fuji igbt module v series 1200v family - fuji electric … − fuji igbt module v series 1200v...
TRANSCRIPT
Fuji IGBT Module V Series 1200V Family Technical Notes
1 RBSOA, SCSOA ･････････････････ MT5F24325
2 High current output characteristics ･････････････････ MT5F24326
3 Switching energy and Reverse recovery dV/dt with combination of Rg and Cge
･････････････････ MT5F21212
4 Junction breakdown voltage VCES and junction temperature Tj
･････････････････ MT5F24327
5 -Vge and switching loss characteristics ･････････････････ MT5F21212
6 Gate resistance dependence of surge voltage
･････････････････ MT5F24328
7 -dlc/dt at turn-off and Tj characteristics ･････････････････ MT5F24329
8 Dynamic avalanche voltage Vav and Tj characteristics
･････････････････ MT5F24330
9 Parallel connection of 2in1 package modules ･････････････････ MT5F24335
10 Short-circuit capacity ･････････････････ MT5F24336
11 Gate resistance dependence of surge voltage
･････････････････ MT5F26530
12
13
Radiation noise comparison by the difference in a gate capacitance connection
Rg-dV/dt dependency
position ･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
･
MT5F25003
MT5F29536
JANUARY 2015
1
− Fuji IGBT Module V Series 1200V Family− RBSOA and SCSOA
Technical data: MT5F24325
Reverse bias safe operating area[1200V Inverter IGBT]
+Vge=15V, -Vge15V, RgRg(spec.) Tj=150oC
0
1
2
3
4
5
6
7
8
0 200 400 600 800 1000 1200 1400
Collector-Emitter voltage : VCE [V]
Col
lect
or c
urre
nt :
x I
c ra
ting
[a.u
.]
RBSOA(Repetitive pulse)
SCSOA(Non-repetitive pulse)
Fig. RBSOA and SCSOA
1
− Fuji IGBT Module V Series 1200V Family − High current output characteristics
V series 1200V product family
Conditions: Tj = 25C, 125C and 150C
Vge = 15 V
Note: This data shows the typical waveforms of chip characteristics. The effect of the internal
resistance of the module is not included
Technical data: MT5F24326
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 1 2 3 4 5 6 7 8 9 10
Collector to Emitter voltage Vce (V)
Rat
io o
f col
lect
or c
urre
nt to
rat
ing
(a.u
.)
Tj=25deg.C
Tj=125deg.C
Tj=150deg.C
Vge=15V
1
− Fuji IGBT Module V Series 1200V Family −
Switching energy and Reverse recovery dV/dt with combination of Rg and Cge
Type name: 2MBI600VN-120-50
Conditions: Vdc=600V, Ic, If=40A and/or 600A, Vge=+/-15V, Cge=0, 47, 94nF,
Tj=25oC or 125oC
(a) Rg dependence of reverse recovery dv/dt (b) Rg dependence of turn-on loss
(c) Rg dependence of turn-off loss (d) Rg dependence of reverse recovery loss
If=40A
Tj=25oC
Ic=600A
Tj=125oC
Ic=600A
Tj=125oC
If=600A
Tj=125oC
2
Cge and Rg Dependence for Sum of Switching Loss and Reverse Recovery dv/dt
Additional external capacitance between IGBT gate and emitter terminals has an effect of improving the
trade off between reverse recovery dv/dt and total switching energy as shown in above chart. However,
simply add Cge slows down the IGBT significantly and it results penalty of increasing the switching loss.
