future technology magazinefuture technology magazine 21-i emea in association with my-boardclub.com:...

F U T U R E T E C H N O L O G Y M A G A Z I N E

21-i EMEA

IN ASSOCIATION WITH MY-BOARDCLUB.COM: THE DESIGNERS’ SITE FOR FREE DEVELOPMENT BOARDS

APPLICATIONS• Robots• Medical devices• Industrial machinery• Smart meters• Gaming equipment • Home appliances

FEATURES• 1 to 6 contact positions• 3.96mm or 7.92mm pitch• 630V AC/DC voltage rating• Rated for 30 or 50 mating cycles• Cable sizes: AWG 16 to AWG 22

High-current wire-to-board connector provides for secure locking

The main connector range consists of cable-mount female crimp sockets and board-mount vertical and right-angle male headers. The connectors can handle a maximum current of 15A. Hirose also supplies in-line versions of the connector, and a waterproof DF63W series.

The connectors’ form factor enables the designer to achieve space savings. The three-position header only occupies board space of 88mm2 due to its small pitch.

Secure locking is assured by a robust lock which gives a clear tactile click when mated. This confirms the connector is fully engaged. The lock is on the center of the housing, eliminating the risks of uneven locking and cable entanglement, which are common with side locks. This also enables multiple connectors to be mounted close together when side-by-side.

The header features square male pin contacts which have a wide conductive surface area of 1.14mm2 on each side to carry high currents. Each contact is protected by housing walls to avoid the risk of short circuits and to prevent it from being touched.

The cable-mount female socket housing uses crimp contacts which have an internal multi-point contact structure to ensure good contact wipe and high contact reliability. The design of the housing base is tapered to allow resin sealing up to 5mm high. The resin stopper, which is a step underneath the lock, stops the resin rising too far.

Hirose has introduced the DF63 series of small, high-powered wire-to-board connectors for use in industrial equipment which must achieve high levels of reliability.

[email protected]

APPLICATIONS• IoT devices• Home appliances• Healthcare devices• Industrial sensor modules• Control panels • Industrial automation• Building automation• Medical and healthcare equipment• Consumer HMIs

FEATURES• Ultra low-power consumption: – 64μA/MHz operating current – 250nA software standby

current with faster than 5µs wake-up

• Memory provision: – 128/256kbytes of Flash

memory – 32kbytes of SRAM with ECC – 8kbytes of data Flash to store

data in EEPROM emulation mode

• Scalable packages: 48- to 100-pin• Internal voltage regulators• 12-bit ADC and 12-bit DAC• Low-power analog comparator• Real-time clock• CAN interface• Supply-voltage range: 1.6V to 5.5V• Supports e2 studio integrated

development environment

32-bit MCUs offer best-in-class power consumption and innovative capacitive

touch-sensing capability

The RA2L1 MCUs are based on the Arm® Cortex®-M23 core operating at up to 48MHz. The RA2L1 MCUs are supported by an easy-to-use Flexible Software Package (FSP) and Renesas’ partner ecosystem, providing software and hardware building block solutions which work out-of-the-box.

The RA2L1 MCUs offer ultra low-power consumption, employing an advanced power and clock-gating feature and Renesas’ 110nm low-power fabrication process. In benchmark testing, the MCUs gained an EEMBC® ULPMark™ score of 304 at 1.8V, a best-in-class power rating. This means that in many end products users can achieve average power consumption close to standby levels, extending run-times in battery-powered applications.

The advanced capacitive touch-sensing IP in the RA2L1 MCUs supports sensing through acrylic or glass panels more than 10mm thick. This is enough for use in household equipment which has thick doors or partitions. The MCU also implements proximity sensing and 3D gestures, a useful capability in applications which need to restrict touches for hygiene or safety reasons.

The RA2L1 capacitive-touch noise tolerance meets the requirements of IEC/EN61000-4-3 level 4 for radiated emissions and EN61000-4-6 level 3 for conducted emissions, to ensure reliable operation with minimal sensing error.

The RA2L1 Group products are highly integrated, incorporating analog, communications, and timing peripherals, and safety and security functions.

The RA2L1 MCUs also offer an IEC 60730 self-test library, and feature integrated safety functions which provide confirmation of normal operation. Developers can easily use these safety functions to perform MCU self-diagnostics. In addition, the RA2L1 includes an AES cryptography accelerator, true random number generator, and memory protection units, which provide the fundamental blocks required to develop a secure IoT system.

The RA2L1 MCUs with FSP allow developers to re-use legacy code, and combine it with software from partners across the Arm ecosystem to speed implementation of complex connectivity and security functions. The FSP includes the FreeRTOS real-time operating system and middleware to provide a device-to-cloud option for developers.

Renesas has extended its RA Family of microcontrollers, launching 20 new RA2L1 Group products to provide a new option for OEMs developing IoT and Human-Machine

Interface (HMI) applications which need to minimize power consumption in operating and standby modes. The RA2L1 MCUs integrate a new capacitive touch-sensing unit which offers superior sensitivity, to support operation through thick overlays as well as enabling

a touchless proximity-sensing user interface.

[email protected]

DO YOU WANT A FREE DEVELOPMENT BOARD FOR THIS PRODUCT?

www.my-boardclub.com the designers’ site for free development boards

The EK-RA2L1 evaluation kit enables users to develop embedded systems using the RA2L1 MCUs and Renesas FSP and e2 studio tools. The kit is supplied with a ‘Quick Start’ example project to accelerate evaluation.Orderable Part Number: EK-RA2L1

Orderable Part Number: GaNdalf II



APPLICATIONS• AC-DC converters• Power supply units• Battery chargers

FEATURES• Infineon 1EDFI60N12AF isolated

gate driver • Infineon IPW60R017C7, a 600V,

17mΩ silicon MOSFET • Murata NXJ1S1212 1W isolated

DC-DC converter offering 2.5pF isolation capacitance

• Myrra 370µH custom boost inductor

Acclaimed GaN switch-based PFC reference design board now features 2kW capability and >99% efficiency

The new version, dubbed GaNdalf II, offers improved peak efficiency of 99.2%, and a new high power rating of 2kW, up from the first GaNdalf board’s 1kW limit.

The drive for efficiency has led designers to evaluate various bridgeless PFC circuit topologies, which remove the rectifying diode bridge and its associated power losses from the input of the PFC stage. In the GaNdalf II board design, Future Electronics has implemented a bridgeless totem pole PFC topology which offers very high efficiency and a low component count. Conventional silicon superjunction MOSFETs perform poorly in this hard-switched topology, so Future Electronics bases the PFC circuit on Infineon GaN switches, which are notable for zero reverse-recovery energy.

The GaNdalf II system has a modular architecture which will allow for easy comparison of GaN switches from various manufacturers, mounted on plug-in daughtercards. Each daughtercard features GaN switches in a half-bridge configuration. At launch, the GaNdalf II board’s half-bridge daughtercard has Infineon IGOT60R070D1 GaN High Electron Mobility Transistor (HEMT) devices. These 600V-rated, top-side cooled Infineon GaN power switches offer low on-resistance of 70mΩ, helping GaNdalf II to achieve ultra-high efficiency across a wide load range.

The GaNdalf II board benefits not only from the superior operating characteristics of the GaN power components, but also from digital control enabled by a high-performance, dual-core dsPIC33CH digital signal controller from Microchip. This device is an excellent platform for digital control, and provides spare processing capacity for additional functions such as system monitoring and communication.

Operating from a universal mains input range of 85V to 265V AC, the GaNdalf II board provides a 400V DC output at a power factor of >0.99. Total harmonic distortion is <10%.

Future Electronics has launched a new, improved version of its renowned GaNdalf development platform, which provides a blueprint for high-performance bridgeless Power Factor Correction (PFC) circuit designs based on Gallium Nitride (GaN) power switches.

[email protected]

APPLICATIONS• Battery protection• Brushless DC motor control • Server power supplies

FEATURES• 17nC gate charge• 100% avalanche tested at 190A• <1μA leakage current at 25°C• Low spiking and ringing • Optimized for 4.5V gate drive• 175°C maximum junction

temperature

New benchmark for MOSFET performance as LFPAK56-packaged device on-resistance reaches 0.57mΩ

Benefiting from Nexperia’s NextPowerS3 technology, the 25V PSMNR51-25YLH achieves its market-leading performance without compromising other important parameters such as maximum drain current, Safe Operating Area (SOA) or gate charge.

MOSFETs which have very low on-resistance are required in many applications such as ORing, hot-swap operation, synchronous rectification and motor control to reduce conduction losses and increase efficiency. Some devices with low on-resistance values, however, suffer from reduced SOA, a measure of the ruggedness of the MOSFET, and reduced maximum drain-current ratings, as their low resistance is the result of shrinking the die cell pitch.

Nexperia’s PSMNR51-25YLH MOSFET, by contrast, offers a high maximum drain current rating of up to 380A. This parameter is especially important in motor-control systems: when the motor stalls, current can surge to very high levels for short periods. The PSMNR51-25YLH withstands these current surges to maintain safe and reliable operation.

In addition, some MOSFET manufacturers only provide computed maximum drain-current values, whereas Nexperia demonstrates continuous current capability up to 380A on a test board.

The PSMNR51-25YLH is housed in Nexperia’s 5mm x 6mm Power-SO8 compatible LFPAK56 package. This features a high performance copper-clip construction which absorbs thermal stresses, increasing quality and reliability.

