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    1NCNINAC

    2006 Summer Undergraduate

    Research Internship Program

    Surface Analysis of Organic

    Monolayers using FTIR and XPS

    Michael Toole

    Jamie Nipple

    Advisor: Professor David JanesGraduate Mentors: Patrick Carpenter

    Adina Scott

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    Presentation Outline

    Introduction to Self-Assembled Monolayers (SAMs)

    Introduction to Surface Analysis (FTIR/XPS)

    Applications of SAMs

    Method #1: Solution Immersion

    Method #2: Molecular Self-Assembly

    Method #3: Electrochemical Reduction

    Summary of Findings

    Future Outlook

    Questions

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    Self-Assembled Monolayers

    Single layer of molecules

    Form spontaneouslyWell-defined structure

    Covalently bonded

    Bound to metal (Au, Ag, Cu) or

    semiconductor (GaAs, Si)

    substrate

    Introduction: Organic Monolayers

    Metal

    Metal

    Metal Semiconductor

    Semiconductor

    Semiconductor

    GaAs (100) Substrate

    Alkanethiol molecules (-SH)

    Form S-As covalent bond

    Si (111) Substrate

    Benzene molecules (-C6H12)

    Form Si-C covalent bond

    Graphics Source: Patrick Carpenter

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    Fabrication Techniques

    Preparation TechniquesMolten Deposition

    Melt alkanethiols to 100-200 C

    Deposit onto GaAs substrate

    Relatively effective

    Not usable on all alkanethiols

    Solution Immersion

    Etch substrate with HCLRinse with DI H2O

    Deposit substrate into solution

    Dry on hotplate (~8 hours)

    Activated NH4OH Immersion

    Similar to solution immersion

    Etch with NH4OH

    Allow to purge for 20 hours at

    room temperature

    Electrochemical Reduction

    Reduce aryl diazonium salts(C6N2BF4) on Si

    Causes a radical reaction

    Useful for benzene monolayers

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    Contacting Techniques

    Semiconductor

    Metal

    Ar backfill evaporation

    GaAs substrate

    GaAs substrate

    Room Temp. (300 K) e-beam

    evaporation

    GaAs substrate

    Cold (77 K) e-beam

    evaporation

    Decreasing

    MetalPenetra

    tion

    Purpose: Creation on nanoscale transistorsProblems: Metal penetration

    Contacting Techniques

    Basic Principles:

    Face substrate away from metal

    Heat metal until reaches gaseous phase

    Hot metal reaches substrate and is deposited

    Standard (300K): Pressure in chamber pumped

    down to 10-7 Torr and then sample deposited

    Cold (77K): Sample cooled with liquid nitrogen

    and slowly deposited

    Ar Backfill: Backfilled with Ar gas to slow KEGraphics Source: Patrick Carpenter

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    Surface Analysis Techniques

    Scanning Electron Microscopy (SEM) Topography

    Morphology

    Composition Atomic arrangement

    Auger Electron Spectroscopy (AES)

    Elemental composition and concentration Mapping of elements

    Depth-profiling

    Ellipsometry Layer thickness

    Composition

    Topography

    Optical constants

    http://www3.interscience.wiley.com/cgi-bin/fulltext/76509302/PDFSTART

    www.mate.calpoly.edu/.../images/aesimage.jpg

    http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=RSINAK00006700000800293000

    0001&idtype=cvips&prog=normal

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    Surface Analysis: XPS

    Uses photons (soft x-rays 200-2000 eV) to remove core electrons fromsample = Photoemission

    Produces photoelectron spectrum by

    measuring the kinetic energy distribution

    of emitted photoelectrons

    Differences between the ionized electron

    and neutral electron = Binding energy (BE)

    which is direct measure of energy required to

    remove concerned electron

    Determines elemental concentration and

    electronic state of sample surface

    Images by Dmitry Zemlyanov (Purdue University)

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    Surface Analysis: XPS

    Binding energy is dependent on:

    Level at which photoemission is occurring

    Formal oxidation state of the atom

    Local and chemical environment

    * A change in the oxidation state or the environment will result in a

    chemical shift

    Other XPS capabilities

    cosdd

    h

    cosdd

    Depth-profiling

    cosd

    3=dh

    cosd

    3=d

    Angle Resolved XPS X-Y Mapping

    Images by Dmitry Zemlyanov (Purdue University)

