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FUJI POWER SEMICONDUCTORS IGBT-IPM R-SERIES

APPLICATION MANUAL

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CONTENTS

Chapter 1 Features 1.1 IGBT-IPM Characteristics........................................................................ 3 1.2 R-IPM Characteristics.............................................................................. 4 1.3 Definition of Type Name and Lot No........................................................ 4 1.4 R-IPM Line Up......................................................................................... 5 Chapter 2 Explanation of Symbols/Terminology 2.1 Symbols in Block Diagram....................................................................... 6 2.2 Technical Terms and Definitions ............................................................. 7 Chapter 3 Explanation of Functions 3.1 Built-in Electric Functions ...................................................................... 12 3.2 Explanation of Functions ....................................................................... 12 3.3 Timing chart........................................................................................... 17 Chapter 4 Examples of Application Circuits 4.1 The Entire Circuit................................................................................... 19 4.2 Precautions ........................................................................................... 19 4.3 The Opto-couplers................................................................................. 20 4.4 Connector.............................................................................................. 20 Chapter 5 Cooling Design 5.1 Junction Temperature............................................................................ 21 5.2 Precautions for Heat Sink Selection ...................................................... 21 Chapter 6 Precautions Using R-IPM 6.1 Main Power Source Vd.......................................................................... 22 6.2 Control Power Source Vcc .................................................................... 22 6.3 Protection Operation.............................................................................. 23 6.4 Reliability ............................................................................................... 25 6.5 Others.................................................................................................... 25

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Chapter 1 Features 1.1 IGBT-IPM Characteristics The intelligent power module (IPM) has the following characteristics when compared with the combination of the conventional IGBT modules and drive circuits. 1.1.1 Built-in drive circuit - IGBT gate drives operate under optimal conditions. - Since the wiring length between the internal drive circuit and IGBT is short and the impedance of the drive circuit is low, no reverse bias DC source is required. - The R-series IPM (R-IPM) devices require four control power sources, one source on the lower arm side, and three individual sources on the upper arm side with proper circuit isolation. 1.1.2 Built-in protection circuits The following built-in protective circuits are included in the R-IPM devices: (OC): Overcurrent protection (SC): Short-circuit protection (UV): Undervoltage protection for control power source (OH): Overheating protection (ALM): External alarm output 1) The OC and SC protection circuits provide protection against IGBT damage caused by overcurrent or load short-circuits. These circuits monitor the collector current of each IGBT using detection elements and, thus can minimize the possibility of severe damage to the IGBT. They also protect against arm short-circuits. Over Current protection=OC, Short Circuit protection=SC. 2) The UV protection circuit is in all of the IGBT drive circuits. This circuit monitors the Vcc supply voltage level against the IGBT drive Vin. In the event that the Vcc level falls below a specified level, the drive is biased to turn off the IGBT. Because of possible erratic Vcc voltage fluctuation in the drive source, hysteresis is added to the circuit to prevent premature shutdown. Under Voltage protection=UV. 3) The OH protection circuit protects the IGBT and FWD from overheating. It also monitors the insulating substrates with temperature detection elements installed on the insulating substrates inside the IPM . Case Temperature Over Heating protection=TcOH 4) Additionally, each IGBT chip of an R-IPM contains a temperature detection element on the IGBT die, which allows the OH to act rapidly when abnormal higher chip temperatures are detected. The protective operation time of TjOH after overheating is detected faster than that of TcOH time. Junction Temperature Over Heating protection=TjOH. 5) The ALM circuit outputs an alarm signal to outside of the IPM and is only monitored from the lower IGBTs. It is possible to shutdown the system reliably by issuing the alarm signal when the circuit detects an abnormal condition (specified above). This signal is typically sent to the microcomputer controlling the IPM when the protection functions of TcOH and the lower arm side OC, SC, UV, or TjOH are detected. 1.1.3 Built-in brake circuit (7 in 1 IPM) - The drive circuits and protection circuits are included in the brake IGBT as same as inverter IGBTs. For the motor control inverter application, a brake circuit can be built to protect bus over voltage by just adding a power dissipating resistor. The dynamic brake IGBT fault information is also sent to the ALM output 1.1.4 Structural features 1) The insulation structure of ceramic substrates enables you to mount IPM directly on the heat sink, allowing more efficient cooling. 2) The control signal terminals are lined up with the standard pitch of 2.54mm and can be connected by one connector. Using guide pins, you can also insert a connector for printed circuit board mounting.

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3) The main power source input (P, N), brake output (B), and output terminal (U, V, W) are all arranged nearby, providing a package structure that allows for easy wiring. 4) The main terminals can be connected to a large current supply with M5 screws reliably. 5) Electrical connections (made by screws or connectors) do not require soldering, allowing the ease of module removal if necessary. 1.2 R-IPM Characteristics 1.2.1 The electrical characteristics are equal to those of the 600V N-series and 1200V S-series IGBTs. - Low surge and low noise due to soft switching, contributing to EMC counter measures. - Total losses are reduced because of the improved trade-off between the VCE (sat) and switching loss characteristics. 1.2.2 Higher reliability - In comparison with the conventional Fuji IPMs (J-Series and N-Series IPMs), reliability has improved by significantly reducing the number of SMD components to 8. - The IGBT chips are protected from any abnormal overheating by Tj detection function. 1.2.3 Package compatibility 1) Medium-capacity series The main terminal, control terminal, and mounting hole positions of the 600V series 50A to 150A, and 1200V series 25A to 75A (6 in 1-package, 7 in 1-package) are compatible with those of the conventional Fuji IPMs (J-Series and N-Series IPMs ). 2) Large-capacity series The main terminal and mounting hole positions are compatible with those of the 600V series 200A to 300A, and 1200V series 100A to 150A (6 in 1-package, 7 in 1-package) J-IPM. The configuration of control terminals is the same as that of packages of 600V/150A or lower, and the same connector can be applied. Built-in brake IGBT is also available. 3) The height of the cover is lower than that of the conventional Fuji models, allowing for compactness while maintaining compatibility to utilize the R-series devices when replacing IPMs in older designs. 1.3 Definition of Type Name and Lot No. Type name = 7MBP50RA-060-01 8101 7 MBP 50 R A -060- 01 8 1 01 Lot No. Additional model number (if necessary) Additional number (01 to 99) Voltage rating Month of production Additional number of series 1: Jan Series name 9: Sep. Inverter IGBT current rating 0: Oct. Indicates IGBT-IPM N: Nov. Number of main elements D: Dec. 7 chip circuit with brake built-in Year of production 6 chip circuit without dynamic brake 8: 1998