Other low-voltage parts in the NextPowerS3 family which offer low on-resistance include the PSMNR58-30YLH, PSMNR90-40YLH, PSMN1R0-40YSH, PSMNR70-40SSH and PSMN1R0-40SSH.

Nexperia has introduced an addition to its broad family of low-voltage MOSFETs which sets a new standard for on-resistance of 0.57mΩ at a drain-source voltage of 25V.

[email protected]

APPLICATIONS• Automotive systems: – Electric and hybrid electric

vehicles – Engine ECUs – ADAS – Power train – Motors, pumps and fans – Brakes• Industrial systems: – Automation – Servers – LED drivers – Power-supply modules

FEATURES• Metal composite core with

magnetic shielding• Low acoustic noise• High withstanding voltage

characteristics

High-current power choke coils offer robust performance in demanding

automotive applications

ETQP8 coils are available with inductance values ranging from 0.33μH to 4.7μH. They are ideal for noise filters in motor drives and in ECUs’ DC-DC converters as well as for voltage regulators and buck-boost converters.

The AEC-Q200 qualified ETQP8 coils have a footprint of 12mm x 13.2mm. Due to their space-saving metal composite monolithic structure they are up to 70% smaller than other technologies on the market.

In comparison to standard ferrite products, ETQP8 coils offer various performance advantages including tolerance of operating temperatures up to 160°C, and vibration resistance up to 30g.

The inductors also offer high current-bias characteristics without displaying hard saturation behavior. They are rated for currents up to 53A, and meet the EMC compliance requirements of new automotive designs.

Panasonic Industry’s ETQP8 series of power choke coils give automotive design engineers the opportunity to save space and reduce weight while maintaining robust and

reliable performance in the next generation of Electronic Control Units (ECUs).

[email protected]

APPLICATIONS• Power converters• Switch-mode power supplies• Industrial motor drives

FEATURES• High-voltage rail up to 1,200V• Rail-to-rail outputs• Gate-driving voltage up to 26V• ±100V/ns dV/dt transient

immunity over the operating-temperature range

• 3.3V or 5V TTL/CMOS inputs with hysteresis

• Wide-body SO-8W package

Fast 4A gate driver for SiC MOSFETs offers galvanic isolation

Capable of carrying a sink/source driver current of up to 4A, the STGAP2SICS provides 6kV of galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry.

The gate driver is available in two different configurations. The configuration with separate Output pins allows the user to independently optimize turn on and turn off operations with gate resistors.

The configuration which features a single Output pin and Miller clamp function prevents gate spikes, which can occur when operating at high frequency. Both configurations offer flexibility and help the designer to keep the number of external components required to a minimum.

The STGAP2SICS under voltage lock out feature is optimized for the protection of SiC MOSFETs. The thermal shut-down capability also facilitates the design of highly reliable systems. The provision of dual Input pins enables the selection of signal polarity control, and the implementation of hardware interlocking protection to avoid cross-conduction in the event of a malfunction in the power controller.

Input-to-output propagation delay is less than 75ns, which provides for accurate PWM control of power switching. A standby mode is available to reduce idle power consumption.

The STGAP2SICS is a single gate driver which offers characteristics ideal for driving Silicon Carbide (SiC) MOSFETs in power circuits which require very high efficiency or

high-frequency switching.

[email protected]

Demonstration board for the STGAP2SICS isolated 4A single gate drive IC. Orderable Part Number: EVALSTGAP2SICS



APPLICATIONS• White goods • Industrial systems • Medical equipment • Telecoms and server power

supplies • Motor control in: – Vacuum cleaners – Drones – Power tools – Home/office automation

equipment – Non-implantable medical

devices

FEATURES• Optimized Qgd/Qgs ratio • 1.1V minimum gate-source

threshold voltage• Maximum drain current: – 48A in Channel 1 – 47A in Channel 2• 100% Rg and UIS tested

Integrated 40V MOSFET half-bridge ideal for compact and efficient power stages

The SiZ240DT offers best-in-class on-resistance values and low gate charge, and can be used to realize power-system designs which offer a combination of high power density and high efficiency in synchronous buck power converters, DC-DC converters, wireless chargers and switch-mode power supplies. The PowerPAIR MOSFET is also ideal for use in the power stage of motor drives.

The two TrenchFET® MOSFETs in the SiZ240DT are internally connected in a half-bridge configuration. The Channel 1 MOSFET, which is typically used as the control switch in a synchronous buck converter, provides maximum on-resistance of 8.05mΩ at 10V and 12.25mΩ at 4.5V.

The Channel 2 MOSFET, which is typically a synchronous switch, features on-resistance of 8.41mΩ at 10V and 13.30mΩ at 4.5V. These values are as much as 16% lower than those of the closest competing products.

Featuring low gate charge of 6.9nC in the Channel 1 MOSFET and 6.5nC in the Channel 2 MOSFET, the SiZ240DT produces a figure-of-merit, on-resistance times gate charge, some 14% lower than that of the next best device in its class.

The integrated MOSFET features a wire-free internal construction which minimizes parasitic inductance. This enables the implementation of high-frequency switching to reduce the size of external magnetic components.

Vishay’s new SiZ240DT is a half-bridge power stage which integrates dual 40V N-channel high- and low-side MOSFETs in one compact PowerPAIR® package which

has a footprint of just 3.3mm x 3.3mm.

[email protected]

APPLICATIONS• Motor-control systems in: – Smart homes – Industrial automation – Building automation

FEATURES• Scalable from 64- to 100-pin

LQFP packages• 64kbytes of RAM • Up to 512kbytes of Flash• 32-bit PWM timer • 250µs sampling period when

used with the motor control solution bundle

• Six-channel programmable gain amplifier

• Supports IEC 60730 standard for functional safety in home appliances

New MCUs support predictive maintenance solution for motors based

on Google TensorFlow Lite

The RA6T1 MCUs mark a breakthrough in the field of predictive maintenance for motors: for the first time, Renesas has built in support for Google’s TensorFlow™ Lite machine learning platform into its motor control and predictive maintenance solution. This makes it easier for designers of motors to implement Artificial Intelligence (AI) for automatic detection and analysis of anomalies which could indicate the early signs of motor failure. OEMs’ customers are helped to improve their predictive maintenance processes and reduce maintenance costs.

Based on the Arm® Cortex®-M4 core, the new RA6T1 32-bit MCUs operate at a clock frequency of 120MHz. The MCUs offer a rich set of peripherals optimized for high-performance motor control. For instance, the MCU’s 12-bit ADC has a maximum speed of 0.4µs, and a sample/hold function which allows simultaneous acquisition of three shunt-current measurements.

By integrating the peripheral and high-speed analog functions needed in motor-control designs, these MCUs enable OEMs to markedly reduce bill-of-materials cost while boosting motor-system performance. A single RA6T1 MCU can simultaneously control two Brushless DC (BLDC) motors.

Renesas also offers a new Renesas Solution Starter Kit (RSSK) for developers working on a motor control solution using the RA6T1 MCUs. The RSSK offers easy motor control debugging, and allows customers to immediately begin evaluating their motor control design, executing real-time analysis and tuning to accelerate development.

The easy-to-use motor solution includes an RA6T1 CPU card and 48V-compatible inverter board, along with a GUI tool for motor workbench, and a sensorless vector control sample program with three-shunt method which corresponds with the Flexible Software Package (FSP). Using the RA Family FSP makes it easy for development engineers to port the sample code to the program.

Renesas has extended its RA Family of Arm® Cortex®-M core-based microcontrollers, introducing four new RA6T1 group MCUs, the first Renesas RA MCUs to meet the

unique needs of motor-control applications in market sectors such as home appliances, heating, ventilation and air conditioning, solar inverters, and AC drives.

[email protected]

The Motor Control Evaluation System for the RA Family, RA6T1 Group, is a low-voltage permanent magnet synchronous motor solution which allows designers to start evaluating motor control technology immediately. The system includes: 48V inverter board, RA6T1 CPU card, permanent magnet synchronous motor and cables

Orderable Part Number: RTK0EMA170S00020BJ



APPLICATIONS• Industrial and telecoms auxiliary

power supplies for loads up to 60W

• General-purpose battery chargers

• Industrial USB Type-C chargers with a USB Type-C plug-in card

FEATURES• Input-voltage range:

85V to 265V AC • Output voltage programmable

from 5V to 20V DC• 3A maximum output current • 60W maximum continuous output

power

60W AC-DC converter board offers ultra-efficient template for new

GaN-based power-system designs

The reference design board is also ideal for any general-purpose application which requires high efficiency, small size, or the flexibility to use a single design across multiple end products.

At just 58mm x 49mm x 32 mm, the TobogGaN board achieves high power density. At the heart of the board is the InnoSwitch™3-Pro from Power Integrations, a highly integrated flyback controller which reduces component count and saves board space. It incorporates a quasi-resonant flyback controller, the FluxLink™ isolated feedback system for high regulation accuracy and rapid transient response, a secondary-side synchronous controller, and Power Integrations’ own PowiGaN™ Gallium Nitride (GaN) switch technology.

92% peak efficiencyPower Integrations’ PowiGaN technology is widely used in the latest ultra-compact USB Type-C® chargers because of its high efficiency and low thermal dissipation. The Power Integrations GaN power switches in the TobogGaN reference design produce lower switching and conduction losses than silicon MOSFETs of an equivalent power rating.

