FUJI POWER SEMICONDUCTORS IGBT-IPM R-SERIES APPLICATION MANUAL

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CONTENTSChapter 1 Features 1.1 IGBT-IPM Characteristics........................................................................ 3 1.2 R-IPM Characteristics.............................................................................. 4 1.3 Definition of Type Name and Lot No........................................................ 4 1.4 R-IPM Line Up......................................................................................... 5 Chapter 2 Explanation of Symbols/Terminology 2.1 Symbols in Block Diagram....................................................................... 6 2.2 Technical Terms and Definitions ............................................................. 7 Chapter 3 Explanation of Functions 3.1 Built-in Electric Functions ...................................................................... 12 3.2 Explanation of Functions ....................................................................... 12 3.3 Timing chart........................................................................................... 17 Chapter 4 Examples of Application Circuits 4.1 The Entire Circuit................................................................................... 19 4.2 Precautions ........................................................................................... 19 4.3 The Opto-couplers................................................................................. 20 4.4 Connector.............................................................................................. 20 Chapter 5 Cooling Design 5.1 Junction Temperature............................................................................ 21 5.2 Precautions for Heat Sink Selection ...................................................... 21 Chapter 6 Precautions Using R-IPM 6.1 Main Power Source Vd.......................................................................... 22 6.2 Control Power Source Vcc .................................................................... 22 6.3 Protection Operation.............................................................................. 23 6.4 Reliability ............................................................................................... 25 6.5 Others.................................................................................................... 25

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Chapter 1 Features1.1 IGBT-IPM CharacteristicsThe intelligent power module (IPM) has the following characteristics when compared with the combination of the conventional IGBT modules and drive circuits. 1.1.1 Built-in drive circuit - IGBT gate drives operate under optimal conditions. - Since the wiring length between the internal drive circuit and IGBT is short and the impedance of the drive circuit is low, no reverse bias DC source is required. - The R-series IPM (R-IPM) devices require four control power sources, one source on the lower arm side, and three individual sources on the upper arm side with proper circuit isolation. 1.1.2 Built-in protection circuits The following built-in protective circuits are included in the R-IPM devices: (OC): Overcurrent protection (SC): Short-circuit protection (UV): Undervoltage protection for control power source (OH): Overheating protection (ALM): External alarm output 1) The OC and SC protection circuits provide protection against IGBT damage caused by overcurrent or load short-circuits. These circuits monitor the collector current of each IGBT using detection elements and, thus can minimize the possibility of severe damage to the IGBT. They also protect against arm short-circuits. Over Current protection=OC, Short Circuit protection=SC. 2) The UV protection circuit is in all of the IGBT drive circuits. This circuit monitors the Vcc supply voltage level against the IGBT drive Vin. In the event that the Vcc level falls below a specified level, the drive is biased to turn off the IGBT. Because of possible erratic Vcc voltage fluctuation in the drive source, hysteresis is added to the circuit to prevent premature shutdown. Under Voltage protection=UV. 3) The OH protection circuit protects the IGBT and FWD from overheating. It also monitors the insulating substrates with temperature detection elements installed on the insulating substrates inside the IPM . Case Temperature Over Heating protection=TcOH 4) Additionally, each IGBT chip of an R-IPM contains a temperature detection element on the IGBT die, which allows the OH to act rapidly when abnormal higher chip temperatures are detected. The protective operation time of TjOH after overheating is detected faster than that of TcOH time. Junction Temperature Over Heating protection=TjOH. 5) The ALM circuit outputs an alarm signal to outside of the IPM and is only monitored from the lower IGBTs. It is possible to shutdown the system reliably by issuing the alarm signal when the circuit detects an abnormal condition (specified above).

This signal is typically sent to the microcomputer controlling the IPM when the protection functions of TcOH and the lower arm side OC, SC, UV, or TjOH are detected. 1.1.3 Built-in brake circuit (7 in 1 IPM) - The drive circuits and protection circuits are included in the brake IGBT as same as inverter IGBTs. For the motor control inverter application, a brake circuit can be built to protect bus over voltage by just adding a power dissipating resistor. The dynamic brake IGBT fault information is also sent to the ALM output 1.1.4 Structural features 1) The insulation structure of ceramic substrates enables you to mount IPM directly on the heat sink, allowing more efficient cooling. 2) The control signal terminals are lined up with the standard pitch of 2.54mm and can be connected by one connector. Using guide pins, you can also insert a connector for printed circuit board mounting.