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1.4 R-IPM Line Up

IGBT Current Type Name Package VCES Inverter Brake 7MBP50RA060 50A 30A 7MBP75RA060 P610 75A 50A 7MBP100RA060 100A 50A 7MBP150RA060 P611 150A 50A 7MBP200RA060 200A 75A 7MBP300RA060 P612

600V

300A 100A 6MBP50RA060 50A 6MBP75RA060 P610 75A 6MBP100RA060 100A 6MBP150RA060 P611 150A 6MBP200RA060 200A 6MBP300RA060 P612

600V

300A

NO BRAKE

7MBP25RA120 P610 25A 15A 7MBP50RA120 50A 25A 7MBP75RA120 P611 75A 25A 7MBP100RA120 100A 50A 7MBP150RA120 P612

1200V

150A 50A 6MBP25RA120 P610 25A 6MBP50RA120 50A 6MBP75RA120 P611 75A 6MBP100RA120 100A 6MBP150RA120 P612

1200V

150A

NO BRAKE

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Chapter 2 Explanation of Symbols/Terminology 2.1 Symbols in Block Diagram Symbol Description Vz The value of the Zener diode Vz that determines the signal H (off signal)

voltage of the control signal input terminal is specified in the electrical characteristics of the spec sheet.

RALM Resistance to determine the primary current of opto-coupler for insulated alarm output (ALM). About 10mA of current flows at Vcc=15V when an alarm is output. The value of RALM is specified in the electrical characteristics of the spec table.

2.1.1 Terminal symbols Terminal Symbol Description P N

Main power source Vd input terminal for the inverter bridge. P: + side, N: - side

B Brake output terminal: terminal to connect the resistor for regenerative operation declaration

U V W

3-phase inverter output terminal

(1) GND U (3) Vcc U

Control power source Vcc input in the upper arm U phase Vcc U: + side, GND U: - side

(4) GND V (6) Vcc V

Control power source Vcc input in the upper arm V phase Vcc V: + side, GND V: - side

(7) GND W (9) Vcc W

Control power source Vcc input in the upper arm W phase Vcc W : + side, GND W: - side

(10) GND (11) Vcc

Control power source Vcc input in the lower arm common Vcc: + side, GND: - side

(2) Vin U Control signal input in the upper arm U phase (5) Vin V Control signal input in the upper arm V phase (8) Vin W Control signal input in the upper arm W phase (13) Vin X Control signal input in the lower arm X phase (14) Vin Y Control signal input in the lower arm Y phase (15) Vin Z Control signal input in the lower arm Z phase (12) Vin DB Control signal input in the lower arm brake phase (16) ALM Alarm signal ALM output when the protection circuits are operating

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2.2 Technical Terms and Definitions

Term Symbol Description and Explanation Bus voltage VDC DC Voltage that can be applied between PN terminals DC Bus voltage (surge)

VDC

(surge) Peak value of the surge voltage that can be applied between PN terminals in switching

DC Bus voltage (short circuit) VSC DC source voltage between PN terminals that can be protected from

short circuits/overcurrent Collector-emitter voltage VCES Maximum collector-emitter voltage of the built-in IGBT chip and repeated

peak reverse voltage of the FWD chip (only IGBT for the brake) Reverse voltage VR Repeated peak reverse voltage of the FRD chip in the brake section

IC Maximum DC collector current for the IGBT chip ICP Maximum DC pulse collector current for the IGBT chip Collector current -IC Maximum DC forward current for the FWD chip

FRD forward current IF Maximum DC forward current for the FRD chip in the brake section

Collector power dissipation PC Maximum power dissipation for one IGBT element

Chip junction temperature Tj Maximum junction temperature of the IGBT and FWD chips during

continuous operation Control power source voltage VCC Voltage that can be applied between GND and each Vcc terminal

Input voltage Vin Voltage that can be applied between GND and each Vin terminal Input current Iin Current can be flown between GND and each Vin terminal Alarm signal voltage VALM Voltage that can be applied between GND and ALM terminal

Alarm signal current IALM Current that can be flown between GND and ALM terminal

Storage temperature Tstg Range of ambient temperature for storage or transportation, when there

is no electrical load Operating case temperature Top Range of case temperature for electrical operation (Fig. 1 shows the

measuring point of the case temperature Tc)

Isolating voltage Viso Maximum effective value of the sine-wave voltage between the terminals and the heat sink, when all terminals are shorted simultaneously.

Collector-emitter cutoff current ICES Collector current when a specified voltage is applied between the

collector and emitter of IGBT with all input signal H (=Vz)

Collector-emitter saturation voltage VCE (sat)

Collector-emitter voltage at a specified collector current when the input signal of the only elements to be measured is L (=0V) and the all other input of elements are H (=Vz)

Diode forward voltage VF Forward voltage at a specified forward current with all input signal H

(=Vz) Power supply current of P-line side pre-driver

ICCP Current between GND and each Vcc of the P side (upper arm side) control power source

Power supply current of N-line side pre-driver

ICCN Current between GND and Vcc of the N side (lower arm side) control power source

Vinth (on) Control signal voltage when IGBT changes from OFF to ON Input signal threshold voltage Vinth (off) Control signal voltage when IGBT changes from ON to OFF Input zenor voltage VZ Clamp voltage between GND and each Vin when the control signal is