Therefore, the combination of extra-Cge and reduction of the gate resistance (Rg) is recommended to
achive the highest performance of lower dV/dt as well as keep switching energy low. Typical Cge and Rg
values for initial guess are : 2x of Cies in our datasheet and 1/2 Rg of your original design, however,
experimental confirmation in practical application is recommended,
Technical data: MT5F21212
1
− Fuji IGBT Module V Series 1200V Family −
Junction breakdown voltage VCES and junction temperature Tj
In General, the breakdown voltage of power semiconductor devices have liner function to the junction
temperature if "impact ionization" and "Avalanche multiplication" are dominatant physics of junction
breakdownAt low temperature, the carriers in drift region are relatively easier to have high velocity because
of less scattering due to lattice vibration so that the impact ionization ratio increases. Therefore, the
breakdown voltage of the power semiconductor device becomes lower at low temperature. The
temperature effect shown in the above figure should be taken into account into practical design not to
exceed breakfown voltage if the target application have chances of low temperature operation and/or
start-up.
Technical data: MT5F24327
Junction Temperature Dependence of Junction Breakdown Voltage
Typ.
Min.
1
− Fuji IGBT Module V Series 1200V Family −
-Vge and switching loss characteristics
Type name: 2MBI300VN-120-50
Conditions: Vdc=600V, Ic=300A, Vge=+15V,, Rg=0.92
Technical data: MT5F21212
1
− Fuji IGBT Module V Series 1200V Family −
Gate resistance dependence of surge voltage
Type name: 2MBI450VN-120-50
Conditions: Vdc=600V, Ic=450A, Vge=+/-15V, Ls=70nH,
The surge voltage, especially at IGBT turn off, depends on the gate resistance. As showin in the figure
above figure shows, the surge voltage is able to control with the gate resistance but the curveshave peaks
depending on the junction temperature,.. Although detailed reasons for this relation are not described here,
the background of such behaviors have already been analyzed and published. The primary reason of such
behavior is the interaction of two silicon physcs in IGBT chip; 1) the carriers stored in the drift region and 2)
Current throuhg MOS channel1).
This chart also indicates that the increasing the gate resistance is not only the method to solve turn-off
spike voltage issue.The decrease of the gate resistance may also have an effect
Reference :
1) Y. Onozawa et al., “Investigation of carrier streaming effect for the low spike fast IGBT turn-off”,
Proc. ISPSD, pp173-176, 2006.
Technical data: MT5F24328
Gate Resistance Dependence of Turn-off Surge Voltage
1
− Fuji IGBT Module V Series 1200V Family −
-dlc/dt at turn-off and Tj characteristics
Technical data: MT5F24329
2MBI600VN-120-50
Fig. -dlc/dt at Turn-Off and Tj Characteristics
Vge
Ic
Vce
-dIc/dt
Vge
Ic
Vce
-dIc/dt
1
− Fuji IGBT Module V Series 1200V Family −
Dynamic avalanche voltage Vav and Tj characteristics
Type name: 2MBI600VN-120-50
Technical data: MT5F24330
Fig. Dynamic Avalanche Voltage (Vav) as function of Tj
Vav definition (from turn-off waveforms) Vcc=600V, Ic=2xIc (nom) Rg=Rg(spec), Vge=15V/-15V
Ic
VGE
VCE
Vav
Typ.
1
− Fuji IGBT Module V Series 1200V Family −
Parallel connection of 2in1 package modules
Circuit configuration and formula
ΔVon=|Von2-Von1| (Von2>Von1)
Ic (ave)=(I1+I2)/2
Current imbalance is caused by the difference between Von1 and Von2, and current is divided into I1 and I2. In this case, the current imbalance can be obtained from the following calculating formula.
1001)(
1
aveCI
I (%)
Δ Von and current imbalance rate
When nIGBT modules are connected in parallel, the maximum allowable current Σl can be expressed in the following formula by using the current imbalance rate α at two-parallel connection. This maximum allowable current Σl is used for reference only.