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3) The main power source input (P, N), brake output (B), and output terminal (U, V, W) are all arranged nearby, providing a package structure that allows for easy wiring. 4) The main terminals can be connected to a large current supply with M5 screws reliably. 5) Electrical connections (made by screws or connectors) do not require soldering, allowing the ease of module removal if necessary.

1.2 R-IPM Characteristics1.2.1 The electrical characteristics are equal to those of the 600V N-series and 1200V Sseries IGBTs. - Low surge and low noise due to soft switching, contributing to EMC counter measures. - Total losses are reduced because of the improved trade-off between the VCE (sat) and switching loss characteristics. 1.2.2 Higher reliability - In comparison with the conventional Fuji IPMs (J-Series and N-Series IPMs), reliability has improved by significantly reducing the number of SMD components to 8. - The IGBT chips are protected from any abnormal overheating by Tj detection function. 1.2.3 Package compatibility 1) Medium-capacity series The main terminal, control terminal, and mounting hole positions of the 600V series 50A to 150A, and 1200V series 25A to 75A (6 in 1-package, 7 in 1-package) are compatible with those of the conventional Fuji IPMs (JSeries and N-Series IPMs ). 2) Large-capacity series The main terminal and mounting hole positions are compatible with those of the 600V series 200A to 300A, and 1200V series 100A to 150A (6 in 1-package, 7 in 1-package) J-IPM. The configuration of control terminals is the same as that of packages of 600V/150A or lower, and the same connector can be applied. Built-in brake IGBT is also available. 3) The height of the cover is lower than that of the conventional Fuji models, allowing for compactness while maintaining compatibility to utilize the R-series devices when replacing IPMs in older designs.

1.3 Definition of Type Name and Lot No.Type name = 7MBP50RA-060-01 7 MBP 50 R A -060- 01Additional model number (if necessary) Voltage rating Additional number of series Series name Inverter IGBT current rating Indicates IGBT-IPM Number of main elements 7 chip circuit with brake built-in 6 chip circuit without dynamic brake

8101 8 1 01 Lot No.Additional number (01 to 99) Month of production 1: Jan 9: Sep. 0: Oct. N: Nov. D: Dec. Year of production 8: 1998

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1.4 R-IPM Line UpType Name 7MBP50RA060 7MBP75RA060 7MBP100RA060 7MBP150RA060 7MBP200RA060 7MBP300RA060 6MBP50RA060 6MBP75RA060 6MBP100RA060 6MBP150RA060 6MBP200RA060 6MBP300RA060 7MBP25RA120 7MBP50RA120 7MBP75RA120 7MBP100RA120 7MBP150RA120 6MBP25RA120 6MBP50RA120 6MBP75RA120 6MBP100RA120 6MBP150RA120 Package P610 P611 P612 P610 P611 P612 P610 P611 P612 P610 P611 P612 1200V 1200V 600V 600V VCES IGBT Current Inverter Brake 50A 30A 75A 50A 100A 50A 150A 50A 200A 75A 300A 100A NO BRAKE 50A 75A 100A 150A 200A 300A 25A 15A 50A 25A 75A 25A 100A 50A 150A 50A NO BRAKE 25A 50A 75A 100A 150A

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Chapter 2 Explanation of Symbols/Terminology2.1 Symbols in Block DiagramSymbol Vz RALM Description The value of the Zener diode Vz that determines the signal H (off signal) voltage of the control signal input terminal is specified in the electrical characteristics of the spec sheet. Resistance to determine the primary current of opto-coupler for insulated alarm output (ALM). About 10mA of current flows at Vcc=15V when an alarm is output. The value of RALM is specified in the electrical characteristics of the spec table.

2.1.1 Terminal symbols Terminal Symbol P N B U V W (1) GND U (3) Vcc U (4) GND V (6) Vcc V (7) GND W (9) Vcc W (10) GND (11) Vcc (2) Vin U (5) Vin V (8) Vin W (13) Vin X (14) Vin Y (15) Vin Z (12) Vin DB (16) ALM Control power source Vcc input in the upper arm U phase Vcc U: + side, GND U: - side Control power source Vcc input in the upper arm V phase Vcc V: + side, GND V: - side Control power source Vcc input in the upper arm W phase Vcc W : + side, GND W: - side Control power source Vcc input in the lower arm common Vcc: + side, GND: - side Control signal input in the upper arm U phase Control signal input in the upper arm V phase Control signal input in the upper arm W phase Control signal input in the lower arm X phase Control signal input in the lower arm Y phase Control signal input in the lower arm Z phase Control signal input in the lower arm brake phase Alarm signal ALM output when the protection circuits are operating 3-phase inverter output terminal Description Main power source Vd input terminal for the inverter bridge. P: + side, N: - side Brake output terminal: terminal to connect the resistor for regenerative operation declaration