OFF Over heating protection temperature level

TCOH Case temperature at which the Tc overheat protection circuit operates

Hysteresis TCH Difference between TcOH and the case temperature at which the Tc overheat protection is reset after lowering of Tc

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IGBT chips over heating protection temperature level

TjOH Junction temperature at which the Tj overheat protection circuit operates

Hysteresis TjH Difference between TjOH and the junction temperature at which the Tj overheat protection is reset after lowering of Tj

Overcurrent protective operation current

IOC IGBT collector current at which the overcurrent protection (OC) works

Overcurrent cut off time tDOC Shown in Fig. 2

Undervoltage protection level VUV Vcc at which the control source voltage lowering protection (UV) works

Hysteresis VH Difference between VUV and Vcc at which protection is reset with the rise of Vcc after UV operation

Signal hold time tALM Period in which an alarm continues to be output (ALM) from the ALM terminal after the N side protection function is actuated

Short circuit protection delay time

tSC Shown in Fig. 3

Limiting resistor for alarm RALM Built-in resistance limiting the primary current of opto-coupler for ALM

output t on t off t f Switching time

t rr

Shown in Fig. 4

Chip-case thermal resistance Rth (j-c) Chip-case thermal resistance of IGBT or FWD

Chip-fin thermal resistance Rth (c-f) Thermal resistance between the case and heat sink, when mounted on a

heat sink at the recommended torque using the thermal compound Screw torque mounting Screw torque when mounting IPM onto a heat sink

Screw torque terminal Screw torque for electrical connection of the main terminal

Weight Weight of a IPM IPM switching frequency f sw Range of the control signal frequencies for input into the control signal

input terminal Reverse recovery current Irr Shown in Fig. 4

Reverse bias safe operation area RBSOA Area of the current and voltage in which IGBT can be cutoff under

specified conditions during turn-off Eon IGBT switching loss during turn-on Eoff IGBT switching loss during turn-off Switching loss Err FWD switching loss during reverse recovery

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Fig. 1a Measuring point of Tc

P

N W V U

B

1 6 1 1 0 4 7

P610/ P611

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Fig. 1b Measuring point of Tc

P P

N N

WVU

B

1 4 7 10 16

P612

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Fig. 2 Overcurrent cut off time Fig. 3 Short circuit protection delay time Fig. 4 Switching time

Ic

IALM

tDOC

Ioc

IcIc Ic

IALM IALM IALM

Isc

trr

90%90%

10%

toffton

tf

Irr

Collector Current (Ic)

Input Signal (Vin) Vinth(on) Vinth(off)

tsc

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Chapter 3 Explanation of Functions 3.1 Built-in Electric Functions - IGBT and FWD for 3-phase inverter - IGBT and FRD for brake (Since 6MBP**RA060 contains no brake, the B terminal is not connected internally) - Drive function of all IGBT (7MBP**RA060 contains also the drive function of a brake) - Overcurrent (OC) protection function in all IGBT - Short circuit (SC) protection function in all IGBT - Undervoltage protection (UV) in drive circuits of all IGBT - Chip overheating protection function (TjOH) of all IGBT - Substrate temperature overheating protection function (TcOH) on the insulating substrate that mounts all IGBT/FWD - Alarm output function (ALM) to indicate the operation of protection when N-line side OC, SC, UV, TjOH, or TcOH operates 3.2 Explanation of Functions 3.2.1 IGBT and FWD for 3-phase inverter As shown in Fig. 5, IPM contains IGBT and FWD for 3-phase inverter and they are 3-phase connected inside the IPM. Connecting the main power source to the P and N terminals and the 3-phase output lines to the U, V, and W terminals completes main wiring. Connect a Snubber circuit to suppress the surge voltage. 3.2.2 IGBT and FRD for brake As shown in Fig. 5, IPM contains IGBT and FRD for brake and they are connected internally to the B terminal. By controlling the brake IGBT through connection of the brake resistance to the B terminal, energy can be dissipated while decelerating to suppress the rise of voltage between PN terminals. 3.2.3 Drive function of IGBT The drive function of all IGBT is contained and has the following characteristics. 1) Soft switching dv/dt of ON/OFF is controlled independently by the characteristics of drive elements without using a single gate resistance (Rg). 2) Single power source drive without any negative bias Since the cable between the drive circuit and IGBT is short and thus the wiring impedance is low, IPM can be driven without negative bias. The lower arm side has a common control GND and is driven by one power source. Four isolated sources are required to drive the whole IPM. 3) Error ON prevention Since a circuit is set up to ground the gate voltage with low impedance while OFF, error ON caused by the rise of VGE due to noise can be prevented.

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3.2.4 Overcurrent protection function (OC) 1) The overcurrent protection of IGBT is provided through detection of the collector current. If the Ic is exceeded Ioc level for a period of about 6 to 8 µs (tDOC), soft IGBT cutoff is performed. However, if the level falls below the Ioc level in a period shorter than tDOC, or if the OFF signal is entered in the tDOC period, the OC protection function does not work. Both OC and SC do not work while OFF. 2) The OC protection function is mounted on all IGBTs including the brake. 3) Small detection losses The detection current that flows in the current sense IGBT contained in the IGBT chip is very small as compared with Ic of the main IGBT. Therefore, it is possible to make detection loss smaller than that caused by the shunt resistance. 4) Built-in latch to prevent malfunctioning (common also to UV and OH) The whole OC protection function has a latch period of about 2ms, and even if the ON signal is entered during a latch period, IGBT in which the protection is actuated does not operate. Since the ALM of each phase is mutually connected in the lower side including the brake, all IGBTs on the arm lower side stop for a latch period if the lower arm side performs protection operation. 5) Soft cutoff (common also to UV and OH) Since soft IGBT cutoff occurs when the protection circuit operates, di/dt during cutoff is small and the surge voltage can be suppressed low. 6) Operation delay time (period in which protection operation is not carried out) Since the protection is actuated only if the Ic level is exceeded Ioc level continuously for a period of tDOC, malfunctioning due to instantaneous overcurrent or noise is not caused. 3.2.5 Short circuit protection function (SC) The SC protection function always cooperates with the OC protection function to suppress the peak current when load or arm is shorted. 3.2.6 Undervoltage protection (UV) The UV protection function carries out the soft IGBT cutoff if the control source voltage (Vcc) falls to VUV when the input signal is ON. Since the UV hysteresis is set, the alarm is canceled when Vcc returns to VUV + VH if the input signal is OFF.