Thanks to the high efficiency of the PowiGaN primary-side switches in the Innoswitch3-Pro, the TobogGaN board achieves efficiency of 92% at peak load. This means it can often be used in a power supply with no heat-sink, even when operating at the maximum ambient temperature rating of 60°C.

The TobogGaN board’s InnoSwitch3-Pro controller provides for digital configuration via its I2C interface. Designers can select important power-system parameters such as output voltage and current limit. Designs based on the TobogGaN board can be easily modified to meet the requirements of multiple applications with a single hardware platform. The board can be optimized for 30W operation by simply changing the flyback transformer and the input bulk capacitor.

The 60W TobogGaN reference design board from Future Electronics is a complete AC-DC converter for industrial and telecoms auxiliary power supplies.

[email protected]



Orderable Part Number: TobogGaN

APPLICATIONS• Industrial switch-mode and

resonant-mode power supplies• Electric vehicle battery chargers• AC and DC motor drives• DC-DC converters• Renewable-energy inverters• Power Factor Correction circuits• Robotics • Servo control

FEATURES• Space-saving package formats• Low package inductance• Easy to mount to PCB

High-voltage MOSFETs feature power-saving characteristics

Operating on the charge compensation principle and fabricated with proprietary process technology, the X2 Class MOSFETs offer a combination of low on-resistance and low gate charge. These characteristics result in improved performance in switching power circuits: the MOSFETs’ low on-resistance reduces conduction losses and the energy stored in the output capacitance, minimizing switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements.

In addition, these MOSFETs are avalanche-rated and offer good dV/dt performance. Featuring a fast soft-recovery body diode, the X2 Class products also help power-system designers to reduce the effects of EMI on the host system.

Featuring a positive temperature coefficient of on-resistance, the X2 Class MOSFETs can be operated in parallel to meet high current requirements. The devices are available in various standard package formats, including TO-252, TO-220, TO-263, SOT-227, TO-247, PLUS247, ISOPLUS247, and TO-264.

X2 Class power MOSFETs from IXYS, a Littelfuse technology, have breakdown voltage ratings of 600V, 650V or 700V. The MOSFETs are ideal for high-efficiency, high-speed switching power-conversion applications. Some 600V and 650V X2 Class products are

AEC-Q101 qualified for automotive applications.

[email protected]

APPLICATIONS• Power adapters and chargers• LED lighting• Auxiliary power systems• Audio equipment • Industrial power supplies

FEATURES• 13A maximum drain current• 3.8V maximum gate-source

threshold voltage• 1.14nF input capacitance• 2.72µJ stored energy in output

capacitance at 400V• 100% avalanche tested

800V power MOSFET ideal as primary switch in flyback converters

The N-channel NTD360N80S3Z MOSFET features low on-resistance of 300mΩ and very low gate charge of 25.3nC. This means that use of this robust and high-performance power switch results in lower switching losses and a lower case temperature, and without sacrificing EMI performance.

In addition, the provision in the NTD360N80S3Z of an internal Zener diode gives a marked increase in resistance to ESD events.

By using this 800V SUPERFET III MOSFET, power-system engineers can realize more efficient, compact, cooler and more robust designs for switching power-conversion applications.

ON Semiconductor has introduced the NTD360N80S3Z, an 800V SUPERFET® III MOSFET which is optimized for use as the primary switch in a flyback converter.

[email protected]

APPLICATIONS• Welding equipment • Power factor correction• Uninterruptible power supplies• Solar inverters

FEATURES• 40A maximum continuous current• 6V gate threshold voltage• Minimized tail current• Co-packaged protection diode• Tight parameter distribution• Low thermal resistance• Positive temperature coefficient

of saturation voltage

650V IGBT supports efficient operation at high switching speeds

The STGWA20HP65FB2 HB2 series IGBT stands out for the excellent collector-emitter saturation voltage behavior at low current values, which helps to reduce conduction losses, as well as for low switching energy. Saturation voltage is just 1.65V at 20A.

The STGWA20HP65FB2 also supports fast-switching operation. Even at the IGBT’s maximum junction temperature of 175°C, the turn-off delay time is just 98ns, and the current fall time from 20A is 80ns.

The fast and efficient switching performance of the STGWA20HP65FB2 is demonstrated in the STEVAL-CTM010V1, an ST development board which features two sensorless three-phase motor drives and a single-stage digital Power Factor Correction (PFC) boost topology. The entire system is controlled by an STM32F303RB microcontroller.

An ST FOC MC SDK firmware library provides the software for controlling the motor drives’ operation, implementing dual-motor sensorless Field-Oriented Commutation (FOC) and PFC in continuous-conduction mode.

The inverter stages use ST’s SLLIMM™ IPM series of intelligent power modules for compact, high-performance AC motor drives in a simple, rugged design. The PFC section is based on the STTH30AC06C ultra-fast, high-voltage rectifier and the STGWT20H65FB IGBT.

The STEVAL-CTM010V1 is ideal for evaluating motor systems for use in efficient air-conditioning units based on a digital PFC circuit, and in any single- or dual-motor application which includes PFC.

STMicroelectronics’ 650V STGWA20HP65FB2 is the newest part in the HB2 series of IGBTs, which offers superior performance in switching power-conversion applications due

to the advanced, proprietary trench-gate field-stop structure.

[email protected]

Parts supported: STM32F303RB, STGWA20HP65FB2, STTH30AC06C, SLLIMM STGIB10CH60TS-L and STGIPQ3H60T-HZ Orderable Part Number: STEVAL-CTM010V1



APPLICATIONS• Telecoms equipment• Computer peripherals• Consumer electronics• LED backlighting • Motor drives • Load switching• Satellite navigation equipment • Factory automation• Industrial equipment

FEATURES• 19.5A maximum drain current• 2V minimum gate-threshold

voltage• 11nC gate charge• 1.9°C/W maximum drain-to-case

thermal resistance• 100% Rg and UIS tested

New 200V MOSFET has lowon-resistance to help increase

power density and save energy

The SiSS94DN, a TrenchFET® Gen IV power MOSFET housed in Vishay’s PowerPAK® 1212-8S package, also offers an improved figure-of-merit: on-resistance times gate charge is just 854mΩ*nC, offering high efficiency in switching power converters.

The on-resistance of the SiSS94DN is 20% lower than that of the next best product on the market in a similar package size, and its figure-of-merit is 17% lower than that of the previous generation of Vishay 200V MOSFETs. These values result in reduced conduction and switching losses, enabling power-system engineers to realize new energy-saving product designs.

The MOSFET enables designers to save board space by replacing a much larger MOSFET which has the same conduction losses, or a similar sized MOSFET which has higher conduction losses.

The SiSS94DN is ideal for primary-side switching in isolated DC-DC conversion topologies, and for synchronous rectification in power supplies and power converters.

Vishay has introduced a new 200V N-channel MOSFET which offers on-resistance of just 61mΩ at 10V which is lower than any other 200V MOSFET that has the same

3.3mm x 3.3mm footprint.

[email protected]

Why cost concerns might kill off the lead-acid battery, even if green

regulations do not

Robust, cheap, and offering proven electrical and mechanical characteristics, rechargeable 12V lead-acid batteries are in use today as a backup power source in tens of thousands of industrial and commercial systems, as shown in Figure 1.

The 12V lead-acid battery is also, of course, used to start the engine and backup the electrical system when the engine is turned off in cars and motorbikes. Indeed, the massive economies of scale created by the automotive industry explain both the low unit cost of lead-acid batteries, and their ready availability from commercial suppliers. The components of a lead-acid battery are simple and easily assembled.

Given all of these factors in favour of the lead-acid battery, it might seem surprising that designers of industrial and commercial applications are seriously evaluating an alternative rechargeable battery technology. But in fact they have good reason: the prospect of the introduction of new European environmental regulations banning the use of batteries that contain lead is real in markets such as emergency lighting, which today use lead-acid batteries as a backup power supply. This coincides with a dramatic fall over the past two years in the cost of battery packs based on the chemistry most likely to replace the lead-acid battery: lithium iron phosphate (LiFePO4), also known as lithium ferrophosphate (LFP).

In fact, it could be that design considerations will do more to accelerate the adoption of LFP battery packs than the prospect of new regulations: this article draws on experience of real-world installations to show how LFP battery packs offer performance, lifetime and cost advantages in industrial and commercial systems when used in place of lead-acid batteries.

A new regulatory environmentLead is an extremely harmful element when released to the environment: lead contamination is associated with severely damaging effects on human health, and in particular to the central nervous system. The danger posed by lead in the environment induced governments around the world to ban the use of lead additives in gasoline fuel in the 1990s.

The lead in lead-acid batteries has not yet become the target of legal prohibition: unlike the lead additive in petrol, the lead in a lead-acid battery is not meant to be released into the environment as a consequence of its use. Nevertheless, some lead-acid batteries are bound to escape the proper channels for recycling at the end of their lives. Even for those which are recycled, the extraction of the lead component will often be incomplete. It is inevitable that some of the lead in discarded lead-acid batteries will find its way into the environment, and there is no level of lead contamination that is known to be safe.

For this reason, it is assumed in industry that lead-acid batteries will inevitably and progressively be eliminated by law from various applications.