1001
1001
)1(1(max)
nII C
0
5
10
15
20
25
30
0 0.1 0.2 0.3 0.4 0.5 0.6
Von at Tj=25oC (V)
Cur
rent
imba
lanc
e ra
te
at
Tj=
125o
C (
%)
IGBT
FWD
Von1
I1 ↓ ↓ I2
Von2
Technical data: MT5F24335
1
− Fuji IGBT Module V Series 1200V Family −
Short-circuit capacity
Technical data: MT5F24336
250 500 750 10000
10
20
30
40
50
Vge=15V
[email protected] [email protected] [email protected] [email protected]
1200V-V serise
Vcc [V]
Sho
rt c
ircui
t ca
pabi
lity
: P
w [
sec]
Fig. Relation between applied voltage and short-circuit capacity (1200V Family)
1
－ Fuji IGBT Module V Series 1200V Family －
Gate resistance dependence of surge voltage
Type name： 2MBI600VE-120-50
Conditions： Vdc=600V, Ic=600A, Vge=+/-15V, Tj=25deg.C, Rg=vari.
The surge voltage, especially at IGBT turn off, depends on the gate resistance. As shown in the figure
above figure shows, the surge voltage is able to control with the gate resistance but the curve shave peaks
depending on the junction temperature. The primary reason of such behavior is the interaction of two silicon
physics in IGBT chip; 1) the carriers stored in the drift region and 2) Current through MOS channel1).
Reference：
1) Y. Onozawa et al., “Investigation of carrier streaming effect for the low spike fast IGBT turn-off”, Proc.
ISPSD, pp173-176, 2006.
Technical data：MT5F26530
600
700
800
900
1000
1100
0.1 1 10 100
Rg （ohm）
Vcep
（V
）
Snubber C=0.47uFx1
Snubber C=1.80uFx1
Snubber C=1.80uFx2
Gate Resistance Dependence of Turn-off Surge Voltage
1
－ Fuji IGBT Module V Series 1200V Family －
Radiation noise comparison by the difference in a gate capacitance connection
position
Type name：2MBI300VH-120-50
As shown in the above figure, the higher noise reduction effect is acquired by connecting Cge to the module
terminal side.
Technical data：MT5F25003
RG
RG
CGE
CGE
CGE
CGE
About 30cm
Control Board
When CGE is attached to the control board side
When CGE is attached to the terminal side
Figure Radiation noise comparison by the difference in a gate capacitance connection position
0
10
20
30
40
50
60
70
80
90
30 40 50 60 70 80 90 100 110 120 130
Frequency(ＭＨｚ)
Fie
ld inte
sity
(dbuV
)
Rg_4.7Ω/Cge_22nF_Control board side
Rg_4.7Ω/Cge_22nF_Terminal side
1
MT
5F
29
53
6
－
Fu
ji I
GB
T m
od
ule
S,U
,V-s
erie
s 1
200
V －
Rg
-dV
/dt
dep
end
ency
of
S,U
,V-s
erie
s
Tes
t m
odule
:
2M
BI7
5S
-120
, 2M
BI7
5U
4A
-120
, 2M
BI7
5V
A-1
20-5
0
Tes
t co
ndit
ion :
V
dc=
600V
, Ic
=7.5
A(t
urn
on
, re
ver
se r
ecover
y),
75A
(turn
off
), V
ge=
+/-
15V
, T
j=25deg
.C, R
g=
var
i.
Rgon
vs.
Turn
on d
V/d
t
R
goff
vs.
Turn
off
dV
/dt
R
go
n v
s. R
ever
se r
eco
ver
y d
V/d
t
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Turn on dV/dt (V/usec)
Rgo
n (Ω
)
V-series
S-series
U-series
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Turn off dV/dt (V/usec)
Rgo
ff (Ω
)
V-series
S-series
U-series
10
00
10
00
0
10
00
00
10
00
00
0
02
04
06
08
01
00
Reverse recovery dV/dt (V/usec)
Rgo
n (Ω
)
V-series
S-series
U-series
2
MT
5F
29
53
6
Tes
t m
odule
:
2M
BI1
00S
-12
0, 2M
BI1
00S
C-1
20
, 2M
BI1
00U
4A
-120-5
0,
2M
BI1
00V
A-1
20-5
0
Tes
t co
ndit
ion :
V
dc=
600V
, Ic
=10A
(turn
on, re
ver
se r
ecover
y),
100A
(turn
off
), V
ge=
+/-
15V
, T
j=25deg
.C, R
g=
var
i.