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3.2.7 Case temperature overheating protection function (TcOH) 1) The TcOH protection function detects the insulating substrate temperature with the temperature detection elements set up on the same ceramic substrate as that on which the power chips (IGBT and FWD) are set up. The protection function is activated if the detected temperature exceeds the protection temperature level continuously (TcOH) for a specified period of time (about 1ms). If the input signal of the lower arm side IGBT is ON, the soft cutoff occurs and all IGBT on the lower arm side are held off for a latch period of about 2ms. 2) OH hysteresis The hysteresis TcH is set up also in TcOH to prevent chattering. If the case temperature Tc falls below TcOH-TcH after latch period of about 2ms, the protection is released. 3) Protection operation delay time To prevent malfunctioning due to noise, the OH protection function is actuated only if TcOH is exceeded continuously for a period of about 1ms (tDOH). 3.2.8 Chip temperature overheating protection function (TjOH) 1) The TjOH protection function detects the IGBT chip temperature with the temperature detection elements set up on all IGBT chips. The protection function is activated if the detection temperature exceeds the protection temperature level continuously (TjOH) for a specified period of time (about 1ms). If the input signal is ON, the soft IGBT cutoff occurs and IGBT stops for a latch period of 2ms. If the TjOH protection of the lower arm is actuated, all IGBTs on the lower arm side stop for a latch period of 2ms. 2) OH hysteresis The hysteresis TjH is set up also in TjOH to prevent chattering. If the chip temperature Tj falls below TjOH-TjH after latch period of 2ms and the input signal is OFF, the protection is released. 3) Protection operation delay time To prevent malfunctioning due to noise, the OH protection function is only activated if TjOH is exceeded continuously for a period of about 1ms (tDOH). 3.2.9 Alarm output function (ALM) 1) Alarms are output during latch period of each protection operation of the lower arm side OC, UV, TjOH, and TcOH. If Vin is ON even after the latch period passes, the protection and alarm are not reset. In such a case, the protection and alarm are reset immediately after Vin changes to OFF. 2) Upper arm No alarm is output when the protection operation (OC, UV, TjOH) is occurred in only the upper arm side. If the input signal is OFF after the latch period of 2ms passes, the protection is released. 3) Alarm mutual connection of the lower arm Since the alarm terminals of each drive on the lower arm side are connected mutually, all IGBT on the lower arm side including DB stop during alarm output. If the input signal is OFF after the latch period of 2ms passes, the protection is released. 3.2.10 IPM internal block diagram Fig. 5 shows an IPM internal block diagram (with brake circuit). Fig. 6 shows an IPM internal block diagram (without brake circuit).

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Fig. 5 IPM internal block diagram (with brake)

Pre-Driver

Pre-Driver

Pre-Driver

Pre-Driver

Pre-Driver

Pre-Driver

Pre-Driver

Over heating protection circuit

①

②

③

④

⑥

⑤

⑨

⑧

⑦

⑪

⑬

⑩

⑭

⑮

⑫

⑯RALM

U

V

W

N

B

PVccU

VccV

VinU

GNDU

VccW

VinW

GNDW

VinV

GNDV

Vcc

VinX

GND

VinY

VinZ

VinDB

ALM

VZ

VZ

VZ

VZ

VZ

1.5kΩ

VZ

VZ

Pre-drivers include following functions ① Amplifier for driver ② Short circuit protection ③ Under voltage lockout circuit ④ Over current protection ⑤ IGBT chip over heating protection

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Fig. 6 IPM internal block diagram (without brake)

Pre-Driver

Pre-Driver

Pre-Driver

Pre-Driver

Pre-Driver

Pre-Driver

Over heating protection circuit

①

②

③

④

⑥

⑤

⑨

⑧

⑦

⑪

⑬

⑩

⑭

⑮

⑫

⑯RALM

U

V

W

N

B

PVccU

VccV

VinU

GNDU

VccW

VinW

GNDW

VinV

GNDV

Vcc

VinX

GND

VinY

VinZ

ALM

VZ

VZ

VZ

VZ

VZ

1.5kΩ

VZ

Pre-drivers include following functions ① Amplifier for driver ② Short circuit protection ③ Under voltage lockout circuit ④ Over current protection ⑤ IGBT chip over heating protection

NC

NC

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3.3 Timing Chart The following figures show a timing chart of the protection function. Undervoltage protection (UV) -1 (Timing Chart 1)

① If Vcc is below VUV + VH during VCC is ON, an alarm is output. ② If the period in which Vcc falls below VUV is shorter than 5µs, the protection does not work (while Vin is OFF) ③ An alarm is output when a period of about 5µs passes after Vcc falls below VUV if Vin is OFF, and IGBT

maintains OFF. (No alarm is output if only Vcc of the upper arm falls below VUV) ④ If Vcc returns to VUV + VH after tALM passes, UV is reset after tALM passes if Vin is OFF and the alarm is also

reset simultaneously. ⑤ If the period in which Vcc falls below VUV is shorter than 5µs, the protection does not work (while Vin is ON). ⑥ An alarm is output when a period of about 5µs passes after Vcc falls below VUV if Vin is ON and the soft

IGBT cutoff occurs. (No alarm is output if only Vcc of the upper arm falls below VUV). ⑦ If Vcc returns to VUV + VH after tALM passes, UV is reset after tALM passes if Vin is OFF and the alarm is also

reset simultaneously. ⑧ An alarm is output if Vcc falls below VUV during Vcc is OFF.