This view is supported by the signs of progress made by standards-setting body, the IEC, in developing a technical standard for the use of LFP battery packs in emergency lighting, as shown in Figure 2. The expected ratification of this standard will give the European Union the green light to introduce a ban on lead-acid batteries for backup power in emergency lighting, since it will be able to mandate an officially validated replacement technology.

LFP gains most favored statusThe lithium iron phosphate chemistry has gained favor because of a combination of electrical and commercial attributes which make it suitable as a replacement for lead-acid batteries. These include:• Long operating lifetime. While

a lead-acid battery might be specified for a lifetime of between one and three years, an LFP battery can last as long as ten years. Allied to this, an LFP battery can tolerate more charge-discharge cycles: up to 3,000 cycles, compared to the typical cycle life of a lead-acid battery of 200 to 1,000 cycles. Unlike a lead-acid battery, an LFP battery pack requires no maintenance.

• An LFP battery pack copes better with deep discharging: it can be discharged to 20% of capacity without long-term damage. By contrast, most lead-acid batteries lose capacity or cycle life if they are discharged to a state of charge lower than 50%.

• The lithium iron phosphate chemistry offers higher energy density than that of the lead-acid type. For a given energy capacity, therefore, an LFP battery pack will be smaller and lighter than a lead-acid battery.

• An LFP battery contains no lead, which makes it preferable from an environmental point of view.

It is also important to note that the LiFePO4 chemistry is different from that used to make the lithium-ion batteries in consumer devices such as laptop computers and smartphones. Unlike these consumer batteries LiFePO4 has markedly less risk of thermal run-away. With the application of mandatory protection circuitry to prevent conditions such as over-temperature, over-current or over-voltage, the LiFePO4 chemistry is safe for use in industrial or commercial equipment.

An LFP battery pack, which supplies a nominal 3.2V output when fully charged, is best suited to a Constant Current/Constant Voltage (CC/CV) cycling regime which maintains a 100% state of charge, a charging method which is compatible with use as a backup power supply. LiFePO4 cells are typically supplied in a standard 26650 or 18650 cylinder format: a battery pack consists of multiple cells alongside protection circuitry and a battery management system on a PCB assembled inside an enclosure. Commercial off-the-shelf LiFePO4 battery packs matching the form factor of 12V lead-acid battery products are available.

Competitive total cost of ownershipThe prospect of future regulation requiring the elimination of lead-acid batteries from systems such as emergency lighting drives many OEMs to first consider an LFP replacement. But when they compare whole-of-life costs, the commercial advantages of LFP often assume greater importance.

These commercial advantages have emerged over the past two years as the unit price per Watt-hour (Wh) of LFP battery packs has fallen steeply. This is the result of increasing adoption of LFP technology, which has induced LFP cell manufacturers to ramp up automated production lines. Automation has led to a large fall in production costs, while enabling manufacturers to maintain a consistently high level of quality.

The lower initial purchase cost/Wh of an LFP battery pack changes users’ calculation of lifetime costs. In a typical application such as emergency lighting, the service life of the system is often specified as ten years. Over this period, the user could expect to replace a lead-acid battery-based backup power supply once or twice. But an LFP battery pack, used in place of the lead-acid battery, can be expected to last for the entire ten years of service life without replacement. Unlike the lead-acid battery, the LFP battery also needs no routine inspection and maintenance.

A recent feasibility study carried out by Future Electronics used detailed operating data provided by a customer, a manufacturer of centralised emergency lighting systems. Future Electronics’ calculations revealed that the cost-per-charging-cycle of a backup power supply based on a lead-acid battery would be between €0.50 and €0.88, including the cost of maintenance and replacement. The cost for the same system with the same energy capacity provided by an LFP battery pack was €0.27 per cycle.

LFP battery implementation issuesWhile LFP battery packs are available today in a choice of standard formats for drop-in replacement of a 12V lead-acid battery, it is important to note that an LFP’s chemistry means that its use requires some considerations to be taken into account.

Most important, the battery pack needs to be properly protected by fail-safe circuitry ensuring that it is not vulnerable to electrical or thermal abuse. Like any lithium battery type, an LFP battery also requires a correctly regulated CC/CV charging profile and cell balancing. For most OEMs, the surest way to implement a new LFP battery-based power supply is to specify a complete, assembled battery pack, including protection circuitry and a battery management system, from a specialist LFP battery manufacturer such as Grepow or BST Power.

OEMs also need to consider the supply chain through which they will procure the LFP battery. While 12V lead-acid batteries are available from a wide range of non-specialist distributors and even from retail outlets, LFP batteries are produced in much smaller numbers, and supply is limited. A knowledgeable distributor such as Future Electronics, which has a direct franchise relationship with LFP battery pack manufacturers, can provide sound and reliable guidance on important supply-chain issues such as security of supply, lead time, second sourcing and quality.

Finally, lithium batteries are subject to special safety regulations governing transit and storage. Whether an LFP battery pack is shipped by air, land or sea, the owner has to comply with strict labeling, packaging and handling rules. Customers of a distributor such as Future Electronics need pay no attention to these regulations, since compliance is the responsibility of the distributor, not the buyer, until the packs are delivered to the OEM’s premises.

Distribution customers which benefit from a just-in-time supply arrangement such as Future Electronics’ Bonded Inventory Management scheme can even avoid the need for large-scale storage precautions on their own site, since they will only ever be stocking 1 to 3 days’ worth of inventory.

With the backing of a strong distributor assuring security of supply of high-quality assembled LFP battery packs, manufacturers of industrial and commercial systems can now confidently evaluate the LiFePO4 chemistry as a replacement for lead-acid, and discover the cost and performance benefits to be gained.

READ THIS TO FIND OUT ABOUT…

• The environmental and economic pressures which are stifling demand for lead-acid batteries

• The performance and operating characteristics of the LFP battery chemistry, the favored technology for replacement of lead-acid batteries

• Considerations to take into account when specifying an LFP battery for commercial or industrial applications

By Svend Culverhouse EMEA Commercial Solutions Manager, Future Electronics

Fig. 1: A typical centralised power backup system. These are Borri 100kW IP54 UPS units installed in a UK water treatment works. (Image credit: Borri, from www.borri.it)

Fig. 2: Emergency lighting (right) in a hallway in an office block in Aichi, Japan, with normal lighting shown on the left. (Image credit: Darklanlan under Creative Commons license)

APPLICATIONS• Switch-mode power supplies• Motor drives• Solar inverters• Industrial air conditioners• Welding equipment• Uninterruptible power supplies

FEATURES• Compact design• Maximum equivalent series

resistance at 100Hz: 120mΩ to 2,800mΩ

• Maximum impedance at 10kHz: 80mΩ to 2,060mΩ

• 19nH equivalent series inductance

Snap-in aluminum electrolytic capacitors offer higher power

density and longer life

The Vishay 193 PUR-SI capacitors offer as much as 30% higher ripple current, up to 3.27A, than standard solutions in similar case sizes, while providing a longer useful life. This enables power-system designers to use fewer components, saving board space and lowering cost.

The 193 PUR-SI capacitors have long useful life of 5,000 hours at 105°C which allows for use in demanding applications. The capacitors provide more than 25 years’ continuous operation in ambient temperatures up to 60°C.

The 193 PUR-SI devices are housed in a cylindrical aluminum case which is insulated with a blue sleeve, and which has three-pin keyed-polarity snap-in terminals. The case sizes range from 22mm x 25mm to 35mm x 60mm.

Featuring a rated voltage of 400V, 450V or 500V, the 193 PUR-SI parts are available with capacitance ranging from 47µF to 820µF.

Vishay Intertechnology has introduced a new series of snap-in aluminum electrolytic capacitors which can be used to realize circuit designs which achieve high power density.

Polarized, and containing a non-solid electrolyte, the new 193 PUR-SI capacitors are ideally suited for smoothing, buffering, and DC link filtering functions in power circuits.

[email protected]

APPLICATIONS• Distributed power systems• Communications and networking

infrastructure• Industrial power supplies• Solar energy equipment

FEATURES• Up to 95% conversion efficiency• Adjustable output-voltage range:

0.6V to 32V• ±1% feedback accuracy• Adjustable switching-frequency

range: 270kHz to 800kHz • Built-in 5V regulator • Internal bootstrap diode• Programmable current limit• Supports safe start-up into a pre-

biased output

Buck regulator supports wide input-output voltage drop

The MIC28516 benefits from the Microchip Hyper Speed Control® architecture, which allows for an ultra-fast transient response while reducing output capacitance. This also means that the MIC28516 can produce a low output from a high input voltage.

The adaptive on-time control architecture combines the advantages of fixed-frequency operation and fast transient response in a single device. The regulator can also implement Continuous Conduction Mode (CCM) operation for reduced noise at a low output current.

The MIC28516 offers a full suite of features to protect the regulator during fault conditions. These features include under-voltage lock-out to ensure proper operation under power-sag conditions, an externally programmable soft start to reduce inrush current, hiccup-mode short-circuit protection, and thermal shut-down.

Microchip also supplies the MIC28517 voltage regulator, which includes a Mode Select pin for use when supplying light loads. The MIC28517 does not offer the external programmable soft-start feature, and does not support CCM for low-noise operation.

Microchip’s MIC28516 is a synchronous buck regulator which features a unique adaptive on-time control architecture. The regulator operates over an input supply-voltage range

of 4.5V to 70V, and provides a regulated output current of up to 8A. The output voltage is adjustable to as low as 0.6V, and to an accuracy of ±1%.