Rgon
vs.
Turn
on d
V/d
t
R
goff
vs.
Turn
off
dV
/dt
R
go
n v
s. R
ever
se r
eco
ver
y d
V/d
t
Tes
t m
odule
:
2M
BI1
50S
-12
0, 2M
BI1
50S
C-1
20,
2M
BI1
50U
4A
-120-5
0,
2M
BI1
50V
A-1
20-5
0,
2M
BI1
50
VB
-12
0-5
0
Tes
t co
ndit
ion :
V
dc=
600V
, Ic
=15A
(turn
on, re
ver
se r
ecover
y),
150A
(turn
off
), V
ge=
+/-
15V
, T
j=25d
eg.C
, R
g=
var
i.
Rgon
vs.
Turn
on d
V/d
t
R
goff
vs.
Turn
off
dV
/dt
R
go
n v
s. R
ever
se r
eco
ver
y d
V/d
t
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Turn on dV/dt (V/usec)
Rgo
n (Ω
)
U-series
V-series
S-series
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Turn off dV/dt (V/usec)
Rgo
ff (Ω
)
U-series
V-series
S-series
10
00
10
00
0
10
00
00
10
00
00
0
02
04
06
08
01
00
Reverse recovery dV/dt (V/usec)
Rgo
n (Ω
)
U-series
V-series
S-series
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Turn on dV/dt (V/usec)
Rgo
n (Ω
)
U-series
V-series
S-series
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Turn off dV/dt (V/usec)
Rgo
ff (Ω
)
U-series
V-series
S-series
10
00
10
00
0
10
00
00
10
00
00
0
02
04
06
08
01
00
Reverse recovery dV/dt (V/usec)
Rgo
n (Ω
)
U-series
V-series
S-series
3
MT
5F
29
53
6
Tes
t m
odule
:
2M
BI2
00S
-12
0, 2M
BI2
00S
B-1
20,
2M
BI2
00U
4B
-120-5
0,
2M
BI2
00U
4H
-120
-50,
2M
BI2
00
VB
-12
0-5
0,
2M
BI2
00
VH
-12
0-5
0
Tes
t co
ndit
ion :
V
dc=
600V
, Ic
=20A
(turn
on, re
ver
se r
ecover
y),
200A
(turn
off
), V
ge=
+/-
15V
, T
j=25deg
.C, R
g=
var
i.
Rgon
vs.
Turn
on d
V/d
t
R
goff
vs.
Turn
off
dV
/dt
R
go
n v
s. R
ever
se r
eco
ver
y d
V/d
t
Tes
t m
odule
:
2M
BI2
25
U4J-
120-5
0, 2M
BI2
25U
4N
-120-5
0, 2M
BI2
25V
J-120
-50, 2M
BI2
25
VN
-120-5
0
Tes
t co
ndit
ion :
V
dc=
600V
, Ic
=22.5
A(t
urn
on,
rever
se r
ecover
y),
225A
(turn
off
), V
ge=
+/-
15V
, T
j=25deg
.C, R
g=
var
i.
Rgon
vs.
Turn
on d
V/d
t
R
goff
vs.