Vcc

Vin

Ｉ c

I ALM

VUV+VH

VUV

<5uS <5uS

tALM

5uS

tALM

5uS

① ② ③ ⑤④ ⑥ ⑦ ⑧

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Under voltage protection (UV) -2 (Timing Chart 2)

① If Vcc is below VUV + VH during Vcc is ON, an alarm is output. (Until Vin changes to OFF) ② If Vcc returns to VUV + VH after tALM passes, UV and the alarm are reset simultaneously with the return of

VUV + VH if Vin is OFF. ③ Even if Vcc returns to VUV + VH after tALM passes, UV is not reset after tALM passes if Vin is ON. UV and the

alarm are reset simultaneously with Vin OFF. ④ If Vin is ON during Vcc is OFF, the alarm is output, and the soft IGBT cutoff occurs while Vcc is below VUV.

Vcc

Vin

I c

I ALM

VUV+VH

VUV

tALM

5uS 5uS

tALM

① ② ③ ④

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Overcurrent protection (OC) (Timing Chart 3)

① An alarm is output and the soft IGBT cutoff occurs when tDOC passes after Ic rises above Ioc. No alarm is

output for the upper arm. ② OC and the alarm are reset simultaneously if Vin is OFF when tALM passes. ③ An alarm is output and the soft IGBT cutoff occurs when tDOC passes after Ic rises above Ioc. No alarm is

output for the upper arm. ④ If Vin is ON when tALM passes, OC is not reset. OC and the alarm are reset simultaneously when Vin is

OFF. ⑤ If Vin changes to OFF before tDOC passes after Ic rises above Ioc, the protection function is not activated

and the normal IGBT cutoff occurs. ⑥ If Vin changes to OFF before tDOC passes after Ic rises above Ioc. The protection function is not activated

and the normal IGBT cutoff occurs.

Vｉｎ

Ｉ c

I ALM

Ｉｏｃ

tALM

tDOC tDOC

tALM

<tDOC <tDOC

① ② ③ ④ ⑤ ⑥

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Short circuit protection (SC) (Timing Chart 4)

① If the load shorts after Ic has started flowing and Ic exceeds Isc, the Ic peak is suppressed instantly. An

alarm is output and the soft IGBT cutoff occurs when tDOC passes. No alarm is output for the upper arm. ② OC and the alarm are reset simultaneously if Vin is OFF when tALM passes. ③ If the load is shorted and Isc is exceeded simultaneously with the start of flow of Ic, the Ic peak is instantly

suppressed. An alarm is output and the soft IGBT cutoff occurs after tDOC passes. No alarm is output for the upper arm.

④ If Vin is ON when tALM passes, OC is not reset. OC and the alarm are reset simultaneously when Vin is OFF.

⑤ If load is shorted after Ic started to flow and Ic exceeds Isc, the Ic peak is suppressed instantly. Then, if Vin changes to OFF before tDOC passes, the protection function is not activated and the normal IGBT cutoff occurs.

⑥ If the load is shorted simultaneously with the start of flow of Ic and Ic exceeds Isc, the Ic peak is suppressed instantly. Then, if Vin changes to OFF before tDOC passes, the protection function is not activated and the normal IGBT cutoff occurs.

Vｉｎ

Ｉ c

I ALM

Ｉｓｃ

Ｉｏｃ

tALM

tDOC tDOC

tALM

<tDOC <tDOC

① ② ③ ④ ⑤ ⑥

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Case temperature overheating protection (TcOH) (Timing Chart 5)

① An alarm is output if the case temperature Tc continuously exceeds TcOH for a period of about 1ms, and if

Vin is ON, the soft cutoff of all IGBT on the lower arm side occurs. ② If Tc falls below TcOH-TcH before tALM passes, the alarm is reset when tALM passes. ③ If Tc exceeds continuously TcOH for a period of about 1ms, an alarm is output. (While Vin is OFF) ④ If Tc has not fallen below TcOH-TcH when tALM passes, the alarm is not reset. When Tc falls below TcOH-TcH

after tALM passes, the alarm is reset.

Vｉｎ

I c

Tc

I ALM

TcOHTcOH-TcH

tALM1mS 1mS 1mStALM tALM

① ② ③ ④③

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IGBT chip overheating protection (TjOH)-1 (Timing Chart 6)

① An alarm is output and the soft IGBT cutoff occurs if the IGBT chip temperature Tj continuously exceeds

TjOH for a period of about 1ms. No alarm is output for the upper arm. ② If Tj falls below TjOH-TjH before tALM passes, OH and the alarm are simultaneously reset if Vin is OFF when

tALM passes. ③ An alarm is output if Tj continuously exceeds TjOH for a period of about 1ms, and if Vin is OFF, the

protection function is not activated. No alarm is output for the upper arm. ④ When Tj falls below TjOH-TjH after tALM passes, OH and the alarm are reset simultaneously if Vin is OFF.

Vｉｎ

I c

Tj

I ALM

TjOHTjOH-TjH

tALM1mS 1mS 1mStALM tALM

① ② ③ ④③

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IGBT chip overheating protection (TjOH)-2 (Timing Chart 7)

① If Tj exceeds TjOH and then falls below TjOH within about 1ms, OH does not operate regardless of whether

Vin is ON or OFF. ② If Tj exceeds TjOH and then falls below TjOH within about 1ms, OH does not operate regardless of whether

Vin is ON or OFF. ③ If Tj exceeds TjOH and then falls below TjOH for a period of about 3µs or longer, OH operates when the

period in which Tj exceeds TjOH passes about 1ms.

Vｉｎ

I c

Tj

I ALM

TjOHTjOH-TjH

1mS <1mS 1mS

3uS<

<1mStALM tALM

① ② ③

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Chapter 4 Examples of Application Circuits 4.1 The Entire Circuit Fig. 7 shows an application circuit example (with brake type).