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2.2 Technical Terms and DefinitionsTerm Bus voltage DC Bus voltage (surge) DC Bus voltage (short circuit) Collector-emitter voltage Reverse voltage Collector current FRD forward current Collector power dissipation Chip junction temperature Control power source voltage Input voltage Input current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage Collector-emitter cutoff current Collector-emitter saturation voltage Diode forward voltage Power supply current of P-line side pre-driver Power supply current of N-line side pre-driver Input signal threshold voltage Input zenor voltage Over heating protection temperature level Hysteresis Symbol VDC VDC (surge) VSC VCES VR IC ICP -IC IF PC Tj VCC Vin Iin VALM IALM Tstg Top Viso ICES VCE (sat) VF ICCP ICCN Vinth (on) Vinth (off) VZ TCOH TCH Description and Explanation DC Voltage that can be applied between PN terminals Peak value of the surge voltage that can be applied between PN terminals in switching DC source voltage between PN terminals that can be protected from short circuits/overcurrent Maximum collector-emitter voltage of the built-in IGBT chip and repeated peak reverse voltage of the FWD chip (only IGBT for the brake) Repeated peak reverse voltage of the FRD chip in the brake section Maximum DC collector current for the IGBT chip Maximum DC pulse collector current for the IGBT chip Maximum DC forward current for the FWD chip Maximum DC forward current for the FRD chip in the brake section Maximum power dissipation for one IGBT element Maximum junction temperature of the IGBT and FWD chips during continuous operation Voltage that can be applied between GND and each Vcc terminal Voltage that can be applied between GND and each Vin terminal Current can be flown between GND and each Vin terminal Voltage that can be applied between GND and ALM terminal Current that can be flown between GND and ALM terminal Range of ambient temperature for storage or transportation, when there is no electrical load Range of case temperature for electrical operation (Fig. 1 shows the measuring point of the case temperature Tc) Maximum effective value of the sine-wave voltage between the terminals and the heat sink, when all terminals are shorted simultaneously. Collector current when a specified voltage is applied between the collector and emitter of IGBT with all input signal H (=Vz) Collector-emitter voltage at a specified collector current when the input signal of the only elements to be measured is L (=0V) and the all other input of elements are H (=Vz) Forward voltage at a specified forward current with all input signal H (=Vz) Current between GND and each Vcc of the P side (upper arm side) control power source Current between GND and Vcc of the N side (lower arm side) control power source Control signal voltage when IGBT changes from OFF to ON Control signal voltage when IGBT changes from ON to OFF Clamp voltage between GND and each Vin when the control signal is OFF Case temperature at which the Tc overheat protection circuit operates Difference between TcOH and the case temperature at which the Tc overheat protection is reset after lowering of Tc

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IGBT chips over heating protection temperature level Hysteresis Overcurrent protective operation current Overcurrent cut off time Undervoltage protection level Hysteresis Signal hold time Short circuit protection delay time Limiting resistor for alarm Switching time Chip-case thermal resistance Chip-fin thermal resistance Screw torque mounting Screw torque terminal Weight IPM switching frequency Reverse recovery current Reverse bias safe operation area Switching loss

TjOH TjH IOC tDOC VUV VH tALM tSC RALM t on t off tf t rr Rth (j-c) Rth (c-f)

Junction temperature at which the Tj overheat protection circuit operates Difference between TjOH and the junction temperature at which the Tj overheat protection is reset after lowering of Tj IGBT collector current at which the overcurrent protection (OC) works Shown in Fig. 2 Vcc at which the control source voltage lowering protection (UV) works Difference between VUV and Vcc at which protection is reset with the rise of Vcc after UV operation Period in which an alarm continues to be output (ALM) from the ALM terminal after the N side protection function is actuated Shown in Fig. 3 Built-in resistance limiting the primary current of opto-coupler for ALM output Shown in Fig. 4