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    Surface Analysis: FTIR

    = dkekGIxIxW ikx)(2

    1

    2

    )0()(2)(

    Images by http://spectroscopy.lbl.gov/FTIR-Martin/FTIR-

    Martin_files/frame.htm

    Basic Principle

    Fire IR-rays at sample

    Atoms (Bonds) within sample vibrate with specified frequencies

    Uses of FTIR

    Chemical Analysis

    Match to known spectra

    Match chemical groups

    Electronic Information

    Measure optical

    conductivity

    Determine whether metal,

    insulator, superconductor,

    semiconductor

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    Applications of SAMs

    Biological Sensors

    Biosensing system based on molecular recognition

    Electrochemistry Sensors use monolayers to impart selectivity onto an electrode Monitors pH, inorganic species, and organic molecules

    Molecular Electronics

    Nanoscale insulators and dielectrics Molecular switches

    Rectifiers

    Field effect transistors

    http://www.coe.waseda.ac.jp/osaka/B-e.html

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    Research Purpose Statement

    Use XPS and FTIR to characterize the surface of

    samples fabricated using three different

    techniques

    Analyze the results to determine elemental

    composition, percent oxidation, and atomicbonding

    Determine the effectiveness of each fabrication

    technique

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    Deposition Method #1:

    Solution Immersion

    Native oxide etchwith HCL

    Addition of

    NH4OH,deposit

    sample, dry

    on hotplate

    Substrate: GaAs (100)Organic Molecule: 1-Octadecanethiol (ODT)

    Covalent Bond: S-As

    Procedure:

    1) Oxide etched from GaAs using 1:9 HCL:DI solution

    2) 5 mM molecule prepared, 5% (by volume) of 30%

    NH4OH was added for continuing etching3) Substrate then submerged into solution

    4) Samples then purged with N2 gas for 1 minute

    5) Samples dried on 50 hotplate for 8 hours6) Samples rinsed with ethanol after drying

    7) Sample re-dried with N2 gas

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    Solution Immersion:

    FTIR Analysis

    Peaks Present

    CH2 peak (2917.51 cm-1

    )CH2 peak (2849.68 cm

    -1)

    CH3 peak (2958.60 cm-1)

    Indicates

    Fairly well ordered

    monolayer as shown by

    semi-sharp peaks and

    lower wavenumbers

    ODT

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    Deposition Method #2:

    Molecular Self-Assembly

    Native oxide etchwith NH4OH

    Addition of

    NH4OH,

    deposit

    sample, dry

    at room

    temperature

    Substrate: GaAs (100)Organic Molecule: 1-Octadecanethiol (ODT) and XYL

    Covalent Bond: S-As

    Procedure:

    1) Oxide etched from GaAs using NH4OH

    2) 5 mM molecule prepared, 5% (by volume) of 30%

    NH4OH was added for continuing etching

    3) Substrate then submerged into solution

    4) Samples then purged with N2 gas for 1 minute

    5) Samples dried at room temperature for 20 hours6) Samples rinsed with ethanol after drying

    7) Sample re-dried with N2 gas

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    Molecular Self-Assembly:

    FTIR Analysis

    ODT

    Octadecanethiol

    Expected: C-H3 Stretch ~2850-3000cm-1

    C-H2 Stretch ~1465cm-1

    Peak present at 2917.17cm-1, 2849.73cm-1

    Peaks indicates successful monolayer formationSharp peaks indicate highly ordered monolayer

    2006 S U d d

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    Molecular Self-Assembly:

    FTIR Analysis

    Expanded Spectrum

    XYL

    Expected: C-H3 Stretch ~2850-3000cm-1

    C-H2 Stretch ~1465cm-1

    Peak present at 2895.26cm-1, 2849.59cm-1

    Peaks indicates successful monolayer formation

    Semi-Sharp peaks indicate semi-ordered monolayer

    XYL

    2006 S U d d t

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    Molecular Self-Assembly:

    Contacting with Au

    Indirect Evaporation Procedure

    1) Substrate is faced away from

    metallic source and cooled2) Argon is backfilled into the

    chamber during deposition

    3) Metallic Au is heated

    4) Argon slows the kinetic energy of

    evaporated Au particles

    5) Reduced kinetic energy results in

    a lower quantity of penetration6) A thin layer of Au is evaporated

    on the ODT organic monolayer

    Graphics Source: Patrick Carpenter

    2006 S U d g d t

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    Molecular Self-Assembly:

    Contacted FTIR Analysis

    ODT - AuExpanded Spectrum

    Octadecanethiol contacted with Au

    Expected: C-H3 Stretch ~2850-3000cm-1

    C-H2 Stretch ~1465cm-1

    Peak present at 2915.22cm-1, 2848.32cm-1

    Correlates to peaks at 2917.17cm-1, 2849.73cm-1

    Indicates successful monolayer formationIndicates successful contact with Au

    S-H

    MolecularStructure

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    Deposition Method #3:

    Electrochemical Reduction

    Electrochemical reduction of aryl diazonium salts

    (C6N2BF4) on Si(111) by promoting a radical reaction

    P. Allongue et al. / Journal of Electroanalytical

    Chemistry 550/551 (2003) 161/174

    CH3

    O

    Silicon Substrate

    Methoxybenzene MB

    Br

    Silicon Substrate

    Bromobenzene BB

    Nitrobenzene NB

    O O

    N

    Silicon Substrate

    2006 Summer Undergraduate El h i l D i i

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    Electrochemical Deposition:

    XPS Analysis

    O1s

    C1s

    N1s

    F1s

    Br3p

    Si2p

    800 600 400 200 0Binding Energy (eV)

    NameO 1sC 1sN 1sF 1s

    Br 3pSi 2p

    Pos.533285400687

    184100

    FWHM3.067082.807373.196432.94095

    3.806322.48349

    Area8831.5

    26758.31254.1412.9

    17167.910863.7

    At%6.38

    56.601.470.20

    7.2228.13

    BB WideO1s

    C1s

    N1s

    F1s

    Si2p

    600 400 200Binding Energy (eV)

    NameO 1sC 1s

    N 1s

    F 1sSi 2p

    Pos.533286406

    687100

    FWHM2.911253.133133.06303

    3.1542.54496

    Area23154.020026.44163.0

    909.716079.8

    At%15.7639.954.61

    0.4139.26

    NB Wide MB Wide

    O1s

    C1s

    N1s

    Si2p

    600 400 200 0Binding Energy (eV)

    NameO 1sC 1s

    N 1sSi 2p

    Pos.533285400100

    FWHM3.090623.316143.231622.49079

    Area18332.924542.71129.4

    14042.9

    At%12.8750.481.29

    35.36

    2006 Summer Undergraduate El t h i l D iti

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    Electrochemical Deposition:

    XPS Analysis

    Expanded view of Si 2p

    Wide

    None

    x10

    10

    20

    30

    40

    50

    60

    70

    CPS

    108 106 104 102 100 98 96Binding Energy (eV)

    Nitrobenzene Bromobenzene Methoxybenzene

    WideNone

    5

    10

    15

    20

    25

    30

    35

    40

    45

    50

    55

    CPS

    108 106 104 102 100 98 96Binding Energy (eV)

    Wid

    eNone

    10

    20

    30

    40

    50

    60

    CPS

    108 106 104 102 100 98 96Binding Energy (eV)

    2p Ox

    2p 1/2

    2p 3/2

    2p Ox

    2p 1/2

    2p 3/2

    2p Ox

    2p 1/2

    2p 3/2

    2p 1/2: spin-orbit splitting (teal)

    2p 3/2: spin-orbit splitting (purple)

    2p Ox: sample oxidation (red)

    2006 Summer Undergraduate Electrochemical Deposition:

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    Electrochemical Deposition:

    XPS Analysis

    Sample Oxidation

    BB Position %Conc.

    Si 2p 1/2 100.1 39.89

    Si 2p 3/2 99.5 53.01

    Si 2p Ox 102.7 7.10

    MB Position % Conc.

    Si 2p 1/2 101.1 59.31

    Si 2p 3/2 99.6 34.29

    Si 2p Ox 103.0 6.40

    NB Position % Conc.

    Si 2p 1/2 101.1 45.29

    Si 2p 3/2 99.5 43.75

    Si 2p Ox 103.6 10.96

    Surface Oxidation: 4.3% Surface Oxidation: 1.99% Surface Oxidation: 2.26%

    2006 Summer Undergraduate Electrochemical Reduction:

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    Electrochemical Reduction:

    XPS Analysis

    Surface Characterization:Depth Information

    NB % Si 2p Ox

    % Si 2p

    +1 d BB % Si 2p Ox % Si 2p+1 d MB % Si 2p Ox % Si 2p+1 d

    0 4.3 35.96 65.6 1.99 27.14 80.71 2.26 34.1 83.83

    -30.06 4.88 35.38 13.05 2.02 27.11 17.1 1.88 34.49 19.16

    -45 5.59 34.67 29.61 3.17 24.96 34.12 3.52 32.84 36.23

    -59.94 7.27 32.99 45.27 4.59 24.54 48.85 4.01 32.35 62.49

    -75.06 11.11 29.15 28.1086 4.7 24.43 48.03 4.86 31.5 54.46

    cosexp10

    dNNelastic

    =

    Graph is not linear:

    Islands of oxidation on

    sample surface

    NB

    0

    10

    20

    30

    40

    50

    60

    70

    0 1 2 3 4 5 6

    Series1

    2006 Summer Undergraduate Electrochemical Deposition:

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    Electrochemical Deposition:

    FTIR Analysis

    Bromobenzene

    Br

    Silicon Substrate

    Bromobenzene

    Expexted: C-Br peak ~560-620cm-1

    Aromatic =CH2 ~2950-3050cm-1

    Aromatic C=C ~1475-1600cm-1

    Peak present at 1055.91cm-1

    Indicates oxidation of substrate

    No conclusive monolayer formation

    Expanded Spectrum

    MolecularStructure

    2006 Summer Undergraduate Electrochemical Deposition:

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    Electrochemical Deposition:

    FTIR Analysis

    MethoxybenzeneCH3

    O

    Silicon Substrate

    Methoxybenzene

    Expected: OCH3 ~2900-3000cm-1

    Aromatic C=C ~1475-1600cm-1

    Peak present at 1105.08 cm-1

    Indicates oxidation of substrate

    Peaks present at 2936.45, 2927.08, 2916.24cm-1

    Indicates successful monolayer formation

    Expanded Spectrum

    2006 Summer Undergraduate Electrochemical Deposition:

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    Electrochemical Deposition:

    FTIR Analysis

    O O

    N

    CH3

    Silicon Substrate

    2-Methyl-4-

    Nitrobenzene

    2-Methyl-4-Nitrobenzene

    Expected: N-O2 peak ~1460cm-1

    Amine N-H2 peak ~1350cm-1

    Peak present at 1105.98cm-1

    Indicates oxidation of substrate

    No other peaks present

    No conclusive monolayer formation

    Expanded Spectrum

    2006 Summer Undergraduate Electrochemical Deposition:

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    Electrochemical Deposition:

    FTIR Analysis

    O O

    N

    Silicon Substrate

    NitrobenzeneExpanded Spectrum

    Nitrobenzene

    Expected: N-O2 peak ~1460cm-1

    Amine N-H2 peak ~1350cm-1

    Peak present at 1105.96cm-1 (Oxidation)

    Peaks present at 2957.85, 2908.06cm-1

    Indicates semi-successful monolayer formation

    Broad peaks indicate unordered or multiple layers

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    Summary of Results

    Solution immersion and self-assembly method wereboth effective in monolayer formation

    Self-assembly method with NH4OH is more effective

    for monolayer formation upon GaAs (100) as shown by

    peak intensity

    Contacting molecule with Au resulted in a highly-

    ordered, low-penetrated compound when using self-

    assembly method

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    Summary of Results

    FTIR of nitrobenzene and methoxybenzene indicate semi-successful monolayer formation on Si (111), although multiple

    layers may have been present on nitrobenzene

    FTIR of bromobenzene and 2-methyl-4-nitrobenzene indicate

    no indication of successful monolayer formation on Si (111)

    XPS results indicate successful monolayer formation of all the

    functional groups tested

    XPS indicate show ~2-4% oxidation upon substrates when

    using the electrochemical reduction method, often in islands

    2006 Summer UndergraduateFuture Outlook of SAMs

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    Future Outlook of SAMs

    Extension of two-dimensional capabilities intothree dimensions Carbon nanotubes

    Nanoparticles Dendrimers

    Molecular wires

    Molecular level control of integrated molecular systemswill result in useful nanodevices

    Concern Long-term stability and robustness of alkanethiol chemistry

    Research possible systems with more robust bonds or use new alkylchains

    Functional device yield

    www.ewels.info nanobot.blogspot.com www.cdtltd.co.uk www.physics.purdue.edu

    2006 Summer UndergraduateAcknowledgements

    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bnw=101&prev=/images%3Fq%3Dnanoparticle%26svnum%3D10%26hl%3Den%26lr%3Dhttp://images.google.com/imgres?imgurl=http://www.ewels.info/img/science/nanotubes/tube.angled.jpg&imgrefurl=http://www.ewels.info/img/science/nano.html&h=607&w=360&sz=26&hl=en&start=2&tbnid=EDw1usn1kdJ-oM:&tbnh=136&tbnw=81&prev=/images%3Fq%3Dcarbon%2Bnanotubes%26svnum%3D10%26hl%3Den%26lr%3D%26sa%3DG
  • 7/21/2019 Final Suri Presentation

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    Research Internship Program

    31NCNINAC

    Acknowledgements

    A special thanks to

    NASA INAC

    SURI 2006

    Purdue University

    Professor David Janes

    Patrick Carpenter and Adina Scott

    2006 Summer UndergraduateAny Questions?

  • 7/21/2019 Final Suri Presentation

    32/32

    Research Internship Program

    32NCNINAC

    Any Questions?