+10uF

0.1uF

20kΩ

Vcc

IF

①

②

③

④

⑥

⑤

⑨

⑧

⑦

⑪

⑬

⑩

⑭

⑮

⑫

⑯

U

V

W

N

B

P

M +

AC200V

+10uF

0.1uF

20kΩ

Vcc

IF

+10uF

0.1uFVcc

IF

20kΩ

+10uF

0.1uF

20kΩ

Vcc

IF

+10uF

0.1uF

20kΩ

IF

+10uF

0.1uF

IF

20kΩ

+

0.1uF

IF

20kΩ

10uF

5V 1k

IPM

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Fig. 8 shows an application circuit example (no brake type).

+10uF

0.1uF

20kΩ

Vcc

IF

①

②

③

④

⑥

⑤

⑨

⑧

⑦

⑪

⑬

⑩

⑭

⑮

⑫

⑯

U

V

W

N

B

P

M+

AC200V

+10uF

0.1uF

20kΩ

Vcc

IF

+10uF

0.1uFVcc

IF

20kΩ

Vcc

+10uF

0.1uF

20kΩ

IF

+10uF

0.1uF

IF

20kΩ

+

0.1uF

IF

20kΩ

10uF

5V 1k

IPM

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4.2 Precautions 4.2.1 Control power source As shown in Fig. 7 and Fig. 8, four isolated control sources, upper arm side=3 and lower arm side=1, are required. If you use a standard power supply unit, do not connect the GND terminal on the power output. If you connect the GND terminal to + or – of the output, a malfunction may result because each power source is connected to the ground on the power source input. Reduce the stray capacitance between each power source and the ground as much as possible. 4.2.2 Structural isolation among four power sources (input connectors and PC boards) Isolation is needed between four power sources each and the main power source. Since a large amount of dv/dt is applied to this isolation during IGBT switching, keep sufficient clearance between the components and the isolation. (2mm or more is recommended) 4.2.3 GND connection The control power source GND on the lower arm side and the main power source GND are connected inside the IPM. Never connect them outside the IPM. If you connect them outside the IPM, loop currents generated inside and outside IPM flow to the lower arm and cause malfunctioning of the opto-coupler and the IPM. The input circuit of the IPM may also be damaged. 4.2.4 Control power source capacitor Capacitors 10µF and 0.1µF connected to each control power source as shown in Fig. 7 and Fig. 8 are not intended for smoothing the control power sources, but for compensating the wiring impedance up to the IPM. Capacitors for smoothing are needed separately. Since transient variations may be caused in the wiring impedance from the capacitor to the control circuit, connect the capacitor as close to the IPM control terminal as possible. As for the electrolytic capacitors, select those capacitors with lower impedance and better frequency characteristics. In addition, connect capacitors with better frequency characteristics, such as film capacitors, in parallel. When capacitors are connected between input and GND terminals, pay attention to longer delay time after signals inputted to primary side of opto-coupler. 4.2.5 Pull-up of the signal input terminal Pull up the control signal input terminal to Vcc with a resistor of 20kΩ. Even if you do not use the brake in the brake built-in IPM, pull up the DB input terminal also. If you do not pull up the terminals, a malfunction may be caused by dv/dt. 4.2.6 Snubber Connect the snubber to the PN terminals directly. For the P612 package set up the snubber for each PN terminal on both sides. 4.2.7 B terminal In the case of the 6 in 1 package (without brake) type, connecting the B terminal to the N or P terminal is recommended. Avoid the use while the B terminal is floating.

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4.3 The Opto-couplers 4.3.1 Opto-coupler for control input 1) Opto-coupler rating

Use those photo-couplers that satisfy the following characteristics - CMH=CML > 15kV/µs or 10kV/µs - tpHL=tpLH < 0.8µs - tpLH-tpHL = -0.4 to 0.9µs - CTR > 15%

Example: Product of HP: HCPL-4504, HCPL-4506 Product of Toshiba: TLP759 (IGM)

Note: also the safety standards such as UL and VDE, should be applied. 2) Wiring between the opto-coupler and the IPM Make the wiring between the opto-coupler and the IPM as short as possible to reduce the wiring impedance between the opto-coupler and the IPM control terminal. Separate each wire between the primary and secondary circuits so that floating capacitance to be small enough since a strong dv/dt is applied between the primary and secondary circuits. 3) Light Emitting Diode driving circuit The dv/dt withstand capability of the opto-coupler is also affected by the input light emitting diode driving circuit. The driving circuit example is shown in Fig. 9.

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Fig. 9 Opto-coupler input circuit 1. Good example: Totem pole output IC

Current limiting resistor on the cathode side of the photo diode 2. Good example: Photo diode A-K is shorted by transistors C-E (example which is particularly fit for opto-coupler OFF) 3. Bad example: Open collector 4. Bad example: Current limiting resistor on the anode side of the photo diode

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4.3.2 Opto-coupler for alarm output 1) Opto-coupler rating Though you can use general-purpose opto-couplers, we recommend using the opto-couplers with the following characteristics. - 100% < CTR < 300% - One-element packed type Example) TLP521-1-GR rank Note: Also the safety standards such as UL and VDE, should be applied. 2) Input current limiting resistor The current limiting resistor of the light emitting diode in the opto-coupler input is contained in the IPM. RALM=1.5kΩ and if connected directly to Vcc, about 10mA of IF flows with Vcc=15V. Therefore, there is no need to connect any current limiting resistor. However, if a large amount of current Iout > 10mA is needed on the opto-coupler output, increase the CTR value of the opto-coupler to a required value. 3) Wiring between the opto-coupler and the IPM Since a large amount of dv/dt is applied also on the photo-coupler for alarm, the same note as described in 4.3.1-2) should be taken. 4.4 Connector You can connect the control circuit to the R-IPM entirely by using one type of connectors. The connector should be Au-plated electrode and 2.54mm of pitch. Recommended connector: Hirose Electric MDF7-25S-2.54DSA