Chip-case thermal resistance of IGBT or FWD Thermal resistance between the case and heat sink, when mounted on a heat sink at the recommended torque using the thermal compound Screw torque when mounting IPM onto a heat sink Screw torque for electrical connection of the main terminal

f sw Irr RBSOA Eon Eoff Err

Weight of a IPM Range of the control signal frequencies for input into the control signal input terminal Shown in Fig. 4 Area of the current and voltage in which IGBT can be cutoff under specified conditions during turn-off IGBT switching loss during turn-on IGBT switching loss during turn-off FWD switching loss during reverse recovery

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Fig. 1a Measuring point of Tc

1

4

7

10

16

B

P

P610/ P611

N W V U

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Fig. 1b Measuring point of Tc

1

4

7

10

16

PP612

P B

N U V W

N

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Ioc

Ic

IALM tDOC

Fig. 2

Overcurrent cut off time

tscIsc

Ic

Ic

Ic

IALM

IALM

IALM

Fig. 3

Short circuit protection delay time

Input Signal (Vin)

Vinth(on) trr

Vinth(off)

Irr 90% Collector Current (Ic) tf tonFig. 4 Switching time

90% 10%

toff

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Chapter 3

Explanation of Functions

3.1 Built-in Electric Functions- IGBT and FWD for 3-phase inverter - IGBT and FRD for brake (Since 6MBP**RA060 contains no brake, the B terminal is not connected internally) - Drive function of all IGBT (7MBP**RA060 contains also the drive function of a brake) - Overcurrent (OC) protection function in all IGBT - Short circuit (SC) protection function in all IGBT - Undervoltage protection (UV) in drive circuits of all IGBT - Chip overheating protection function (TjOH) of all IGBT - Substrate temperature overheating protection function (TcOH) on the insulating substrate that mounts all IGBT/FWD - Alarm output function (ALM) to indicate the operation of protection when N-line side OC, SC, UV, TjOH, or TcOH operates

3.2 Explanation of Functions3.2.1 IGBT and FWD for 3-phase inverter As shown in Fig. 5, IPM contains IGBT and FWD for 3-phase inverter and they are 3-phase connected inside the IPM. Connecting the main power source to the P and N terminals and the 3-phase output lines to the U, V, and W terminals completes main wiring. Connect a Snubber circuit to suppress the surge voltage. 3.2.2 IGBT and FRD for brake As shown in Fig. 5, IPM contains IGBT and FRD for brake and they are connected internally to the B terminal. By controlling the brake IGBT through connection of the brake resistance to the B terminal, energy can be dissipated while decelerating to suppress the rise of voltage between PN terminals. 3.2.3 Drive function of IGBT The drive function of all IGBT is contained and has the following characteristics. 1) Soft switching dv/dt of ON/OFF is controlled independently by the characteristics of drive elements without using a single gate resistance (Rg). 2) Single power source drive without any negative bias Since the cable between the drive circuit and IGBT is short and thus the wiring impedance is low, IPM can be driven without negative bias. The lower arm side has a common control GND and is driven by one power source. Four isolated sources are required to drive the whole IPM. 3) Error ON prevention Since a circuit is set up to ground the gate voltage with low impedance while OFF, error ON caused by the rise of VGE due to noise can be prevented.

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3.2.4 Overcurrent protection function (OC) 1) The overcurrent protection of IGBT is provided through detection of the collector current. If the Ic is exceeded Ioc level for a period of about 6 to 8 s (tDOC), soft IGBT cutoff is performed. However, if the level falls below the Ioc level in a period shorter than tDOC, or if the OFF signal is entered in the tDOC period, the OC protection function does not work. Both OC and SC do not work while OFF. 2) The OC protection function is mounted on all IGBTs including the brake. 3) Small detection losses The detection current that flows in the current sense IGBT contained in the IGBT chip is very small as compared with Ic of the main IGBT. Therefore, it is possible to make detection loss smaller than that caused by the shunt resistance. 4) Built-in latch to prevent malfunctioning (common also to UV and OH) The whole OC protection function has a latch period of about 2ms, and even if the ON signal is entered during a latch period, IGBT in which the protection is actuated does not operate. Since the ALM of each phase is mutually connected in the lower side including the brake, all IGBTs on the arm lower side stop for a latch period if the lower arm side performs protection operation. 5) Soft cutoff (common also to UV and OH) Since soft IGBT cutoff occurs when the protection circuit operates, di/dt during cutoff is small and the surge voltage can be suppressed low. 6) Operation delay time (period in which protection operation is not carried out) Since the protection is actuated only if the Ic level is exceeded Ioc level continuously for a period of tDOC, malfunctioning due to instantaneous overcurrent or noise is not caused. 3.2.5 Short circuit protection function (SC) The SC protection function always cooperates with the OC protection function to suppress the peak current when load or arm is shorted. 3.2.6 Undervoltage protection (UV) The UV protection function carries out the soft IGBT cutoff if the control source voltage (Vcc) falls to VUV when the input signal is ON. Since the UV hysteresis is set, the alarm is canceled when Vcc returns to VUV + VH if the input signal is OFF.