Turn
off
dV
/dt
R
go
n v
s. R
ever
se r
eco
ver
y d
V/d
t
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Turn on dV/dt (V/usec)
Rgo
n (Ω
)
U-series
V-series
S-series
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Turn off dV/dt (V/usec)
Rgo
ff (Ω
)
U-series
V-series
S-series
10
00
10
00
0
10
00
00
10
00
000
02
04
06
08
01
00
Reverse recovery dV/dt (V/usec)
Rgo
n (Ω
)
U-series
V-series
S-series
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Turn on dV/dt (V/usec)
Rgo
n (Ω
)
U-series
V-series
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Turn off dV/dt (V/usec)
Rgo
ff (Ω
)
U-series
V-series
10
00
10
00
0
10
00
00
10
00
00
0
02
04
06
08
01
00
Reverse recovery dV/dt (V/usec)
Rgo
n (Ω
)
U-series
V-series
4
MT
5F
29
53
6
Tes
t m
odule
:
2M
BI3
00S
-120, 2M
BI3
00U
4D
-120
-50,
2M
BI3
00U
4E
-120,
2M
BI3
00U
4H
-120
-50,
2M
BI3
00
U4J-
12
0-5
0,
2M
BI3
00
U4
N-1
20-5
0,
2M
BI3
00V
D-1
20
-50, 2M
BI3
00V
E-1
20-5
0,
2M
BI3
00V
H-1
20-5
0,
2M
BI3
00V
J-120-5
0,
2M
BI3
00
VN
-12
0-5
0
Tes
t co
ndit
ion :
V
dc=
600V
, Ic
=30A
(turn
on, re
ver
se r
ecover
y),
300A
(turn
off
), V
ge=
+/-
15V
, T
j=25deg
.C, R
g=
var
i.
Rgon
vs.
Turn
on d
V/d
t
R
goff
vs.
Turn
off
dV
/dt
R
go
n v
s. R
ever
se r
eco
ver
y d
V/d
t
Tes
t m
odule
:
2M
BI4
00U
4H
-120-5
0, 2M
BI4
00V
D-1
20-5
0
Tes
t co
ndit
ion :
V
dc=
600V
, Ic
=40A
(turn
on, re
ver
se r
ecover
y),
400A
(turn
off
), V
ge=
+/-
15V
, T
j=25deg
.C, R
g=
var
i.
Rgon
vs.
Turn
on d
V/d
t
R
goff
vs.
Turn
off
dV
/dt
R
go
n v
s. R
ever
se r
eco
ver
y d
V/d
t
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Turn on dV/dt (V/usec)
Rgo
n (Ω
)
U-series
V-series
S-series
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Turn off dV/dt (V/usec)
Rgo
ff (Ω
)
U-series
V-series
S-series
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Reverse recovery dV/dt (V/usec)
Rgo
n (Ω
)
U-series
V-series
S-series
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Turn on dV/dt (V/usec)
Rgo
n (Ω
)
U-series
V-series
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Turn off dV/dt (V/usec)
Rgo
ff (Ω
)
U-series
V-series
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Reverse recovery dV/dt (V/usec)
Rgo
n (Ω
)
U-series
V-series
5
MT
5F
29
53
6
Tes
t m
odule
:
2M
BI4
50U
4E
-120,
2M
BI4
50U
4J-
120-5
0,
2M
BI4
50U
4N
-120
-50, 2M
BI4
50V
E-1
20-5
0,
2M
BI4
50
VH
-12
0-5
0,
2M
BI4
50
VJ-
12
0-5
0,
2M
BI4
50V
N-1
20-5
0
Tes
t co
ndit
ion :
V
dc=
600V
, Ic
=45A
(turn
on, re
ver
se r
ecover
y),
450A
(turn
off
), V
ge=
+/-
15V
, T
j=25deg
.C, R
g=
var
i.
Rgon
vs.
Turn
on d
V/d
t
R
goff
vs.
Turn
off
dV
/dt
R
go
n v
s. R
ever
se r
eco
ver
y d
V/d
t
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Turn on dV/dt (V/usec)
Rgo
n (Ω
)
U-series
V-series
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Turn off dV/dt (V/usec)
Rgo
ff (Ω
)
U-series
V-series
10
0
10
00
10
00
0
10
00
00
02
04
06
08
01
00
Reverse recovery dV/dt (V/usec)
Rgo
n (Ω
)
U-series
V-series
WARNING
1.��This�Catalog�contains�the�product�specifications,�characteristics,�data,�materials,�and�structures�as�of�January 2015.The
��contents�are�subject�to�change�without�notice�for�specification�changes�or�other�reasons.��When�using�a�product�listed�in�this�Catalog,�be�
sur�to�obtain�the�latest�specifications.