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Chapter 5 Cooling Design 5.1 Junction Temperature To safeguard operation of the IGBT, make sure the junction temperature Tj does not exceed Tjmax. Cooling should be designed in such a way that ensures that Tj is always below Tjmax even in abnormal states such as overload operation as well as under rated load. Operation of IGBT in temperatures higher than Tjmax could result in damage to the chips. In the R-IPM, the TjOH protection operates when the chip temperature of IGBT exceeds Tjmax. However, if the temperature rise is too quickly, the chip may not be protected. Likewise, notice that the chip temperature of FWD should not exceed Tjmax. For concrete designs, refer to the following material. “IGBT MODULE N SERIES APPLICATION MANUAL REH982” Contents: -Power dissipation loss calculation -Selecting heat sinks -Heat sink mounting precautions 5.2 Precautions for Heat Sink Selection How to select heat sinks is described in the manual REH982. Note also the following point. Flatness of the heat sink surface Flatness between mounting screw pitches: 0 to +100µm, roughness: 10µm or less If the heat sink surface is concave, a gap arises between the heat sink and the IPM, leading to deterioration of cooling efficiency. If the flatness is +100µm or more, the copper base of the IPM is deformed and cracks could be caused in the internal isolating substrates.

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Chapter 6 Precautions Using R-IPM

6.1 Main Power Source Vd 6.1.1 The Voltage Range There are four items of the IPM spec (VDC, VDC (surge), VSC, and VCES) to specify the voltage of the main power source. (For their definitions, refer to Chapter 2. 2. Technical Terms and Definitions) The following shows the voltage range of the main power source obtained from these four items. - Variation range of the main source: 400V or less for the 600V series 800V or less for the 1200V series - Brake operation range: 400V or less for the 600V series 800V or less for the 1200V series - The protection operation range of the main power source of inverters is 400V or less for the 600V series, and 450V (=VDC) or less if the rise within the protection operation delay time is included (For the 1200V series, 800V or less, and 900V or less respectively). - The maximum surge voltage during switching is 500V (=VDC (SURGE)) or less for the 600V series and 1000V or less for the 1200V series. For all ranges above, mount snubber circuits as close to the PN terminals as possible so that these values or less can be obtained. - The surge voltage is caused in the wiring inductance inside the IPM by di/dt during switching. The circuits structure and elements are designed in such a way that this maximum surge voltage is suppressed to 600V (=VCES) or less for the 600V series (1200V or less for the 1200V series). 6.1.2 External noise The IPM is protected internally against external noise. However, the possibility of malfunction cannot be totally eliminated, depending on the type and intensity of noise. Take sufficient counter measures against noise, which may adversely affect the IPM. 1) For noise from outside the equipment Apply the noise filter on the AC line, or isolated ground. The addition of capacitors of 1000pF or less between the signal input of all phases and signal GND 2) For noise inside the equipment Before the rectifier: Apply the same counter measures as the above After the rectifier: Apply snubber circuits on the PN line (in case of multiple converters connected to one rectifier converter) 6.2 Control Power Source Vcc 6.2.1 The voltage range The undervoltage protection function UV is available for Vcc. The following shows the range of voltage used.

1) 0V or less (applying the reverse voltage) The control circuit is damaged. Never apply reverse voltage. 2) 0V to VUV + VH, VUV to 0V The control circuit is not damaged, but does not operate. Since the off-bias of the IGBT gate is not sufficient in this range, error ON of IGBT could be caused by dv/dt if the main power source is applied.

32 REH983

Apply the main power source after the voltage reaches 13.5V or higher. 3) VUV + VH to 13.5V, 13.5V to VUV The control circuit operates. However, power loss increases due to the lack of drive voltage. Because the protection characteristics are changed, the circuit may be damaged due to the insufficient protection. Take care to avoid operation in this range. 4) 13.5V to 16.5V Voltage range required for the IPM to operate normally. We recommend using the IPM at voltage of around 15V. 5) 16.5V to 20.0V The control circuit can operate. However, because the protection characteristics are changed due to

excessive drive source voltage for IGBT and FWD, the circuit may be damaged depending on the load. 6) Over 20.0V Take care to avoid operation in this range. Never apply a Vcc of, 20V or more; the control circuit could be damaged.

6.2.2 Voltage ripple 13.5V to 16.5V shown in 6.2.1 includes the Vcc voltage ripple. The protection of UV or OC may not operate as expected due to excess or lack of the drive voltage even if the Vcc fluctuates in such a short period of time. When designing a control power source, make sure to verify that the voltage ripple is suppressed sufficiently low. Also take care so that noise on the power source is suppressed low. 6.2.3 Power source sequence As shown in 6.2.1, apply the main power source after Vcc reaches the range of 13.5V to 16.5V. In the worst case, if the main power source is applied before the control source voltage reaches a specified value, the IPM may be damaged because the protection is not ready to operate. 6.2.4 Alarm during power source ON and OFF An alarm is output if the voltage is below VUV + VH during power source ON. Alarm is reset if the voltage rises above VUV + VH. However, if the ON signal is being entered, the alarm is not canceled, so it is necessary to take appropriate action by shutting down the control circuit. Likewise, an alarm is output during power source OFF, you need to take the above-mentioned appropriate action. 6.3 Protection Operation 6.3.1 Common in protection operation 1) Range of protection The protection contained in the IPM is designed for non-repetitive abnormal phenomena. Do not apply stress steadily that exceeds the maximum rating. 2) Countermeasures for alarm output If an alarm is output, stop the input signal into the IPM immediately to stop the equipment. The protective function of the IPM is reset automatically, and so the protection operation of the IPM alone cannot protect the IPM and the equipment. Restart the device after removing the causes of the errors.