[email protected]



The MIC28516 Evaluation Board accepts an input voltage up to 70V, regulating down to a selectable output of 0.8V, 1.2V, 2.5V, 3.3V, 5.0V or 12V, at continuous output current of up to 8A.The MIC28517 Step-Down Evaluation Board operates over an input supply range of 4.5V to 70V while providing an output of 8A.Orderable Part Numbers: ADM00929 (MIC28516) and ADM00995 (MIC28517)

APPLICATIONS• Asset tracking • Logistics • Outdoor infrastructure• Factory automation • Environmental monitoring sensors

FEATURES• 3.0V nominal voltage• High energy density• Excellent temperature

characteristics• Low self-discharge • UL recognized • Operating-temperature range:

-30°C to 70°C

Lithium coin cells provide extra long lifetime in high pulsed-current

applications

The High Drain lithium manganese dioxide coin cells are particularly well suited to use in devices which communicate using a Low Power Wide Area (LPWA) networking technology such as the LoRaWAN™ or Sigfox protocols.

In contrast to standard lithium coin cells, the High Drain products maintain a high current output even when the cell reaches the end of its discharge phase. The maximum pulse discharge current is double that of standard coin cells, at 50mA.

The High Drain cell also offers some three times better lifetime than standard cells. The High Drain type can maintain a high voltage output even at the end of the discharge phase, enabling the application to draw more of the stored energy from the cell. By contrast, when a standard cell’s output voltage drops below the level required by the application after supplying a high current output, it is treated as though fully discharged and in need of replacement.

Useful information and guidance about the use of Murata Micro Batteries in portable medical equipment, IoT devices, wearable devices and smart keys can be found in a series of application notes on Murata's website. https://www.murata.com/en-eu/products/batteries/micro?intcid5=com_xxx_xxx_cmn_bc_xxx#micro03

Murata supplies a range of ‘High Drain’ lithium coin cell batteries which can supply more pulses of a high output current than standard lithium coin cells, to give longer battery run-

time in RF communications applications such as wireless sensors and asset trackers.

[email protected]

Part Number Nominal Capacity Diameter Height Weight Cell Form Factor

CR2032R 200mAh 20mm 3.2mm 3.0g CR2032

CR2032R-HE1 200mAh 20mm 3.2mm 3.4g CR2032

CR2032R-HO6 200mAh 20mm 3.2mm 3.3g CR2032

CR2450R 500mAh 24.5mm 5mm 6.0g CR2450

CR2450R-HE6 500mAh 24.5mm 5mm 6.4g CR2450

CR2450R-HO5 500mAh 24.5mm 5mm 6.3g CR2450

Automotive H-bridge buck-boost power controller offers best-in-class

transient responseThe Maxim Integrated MAX25431 is a current-mode buck-boost power controller IC

for automotive applications which maintains a stable output voltage in the presence of transient voltages from the battery power supply.

DO YOU WANT AN FTM DEVELOPMENT BOARD FOR THIS PRODUCT?

The MAX25431 evaluation kit is a fully assembled and tested application circuit for the MAX25431 buck-boost controller IC. The quality of the output voltage can be monitored by observing the PGOOD signal.

Orderable Part Number: MAX25431EVKIT

Available at: www.FutureElectronics.com

In normal conditions, the MAX25431 operates from an input voltage ranging between 6V and 36V, producing an output which is fixed at 5V, or adjustable in a range from 4V to 25V. The controller is also able to withstand input transients of up to 40V.

The switching frequency is programmable via a resistor between 220kHz and 2.2MHz, and can be synchronized to an external clock. Support for high-frequency operation enables the use of small external passive components.

In light-load conditions, a logic input allows the MAX25431 to operate in fixed-frequency, forced PWM mode to eliminate frequency variation: this helps to minimize the need for EMI counter-measures and facilitates compliance with the requirements of the CISPR25 Class 5 standard.

Protection features integrated into the power controller include:● Cycle-by-cycle current limit followed by hiccup mode during sustained overloads● Input under-voltage lock-out ● Output over-voltage protection ● Thermal shut-down with automatic recovery

The MAX25431 is supplied in a 4mm x 4mm, 24-pin TQFN package.

APPLICATIONS• Dedicated charging modules• Rear-seat entertainment modules• USB hubs, breakout boxes and

multimedia hubs

FEATURES

• 10µA maximum quiescent current in shut-down mode

• AEC-Q100 qualified• Operating-temperature range:

-40°C to 125°C

[email protected]

APPLICATIONS• Solar inverters• Electric vehicle charging stations• Energy storage systems • Industrial motor control• Uninterruptible power supplies

FEATURES• Large contact gap for galvanic

separation• Low coil power dissipation• High protection against surge

voltages• 85°C maximum ambient

temperature • UL recognized• DE approval on request

High-voltage switching brought on board by new series of robust,

efficient relays

The compact HE series relays have a high load capability of up to 120A in the case of the HE-Y7 and the the HE-V can handle switching voltages up to 1,000V. Panasonic’s use of appropriate materials and well thought-out design decisions have resulted in a product which is capable of switching large amounts of energy at high voltage safely, with minimal risk of arcing.

Use of the HE series relays contributes to energy as well as space savings: extremely low power dissipation at the contacts is achieved by reducing the contact resistance to between 1mΩ and 3mΩ. This means that thermal losses are kept to a minimum: at a current of 35A and a contact resistance of 2mΩ, power dissipation is only 2.45W.

The HE series’ implementation of PWM switching also limits operating power consumption, which is as low as 170mW in the HE-S model. In most cases, so little waste heat is generated that ventilation is unnecessary.

The HE series of relays supplied by Panasonic Industry Europe gives designers a new option for switching relatively large amounts of power through a device mounted on

the main system’s PCB. This means that designers can in many cases avoid using a conventional discrete high-power switching board, and thus save space, reduce cost and

improve power efficiency.

[email protected]

Series HE-V HE-S HE-Y5 HE-Y6 HE-N (Y7)

Switching Current 20A DC 35A AC 48A AC 90A AC 120A AC

Dimensions (mm) 41 x 50 x 39 30 x 36 x 40 38 x 33 x 36.3 38 x 33 x 38.8 50 x 40 x 43

Holding Power 210mW 170mW 310mW 310mW 400mW

Contact Gap 3.8mm 3.2mm 2.5mm 3.0mm 3.6mm

Contact Arrangement 2FormA2FormA2FormA 1FormB

1FormA 1FormA 1FormA

Maximum Switching Voltage 1,000V DC 480V AC 277V AC 277V AC 800V AC

APPLICATIONS• Three-phase motor drives• Inverters

FEATURES• High voltage rail up to 600V• ±50V/ns dV/dt transient immunity• Gate-drive voltage range:

9V to 20V• 85ns overall input-output

propagation delay• Comparator for fast over-current

and over-temperature protection• Smart shut-down function• Under-voltage lock-out function

on low- and high-sides

Integrated motor driver chip ideal for three-phase applications

Featuring zero-drop integrated bootstrap diodes as well as a full set of protection functions, the STDRIVE601 simplifies the design of motor-drive circuits, and helps developers to reduce the size of the PCB and cut bill-of-materials cost.

The STDRIVE601, a high-voltage device manufactured with ST’s BCD6s offline technology, can sink 350mA and source 200mA at all outputs. Interlocking and dead-time functions prevent cross-conduction.

The device has dedicated Input pins for each output, and a Shut-down pin. The logic inputs are CMOS/TTL-compatible at levels down to 3.3V, to provide for easy interfacing with control devices.

Matched delays between the low- and high-side sections guarantee freedom from distortion and allow for high-frequency operation.

The STDRIVE601 from STMicroelectronics is a single chip containing three half-bridge gate drivers for N-channel power MOSFETs or IGBTs. The chip is intended for use in

three-phase motors or inverters.

[email protected]



The EVALSTDRIVE601 demonstration board is a complete three-phase inverter. The power stage features STGD6M65DF2 IGBTs. The board supports a three- or single-shunt current-sensing topology.

Orderable Part Number: EVALSTDRIVE601

APPLICATIONS• Battery-powered equipment• Cordless power tools• Home automation• Metering• Remote controls• White goods

FEATURES• 1µA quiescent current• 100nA shut-down current• 215mV drop-out voltage at

100mA output• ±1% output-voltage accuracy • Soft-start circuit• Stable with 1µF ceramic

capacitors

100mA LDO with low quiescent current is ideal for battery-powered applications

The NCP711, a CMOS LDO, is rated for a constant output current of up to 100mA from an input voltage ranging between 2.7V and 18V. The NCP711 is available in versions with a fixed output voltage of 3.0V, 3.3V or 5.0V, or with an adjustable output voltage of between 1.2V and 17V.

The NCP711 is ideal for use in regulating the input from a lithium-ion battery pack containing up to nine cells in series, to supply a load such as a microcontroller or analog circuit.

The NCP711A LDOs are supplied in a five-lead SOT-23 package. The NCP711B LDOs in a six-lead DFN package include a Power Good circuit which indicates that the output voltage is in regulation. This signal may be used for power sequencing, or for resetting a microcontroller.

All NCP711 regulators include internal short-circuit and over-temperature protection functions.

ON Semiconductor’s NCP711 is a series of Low Dropout (LDO) regulators which are suitable for use in battery-powered, always-on applications because of their very low

quiescent current and ability to handle a wide range of input voltages.

