75Yun, Hui P2-76Yun, Hui P2-77Yun, Hyeong Jin B2-3Yun, Inyeol P1-29Yun, Jang Won P1-50Yun, Ju Hui P2-132Yun, JuHui P2-114Yun, Pil Sang P2-39

Z

Zakharko, Yuriy A57-2Zande, Arend van der H16-4Zang, Jianfeng C3-1Zang, Yuansheng P3-105Zaumseil, Jana A57-2Zeng, Ting P1-103Zeng, Xi C51-2Zhan, Jianying P3-51Zhan, Jianying P3-60Zhang, Baoku P3-122Zhang, Caicai B18-1Zhang, Guan-Yong P1-68Zhang, Han-Le H32-1Zhang, Hao P1-16Zhang, Hao P1-17Zhang, Heng B2-1Zhang, Ji P1-68Zhang, Ji P3-39Zhang, Jinfeng P1-72Zhang, Jiuzhan P1-55Zhang, Jun P3-51Zhang, Jun P3-60Zhang, June B34-2Zhang, Ke D28-2

Zhang, Miao P1-57Zhang, Ming P1-103Zhang, Mingwei P1-104zhang, Ran P1-57Zhang, Rui P2-87Zhang, Shunhang P3-49Zhang, Wei P2-61Zhang, Wenbo D36-3Zhang, Xiao P1-18Zhang, Xiaotong P2-61Zhang, Xu H64-4Zhang, Xuebing P1-16Zhang, Xuebing P1-17Zhang, Xuena A49-2Zhang, Yuan P2-59Zhang, Zhen P1-107Zhang, Zhen P3-54Zhang, Zhihai P3-57Zhang, Zhipeng P3-18Zhao, Chao F54-2Zhao, Dejiang A49-3Zhao, Na P3-51Zhao, Na P3-51Zhao, Na P3-57Zhao, Na P3-60Zhao, Ni P2-17Zhao, Xiaoyan P2-89Zheng, Mindong P1-57Zheng, Zijian H16-1Zheng, Ziyi P2-87Zhou, Jeff P3-75Zhou, Jeff P3-87Zhou, Pengcheng P1-19Zhou, Ru P3-51Zhou, Ru P3-60Zhou, Yongshan P2-93Zhu, Bowen D4-2Zhu, Hui P1-55Zhu, Huihui P2-18Zhu, Huihui P2-23Zhu, Jiuyang P1-104Zhu, Ping P1-100Zhu, Shengzu B34-3Zhu, Xiujian P1-55Zhu, Zhengwei P1-107Zhu, Zhengwei P3-54Zhu, Zhiqiang D12-2Zong, Lei P3-122Zou, Jiabin P1-105Zou, Jiabin P1-108Zou, Zehua P3-122


IDW '18

The 25th International Display Workshops

Dec. 12 – 14, 2018

Nagoya Congress Center Nagoya, Japan

http://www.idw.or.jp/

final program book - imid.or.kr · minho sohn, vp, marketing udc: mike hack , vp, business...

Documents