flcc march 28, 2005 flcc - plasma 1 fluid modeling of capacitive plasma tools flcc presentation...

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March 28, 2005 FLCC - Plasma 1 FLCC Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode, and Yassine Kabouzi UC Berkeley

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Page 1: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

March 28, 2005 FLCC - Plasma

1

FLCC

Fluid Modeling of Capacitive Plasma Tools

FLCC PresentationMarch 28, 2005Berkeley, CA

David B. Graves, Mark Nierode, and Yassine KabouziUC Berkeley

Page 2: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

March 28, 2005 FLCC - Plasma

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Motivation• Capacitively-coupled plasma etch tools commonly

used, especially in dielectric etch• Popular strategy: dual frequency operation to separate

control of ion flux and plasma density (high frequency) from ion energy control (low frequency)

• Overall goal is to develop a 2-D, time-dependent fluid plasma model that can be used for tool design and process control studies

• Tool-scale model can be coupled to feature scale (e.g. Prof. Chang, UCLA)

• Fluid model can complement PIC/MC model (Prof. Lieberman, UCB)

Page 3: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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1. Fluid model of 1-D dual frequency (27 MHz, 2 MHz) Ar discharge.

2. Fluid model of 2-D single frequency (13.5 MHz) Ar discharge.

3. Fluid model of non-isothermal, reacting neutral flow in typical industrial capacitive etch tool with split inlet flows.

Today’s Talk

Page 4: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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Plasma Model Equations

( )ee ioniz ioniz e e N

nR k T n n

t

Γ

iiiiiii

ii enZpt

mn MEuuu

eabseeee EPekTnt

ΓEQ

2

3

iiie nZne 2

0

biasVtV )sin(

AJJJdt

dVc die

biasb

ene

eee

enee m

enkTn

m

1

eene

eeeee kT

vm

kTnkT

2

5

2

5ΓQ

ii i ioniz

nn R

t

u

Equations solved via FEMLAB

Page 5: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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One Dimensional Dual Frequency Results

Argon, p = 50 mtorr, 800 V rf @ 27 MHz, , 800 V rf @ 2 MHz applied at left electrode

2 MHz

27 MHz

0.02 m

Page 6: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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FLCC

Potential on Powered (Left) Electrode

Argon, p = 50 mtorr, 800 V rf @ 27 MHz, , 800 V rf @ 2 MHz applied at left electrode

0.5

Page 7: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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Dual Frequency Results: Plasma Density

Argon, p = 50 mtorr, 800 V rf @ 27 MHz, , 800 V rf @ 2 MHz applied at left electrode

Page 8: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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Right Sheath Structure

Page 9: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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Left Sheath Structure

Page 10: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

March 28, 2005 FLCC - Plasma

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FLCC

Electron Density in Sheaths: 27 MHz Variation

Electron loss at both sheaths

Electron loss at right sheath only

Page 11: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

March 28, 2005 FLCC - Plasma

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FLCC

Electric Field and Plasma Potential: 2 MHz

Page 12: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

March 28, 2005 FLCC - Plasma

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FLCC

Potentials on Powered Electrode and in Plasma

Page 13: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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FLCC

Currents at Powered Electrode

Page 14: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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Electron Temperature

Page 15: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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Two-Dimensional, Axisymmetric (r,z) Single Frequency

Argon, p = 50 mtorr, 80 V rf @ 13.56 MHz, applied at top electrode

0.25 m radius

0.025 m height

Powered electrode

Grounded

Preliminary 2-D results obtained

Page 16: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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Period-Averaged Electron DensityArgon, p = 50 mtorr, 80 V rf @ 13.56 MHz, applied at top electrode

Page 17: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

March 28, 2005 FLCC - Plasma

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Period-Averaged Electron Temperature

Argon, p = 50 mtorr, 80 V rf @ 13.56 MHz, applied at top electrode

Page 18: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

March 28, 2005 FLCC - Plasma

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FLCC

Period-Averaged Ion DensityArgon, p = 50 mtorr, 80 V rf @ 13.56 MHz, applied at top electrode

Page 19: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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Period-Averaged Plasma Potential

Page 20: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

March 28, 2005 FLCC - Plasma

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FLCC

Neutral Reacting Flow Model

nvv EpTCt

TC

v:vqv

nRt

v

npt

Mτvvv

iiii rt

imDv

pM

kT

Equations solved via FEMLAB

Page 21: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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Neutral Flow Configuration

– Commercial tools typically feature dual flow configurations to allow for greater process control

(e.g. balance fluorocarbon deposition and etching)– Investigate the transport of the tuning gas and its effect on

reactor chemistry

400/20/9 sccm Ar/c-C4F8/O2 | 0-100 sccm O2

Pressure ~ 30 mtorr

Page 22: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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Mesh and Numerics

• 3363 elements, 115106 d.o.f.• All variables use quadratic Lagrangian elements

except pressure which is linear• Steady state solution obtained 1-2 hours using

iteration script (FEMALB feature; eqns solved iteratively and sequentially)

Page 23: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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Chemistry ModelREACTIONS

1 Ar + e --> Ar+ + 2e2 c-C4F8 + e --> 2 C2F4 + e3 C2F4 + e --> 2 CF2 + e4 CF2 + e --> CF + F + e5 O2 + e --> 2 O + e6 CF2 + O --> COF + F7 COF + O --> CO2 + F

Assum ed plasm a density , tem peratureNo surface react ions

1. Simplistic model will assume CF as the ‘depositing’ species and F as the ‘etching’ species

2. Increased O2 flow in the outer annulus leads to increased O2 and O in the outer region

3. Increased O increases rxns 6 & 7 producing F on the same order as rxn 4

Page 24: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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Assumed Plasma Density

Assume constant Te = 3

Assume radial plasma profile flat except when r > 0.2

Page 25: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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Neutral Temperature

• Neutral gas heating is proportional to the (assumed) plasma density

• ‘Jump’ temperature and ‘slip’ velocity boundary conditions

• Temperature profile not affected by outer tuning flow up to 100 sccm O2

Page 26: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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Pressure and Temperature Effects

• Radial pressure drop is significant ~30% leading to a similar neutral number density profile (n); recall n ~ p/T

• Axial pressure gradients are minimal

Total neutral density

Page 27: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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Neutral Species Radial ProfilesQtune = 0 sccm

Page 28: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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Neutral Species Radial Profiles

– Note: scale different from previous slide

Qtune = 100 sccm

Page 29: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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Effects of Altering O2 ‘Tuning’ Gas Flow

•Propose CF/F as model deposition/etch ratio index•Varying the outer O2 flow (Qtune) the ratio of CF to F can be modified radially although the overall ratio of CF to F changes too

Page 30: FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

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Concluding Remarks

• FEMLAB-based fluid modeling powerful tool to simulate complex, multi-dimensional, reacting plasma tools– Tool-scale design/analysis possible

– Fully transient, coupled neutral-plasma versions can simulate process control

• Two major limitations to tool-scale fluid models:– No feature profile evolution

– No plasma kinetic information (e.g. EEDF, IEDF, IADF)

• FLCC plasma project couples fluid modeling (DBG, UCB), feature evolution modeling (JC, UCLA) and PIC/MC modeling (MAL, UCB)