[email protected]

APPLICATIONS• 12V automotive power systems• Infotainment• Instrument clusters• Body electronics • Automotive lighting• Telematics• Advanced Driver Assistance

Systems (ADAS)

FEATURES• AEC-Q100 Grade 1 qualified• PPAP capable• Manufactured in IATF

16949-certified facilities• Protection functions: – Output under-voltage

protection – Cycle-by-cycle peak-current

limit – Thermal shut-down• 40V input-voltage surge-

withstand capability for 400ms• 0.6µA shut-down current

Automotive-grade switching buck converters offer excellent noise

reduction capability

The 3.5A AP63356Q and AP63357Q converters, which implement peak current-mode control, integrate high- and low-side power MOSFETs on-chip, enabling designers to reduce bill-of-materials costs and board size.

The converters operate over an input-voltage range of 3.8V to 32V, and provide an output ranging between 0.8V and the input voltage. Both devices provide a Power Good indicator with an internal 5MΩ pull-up resistor, a feature useful for power sequencing. To aid sequencing, the converters’ Enable pin has accurate voltage thresholds, which allows adjustment of the input-voltage device power-on, and of under-voltage lock-out values. In addition, the high-voltage capability of the Enable pin permits direct connection to the VIN pin to simplify auto-start operation.

The AP63356Q and AP63357Q feature a proprietary gate-driver scheme which ensures that switching transitions are clean while preventing switch-node ringing, to minimize high-frequency radiated noise. A frequency spread-spectrum scheme also helps to reduce noise by dispersing switching-noise energy.

The AP63356Q operates continuously in PWM mode at the nominal 450kHz switching frequency for all loads. The AP63357Q changes to pulse-frequency modulation mode at light loads, keeping efficiency as high as 86% at a 5mA load, and drawing a quiescent current of just 22µA under no load.

Both devices feature low-dropout operation, which maintains their output-voltage regulation as the input falls to a level near the output voltage.

Diodes has launched two highly integrated synchronous buck converters which simplify circuit design in automotive power systems.

[email protected]

APPLICATIONS• Travel adaptors• Power adaptors for tablets and

laptop computers• Power banks• USB Type-C hubs• Automotive systems• DC-DC in-car chargers

FEATURES• Complies with USB PD 3.0 v1.2• Complies with USB Type-C v1.4• Built-in current-sense resistor• Cable-drop compensation• Selectable resistor-divider or

battery-charging modes

USB PD power IC integrates multiple sensing, monitoring and control

functions

The FUSB3307 implements the Source finite state machines specified in the USB PD 3.0 and USB Type-C® standards, including for Programmable Power Supplies (PPS). To meet the PPS specification, the controller supports output-voltage control at a minimum of 3.3V and a maximum of 21V.

The FUSB3307 includes constant-voltage and constant current-limit control blocks. Internal DACs provide the required reference voltages.

Protection functions integrated in the controller include: • Under-voltage protection • Over-voltage protection• Over-current protection • CC1 and CC2 over-voltage protection up to 26V• Internal and external over-temperature protection

Using a 10-bit ADC, a circuit based on the FUSB3307 can monitor output voltage, output current, and internal and external temperature via an NTC resistor.

The chip can drive a single or back-to-back N-channel MOSFETs as a load switch, giving a low-cost circuit design which is easy to implement.

ON Semiconductor’s FUSB3307 is a highly integrated USB Power Delivery (PD) power source controller which can control a DC-DC port power regulator, or the optocoupler in

the secondary side of an AC-DC adapter.

[email protected]

Orderable Part Number: FUSB3307MX-PPS-GEVB



APPLICATIONS• Switch-mode power supplies• Electric vehicle chargers • DC-DC converters

FEATURES• 45mΩ on-resistance• 73nC total gate charge at

400V/20A• 85nC reverse-recovery charge at

a forward current of 20A/400V• 35A maximum drain current at a

case temperature of 100°C• Recommended gate-source

voltage range: -5V to 18V• 5V maximum gate threshold

voltage• 100µJ turn-on switching energy

at 400V/20A• 35µJ turn-off switching energy

Second-generation 650V SiC MOSFET offers low on-resistance and stable

high-temperature operation

The SCTW35N65G2V is notable for its low on-resistance per unit area and very good switching performance. Offering a maximum junction temperature of 200°C, this MOSFET enables designers to achieve very high power density in high-efficiency power systems. In addition, switching loss hardly varies over the MOSFET’s junction-temperature range.

Use of the ST SCTW35N65G2V SiC MOSFET in high-voltage systems enables designers to create a smaller and lighter power unit with lower cooling requirements. The SiC MOSFET cuts power losses in inverters, allowing the use of high switching frequencies and reducing the size of the inverter’s magnetic and other passive components. Additionally, a SiC-based solution offers fast and robust intrinsic body diodes, eliminating the need for the freewheeling diodes necessary with IGBTs, saving more cost, space, and weight.

The SCTW35N65G2V is supplied in a HiP247™ through-hole package measuring 20.0mm x 15.6mm.

The 650V SCTW35N65G2V Silicon Carbide (SiC) power MOSFET from STMicroelectronics offers the benefits of the company’s innovative second-generation SiC technology, providing very high efficiency and stable performance characteristics.

[email protected]

APPLICATIONS• Avionics• Military equipment • Medical equipment• Industrial control• Renewable energy systems• Switch-mode power supplies

FEATURES• Operating-frequency range:

100kHz to 500kHz• 3W power dissipation• Rated current up to 22.0A• Minimal parasitic variation• Operating-temperature range:

-55°C to 130°C• Power derating at above 105°C

Hybrid planar transformers offer cost and space savings over

traditional planar devices

The winding structure of these transformers allows for a greater copper fill factor than provided by traditional planar transformers. This means that the through-hole package is smaller overall, with a footprint of 30mm x 26mm and a low 16.5mm maximum profile, resulting in higher power density. The unique winding technology also allows the parts to be easily and quickly modified for custom voltage or power specifications with no up-front tooling charges to the design engineer.

Featuring a split primary design for efficient 120V or 380V operation, the MTPL-2516 transformers are optimized for offline and Power Factor Correction (PFC)-derived switch-mode power supplies, and for full-bridge or half-bridge converters.

Conforming to the requirements of the MIL-PRF-27 standard, the devices feature overmolded windings for rugged applications, and are environmentally sealed for operation in harsh environments.

Vishay Intertechnology supplies the MTPL-2516 series of hybrid planar transformers which are suitable for use in power supplies and power converters which require an output of 12V, 15V or 24V DC. The MTPL-2516 transformers offer cost advantages over traditional planar

transformers, and also feature a smaller package and better performance.

[email protected]

Orderable Part Number: TobogGaN



Affordable high efficiency: the emergence of GaN transistors in

AC-DC converters supplying <100W

In recent months, a flurry of new low-cost, compact USB Type-C® chargers has been released on to the market, taking advantage of the higher power capability, up to 100W, of the USB Power Delivery specifications supported by the USB Type-C protocol. These new products perform faster charging than earlier USB chargers, but are housed in a smaller enclosure, a valuable benefit for users of mobile computing devices in particular.

The power density of these new products is impressive: 60W USB Type-C chargers with a power density of 20W/in3 are available to consumers at a price of just €25 ($30). Previously at this price point, the power density of USB chargers was 10W/in3 at best.

The new technology underpinning the high power density of these new chargers is the Gallium Nitride (GaN) power transistor. In the new USB Type-C chargers, the traditional silicon MOSFET power switch is replaced by a GaN High Electron Mobility Transistor (HEMT) power switch. This is proof that GaN power switch technology has advanced so much, both in performance and cost, that it is replacing silicon MOSFETs more widely in power systems.

Indeed, the use of GaN HEMTs provides similar benefits in power supplies for industrial, telecoms, medical or military equipment as it does in USB Type-C chargers for the consumer market. The higher power efficiency achieved with the use of a GaN HEMT allows the power-system designer to shrink the AC-DC power stage: since less waste heat is generated, there is less need for heat-sinking or for a copper pad on the PCB for heat dissipation. This saves cost as well as space. In addition, the lower switching loss in GaN HEMT-enabled power systems gives the design engineer the option to raise the switching frequency, reducing the size, weight and cost of the magnetic components.

It should be no surprise, then, that this technology breakthrough is now sparking great interest generally among power engineers.

Operation of the HEMTTo appreciate the full potential for design optimisation with GaN, it helps first to understand the basic operation of a GaN HEMT.

A GaN HEMT is superior to a silicon power MOSFET because it has some remarkable physical properties. When Aluminum Gallium Nitride (AlGaN) is stacked onto GaN, a spontaneous charge layer is formed at the interface, due to differences in the polarisation of the two materials. Other physical properties confine this charge to the third dimension. Hence a two-dimensional charge sheet is created at the interface. Electrons can move freely in it without any doping of the semiconductor material, as shown in Figure 1.

The concentration of the electrons is determined by the mismatch in polarisation, and can be controlled by adjusting the concentration and thickness of the AlGaN barrier to produce high-performance lateral transistors which exhibit very high electron mobility, but which have very low on-resistance as a function of die area.

The layers of GaN and AlGaN are grown epitaxially onto a suitable substrate material. Silicon wafers are the most commonly used substrate. But some suppliers grow on sapphire, which is used extensively in the LED industry. Either manufacturing method supports low-cost manufacturing, building on established processes and readily available equipment.