2.��All�applications�described�in�this�Catalog�exemplify�the�use�of�Fuji's�products�for�your�reference�only.��No�right�or�license,�either�express�or�implied,�under�any�patent,�copyright,�trade�secret�or�other�intellectual�property�right�owned�by�Fuji�Electric�Co.,�Ltd.�is�(or�shall�be�deemed)�granted.��Fuji�Electric�Co.,�Ltd.�makes�no�representation�or�warranty,�whether�express�or�implied,�relating�to�the�infringement�or�alleged�infringement�of�other's�intellectual�property�rights�which�may�arise�from�the�use�of�the�applications�described�herein.
3.��Although�Fuji�Electric�Co.,�Ltd.�is�enhancing�product�quality�and�reliability,�a�small�percentage�of�semiconductor�products�may�become�faulty.��When�using�Fuji�Electric�semiconductor�products�in�your�equipment,�you�are�requested�to�take�adequate�safety�measures�to�prevent�the�equipment�from�causing�a�physical�injury,�fire,�or�other�problem�if�any�of�the�products�become�faulty.��It�is�recommended�to�make�your�design�failsafe,�flame�retardant,�and�free�of�malfunction.
�4.��The�products�introduced�in�this�Catalog�are�intended�for�use�in�the�following�electronic�and�electrical�equipment�which�has�normal�reliability�requirements.�•�Computers� •�OA�equipment� •�Communications�equipment�(terminal�devices)� •�Measurement�equipment�•�Machine�tools� •�Audiovisual�equipment� •�Electrical�home�appliances� •�Personal�equipment� •�Industrial�robots�etc.
5.��If�you�need�to�use�a�product�in�this�Catalog�for�equipment�requiring�higher�reliability�than�normal,�such�as�for�the�equipment�listed�below,�it�is�imperative�to�contact�Fuji�Electric�Co.,�Ltd.�to�obtain�prior�approval.��When�using�these�products�for�such�equipment,�take�adequate�measures�such�as�a�backup�system�to�prevent�the�equipment�from�malfunctioning�even�if�a�Fuji's�product�incorporated�in�the�equipment�becomes�faulty.�•�Transportation�equipment�(mounted�on�cars�and�ships)� � •�Trunk�communications�equipment�•�Traffic-signal�control�equipment� � � •�Gas�leakage�detectors�with�an�auto-shut-off�feature�•�Emergency�equipment�for�responding�to�disasters�and�anti-burglary�devices� •�Safety�devices�•�Medical�equipment
6.��Do�not�use�products�in�this�Catalog�for�the�equipment�requiring�strict�reliability�such�as�the�following�and�equivalents�to�strategic�equipment�(without�limitation).�•�Space�equipment� � •�Aeronautic�equipment� •�Nuclear�control�equipment�•�Submarine�repeater�equipment
7.��Copyright�©1996-2013�by�Fuji�Electric�Co.,�Ltd.�All�rights�reserved.�No�part�of�this�Catalog�may�be�reproduced�in�any�form�or�by�any�means�without�the�express�permission�of�Fuji�Electric�Co.,�Ltd.
8.��If�you�have�any�question�about�any�portion�in�this�Catalog,�ask�Fuji�Electric�Co.,�Ltd.�or�its�sales�agents�before�using�the�product.�Neither�Fuji�Electric�Co.,�Ltd.�nor�its�agents�shall�be�liable�for�any�injury�caused�by�any�use�of�the�products�not�in�accordance�with�instructions�set�forth�herein.