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3.2.7 Case temperature overheating protection function (TcOH) 1) The TcOH protection function detects the insulating substrate temperature with the temperature detection elements set up on the same ceramic substrate as that on which the power chips (IGBT and FWD) are set up. The protection function is activated if the detected temperature exceeds the protection temperature level continuously (TcOH) for a specified period of time (about 1ms). If the input signal of the lower arm side IGBT is ON, the soft cutoff occurs and all IGBT on the lower arm side are held off for a latch period of about 2ms. 2) OH hysteresis The hysteresis TcH is set up also in TcOH to prevent chattering. If the case temperature Tc falls below TcOH-TcH after latch period of about 2ms, the protection is released. 3) Protection operation delay time To prevent malfunctioning due to noise, the OH protection function is actuated only if TcOH is exceeded continuously for a period of about 1ms (tDOH). 3.2.8 Chip temperature overheating protection function (TjOH) 1) The TjOH protection function detects the IGBT chip temperature with the temperature detection elements set up on all IGBT chips. The protection function is activated if the detection temperature exceeds the protection temperature level continuously (TjOH) for a specified period of time (about 1ms). If the input signal is ON, the soft IGBT cutoff occurs and IGBT stops for a latch period of 2ms. If the TjOH protection of the lower arm is actuated, all IGBTs on the lower arm side stop for a latch period of 2ms. 2) OH hysteresis The hysteresis TjH is set up also in TjOH to prevent chattering. If the chip temperature Tj falls below TjOH-TjH after latch period of 2ms and the input signal is OFF, the protection is released. 3) Protection operation delay time To prevent malfunctioning due to noise, the OH protection function is only activated if TjOH is exceeded continuously for a period of about 1ms (tDOH). 3.2.9 Alarm output function (ALM) 1) Alarms are output during latch period of each protection operation of the lower arm side OC, UV, TjOH, and TcOH. If Vin is ON even after the latch period passes, the protection and alarm are not reset. In such a case, the protection and alarm are reset immediately after Vin changes to OFF. 2) Upper arm No alarm is output when the protection operation (OC, UV, TjOH) is occurred in only the upper arm side. If the input signal is OFF after the latch period of 2ms passes, the protection is released. 3) Alarm mutual connection of the lower arm Since the alarm terminals of each drive on the lower arm side are connected mutually, all IGBT on the lower arm side including DB stop during alarm output. If the input signal is OFF after the latch period of 2ms passes, the protection is released. 3.2.10 IPM internal block diagram Fig. 5 shows an IPM internal block diagram (with brake circuit). Fig. 6 shows an IPM internal block diagram (without brake circuit).

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Fig. 5

IPM internal block diagram (with brake)

VccU VinU

VZ Pre-Driver

P

GNDU VccV VinV VZ Pre-Driver

U

GNDV VccW VinW VZ Pre-Driver

V

GNDW Vcc VinX GND VZ Pre-Driver

W

VinY

VZ

Pre-Driver

VinZ

VZ

Pre-Driver

B VinDB VZ Pre-Driver

NRALM

ALM

1.5k

Over heating protection circuit

Pre-drivers include following functions Amplifier for driver Short circuit protection Under voltage lockout circuit Over current protection IGBT chip over heating protection

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Fig. 6

IPM internal block diagram (without brake)

VccU VinU

VZ Pre-Driver

P

GNDU VccV VinV VZ Pre-Driver

U

GNDV VccW VinW VZ Pre-Driver

V

GNDW Vcc VinX GND VZ Pre-Driver

W

VinY

VZ

Pre-Driver

VinZ

VZ

Pre-Driver

NC NC

B

NRALM

ALM

1.5k

Over heating protection circuit

Pre-drivers include following functions Amplifier for driver Short circuit protection Under voltage lockout circuit Over current protection IGBT chip over heating protection

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3.3 Timing ChartThe following figures show a timing chart of the protection function. Undervoltage protection (UV) -1 (Timing Chart 1)VUV+VH VUV Vcc