Different approaches are taken by manufacturers to turn the transistors into normally-off devices. So called ‘enhancement mode’ devices establish a gate-controlled barrier in the structure of the AlGaN/GaN material. Other devices achieve control through the addition of a cascode series low-voltage MOSFET.

Until recently, manufacturers of GaN HEMTs have concentrated on supplying devices suitable for expensive, high-voltage systems, in which a higher unit cost for a GaN HEMT compared to a silicon MOSFET is more easily afforded in return for the power saving and size reduction provided by GaN technology. Now, as the emergence of compact USB Type-C chargers based on GaN shows, GaN technology has also become viable for lower-cost power systems supplying <100W.

Popular converter topologies in low-voltage power systemsFor AC-DC power supplies supplying loads <100W, the default power topology is the flyback converter. This topology is an isolated buck-boost which, in its simplest form, is comprised of two power switches either side of

an inductor. Figure 2 explains a modified version of this basic topology, the isolated flyback converter. Figure 2c shows that the simple inductor in Figure 2a is replaced by an isolated coupled inductor, the so-called flyback transformer. In this transformer, the windings on the secondary side are arranged to produce a positive output voltage. For an AC-DC converter operating from a mains AC input, an initial bridge rectifier stage and bulk capacitor produce the DC input voltage, Vg. This DC voltage will be around 300V when operating from a 220V AC input.

The turns ratio between the primary and secondary windings, N, of the flyback transformer can be configured to provide the steep voltage drop required for low output voltages of as little as 3.3V while maintaining a viable duty cycle and on-time for both the primary and secondary switches during a switching cycle.

When optimising the efficiency of a flyback converter, the designer needs to take account of the many elements which contribute to losses in the AC-DC power stage:• Primary-side FET switching and conductive losses• Secondary-side diode losses• Losses associated with leakage inductance in the flyback transformer and primary-side voltage snubber network• Copper losses in the flyback transformer, including losses associated with skin effect and winding proximity losses• Magnetic core losses• Resistive losses associated with the Equivalent Series Resistance (ESR) of the input and output capacitors

By adopting good magnetic design principles, but retaining the diode on the secondary side, it is possible to achieve efficiency of around 85% when supplying a full load. The designer can increase efficiency by a few percentage points by replacing the diode with a low-voltage secondary-side silicon MOSFET.

To reduce losses at the primary-side MOSFET, the quasi-resonant flyback is commonly used. The quasi-resonant flyback AC-DC converter operates in discontinuous conduction mode. Here, the current through the secondary side reaches zero and the diode, or MOSFET, is in its off-state before the primary side switches on; energy is stored in the flyback transformer as the primary inductor current ramps.

During the period of operation in which both the primary and secondary switches are off, relaxation oscillations occur in the drain voltage, Vd, of the primary MOSFET, due to the combination of the node capacitance and primary inductance. Timing for the turn-on of the primary-side switch can be aligned with the low-voltage troughs of these oscillations. As switching losses are proportional with the square of the drain voltage, switching in this quasi-resonant way results in much lower losses at the primary-side switch. The drain-voltage waveform for this operation is shown in Figure 3. The efficiency of a flyback converter, using quasi-resonant switching, a silicon primary MOSFET and a secondary-side synchronous MOSFET, is around 91% at rated load.

Although switching the primary-side MOSFET at the trough of the drain-voltage waveform reduces losses significantly, residual switching losses remain since the voltage across the MOSFET is still substantial.

Efficiency gains when GaN replaces silicon switchReplacing the silicon MOSFET in the quasi-resonant topology with a GaN HEMT reduces primary-side losses even more. Thanks to the very high electron mobility and very low on-resistance of a GaN HEMT, it can be made much smaller than a silicon MOSFET of the same voltage and current rating. This means that its output capacitance will be much lower, and it provides much faster switching edges. These faster switching edges result in much lower switching losses.

The scale of the efficiency improvement to be gained from the use of GaN HEMTs is demonstrated in the performance ratings of the integrated InnoSwitch™3 product line from Power Integrations. In 2019, Power Integrations incorporated its internally developed GaN technology, PowiGaN™, into its already successful InnoSwitch3 product line. The reduction in primary switch losses achieved by using PowiGaN technology is revealed in Figure 4. This performance improvement is achieved because turn-on and turn-off operations using PowiGaN are almost instantaneous. In addition, PowiGaN-enabled devices are much smaller in die size than a comparable silicon switch with a similar on-resistance rating.

The InnoSwitch3 is a complete quasi-resonant flyback stage: it is an ideal solution for low-cost but high-efficiency and compact flyback power stages, such as those in USB Type-C chargers. Flyback converters based on the InnoSwitch3 with PowiGaN technology offer efficiency of around 95% when operating at power levels up to 100W.

High efficiency is not the only reason to choose the InnoSwitch3 with PowiGaN technology. Implementation of a power supply design is simple using these products because of the number of integrated functions that are provided, including:-• High-voltage primary-side switch• Primary-side controller • Secondary-side controller for synchronous rectification• Innovative FluxLink™ isolation technology, which eliminates the need for an optocoupler

Using InnoSwitch3 with PowiGaN technology in a real-world applicationRecognising the advantages of using GaN technology in a quasi-resonant flyback converter topology, Future Electronics has developed the new TobogGaN board, providing a useful reference design for designers considering InnoSwitch3 products, enabled with PowiGaN technology, in industrial auxiliary power supplies.

The compact TobogGaN design is rated for use in industrial environments at ambient temperatures up to 60°C, and at power levels up to 60W.

The InnoSwitch3 product family chosen in the TobogGaN board is the InnoSwitch3-Pro, which includes digital programming capability via an I2C interface. The reference design provides a programmable output voltage between 5V and 20V, and output current up to 3A. Peak efficiency is 95%.

Users of the TobogGaN board may program it via a plug-in board providing an I2C-to-USB interface. Alternatively, the reference design supports USB Type-C operation using an additional plug-in controller board.The reference design can also be configured for 30W-rated power requirements by changing the flyback transformer and an alternative bulk capacitor, which are provided with the TobogGaN board for retrofitting.

The TobogGaN reference design board is available free-of-charge to qualifying customers of Future Electronics through the FTM Board Club at www.my-boardclub.com.

READ THIS TO FIND OUT ABOUT…

• How a GaN power switch’s operation is different from that of a silicon MOSFET

• The advantages of the quasi-resonant flyback topology in GaN HEMT-based power circuits

• The features of the TobogGaN 60W AC-DC converter reference design board based on the InnoSwitch3 from Power Integrations

By David WoodcockManager, Power Systems Centre of Excellence, Future Electronics

Fig. 1: Cross-section of the structure of a GaN HEMT.

Fig. 4: Comparison of the conduction losses and switching losses for a silicon MOSFET and for the PowiGaN switch used in the InnoSwitch3 power stage. (Image credit: Power Integrations)

Fig. 5: InnoSwitch3 flyback converter ICs include Power Integrations’ PowiGaN technology. (Image credit: Power Integrations)

Table 1: PowiGaN-enabled InnoSwitch3 products

Fig. 3: The drain-voltage waveform of the primary MOSFET during quasi-resonant flyback converter operation.

Fig. 2: Evolution of the step-down flyback from non-isolated buck-boost.

InnoSwitch3-CP PowiGaN Target Application

Maximum Drain-source Voltage Rating (V)

Power Rating (peak or open frame) 85V to 265V AC (W)

INN3278C-Hxxx Size 8Constant Power and

CV/CC 750

65

INN3279C-Hxxx Size 9 75

INN3270C-Hxxx Size 10 85

InnoSwitch3-EP PowiGaN Target Application Maximum Drain-source Voltage Rating (V)

Power Rating (peak or open frame) 85-265 VAC (W)

INN3678C-Hxxx Size 8Open frame and adaptor

CV/CC 750

65

INN3679C-H60x Size 9 75

INN3670C-H60x Size 10 85

InnoSwitch3-Pro PowiGaN Target Application Maximum Drain-source Voltage Rating (V)

Power Rating (peak or open frame) 85-265V AC (W)

INN3378C-H302 Size 8Digitally Programmable

CV/CC 750

65

INN3379C-H302 Size 9 75

INN3370C-H302 Size 10 85

APPLICATIONS• Drones• Small electric vehicles• Radio-controlled vehicles

FEATURES• Memory:

– 128kbyte SRAM provisionincludes 32kbyte routinebooster

– External memory interface forstatic memories

• 16-channel DMA controller• Three CAN-FD controllers• Four I2C interfaces• Four serial peripheral interfaces• Serial audio interface• USB 2.0 Full-Speed interface• IRTIM infrared interface• USB Power Delivery over USB

Type-C® controller

32-bit MCUs offer integrated feature set for digital power-system control

Key features for digital power control in the STM32G474 include a Filter-Math Accelerator (FMAC) to handle functions such as 3p/3z compensation, and to ensure high efficiency across the load range. The STM32G474 can also perform digital slope compensation, freeing CPU cycles for other functions. The MCUs provide a rich set of analog features, including five fast 12-bit ADCs, seven comparators, six operational amplifiers, seven DAC channels, an internal voltage reference buffer, a low-power real-time clock, and multiple high-resolution timers.