33 REH983

6.3.2 Examples of OC operation due to load errors and precautions 1) Overload If the IPM output current increases due to load motor abnormalities, the OC operates. The soft IGBT cutoff occurs after tDOC passes. An alarm is output in case of the lower arm OC operation. 2) Load short circuit If the motor or IPM output terminal is shorted, the Ic peak is suppressed instantly to prevent the flow of excessive current. If the condition of the short circuit is not cleared in a period of tDOC, the soft IGBT cutoff occurs, and an alarm is output, in case of the lower arm. 3) Starting with load short circuit The OC has a delay time of about 10µs. If the input signal pulse width is shorter than this, the OC does not operate. Therefore, if the input signal pulses of 10µs or less are continuing when starting with load shorted, short circuits occur continuously and the chip temperature of IGBT rises rapidly. In such a case, TcOH is not appropriate because the rise of case temperature is delayed. When the chip temperature exceeds Tjmax, TjOH operates to protect the chip from overheating. However, because TjOH is also delayed by about 1ms, if the temperature rises rapidly the activation of the protection function may be too late to prevent the chip from being damaged. By setting the pulse width of the initial input signal during startup to 10µs or more, overcurrent due to short circuits can reliably be detected and errors can be detected by alarm output by the OC protection operation. 4) Arm short circuit If the ON signal is entered simultaneously for the upper and lower arms, IGBT of the upper and lower arms are turned ON simultaneously, resulting in an arm short circuit. If this occurs, the Ic peak is immediately suppressed. After tDOC passes, the soft IGBT cutoff occurs and an alarm is output. 5) Ground short If ground short is caused due to insulation abnormalities of the motor and an overcurrent flows to the lower arm, the soft IGBT cutoff occurs and an alarm is output. If the overcurrent flows to the upper arm, the soft IGBT cutoff occurs but no alarm is output. The state of self-cutoff is maintained for about 2ms. If the input signal is not stopped, the protected state is released after 2ms. Since the AC input phase is generally inverted after 10ms, short circuit currents flow to the lower arm, and at this time an alarm is output. 6.3.3 Alarm on the upper arm side No alarm is output from the upper arm side. The OC, SC, and UV are set up for all IGBT including the brake and have the latch period of 2ms. The alarm output is designed for one system on the lower arm side and is not designed for the upper arm side. As a result, no alarm is output if the protection function operates only on the upper arm side. However, the upper-phase current lacks during latch period of 2ms, and when the phase moves to the lower phase, an overcurrent flows to the lower arm and then an alarm is output by the OC operation. 6.3.4 Overcurrent of FWD The OC and SC detect the collector current for their operation, but do not detect the anode current of FWD. Therefore, the protection function is not activated when abnormal currents flow only in FWD.

34 REH983

6.3.5 Temperature detection location for the case temperature protection (TcOH) The temperature detection device for the case temperature protection is located on the ceramic substrate on which power chips are mounted. The location of the temperature detection device on the substrate is near the lower arm X phase IGBT and at one edge of the substrate. TcOH is designed to protect the IPM when the temperature of the whole substrate rises. When overheating is concentrated on one main device, the chip temperature protection TjOH in 6.3.6 is employed. 6.3.6 Chip temperature protection (TjOH) If the current flows concentrated on one or two IGBTs, such as motor lock mode, the chip temperature rises rapidly and the case temperature protection function is not appropriate. In this case, the chip is protected from thermal damage by the temperature detection elements installed in the IGBT chip. The chip temperature protection function is installed in all IGBT including the brake. 6.4 Reliability 6.4.1 Power cycling capability Lifetime of semiconductor product is not permanent. Accumulated fatigue by thermal stress resulting from rising and falling temperatures generated within the device may shorten the lifetime of the components. Narrow the width of temperature variations as much as possible. 6.4.2 Reliability test items

Item Referenced standard Method/Condition Thermal shock JIS C7021 A-3 0/100oC, 5min each, 10 cycles Temperature cycle JIS C7021 A-4 –40/RT/125oC, 60/30/60min, 100 cycles Shock JIS C7021 A-7 1000G, 0.5ms, XYZ each 3 times Vibration JIS C7021 A-10 10G, 10 to 500Hz, 15min, XYZ each 6h

Terminal tensile strength JIS C7021 A-11 10N to the direction perpendicular to the control terminal

Tightening strength EIAJ ED-4701 A112 Method 2 (Screw torque test), 3.5Nm Intermittent operation JIS C7021 B-6 Rated Pc, 2s/18s (ON/OFF), 3000 cycles High temperature reverse bias JIS C7021 B-8 125oC, VDCX0.8, 1000h High temperature storage JIS C7021 B-10 125oC, 1000h Low temperature storage JIS C7021 B-12 -40oC, 1000h Humid storage JIS C7021 B-11 85oC, 85%, 1000h Pressure cooker EIAJ ED-4701 B-123 2atm, 121oC, 100%, 20h

6.5 Others 6.5.1 Precautions for storage/transportation 1) Store the IPM at room temperature of 5 to 35oC and humidity level of 45 to 75%. 2) Avoid rapid temperature and humidity changes. In particular, do not allow condensation on the IPM surface. 3) Avoid locations where corrosive gases are generated or dust is present. 4) Take care so that no load is placed on the IPM. Particularly, the control terminal should not be bent. 5) Store IPM with unprocessed terminals, and with no load on them. 6) Do not drop or subject an IPM to shock during transportation.

35 REH983

6.5.2 Precautions for usage and installation into equipment 1) Do not drop an IPM or subject it to shock during installation into devices, transportation, or driving. 2) Take care so that no load is placed on the IPM. Particularly, the control terminal should not be bent. 3) Do not perform soldering by re-flow on the main terminal and control terminal. Take care to prevent any influence to the IPM by heat, flux, and washing solutions used for soldering other components. 4) Avoid rapid temperature and humidity changes. In particular, do not allow condensation on the IPM surface. 5) Avoid locations where corrosive gases are generated or dust is present. 6) IGBT and IC contained in the IPM are easily destroyed by static electricity. Take care to prevent high voltage static electricity to the main terminal and control terminal. 7) Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. 8) When using the IPM in your equipment, you are requested to take adequate safety counter measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the IPM becomes faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 9) All applications described in this manual exemplify the use of the IPM for reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is granted. 10) If you need to use the IPM for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric to obtain prior approval. - Transportation equipment (mounted on cars and ships) - Space equipment - Medical equipment - Nuclear control equipment - Submarine repeater equipment 11) If you have any question about any portion in this manual, ask to Fuji Electric before using the IPM.