The STM32G474 devices are based on the Arm® Cortex®-M4 RISC core operating at a frequency of up to 170MHz. The Cortex-M4 core features a single-precision floating-point unit which supports all the Arm single-precision data-processing instructions and all the data types. It also implements a full set of DSP instructions, and a memory protection unit for enhanced security.

High-speed memory provision comes in the form of 128kbytes, 256kbytes or 512kbytes of Flash and 128kbytes of SRAM. The MCU also features a Quad SPI to external Flash memory. Several protection mechanisms are included for the embedded Flash memory and SRAM: • Read-out protection• Write protection• Securable memory area• Proprietary code read-out protection

The STM32G474 MCUs are available in ten package options which have up to 128 pins.

The STM32G474 microcontrollers from STMicroelectronics enable the implementation of high-performance power systems which use digital control to achieve high precision and

to provide design flexibility.

[email protected]


The STM32 Nucleo-64 MCU development board provides Arduino® and ST morpho connectivity options for system expansion. The board is supplied with an external switch-mode power supply for the core logic system. The board conforms to the Arm Mbed Enabled™ specifications. Orderable Part Number: NUCLEO-G474RE


APPLICATIONS• LED drivers

FEATURES• Integrated 700V start-up• Optional linear/quadratic dimming

curves• Optional minimum dimming

clamping to 0%, 1%, 5%, 8%• Multiple protection functions

Primary-side controller for LED drivers provides high power quality

The NCL30486 provides a very high-quality power output which eases compliance with the strict regulations applied to LED lighting circuits. In particular, the controller achieves a power factor greater than 0.95 and total harmonic distortion of less than 10%.

Excellent current regulation which is accurate to <±2% maintains constant brightness with imperceptible variation in flux. Voltage regulation is accurate to <±1%.

The NCL30486 is a single-stage, constant-current/constant-voltage PWM controller which can be applied in various power-conversion topologies, including flyback, buck-boost, Sepic and boost. It operates in a quasi-resonant mode to give high efficiency.

Due to a novel control technique applied by ON Semiconductor, the device is able to tightly regulate a constant LED current from the primary side. The analog dimming output current is supplied via two dedicated dimming control input pins, ADIM and PDIM.

ON Semiconductor’s NCL30486 is a primary-side PWM power controller for LED drivers which enables very deep analog dimming.

[email protected]

Orderable Part Number: NCL30486LED1GEVB



APPLICATIONS• Personal and healthcare products• Single- or two-cell powered IoT

devices• Wireless headsets• Remote controls• Portable instruments• Wireless sensors• Data loggers

FEATURES• 5μA quiescent current in PFM

mode • 2.3μA shut-down current• Up to 96% efficiency• 1A inductor peak current limit• Internal synchronous rectifier• Internal compensation• Thermal shut-down protection

Step-up DC-DC converters provide rich set of safety features for battery-powered applications

These step-up DC-DC converters provide an automatic input-output voltage-bypass operation which helps to optimize battery usage and achieve high efficiency when the nominal voltage of a fresh battery is in the same range as the output value of the converter.

The MCP1641x can be powered by either single- or two-cell alkaline or NiMH batteries, or by single-cell lithium-ion or lithium-polymer batteries. The converters operate over an input-voltage range of 0.8V to 5.25V, supplying an adjustable output voltage in a range between 1.8V and 5.25V.

The architecture of the converter, which is well suited to battery-powered applications, allows the regulator to start up without a high inrush current or output-voltage overshoot from a low input voltage.

The MCP1641x DC-DC converters also feature a special safety feature which is valuable to battery-powered devices: an over-temperature warning output, which helps to maintain safe operation in personal devices such as Bluetooth® headsets and toys. This feature provided in four members of the MCP1641x family provides a combined Power Good and Die Over-temperature output on the PGT pin. It flags a warning signal when the output-voltage level drops by 10%, or the die temperature exceeds a factory-programmable value, typically 75°C.

The built-in UVLOSTOP function, triggered at 0.8V, helps to prevent deep discharge of an alkaline battery, which can cause battery leakage. An open-drain Low Battery Output (LBO) pin will warn the user to replace the battery if the input voltage falls to the programmed UVLOSTART value.

The MCP1641x family of voltage regulators from Microchip performs efficient boost conversion of the input from alkaline, NiMH or small lithium batteries, helping to maximize

the run-time between battery replacement or recharging.

[email protected]

Part Number Enable Pin Shut-down Option Switching Mode Option PGT/PG Pin Option

MCP16411 Output discharge PFM/PWM Power Good and Die Over-temperature output

MCP16412 Output discharge PWM only Power Good and Die Over-temperature output

MCP16413 In-out bypass PFM/PWM Power Good and Die Over-temperature output

MCP16414 In-out bypass PWM only Power Good and Die Over-temperature output

MCP16415 Output discharge PFM/PWM Power Good output

MCP16416 Output discharge PWM only Power Good output

MCP16417 In-out bypass PFM/PWM Power Good output

MCP16418 In-out bypass PWM only Power Good output



The MCP1641x evaluation board demonstrates the operation of the MCP16411 step-up converter, supplying an output current of 200mA at voltage of 3.3V from a 1.5V input. Orderable Part Number: ADM00867

APPLICATIONS• Telecoms power supplies• Server power supplies• Electric vehicle chargers• Solar inverters• Uninterruptible power supplies

FEATURES• 75A maximum current rating• 2,495pF effective output

capacitance • 100% avalanche tested • 1.1Ω internal gate resistance

650V MOSFET offers low loss and superior switching performance

The SUPERFET III MOSFETs use charge balance technology to give very low on-resistance and to lower gate charge. The NTHL019N65S3H’s on-resistance is 15mΩ, and gate charge is 282nC. Combining these values, the MOSFET has an excellent figure-of-merit, resulting in low conduction losses and superior switching performance. It can also withstand extreme dV/dt rates. The NTHL019N65S3H is supplied in a TO-247 package.

ON Semiconductor’s NTHL019N65S3H N-channel power MOSFET is a member of the SUPERFET® III family of high-voltage superjunction transistors. Like other SUPERFET III MOSFET FAST series products, the 650V NTHL019N65S3H helps designers to realize

smaller and more efficient power-system designs.

[email protected]

APPLICATIONS• Factory automation equipment • Solar inverters• Motor drives• Induction heating

FEATURES• Low capacitance • Low gate charge• Short reverse-recovery time• Stable on-resistance over

temperature• 175°C maximum junction

temperature

New TO-263-7L package improves switching behavior of high-efficiency

SiC trench MOSFETs

The addition of the Kelvin connection means that the main source inductance is no longer shared by the gate-drive loop and the main current path. As a consequence, the device can be turned on faster, which leads to reduced turn-on losses. An additional benefit of the TO-263-7L package is that it has much lower stray inductance than the standard TO-247 package and its variants.

A comparison of the operation of SiC MOSFETs in ROHM’s TO-263-7L package with SiC MOSFETs in a standard three-lead TO-247 package is instructive: at turn-on, the three-lead device’s switching speed is limited because the inductive voltage drop across the Source terminal reduces the effective gate voltage, leading to a long period at the Miller plateau, which causes noticeable turn-on losses.

In the device in the TO-263-7L package with the Kelvin source connection to the gate driver, this period is much shorter, and so the turn-on loss is reduced. The turn-off transient also shows that a much higher dI/dt can be achieved due to the reduced parasitic inductance, and so the turn-off loss is also less than in the TO-247 package.

ROHM Semiconductor has extended its portfolio of discrete Silicon Carbide (SiC) MOSFETs, introducing devices in a TO-263-7L surface-mount package with a Kelvin

source connection to the gate driver, which allows for faster switching and higher switching efficiency.

[email protected]

Part Number Drain-source Voltage (V) Drain-source On-resistance (mΩ) Drain Current (A) Package

SCT3120AW7 650 120 21 TO-263-7L

SCT3080AW7 650 80 29 TO-263-7L

SCT3060AW7 650 60 38 TO-263-7L

SCT3030AW7 650 30 70 TO-263-7L

SCT3160KW7 1,200 160 17 TO-263-7L

SCT3105KW7 1,200 105 23 TO-263-7L

SCT3080KW7 1,200 80 30 TO-263-7L

SCT3040KW7 1,200 40 56 TO-263-7L

APPLICATIONS• Charging• Heating, ventilation and

air-conditioning equipment • Industrial controls• Power supplies• Lighting

FEATURES• 75A/277V AC overload capability• 4kV coil-to-contact dielectric

strength • UL 508 recognized• Rated for 6,000 switching cycles

50A relay suited to high-power and high-temperature applications

The improved conductivity and heat-dissipation capability of the T92 relay results in improved ratings: the T92H type is rated for a maximum current of 50A, and a 277V AC voltage. The T92 parts are available with 30A and 40A ratings.

The high-quality construction of the T92 series relays means that they may be used in applications, such as charging, which are exposed to high power and high temperatures. The T92 relays are available in 2 Form A and 2 Form C contact configurations. The T92H is only available as 2 Form A.

TE Connectivity, TE and TE connectivity (logo) are trademarks.

TE Connectivity (TE) Potter & Brumfield T92 series two-pole, 50A relay benefits from improved materials and design to achieve high power and temperature ratings for use in

demanding industrial, power and lighting applications.

[email protected]

future technology magazinefuture technology magazine 21-i emea in association with my-boardclub.com:...

Documents